JP2015105304A - エポキシ樹脂組成物、半導体封止剤および半導体装置 - Google Patents
エポキシ樹脂組成物、半導体封止剤および半導体装置 Download PDFInfo
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- JP2015105304A JP2015105304A JP2013247267A JP2013247267A JP2015105304A JP 2015105304 A JP2015105304 A JP 2015105304A JP 2013247267 A JP2013247267 A JP 2013247267A JP 2013247267 A JP2013247267 A JP 2013247267A JP 2015105304 A JP2015105304 A JP 2015105304A
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- epoxy resin
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Abstract
【解決手段】エポキシ樹脂組成物は、(A)エポキシ樹脂と、(B)硬化剤と、(C)0.1〜10質量%の、平均粒径10〜100nmのシリカフィラーと、(D)40〜75質量%の、平均粒径0.3μm〜5μmのシリカフィラーとを有し、前記(C)成分および前記(D)成分を、合計で40.1〜77質量%含むことを特徴とする。
【選択図】なし
Description
図1は、半導体素子の実装において発生したブリードを説明する図である。ここでは、基板1の上に半導体素子2をアンダーフィル剤により接合した例を示している。図1(A)はチップ上面から見た図を、図1(B)は図1(A)のA−A断面を、それぞれ示している。半導体素子2の周辺にはアンダーフィル剤が盛られている部分(以下「フィレット」という)があるが、その外側に発生しているのがブリードである。ブリードは外観上、変色して見えるだけでなく、装置の特性や信頼性に影響を与える場合がある。
本発明のエポキシ樹脂組成物は、(A)エポキシ樹脂と、(B)硬化剤と、(C)平均粒径10〜100nmのシリカフィラーと、(D)平均粒径0.3μm〜5μmのシリカフィラーとを含む。
3−1.エポキシ樹脂組成物の調整
表1〜4は、実施例1〜25および比較例1〜6のエポキシ樹脂組成物の組成、および後述する評価の結果を示す。表1〜4において、エポキシ樹脂組成物の組成は質量部で表されている。
実施例1〜25および比較例1〜6に対して、以下の評価を行った。
試料としてソルダーレジスト(PSR4000 AUS703)付きの有機基板(FR−4基板)を用いた。まず試料を150℃で1時間、乾燥させた。次にこの試料をプラズマ処理した。プラズマ処理の条件は以下のとおりである。
ガス種:Ar
ガス流量:21sccm
供給電力:400W
処理時間:300sec
ブルックフィールド回転粘度計を用いて、50rpmで、25℃における粘度を測定した。
5rpmおよび50rpmで粘度を測定し、5rpmにおける粘度を50rpmにおける粘度で除した値をTI値とした。
110℃において、20μmのギャップ(間隙)にエポキシ樹脂組成物を注入し、注入されたエポキシ樹脂組成物が入口から20mmの位置に到達するまでの時間を測定した。到達までの時間が短いほど注入性が良いことを示している。なお、注入性の欄に「×」と記載されているのは、エポキシ樹脂組成物が20mmの位置まで到達しなかったこと(すなわち不良であること)を意味する。
FR−4上に封止剤(評価用試料)を約0.5mgポッティングし、この上に2mm□シリコンチップを載せ、室温で5min、放置した後、送風乾燥機を用いて150℃で120min、硬化させた。このようにして得られた試験片について、接着強度を卓上型強度測定機(アイコーエンジニアリング(株)製1605HTP)を用いて測定した。なお、n=10で測定し、平均値を検査値とした。
Claims (10)
- (A)エポキシ樹脂と、
(B)硬化剤と、
(C)0.1〜10質量%の、平均粒径10〜100nmのシリカフィラーと、
(D)40〜75質量%の、平均粒径0.3μm〜5μmのシリカフィラーと
を有し、
前記(C)成分および前記(D)成分を、合計で40.1〜77質量%含む
ことを特徴とするエポキシ樹脂組成物。 - 前記(C)成分および前記(D)成分の少なくとも一方が、シランカップリング剤で表面処理されている
ことを特徴とする請求項1に記載のエポキシ樹脂組成物。 - 前記(A)成分と前記(B)成分との当量比が、0.5〜1.8である
ことを特徴とする請求項1ないし3のいずれか一項に記載のエポキシ樹脂組成物。 - 前記(B)成分が、アミン硬化剤である
ことを特徴とする請求項1ないし4のいずれか一項に記載のエポキシ樹脂組成物。 - 前記(A)成分が、ビスフェノールF型エポキシ樹脂、ビスフェノールA型エポキシ樹脂、ナフタレン型エポキシ樹脂、アミノフェノール型エポキシ樹脂のうち少なくとも1つを含む
ことを特徴とする請求項1ないし5のいずれか一項に記載のエポキシ樹脂組成物。 - 硬化物のブリード試験において、発生するブリードが300μm以上1900μm未満である
ことを特徴とする請求項1ないし6のいずれか一項に記載のエポキシ樹脂組成物。 - 前記(A)成分の少なくとも一部に前記(C)成分を混合してマスターバッチを生成し、当該マスターバッチに他の成分を混合して製造される
ことを特徴とする請求項1ないし7のいずれか一項に記載のエポキシ樹脂組成物。 - 請求項1ないし8のいずれか一項に記載のエポキシ樹脂組成物を用いた半導体封止剤。
- 請求項9の半導体封止剤を用いた半導体装置。
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US20170005021A1 (en) | 2017-01-05 |
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WO2015079707A1 (ja) | 2015-06-04 |
KR102197914B1 (ko) | 2021-01-04 |
CN105637031A (zh) | 2016-06-01 |
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US9947604B2 (en) | 2018-04-17 |
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