JP2014522565A - プロセスチャンバ内の複数区域ヒータの温度を制御するための方法および装置 - Google Patents
プロセスチャンバ内の複数区域ヒータの温度を制御するための方法および装置 Download PDFInfo
- Publication number
- JP2014522565A JP2014522565A JP2014511522A JP2014511522A JP2014522565A JP 2014522565 A JP2014522565 A JP 2014522565A JP 2014511522 A JP2014511522 A JP 2014511522A JP 2014511522 A JP2014511522 A JP 2014511522A JP 2014522565 A JP2014522565 A JP 2014522565A
- Authority
- JP
- Japan
- Prior art keywords
- zone
- temperature
- resistance
- heater
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/1927—Control of temperature characterised by the use of electric means using a plurality of sensors
- G05D23/193—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces
- G05D23/1932—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces to control the temperature of a plurality of spaces
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
- G05D23/22—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element being a thermocouple
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
- G05D23/24—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor
- G05D23/2401—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor using a heating element as a sensing element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Remote Sensing (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
【選択図】図2B
Description
Claims (15)
- 基板支持体内に配設された複数区域ヒータと、
前記複数区域ヒータの第1の区域に第1の電力供給を提供し、前記複数区域ヒータの第2の区域に第2の電力供給を提供する電源と、
前記第1の区域によって引き出される電流と電圧を互いに対して最大で約110ミリ秒以内で測定するために、前記第1の電力供給に結合された抵抗測定デバイスと、
前記抵抗測定デバイスから受信されるデータに応答して前記電源を制御するために、前記電源および前記抵抗測定デバイスに結合されたコントローラと
を備える装置。 - 前記電源が、約190〜約240VAC電源である請求項1に記載の装置。
- 前記複数区域ヒータが、前記基板支持体上に支持される基板の中央部分および外側部分にそれぞれ対応する内側区域および外側区域を備え、前記外側区域が、前記複数区域ヒータの前記第1の区域であり、前記内側区域が、前記複数区域ヒータの前記第2の区域である請求項1に記載の装置。
- 前記抵抗測定デバイスが、約200kHz以上のサンプリングレートを有するホール効果電流センサを備える請求項1ないし3のいずれか一項に記載の装置。
- 前記電源が、交流電源であり、前記抵抗測定デバイスが、前記電源の各サイクルごとに、前記第1の区域によって引き出される電圧と電流の複数組の測定値を得ることが可能である請求項1ないし3のいずれか一項に記載の装置。
- 前記電源が、交流電源であり、前記抵抗測定デバイスが、前記電源の各サイクルごとに、前記第1の区域によって引き出される電圧と電流の少なくとも256組の測定値を得ることが可能である請求項1ないし3のいずれか一項に記載の装置。
- 前記コントローラが、前記第1の区域の抵抗の16ミリオームの変化を検出することができる請求項1ないし3のいずれか一項に記載の装置。
- 基板支持体内に配設された複数区域ヒータを制御する方法であって、前記複数区域ヒータが、第1の区域と第2の区域を有し、前記方法が、
第1の時点で前記第1の区域によって引き出される電流を測定することと、
前記第1の時点で前記第1の区域によって引き出される電圧を測定することと、
前記第1の時点で前記第1の区域によって引き出された測定された電流と電圧に基づいて、前記第1の区域の抵抗を計算することと、
前記第1の区域の抵抗と温度との所定の関係に基づいて、前記第1の区域の温度を決定することと、
前記温度決定に応答して前記第1の区域の温度を調節することと
を含む方法。 - 前記第1の区域の抵抗を計算することと、前記第1の区域の温度を決定することと、前記第1の区域の温度を調節することとが、前記第1の時点から約100ms以内の第2の時点に行われる請求項8に記載の方法。
- さらに、
前記第2の区域の温度を測定することと、
前記測定値に応答して前記第2の区域の温度を調節することと
を含む請求項8に記載の方法。 - 前記複数区域ヒータが、交流電源に接続され、前記第1の区域によって引き出される電圧と電源の複数組の測定値が、前記電源の各サイクルごとに取得され、各組の測定値が、同時に取得された電圧測定値と電流測定値とを含む請求項8ないし10のいずれか一項に記載の方法。
- 前記第1の区域が、外側区域であり、前記第2の区域が、前記外側区域の内側に配設された内側区域であり、前記第2の区域が加熱される前に、前記第1の区域が所望の温度まで加熱される請求項8ないし10のいずれか一項に記載の方法。
- 前記第1の区域が、外側区域であり、前記第2の区域が、前記外側区域の内側に配設された内側区域であり、前記第2の区域の温度を測定するために、前記第2の区域に熱電対が結合される請求項8ないし10のいずれか一項に記載の方法。
- 前記第1の区域の抵抗を前記第1の区域の温度に相関させることが、さらに、約0.5℃以内の精度で前記第1の区域の抵抗を前記第1の区域の温度に相関させることを含む請求項8ないし10のいずれか一項に記載の方法。
- 前記複数区域ヒータの前記第1の区域の温度が、約2.5℃以内の精度で調節される請求項8ないし10のいずれか一項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/113,015 US8552346B2 (en) | 2011-05-20 | 2011-05-20 | Methods and apparatus for controlling temperature of a multi-zone heater in an process chamber |
US13/113,015 | 2011-05-20 | ||
PCT/US2012/038294 WO2012162080A1 (en) | 2011-05-20 | 2012-05-17 | Methods and apparatus for controlling temperature of a multi-zone heater in a process chamber |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014522565A true JP2014522565A (ja) | 2014-09-04 |
JP6080842B2 JP6080842B2 (ja) | 2017-02-15 |
Family
ID=47174170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014511522A Expired - Fee Related JP6080842B2 (ja) | 2011-05-20 | 2012-05-17 | プロセスチャンバ内の複数区域ヒータの温度を制御するための方法および装置 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8552346B2 (ja) |
JP (1) | JP6080842B2 (ja) |
KR (1) | KR102017315B1 (ja) |
CN (2) | CN103563065A (ja) |
TW (1) | TWI579674B (ja) |
WO (1) | WO2012162080A1 (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016506070A (ja) * | 2012-12-18 | 2016-02-25 | ユ−ジーン テクノロジー カンパニー.リミテッド | 基板処理装置及びヒータの温度調節方法 |
WO2018034897A1 (en) * | 2016-08-19 | 2018-02-22 | Applied Materials, Inc. | Temperature measurement for substrate carrier using a heater element array |
KR20190100972A (ko) * | 2017-01-20 | 2019-08-29 | 램 리써치 코포레이션 | TCE들 (thermal control elements) 을 사용한 ESC 온도 추정을 위한 가상 계측 방법 |
JP2019212670A (ja) * | 2018-05-31 | 2019-12-12 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
KR20200038239A (ko) * | 2017-08-10 | 2020-04-10 | 와틀로 일렉트릭 매뉴팩츄어링 컴파니 | 히터에 공급되는 전력을 제어하는 시스템 및 방법 |
JP2020077880A (ja) * | 2016-06-24 | 2020-05-21 | 東京エレクトロン株式会社 | 基板処理システム |
JP2023514050A (ja) * | 2020-02-12 | 2023-04-05 | アプライド マテリアルズ インコーポレイテッド | 選択的予洗浄のための高速応答二重ゾーンペダルアセンブリ |
JP7479344B2 (ja) | 2018-08-08 | 2024-05-08 | ラム リサーチ コーポレーション | 抵抗熱測定を介するシャワーヘッド加熱の制御 |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9018567B2 (en) * | 2011-07-13 | 2015-04-28 | Asm International N.V. | Wafer processing apparatus with heated, rotating substrate support |
JP5973731B2 (ja) * | 2012-01-13 | 2016-08-23 | 東京エレクトロン株式会社 | プラズマ処理装置及びヒータの温度制御方法 |
TWI473170B (zh) * | 2013-01-16 | 2015-02-11 | Adpv Technology Ltd | Overspeed control heating method |
US20140251214A1 (en) | 2013-03-06 | 2014-09-11 | Applied Materials, Inc. | Heated substrate support with flatness control |
KR102489065B1 (ko) * | 2013-03-15 | 2023-01-13 | 어플라이드 머티어리얼스, 인코포레이티드 | Ald 플래튼 서셉터의 위치 및 온도 모니터링 |
DE102013109155A1 (de) * | 2013-08-23 | 2015-02-26 | Aixtron Se | Substratbehandlungsvorrichtung |
TWI558530B (zh) * | 2014-02-26 | 2016-11-21 | Ho Tien Technology Co Ltd | Heating module and heating method for plastic sheet forming |
CN105309376B (zh) * | 2014-06-30 | 2018-10-12 | 深圳美视创科技有限公司 | 一种半导体制冷制热恒温***及其鱼缸 |
TWI654332B (zh) * | 2014-07-02 | 2019-03-21 | 美商應用材料股份有限公司 | 用於電漿處理的多區域基座 |
US9915001B2 (en) | 2014-09-03 | 2018-03-13 | Silcotek Corp. | Chemical vapor deposition process and coated article |
KR101663486B1 (ko) | 2015-02-25 | 2016-10-07 | (주)티티에스 | 부하의 온도를 제어하는 부하 온도 제어 장치 |
US20170051407A1 (en) * | 2015-08-17 | 2017-02-23 | Applied Materials, Inc. | Heating Source For Spatial Atomic Layer Deposition |
WO2017040623A1 (en) | 2015-09-01 | 2017-03-09 | Silcotek Corp. | Thermal chemical vapor deposition coating |
DE102015226665A1 (de) * | 2015-12-23 | 2017-06-29 | Robert Bosch Gmbh | Elektrisch leitfähige Messschicht zum Messen einer Potentialdifferenz |
US10908195B2 (en) * | 2016-06-15 | 2021-02-02 | Watlow Electric Manufacturing Company | System and method for controlling power to a heater |
JP6688172B2 (ja) * | 2016-06-24 | 2020-04-28 | 東京エレクトロン株式会社 | 基板処理システムおよび方法 |
KR102630782B1 (ko) | 2016-08-19 | 2024-01-31 | 삼성전자주식회사 | 기판 처리 장치 |
US10809780B2 (en) * | 2017-03-13 | 2020-10-20 | Samsung Electronics Co., Ltd. | Active disturbance rejection based thermal control |
US10763141B2 (en) * | 2017-03-17 | 2020-09-01 | Applied Materials, Inc. | Non-contact temperature calibration tool for a substrate support and method of using the same |
US10636630B2 (en) * | 2017-07-27 | 2020-04-28 | Applied Materials, Inc. | Processing chamber and method with thermal control |
US11236422B2 (en) | 2017-11-17 | 2022-02-01 | Lam Research Corporation | Multi zone substrate support for ALD film property correction and tunability |
US10633742B2 (en) * | 2018-05-07 | 2020-04-28 | Lam Research Foundation | Use of voltage and current measurements to control dual zone ceramic pedestals |
CN112074941A (zh) * | 2018-05-24 | 2020-12-11 | 应用材料公司 | 用于空间分辨晶片温度控制的虚拟传感器 |
JP7094804B2 (ja) * | 2018-07-03 | 2022-07-04 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
WO2020010153A1 (en) | 2018-07-05 | 2020-01-09 | Lam Research Corporation | Dynamic temperature control of substrate support in substrate processing system |
US11183400B2 (en) * | 2018-08-08 | 2021-11-23 | Lam Research Corporation | Progressive heating of components of substrate processing systems using TCR element-based heaters |
CN111367328A (zh) * | 2018-12-26 | 2020-07-03 | 北京铂阳顶荣光伏科技有限公司 | 共蒸发设备和温度监控方法 |
WO2020185744A1 (en) * | 2019-03-13 | 2020-09-17 | Lam Research Corporation | Electrostatic chuck heater resistance measurement to approximate temperature |
TW202104657A (zh) * | 2019-03-15 | 2021-02-01 | 美商蘭姆研究公司 | 藉由調變多區域基板支撐件之溫度暫態的臨界尺寸不均勻性快速調整 |
WO2020252306A1 (en) | 2019-06-14 | 2020-12-17 | Silcotek Corp. | Nano-wire growth |
CN114175208B (zh) * | 2019-07-25 | 2024-05-24 | 朗姆研究公司 | 衬底处理*** |
US11551951B2 (en) * | 2020-05-05 | 2023-01-10 | Applied Materials, Inc. | Methods and systems for temperature control for a substrate |
US11493551B2 (en) | 2020-06-22 | 2022-11-08 | Advantest Test Solutions, Inc. | Integrated test cell using active thermal interposer (ATI) with parallel socket actuation |
US11549981B2 (en) | 2020-10-01 | 2023-01-10 | Advantest Test Solutions, Inc. | Thermal solution for massively parallel testing |
US11808812B2 (en) | 2020-11-02 | 2023-11-07 | Advantest Test Solutions, Inc. | Passive carrier-based device delivery for slot-based high-volume semiconductor test system |
US11821913B2 (en) | 2020-11-02 | 2023-11-21 | Advantest Test Solutions, Inc. | Shielded socket and carrier for high-volume test of semiconductor devices |
US20220155364A1 (en) | 2020-11-19 | 2022-05-19 | Advantest Test Solutions, Inc. | Wafer scale active thermal interposer for device testing |
US11609266B2 (en) | 2020-12-04 | 2023-03-21 | Advantest Test Solutions, Inc. | Active thermal interposer device |
CN114698174A (zh) * | 2020-12-31 | 2022-07-01 | 广东美的厨房电器制造有限公司 | 烹饪器具的控制方法、烹饪器具和可读存储介质 |
US11573262B2 (en) | 2020-12-31 | 2023-02-07 | Advantest Test Solutions, Inc. | Multi-input multi-zone thermal control for device testing |
US11587640B2 (en) | 2021-03-08 | 2023-02-21 | Advantest Test Solutions, Inc. | Carrier based high volume system level testing of devices with pop structures |
CN117242561A (zh) * | 2021-04-28 | 2023-12-15 | 朗姆研究公司 | 在基于高tcr控制中的信号滤波方案的使用 |
US20220367149A1 (en) * | 2021-05-12 | 2022-11-17 | Tokyo Electron Limited | Systems And Methods For Real-Time Pulse Measurement And Pulse Timing Adjustment To Control Plasma Process Performance |
US11656273B1 (en) | 2021-11-05 | 2023-05-23 | Advantest Test Solutions, Inc. | High current device testing apparatus and systems |
US11693051B1 (en) | 2022-10-21 | 2023-07-04 | AEM Holdings Ltd. | Thermal head for independent control of zones |
US11828795B1 (en) | 2022-10-21 | 2023-11-28 | AEM Holdings Ltd. | Test system with a thermal head comprising a plurality of adapters for independent thermal control of zones |
US11656272B1 (en) | 2022-10-21 | 2023-05-23 | AEM Holdings Ltd. | Test system with a thermal head comprising a plurality of adapters and one or more cold plates for independent control of zones |
US11796589B1 (en) | 2022-10-21 | 2023-10-24 | AEM Holdings Ltd. | Thermal head for independent control of zones |
US11828796B1 (en) | 2023-05-02 | 2023-11-28 | AEM Holdings Ltd. | Integrated heater and temperature measurement |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07153550A (ja) * | 1993-12-02 | 1995-06-16 | Chubu Electric Power Co Inc | 電気ヒ−タの温度制御方法 |
JPH10116885A (ja) * | 1996-10-08 | 1998-05-06 | Anelva Corp | 基板温度制御機構 |
JP2000235886A (ja) * | 1998-12-14 | 2000-08-29 | Tokyo Electron Ltd | 加熱手段の温度制御装置および温度制御方法 |
JP2000339039A (ja) * | 1999-05-25 | 2000-12-08 | Tokyo Electron Ltd | 加熱手段の温度制御方法、その装置及び熱処理装置 |
JP2004157989A (ja) * | 2002-09-12 | 2004-06-03 | Tokyo Electron Ltd | 温度制御装置及び処理装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5650082A (en) * | 1993-10-29 | 1997-07-22 | Applied Materials, Inc. | Profiled substrate heating |
JP3563224B2 (ja) * | 1996-03-25 | 2004-09-08 | 住友電気工業株式会社 | 半導体ウエハの評価方法、熱処理方法、および熱処理装置 |
US6469283B1 (en) | 1999-03-04 | 2002-10-22 | Applied Materials, Inc. | Method and apparatus for reducing thermal gradients within a substrate support |
US6423949B1 (en) * | 1999-05-19 | 2002-07-23 | Applied Materials, Inc. | Multi-zone resistive heater |
EP1391140B1 (en) * | 2001-04-30 | 2012-10-10 | Lam Research Corporation | Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support |
JP3866685B2 (ja) | 2003-05-09 | 2007-01-10 | 助川電気工業株式会社 | 電子衝撃加熱器の温度制御装置と温度制御方法 |
US7126091B1 (en) | 2005-03-23 | 2006-10-24 | Eclipse Energy Systems, Inc. | Workpiece holder for vacuum processing |
JP4786925B2 (ja) | 2005-04-04 | 2011-10-05 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
JP2007088411A (ja) | 2005-06-28 | 2007-04-05 | Hitachi High-Technologies Corp | 静電吸着装置およびウエハ処理装置ならびにプラズマ処理方法 |
JP5160802B2 (ja) | 2007-03-27 | 2013-03-13 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US8303715B2 (en) * | 2008-07-31 | 2012-11-06 | Tokyo Electron Limited | High throughput thermal treatment system and method of operating |
US8109669B2 (en) * | 2008-11-19 | 2012-02-07 | Applied Materials, Inc. | Temperature uniformity measurement during thermal processing |
-
2011
- 2011-05-20 US US13/113,015 patent/US8552346B2/en not_active Expired - Fee Related
-
2012
- 2012-05-17 KR KR1020137033834A patent/KR102017315B1/ko active IP Right Grant
- 2012-05-17 WO PCT/US2012/038294 patent/WO2012162080A1/en active Application Filing
- 2012-05-17 CN CN201280023374.4A patent/CN103563065A/zh active Pending
- 2012-05-17 CN CN201710342912.0A patent/CN107204306A/zh active Pending
- 2012-05-17 JP JP2014511522A patent/JP6080842B2/ja not_active Expired - Fee Related
- 2012-05-18 TW TW101117821A patent/TWI579674B/zh active
-
2013
- 2013-05-01 US US13/874,603 patent/US8772682B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07153550A (ja) * | 1993-12-02 | 1995-06-16 | Chubu Electric Power Co Inc | 電気ヒ−タの温度制御方法 |
JPH10116885A (ja) * | 1996-10-08 | 1998-05-06 | Anelva Corp | 基板温度制御機構 |
JP2000235886A (ja) * | 1998-12-14 | 2000-08-29 | Tokyo Electron Ltd | 加熱手段の温度制御装置および温度制御方法 |
US6627859B1 (en) * | 1998-12-14 | 2003-09-30 | Tokyo Electron Limited | Method and apparatus for temperature control of heater |
JP2000339039A (ja) * | 1999-05-25 | 2000-12-08 | Tokyo Electron Ltd | 加熱手段の温度制御方法、その装置及び熱処理装置 |
JP2004157989A (ja) * | 2002-09-12 | 2004-06-03 | Tokyo Electron Ltd | 温度制御装置及び処理装置 |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016506070A (ja) * | 2012-12-18 | 2016-02-25 | ユ−ジーン テクノロジー カンパニー.リミテッド | 基板処理装置及びヒータの温度調節方法 |
JP2020077880A (ja) * | 2016-06-24 | 2020-05-21 | 東京エレクトロン株式会社 | 基板処理システム |
WO2018034897A1 (en) * | 2016-08-19 | 2018-02-22 | Applied Materials, Inc. | Temperature measurement for substrate carrier using a heater element array |
US10366867B2 (en) | 2016-08-19 | 2019-07-30 | Applied Materials, Inc. | Temperature measurement for substrate carrier using a heater element array |
US11929241B2 (en) | 2016-08-19 | 2024-03-12 | Applied Materials, Inc. | Temperature measurement for substrate carrier using a heater element array |
US11361948B2 (en) | 2016-08-19 | 2022-06-14 | Applied Materials, Inc. | Temperature measurement for substrate carrier using a heater element array |
KR20190100972A (ko) * | 2017-01-20 | 2019-08-29 | 램 리써치 코포레이션 | TCE들 (thermal control elements) 을 사용한 ESC 온도 추정을 위한 가상 계측 방법 |
KR102533847B1 (ko) | 2017-01-20 | 2023-05-17 | 램 리써치 코포레이션 | TCE들 (thermal control elements) 을 사용한 ESC 온도 추정을 위한 가상 계측 방법 |
JP2020526870A (ja) * | 2017-08-10 | 2020-08-31 | ワットロー・エレクトリック・マニュファクチャリング・カンパニー | ヒータへの電力を制御するシステム及び方法 |
KR20200038239A (ko) * | 2017-08-10 | 2020-04-10 | 와틀로 일렉트릭 매뉴팩츄어링 컴파니 | 히터에 공급되는 전력을 제어하는 시스템 및 방법 |
JP7242567B2 (ja) | 2017-08-10 | 2023-03-20 | ワットロー・エレクトリック・マニュファクチャリング・カンパニー | ヒータへの電力を制御するシステム及び方法 |
KR102547953B1 (ko) * | 2017-08-10 | 2023-06-26 | 와틀로 일렉트릭 매뉴팩츄어링 컴파니 | 히터에 공급되는 전력을 제어하는 시스템 및 방법 |
JP2019212670A (ja) * | 2018-05-31 | 2019-12-12 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
JP7479344B2 (ja) | 2018-08-08 | 2024-05-08 | ラム リサーチ コーポレーション | 抵抗熱測定を介するシャワーヘッド加熱の制御 |
JP2023514050A (ja) * | 2020-02-12 | 2023-04-05 | アプライド マテリアルズ インコーポレイテッド | 選択的予洗浄のための高速応答二重ゾーンペダルアセンブリ |
Also Published As
Publication number | Publication date |
---|---|
US8772682B2 (en) | 2014-07-08 |
TW201250422A (en) | 2012-12-16 |
US20130270252A1 (en) | 2013-10-17 |
CN103563065A (zh) | 2014-02-05 |
WO2012162080A1 (en) | 2012-11-29 |
US20120292305A1 (en) | 2012-11-22 |
CN107204306A (zh) | 2017-09-26 |
TWI579674B (zh) | 2017-04-21 |
JP6080842B2 (ja) | 2017-02-15 |
KR102017315B1 (ko) | 2019-09-02 |
KR20140033444A (ko) | 2014-03-18 |
US8552346B2 (en) | 2013-10-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6080842B2 (ja) | プロセスチャンバ内の複数区域ヒータの温度を制御するための方法および装置 | |
JP4499274B2 (ja) | 半導体処理装置における温度測定方法および半導体処理方法 | |
TWI495752B (zh) | 具有可作為溫度控制用之流體區的工作支承 | |
US10763141B2 (en) | Non-contact temperature calibration tool for a substrate support and method of using the same | |
US7952049B2 (en) | Method for multi-step temperature control of a substrate | |
JP7326344B2 (ja) | 空間分解ウエハ温度制御のための仮想センサ | |
KR20090071614A (ko) | 기판 프로세싱 시스템용 불균일 절연층을 갖는 온도 제어식 기판 홀더 | |
US20080197125A1 (en) | Substrate heating method and apparatus | |
KR20060114284A (ko) | 열처리 장치 및 열처리 방법 | |
US20220172925A1 (en) | Electrostatic chuck heater resistance measurement to approximate temperature | |
US8002463B2 (en) | Method and device for determining the temperature of a substrate | |
JP2023526426A (ja) | 抵抗ヒーターのための受動的及び能動的な較正方法 | |
KR101509632B1 (ko) | 기판 처리 장치 및 방법 | |
JP2008240003A (ja) | 成膜方法、成膜装置及び記憶媒体 | |
JP2004157989A (ja) | 温度制御装置及び処理装置 | |
TWI840525B (zh) | 用以估計溫度的靜電卡盤加熱器電阻量測 | |
TWI837124B (zh) | 用於空間分辨晶圓溫度控制的虛擬感測器 | |
KR20220024891A (ko) | 멀티 존 페데스탈의 온도 제어 | |
JP2005032880A (ja) | 基板処理装置 | |
KR20110046955A (ko) | 기판 열처리 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150515 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20151202 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20151208 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160304 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160830 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161122 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20161220 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170117 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6080842 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |