JP2014209600A - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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JP2014209600A
JP2014209600A JP2014059488A JP2014059488A JP2014209600A JP 2014209600 A JP2014209600 A JP 2014209600A JP 2014059488 A JP2014059488 A JP 2014059488A JP 2014059488 A JP2014059488 A JP 2014059488A JP 2014209600 A JP2014209600 A JP 2014209600A
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substrate
processing liquid
temperature
processing
liquid
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裕次 長嶋
Yuji Nagashima
裕次 長嶋
崇 大田垣
Takashi Otagaki
崇 大田垣
林　航之介
Konosuke Hayashi
航之介 林
邦浩 宮崎
Kunihiro Miyazaki
邦浩 宮崎
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Shibaura Mechatronics Corp
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Shibaura Mechatronics Corp
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Priority to JP2014059488A priority Critical patent/JP2014209600A/en
Priority to PCT/JP2014/058239 priority patent/WO2014157179A1/en
Priority to TW103111251A priority patent/TW201511118A/en
Publication of JP2014209600A publication Critical patent/JP2014209600A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method capable of achieving improvement in substrate processing efficiency and suppression of the amount of processing liquid used.SOLUTION: A substrate processing apparatus 1 according to an embodiment comprises: a processing liquid supply unit 6 for supplying a processing liquid to a surface of a substrate W; and a heating unit 8 for heating the substrate W by irradiating the surface of the substrate W with light which is absorbed by the substrate W and passes through the processing liquid. Thus, the surface of the substrate W is irradiated with the light which is absorbed by the substrate W and passes through the processing liquid, to heat the substrate W, thereby achieving improvement in substrate processing efficiency and suppression of the amount of processing liquid used.

Description

本発明の実施形態は、基板処理装置及び基板処理方法に関する。   Embodiments described herein relate generally to a substrate processing apparatus and a substrate processing method.

基板処理装置は、半導体や液晶パネルなどの製造工程において、ウェーハや液晶基板などの基板の表面に処理液（例えば、レジスト剥離液や洗浄液など）を供給して基板表面を処理する装置である。この基板処理装置による処理液の供給では、基板処理効率の向上のため、処理液を予め加熱し、その処理液の性質や熱量を利用して基板表面を処理する基板処理が提案されている（例えば、特許文献１参照）。   A substrate processing apparatus is an apparatus for processing a substrate surface by supplying a processing liquid (for example, a resist stripping solution or a cleaning liquid) to the surface of a substrate such as a wafer or a liquid crystal substrate in a manufacturing process of a semiconductor or a liquid crystal panel. In the supply of the processing liquid by this substrate processing apparatus, in order to improve the substrate processing efficiency, a substrate processing is proposed in which the processing liquid is heated in advance and the surface of the substrate is processed using the properties and heat quantity of the processing liquid ( For example, see Patent Document 1).

ここで、前述の加熱による処理液の最終温度、すなわち基板処理効率が向上するために必要となる液温は処理液の種類によって異なるが、例えば、処理液としてＳＰＭ（硫酸及び過酸化水素水の混合液）を用いる場合には、その液温が８０℃程度になるまでＳＰＭを加熱し、その後、基板表面に供給することになる。   Here, the final temperature of the processing liquid by the heating described above, that is, the liquid temperature required for improving the substrate processing efficiency varies depending on the type of the processing liquid. For example, SPM (sulfuric acid and hydrogen peroxide solution) is used as the processing liquid. When the liquid mixture is used, the SPM is heated until the liquid temperature reaches about 80 ° C., and then supplied to the substrate surface.

特開２００７−８８３８１号公報JP 2007-88381 A

しかしながら、予め加熱した処理液を基板表面に供給しても、その処理液の温度は基板及びその周辺雰囲気の温度（いずれの温度も室温程度）の影響を受けて低下してしまう。つまり、処理液の熱量は基板やその周辺雰囲気により奪われ、処理液の温度が低くなるため、基板処理効率が低下することになってしまう。また、予め加熱した処理液は配管などを通って基板の表面に供給されるため、その間に処理液の温度は低くなり、やはり基板処理効率が低下してしまう。   However, even if a preheated processing liquid is supplied to the substrate surface, the temperature of the processing liquid is affected by the temperature of the substrate and the surrounding atmosphere (both temperatures are about room temperature). That is, the amount of heat of the processing liquid is deprived by the substrate and the surrounding atmosphere, and the temperature of the processing liquid is lowered, so that the substrate processing efficiency is lowered. In addition, since the preheated processing liquid is supplied to the surface of the substrate through a pipe or the like, the temperature of the processing liquid is lowered during that time, and the substrate processing efficiency is also lowered.

ここで、予め加熱した処理液を基板に供給し続ければ、基板及びその周辺雰囲気の温度も徐々に上昇していくが、このためには処理液を長時間供給し続ける必要があるので、処理液を大量に使用することになってしまう。   Here, if the preheated processing liquid is continuously supplied to the substrate, the temperature of the substrate and the surrounding atmosphere gradually rises. For this purpose, the processing liquid needs to be supplied for a long time, A large amount of liquid will be used.

本発明が解決しようとする課題は、基板処理効率の向上及び処理液使用量の抑止を実現することができる基板処理装置及び基板処理方法を提供することである。   The problem to be solved by the present invention is to provide a substrate processing apparatus and a substrate processing method capable of realizing improvement in substrate processing efficiency and suppression of the amount of processing liquid used.

実施形態に係る基板処理装置は、基板の表面に処理液を供給する処理液供給部と、基板の表面に、基板により吸収され処理液を透過する光を照射して基板を加熱する加熱部とを備える。   The substrate processing apparatus according to the embodiment includes a processing liquid supply unit that supplies a processing liquid to the surface of the substrate, a heating unit that irradiates the surface of the substrate with light that is absorbed by the substrate and passes through the processing liquid, and heats the substrate. Is provided.

実施形態に係る基板処理方法は、基板の表面に処理液を供給する工程と、基板の表面に、基板により吸収され処理液を透過する光を照射して基板を加熱する工程とを有する。   The substrate processing method according to the embodiment includes a step of supplying a processing liquid to the surface of the substrate and a step of heating the substrate by irradiating the surface of the substrate with light absorbed by the substrate and passing through the processing liquid.

本発明によれば、基板処理効率の向上及び処理液使用量の抑止を実現することができる。   According to the present invention, it is possible to improve the substrate processing efficiency and suppress the amount of processing liquid used.

第１の実施形態に係る基板処理装置の概略構成を示す図である。It is a figure which shows schematic structure of the substrate processing apparatus which concerns on 1st Embodiment. 第１の実施形態に係る基板処理工程の流れを示すフローチャートである。It is a flowchart which shows the flow of the substrate processing process which concerns on 1st Embodiment. 第２の実施形態に係る基板処理装置の概略構成を示す図である。It is a figure which shows schematic structure of the substrate processing apparatus which concerns on 2nd Embodiment.

（第１の実施形態）
第１の実施形態について図１及び図２を参照して説明する。 (First embodiment)
A first embodiment will be described with reference to FIGS. 1 and 2.

図１に示すように、第１の実施形態に係る基板処理装置１は、処理室となる処理ボックス２と、その処理ボックス２内に設けられたカップ３と、そのカップ３内で基板Ｗを水平状態で支持するテーブル４と、そのテーブル４を水平面内で回転させる回転機構５とを備えている。さらに、基板処理装置１は、テーブル４上の基板Ｗの表面に第１の処理液を供給する第１の処理液供給部６と、テーブル４上の基板Ｗの表面に第２の処理液を供給する第２の処理液供給部７と、テーブル４上の基板Ｗを加熱する加熱部８と、その加熱部８を移動させる移動機構９と、基板Ｗの温度を検出する複数の温度検出部１０と、各部を制御する制御部１１とを備えている。   As shown in FIG. 1, the substrate processing apparatus 1 according to the first embodiment includes a processing box 2 serving as a processing chamber, a cup 3 provided in the processing box 2, and a substrate W in the cup 3. A table 4 that is supported in a horizontal state and a rotating mechanism 5 that rotates the table 4 in a horizontal plane are provided. Furthermore, the substrate processing apparatus 1 includes a first processing liquid supply unit 6 that supplies a first processing liquid to the surface of the substrate W on the table 4, and a second processing liquid on the surface of the substrate W on the table 4. A second processing liquid supply unit 7 to be supplied, a heating unit 8 that heats the substrate W on the table 4, a moving mechanism 9 that moves the heating unit 8, and a plurality of temperature detection units that detect the temperature of the substrate W 10 and a control unit 11 for controlling each unit.

カップ３は、円筒形状に形成されており、テーブル４を周囲から囲んで内部に収容する。カップ３の周壁の上部は径方向の内側に向かって傾斜しており、テーブル４上の基板Ｗが露出するように開口している。このカップ３は、回転する基板Ｗ上から流れ落ちたあるいは飛散した処理液を受け取る。なお、カップ３の底部には、受け取った処理液を排出するための排出管（図示せず）が設けられている。   The cup 3 is formed in a cylindrical shape, and encloses the table 4 from the periphery and accommodates it inside. The upper part of the peripheral wall of the cup 3 is inclined toward the inside in the radial direction, and is opened so that the substrate W on the table 4 is exposed. The cup 3 receives the processing liquid that has flowed down or scattered from the rotating substrate W. A discharge pipe (not shown) for discharging the received processing liquid is provided at the bottom of the cup 3.

テーブル４は、カップ３内の中央付近に位置付けられ、水平面内で回転可能に設けられている。このテーブル４は、ピンなどの支持部材４ａを複数有しており、これらの支持部材４ａにより、ウェーハや液晶基板などの基板Ｗを着脱可能に保持する。   The table 4 is positioned near the center in the cup 3 and is provided so as to be rotatable in a horizontal plane. The table 4 has a plurality of support members 4a such as pins, and these support members 4a hold a substrate W such as a wafer or a liquid crystal substrate in a detachable manner.

回転機構５は、テーブル４に連結された回転軸やその回転軸を回転させる駆動源となるモータ（いずれも図示せず）などを有しており、モータの駆動により回転軸を介してテーブル４を回転させる。この回転機構５は制御部１１に電気的に接続されており、その駆動が制御部１１により制御される。   The rotating mechanism 5 includes a rotating shaft coupled to the table 4 and a motor (none of which is shown) serving as a driving source for rotating the rotating shaft, and the table 4 is driven by the motor via the rotating shaft. Rotate. The rotation mechanism 5 is electrically connected to the control unit 11, and the driving thereof is controlled by the control unit 11.

第１の処理液供給部６は、テーブル４上の基板Ｗの表面に対して斜め方向から第１の処理液を吐出するノズル６ａを有しており、このノズル６ａからテーブル４上の基板Ｗの表面に第１の処理液、例えばレジスト剥離処理用の硫酸溶液（過硫酸を含む硫酸溶液）を供給する。ノズル６ａはカップ３の周壁の上部に装着されており、その角度や吐出流速などは基板Ｗの表面中心付近に第１の処理液が供給されるように調整されている。この第１の処理液供給部６は制御部１１に電気的に接続されており、その駆動が制御部１１により制御される。なお、第１の処理液供給部６は、第１の処理液を貯留するタンクや駆動源となるポンプ、供給量を調整する調整弁となるバルブ（いずれも図示せず）などを備えている。   The first processing liquid supply unit 6 includes a nozzle 6 a that discharges the first processing liquid from an oblique direction with respect to the surface of the substrate W on the table 4, and the substrate W on the table 4 from the nozzle 6 a. A first treatment liquid, for example, a sulfuric acid solution for removing the resist (a sulfuric acid solution containing persulfuric acid) is supplied to the surface of the substrate. The nozzle 6 a is mounted on the upper part of the peripheral wall of the cup 3, and its angle and discharge flow rate are adjusted so that the first processing liquid is supplied near the center of the surface of the substrate W. The first processing liquid supply unit 6 is electrically connected to the control unit 11, and the driving thereof is controlled by the control unit 11. The first processing liquid supply unit 6 includes a tank that stores the first processing liquid, a pump that is a driving source, a valve that is an adjustment valve that adjusts the supply amount (none of which are shown), and the like. .

ここで、第１の処理液としては、硫酸溶液以外にも、例えば、オゾンや過酸化水素や次亜塩素酸、亜塩素酸、塩素酸、過塩素酸、ペルオキソ一硫酸、ペルオキソ二硫酸などを含む酸化性溶液を用いることが可能である。   Here, as the first treatment liquid, in addition to the sulfuric acid solution, for example, ozone, hydrogen peroxide, hypochlorous acid, chlorous acid, chloric acid, perchloric acid, peroxomonosulfuric acid, peroxodisulfuric acid, etc. It is possible to use an oxidizing solution containing.

第２の処理液供給部７は、テーブル４上の基板Ｗの表面に対して斜め方向から第２の処理液を吐出するノズル７ａを有しており、このノズル７ａからテーブル４上の基板Ｗの表面に第２の処理液、例えば洗浄処理用の純水（超純水）を供給する。ノズル７ａはカップ３の周壁の上部に装着されており、その角度や吐出流速などは基板Ｗの表面中心付近に第２の処理液が供給されるように調整されている。この第２の処理液供給部７は制御部１１に電気的に接続されており、その駆動が制御部１１により制御される。なお、第２の処理液供給部７は、第２の処理液を貯留するタンクや駆動源となるポンプ、供給量を調整する調整弁となるバルブ（いずれも図示せず）などを備えている。   The second processing liquid supply unit 7 includes a nozzle 7 a that discharges the second processing liquid from an oblique direction with respect to the surface of the substrate W on the table 4, and the substrate W on the table 4 from the nozzle 7 a. A second treatment liquid, for example, pure water for cleaning treatment (ultra pure water) is supplied to the surface of the substrate. The nozzle 7 a is mounted on the upper part of the peripheral wall of the cup 3, and its angle and discharge flow rate are adjusted so that the second processing liquid is supplied near the center of the surface of the substrate W. The second processing liquid supply unit 7 is electrically connected to the control unit 11, and its driving is controlled by the control unit 11. The second processing liquid supply unit 7 includes a tank that stores the second processing liquid, a pump that serves as a drive source, a valve that serves as an adjustment valve that adjusts the supply amount (none of which are shown), and the like. .

加熱部８は、複数のランプ８ａを有しており、テーブル４の上方に設けられ、各ランプ８ａの点灯によりテーブル４上の基板Ｗの表面に光を照射する。この加熱部８は移動機構９により上下方向（昇降方向）に移動可能に構成されており、カップ３に近接した照射位置（図１中の実線で示すように、基板Ｗの表面に近接した位置）とカップ３から所定距離だけ離間した待機位置（図１中の一点鎖線で示すように、基板Ｗの表面から離間した位置）とに移動する。加熱部８は制御部１１に電気的に接続されており、その駆動が制御部１１により制御される。   The heating unit 8 includes a plurality of lamps 8a, is provided above the table 4, and irradiates the surface of the substrate W on the table 4 with light when each lamp 8a is turned on. The heating unit 8 is configured to be movable in the vertical direction (lifting direction) by the moving mechanism 9, and the irradiation position close to the cup 3 (position close to the surface of the substrate W as shown by the solid line in FIG. 1). ) And a standby position separated from the cup 3 by a predetermined distance (position separated from the surface of the substrate W as indicated by a one-dot chain line in FIG. 1). The heating unit 8 is electrically connected to the control unit 11, and its driving is controlled by the control unit 11.

ここで、加熱部８としては、例えば、直管タイプのランプ８ａを複数本並列に設けたものや電球タイプのランプ８ａを複数個アレイ状に設けたもの、あるいは、ヒータプレートなどを用いることが可能である。また、ランプ８ａとしては、例えば、ハロゲンランプやキセノンフラッシュランプなどを用いることが可能である。   Here, as the heating unit 8, for example, a straight tube type lamp 8a provided in parallel, a plurality of light bulb type lamps 8a provided in an array, or a heater plate may be used. Is possible. As the lamp 8a, for example, a halogen lamp or a xenon flash lamp can be used.

各ランプ８ａは、基板Ｗにより吸収され処理液を透過する波長の光を照射する。この光は、基板Ｗにより吸収されるが、処理液によって熱吸収されずにその処理液を透過するような波長を有している。このような光の照射によって、処理液が基板Ｗに供給されるまで、その基板Ｗだけが加熱されるが、処理液が基板Ｗに供給された後においても、基板Ｗだけが加熱される。   Each lamp 8a emits light having a wavelength that is absorbed by the substrate W and passes through the processing liquid. This light is absorbed by the substrate W, but has a wavelength that allows the treatment liquid to pass through without being absorbed by the treatment liquid. By such light irradiation, only the substrate W is heated until the processing liquid is supplied to the substrate W, but even after the processing liquid is supplied to the substrate W, only the substrate W is heated.

移動機構９は、加熱部８を保持する保持部やその保持部を昇降方向に移動させる機構、駆動源となるモータ（いずれも図示せず）などを有しており、モータの駆動により保持部と共に加熱部８を移動させる。この移動機構９は制御部１１に電気的に接続されており、その駆動が制御部１１により制御される。   The moving mechanism 9 includes a holding unit that holds the heating unit 8, a mechanism that moves the holding unit in the up-and-down direction, a motor (not shown) that serves as a driving source, and the like. At the same time, the heating unit 8 is moved. The moving mechanism 9 is electrically connected to the control unit 11, and its driving is controlled by the control unit 11.

各温度検出部１０は、テーブル４上の各支持部材４ａにより支持されている基板Ｗとテーブル４との間にそのテーブル４の回転と一緒に回転しないように（テーブル４とは切り離されている状態で）保持部材１０ａにより保持されており、テーブル４上の各支持部材４ａにより支持されている基板Ｗの温度をそれぞれ検出する。これらの温度検出部１０は制御部１１に電気的に接続されており、検出した基板温度を制御部１１に基板温度情報としてそれぞれ送信する。なお、各温度検出部１０としては、例えば、放射温度計などを用いることが可能である。   Each temperature detection unit 10 is separated from the table 4 between the substrate W supported by each support member 4a on the table 4 and the table 4 so as not to rotate together with the rotation of the table 4 (separated from the table 4). The temperature of the substrate W held by the holding member 10a and supported by the supporting members 4a on the table 4 is detected. These temperature detection units 10 are electrically connected to the control unit 11 and transmit the detected substrate temperature to the control unit 11 as substrate temperature information. In addition, as each temperature detection part 10, it is possible to use a radiation thermometer etc., for example.

ここで、各温度検出部１０の一つ目は各支持部材４ａ上の基板Ｗの裏面の中心付近の温度を検出する位置に設けられており、二つ目は各支持部４ａ上の基板Ｗの裏面における半径中央付近の温度を検出する位置に設けられている。また、三つ目は各支持部４ａ上の基板Ｗの裏面の周縁付近の温度を検出する位置に設けられている。なお、図１では、温度検出部１０の個数は三個となっているが、この個数は例示であり、特に限定されるものではない。   Here, the first of each temperature detection unit 10 is provided at a position for detecting the temperature near the center of the back surface of the substrate W on each support member 4a, and the second is the substrate W on each support unit 4a. It is provided at a position for detecting the temperature near the center of the radius on the back surface of. The third one is provided at a position for detecting the temperature near the periphery of the back surface of the substrate W on each support portion 4a. In FIG. 1, the number of temperature detection units 10 is three, but this number is an example and is not particularly limited.

また、各温度検出部１０は、テーブル４上の基板Ｗの表面に沿って半径方向に延びる一直線上に配置されている。ただし、これらの温度検出部１０の配置は一直線上に限るものではなく、例えば、その一直線を跨ぐように交互に配置されていても良く、基板Ｗの表面において直径が異なる三つの円の円周上にそれぞれ配置されていれば良い。   Each temperature detection unit 10 is arranged on a straight line extending in the radial direction along the surface of the substrate W on the table 4. However, the arrangement of the temperature detection units 10 is not limited to a straight line, and for example, may be alternately arranged so as to cross the straight line, and the circumference of three circles having different diameters on the surface of the substrate W It only has to be arranged on each.

なお、各温度検出部１０はテーブル４と共に回転しないように構成されているが、これに限るものではなく、テーブル４と共に回転するように設けられても良い。この場合には、各温度検出部１０は、支持部４上の基板Ｗの表面に沿って半径方向に延びる一直線上に配置される。   Each temperature detection unit 10 is configured not to rotate with the table 4, but is not limited thereto, and may be provided to rotate with the table 4. In this case, each temperature detection unit 10 is arranged on a straight line extending in the radial direction along the surface of the substrate W on the support unit 4.

制御部１１は、各部を集中的に制御するマイクロコンピュータと、基板処理に関する基板処理情報や各種プログラムなどを記憶する記憶部とを備えている。この制御部１１は、基板処理情報や各種プログラムに基づいて回転機構５や第１の処理液供給部６、第２の処理液供給部７、加熱部８、移動機構９などを制御し、回転中のテーブル４上の基板Ｗの表面に対し、第１の処理液供給部６による第１の処理液の供給、第２の処理液供給部７による第２の処理液の供給及び加熱部８による照射（加熱）などの制御を行う。   The control unit 11 includes a microcomputer that centrally controls each unit and a storage unit that stores substrate processing information and various programs related to substrate processing. The control unit 11 controls the rotation mechanism 5, the first processing liquid supply unit 6, the second processing liquid supply unit 7, the heating unit 8, the moving mechanism 9, and the like based on the substrate processing information and various programs. The first processing liquid supply unit 6 supplies the first processing liquid, the second processing liquid supply unit 7 supplies the second processing liquid to the surface of the substrate W on the table 4 inside, and the heating unit 8. Controls irradiation (heating) by the.

次に、前述の基板処理装置１が行う基板処理（基板処理方法）について図２を参照して説明する。なお、テーブル４上には基板Ｗがセットされており、前準備は完了している。また、加熱部８はカップ３から所定距離だけ離間した待機位置（図１中の一点鎖線参照）で待機しており、点灯されていない状態である。   Next, substrate processing (substrate processing method) performed by the above-described substrate processing apparatus 1 will be described with reference to FIG. The substrate W is set on the table 4 and the preparation is completed. In addition, the heating unit 8 is on standby at a standby position (see a one-dot chain line in FIG. 1) that is a predetermined distance away from the cup 3, and is not lit.

図２に示すように、まず、制御部１１は回転機構５を制御し、テーブル４を所定の回転数で回転させる（ステップＳ１）。次いで、制御部１１は移動機構９を制御し、加熱部８を待機位置から照射位置に下降させ、さらに、加熱部８を制御して加熱部８の各ランプ８ａを点灯し、回転するテーブル４上の基板Ｗを加熱する（ステップＳ２）。   As shown in FIG. 2, first, the control unit 11 controls the rotation mechanism 5 to rotate the table 4 at a predetermined number of rotations (step S1). Next, the control unit 11 controls the moving mechanism 9 to lower the heating unit 8 from the standby position to the irradiation position, and further controls the heating unit 8 to turn on each lamp 8a of the heating unit 8 and rotate the table 4. The upper substrate W is heated (step S2).

このとき、加熱部８は基板Ｗの温度を数秒（例えば、１０秒）で１００度以上にすることが可能である。また、この加熱部８が待機位置から照射位置に移動し、テーブル４上の基板Ｗの表面に近づくため、基板Ｗのみを効率的に加熱することが可能であり、基板Ｗ以外の他の部材への熱供給を抑制することができる。なお、短時間での高温到達のためには、基板Ｗが熱吸収する波長である波長５００〜１００００ｎｍにピーク強度を有する加熱部８を用いることが望ましい。このため、基板Ｗ上の処理液（この処理液は後述のステップＳ３で供給されることになる）は熱吸収せず、加熱部８は基板Ｗを直接加熱することになる。   At this time, the heating unit 8 can increase the temperature of the substrate W to 100 degrees or more in several seconds (for example, 10 seconds). In addition, since the heating unit 8 moves from the standby position to the irradiation position and approaches the surface of the substrate W on the table 4, only the substrate W can be efficiently heated. The heat supply to can be suppressed. In order to reach a high temperature in a short time, it is desirable to use the heating unit 8 having a peak intensity at a wavelength of 500 to 10,000 nm, which is a wavelength that the substrate W absorbs heat. For this reason, the processing liquid on the substrate W (this processing liquid will be supplied in step S3 described later) does not absorb heat, and the heating unit 8 directly heats the substrate W.

ステップＳ２の後、基板Ｗの温度が所定の基板温度（例えば、１００℃）になると、制御部１１は第１の処理液供給部６を制御し、回転するテーブル４上の基板Ｗの表面に第１のノズル６ａから第１の処理液、すなわち硫酸溶液の供給を開始する（ステップＳ３）。第１の処理液としての硫酸溶液は、第１のノズル６ａから、回転するテーブル４上の基板Ｗの中央に向けて吐出され、基板Ｗの回転による遠心力によって基板Ｗの表面全体に広がっていく。これにより、テーブル４上の基板Ｗの表面は硫酸溶液により覆われて処理されることになる。なお、確実な処理のためには、供給する処理液の流量を１０００ｍｌ／ｍｉｎ以下の範囲にし、加えて、処理液を吐出する角度を基板Ｗの表面に対して１０°から９０°の範囲内とすることが望ましい。   After step S2, when the temperature of the substrate W reaches a predetermined substrate temperature (for example, 100 ° C.), the control unit 11 controls the first processing liquid supply unit 6 to be placed on the surface of the substrate W on the rotating table 4. The supply of the first processing liquid, that is, the sulfuric acid solution is started from the first nozzle 6a (step S3). The sulfuric acid solution as the first treatment liquid is discharged from the first nozzle 6a toward the center of the substrate W on the rotating table 4, and spreads over the entire surface of the substrate W by the centrifugal force caused by the rotation of the substrate W. Go. As a result, the surface of the substrate W on the table 4 is covered with the sulfuric acid solution and processed. For reliable processing, the flow rate of the processing liquid to be supplied is in the range of 1000 ml / min or less, and in addition, the angle at which the processing liquid is discharged is within the range of 10 ° to 90 ° with respect to the surface of the substrate W. Is desirable.

ここで、所定の基板温度は、基板Ｗの表面に供給された第１の処理液（基板Ｗの表面に接する表面側の処理液）がその基板表面で所定温度以上となるように設定されている。基板温度とは基板の温度のことで、所定の基板温度とは第１の処理液が基板表面で所定温度以上となる基板温度である。また、所定温度とは、基板表面での第１の処理液の温度で、かつ、第１の処理液が基板Ｗの表面からレジストを良好に剥離することが可能となる温度、すなわち基板処理効率が向上する温度である。例えば、その所定温度が８０℃であれば、前述の所定の基板温度は１００℃に設定されている。このような所定温度は処理液の種類に応じて異なるが、少なくとも基板処理効率（例えば、処理液の処理性能）が向上するために必要となる温度である。なお、所定の基板温度やテーブル４の回転数などの処理条件はあらかじめ設定されているが、操作者によって任意に変更可能である。   Here, the predetermined substrate temperature is set such that the first processing liquid supplied to the surface of the substrate W (the processing liquid on the surface side in contact with the surface of the substrate W) is equal to or higher than the predetermined temperature on the substrate surface. Yes. The substrate temperature is the temperature of the substrate, and the predetermined substrate temperature is the substrate temperature at which the first processing liquid becomes equal to or higher than the predetermined temperature on the substrate surface. The predetermined temperature is the temperature of the first processing liquid on the substrate surface, and the temperature at which the first processing liquid can favorably peel the resist from the surface of the substrate W, that is, the substrate processing efficiency. Is a temperature that improves. For example, if the predetermined temperature is 80 ° C., the predetermined substrate temperature is set to 100 ° C. Such a predetermined temperature varies depending on the type of the processing liquid, but is a temperature required to improve at least the substrate processing efficiency (for example, the processing performance of the processing liquid). The processing conditions such as the predetermined substrate temperature and the number of rotations of the table 4 are set in advance, but can be arbitrarily changed by the operator.

ステップＳ３の後、制御部１１は第１の処理液供給部６及び加熱部８を制御し、第１の処理液の供給量や光の照射量を調整して基板Ｗの温度を所定の基板温度以上に維持しつつ、所定時間、第１の処理液（前述の硫酸溶液）を供給し続ける（ステップＳ４）。この第１の処理液の供給中にも、基板Ｗの表面上で第１の処理液（基板Ｗの表面に接する表面側の処理液）を所定温度以上にするため、基板Ｗの温度は所定の基板温度以上に維持されている。したがって、基板Ｗの表面に対する第１の処理液の供給によってその基板温度が低下する、すなわち基板処理効率が低下するということは無くなる。このように処理液の供給量や光の照射量を制御することによって基板Ｗの温度を調整しながら処理を行うことが可能であり、基板Ｗの表面上の第１の処理液を所定温度以上に維持することができる。   After step S3, the control unit 11 controls the first processing liquid supply unit 6 and the heating unit 8, and adjusts the supply amount of the first processing liquid and the light irradiation amount to set the temperature of the substrate W to a predetermined substrate. While maintaining the temperature or higher, the first treatment liquid (the aforementioned sulfuric acid solution) is continuously supplied for a predetermined time (step S4). Even during the supply of the first processing liquid, the temperature of the substrate W is set at a predetermined temperature in order to keep the first processing liquid (the processing liquid on the surface side in contact with the surface of the substrate W) above the predetermined temperature on the surface of the substrate W. The substrate temperature is maintained above. Accordingly, the supply of the first processing liquid to the surface of the substrate W does not reduce the substrate temperature, that is, the substrate processing efficiency does not decrease. In this way, it is possible to perform the processing while adjusting the temperature of the substrate W by controlling the supply amount of the processing liquid and the irradiation amount of light, and the first processing liquid on the surface of the substrate W is kept at a predetermined temperature or higher. Can be maintained.

例えば、処理液の供給量の調整では、制御部１１は、各温度検出部１０によりそれぞれ検出された基板Ｗの温度に応じて第１の処理液供給部６を制御し、例えば、処理液の供給量を減らして液温をあげたり、あるいは、第１の処理液供給部６及び加熱部８を制御し、処理液の供給量を増やして光の照射量を増加させるように処理液の供給量と光の照射量を連鎖させたりする。   For example, in the adjustment of the supply amount of the processing liquid, the control unit 11 controls the first processing liquid supply unit 6 according to the temperature of the substrate W detected by each temperature detection unit 10. Supply the treatment liquid so as to increase the liquid temperature by decreasing the supply amount or by controlling the first treatment liquid supply unit 6 and the heating unit 8 to increase the supply amount of the treatment liquid and increase the light irradiation amount. The amount and the irradiation amount of light are linked.

また、光の照射量（光量）の調整では、制御部１１は、各温度検出部１０によりそれぞれ検出された基板Ｗの温度に応じて加熱部８の各ランプ８ａを制御する。例えば、制御部１１は、基板中心部の温度が所定の基板温度よりも低くなると、その基板中心部に対向するランプ８ａの光量を増やし、逆に高くなり過ぎると（所定の上限温度を超えると）、その基板中心部に対向するランプ８ａの光量を減らす。同様に、基板半径中央部の温度が所定の基板温度よりも低くなると、その基板半径中央部に対向するランプ８ａの光量を増やし、逆に高くなり過ぎると、その基板半径中央部に対向するランプ８ａの光量を減らす。また、基板周縁部の温度が所定の基板温度よりも低くなると、その基板周縁部に対向するランプ８ａの光量を増やし、逆に高くなり過ぎると、その基板周縁部に対向するランプ８ａの光量を減らす。このようにして、基板Ｗの温度を場所によって個別に調整し、基板Ｗの表面温度を均一にすることが可能となるため、基板Ｗの表面上で第１の処理液（基板Ｗの表面に接する表面側の処理液）を所定温度以上に維持することができる。   Further, in adjusting the light irradiation amount (light quantity), the control unit 11 controls each lamp 8 a of the heating unit 8 according to the temperature of the substrate W detected by each temperature detection unit 10. For example, when the temperature at the center of the substrate is lower than a predetermined substrate temperature, the control unit 11 increases the light amount of the lamp 8a facing the center of the substrate, and conversely, when the temperature is too high (when a predetermined upper limit temperature is exceeded). ), The amount of light of the lamp 8a facing the central portion of the substrate is reduced. Similarly, when the temperature at the central portion of the substrate radius is lower than the predetermined substrate temperature, the amount of light of the lamp 8a facing the central portion of the substrate radius is increased, and conversely, when the temperature is too high, the lamp facing the central portion of the substrate radius. Reduce the amount of light 8a. When the temperature at the peripheral edge of the substrate is lower than the predetermined substrate temperature, the light amount of the lamp 8a facing the peripheral edge of the substrate is increased. Conversely, when the temperature is too high, the light amount of the lamp 8a facing the peripheral edge of the substrate is increased. cut back. In this way, the temperature of the substrate W can be individually adjusted depending on the location, and the surface temperature of the substrate W can be made uniform. Therefore, the first processing liquid (on the surface of the substrate W is formed on the surface of the substrate W). The surface-side treatment liquid in contact with the substrate can be maintained at a predetermined temperature or higher.

なお、基板Ｗの温度差を無くすためには、前述のような制御だけではなく、加熱部８の各ランプ８ａの設置密度を場所に応じて変えるようにしても良い。例えば、基板Ｗの周辺温度の影響を受けやすく、基板Ｗの温度が低下しやすい基板周縁部に対向する場所ではランプ８ａの設置密度を高くし、逆に、基板Ｗの温度が低下し難い基板中央部に対向する場所ではランプ８ａの設置密度を低くするようにする。また、基板Ｗの中心から周縁に向けて徐々にランプ８ａの設置密度を高くするようにしても良い。   In order to eliminate the temperature difference of the substrate W, not only the above-described control but also the installation density of the lamps 8a of the heating unit 8 may be changed depending on the location. For example, the installation density of the lamps 8a is increased at a location facing the peripheral edge of the substrate that is easily influenced by the ambient temperature of the substrate W and the temperature of the substrate W is likely to be lowered, and conversely, the temperature of the substrate W is hardly lowered. The installation density of the lamps 8a is made low at a location facing the central portion. Further, the installation density of the lamps 8a may be gradually increased from the center of the substrate W toward the periphery.

ステップＳ４の後、制御部１１は、第１の処理液の供給を停止してから、加熱部８を制御して加熱部８の各ランプ８ａを消灯し、さらに、移動機構９を制御して加熱部８を照射位置から待機位置に上昇させ、回転するテーブル４上の基板Ｗの加熱を停止する（ステップＳ５）。   After step S4, the control unit 11 stops supplying the first processing liquid, then controls the heating unit 8 to turn off the lamps 8a of the heating unit 8, and further controls the moving mechanism 9. The heating unit 8 is raised from the irradiation position to the standby position, and heating of the substrate W on the rotating table 4 is stopped (step S5).

ステップＳ５の後、制御部１１は、第２の処理液供給部７を制御し、回転するテーブル４上の基板Ｗの表面に第２のノズル７ａから第２の処理液、すなわち超純水を所定時間供給する（ステップＳ６）。第２の処理液としての超純水は、第２のノズル７ａから、回転するテーブル４上の基板Ｗの中央に向けて吐出され、基板Ｗの回転による遠心力によって基板Ｗの表面全体に広がっていく。これにより、テーブル４上の基板Ｗの表面は超純水により覆われて洗浄されることになる。   After step S5, the control unit 11 controls the second processing liquid supply unit 7 to supply the second processing liquid, that is, ultrapure water from the second nozzle 7a to the surface of the substrate W on the rotating table 4. Supply for a predetermined time (step S6). The ultrapure water as the second treatment liquid is discharged from the second nozzle 7a toward the center of the substrate W on the rotating table 4, and spreads over the entire surface of the substrate W by the centrifugal force generated by the rotation of the substrate W. To go. As a result, the surface of the substrate W on the table 4 is covered and cleaned with the ultrapure water.

ステップＳ６の後、制御部１１は、第２の処理液の供給を停止してから、回転機構５によるテーブル４の回転を所定時間持続し、その回転による振り切りによってテーブル４上の基板Ｗの表面を乾燥し（ステップＳ７）、最後に、回転機構５を制御して基板Ｗの回転を停止し（ステップＳ８）、処理が完了する。なお、基板Ｗの乾燥では、基板Ｗの表面上に残った超純水は基板Ｗの回転による遠心力により飛散してカップ３により回収される。この乾燥処理後、基板Ｗがテーブル４の各支持部材４ａから取り外されて搬出される。   After step S6, the control unit 11 stops the supply of the second processing liquid and then continues the rotation of the table 4 by the rotation mechanism 5 for a predetermined time, and the surface of the substrate W on the table 4 by swinging off by the rotation. Is finally dried (step S7). Finally, the rotation mechanism 5 is controlled to stop the rotation of the substrate W (step S8), and the processing is completed. In the drying of the substrate W, the ultrapure water remaining on the surface of the substrate W is scattered by the centrifugal force generated by the rotation of the substrate W and collected by the cup 3. After this drying process, the substrate W is removed from each support member 4a of the table 4 and carried out.

このような基板処理工程では、第１の処理液の供給前に、基板Ｗは加熱部８による照射によって所定の基板温度以上に加熱されている。このため、第１の処理液が基板Ｗの表面に供給されると、その第１の処理液に基板Ｗの熱が伝わり、基板Ｗの表面に接する表面側の第１の処理液が瞬時に温められる。これにより、基板Ｗの表面で第１の処理液の温度を確実に所定温度（例えば、８０℃）以上にすることが可能となるので、基板処理効率を向上させることができる。   In such a substrate processing step, the substrate W is heated to a predetermined substrate temperature or higher by irradiation with the heating unit 8 before supplying the first processing liquid. For this reason, when the first processing liquid is supplied to the surface of the substrate W, the heat of the substrate W is transmitted to the first processing liquid, and the first processing liquid on the surface side in contact with the surface of the substrate W is instantaneously generated. Be warmed up. Accordingly, the temperature of the first processing liquid can be reliably set to a predetermined temperature (for example, 80 ° C.) or higher on the surface of the substrate W, so that the substrate processing efficiency can be improved.

ここで、処理液が基板表面で所定温度以上になるように基板Ｗが所定の基板温度以上に加熱されている。このとき、基板Ｗに供給された処理液全体が一気に所定温度以上になるのではなく、基板Ｗの表面に接している部分が少なくとも所定温度になることが重要である。つまり、基板処理装置１は、処理液を加熱してレジスト剥離などを行う処理装置であって、ライデンフロスト現象を利用した乾燥装置ではない。このため、ライデンフロスト現象とは異なり、処理液において基板Ｗの表面に接している部分から順に加熱される。   Here, the substrate W is heated to a predetermined substrate temperature or higher so that the processing liquid reaches a predetermined temperature or higher on the substrate surface. At this time, it is important that the entire processing liquid supplied to the substrate W does not become a predetermined temperature or more at once, but at least a portion in contact with the surface of the substrate W reaches a predetermined temperature. That is, the substrate processing apparatus 1 is a processing apparatus that heats the processing liquid and performs resist stripping, and is not a drying apparatus that uses the Leidenfrost phenomenon. For this reason, unlike the Leidenfrost phenomenon, the processing liquid is heated in order from the portion in contact with the surface of the substrate W.

詳述すると、基板Ｗに供給された処理液は、処理液上方に配置される加熱部８の各ランプ８ａから光照射を受けるものの、光は処理液を透過するため、あくまでもその基板Ｗの表面に接している部分から熱せられる。このため、処理液の反応は基板Ｗの表面と接触している部分で生じ、その反応がレジスト剥離に極めて有効に作用する。これに対して処理液全体が一挙に加熱されてしまうと、処理液全体の反応が一気に進んでしまい、反応が済んでしまった処理液が基板Ｗの表面に接しても、レジスト剥離に有効に働かない。   More specifically, although the processing liquid supplied to the substrate W is irradiated with light from each lamp 8a of the heating unit 8 disposed above the processing liquid, since the light passes through the processing liquid, the surface of the substrate W is only used. It is heated from the part which touches. For this reason, the reaction of the processing liquid occurs at a portion in contact with the surface of the substrate W, and the reaction acts extremely effectively on the resist peeling. On the other hand, if the entire processing solution is heated at once, the reaction of the entire processing solution proceeds at a stretch, and even if the processed processing solution has contacted the surface of the substrate W, it is effective for resist stripping. Does not work.

また、第１の処理液を予め加熱しておく必要はなく、第１の処理液は基板Ｗの表面上、すなわち反応を必要とする箇所で加熱されるため、第１の処理液の温度がその流路途中などで低下することはなく、基板処理効率を確実に向上させることができる。さらに、従来のように、処理液により基板Ｗの温度を上げるために処理液を大量に使用する必要は無くなるので、処理液の使用量を抑えることができる。   Further, it is not necessary to preheat the first processing liquid, and the first processing liquid is heated on the surface of the substrate W, that is, at a place where a reaction is required, so that the temperature of the first processing liquid is The substrate processing efficiency can be reliably improved without lowering in the middle of the flow path. Further, since it is not necessary to use a large amount of the processing liquid in order to increase the temperature of the substrate W with the processing liquid as in the prior art, the amount of the processing liquid used can be suppressed.

また、処理液を予め加熱して供給する場合には、処理液、例えば、過酸化水素水やペルオキソ一硫酸などの酸化性溶液の酸化性物質が反応し、酸化性物質の濃度が低下してしまう。ところが、前述のように基板Ｗ上で処理液を加熱することによって、処理液を予め加熱して供給する場合に比べ反応の開始を遅らせ、処理液の基板処理性能の低下を抑止することが可能となる。さらに、基板Ｗに処理液を供給するノズルや配管などを耐熱性部材により形成する必要がなく、コストを抑えることができる。   In addition, when the treatment liquid is heated and supplied in advance, the oxidizing substance in the oxidizing solution such as hydrogen peroxide or peroxomonosulfuric acid reacts to reduce the concentration of the oxidizing substance. End up. However, by heating the processing liquid on the substrate W as described above, it is possible to delay the start of the reaction compared to the case where the processing liquid is heated and supplied in advance, and to suppress a decrease in the substrate processing performance of the processing liquid. It becomes. Further, it is not necessary to form a nozzle or a pipe for supplying the processing liquid to the substrate W with a heat resistant member, and the cost can be reduced.

また、基板Ｗを加熱していない場合には、基板中心付近に供給された処理液は、基板Ｗ及びその周辺雰囲気に熱を奪われながら、遠心力によって基板周縁部へと流れていく。このため、基板中心部と基板周縁部とでは温度差が生じ、基板表面において基板処理効率の不均一が発生してしまう。ところが、前述のように基板Ｗ自体が加熱されている場合には、処理液は基板Ｗ上で直接温められるため、その処理液の温度が基板中心部と基板周縁部とで異なることはなく、基板表面での温度差による基板処理効率の不均一を抑止することができる。   Further, when the substrate W is not heated, the processing liquid supplied near the center of the substrate flows toward the peripheral edge of the substrate by centrifugal force while the heat is deprived by the substrate W and the surrounding atmosphere. For this reason, a temperature difference occurs between the central portion of the substrate and the peripheral portion of the substrate, and non-uniformity in substrate processing efficiency occurs on the substrate surface. However, when the substrate W itself is heated as described above, since the processing liquid is directly heated on the substrate W, the temperature of the processing liquid is not different between the central portion of the substrate and the peripheral portion of the substrate. It is possible to suppress non-uniformity in substrate processing efficiency due to a temperature difference on the substrate surface.

また、処理液の供給中にも、基板Ｗの温度はその基板表面上の処理液（基板Ｗの表面に接する表面側の処理液）を所定温度以上に維持するように保たれている。したがって、基板Ｗの表面に対する処理液の供給によってその基板温度が低下する、すなわち基板処理効率が低下するということは無くなるため、基板処理効率を確実に向上させることができる。さらに、基板Ｗの温度を場所によって個別に調整し、基板Ｗの表面温度を均一にすることが可能となるため、基板表面での温度差による基板処理効率の不均一をより確実に抑止することができる。   Further, even during the supply of the processing liquid, the temperature of the substrate W is maintained so that the processing liquid on the surface of the substrate (the processing liquid on the surface side in contact with the surface of the substrate W) is maintained at a predetermined temperature or higher. Therefore, since the substrate temperature does not decrease due to the supply of the processing liquid to the surface of the substrate W, that is, the substrate processing efficiency does not decrease, the substrate processing efficiency can be reliably improved. Furthermore, since the temperature of the substrate W can be individually adjusted depending on the location and the surface temperature of the substrate W can be made uniform, the non-uniformity in the substrate processing efficiency due to the temperature difference on the substrate surface can be more reliably suppressed. Can do.

なお、処理液の種類によっては、加熱により処理液の濃度が徐々に低下するものがあるが、基板Ｗを温めておくことによって反応の開始が基板Ｗ上となり、加熱による処理液の劣化を最小限に抑制することが可能となるので、処理性能や処理液寿命を向上させることができる。例えば、処理液としての酸化性溶液は、加熱により反応が始まる溶液であり、反応が始まると、酸化性溶液中にある酸化性物質濃度が低下する。このため、処理液の基板処理性能が低くなり、また、処理液を回収して再利用することも不可能となる。そこで、基板Ｗの表面上で酸化性溶液を加熱して酸化性物質を反応させ、さらに、その表面に酸化性溶液を供給し続けることによって、酸化性物質濃度を極端に低下させずに処理を行うことができる。また、回収して再利用することができる酸化性溶液の濃度を維持して酸化性溶液を回収することができる。   Depending on the type of processing liquid, the concentration of the processing liquid gradually decreases by heating. However, by warming the substrate W, the reaction starts on the substrate W, and the deterioration of the processing liquid due to heating is minimized. Therefore, the processing performance and the life of the processing liquid can be improved. For example, an oxidizing solution as a treatment liquid is a solution that starts a reaction by heating, and when the reaction starts, the concentration of an oxidizing substance in the oxidizing solution decreases. For this reason, the substrate processing performance of the processing liquid is lowered, and the processing liquid cannot be recovered and reused. Therefore, the oxidizing solution is heated on the surface of the substrate W to react with the oxidizing substance, and further, the oxidizing solution concentration is continuously supplied to the surface, so that the processing can be performed without extremely reducing the oxidizing substance concentration. It can be carried out. Further, the oxidizing solution can be recovered while maintaining the concentration of the oxidizing solution that can be recovered and reused.

ただし、加熱により処理液の濃度が徐々に低下することが基板処理効率の低下に大きく影響を及ぼす場合には、処理液の濃度変化に応じて処理液の供給量を調整することが望ましい。この場合には、例えば、所定の基板温度における処理液の濃度と経過時間との関係を予め求めておき、所定の基板温度で基板Ｗ上の処理液の濃度が一定となるように供給開始からの経過時間に応じて処理液の供給量を調整する（例えば、徐々に供給量を増やす）。   However, when the concentration of the processing liquid gradually decreases due to heating, which greatly affects the decrease in substrate processing efficiency, it is desirable to adjust the supply amount of the processing liquid according to the change in the concentration of the processing liquid. In this case, for example, the relationship between the concentration of the processing liquid at a predetermined substrate temperature and the elapsed time is obtained in advance, and from the start of supply so that the concentration of the processing liquid on the substrate W is constant at the predetermined substrate temperature. The supply amount of the processing liquid is adjusted according to the elapsed time (for example, the supply amount is gradually increased).

また、処理液の温度が所定温度よりある程度、例えば数十度高い場合には、基板Ｗの表面に接する表面側の処理液の温度が所定温度以上に維持されているという条件（維持条件）下で、基板Ｗの温度が多少低くなったとしても、基板処理効率が低下することはない。このような場合には、処理液の濃度変化に応じて光の照射量を調整することも可能であり、例えば、基板Ｗ上の処理液の濃度低下を抑えるように供給開始からの経過時間に応じて、前述の維持条件を保ちつつ、徐々に照射量を減らすことも可能である。   Further, when the temperature of the processing liquid is higher than the predetermined temperature to some extent, for example, several tens of degrees, the condition (maintenance condition) is that the temperature of the processing liquid on the surface side in contact with the surface of the substrate W is maintained above the predetermined temperature. Thus, even if the temperature of the substrate W is somewhat lowered, the substrate processing efficiency does not decrease. In such a case, it is also possible to adjust the amount of light irradiation according to the change in the concentration of the processing liquid. For example, in an elapsed time from the start of supply so as to suppress a decrease in the concentration of the processing liquid on the substrate W. Accordingly, it is possible to gradually reduce the irradiation amount while maintaining the above-mentioned maintenance conditions.

以上説明したように、第１の実施形態によれば、基板Ｗの表面に、その基板Ｗにより吸収され処理液を透過する光を照射し、その基板Ｗの表面上の処理液を基板処理効率が向上する所定温度（例えば、８０℃）以上とするように基板Ｗを加熱することによって、基板Ｗの表面に供給された処理液（基板Ｗの表面に接する側の処理液）はその基板表面上で所定温度以上まで温められる。このように、基板Ｗの表面で処理液の温度を確実に所定温度以上とすることが可能となり、基板Ｗの表面に供給された処理液が基板Ｗの温度の影響を受けて低下することは無くなるので、基板処理効率を向上させることができる。さらに、処理液により基板Ｗの温度を上げるために処理液を大量に使用する必要は無くなるので、処理液の使用量を抑止することもできる。   As described above, according to the first embodiment, the surface of the substrate W is irradiated with light absorbed by the substrate W and transmitted through the processing liquid, and the processing liquid on the surface of the substrate W is subjected to substrate processing efficiency. By heating the substrate W so as to be a predetermined temperature (for example, 80 ° C.) or higher, the processing liquid supplied to the surface of the substrate W (the processing liquid in contact with the surface of the substrate W) is the surface of the substrate. It can be warmed to above the predetermined temperature. As described above, the temperature of the processing liquid on the surface of the substrate W can be surely set to a predetermined temperature or more, and the processing liquid supplied to the surface of the substrate W is affected by the temperature of the substrate W and is reduced. Since it is eliminated, the substrate processing efficiency can be improved. Furthermore, since it is not necessary to use a large amount of the processing liquid in order to raise the temperature of the substrate W by the processing liquid, the amount of the processing liquid used can be suppressed.

特に、基板Ｗの表面に接する表面側の処理液の温度を所定温度以上に維持するように処理液の供給及び光の照射のどちらか一方又は両方を制御することによって、例えば、処理液の供給量や光の照射量を調整する（一例として、液温を上げるためには処理液の供給量を減らしたり、あるいは、光の照射量を増やしたりする）ことで、基板Ｗの表面に接する表面側の処理液の温度を所定温度以上に確実に保つことが可能となるので、基板処理効率の向上及び処理液使用量の抑止をより確実に実現することができる。   In particular, by controlling either or both of the supply of the treatment liquid and the irradiation of light so as to maintain the temperature of the treatment liquid on the surface side in contact with the surface of the substrate W at a predetermined temperature or more, for example, the supply of the treatment liquid The surface that is in contact with the surface of the substrate W by adjusting the amount and the amount of light irradiation (for example, to increase the liquid temperature, decrease the supply amount of the processing liquid or increase the amount of light irradiation). Since the temperature of the processing solution on the side can be reliably maintained at a predetermined temperature or higher, the substrate processing efficiency can be improved and the amount of processing solution used can be more reliably realized.

また、光の照射による加熱を処理液の供給よりも先に開始することによって、加熱部８として瞬時に基板Ｗを高温とするような高出力な加熱部を用いなくても、基板Ｗの温度を所定の基板温度以上にしておき、基板Ｗの表面に接する表面側の処理液の温度を所定温度以上にすることが可能となるので、例えば加熱部８のランプ８ａの本数を減らすことも可能であり、装置の簡略化やコスト削減を実現することができる。さらに、基板Ｗに加えその周辺雰囲気も予め温めておくことが可能となり、周辺雰囲気が処理液から熱を奪うことを確実に抑えることができる。これにより、基板Ｗの表面で処理液の温度をより短時間で所定温度以上にすることが可能となるため、処理液使用量の削減に加え、処理時間の短縮も実現することができる。   Further, by starting the heating by light irradiation prior to the supply of the processing liquid, the temperature of the substrate W can be obtained without using a high-power heating unit that instantaneously raises the temperature of the substrate W as the heating unit 8. Since the temperature of the processing liquid on the surface side in contact with the surface of the substrate W can be set to a predetermined temperature or higher, for example, the number of lamps 8a of the heating unit 8 can be reduced. Thus, simplification of the apparatus and cost reduction can be realized. Furthermore, it is possible to preheat the surrounding atmosphere in addition to the substrate W, and it is possible to reliably suppress the surrounding atmosphere from taking heat away from the processing liquid. As a result, the temperature of the processing liquid on the surface of the substrate W can be increased to a predetermined temperature or more in a shorter time, so that the processing time can be shortened in addition to the reduction in the amount of processing liquid used.

（第２の実施形態）
第２の実施形態について図３を参照して説明する。 (Second Embodiment)
A second embodiment will be described with reference to FIG.

第２の実施形態は基本的に第１の実施形態と同様である。このため、第２の実施形態では、第１の実施形態との相違点について説明し、第１の実施形態で説明した部分と同一部分は同一符号で示し、その説明も省略する。   The second embodiment is basically the same as the first embodiment. Therefore, in the second embodiment, differences from the first embodiment will be described, the same parts as those described in the first embodiment will be denoted by the same reference numerals, and the description thereof will also be omitted.

図３に示すように、第２の実施形態に係る基板処理装置１においては、第１の処理液供給部６のノズル６ａ及び第２の処理液供給部７のノズル７ａが加熱部８内に設けられている。これらのノズル６ａ及び７ａは、テーブル４上の基板Ｗの表面にそれぞれの流体（第１の処理液又は第２の処理液）を供給可能に形成されている。なお、各ノズル６ａ及び７ａの材料としては、熱により変形しない材料を用いており、例えば、加熱部８の各ランプ８ａにより加熱されても変形しない石英などの材料を用いることが可能である。   As shown in FIG. 3, in the substrate processing apparatus 1 according to the second embodiment, the nozzle 6 a of the first processing liquid supply unit 6 and the nozzle 7 a of the second processing liquid supply unit 7 are in the heating unit 8. Is provided. These nozzles 6 a and 7 a are formed so as to be able to supply respective fluids (first processing liquid or second processing liquid) to the surface of the substrate W on the table 4. In addition, as the material of each nozzle 6a and 7a, the material which does not deform | transform by heat is used, For example, it is possible to use materials, such as quartz which does not deform | transform even if it heats with each lamp | ramp 8a of the heating part 8. FIG.

このような基板処理装置１では、各ノズル６ａ及び７ａがテーブル４上の基板Ｗの直上に位置するため、処理液を供給するときの流速が遅くても、基板中心に処理液を容易に供給することができる。また、供給する処理液の流量を少なくしても処理液により基板Ｗの表面を被覆することが可能となるので、処理液の使用量を削減することができる。   In such a substrate processing apparatus 1, since each nozzle 6a and 7a is located immediately above the substrate W on the table 4, even if the flow rate when supplying the processing liquid is slow, the processing liquid is easily supplied to the center of the substrate. can do. Further, since the surface of the substrate W can be coated with the processing liquid even if the flow rate of the processing liquid to be supplied is reduced, the amount of the processing liquid used can be reduced.

以上説明したように、第２の実施形態によれば、第１の実施形態と同様の効果を得ることができる。さらに、加熱部８内に各ノズル６ａ及び７ａを設けることによって、処理液を供給するときの流速が遅い場合でも、基板中心に処理液を容易に供給することができる。加えて、処理液の流量を少なくすることも可能であり、処理液の使用量を削減することができる。   As described above, according to the second embodiment, the same effect as that of the first embodiment can be obtained. Furthermore, by providing the nozzles 6a and 7a in the heating unit 8, the processing liquid can be easily supplied to the center of the substrate even when the flow rate when supplying the processing liquid is slow. In addition, the flow rate of the processing liquid can be reduced, and the amount of processing liquid used can be reduced.

以上、本発明のいくつかの実施形態を説明したが、これらの実施形態は、例として提示したものであり、発明の範囲を限定することは意図していない。例えば、第１の処理液や第２の処理液などの供給は、それぞれの供給時間が重ならない実施形態で説明したが、一部重なっても構わない。また、上述したこれら新規な実施形態は、その他の様々な形態で実施されることが可能であり、発明の要旨を逸脱しない範囲で、種々の省略、置き換え、変更を行うことができる。これら実施形態やその変形は、発明の範囲や要旨に含まれるとともに、特許請求の範囲に記載された発明とその均等の範囲に含まれる。   As mentioned above, although some embodiment of this invention was described, these embodiment is shown as an example and is not intending limiting the range of invention. For example, the supply of the first treatment liquid, the second treatment liquid, and the like has been described in the embodiment in which the respective supply times do not overlap, but may partially overlap. The above-described novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

１ 基板処理装置
５ 回転機構
６ 第１の処理液供給部
８ 加熱部
１０ 温度検出部
１１ 制御部
Ｗ 基板 DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 5 Rotating mechanism 6 1st process liquid supply part 8 Heating part 10 Temperature detection part 11 Control part W Substrate

Claims (8)

基板の表面に処理液を供給する処理液供給部と、
前記基板の表面に、前記基板により吸収され前記処理液を透過する光を照射して前記基板を加熱する加熱部と、
を備えることを特徴とする基板処理装置。 A treatment liquid supply unit for supplying a treatment liquid to the surface of the substrate;
A heating unit that heats the substrate by irradiating the surface of the substrate with light absorbed by the substrate and passing through the treatment liquid;
A substrate processing apparatus comprising: 前記加熱部により加熱された前記基板の温度を検出する温度検出部と、
前記温度検出部により検出された前記基板の温度に応じて、前記基板の表面に接する表面側の処理液を基板処理効率が向上する所定温度以上に維持するよう、前記処理液供給部及び前記加熱部のどちらか一方又は両方を制御する制御部と、
をさらに備えることを特徴とする請求項１に記載の基板処理装置。 A temperature detection unit for detecting the temperature of the substrate heated by the heating unit;
In accordance with the temperature of the substrate detected by the temperature detection unit, the processing liquid supply unit and the heating are performed so as to maintain the processing liquid on the surface side in contact with the surface of the substrate at a predetermined temperature or higher at which substrate processing efficiency is improved. A control unit for controlling one or both of the units;
The substrate processing apparatus according to claim 1, further comprising: 前記制御部は、前記処理液供給部による処理液の供給よりも前に、前記加熱部に前記基板の表面に対する光の照射を開始させることを特徴とする請求項２に記載の基板処理装置。   The substrate processing apparatus according to claim 2, wherein the control unit causes the heating unit to start irradiating light on the surface of the substrate before supplying the processing liquid by the processing liquid supply unit. 前記基板を平面内で回転させる回転機構をさらに備え、
前記制御部は、前記回転機構による前記基板の回転中に、前記処理液供給部に前記基板の表面に対する処理液の供給を実行させ、前記加熱部に前記基板の表面に対する光の照射を実行させることを特徴とする請求項２又は請求項３に記載の基板処理装置。 A rotation mechanism for rotating the substrate in a plane;
The control unit causes the processing liquid supply unit to supply a processing liquid to the surface of the substrate and rotates the heating unit to irradiate the surface of the substrate while the substrate is rotated by the rotation mechanism. The substrate processing apparatus according to claim 2 or 3, wherein 基板の表面に処理液を供給する工程と、
前記基板の表面に、前記基板により吸収され前記処理液を透過する光を照射して前記基板を加熱する工程と、
を有することを特徴とする基板処理方法。 Supplying a treatment liquid to the surface of the substrate;
Irradiating the surface of the substrate with light that is absorbed by the substrate and transmitted through the treatment liquid, and heating the substrate;
A substrate processing method comprising: 加熱した前記基板の温度を検出する工程と、
検出した前記基板の温度に応じて、前記基板の表面に接する表面側の処理液を基板処理効率が向上する所定温度以上に維持するよう、前記基板の表面に対する処理液の供給及び前記基板の表面に対する光の照射のどちらか一方又は両方を制御する工程と、
をさらに有することを特徴とする請求項５に記載の基板処理方法。 Detecting the temperature of the heated substrate;
In accordance with the detected temperature of the substrate, the supply of the processing liquid to the surface of the substrate and the surface of the substrate so as to maintain the processing liquid on the surface side in contact with the surface of the substrate at a predetermined temperature or higher that improves the substrate processing efficiency Controlling either or both of light irradiation to
The substrate processing method according to claim 5, further comprising: 前記処理液を供給する工程よりも前に前記基板を加熱する工程を開始することを特徴とする請求項５又は請求項６に記載の基板処理方法。   The substrate processing method according to claim 5, wherein the step of heating the substrate is started before the step of supplying the processing liquid. 前記処理液を供給する工程では、前記基板を平面内で回転させながら前記基板の表面に前記処理液を供給し、
前記基板を加熱する工程では、前記基板を平面内で回転させながら前記基板の表面に光を照射することを特徴とする請求項５乃至請求項７のいずれか一項に記載の基板処理方法。 In the step of supplying the processing liquid, the processing liquid is supplied to the surface of the substrate while rotating the substrate in a plane,
8. The substrate processing method according to claim 5, wherein, in the step of heating the substrate, the surface of the substrate is irradiated with light while the substrate is rotated in a plane.
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