JP2014503444A - ナノ結晶の沿面成長によるコロイド状ナノシートを作製する工程 - Google Patents
ナノ結晶の沿面成長によるコロイド状ナノシートを作製する工程 Download PDFInfo
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- JP2014503444A JP2014503444A JP2013534358A JP2013534358A JP2014503444A JP 2014503444 A JP2014503444 A JP 2014503444A JP 2013534358 A JP2013534358 A JP 2013534358A JP 2013534358 A JP2013534358 A JP 2013534358A JP 2014503444 A JP2014503444 A JP 2014503444A
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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Abstract
【選択図】図4
Description
・狭い蛍光スペクトル12
・ 短い蛍光寿命
・大きな吸着横断面
という結果として、1つの次元(厚さ)にわたってのみに閉じ込められて存在する。
・界面活性剤17
・ポリマー18
・チオール19
・アミン類20、21、22
・無機イオン類20、23
は、化学的な自然法則の広い範囲内にある。
・(PVP18、24、25、CTAB26、イオン類20、23を使用する)金属ナノプレート
・(オレイン酸またはオレイルアミンを使用する)希土類酸化物22、27
・(Cu2S19予備チオール類を使用する)硫黄化合物
とすることができる。
・第1の有機溶液であって、非配位性またはわずかに配位しており、合成溶媒として作用し、少なくとも1つの最初のコロイド状のナノ結晶を含む第1の有機溶液の調製のステップと、
・第2の有機溶液であって、M、X、および酢酸塩を含む第2の溶液の調製のステップと、
・ナノ結晶の成長のため、所定の温度にて、所定量の第1の溶液中に所定量の第2の溶液を所定の時間にわたってゆっくりとした導入するステップと、
を含む。
・第1の有機溶液であって、非配位性またはわずかに配位しており、合成溶媒として作用する第1の有機溶液の調製のステップと、
・M、X、および酢酸塩の前駆物質を含む第2の有機溶液の調製のステップと、
・ナノシートの形状の下における結晶質半導体の成長のため、所定の温度にて、所定量の第1の溶液中に所定の第2の溶液を所定の時間にわたってゆっくりと導入するステップと、
を含む。
本発明は、以下の実施例の論述により記述されるが、この記述は制限するものではない。
100mlの3つ首フラスコ中にて、10mlの1−オクタデセンを、前もって乳鉢内にて粉砕した40mgのCd(酢酸塩)2,2H2Oに導入した。この混合物を磁性的に撹拌し、かつ真空下で30分間脱気する。この反応媒体は、不活性雰囲気(アルゴン)下を通り、180℃にて加熱する。
100mlの3つ首フラスコ中にて、10mlの1−オクタデセンを前もって乳鉢内にて粉砕したCd(酢酸塩)2,2H2Oを導入し、参照12に記述される方法を通して10nmolのCdSeナノ結晶を合成する。この混合物を磁性的に撹拌し、かつ真空下にて30分間脱気する。この反応媒体は、不活性雰囲気(アルゴン)下により行われ、180℃にて加熱される。
100mlの3つ首フラスコ中にて、10mlの1−オクタデセンを、参照12に記述される方法を通して合成される10nmolのCdSeのナノ結晶に導入する。この混合物を磁性的に撹拌し、30分間真空下にて脱気する。この反応媒体は、不活性雰囲気(アルゴン)下にて行われ、240℃にて加熱される。
10mlのトルエンを、100mlの3つ首フラスコ中に導入する。このフラスコを100℃にて加熱し、5mlのトルエン、133mgのCd(酢酸塩)2,2H20、30mgの安息香酸および100μlの化学量論的TOPSeを含むシリンジが調製される。
100mlの3つ首フラスコにおいて、参照12に記述される方法により合成される10nmolのCdSeナノ結晶に10mlの1‐オクタデセンを導入する。この混合物を磁性的に撹拌し、かつ30分間脱気する。この反応雰囲気をアルゴンに切り替え、この溶液を240℃に温める。
Claims (29)
- 式MnXy(式中、Mが遷移金属であり、且つXがカルコゲンである。)で表される結晶質半導体物質の、少なくとも1つの最初のコロイド状ナノ結晶における、沿面成長によるコロイド状ナノシートの製造方法であって、
合成溶媒として使用され、少なくとも1つの最初のナノ結晶を含む、非配位性またはわずかに配位している第1の有機溶液の調製のステップと、
前駆物質MおよびXを含み、酢酸塩をさらに含む、第2の有機溶液の調製のステップと、
ナノシートの成長のため、所定の温度にて所定量の前記第1の溶液中に所定量の前記第2の溶液を所定の時間にわたってゆっくりと導入するステップ、を含む、コロイド状ナノシートの製造方法。 - 前記少なくとも1つの最初のコロイド状ナノ結晶は、CdO、CdS、CdSe、CdTe、ZnO、ZnS、ZnSe、ZnTe、PbO、PbS、PbSe、PbTe、HgS、HgSe、HgTe、CuInS2、CuInSe2、AgInS2、AgInSe2、CuS、Cu2S、Ag2S、Ag2Se、Ag2Te、FeS、FeS2、InP、Cd3P2、Zn3P2、FeO、Fe2O3、Fe3O4、Al2O3、TiO2およびそれらの合金から作製される、請求項1に記載の製造方法。
- 前記少なくとも1つの最初のコロイド状ナノ結晶は、少なくとも1つのコロイド状ナノシートである、請求項1または2に記載の製造方法。
- 前記成長した結晶物質MnXyは、CdO、CdS、CdSe、CdTe、ZnO、ZnS、ZnSe、ZnTe、PbO、PbS、PbSe、PbTe、HgS、HgSe、HgTe、CuInS2、CuInSe2、AgInS2、AgInSe2、CuS、Cu2S、Ag2S、Ag2Se、Ag2Te、FeS、FeS2、InP、Cd3P2、Zn3P2、FeO、Fe2O3、Fe3O4、Al2O3、TiO2およびそれらの合金の中から選択される化合物である、請求項1〜3の何れか1項に記載の製造方法。
- 前記半導体結晶物質MnXyは、遷移金属と共に添加される、請求項1〜4の何れか1項に記載の製造方法。
- 前記酢酸塩の一部は、前記第1の有機溶液中に導入される、請求項1〜5の何れか1項に記載の製造方法。
- 前記第1の有機溶液は、前もって行われたコロイド状ナノ結晶の合成に由来する粗反応混合物から作製される、請求項1〜6の何れか1項に記載の製造方法。
- 前記前駆物質Mは、Mのカルボン酸塩であり、具体的にはMの酢酸塩、Mのステアリン酸塩、Mのミリスチン酸塩またはMの安息香酸塩である、請求項1〜7の何れか1項に記載の製造方法。
- 前記前駆物質Mは、Mのホスホン酸塩である、請求項1〜7の何れか1項に記載の製造方法。
- 前記前駆物質Mは、Mのジチオカルバミド酸塩またはMのキサントゲン塩である、請求項1〜7の何れか1項に記載の製造方法。
- 前記前駆物質Xは、0.01Mから化学量論的比率までの濃度でホスフィン中に溶解したXを含む、請求項1〜10の何れか1項に記載の製造方法。
- 前記前駆物質Xは、0.01M〜0.2Mの範囲の濃度でアルセン(alcene)中に溶解したXである、請求項1〜11の何れか1項に記載の製造方法。
- 前記前駆物質Xは、非配位性またはわずかに配位している溶媒中に分散したXの微粉(100メッシュ)である、請求項1〜11の何れか1項に記載の製造方法。
- 前記第2の溶液にリガンドが添加されており、前記リガンドは、カルボン酸、アミン、チオール、ホスフィンまたはホスフィンオキシドであり得る、請求項1〜13の何れか1項に記載の製造方法。
- 前記温度Tは、20℃〜350℃の間である、請求項1〜14の何れか1項に記載の製造方法。
- 前記第2の溶液は、1時間よりも長い時間にわたって導入される、請求項1〜15の何れか1項に記載の製造方法。
- 前記酢酸塩は、細かく粉砕され、前記第2の溶液中に分散される、請求項1〜16の何れか1項に記載の製造方法。
- 前記酢酸塩は、適切な溶媒に分散される、請求項1〜16の何れか1項に記載の製造方法。
- 前記酢酸塩を溶解するために使用される前記溶媒は、水、エタノール、イソプロパノール、ジメチルスルホキシドの中から選択される、請求項1〜18の何れか1項に記載の製造方法。
- 前記第1の溶液は、1−オクタデセン、トリオクチルアミン、トルエンまたは安息香酸ベンジルの中から選択される、請求項1〜19の何れか1項に記載の製造方法。
- 前記ナノシートは、CdSeから作製されており、また前記塩酸塩は、カドミウム酢酸塩である、請求項1〜20の何れか1項に記載の製造方法により得られたコロイド状ナノシート。
- 前記ナノシートは、10nm超の沿面の大きさを有する、請求項1〜21の何れか1項に記載の製造方法により得られたコロイド状ナノシート。
- 前記ナノシートは、0.3nm〜100nmの厚さを有する、請求項1〜21の何れか1項に記載の製造方法により得られたコロイド状ナノシート。
- 前記ナノシートは、均一性の組成物を有する、請求項1〜21の何れか1項に記載の製造方法により得られたコロイド状ナノシート。
- 前記ナノシートは、均一性の組成物を有し、前記最初のナノ結晶は、前記MnXy成長物質と比較して異なる組成物を有する、請求項1〜21の何れか1項に記載の製造方法により得られたコロイド状ナノシート。
- 前記ナノシートは、大きな特定の範囲の触媒作用の物質として使用される、請求項1〜21の何れか1項に記載のコロイド状ナノシート。
- 請求項21〜25の何れか1項に記載の結晶性物質のいくつかを含む、発光ダイオード、トランジスタまたはレーザー構成要素用の活性要素。
- 請求項21〜25の何れか1項に記載の結晶性物質のいくつかを含む、太陽電池、具体的には吸収装置、および/または光生成電荷の集電器用の活性要素。
- 低温にて基板上に半導体の超薄膜を形成するための、請求項1〜20の何れか1項に記載の製造方法により得られた前記ナノ結晶物質の使用。
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US10490624B2 (en) | 2019-11-26 |
EP2633102A1 (fr) | 2013-09-04 |
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CN103415655B (zh) | 2017-04-12 |
CN103415655A (zh) | 2013-11-27 |
EP2633102B1 (fr) | 2020-09-16 |
KR20190078659A (ko) | 2019-07-04 |
WO2012056121A1 (fr) | 2012-05-03 |
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