JP2014504582A - 化学蒸着システムのためのチャックおよびその関連方法 - Google Patents
化学蒸着システムのためのチャックおよびその関連方法 Download PDFInfo
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000002243 precursor Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 230000008569 process Effects 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910003481 amorphous carbon Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4418—Methods for making free-standing articles
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
【選択図】図1
Description
Gilbertらが、米国特許第5,277,934号において、多結晶質シリコンの製造中にスタータフィラメント(starter filament)のためのグラファイトチャックを保護するための方法を開示した。
Claims (15)
- ウェルおよびフィラメントチャネルを備える第1のセクションと、
電極チャネルを有する第2のセクションと
を備えるチャック。 - 前記ウェルは、前記ウェルの底部表面から前記第1のセクションの一方の端部まで円周方向に延在する複数のスラットによって画定される、請求項1に記載のチャック。
- 前記複数のスラットの各々がウィンドウによって分離され、各ウィンドウが隣接するスラットの長さに少なくとも部分的に沿って延在する、請求項2に記載のチャック。
- 円筒形本体を有し、前記ウェルが、前記本体内で同軸に配置され、かつ、前記ウェルを円周方向において囲む壁によって少なくとも部分的に画定される、請求項1に記載のチャック。
- 前記ウェルの周りで円周方向に配置される複数のスロットをさらに備える、請求項1に記載のチャック。
- 前記複数のスロットの各々が前記ウェルの実質的に長さに沿って延在する、請求項5に記載のチャック。
- 前記ウェル、前記フィラメントチャネルおよび前記電極チャネルが、前記チャックの長手方向軸に沿って同軸に配置される、請求項1に記載のチャック。
- 円錐台形セクションおよび接触セクションを有し、前記円錐台形セクションがフィラメントチャネルを有しかつ円筒形状のウェルを同軸に囲むチャックと
前記フィラメントチャネル内で固定される端部を有するフィラメントと
を備える化学蒸着システム。 - 前記円筒形状のウェルが、前記フィラメントチャネルの直径より大きい直径を有する、請求項8に記載の化学蒸着システム。
- 第2のチャックをさらに備え、前記第2のチャックが、接触セクションと、フィラメントチャネルと、ウェルを円周方向において囲む円錐台形セクションとを有し、前記フィラメントが、前記第2のチャックの前記フィラメントチャネル内で固定される第2の端部を有する、請求項9に記載の化学蒸着システム。
- 前記フィラメントが、前記第1のチャックおよび前記第2のチャックの前記接触セクションを介して電流源に電気接続される、請求項10に記載の化学蒸着システム。
- 前記円錐台形セクションが、前記ウェルの内部容積を前記チャックの外部環境に流体的に接続させる複数のウィンドウを有する、請求項8に記載の化学蒸着システム。
- 前記複数のウィンドウの各々が、前記円錐台形セクションの長手方向軸に平行である前記ウェルの実質的に少なくとも一部分に沿って延在する、請求項12に記載の化学蒸着システム。
- 半導体ロッドを作る方法であって、
フィラメントチャネルと、円筒形状のウェルを同軸に囲む円錐台形セクションとを有する第1のチャックを、蒸着反応器内で固定するステップと、
フィラメントチャネルと、円筒形状のウェルを同軸に囲む円錐台形セクションとを有する第2のチャックを、前記蒸着反応器内で固定するステップと、
前記第1のチャックの前記フィラメントチャネル内でフィラメントの第1の端部を固定しかつ前記第2のチャックの前記フィラメントチャネル内で前記フィラメントの第2の端部を固定するステップと、
少なくとも1つの半導体前駆体化合物を前記蒸着反応器内に導入するステップと、
前記フィラメントを反応温度まで加熱するように前記フィラメントを通して電流を流し、これにより、前記少なくとも1つの半導体前駆体化合物のうちの少なくとも一部分を、加熱された前記フィラメント上で前記半導体に変換することを促進する、ステップと
を含む方法。 - 前記第1のチャックが前記円筒形状のウェルの周りに配置される複数のウィンドウを有する、請求項14に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/983,571 | 2011-01-03 | ||
US12/983,571 US10494714B2 (en) | 2011-01-03 | 2011-01-03 | Chuck for chemical vapor deposition systems and related methods therefor |
PCT/US2011/067178 WO2012094182A2 (en) | 2011-01-03 | 2011-12-23 | Chuck for chemical vapor deposition systems and related methods therefor |
Publications (2)
Publication Number | Publication Date |
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JP2014504582A true JP2014504582A (ja) | 2014-02-24 |
JP5872586B2 JP5872586B2 (ja) | 2016-03-01 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2013547594A Active JP5872586B2 (ja) | 2011-01-03 | 2011-12-23 | 化学蒸着システムのためのチャックおよびその関連方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US10494714B2 (ja) |
EP (1) | EP2661516B1 (ja) |
JP (1) | JP5872586B2 (ja) |
KR (1) | KR101938296B1 (ja) |
CN (1) | CN103459662B (ja) |
MY (1) | MY170869A (ja) |
TW (1) | TWI529846B (ja) |
WO (1) | WO2012094182A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170024609A (ko) | 2014-07-04 | 2017-03-07 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 다결정 실리콘 봉 제조용의 실리콘 심선 및 다결정 실리콘 봉의 제조 장치 |
JP2018087137A (ja) * | 2018-02-02 | 2018-06-07 | 信越化学工業株式会社 | 多結晶シリコン棒製造用のシリコン芯線および多結晶シリコン棒の製造装置 |
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US9102035B2 (en) * | 2012-03-12 | 2015-08-11 | MEMC Electronics Materials S.p.A. | Method for machining seed rods for use in a chemical vapor deposition polysilicon reactor |
JP6373724B2 (ja) * | 2014-11-04 | 2018-08-15 | 株式会社トクヤマ | 芯線ホルダ及びシリコンの製造方法 |
CN111527242B (zh) * | 2017-12-05 | 2021-09-07 | 瓦克化学股份公司 | 测定表面温度的方法 |
CN112203980B (zh) * | 2018-07-27 | 2023-04-21 | 瓦克化学股份公司 | 用于沉积多晶硅的电极 |
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- 2011-12-23 CN CN201180063930.6A patent/CN103459662B/zh active Active
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- 2011-12-23 JP JP2013547594A patent/JP5872586B2/ja active Active
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Publication number | Priority date | Publication date | Assignee | Title |
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KR20170024609A (ko) | 2014-07-04 | 2017-03-07 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 다결정 실리콘 봉 제조용의 실리콘 심선 및 다결정 실리콘 봉의 제조 장치 |
JP2018087137A (ja) * | 2018-02-02 | 2018-06-07 | 信越化学工業株式会社 | 多結晶シリコン棒製造用のシリコン芯線および多結晶シリコン棒の製造装置 |
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Publication number | Publication date |
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MY170869A (en) | 2019-09-11 |
EP2661516A2 (en) | 2013-11-13 |
WO2012094182A3 (en) | 2012-11-22 |
US10494714B2 (en) | 2019-12-03 |
TW201236104A (en) | 2012-09-01 |
EP2661516A4 (en) | 2015-11-18 |
US20120171845A1 (en) | 2012-07-05 |
JP5872586B2 (ja) | 2016-03-01 |
KR101938296B1 (ko) | 2019-01-14 |
WO2012094182A2 (en) | 2012-07-12 |
KR20140038936A (ko) | 2014-03-31 |
EP2661516B1 (en) | 2020-08-26 |
CN103459662B (zh) | 2017-01-18 |
CN103459662A (zh) | 2013-12-18 |
TWI529846B (zh) | 2016-04-11 |
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