JP2015090874A - Solid state image pickup device, manufacturing method of the same and electronic camera - Google Patents

Solid state image pickup device, manufacturing method of the same and electronic camera Download PDF

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JP2015090874A
JP2015090874A JP2013229012A JP2013229012A JP2015090874A JP 2015090874 A JP2015090874 A JP 2015090874A JP 2013229012 A JP2013229012 A JP 2013229012A JP 2013229012 A JP2013229012 A JP 2013229012A JP 2015090874 A JP2015090874 A JP 2015090874A
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semiconductor chip
adhesive
opening
wiring board
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JP6427864B2 (en
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貴行 亀川
Takayuki Kamekawa
貴行 亀川
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Nikon Corp
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Abstract

PROBLEM TO BE SOLVED: To reduce reflection of stray light at an end face of an opening of a wiring board and enable manufacturing in less manufacturing process.SOLUTION: A solid state image pickup device 1 comprises: a semiconductor chip 2 having an imaging region 2a; a wiring board 3 which has an opening 3a at least in a region corresponding to the imaging region 2a and which is bonded to a surface of the semiconductor chip 2 on the imaging region side; a translucent member 4 which is arranged on the wiring board 3 on the side opposite to the semiconductor chip 2 so as to cover the opening 3a and fixed to the surface of the wiring board 3 on the side opposite to the semiconductor chip 2; and an adhesive 6 which is an adhesive 6 for bonding the wiring board 3 and the semiconductor chip 2 and has light reflection reducing characteristics and extends to an end face 3b of the opening 3a.

Description

本発明は、固体撮像装置及びその製造方法、並びに、前記固体撮像装置を用いた電子カメラに関するものである。   The present invention relates to a solid-state imaging device, a manufacturing method thereof, and an electronic camera using the solid-state imaging device.

固体撮像装置の一例として、下記特許文献１の図４には、光通過孔の形成された基板と、この基板の一方の面に前記光通過孔を閉塞するように設置されたカバーガラスと、前記基板の他方の面に前記光通過孔を閉塞するように設置された固体撮像素子とから構成された撮像部が、開示されている。   As an example of the solid-state imaging device, FIG. 4 of the following Patent Document 1 includes a substrate on which a light passage hole is formed, and a cover glass installed on one surface of the substrate so as to close the light passage hole, An imaging unit is disclosed that includes a solid-state imaging device installed on the other surface of the substrate so as to close the light passage hole.

特開２０００−１４７３４６号公報JP 2000-147346 A

しかし、前記従来の固体撮像装置では、入射した迷光が、基板の開口部の端面で反射されて固体撮像素子の撮像領域に入射してしまい、撮像画像の画質が低下してしまう。   However, in the conventional solid-state imaging device, the incident stray light is reflected by the end face of the opening of the substrate and enters the imaging region of the solid-state imaging device, and the quality of the captured image is degraded.

また、固体撮像装置では、コスト低減のために、少ない製造工程で製造することができることが要請されることは、言うまでもない。   Needless to say, the solid-state imaging device is required to be manufactured with a small number of manufacturing steps in order to reduce costs.

本発明は、このような事情に鑑みてなされたもので、配線基板の開口部の端面での迷光の反射を低減することができ、しかも少ない製造工程で製造することができる固体撮像装置及びその製造方法、並びに、これを用いた電子カメラを提供することを目的とする。   The present invention has been made in view of such circumstances, and can reduce the reflection of stray light at the end face of the opening of the wiring board, and can be manufactured with a small number of manufacturing steps, and the same It is an object of the present invention to provide a manufacturing method and an electronic camera using the same.

前記課題を解決するための手段として、以下の各態様を提示する。第１の態様による固体撮像装置は、撮像領域を有する半導体チップと、少なくとも前記撮像領域と対応する領域に開口部を有し、前記半導体チップにおける前記撮像領域側の面に接合された配線基板と、前記配線基板の前記半導体チップとは反対側において前記開口部を覆うように配置され、前記配線基板の前記半導体チップとは反対側の面に対して固定された透光性部材と、前記配線基板と前記半導体チップとを接合する接着剤であって、光反射低減特性を有し前記開口部の端面に延在した接着剤と、を備えたものである。   The following aspects are presented as means for solving the problems. A solid-state imaging device according to a first aspect includes a semiconductor chip having an imaging region, a wiring board having an opening at least in a region corresponding to the imaging region, and bonded to a surface of the semiconductor chip on the imaging region side; A translucent member disposed to cover the opening on the opposite side of the wiring substrate from the semiconductor chip and fixed to a surface of the wiring substrate opposite to the semiconductor chip; and the wiring An adhesive for bonding a substrate and the semiconductor chip, and having an optical reflection reduction characteristic and extending to an end face of the opening.

第２の態様による固体撮像装置の製造方法は、前記第１の態様による固体撮像装置であって、前記半導体チップと前記配線基板との間がバンプにより電気的に接続された固体撮像装置を製造する方法であって、前記接着剤を塗布する段階であって、前記バンプの配置密度が相対的に高い付近における前記接着剤の塗布量を、前記バンプの配置密度が相対的に低い付近における前記接着剤の塗布量よりも小さくした段階を、備えたものである。   The manufacturing method of the solid-state imaging device according to the second aspect is the solid-state imaging device according to the first aspect, in which the semiconductor chip and the wiring board are electrically connected by bumps. A method of applying the adhesive, the amount of the adhesive applied in the vicinity of a relatively high density of bumps, and the amount of the adhesive in the vicinity of a relatively low density of the bumps. A stage having a smaller amount than that of the adhesive is provided.

第３の態様による固体撮像装置は、撮像領域を有する半導体チップと、少なくとも前記撮像領域と対応する領域に開口部を有し、前記半導体チップにおける前記撮像領域側の面に接合された配線基板と、前記配線基板の前記半導体チップとは反対側において前記開口部を覆うように配置され、前記配線基板の前記半導体チップとは反対側の面に対して固定された透光性部材と、前記透光性部材を前記配線基板に対して固定する接着剤であって、光反射低減特性を有し前記開口部の端面に延在した接着剤と、を備えたものである。   A solid-state imaging device according to a third aspect includes a semiconductor chip having an imaging region, a wiring board having an opening at least in a region corresponding to the imaging region, and bonded to a surface of the semiconductor chip on the imaging region side; A translucent member disposed on the opposite side of the wiring substrate from the semiconductor chip so as to cover the opening, and fixed to a surface of the wiring substrate opposite to the semiconductor chip; An adhesive for fixing the optical member to the wiring board, the adhesive having light reflection reduction characteristics, and extending to the end face of the opening.

第４の態様による電子カメラは、前記第１又は第３の態様による固体撮像装置を備えたものである。   An electronic camera according to a fourth aspect includes the solid-state imaging device according to the first or third aspect.

本発明によれば、配線基板の開口部の端面での迷光の反射を低減することができ、しかも少ない製造工程で製造することができる固体撮像装置及びその製造方法、並びに、これを用いた電子カメラを提供することができる。   According to the present invention, the reflection of stray light at the end face of the opening of the wiring board can be reduced, and the solid-state imaging device that can be manufactured with few manufacturing steps, the manufacturing method thereof, and the electronic device using the same A camera can be provided.

本発明の第１の実施の形態による固体撮像装置を模式的に示す概略平面図である。1 is a schematic plan view schematically showing a solid-state imaging device according to a first embodiment of the present invention. 図１中のＡ−Ａ’線に沿った概略断面図である。It is a schematic sectional drawing in alignment with the A-A 'line in FIG. 図１中のＢ−Ｂ’線に沿った概略断面図である。It is a schematic sectional drawing in alignment with the B-B 'line in FIG. 図３中の一部を拡大した拡大概略断面図である。FIG. 4 is an enlarged schematic cross-sectional view in which a part of FIG. 3 is enlarged. 比較例による固体撮像装置の一部を拡大した拡大概略断面図である。It is the expansion schematic sectional drawing which expanded some solid imaging devices by a comparative example. 本発明の第２の実施の形態による電子カメラを模式的に示す概略断面図である。It is a schematic sectional drawing which shows typically the electronic camera by the 2nd Embodiment of this invention. 本発明の第３の実施の形態による固体撮像装置の一部を拡大した拡大概略断面図である。It is the expansion schematic sectional drawing which expanded a part of solid-state imaging device by the 3rd Embodiment of this invention.

以下、本発明による固体撮像装置及びその製造方法、並びに電子カメラについて、図面を参照して説明する。   Hereinafter, a solid-state imaging device, a manufacturing method thereof, and an electronic camera according to the present invention will be described with reference to the drawings.

［第１の実施の形態］
図１は、本発明の第１の実施の形態による固体撮像装置１を模式的に示す概略平面図である。図２は、図１中のＡ−Ａ’線に沿った概略断面図である。図３は、図１中のＢ−Ｂ’線に沿った概略断面図である。図４は、図３中の一部を拡大した拡大概略断面図である。 [First Embodiment]
FIG. 1 is a schematic plan view schematically showing the solid-state imaging device 1 according to the first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view taken along the line AA ′ in FIG. FIG. 3 is a schematic cross-sectional view along the line BB ′ in FIG. FIG. 4 is an enlarged schematic cross-sectional view in which a part of FIG. 3 is enlarged.

本実施の形態による固体撮像装置１は、撮像領域２ａを有する半導体チップ２と、配線基板３と、透光性部材としての透光性板４とを備えている。   The solid-state imaging device 1 according to the present embodiment includes a semiconductor chip 2 having an imaging region 2a, a wiring board 3, and a translucent plate 4 as a translucent member.

本実施の形態では、半導体チップ２は、チップとして構成されたＣＭＯＳ、ＣＣＤ等のイメージセンサであり、撮像領域２ａには複数の画素（図示せず）が２次元状に配置されている。半導体チップ２は、透光性板４を介して撮像領域２ａに入射した入射光を光電変換して、画像信号を出力する。半導体チップ２には、例えば、前記画素を駆動して画像信号を読み出す読み出し回路（図示せず）や、出力信号を処理する処理回路（例えば、ＡＤ変換回路等）を搭載してもよい。   In the present embodiment, the semiconductor chip 2 is an image sensor such as a CMOS or CCD configured as a chip, and a plurality of pixels (not shown) are two-dimensionally arranged in the imaging region 2a. The semiconductor chip 2 photoelectrically converts incident light incident on the imaging region 2a via the translucent plate 4 and outputs an image signal. For example, a read circuit (not shown) that reads the image signal by driving the pixel and a processing circuit (for example, an AD conversion circuit) that processes the output signal may be mounted on the semiconductor chip 2.

本実施の形態では、半導体チップ２の基板材料はシリコンとされ、半導体チップ２はいわゆるシリコンチップとなっている。もっとも、本発明では、半導体チップ２の基板材料は必ずしもシリコンに限定されるものではない。   In the present embodiment, the substrate material of the semiconductor chip 2 is silicon, and the semiconductor chip 2 is a so-called silicon chip. However, in the present invention, the substrate material of the semiconductor chip 2 is not necessarily limited to silicon.

本実施の形態では、配線基板３として、フレキシブル配線基板が用いられている。配線基板３には、所定の回路を搭載するように回路部品を搭載してもよいし、回路部品を搭載せずに中継用配線のみを搭載してもよい。配線基板３は、少なくとも半導体チップ２の撮像領域２ａと対向する領域に形成された開口部３ａを有している。   In the present embodiment, a flexible wiring board is used as the wiring board 3. A circuit component may be mounted on the wiring board 3 so as to mount a predetermined circuit, or only the relay wiring may be mounted without mounting the circuit component. The wiring board 3 has an opening 3 a formed at least in a region facing the imaging region 2 a of the semiconductor chip 2.

半導体チップ２の外周付近の上面（撮像領域２ａ側の面）に電極パッド（図示せず）が形成され、配線基板３における開口部３ａの周囲の下面に電極パッド（図示せず）が形成され、それらの間がＡｕスタッドバンプ、半田バンプ又はＡｕメッキバンプ等のバンプ５によって接合されている。半導体チップ２の外周付近と配線基板３における開口部３ａの周囲との間（バンプ５の付近を含む）には、接着剤６が形成され、これにより、撮像領域２ａと透光性板４との間の空間の気密性が保たれるようになっている。また、接着剤６によって、バンプ５による接合が補強されている。なお、前記電極パッド間の接合はバンプ５による接合に限らない。例えば、バンプ５による接合に代えてあるいはバンプ５による接合と共に、前記電極パッド間をＡＣＦ（Anisotropic Conductive Film：異方性導電膜）で接合してもよい。   An electrode pad (not shown) is formed on the upper surface (surface on the imaging region 2 a side) near the outer periphery of the semiconductor chip 2, and an electrode pad (not shown) is formed on the lower surface around the opening 3 a in the wiring substrate 3. These are joined by bumps 5 such as Au stud bumps, solder bumps or Au plated bumps. An adhesive 6 is formed between the vicinity of the outer periphery of the semiconductor chip 2 and the periphery of the opening 3a in the wiring board 3 (including the vicinity of the bumps 5), whereby the imaging region 2a, the translucent plate 4 and The airtightness of the space between them is maintained. Further, the bonding by the bumps 5 is reinforced by the adhesive 6. The bonding between the electrode pads is not limited to the bonding by the bump 5. For example, the electrode pads may be joined by an ACF (Anisotropic Conductive Film) instead of the bumps 5 or together with the bumps 5.

本実施の形態では、バンプ５は、半導体チップ２の図１中の左辺及び右辺に沿った箇所にのみ形成されている。もっとも、本発明では、バンプ５は、半導体チップ２の図１中の上辺及び下辺に沿った箇所にも形成し、半導体チップ２の外周の全周に沿った箇所に形成してもよい。   In the present embodiment, the bumps 5 are formed only at locations along the left and right sides of the semiconductor chip 2 in FIG. However, in the present invention, the bumps 5 may be formed at locations along the upper and lower sides of the semiconductor chip 2 in FIG. 1 and at locations along the entire outer periphery of the semiconductor chip 2.

本実施の形態では、接着剤６として、光反射低減特性を有する接着剤が用いられている。接着剤６は、配線基板３の開口部３ａの端面３ｂにも延在するように設けられている。本発明では、接着剤６は、光反射低減特性として、例えば、可視光に関して、後述する図５に示す比較例のように接着剤６が端面３ｂに延在していない場合における端面３ｂでの反射率よりも低い反射率を有していればよく、例えば、２０％以下の反射率を有することが好ましく、１０％以下の反射率がより好ましく、５％以下の反射率を有することがより一層好ましい。具体的には、接着剤６として、例えば、ブラックカーボンが混入され黒色又は黒色に近い暗色を呈する樹脂による接着剤（例えば、ＮＣＰ（Non-Conductive Paste）など）を用いることができる。   In the present embodiment, an adhesive having light reflection reduction characteristics is used as the adhesive 6. The adhesive 6 is provided so as to extend also to the end surface 3 b of the opening 3 a of the wiring board 3. In the present invention, the adhesive 6 has a light reflection reduction characteristic, for example, for visible light, on the end surface 3b when the adhesive 6 does not extend to the end surface 3b as in a comparative example shown in FIG. What is necessary is just to have a reflectance lower than a reflectance, for example, it is preferable to have a reflectance of 20% or less, a reflectance of 10% or less is more preferable, and a reflectance of 5% or less is more preferable. Even more preferred. Specifically, as the adhesive 6, for example, an adhesive (for example, NCP (Non-Conductive Paste) or the like) made of a resin mixed with black carbon and exhibiting a black color or a dark color close to black can be used.

透光性板４は、配線基板３の上面（配線基板３の側と反対側の面）側において配線基板３の開口部３ａを覆うように配置され、配線基板３の上面に対して固定されている。本実施の形態では、配線基板３における開口部３ａの周囲の上面と透光性板４との間に接着剤７が形成されている。これにより、透光性板４が配線基板３の上面に対して固定されている。必要に応じて、透光性板４と配線基板３との間にスペーサ部材等を介在させてもよい。本実施の形態では、接着剤７は、配線基板３における開口部３ａの全周に渡って設けられ、撮像領域２ａと透光性板４との間の空間の気密性が保たれるように、透光性板４と配線基板３との間が封止されている。   The translucent plate 4 is disposed so as to cover the opening 3 a of the wiring substrate 3 on the upper surface (surface opposite to the wiring substrate 3) side of the wiring substrate 3, and is fixed to the upper surface of the wiring substrate 3. ing. In the present embodiment, an adhesive 7 is formed between the upper surface around the opening 3 a in the wiring substrate 3 and the translucent plate 4. Thereby, the translucent plate 4 is fixed to the upper surface of the wiring board 3. If necessary, a spacer member or the like may be interposed between the translucent plate 4 and the wiring board 3. In the present embodiment, the adhesive 7 is provided over the entire circumference of the opening 3a in the wiring board 3 so that the airtightness of the space between the imaging region 2a and the translucent plate 4 is maintained. The space between the translucent plate 4 and the wiring board 3 is sealed.

透光性板４の材料としては、例えば、α線対策のガラス（α線の放出量を十分に低減したガラス）や、光学ローパスフィルタである水晶などを使用することができる。   As a material of the translucent plate 4, for example, glass for measures against α rays (glass in which the amount of α rays emitted is sufficiently reduced), quartz that is an optical low-pass filter, or the like can be used.

本実施の形態による固体撮像装置１を製造する場合、例えば、半導体チップ２と配線基板３とをバンプ５で接合した後に、接着剤６を半導体チップ２の外周付近における半導体チップ２と配線基板３との間に塗布するに際し、バンプ５の配置密度が相対的に高い付近（本実施の形態では、半導体チップ２の図１中の左辺及び右辺の付近）における接着剤６の塗布量を、バンプ５の配置密度が相対的に低い付近（本実施の形態では、半導体チップ２の図１中の上辺及び下辺の付近）における接着剤６の塗布量よりも小さくすることが好ましい。これにより、半導体チップ２と配線基板３との間の介在物であるバンプ５の体積に応じて塗布量をコントロールして、いずれの箇所においても、接着剤６の端面３ｂへの延在具合をほぼ均一になるようにすることができる。   When manufacturing the solid-state imaging device 1 according to the present embodiment, for example, after bonding the semiconductor chip 2 and the wiring board 3 with the bumps 5, the adhesive 6 is applied to the semiconductor chip 2 and the wiring board 3 in the vicinity of the outer periphery of the semiconductor chip 2. Is applied to the bumps 5 in the vicinity where the arrangement density of the bumps 5 is relatively high (in the present embodiment, the vicinity of the left side and the right side of the semiconductor chip 2 in FIG. 1) 5 is preferably smaller than the application amount of the adhesive 6 in the vicinity where the arrangement density is relatively low (in the present embodiment, in the vicinity of the upper side and the lower side in FIG. 1 of the semiconductor chip 2). Thereby, the application amount is controlled in accordance with the volume of the bump 5 which is an inclusion between the semiconductor chip 2 and the wiring substrate 3, and the extension state of the adhesive 6 to the end surface 3 b is determined at any location. It can be made almost uniform.

図５は、本実施の形態よる固体撮像装置１と比較される比較例による固体撮像装置９１の一部を拡大した拡大概略断面図であり、図４に対応している。図５において、図４中の要素と同一又は対応する要素には同一符号を付し、その重複する説明は省略する。   FIG. 5 is an enlarged schematic cross-sectional view of a part of the solid-state imaging device 91 according to the comparative example compared with the solid-state imaging device 1 according to the present embodiment, and corresponds to FIG. 5, elements that are the same as or correspond to those in FIG. 4 are given the same reference numerals, and redundant descriptions thereof are omitted.

この比較例による固体撮像装置９１が本実施の形態による固体撮像装置１と異なる所は、接着剤６が配線基板３の開口部３ａの端面３ｂに延在していない点のみである。したがって、この比較例では、撮影レンズより入射した迷光が、開口部３ａの端面３ｂで反射されて、半導体チップ２の撮像領域２ａに入射してしまうため、撮像画像の画質が低下してしまう。   The solid-state imaging device 91 according to this comparative example is different from the solid-state imaging device 1 according to the present embodiment only in that the adhesive 6 does not extend to the end surface 3b of the opening 3a of the wiring board 3. Therefore, in this comparative example, the stray light incident from the photographing lens is reflected by the end surface 3b of the opening 3a and enters the imaging region 2a of the semiconductor chip 2, so that the image quality of the captured image is deteriorated.

これに対し、本実施の形態では、接着剤６として光反射低減特性を有する接着剤が用いられ、接着剤６が配線基板３の開口部３ａの端面３ｂに延在している。したがって、本実施の形態によれば、配線基板３の開口部３ａの端面３ｂでの迷光の反射が低減され、端面３ｂで反射されて半導体チップ２の撮像領域２ａに入射してしまう迷光が低減され、撮像画像の画質が高まる。   In contrast, in the present embodiment, an adhesive having a light reflection reducing characteristic is used as the adhesive 6, and the adhesive 6 extends to the end surface 3 b of the opening 3 a of the wiring board 3. Therefore, according to the present embodiment, the reflection of stray light at the end surface 3b of the opening 3a of the wiring board 3 is reduced, and the stray light reflected by the end surface 3b and entering the imaging region 2a of the semiconductor chip 2 is reduced. As a result, the image quality of the captured image is enhanced.

そして、本実施の形態では、配線基板３と半導体チップ２との間を接合するためにそもそも用いられる接着剤６が、反射低減材としても用いられている。したがって、本実施の形態によれば、配線基板３の開口部３ａの端面３ｂに、接着剤６とは別に反射低減層をコーティングするような場合に比べて、少ない製造工程で製造することができ、コスト低減を図ることができる。   In the present embodiment, the adhesive 6 that is originally used for bonding between the wiring substrate 3 and the semiconductor chip 2 is also used as a reflection reducing material. Therefore, according to the present embodiment, it can be manufactured with fewer manufacturing steps as compared with the case where the end face 3b of the opening 3a of the wiring board 3 is coated with the reflection reducing layer separately from the adhesive 6. Cost reduction can be achieved.

［第２の実施の形態］
図６は、本発明の第２の実施の形態による電子カメラ１００を模式的に示す概略断面図である。 [Second Embodiment]
FIG. 6 is a schematic cross-sectional view schematically showing an electronic camera 100 according to the second embodiment of the present invention.

本実施の形態による電子カメラ１００のボディ１０１内には、前記第１の実施の形態による固体撮像装置１が組み込まれている。本実施の形態による電子カメラ１００は、一眼レフレックス型の電子スチルカメラとして構成されているが、前記第１の実施の形態による固体撮像装置１は、他の電子スチルカメラやビデオカメラや携帯電話機に搭載されたカメラ等の種々の電子カメラに組み込んでもよい。   The solid-state imaging device 1 according to the first embodiment is incorporated in the body 101 of the electronic camera 100 according to the present embodiment. The electronic camera 100 according to the present embodiment is configured as a single-lens reflex type electronic still camera. However, the solid-state imaging device 1 according to the first embodiment is different from other electronic still cameras, video cameras, and mobile phones. You may incorporate in various electronic cameras, such as a camera mounted in.

本実施の形態による電子カメラ１００では、ボディ１０１には交換式の撮影レンズ１０２が装着されている。撮影レンズ１０２を通過した被写体光はクイックリターンミラー１０３で上方に反射されてスクリーン１０４上に結像する。スクリーン１０４に結像した被写体像はペンタダハプリズム１０５から接眼レンズ１０６を通してファインダ観察窓１０７から観察される。クイックリターンミラー１０３は図示しないレリーズ釦が全押しされると上方に跳ね上がり、撮影レンズ１０２からの被写体像が前述した固体撮像装置１に入射する。   In electronic camera 100 according to the present embodiment, body 101 is provided with interchangeable photographic lens 102. The subject light that has passed through the photographing lens 102 is reflected upward by the quick return mirror 103 and forms an image on the screen 104. The subject image formed on the screen 104 is observed from the finder observation window 107 through the eyepiece lens 106 from the penta roof prism 105. When the release button (not shown) is fully pressed, the quick return mirror 103 jumps upward, and the subject image from the photographing lens 102 enters the solid-state imaging device 1 described above.

固体撮像装置１が、ブラケット（図示せず）及び位置調整機構（図示せず）等を介してボディ１０１に取り付けられることで、固体撮像装置１がボディ１０１内に位置決めして固定されている。   The solid-state imaging device 1 is positioned and fixed in the body 101 by being attached to the body 101 via a bracket (not shown) and a position adjusting mechanism (not shown).

本実施の形態によれば、前記第１の実施の形態による固体撮像装置１が用いられているので、撮像画像の高画質化及びコスト低減を図ることができる。   According to the present embodiment, since the solid-state imaging device 1 according to the first embodiment is used, it is possible to improve the image quality of the captured image and reduce the cost.

［第２の実施の形態］
図７は、本発明の第３の実施の形態による固体撮像装置１１の一部を拡大した拡大概略断面図であり、図４に対応している。図７において、図４中の要素と同一又は対応する要素には同一符号を付し、その重複する説明は省略する。 [Second Embodiment]
FIG. 7 is an enlarged schematic cross-sectional view of a part of the solid-state imaging device 11 according to the third embodiment of the present invention, and corresponds to FIG. 7, elements that are the same as or correspond to those in FIG. 4 are given the same reference numerals, and redundant descriptions thereof are omitted.

本実施の形態が前記第１の実施の形態と異なる所は、接着剤７として光反射低減特性を有する接着剤が用いられ、接着剤６は配線基板３の開口部３ａの端面３ｂに延在しておらず、その代わりに、接着剤７が配線基板３の開口部３ａの端面３ｂに延在している点である。本実施の形態では、接着剤６は必ずしも光反射低減特性を有している必要はない。   This embodiment differs from the first embodiment in that an adhesive having a light reflection reducing characteristic is used as the adhesive 7, and the adhesive 6 extends to the end surface 3 b of the opening 3 a of the wiring board 3. Instead, the adhesive 7 extends to the end surface 3b of the opening 3a of the wiring board 3 instead. In the present embodiment, the adhesive 6 does not necessarily have a light reflection reducing characteristic.

接着剤７は、光反射低減特性として、例えば、可視光に関して、後述する図５に示す比較例のように接着剤６，７が端面３ｂに延在していない場合における端面３ｂでの反射率よりも低い反射率を有していればよく、例えば、２０％以下の反射率を有することが好ましく、１０％以下の反射率がより好ましく、５％以下の反射率を有することがより一層好ましい。具体的には、接着剤７として、例えば、ブラックカーボンが混入され黒色又は黒色に近い暗色を呈する樹脂による接着剤（例えば、ナミックス社製 型番 : XS8455-201 など）を用いることができる。   The adhesive 7 has a light reflection reduction characteristic, for example, with respect to visible light, the reflectance at the end surface 3b when the adhesives 6 and 7 do not extend to the end surface 3b as in the comparative example shown in FIG. For example, preferably 20% or less, more preferably 10% or less, and even more preferably 5% or less. . Specifically, as the adhesive 7, for example, an adhesive (for example, model number: XS8455-201 manufactured by NAMICS Co., Ltd.) made of a resin that is mixed with black carbon and has a dark color close to black or black can be used.

本実施の形態によっても前記第１の実施の形態と同様の利点が得られる。   This embodiment can provide the same advantages as those of the first embodiment.

本実施の形態による固体撮像装置１１は、前記第２の実施の形態による電子カメラ１００において、固体撮像装置１の代わりに用いることができる。   The solid-state imaging device 11 according to the present embodiment can be used in place of the solid-state imaging device 1 in the electronic camera 100 according to the second embodiment.

以上、本発明の各実施の形態について説明したが、本発明はこれらの実施の形態に限定されるものではない。   Although the embodiments of the present invention have been described above, the present invention is not limited to these embodiments.

例えば、前記各実施の形態では、配線基板３としてフレキシブル配線基板が用いられているが、本発明では、配線基板３としてリジッド配線基板を用いてもよい。   For example, in each of the above embodiments, a flexible wiring board is used as the wiring board 3, but in the present invention, a rigid wiring board may be used as the wiring board 3.

１，１１ 固体撮像装置
２ 半導体チップ
２ａ 撮像領域
３ 配線基板
３ａ 開口部
３ｂ 端面
４ 透光性板（透光性部材）
５ バンプ
６，７ 接着剤 DESCRIPTION OF SYMBOLS 1,11 Solid-state imaging device 2 Semiconductor chip 2a Imaging area 3 Wiring board 3a Opening part 3b End surface 4 Translucent board (translucent member)
5 Bump 6, 7 Adhesive

Claims (4)

撮像領域を有する半導体チップと、
少なくとも前記撮像領域と対応する領域に開口部を有し、前記半導体チップにおける前記撮像領域側の面に接合された配線基板と、
前記配線基板の前記半導体チップとは反対側において前記開口部を覆うように配置され、前記配線基板の前記半導体チップとは反対側の面に対して固定された透光性部材と、
前記配線基板と前記半導体チップとを接合する接着剤であって、光反射低減特性を有し前記開口部の端面に延在した接着剤と、
を備えたことを特徴とする固体撮像装置。 A semiconductor chip having an imaging region;
A wiring board having an opening at least in a region corresponding to the imaging region and bonded to a surface of the semiconductor chip on the imaging region side;
A translucent member disposed to cover the opening on the opposite side of the wiring substrate from the semiconductor chip, and fixed to a surface of the wiring substrate opposite to the semiconductor chip;
An adhesive that joins the wiring substrate and the semiconductor chip, the adhesive having light reflection reduction characteristics, and extending to the end face of the opening,
A solid-state imaging device comprising: 請求項１記載の固体撮像装置であって、前記半導体チップと前記配線基板との間がバンプにより電気的に接続された固体撮像装置を製造する方法であって、
前記接着剤を塗布する段階であって、前記バンプの配置密度が相対的に高い付近における前記接着剤の塗布量を、前記バンプの配置密度が相対的に低い付近における前記接着剤の塗布量よりも小さくした段階を、
備えたことを特徴とする固体撮像装置の製造方法。 The solid-state imaging device according to claim 1, wherein the semiconductor chip and the wiring board are electrically connected by bumps, and a method for manufacturing the solid-state imaging device.
In the step of applying the adhesive, the application amount of the adhesive in the vicinity where the arrangement density of the bumps is relatively high is greater than the application amount of the adhesive in the vicinity where the arrangement density of the bumps is relatively low. The stage where
A method for manufacturing a solid-state imaging device. 撮像領域を有する半導体チップと、
少なくとも前記撮像領域と対応する領域に開口部を有し、前記半導体チップにおける前記撮像領域側の面に接合された配線基板と、
前記配線基板の前記半導体チップとは反対側において前記開口部を覆うように配置され、前記配線基板の前記半導体チップとは反対側の面に対して固定された透光性部材と、
前記透光性部材を前記配線基板に対して固定する接着剤であって、光反射低減特性を有し前記開口部の端面に延在した接着剤と、
を備えたことを特徴とする固体撮像装置。 A semiconductor chip having an imaging region;
A wiring board having an opening at least in a region corresponding to the imaging region and bonded to a surface of the semiconductor chip on the imaging region side;
A translucent member disposed to cover the opening on the opposite side of the wiring substrate from the semiconductor chip, and fixed to a surface of the wiring substrate opposite to the semiconductor chip;
An adhesive that fixes the translucent member to the wiring board, and has an optical reflection reduction property and extends to an end surface of the opening;
A solid-state imaging device comprising: 請求項１又は３記載の固体撮像装置を備えたことを特徴とする電子カメラ。   An electronic camera comprising the solid-state imaging device according to claim 1.
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JPH07183329A (en) * 1993-12-22 1995-07-21 Toshiba Corp Device package and manufacture thereof
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JPH0799214A (en) * 1993-05-28 1995-04-11 Toshiba Corp Mounting device for photoelectric transducer and its production
JPH07183329A (en) * 1993-12-22 1995-07-21 Toshiba Corp Device package and manufacture thereof
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