JP2014535129A - イオン注入装置用制御モジュール - Google Patents
イオン注入装置用制御モジュール Download PDFInfo
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- JP2014535129A JP2014535129A JP2014533957A JP2014533957A JP2014535129A JP 2014535129 A JP2014535129 A JP 2014535129A JP 2014533957 A JP2014533957 A JP 2014533957A JP 2014533957 A JP2014533957 A JP 2014533957A JP 2014535129 A JP2014535129 A JP 2014535129A
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- 238000005259 measurement Methods 0.000 claims abstract description 27
- 238000006386 neutralization reaction Methods 0.000 claims abstract description 18
- 238000005468 ion implantation Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 29
- 238000006073 displacement reaction Methods 0.000 claims description 20
- 238000002347 injection Methods 0.000 claims description 14
- 239000007924 injection Substances 0.000 claims description 14
- 239000003990 capacitor Substances 0.000 claims description 6
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 230000003472 neutralizing effect Effects 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 15
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32311—Circuits specially adapted for controlling the microwave discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32972—Spectral analysis
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0046—Arrangements for measuring currents or voltages or for indicating presence or sign thereof characterised by a specific application or detail not covered by any other subgroup of G01R19/00
- G01R19/0061—Measuring currents of particle-beams, currents from electron multipliers, photocurrents, ion currents; Measuring in plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
- H01J37/243—Beam current control or regulation circuits
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- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electron Sources, Ion Sources (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
- Hybrid Cells (AREA)
Abstract
Description
接地された正極を備えた発生器GEN、
発生器GENの負極に接続された第1の極と、電源の出力端子Oに接続された第2の極と、を備える第1のスイッチIT1、及び
出力端子Oに接続された第1の極と、接地された第2の極と、備える第2のスイッチIT2を備える。
ケーブルのキャパシタンス、
バイアス電圧をかけられた部品と接地された部品との間のキャパシタンス、特に、基板支持テーブルと注入チャンバーとの間のキャパシタンス、
絶縁変圧器のキャパシタンス、及び
プラズマシースのキャパシタンス、である。
Id = dQ/dt
電荷Qは、電圧Vに測定キャパシタンスCmをかけた積である。
Q = Cm.V
したがって、以下の関係が成立する。
Id = Cm.dV/dt + V.dCm/dt
上記の特許文献2は、上記の式の第一項のみを考慮している。すなわち、等価キャパシタンスが一定であることを仮定しているが、特に、プラズマシースの変化のために、このことは事実とは異なる。
接地された正極を備えた電圧発生器と、
該電圧発生器の負極に接続された第一の極と、該電源の出力端子に接続された第二の極と、を備えた第一のスイッチと、
該出力端子に接続された第一の極と、中性化端子に接続された第二の極と、を備えた第二のスイッチと、を備え、
さらに、該制御モジュールは、該第二のスイッチの該第二の極と該中性化端子との間を流れる変位電流を測定するための電流測定回路を含む。
変位電流測定回路AMP、
電源電流推定用の部材CUR、及び
制御回路CCである。
接地された正極を備えた高電圧発生器HT、
高電圧発生器HTの負極に接続された第一の極と、電源の出力端子Sに接続された第二の極と、を備えた第一のスイッチSW1、
出力端子Sに接続された第一の極と、直接、または、典型的に1キロオーム(kΩ)の抵抗値を有する放電抵抗Rdを経由して中性化端子Nに接続された第二の極と、を備えた第二のスイッチSW2、及び
好ましくは、高電圧発生器HTに並列に接続された調整キャパシタCrを含む。
Claims (10)
- 電源を備えたイオン注入装置用の制御モジュールであって、該電源は、
接地された正極を有する電圧発生器(HT)と、
該電圧発生器(HT)の負極に接続された第一の極と、該電源の出力端子(S)に接続された第二の極と、を備えた第一のスイッチ(SW1)と、
該出力端子(S)に接続された第一の極と、中性化端子(N)に接続された第二の極と、を備えた第二のスイッチ(SW2)と、を備え、
該第二のスイッチ(SW2)の該第二の極と該中性化端子(N)との間を流れる変位電流を測定するための電流測定回路(AMP)を含む制御モジュール。 - 該中性化端子(N)が、接地された請求項1に記載の制御モジュール。
- 該中性化端子(N)が、接地された負極を備えた電圧源の正極に接続された請求項1に記載の制御モジュール。
- 該電流測定回路(AMP)が、該第二のスイッチ(SW2)の該第二の極を該中性化端子(N)へ接続するケーブルを囲むコイルである請求項1から3のいずれかに記載の制御モジュール。
- 該電流測定回路(AMP)が、該第二のスイッチ(SW2)の該第二の極と該中性化端子(N)との間に接続された測定抵抗(Rm)と、該測定抵抗(Rm)に並列な積分キャパシタ(Ci)と、同様に該測定抵抗(Rm)に並列な電圧測定回路(U)と、を備えた請求項1から3のいずれかに記載の制御モジュール。
- 該電圧発生器(HT)の該負極と接地点との間に配置された調整キャパシタ(Cr)をさらに含む請求項1から5のいずれかに記載の制御モジュール。
- 該電圧発生器(HT)によって出力される電源電流を推定するための部材(CUR)を含み、該電源電流と該変位電流(AMP)との差をとることによって注入電流を推定するための制御回路(CC)をさらに含む請求項1から6のいずれかに記載の制御モジュール。
- 該電圧発生器(HT)によって出力される注入電流を推定し、二次電子検出器(DES)によって出力される外乱電流を受け取るための部材(CUR)を含み、該電源電流から該変位電流(AMP)及び該外乱電流を差し引くことによってイオン電流を推定するための制御回路(CC)をさらに含む請求項1から6のいずれかに記載の制御モジュール。
- 該制御回路(CC)は、分光器(SPC)によって定められた所定のイオン種の割合を受け取り、該制御回路(CC)は、注入される投与量を推定するために、該割合を該イオン電流に割り当てる請求項8に記載の制御モジュール。
- 請求項1から9のいずれかに記載の制御モジュールを備えたイオン注入装置であって、基板支持テーブル(PPS)を備え、該電源(PS)の該出力端子(S)は、該基板支持テーブル(PPS)に接続されているイオン注入装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1103003A FR2980911B1 (fr) | 2011-10-04 | 2011-10-04 | Module de commande pour implanteur ionique |
FR11/03003 | 2011-10-04 | ||
PCT/FR2012/000391 WO2013050670A1 (fr) | 2011-10-04 | 2012-10-03 | Module de commande pour implanteur ionique en mode immersion plasma |
Publications (2)
Publication Number | Publication Date |
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JP2014535129A true JP2014535129A (ja) | 2014-12-25 |
JP6039674B2 JP6039674B2 (ja) | 2016-12-07 |
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Application Number | Title | Priority Date | Filing Date |
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JP2014533957A Active JP6039674B2 (ja) | 2011-10-04 | 2012-10-03 | イオン注入装置用制御モジュール |
Country Status (11)
Country | Link |
---|---|
US (1) | US9035269B2 (ja) |
EP (1) | EP2764530B1 (ja) |
JP (1) | JP6039674B2 (ja) |
KR (1) | KR101963745B1 (ja) |
CN (1) | CN103930967B (ja) |
BR (1) | BR112014008047A2 (ja) |
FR (1) | FR2980911B1 (ja) |
RU (1) | RU2616599C2 (ja) |
SG (1) | SG11201400913WA (ja) |
TW (1) | TWI532085B (ja) |
WO (1) | WO2013050670A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2981193B1 (fr) * | 2011-10-06 | 2014-05-23 | Ion Beam Services | Procede de commande d'un implanteur ionique en mode immersion plasma. |
CA2889932A1 (en) * | 2012-10-30 | 2014-05-08 | Eaton Industries (Netherlands) B.V. | Medium voltage connection |
US9962533B2 (en) | 2013-02-14 | 2018-05-08 | William Harrison Zurn | Module for treatment of medical conditions; system for making module and methods of making module |
FR3045206B1 (fr) * | 2015-12-10 | 2020-01-03 | Ion Beam Services | Procede de commande pour un implanteur fonctionnant en immersion plasma |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003507906A (ja) * | 1999-08-06 | 2003-02-25 | アクセリス テクノロジーズ インコーポレーテッド | イオン注入システム及び方法 |
JP2003513439A (ja) * | 1999-10-27 | 2003-04-08 | バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド | プラズマ処理装置内の電流測定値から変位電流を除去するための方法及び装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5354381A (en) * | 1993-05-07 | 1994-10-11 | Varian Associates, Inc. | Plasma immersion ion implantation (PI3) apparatus |
AU2001282327A1 (en) * | 2000-09-18 | 2002-04-02 | Axcelis Technologies, Inc. | System and method for controlling sputtering and deposition effects in a plasma immersion implantation device |
FR2871934B1 (fr) * | 2004-06-16 | 2006-09-22 | Ion Beam Services Sa | Alimentation d'implanteur ionique prevue pour une limitation de l'effet de charge |
US7531469B2 (en) * | 2004-10-23 | 2009-05-12 | Applied Materials, Inc. | Dosimetry using optical emission spectroscopy/residual gas analyzer in conjunction with ion current |
US20100155600A1 (en) * | 2008-12-23 | 2010-06-24 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for plasma dose measurement |
US9309594B2 (en) * | 2010-04-26 | 2016-04-12 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution of a projected plasma |
US9685297B2 (en) * | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
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2011
- 2011-10-04 FR FR1103003A patent/FR2980911B1/fr not_active Expired - Fee Related
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2012
- 2012-10-03 CN CN201280049353.XA patent/CN103930967B/zh active Active
- 2012-10-03 BR BR112014008047A patent/BR112014008047A2/pt not_active Application Discontinuation
- 2012-10-03 JP JP2014533957A patent/JP6039674B2/ja active Active
- 2012-10-03 EP EP12794357.9A patent/EP2764530B1/fr active Active
- 2012-10-03 SG SG11201400913WA patent/SG11201400913WA/en unknown
- 2012-10-03 KR KR1020147010191A patent/KR101963745B1/ko active IP Right Grant
- 2012-10-03 US US14/349,499 patent/US9035269B2/en active Active
- 2012-10-03 RU RU2014111556A patent/RU2616599C2/ru active
- 2012-10-03 WO PCT/FR2012/000391 patent/WO2013050670A1/fr active Application Filing
- 2012-10-04 TW TW101136688A patent/TWI532085B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003507906A (ja) * | 1999-08-06 | 2003-02-25 | アクセリス テクノロジーズ インコーポレーテッド | イオン注入システム及び方法 |
JP2003513439A (ja) * | 1999-10-27 | 2003-04-08 | バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド | プラズマ処理装置内の電流測定値から変位電流を除去するための方法及び装置 |
Also Published As
Publication number | Publication date |
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KR20140086971A (ko) | 2014-07-08 |
CN103930967B (zh) | 2017-04-19 |
TW201334037A (zh) | 2013-08-16 |
SG11201400913WA (en) | 2014-08-28 |
JP6039674B2 (ja) | 2016-12-07 |
EP2764530B1 (fr) | 2019-11-20 |
FR2980911A1 (fr) | 2013-04-05 |
RU2616599C2 (ru) | 2017-04-18 |
BR112014008047A2 (pt) | 2017-04-11 |
US20140353525A1 (en) | 2014-12-04 |
FR2980911B1 (fr) | 2013-11-22 |
CN103930967A (zh) | 2014-07-16 |
TWI532085B (zh) | 2016-05-01 |
US9035269B2 (en) | 2015-05-19 |
KR101963745B1 (ko) | 2019-03-29 |
RU2014111556A (ru) | 2015-11-10 |
EP2764530A1 (fr) | 2014-08-13 |
WO2013050670A1 (fr) | 2013-04-11 |
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