JP2014210292A - Device for electron beam surface treatment, and method of electron beam surface treatment - Google Patents
Device for electron beam surface treatment, and method of electron beam surface treatment Download PDFInfo
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- JP2014210292A JP2014210292A JP2014167163A JP2014167163A JP2014210292A JP 2014210292 A JP2014210292 A JP 2014210292A JP 2014167163 A JP2014167163 A JP 2014167163A JP 2014167163 A JP2014167163 A JP 2014167163A JP 2014210292 A JP2014210292 A JP 2014210292A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K15/00—Electron-beam welding or cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K15/00—Electron-beam welding or cutting
- B23K15/02—Control circuits therefor
Abstract
Description
この発明は、電子ビームを用いて金属の表面処理を行う電子ビーム表面処理装置及び電子ビーム表面処理方法に関するものである。 The present invention relates to an electron beam surface treatment apparatus and an electron beam surface treatment method for performing metal surface treatment using an electron beam.
一般に、金型は切削加工機械や放電加工によって粗加工した後、表面の仕上げ加工が必要である。従来は、この仕上げ加工は熟練者による研磨で行われており、多大な時間とコストが必要となっていた。そこで、手作業によらずに被処理物の表面を平滑化するために、被処理物の表面の広い範囲にわたって電子ビームをパルス照射して表面処理を行うようにした技術（例えば、特許文献１参照）や、電子ビームを被処理物付近に焦点を合わせ、二次元走査して表面処理するようにした技術（例えば、特許文献２参照）がそれぞれ提案されている。 In general, a die must be subjected to surface finishing after rough machining by a cutting machine or electric discharge machining. Conventionally, this finishing process is performed by polishing by a skilled worker, and much time and cost are required. Therefore, in order to smooth the surface of the object to be processed without relying on manual work, a technique for performing surface treatment by irradiating an electron beam over a wide range of the surface of the object to be processed (for example, Patent Document 1). And a technique (for example, see Patent Document 2) in which an electron beam is focused on the vicinity of an object to be processed and surface-treated by two-dimensional scanning is proposed.
特許文献１に記載されている技術は、微細な表面粗さに仕上げることが可能であるが、広い面積にわたって電子ビームが照射されるため、表面層が溶融凝固した後に引っ張り残留応力が生じ易く、被処理物の表面に微細なクラックを生じる。また、被処理物の形状が複雑なものでは、その表面に均一に電子ビームを照射することができない。このため、表面粗さに局所的なむらを生じ易い。
特許文献２に記載されている技術では、被処理面の表面に焦点を合わせ、ビーム径がφ ０．０３ｍｍくらいで、電子ビームをデジタル的に微少量（例えば０．０１ｍｍ〜０．０５ｍｍ）ずつ予め設定された位置をデータ通りに動かし、二次元走査を行うため、複雑な形状であっても表面処理が行えるが、表面粗さが１μｍ程度までにしか改善されない。
被処理物の特性を改善する物質を被処理面に塗布し、電子ビームを照射して被処理面に一体化させ、特性を改善する処理を行う場合、従来の照射方法では照射後に塗布物質の存在に偏りが生じ、均一な表面特性を得られないという問題があった。
The technique described in Patent Document 1 can finish to a fine surface roughness, but since an electron beam is irradiated over a wide area, tensile residual stress is likely to occur after the surface layer is melted and solidified, Fine cracks are generated on the surface of the workpiece. Moreover, if the shape of the object to be processed is complicated, the surface cannot be irradiated with an electron beam uniformly. For this reason, local unevenness is likely to occur in the surface roughness.
In the technique described in Patent Document 2, the surface of the surface to be processed is focused, the beam diameter is about φ 0.03 mm, and the electron beam is digitally minutely (for example, 0.01 mm to 0.05 mm). Since the preset position is moved according to the data and two-dimensional scanning is performed, surface treatment can be performed even with a complicated shape, but the surface roughness can be improved only to about 1 μm.
When a material that improves the properties of the workpiece is applied to the surface to be processed, and is irradiated with an electron beam to be integrated with the surface to be processed, and the processing to improve the properties is performed, the conventional irradiation method uses a coating material after irradiation. There was a problem that the existence was uneven and uniform surface characteristics could not be obtained.
この発明は、上述のような課題を解決するためになされたものであり、被処理物の表面の溶融領域の湯流れを抑制し、微細な表面粗さに仕上げることができる電子ビーム表面処理装置及び電子ビーム表面処理方法を得ることを目的にしている。 The present invention has been made in order to solve the above-described problems, and suppresses the flow of molten metal in the molten region on the surface of the object to be processed, and can be finished to a fine surface roughness. And an electron beam surface treatment method.
この発明に係わる電子ビーム表面処理装置においては、被処理物に電子ビームを照射するための電子ビーム照射装置、この電子ビーム照射装置により照射された電子ビームを偏向させる偏向レンズを制御する偏向制御装置、及び電子ビーム照射装置を制御する制御装置を備え、制御装置及び偏向制御装置は、偏向レンズを制御し、電子ビームを、この電子ビームの進行方向に対し局所的に円の軌跡を描かせながら１本の線上を前進させ、被処理物の処理対象領域を電子ビームによって走査させるものである。 In the electron beam surface treatment apparatus according to the present invention, an electron beam irradiation apparatus for irradiating an object to be processed with an electron beam, and a deflection control apparatus for controlling a deflection lens that deflects the electron beam irradiated by the electron beam irradiation apparatus. And a control device for controlling the electron beam irradiation device, and the control device and the deflection control device control the deflection lens and draw the circular locus of the electron beam locally in the traveling direction of the electron beam. It advances on one line and scans the processing target area of the object to be processed by the electron beam.
この発明によれば、被処理物に電子ビームを照射するための電子ビーム照射装置、この電子ビーム照射装置により照射された電子ビームを偏向させる偏向レンズを制御する偏向制御装置、及び電子ビーム照射装置を制御する制御装置を備え、制御装置及び偏向制御装置は、偏向レンズを制御し、電子ビームを、この電子ビームの進行方向に対し局所的に円の軌跡を描かせながら１本の線上を前進させ、被処理物の処理対象領域を電子ビームによって走査させるので、処理対象領域内の溶融による湯流れを抑制することができ、平坦性を改善することができる。 According to the present invention, an electron beam irradiation apparatus for irradiating an object to be processed with an electron beam, a deflection control apparatus for controlling a deflection lens that deflects the electron beam irradiated by the electron beam irradiation apparatus, and an electron beam irradiation apparatus The control device and the deflection control device control the deflection lens and advance the electron beam on one line while drawing a circular locus locally with respect to the traveling direction of the electron beam. Since the region to be processed of the object to be processed is scanned with the electron beam, the flow of molten metal due to melting in the region to be processed can be suppressed, and the flatness can be improved.
実施の形態１．
図１は、この発明の実施の形態１による電子ビーム表面処理装置を示す構成図である。
図１において、電子ビーム表面処理装置１は、真空チャンバ２内に、被処理部Ｗを載置するＸＹＺテーブル４（テーブル）と、被処理部Ｗに向けて電子ビームを発生する電子銃８と、この電子銃８からの電子ビームを収束する収束レンズ９と、収束レンズ９によって収束された電子ビームを偏向する偏向レンズ１０とを有している。電子銃８と、収束レンズ９と、偏向レンズ１０は、電子ビーム照射装置３を構成する。
真空チャンバ２の外部には、真空排気装置５、電源装置６、および制御装置７が設けられている。真空排気装置５は、被処理物ＷをＸＹＺテーブル４上に載置した後、真空チャンバ２内が所定の真空度に達するまで真空引きを行う。制御装置７は、マイクロコンピュータ等から構成され、予め設定された制御プログラムに基づいて電子ビーム照射装置３、ＸＹＺテーブル４、真空排気装置５、および電源装置６の各動作を制御し、さらに、電子ビームが被処理物Ｗの表面の照射位置に常に焦点を結ぶように収束レンズ９を制御する。偏向制御装置１１は、偏向レンズ１０を制御する。
Embodiment 1 FIG.
FIG. 1 is a block diagram showing an electron beam surface treatment apparatus according to Embodiment 1 of the present invention.
In FIG. 1, an electron beam surface treatment apparatus 1 includes an XYZ table 4 (table) on which a processing target W is placed in a vacuum chamber 2, and an electron gun 8 that generates an electron beam toward the processing target W. And a converging lens 9 for converging the electron beam from the electron gun 8 and a deflecting lens 10 for deflecting the electron beam converged by the converging lens 9. The electron gun 8, the converging lens 9, and the deflection lens 10 constitute an electron beam irradiation device 3.
A vacuum exhaust device 5, a power supply device 6, and a control device 7 are provided outside the vacuum chamber 2. The vacuum evacuation device 5 evacuates the workpiece W after placing it on the XYZ table 4 until the inside of the vacuum chamber 2 reaches a predetermined degree of vacuum. The control device 7 is constituted by a microcomputer or the like, and controls each operation of the electron beam irradiation device 3, the XYZ table 4, the vacuum exhaust device 5, and the power supply device 6 based on a preset control program. The converging lens 9 is controlled so that the beam always focuses on the irradiation position on the surface of the workpiece W. The deflection control device 11 controls the deflection lens 10.
図２は、この発明の実施の形態１による電子ビーム表面処理装置の電子ビーム軌跡を示す説明図である。
図２において、偏向制御装置１１によって電子ビームを微小振動軌跡１２のように進行方向に対し前後に微小に振動させる。制御装置７の制御により、全体としての電子ビーム軌跡１３が被処理物Ｗに描かれる。
FIG. 2 is an explanatory diagram showing an electron beam trajectory of the electron beam surface treatment apparatus according to Embodiment 1 of the present invention.
In FIG. 2, the deflection control device 11 causes the electron beam to vibrate slightly back and forth with respect to the traveling direction as shown by a minute vibration locus 12. The electron beam trajectory 13 as a whole is drawn on the workpiece W under the control of the control device 7.
図３は、この発明の実施の形態１による電子ビーム表面処理装置の処理対象領域内の電子ビーム軌跡を示す説明図である。
図３において、被処理物Ｗの表面処理が必要な処理対象領域１４内を二次元走査された全体としての電子ビーム軌跡１３が示されている。
FIG. 3 is an explanatory diagram showing an electron beam trajectory in the processing target region of the electron beam surface processing apparatus according to Embodiment 1 of the present invention.
In FIG. 3, an electron beam trajectory 13 as a whole that is two-dimensionally scanned within the processing target region 14 that requires surface treatment of the workpiece W is shown.
次に、動作について説明する。
実施の形態１の電子ビーム表面処理装置１は、鋼等の鉄系金属、あるいはアルミニウム合金、チタン合金、超硬合金等の非鉄金属からなる被処理物Ｗの表面処理を行うものであって、真空チャンバ２内に電子ビーム照射装置３とＸＹＺテーブル４とが配置されている。
被処理物ＷをＸＹＺテーブル４上に載置した後、真空排気装置５により真空チャンバ２内が所定の真空度に達するまで真空引きを行う。真空チャンバ２内が所定の真空度に達すると、制御装置７は、ＸＹＺテーブル４を駆動して表面処理が必要とされる処理対象領域に電子ビームが照射可能な位置まで被処理物Ｗを移動させた後、電源装置６を起動して電子銃８から電子ビームを発生させる。
電子ビーム照射装置３は、被処理物Ｗの表面に電子ビームを照射するもので、電子ビームは収束レンズ９で収束された後、偏向レンズ１０で偏向されて被処理物Ｗの表面に照射される。
マイクロコンピュータ等から構成された制御装置７は、予め設定された制御プログラムに基づいて電子ビーム照射装置３、ＸＹＺテーブル４、真空排気装置５、電源装置６の各動作を制御するとともに、電子ビームが被処理物Ｗの表面の照射位置に常に焦点を結ぶように収束レンズ９を制御する。このとき、ビーム径は処理領域に対し十分小さい。
Next, the operation will be described.
The electron beam surface treatment apparatus 1 according to Embodiment 1 performs surface treatment of an object to be processed W made of a ferrous metal such as steel, or a non-ferrous metal such as an aluminum alloy, a titanium alloy, or a cemented carbide, An electron beam irradiation device 3 and an XYZ table 4 are arranged in the vacuum chamber 2.
After the workpiece W is placed on the XYZ table 4, vacuuming is performed by the vacuum exhaust device 5 until the inside of the vacuum chamber 2 reaches a predetermined degree of vacuum. When the inside of the vacuum chamber 2 reaches a predetermined degree of vacuum, the control device 7 drives the XYZ table 4 to move the workpiece W to a position where an electron beam can be irradiated to a processing target area where surface processing is required. Then, the power supply device 6 is activated to generate an electron beam from the electron gun 8.
The electron beam irradiation device 3 irradiates the surface of the workpiece W with the electron beam. The electron beam is converged by the converging lens 9, then deflected by the deflection lens 10 and irradiated on the surface of the workpiece W. The
The control device 7 constituted by a microcomputer or the like controls each operation of the electron beam irradiation device 3, the XYZ table 4, the vacuum exhaust device 5, and the power supply device 6 based on a preset control program, The converging lens 9 is controlled so that the irradiation position on the surface of the workpiece W is always focused. At this time, the beam diameter is sufficiently small with respect to the processing region.
次に、実施の形態１での電子ビーム照射方法を、図２、図３を用いて説明する。
図２に示すように、偏向制御装置１１によって電子ビームを、微小振動軌跡１２のように電子ビームの進行方向に対し、前後に微小に振動させながら、制御装置７と偏向制御装置１１により偏向レンズ１０を制御して、全体としての電子ビーム軌跡１３を描かせる。
この全体としての電子ビーム軌跡１３は、図３に示すように、被処理物Ｗの表面処理が必要な処理対象領域１４内を、溶融ムラが生じないように二次元走査することによって得られる。
このように、電子ビームを被処理物Ｗの処理対象領域内で走査の際、局所的に進行方向に対して振動しながら走査することで、走査の際に形成される溶融領域に対し、進行方向後方にも入熱が行われる。これにより、溶融領域内の温度場が均一、もしくは温度勾配が減少する。
溶融領域内の温度勾配が減少すると、溶融領域内で生じる対流や振動を低減させることができ、凝固後、表面の平坦性が改善され、一度の走査で０．５μｍ程度の微細な表面粗さに仕上げることができる。
Next, the electron beam irradiation method in Embodiment 1 is demonstrated using FIG. 2, FIG.
As shown in FIG. 2, the deflection control device 11 causes the electron beam to vibrate slightly back and forth with respect to the traveling direction of the electron beam as shown by a minute vibration trajectory 12, while the control device 7 and the deflection control device 11 use the deflection lens. 10 is controlled to draw the electron beam trajectory 13 as a whole.
As shown in FIG. 3, the entire electron beam trajectory 13 is obtained by two-dimensionally scanning the processing target region 14 that requires surface treatment of the workpiece W so as not to cause melting unevenness.
In this way, when the electron beam is scanned within the region to be processed of the workpiece W, the scanning is performed while locally vibrating in the traveling direction, so that the electron beam proceeds with respect to the melted region formed at the time of scanning. Heat is input also in the direction rear. Thereby, the temperature field in the melting region is uniform or the temperature gradient is reduced.
When the temperature gradient in the melting region decreases, convection and vibration generated in the melting region can be reduced, the surface flatness is improved after solidification, and a fine surface roughness of about 0.5 μm in one scan. Can be finished.
実施の形態１によれば、電子ビームを被処理物Ｗの処理対象領域内で走査する際、局所的に進行方向に対して前後に振動しながら走査することで、走査の際に形成される溶融領域に対し、進行方向後方にも入熱が行われることにより、溶融領域内の温度場が均一、もしくは温度勾配が減少し、溶融領域内で生じる対流や振動を低減させることができ、凝固後、表面の平坦性が改善され、一度の走査で０．５μｍ程度の微細な表面粗さに仕上げることができる。 According to the first embodiment, when the electron beam is scanned in the processing target region of the workpiece W, the scanning is performed while locally oscillating back and forth in the traveling direction. The heat input to the molten region is also performed in the rearward direction, so that the temperature field in the molten region is uniform or the temperature gradient is reduced, and the convection and vibration generated in the molten region can be reduced. Thereafter, the flatness of the surface is improved, and it is possible to finish the surface with a fine surface roughness of about 0.5 μm by a single scan.
実施の形態２．
実施の形態２は、実施の形態１において、偏向制御装置１１によって電子ビームを進行方向に対し前後に微小に振動させながら、制御装置７により、被処理物Ｗを載置したＸＹＺテーブル４を移動させることにより、全体としての電子ビーム軌跡１３を描くようにしたものである。このとき、ＸＹＺテーブル４と電子ビームの両方を制御して、全体としての電子ビーム軌跡１３を描くようにしてもよい。
Embodiment 2. FIG.
In the second embodiment, the XYZ table 4 on which the workpiece W is placed is moved by the controller 7 while the electron beam is vibrated minutely back and forth with respect to the traveling direction by the deflection controller 11 in the first embodiment. By doing so, the electron beam trajectory 13 as a whole is drawn. At this time, the electron beam trajectory 13 as a whole may be drawn by controlling both the XYZ table 4 and the electron beam.
実施の形態３．
図４は、この発明の実施の形態３による電子ビーム表面処理装置の電子ビーム軌跡を示す説明図である。
図４において、偏向制御装置１１によってビームを被処理物Ｗの表面上に、局所的に円の軌跡１５を繰り返し描くように走査する。この状態で電子ビームと被処理物Ｗとを相対的に移動させると、局部的には円の軌跡１５を繰り返し描くような電子ビーム軌跡１６が得られる。全体としては一方向に走査する電子ビーム軌跡１７となる。
Embodiment 3 FIG.
FIG. 4 is an explanatory view showing an electron beam locus of an electron beam surface treatment apparatus according to Embodiment 3 of the present invention.
In FIG. 4, the deflection control device 11 scans the beam on the surface of the workpiece W so as to repeatedly draw a circular locus 15 locally. When the electron beam and the workpiece W are relatively moved in this state, an electron beam trajectory 16 that locally draws a circular trajectory 15 is obtained. As a whole, the electron beam locus 17 is scanned in one direction.
実施の形態３は、実施の形態１の図１のような構成で、電子ビームの走査を次のような走査方法にする。
偏向制御装置１１によってビームを被処理物Ｗの表面上に、局所的に円の軌跡１５を繰り返し描くように走査する。この状態で、偏向レンズ１０を制御することにより、局部的には円の軌跡１５を繰り返し描くような電子ビーム軌跡１６となり、全体としては一方向に走査する電子ビーム軌跡１７を描かせる。
この全体としての電子ビーム軌跡１７は、図３に示すように、被処理物Ｗの表面処理が必要な処理対象領域１４内において溶融ムラが生じないように二次元走査することで得られる。
このように、電子ビームを被処理物Ｗの処理対象領域１４内で走査の際、局所的に円の軌跡を繰り返し描くように走査することで、走査の際に形成される溶融領域に対し、進行方向後方にも入熱が行われる。これにより、溶融領域内の温度場が均一、もしくは温度勾配が減少する。溶融領域内の温度勾配が減少すると、溶融領域内で生じる対流や振動を低減させることができ、凝固後、表面の平坦性が改善され、一度の走査で０．５μｍ程度の微細な表面粗さに仕上げることができる。
The third embodiment is configured as shown in FIG. 1 of the first embodiment, and the electron beam scanning is performed as follows.
The deflection controller 11 scans the beam on the surface of the workpiece W so as to repeatedly draw a circular locus 15 locally. By controlling the deflecting lens 10 in this state, an electron beam locus 16 that locally draws a circular locus 15 is obtained, and an electron beam locus 17 that scans in one direction as a whole is drawn.
As shown in FIG. 3, the entire electron beam trajectory 17 is obtained by two-dimensional scanning so as not to cause melting unevenness in the processing target region 14 that requires surface treatment of the workpiece W.
As described above, when scanning the electron beam in the processing target region 14 of the workpiece W so as to repeatedly draw the locus of a circle locally, the molten region formed at the time of scanning is Heat input is also performed at the rear in the direction of travel. Thereby, the temperature field in the melting region is uniform or the temperature gradient is reduced. When the temperature gradient in the melting region decreases, convection and vibration generated in the melting region can be reduced, the surface flatness is improved after solidification, and a fine surface roughness of about 0.5 μm in one scan. Can be finished.
実施の形態３によれば、電子ビームを被処理物Ｗの処理対象領域１４内で走査の際、局所的に円の軌跡を繰り返し描くように走査することで、走査の際に形成される溶融領域に対し、進行方向後方にも入熱が行われることにより、溶融領域内の温度場が均一、もしくは温度勾配が減少し、溶融領域内で生じる対流や振動を低減させることができ、凝固後、表面の平坦性が改善され、一度の走査で０．５μｍ程度の微細な表面粗さに仕上げることができる。 According to the third embodiment, when the electron beam is scanned in the processing target region 14 of the workpiece W, the scanning is performed so as to repeatedly draw the locus of a circle locally. The heat input is also applied to the rear of the region in the direction of travel, so that the temperature field in the melting region is uniform or the temperature gradient is reduced, and convection and vibration generated in the melting region can be reduced. The surface flatness is improved, and it is possible to finish the surface with a fine surface roughness of about 0.5 μm by a single scan.
実施の形態４．
実施の形態４は、実施の形態３において、偏向制御装置１１によって局部的には円の軌跡１５を繰り返し描きながら、制御装置７により、被処理物Ｗを載置したＸＹＺテーブル４を移動させることにより、全体としての電子ビーム軌跡１７を描くようにしたものである。このとき、ＸＹＺテーブル４と電子ビームの両方を制御して、全体としての電子ビーム軌跡１７を描くようにしてもよい。
Embodiment 4 FIG.
In the fourth embodiment, the XYZ table 4 on which the workpiece W is placed is moved by the control device 7 while repeatedly drawing the locus 15 of the circle locally by the deflection control device 11 in the third embodiment. Thus, the electron beam trajectory 17 as a whole is drawn. At this time, the electron beam locus 17 as a whole may be drawn by controlling both the XYZ table 4 and the electron beam.
実施の形態５．
実施の形態５では、被処理面の特性を改善する物質を被処理面上に均一に塗布する（第一の工程）。塗布する厚みは被処理面への入熱が妨げられないように５０μｍ以下が好ましい。被処理面への塗布後、実施の形態１〜実施の形態４に示した照射方法による電子ビーム照射を行う（第二の工程）。このとき、電子ビームの出力を制御することで、塗布物質の一部を昇華させ、残留する塗布物質量を調節することができる。
一般に、塗布物資は、被処理面が溶融すると溶融領域に入り込み、そのまま凝固することで一体化する。このとき、溶融領域に湯流れが生じると、塗布物質は溶融物に流され、残留時に偏りが生じる。これにより、特性にばらつきが生じ、さらに表面粗さの悪化も起きる。
これに対して、実施の形態１〜実施の形態４の電子ビーム照射方法では、溶融領域の湯流れを抑制できるため、均一に塗布されていれば、処理後も偏りなく均一に塗布物質が残留する。これにより、良好な特性、微細な表面粗さを得ることができる。
Embodiment 5. FIG.
In the fifth embodiment, a substance that improves the characteristics of the surface to be processed is uniformly applied on the surface to be processed (first step). The thickness to be applied is preferably 50 μm or less so that heat input to the surface to be treated is not hindered. After application to the surface to be processed, electron beam irradiation is performed by the irradiation method described in the first to fourth embodiments (second step). At this time, by controlling the output of the electron beam, a part of the coating substance can be sublimated and the amount of the remaining coating substance can be adjusted.
Generally, the coated material enters the melted region when the surface to be treated is melted, and is integrated by solidifying as it is. At this time, if a hot water flow is generated in the melting region, the coating substance is caused to flow into the melt, and deviation occurs when remaining. As a result, variations in characteristics occur, and surface roughness also deteriorates.
On the other hand, in the electron beam irradiation method according to the first to fourth embodiments, the flow of molten metal in the molten region can be suppressed. Therefore, if the coating is uniformly applied, the applied substance remains evenly even after processing. To do. Thereby, good characteristics and fine surface roughness can be obtained.
実施の形態５によれば、被処理面の特性を改善する物質を塗布した上で、電子ビーム照射を行うので、この物質を被処理面に偏りなく均一に一体化させ、表面特性を改善することができる。 According to the fifth embodiment, since the material for improving the characteristics of the surface to be processed is applied and then irradiated with the electron beam, the material is uniformly integrated with the surface to be processed without unevenness to improve the surface characteristics. be able to.
なお、本発明は、その発明の範囲内において、各実施の形態を自由に組み合わせたり、各実施の形態を適宜、変形、省略することが可能である。 It should be noted that the present invention can be freely combined with each other within the scope of the invention, and each embodiment can be appropriately modified or omitted.
１ 電子ビーム表面処理装置、２ 真空チャンバ、３ 電子ビーム照射装置、
４ ＸＹＺテーブル、５ 真空排気装置、６ 電源装置、７ 制御装置、８ 電子銃、
９ 収束レンズ、１０ 偏向レンズ、１１ 偏向制御装置、１２ 微小振動軌跡、
１３ 全体としての電子ビーム軌跡、１４ 処理対象領域、１５ 円の軌跡、
１６ 電子ビーム軌跡、１７ 全体としての電子ビーム軌跡。
1 electron beam surface treatment device, 2 vacuum chamber, 3 electron beam irradiation device,
4 XYZ table, 5 vacuum exhaust device, 6 power supply device, 7 control device, 8 electron gun,
9 Converging lens, 10 Deflection lens, 11 Deflection control device, 12 Micro vibration locus,
13 Electron beam trajectory as a whole, 14 target region, 15 circle trajectory,
16 Electron beam trajectory, 17 Electron beam trajectory as a whole.
Claims (4)
この電子ビーム照射装置により照射された電子ビームを偏向させる偏向レンズを制御する偏向制御装置、
及び上記電子ビーム照射装置を制御する制御装置を備え、
上記制御装置及び上記偏向制御装置は、上記偏向レンズを制御し、上記電子ビームを、この電子ビームの進行方向に対し局所的に円の軌跡を描かせながら１本の線上を前進させ、上記被処理物の処理対象領域を上記電子ビームによって走査させることを特徴とする電子ビーム表面処理装置。 An electron beam irradiation apparatus for irradiating an object with an electron beam,
A deflection control device that controls a deflection lens that deflects the electron beam irradiated by the electron beam irradiation device;
And a control device for controlling the electron beam irradiation device,
The control device and the deflection control device control the deflection lens to advance the electron beam on one line while drawing a circular locus locally with respect to the traveling direction of the electron beam. An electron beam surface treatment apparatus that scans a region to be treated of a workpiece with the electron beam.
この電子ビーム照射装置により照射された電子ビームを偏向させる偏向レンズを制御する偏向制御装置、
及び上記電子ビーム照射装置を制御する制御装置を備え、
上記制御装置及び上記偏向制御装置は、上記偏向レンズを制御し、上記電子ビームを、この電子ビームの進行方向に対し局所的に円の軌跡を描き全体としては一方向に進む連続した軌跡を描かせながら前進させ、上記被処理物の処理対象領域を上記電子ビームによって走査させることを特徴とする電子ビーム表面処理装置。 An electron beam irradiation apparatus for irradiating an object with an electron beam,
A deflection control device that controls a deflection lens that deflects the electron beam irradiated by the electron beam irradiation device;
And a control device for controlling the electron beam irradiation device,
The control device and the deflection control device control the deflection lens, and draw a continuous locus in which the electron beam locally draws a circular locus in the traveling direction of the electron beam and travels in one direction as a whole. An electron beam surface treatment apparatus characterized by causing the electron beam to scan the region to be processed of the object to be processed.
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Citations (4)
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| JPS54142147A (en) * | 1978-04-28 | 1979-11-06 | Hitachi Ltd | Electron beam concentration controller |
| JPS62214142A (en) * | 1986-03-14 | 1987-09-19 | Hitachi Zosen Corp | Production of aluminum alloy substrate of high cleanliness for magnetic disk |
| JPH05261565A (en) * | 1992-03-13 | 1993-10-12 | Mitsubishi Electric Corp | Working method using electron beam |
| JPH09216075A (en) * | 1996-02-06 | 1997-08-19 | Aisin Aw Co Ltd | Surface finishing method of metallic member and metallic member obtained thereby |
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2014
- 2014-08-20 JP JP2014167163A patent/JP2014210292A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54142147A (en) * | 1978-04-28 | 1979-11-06 | Hitachi Ltd | Electron beam concentration controller |
| JPS62214142A (en) * | 1986-03-14 | 1987-09-19 | Hitachi Zosen Corp | Production of aluminum alloy substrate of high cleanliness for magnetic disk |
| JPH05261565A (en) * | 1992-03-13 | 1993-10-12 | Mitsubishi Electric Corp | Working method using electron beam |
| JPH09216075A (en) * | 1996-02-06 | 1997-08-19 | Aisin Aw Co Ltd | Surface finishing method of metallic member and metallic member obtained thereby |
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