JP2014504442A - 対称形流入口及び流出口を介して反応ガスを供給する基板処理装置 - Google Patents
対称形流入口及び流出口を介して反応ガスを供給する基板処理装置 Download PDFInfo
- Publication number
- JP2014504442A JP2014504442A JP2013531510A JP2013531510A JP2014504442A JP 2014504442 A JP2014504442 A JP 2014504442A JP 2013531510 A JP2013531510 A JP 2013531510A JP 2013531510 A JP2013531510 A JP 2013531510A JP 2014504442 A JP2014504442 A JP 2014504442A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- silicon
- antenna
- chamber
- reaction gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 155
- 239000012495 reaction gas Substances 0.000 title claims abstract description 89
- 238000000034 method Methods 0.000 claims abstract description 51
- 238000007599 discharging Methods 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 121
- 238000009792 diffusion process Methods 0.000 claims description 49
- 230000005684 electric field Effects 0.000 claims description 19
- 230000007423 decrease Effects 0.000 claims description 7
- 230000000903 blocking effect Effects 0.000 claims description 4
- 230000001965 increasing effect Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 description 151
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 148
- 229910052710 silicon Inorganic materials 0.000 description 146
- 239000010703 silicon Substances 0.000 description 146
- 238000010926 purge Methods 0.000 description 66
- 239000010410 layer Substances 0.000 description 50
- 238000000151 deposition Methods 0.000 description 36
- 239000010409 thin film Substances 0.000 description 36
- 239000012686 silicon precursor Substances 0.000 description 29
- 238000006243 chemical reaction Methods 0.000 description 24
- 239000006227 byproduct Substances 0.000 description 17
- 230000008021 deposition Effects 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 125000004122 cyclic group Chemical group 0.000 description 12
- 238000007736 thin film deposition technique Methods 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 239000002243 precursor Substances 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 125000004433 nitrogen atom Chemical group N* 0.000 description 7
- 125000004430 oxygen atom Chemical group O* 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- -1 Oxygen anion Chemical class 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000280 densification Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052743 krypton Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45504—Laminar flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32105—Oxidation of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3211—Nitridation of silicon-containing layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Analytical Chemistry (AREA)
- Fluid Mechanics (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】本発明の一実施形態によれば,基板処理装置は,基板に対する工程が行われるチャンバ;前記チャンバの内部に設けられ,前記基板が載置される基板支持台;及び前記チャンバの内部に反応ガスを供給する流入口及び前記チャンバ内部に供給された前記反応ガスを排出する流出口が対称をなして形成されるシャワーヘッドを備え,前記反応ガスは,前記チャンバの内部で前記基板と略同じ方向に流れる。
【選択図】図1
Description
Claims (7)
- 基板に対する工程が行われるチャンバ;
前記チャンバの内部に設けられ,前記基板が載置される基板支持台;及び
前記チャンバの内部に反応ガスを供給する流入口及び前記チャンバ内部に供給された前記反応ガスを排出する流出口が対称をなして形成されるシャワーヘッドを備え,
前記反応ガスは,前記チャンバの内部で前記基板と略同じ方向に流れることを特徴とする基板処理装置。 - 前記シャワーヘッドは,前記流入口に連結され前記反応ガスの流動方向に沿って断面積が増加する1つ以上の拡散流路を有することを特徴とする請求項1記載の基板処理装置。
- 前記シャワーヘッドは,前記流入口に連結され前記反応ガスの流動方向に沿って断面積が増加する複数の拡散流路と前記拡散流路を互いに連結する流入連結流路とを有することを特徴とする請求項1記載の基板処理装置。
- 前記拡散流入流路は,上下に配置されることを特徴とする請求項3記載の基板処理装置。
- 前記シャワーヘッドは,前記流出口に連結され前記反応ガスの流動方向に沿って断面積が減少する複数の収斂流路と前記収斂流路を互いに連結する流出連結流路とを有することを特徴とする請求項1記載の基板処理装置。
- 前記シャワーヘッドは,中央部分が中空になっているリング形状で,
前記基板処理装置は,前記中央部分に対応するように前記チャンバの上部に設けられ前記チャンバの内部に電界(electric field)を形成するアンテナを含み,
前記アンテナは,あらかじめ設定された中心線を基準に対称をなすように配置される第1及び第2アンテナを備え,
前記第1アンテナは,第1及び第2半径をそれぞれ有しあらかじめ設定された中心線を基準に一側及び他側にそれぞれ位置する半円形状の第1内側アンテナ及び第1中間アンテナと,前記第1内側アンテナ及び前記第1中間アンテナを互いに連結する第1連結アンテナと,を有し,
前記第2アンテナは,前記第1及び第2半径をそれぞれ有し前記中心線を基準に一側及び他側にそれぞれ位置する半円形状の第2中間アンテナ及び第2内側アンテナと,前記第2中間アンテナ及び前記第2内側アンテナを互いに連結する第2連結アンテナと,を備えることを特徴とする請求項1記載の基板処理装置。 - 前記基板処理装置は,前記基板支持台に連結され前記基板支持台とともに昇降する昇降軸及び前記昇降軸を駆動して前記基板支持台の上部に工程領域が形成される工程位置及び前記基板支持台の上部に前記基板が載置される解除位置に前記基板支持台を切り替える駆動部をさらに含み,
前記シャワーヘッドは,前記基板支持台が前記工程位置にある時,前記基板支持台の上部面のエッジと隣接する対向面及び前記対向面に形成され前記上部面のエッジに遮断ガスを吐出する下部吐出口を有することを特徴とする請求項1記載の基板処理装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100097151A KR101165326B1 (ko) | 2010-10-06 | 2010-10-06 | 대칭형 유입구 및 유출구를 통해 반응가스를 공급하는 기판 처리 장치 |
KR10-2010-0097151 | 2010-10-06 | ||
PCT/KR2011/007400 WO2012047035A2 (ko) | 2010-10-06 | 2011-10-06 | 대칭형 유입구 및 유출구를 통해 반응가스를 공급하는 기판 처리 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014504442A true JP2014504442A (ja) | 2014-02-20 |
JP5629830B2 JP5629830B2 (ja) | 2014-11-26 |
Family
ID=45928233
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013531510A Expired - Fee Related JP5629830B2 (ja) | 2010-10-06 | 2011-10-06 | 対称形流入口及び流出口を介して反応ガスを供給する基板処理装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20130186337A1 (ja) |
JP (1) | JP5629830B2 (ja) |
KR (1) | KR101165326B1 (ja) |
CN (1) | CN103155104A (ja) |
TW (1) | TWI457997B (ja) |
WO (1) | WO2012047035A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023182031A1 (ja) * | 2022-03-24 | 2023-09-28 | 東京エレクトロン株式会社 | 基板処理装置、および基板処理方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120035559A (ko) * | 2010-10-06 | 2012-04-16 | 주식회사 유진테크 | 반원 형상의 안테나를 구비하는 기판 처리 장치 |
KR101371435B1 (ko) * | 2012-01-04 | 2014-03-12 | 주식회사 유진테크 | 처리유닛을 포함하는 기판 처리 장치 |
KR101452828B1 (ko) * | 2012-08-28 | 2014-10-23 | 주식회사 유진테크 | 기판처리장치 |
KR101387518B1 (ko) * | 2012-08-28 | 2014-05-07 | 주식회사 유진테크 | 기판처리장치 |
KR101525210B1 (ko) * | 2013-12-20 | 2015-06-05 | 주식회사 유진테크 | 기판 처리장치 |
US10184179B2 (en) * | 2014-01-21 | 2019-01-22 | Applied Materials, Inc. | Atomic layer deposition processing chamber permitting low-pressure tool replacement |
FR3057390B1 (fr) * | 2016-10-11 | 2018-12-07 | Soitec | Four vertical avec dispositif de piegeage de contaminants |
KR20230035141A (ko) * | 2017-04-10 | 2023-03-10 | 피코순 오와이 | 균일한 증착 |
KR102116534B1 (ko) | 2018-06-25 | 2020-05-28 | 주식회사 에이치에스하이테크 | 기판 세정용 노즐 및 그 제조 방법 |
US10697062B2 (en) * | 2018-07-11 | 2020-06-30 | Applied Materials, Inc. | Gas flow guide design for uniform flow distribution and efficient purge |
US11486038B2 (en) | 2019-01-30 | 2022-11-01 | Applied Materials, Inc. | Asymmetric injection for better wafer uniformity |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0547669A (ja) * | 1991-03-20 | 1993-02-26 | Sumitomo Metal Ind Ltd | 気相成長装置 |
JP2000306841A (ja) * | 1999-04-19 | 2000-11-02 | Canon Inc | 処理装置 |
JP2003502501A (ja) * | 1999-06-19 | 2003-01-21 | ゼニテックインコーポレイテッド | 化学蒸着反応炉及びこれを利用した薄膜形成方法 |
JP2005026233A (ja) * | 1996-10-02 | 2005-01-27 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2005135907A (ja) * | 2003-10-28 | 2005-05-26 | Samsung Electronics Co Ltd | プラズマ発生用アンテナおよびこれを有するプラズマ処理装置 |
KR20060107683A (ko) * | 2005-04-11 | 2006-10-16 | 삼성전자주식회사 | 화학 기상 증착 장치 |
JP2006524911A (ja) * | 2003-04-30 | 2006-11-02 | アイクストロン、アーゲー | 一方を前処理した2種のプロセスガスを用いた半導体蒸着プロセス及び装置 |
JP2008540840A (ja) * | 2005-05-09 | 2008-11-20 | エイエスエム・ジェニテック・コリア・リミテッド | 複数の気体流入口を有する原子層堆積装置の反応器 |
KR20100077828A (ko) * | 2008-12-29 | 2010-07-08 | 주식회사 케이씨텍 | 원자층 증착장치 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5916369A (en) * | 1995-06-07 | 1999-06-29 | Applied Materials, Inc. | Gas inlets for wafer processing chamber |
US6000360A (en) * | 1996-07-03 | 1999-12-14 | Tokyo Electron Limited | Plasma processing apparatus |
TW436871B (en) * | 1996-10-02 | 2001-05-28 | Tokyo Electron Ltd | Plasma processing device |
US20020011215A1 (en) * | 1997-12-12 | 2002-01-31 | Goushu Tei | Plasma treatment apparatus and method of manufacturing optical parts using the same |
KR100862658B1 (ko) * | 2002-11-15 | 2008-10-10 | 삼성전자주식회사 | 반도체 처리 시스템의 가스 주입 장치 |
KR100651631B1 (ko) | 2005-11-30 | 2006-12-01 | 코닉시스템 주식회사 | 박막증착의 균일도를 향상시킬 수 있는 rtcvd 챔버 |
US8512509B2 (en) * | 2007-12-19 | 2013-08-20 | Applied Materials, Inc. | Plasma reactor gas distribution plate with radially distributed path splitting manifold |
-
2010
- 2010-10-06 KR KR1020100097151A patent/KR101165326B1/ko active IP Right Grant
-
2011
- 2011-09-28 TW TW100134942A patent/TWI457997B/zh not_active IP Right Cessation
- 2011-10-06 US US13/822,121 patent/US20130186337A1/en not_active Abandoned
- 2011-10-06 JP JP2013531510A patent/JP5629830B2/ja not_active Expired - Fee Related
- 2011-10-06 CN CN2011800482511A patent/CN103155104A/zh active Pending
- 2011-10-06 WO PCT/KR2011/007400 patent/WO2012047035A2/ko active Application Filing
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0547669A (ja) * | 1991-03-20 | 1993-02-26 | Sumitomo Metal Ind Ltd | 気相成長装置 |
JP2005026233A (ja) * | 1996-10-02 | 2005-01-27 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2000306841A (ja) * | 1999-04-19 | 2000-11-02 | Canon Inc | 処理装置 |
JP2003502501A (ja) * | 1999-06-19 | 2003-01-21 | ゼニテックインコーポレイテッド | 化学蒸着反応炉及びこれを利用した薄膜形成方法 |
JP2006524911A (ja) * | 2003-04-30 | 2006-11-02 | アイクストロン、アーゲー | 一方を前処理した2種のプロセスガスを用いた半導体蒸着プロセス及び装置 |
JP2005135907A (ja) * | 2003-10-28 | 2005-05-26 | Samsung Electronics Co Ltd | プラズマ発生用アンテナおよびこれを有するプラズマ処理装置 |
KR20060107683A (ko) * | 2005-04-11 | 2006-10-16 | 삼성전자주식회사 | 화학 기상 증착 장치 |
JP2008540840A (ja) * | 2005-05-09 | 2008-11-20 | エイエスエム・ジェニテック・コリア・リミテッド | 複数の気体流入口を有する原子層堆積装置の反応器 |
KR20100077828A (ko) * | 2008-12-29 | 2010-07-08 | 주식회사 케이씨텍 | 원자층 증착장치 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023182031A1 (ja) * | 2022-03-24 | 2023-09-28 | 東京エレクトロン株式会社 | 基板処理装置、および基板処理方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2012047035A3 (ko) | 2012-06-28 |
TWI457997B (zh) | 2014-10-21 |
KR20120035560A (ko) | 2012-04-16 |
US20130186337A1 (en) | 2013-07-25 |
KR101165326B1 (ko) | 2012-07-18 |
TW201230173A (en) | 2012-07-16 |
WO2012047035A2 (ko) | 2012-04-12 |
CN103155104A (zh) | 2013-06-12 |
JP5629830B2 (ja) | 2014-11-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5629830B2 (ja) | 対称形流入口及び流出口を介して反応ガスを供給する基板処理装置 | |
CN110318041B (zh) | 基底处理方法 | |
US11118265B2 (en) | Film deposition method and computer program storage medium | |
US9677174B2 (en) | Film deposition method for producing a reaction product on a substrate | |
US7825039B2 (en) | Vertical plasma processing method for forming silicon containing film | |
US9005459B2 (en) | Film deposition method and film deposition apparatus | |
US20110039026A1 (en) | Film deposition apparatus, film deposition method, and computer readable storage medium | |
KR101535682B1 (ko) | 활성화 가스 인젝터, 성막 장치 및 성막 방법 | |
TWI753523B (zh) | 高溫熱原子層沉積氮化矽膜 | |
US9279184B2 (en) | Method of forming a pattern and substrate processing system | |
KR20110074713A (ko) | 플라즈마 처리 장치 | |
US20070240644A1 (en) | Vertical plasma processing apparatus for semiconductor process | |
KR101147727B1 (ko) | 사이클릭 박막 증착 방법 | |
KR20180057528A (ko) | 성막 처리 방법 및 성막 처리 장치 | |
KR20150077560A (ko) | 사이클릭 박막 증착 방법 및 반도체 제조 방법, 그리고 반도체 소자 | |
JP5629829B2 (ja) | 半円形状のアンテナを備える基板処理装置 | |
TWI817555B (zh) | 處理腔室 | |
US20220028678A1 (en) | Thin film deposition process | |
KR20240003033A (ko) | 박막 증착 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140520 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140818 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140908 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20141006 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5629830 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |