JP2015099915A - 光電変換素子、及び、光電変換素子の製造方法 - Google Patents
光電変換素子、及び、光電変換素子の製造方法 Download PDFInfo
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- JP2015099915A JP2015099915A JP2014203923A JP2014203923A JP2015099915A JP 2015099915 A JP2015099915 A JP 2015099915A JP 2014203923 A JP2014203923 A JP 2014203923A JP 2014203923 A JP2014203923 A JP 2014203923A JP 2015099915 A JP2015099915 A JP 2015099915A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 130
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 39
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 13
- 239000001301 oxygen Substances 0.000 claims abstract description 13
- 230000007547 defect Effects 0.000 claims abstract description 11
- 239000012535 impurity Substances 0.000 claims abstract description 10
- 238000002513 implantation Methods 0.000 claims abstract description 7
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052951 chalcopyrite Inorganic materials 0.000 claims description 13
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 230000002349 favourable effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 50
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 25
- 239000000758 substrate Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 9
- 230000004075 alteration Effects 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Abstract
Description
1 基板
2 電極
3 p型半導体層
4 n型半導体層
5 ノンドープ酸化ガリウム層
6 電極
Claims (4)
- 第1電極層と、
前記第1電極層に積層されるp型半導体層と、
前記p型半導体層に積層されるn型半導体層と、
前記n型半導体層に積層されるノンドープの酸化ガリウム層と、
前記ノンドープの酸化ガリウム層に積層される第2電極層と
を具え、
前記n型半導体層は、酸素欠陥又は不純物注入によってキャリア濃度が増大された酸化ガリウム層で構成される、光電変換素子。 - 前記n型半導体層を構成する不純物注入によってキャリア濃度が増大された酸化ガリウム層は、Sn、Ge、Si、Ti、Zr、Hf、V、Nb、Ta、Cr、Mo、又はWのうちの少なくとも一つの元素が不純物として注入されている、請求項1記載の光電変換素子。
- 前記p型半導体層は、カルコパイライト型半導体を主体とする半導体層で構成される、請求項1又は2に記載の光電変換素子。
- p型半導体層を成膜する工程と、
前記p型半導体層を成膜した後に、前記p型半導体層を大気に暴露せずに、前記p型半導体層に、酸素欠陥又は不純物注入によってキャリア濃度が増大された酸化ガリウム層で構成されるn型半導体層を成膜する工程と
を含む、光電変換素子の製造方法。
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018172880A1 (en) * | 2017-03-24 | 2018-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion element and manufacturing method thereof |
CN110993504A (zh) * | 2019-10-14 | 2020-04-10 | 西安电子科技大学 | 基于SiC衬底的Ga2O3薄膜的制备方法及基于SiC衬底的Ga2O3薄膜 |
CN112951948A (zh) * | 2021-01-18 | 2021-06-11 | 郑州大学 | 基于氧化镓能带调控的同质结光电探测器及其制备方法 |
JP7506872B2 (ja) | 2020-06-16 | 2024-06-27 | 株式会社ノベルクリスタルテクノロジー | アバランシェフォトダイオード |
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JP2000323733A (ja) * | 1999-03-05 | 2000-11-24 | Matsushita Electric Ind Co Ltd | 太陽電池 |
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JP2011086770A (ja) * | 2009-10-15 | 2011-04-28 | Idemitsu Kosan Co Ltd | 光電変換素子及びその製造方法 |
JP2011176090A (ja) * | 2010-02-24 | 2011-09-08 | Nippon Light Metal Co Ltd | 紫外線センサ、およびその製造方法 |
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JP2014209538A (ja) * | 2013-03-27 | 2014-11-06 | 日本放送協会 | 光電変換素子、及び、光電変換素子の製造方法 |
-
2014
- 2014-10-02 JP JP2014203923A patent/JP6463937B2/ja active Active
Patent Citations (10)
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JP2000323733A (ja) * | 1999-03-05 | 2000-11-24 | Matsushita Electric Ind Co Ltd | 太陽電池 |
JP2006332373A (ja) * | 2005-05-26 | 2006-12-07 | Matsushita Electric Ind Co Ltd | 酸化物薄膜太陽電池 |
JP2009274883A (ja) * | 2008-05-12 | 2009-11-26 | Nippon Light Metal Co Ltd | 半絶縁性酸化ガリウム単結晶の製造方法 |
JP2010233406A (ja) * | 2009-03-27 | 2010-10-14 | Koha Co Ltd | スイッチング制御装置及びショットキーダイオード |
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JP2011086770A (ja) * | 2009-10-15 | 2011-04-28 | Idemitsu Kosan Co Ltd | 光電変換素子及びその製造方法 |
JP2011176090A (ja) * | 2010-02-24 | 2011-09-08 | Nippon Light Metal Co Ltd | 紫外線センサ、およびその製造方法 |
WO2011108552A1 (ja) * | 2010-03-02 | 2011-09-09 | 住友金属鉱山株式会社 | 積層体およびその製造方法、並びにそれを用いた機能素子 |
JP2012204617A (ja) * | 2011-03-25 | 2012-10-22 | Idemitsu Kosan Co Ltd | 光起電力素子、及び当該光起電力素子の製造方法 |
JP2014209538A (ja) * | 2013-03-27 | 2014-11-06 | 日本放送協会 | 光電変換素子、及び、光電変換素子の製造方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018172880A1 (en) * | 2017-03-24 | 2018-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion element and manufacturing method thereof |
CN110993504A (zh) * | 2019-10-14 | 2020-04-10 | 西安电子科技大学 | 基于SiC衬底的Ga2O3薄膜的制备方法及基于SiC衬底的Ga2O3薄膜 |
JP7506872B2 (ja) | 2020-06-16 | 2024-06-27 | 株式会社ノベルクリスタルテクノロジー | アバランシェフォトダイオード |
CN112951948A (zh) * | 2021-01-18 | 2021-06-11 | 郑州大学 | 基于氧化镓能带调控的同质结光电探测器及其制备方法 |
CN112951948B (zh) * | 2021-01-18 | 2023-01-24 | 郑州大学 | 基于氧化镓能带调控的同质结光电探测器及其制备方法 |
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