JP2014510811A - イオン衝撃を使用して基板の表面を修正する方法 - Google Patents
イオン衝撃を使用して基板の表面を修正する方法 Download PDFInfo
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- 238000010849 ion bombardment Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 84
- 230000008569 process Effects 0.000 claims abstract description 83
- 150000001450 anions Chemical class 0.000 claims abstract description 32
- 150000002500 ions Chemical class 0.000 claims abstract description 15
- 239000007789 gas Substances 0.000 claims description 23
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 7
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 7
- 229920000307 polymer substrate Polymers 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 5
- 239000000460 chlorine Substances 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 claims description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 4
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 4
- 229920002284 Cellulose triacetate Polymers 0.000 claims description 3
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- -1 polyethylene terephthalate Polymers 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000004417 polycarbonate Substances 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/12—Chemical modification
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/14—Surface shaping of articles, e.g. embossing; Apparatus therefor by plasma treatment
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/12—Chemical modification
- C08J7/123—Treatment by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/12—Chemical modification
- C08J7/16—Chemical modification with polymerisable compounds
- C08J7/18—Chemical modification with polymerisable compounds using wave energy or particle radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Toxicology (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
本特許出願は、独国特許出願第102011013822.6号の優先権を主張し、この文書の開示内容は参照によって本明細書に組み込まれている。
Claims (14)
- イオン衝撃によって基板(6)の表面を修正するプロセスであって、
− 磁界支援型グロー放電によってプロセスガス(10)中でイオン(7)が生成され、
− 前記磁界支援型グロー放電が、電極(1)と、磁界(4)を発生させる少なくとも1つの磁石(3)とを有するマグネトロン(8,9)によって発生し、
− 前記プロセスガス(10)が少なくとも1種類の電気陰性成分を有し、したがって、前記磁界支援型グロー放電中に陰イオン(7)が発生し、
− 前記電極(1)の表面に発生する前記陰イオン(7)が、前記電極(1)に印加される電圧によって前記基板(6)の方向に加速され、
− 前記基板(6)に当たる前記陰イオン(7)によって前記基板(6)の表面の修正がもたらされ、
− 前記イオン衝撃によって、前記基板(6)内、少なくとも50nmの深さに達する表面構造(15)が、前記基板(6)の表面に形成される、
プロセス。 - 前記電圧が、1kHz〜250kHzの範囲内の周波数を有する、
請求項1に記載のプロセス。 - 前記プロセスガス(10)の前記電気陰性成分が酸素である、
請求項1または請求項2のいずれかに記載のプロセス。 - 前記プロセスガス(10)の前記電気陰性成分がフッ素または塩素である、
請求項1または請求項2に記載のプロセス。 - 前記マグネトロン(8,9)の前記電極(1)が、Al、Mg、Si、Tiのうちの少なくとも1種類の元素、または、これらの元素の少なくとも1種類を少なくとも10%の重量比で含んでいる合金、を含んでいる、
請求項1から請求項4のいずれかに記載のプロセス。 - 前記マグネトロンが、少なくとも1つの平面状のマグネトロン(8)を有する、
請求項1から請求項5のいずれかに記載のプロセス。 - 前記マグネトロンが、少なくとも1つの管状のマグネトロン(9)を有する、
請求項1から請求項6のいずれかに記載のプロセス。 - 前記基板に電圧が印加されない、
請求項1から請求項7のいずれかに記載のプロセス。 - 前記基板(6)がポリマ基板である、
請求項1から請求項8のいずれかに記載のプロセス。 - 前記基板(6)が、ポリエチレンテレフタレート(PET)、ポリカーボネート(PC)、ポリメタクリル酸メチル(PMMA)、エチレンテトラフルオロエチレン共重合体(ETFE)、ポリエチレンナフタレート(PEN)、またはトリアセチルセルロース(TAC)を含んでいる、
請求項9に記載のプロセス。 - 前記基板(6)の表面が、200秒を超えずに前記イオン(7)によって照射される、
請求項1から請求項10のいずれかに記載のプロセス。 - 前記イオン衝撃の間、前記基板(6)が、少なくとも1m/分の速度で移動する、
請求項1から請求項11のいずれかに記載のプロセス。 - 前記イオン衝撃によって、屈折率の勾配を形成する表面構造(15)が前記基板(6)の表面に形成される、
請求項1から請求項12のいずれかに記載のプロセス。 - 前記イオン衝撃によって形成される表面構造(15)によって、前記基板(6)の表面の反射が減少する、
請求項1から請求項13のいずれかに記載のプロセス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011013822.6 | 2011-03-14 | ||
DE102011013822A DE102011013822A1 (de) | 2011-03-14 | 2011-03-14 | Verfahren zur Modifizierung einer Oberfläche eines Substrats durch Ionenbeschuss |
PCT/EP2012/054480 WO2012123503A1 (de) | 2011-03-14 | 2012-03-14 | Verfahren zur modifizierung einer oberfläche eines substrats durch ionenbeschuss |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014510811A true JP2014510811A (ja) | 2014-05-01 |
JP5837624B2 JP5837624B2 (ja) | 2015-12-24 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2013558422A Active JP5837624B2 (ja) | 2011-03-14 | 2012-03-14 | イオン衝撃を使用して基板の表面を修正する方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20140072721A1 (ja) |
EP (1) | EP2686371B1 (ja) |
JP (1) | JP5837624B2 (ja) |
KR (1) | KR101907526B1 (ja) |
CN (1) | CN103703061B (ja) |
DE (1) | DE102011013822A1 (ja) |
WO (1) | WO2012123503A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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EP2952351B1 (en) * | 2013-01-30 | 2020-06-17 | Konica Minolta, Inc. | Method for manufacturing a droplet-discharging head substrate and for manufacturing a droplet-discharging head |
USD810256S1 (en) | 2016-01-08 | 2018-02-13 | Samsung Electronics Co., Ltd. | Air conditioner |
USD810254S1 (en) | 2016-01-08 | 2018-02-13 | Samsung Electronics Co., Ltd. | Air conditioner |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02254183A (ja) * | 1989-03-27 | 1990-10-12 | Furukawa Electric Co Ltd:The | 高分子フィルムのエッチング方法 |
JP2003008040A (ja) * | 2001-06-27 | 2003-01-10 | Fuji Photo Film Co Ltd | 導電膜 |
JP2004186082A (ja) * | 2002-12-05 | 2004-07-02 | Sekisui Chem Co Ltd | 放電プラズマ処理装置 |
JP2007051218A (ja) * | 2005-08-18 | 2007-03-01 | Tateyama Machine Kk | プラズマエッチング方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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DE4308633C2 (de) * | 1993-03-18 | 2001-07-19 | Leybold Ag | Verfahren und Vorrichtung zur Behandlung unbeschichteter Kunststoff-Folien |
US5378341A (en) * | 1993-10-13 | 1995-01-03 | The United States Of America As Represented By The Secretary Of The Air Force | Conical magnetron sputter source |
US5856018A (en) | 1996-06-17 | 1999-01-05 | Yazaki Corporation | Plastic articles having multi-layer antireflection coatings, and sol-gel process for depositing such coatings |
US6055929A (en) * | 1997-09-24 | 2000-05-02 | The Dow Chemical Company | Magnetron |
US6338777B1 (en) * | 1998-10-23 | 2002-01-15 | International Business Machines Corporation | Method and apparatus for sputtering thin films |
US6462482B1 (en) * | 1999-12-02 | 2002-10-08 | Anelva Corporation | Plasma processing system for sputter deposition applications |
JP4430209B2 (ja) * | 2000-07-18 | 2010-03-10 | 大倉工業株式会社 | 内面処理機能を備えたプラスチックチューブ製造装置、及び該装置を用いた内面処理プラスチックチューブの製造方法 |
DE10241708B4 (de) * | 2002-09-09 | 2005-09-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Reduzierung der Grenzflächenreflexion von Kunststoffsubstraten sowie derart modifiziertes Substrat und dessen Verwendung |
CN1276120C (zh) * | 2003-12-18 | 2006-09-20 | 黄山永新股份有限公司 | 高阻隔真空镀铝薄膜的生产工艺 |
DE202006017024U1 (de) * | 2006-11-07 | 2007-01-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung zum Behandeln von Substraten |
DE102006056578A1 (de) * | 2006-11-30 | 2008-06-05 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung einer Nanostruktur an einer Kunststoffoberfläche |
EP2197043A4 (en) * | 2007-09-19 | 2012-06-27 | Ulvac Inc | METHOD FOR MANUFACTURING SOLAR BATTERY |
-
2011
- 2011-03-14 DE DE102011013822A patent/DE102011013822A1/de not_active Withdrawn
-
2012
- 2012-03-14 WO PCT/EP2012/054480 patent/WO2012123503A1/de active Application Filing
- 2012-03-14 KR KR1020137026767A patent/KR101907526B1/ko active IP Right Grant
- 2012-03-14 CN CN201280023271.8A patent/CN103703061B/zh active Active
- 2012-03-14 JP JP2013558422A patent/JP5837624B2/ja active Active
- 2012-03-14 US US14/005,239 patent/US20140072721A1/en not_active Abandoned
- 2012-03-14 EP EP12712238.0A patent/EP2686371B1/de active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02254183A (ja) * | 1989-03-27 | 1990-10-12 | Furukawa Electric Co Ltd:The | 高分子フィルムのエッチング方法 |
JP2003008040A (ja) * | 2001-06-27 | 2003-01-10 | Fuji Photo Film Co Ltd | 導電膜 |
JP2004186082A (ja) * | 2002-12-05 | 2004-07-02 | Sekisui Chem Co Ltd | 放電プラズマ処理装置 |
JP2007051218A (ja) * | 2005-08-18 | 2007-03-01 | Tateyama Machine Kk | プラズマエッチング方法 |
Also Published As
Publication number | Publication date |
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CN103703061A (zh) | 2014-04-02 |
CN103703061B (zh) | 2015-08-19 |
US20140072721A1 (en) | 2014-03-13 |
EP2686371A1 (de) | 2014-01-22 |
KR101907526B1 (ko) | 2018-10-12 |
WO2012123503A1 (de) | 2012-09-20 |
EP2686371B1 (de) | 2018-11-21 |
KR20140038952A (ko) | 2014-03-31 |
JP5837624B2 (ja) | 2015-12-24 |
DE102011013822A1 (de) | 2012-09-20 |
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