JP2014517332A - 光−マイクロ電子デバイスの製造方法 - Google Patents
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 22
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- 239000010949 copper Substances 0.000 description 15
- 239000004973 liquid crystal related substance Substances 0.000 description 13
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
- G02F1/136281—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon having a transmissive semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Liquid Crystal (AREA)
- Micromachines (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
−第一段階は転写の前に実行され、且つ第一基板の層において犠牲材料から作製される少なくとも一つのパターンを形成することを含み、
−第二段階は転写の後に実行され、且つパターンのための電子部品の置換を含む、マイクロ電子デバイスを製造するための方法に関する。
12 機能層
14 配線層
15 埋め込み酸化物層
17 スクリーン
20 第二基板
30 ドナー基板
32 破砕面
34、110、411、421 裏返し
36、100 転写
40 中間基板、補助シリコン基板
50 液晶層
60 対向電極
70 光線
120 機械的及び化学的攻撃
130 初期基準位置
140 構成要素を定義するパターン
202 画素
210 酸化ケイ素層、犠牲層
212、214 開口部
216 ボックス
217 ITO電極
220、222 窒化ケイ素層
230 酸化物層
240 タングステンスクリーン
250 パターン
260 酸化ケイ素層、酸化物層
270 単結晶シリコン層
272 穴
273 酸化物
274 単結晶シリコンアイランド
276 選択トランジスタ
278、292、294 ビア
280 酸化物層
290、296 銅配線パターン
300 接続層
310 表面
320 追加の酸化ケイ素層、接続層
321 表面
Claims (24)
- 第一半導体基板(10)から光−マイクロ電子デバイスを製造する方法であって、第二基板(20)上への前記第一基板(10)の転写の後に、少なくとも一つの画素電極の製造を含み、
−第一段階が、前記転写の前に実行され、
i)前記第一基板(10)の表面に形成された層において、犠牲材料から作製された少なくとも一つのパターンの形成と、
ii)前記犠牲材料と異なる境界材料のエッジ(212)による、前記第一基板(10)の層における横方向のパターンの区切り、とを含み、
−第二段階が、前記転写の後に実行され、フォトリソグラフィーを用いることなく、前記犠牲材料を攻撃し、且つ前記境界材料を維持するように設計された、選択エッチングによる前記パターンの前記犠牲材料の除去、を含む前記パターンのための前記電極の置換、を含むことを特徴とする、光−マイクロ電子デバイスを製造する方法。 - 窒化ケイ素、又は多結晶シリコンが、前記境界材料として選択される、請求項1に記載の方法。
- 前記パターンは、前記エッジ(212)によって横方向に完全に囲まれるボックス(216)である、請求項1又は2に記載の方法。
- 前記エッジ(212)は、前記境界材料のパターンの周りの堆積によって得られ、前記境界材料の層(222)は、前記パターンを含む層の上部に形成される、請求項1から3の何れか一項に記載の方法。
- 前記エッジ(212)は、前記(222)の前記境界材料と異なる境界材料である、請求項1から4の何れか一項に記載の方法。
- 前記パターンの周りの堆積の後で、前記エッジ(212)の厚さ、及び横方向の最小寸法よりも低くなるまで、前記境界材料の層(222)が薄膜化される、請求項4又は5に記載の方法。
- 前記第一段階は、前記パターンに重ね合わさったライトスクリーン(240)を形成することを含む、請求項4から6の何れか一項に記載の方法。
- 前記スクリーン(240)は、前記第一基板(10)の上に形成された層においてフォトリソグラフィーによって形成され、且つ前記パターンを含む層に重ね合わさる、請求項1から7の何れか一項に記載の方法。
- 前記スクリーン(240)は、導電性材料に形成される、請求項7又は8に記載の方法。
- 前記導電性材料はタングステンである、請求項1から9の何れか一項に記載の方法。
- 前記第二段階は、前記パターンの前記犠牲材料の除去の後で、境界材料の層(222)を除去することを含む、請求項5又は6に記載の方法。
- 前記境界材料の層(222)を除去し、且つ前記エッジ(212)を維持するために、前記境界材料の層(222)の除去は、時間で制御されたエッチングによって実行される、請求項1から11の何れか一項に記載の方法。
- 前記パターンのための前記電極の置換は、前記パターンの前記犠牲材料の除去の後で、前記電極材料の堆積を含む、請求項1から12の何れか一項に記載の方法。
- 前記エッジ(212)の厚さのレベルへの、前記電子部品材料の前記堆積の前記厚さの薄膜化を含む、請求項1から13の何れか一項に記載の方法。
- 前記転写の前に、前記第一基板(10)の下位層の上の前記パターンを含む層を形成し、続いて、少なくとも一つの追加の電子部品を含む少なくとも一つの層を形成し、そして接続層(300)を形成することを含む、請求項1から14の何れか一項に記載の方法。
- 前記第二基板上への前記第一基板(10)の転写は、前記第一基板(10)の前記接続層(300)によって実行され、前記第一基板(10)の厚さは、前記パターンを含む層に到達するまで、前記下位層によって減少される、請求項15に記載の方法。
- 前記転写の前に、前記第一基板(10)の下位層の上に少なくとも一つの追加の電子部品を含む少なくとも一つの層を形成し、続いて前記パターンを含む層を形成し、そして接続層(320)を形成することを含み、
前記転写が、
−中間基板(40)上への前記接続層の外面による前記第一基板(10)の転写と、
−内面に到達するまでの、前記下位層による前記第一基板(10)の前記厚さの減少と、
−前記第二基板上への前記内面による前記第一基板(10)の転写と、
−前記中間基板(40)の除去、及び、前記パターンを含む層に到達するまでの、前記接続層(320)による前記第一基板(10)の前記厚さの減少と、を含む、請求項1から14の何れか一項に記載の方法。 - −前記スクリーン(240)を覆うパターン(250)を形成する段階と、
−酸化ケイ素の層(260)を堆積する段階と、
−研磨によって酸化ケイ素の層(260)を平らにする段階と、
−ドナー基板(30)から転写によって酸化ケイ素の層(260)の上に単結晶シリコンの層(270)を形成する段階と、を含む、請求項9又は10単独の、又は請求項11から16の何れか一項との組み合わせたの方法。 - 前記補助ドナー基板(30)の転写は、裏返し、及び、酸化ケイ素の層(260)上での前記ドナー基板(30)の接合と、続いて前記ドナー基板(30)を破壊し、単結晶シリコンの層(270)を残すように設計された熱処理と、を含む請求項1から18の何れか一項に記載の方法。
- 単結晶シリコンの層(270)における選択トランジスタの製造と、前記スクリーン(240)と前記選択トランジスタとを電気的に相互接続するビア(292)の製造とを含む、請求項18又は19に記載の方法。
- 前記ビア(292)の製造は、
−単結晶シリコンの層(270)からのエッチングと、
−前記パターン(250)上で前記エッチングを停止することと、
−前記スクリーン材料(240)を除去することなく、前記パターン材料(250)を除去するように設計された前記パターン(250)の選択エッチングとを含む、請求項1から20の何れか一項に記載の方法。 - 少なくとも一つのパターンを形成することが、フォトリソグラフィ−の段階を含む、請求項1から21の何れか一項に記載の方法。
- 前記犠牲材料は酸化ケイ素である、請求項1から22の何れか一項に記載の方法。
- 透過照明を備え、2.54cm未満の対角を有する画像装置を製造するための、請求項1から23の何れか一項に記載の方法。
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Application Number | Priority Date | Filing Date | Title |
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FR1153259 | 2011-04-14 | ||
FR1153259A FR2974233B1 (fr) | 2011-04-14 | 2011-04-14 | Procédé de fabrication pour la microélectronique |
PCT/EP2012/056595 WO2012140094A1 (fr) | 2011-04-14 | 2012-04-11 | Procede de fabrication d'un dispositif opto-microelectronique |
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JP2014517332A true JP2014517332A (ja) | 2014-07-17 |
JP6100236B2 JP6100236B2 (ja) | 2017-03-22 |
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US (1) | US8993368B2 (ja) |
EP (1) | EP2697825B1 (ja) |
JP (1) | JP6100236B2 (ja) |
FR (1) | FR2974233B1 (ja) |
WO (1) | WO2012140094A1 (ja) |
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WO2015193436A1 (en) | 2014-06-18 | 2015-12-23 | X-Celeprint Limited | Systems and methods for preparing gan and related materials for micro assembly |
KR101795480B1 (ko) * | 2015-04-06 | 2017-11-10 | 코닝정밀소재 주식회사 | 집적회로 패키지용 기판 |
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- 2012-04-11 WO PCT/EP2012/056595 patent/WO2012140094A1/fr active Application Filing
- 2012-04-11 EP EP12712702.5A patent/EP2697825B1/fr active Active
- 2012-04-11 JP JP2014504304A patent/JP6100236B2/ja active Active
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JPS6355529A (ja) * | 1986-08-25 | 1988-03-10 | Nec Corp | アクティブ・マトリクス液晶表示装置の製造方法 |
JPH0342628A (ja) * | 1989-07-10 | 1991-02-22 | Matsushita Electric Ind Co Ltd | 分布したシリコン・トランジスターを有する基板とこれからなる液晶表示装置とそれらの製法 |
JPH0973103A (ja) * | 1995-06-30 | 1997-03-18 | Canon Inc | 表示装置及びその製造方法 |
JP2009222978A (ja) * | 2008-03-17 | 2009-10-01 | Seiko Epson Corp | 電気光学装置の製造方法、電気光学装置および投射型表示装置 |
JP2010141287A (ja) * | 2008-12-11 | 2010-06-24 | Samsung Electro-Mechanics Co Ltd | 薄膜素子の製造方法 |
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US20140113404A1 (en) | 2014-04-24 |
FR2974233A1 (fr) | 2012-10-19 |
JP6100236B2 (ja) | 2017-03-22 |
FR2974233B1 (fr) | 2014-01-10 |
EP2697825A1 (fr) | 2014-02-19 |
EP2697825B1 (fr) | 2017-07-19 |
WO2012140094A1 (fr) | 2012-10-18 |
US8993368B2 (en) | 2015-03-31 |
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