JP2014181387A - Evaporation source, and vacuum vapor deposition apparatus using the evaporation source - Google Patents

Evaporation source, and vacuum vapor deposition apparatus using the evaporation source Download PDF

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JP2014181387A
JP2014181387A JP2013057011A JP2013057011A JP2014181387A JP 2014181387 A JP2014181387 A JP 2014181387A JP 2013057011 A JP2013057011 A JP 2013057011A JP 2013057011 A JP2013057011 A JP 2013057011A JP 2014181387 A JP2014181387 A JP 2014181387A
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lid
vapor deposition
evaporation source
region
crucible
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Hiroyasu Matsuura
宏育 松浦
Hideaki Minekawa
英明 峰川
Tomohiko Ogata
智彦 尾方
Tatsuya Miyake
竜也 三宅
Akio Yazaki
秋夫 矢崎
Makoto Izaki
良 井崎
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Hitachi High Tech Corp
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Hitachi High Tech Corp
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Abstract

PROBLEM TO BE SOLVED: To provide an evaporation source and a vacuum vapor deposition apparatus which are capable of increasing the degree of freedom in layout of a nozzle and a lid, or capable of preventing nozzle clogging caused by a vapor deposition material or fixation of the lid being a supply port of the vapor deposition material even in high-rate vapor deposition.SOLUTION: An evaporation source has: a crucible equipped with an opening used for inputting a vapor deposition material into a holding part which holds the vapor deposition material inside, a lid for closing the opening, a nozzle from which the vapor deposition material is discharged for a vapor deposition target, and a housing holding the lid and the nozzle; and heating means for heating the crucible. The heating means performs local heating to the crucible, by which a region having higher temperature than temperature at which the vapor deposition material condenses is formed in a region in the crucible closer to the nozzle, and a region having lower temperature than temperature at which the vapor deposition material condenses is formed in a region farther than the region having higher temperature from the nozzle, and the evaporation source has condensation means for condensing the vapor deposition material in the region having lower temperature.

Description

真空下で蒸着材料を加熱して蒸着粒子を発生させ、基板上に蒸着材料の膜を形成するための蒸発源及びその蒸発源を用いた真空蒸着装置に関するものである。   The present invention relates to an evaporation source for heating an evaporation material under vacuum to generate evaporation particles and forming a film of the evaporation material on a substrate, and a vacuum evaporation apparatus using the evaporation source.

有機エレクトロルミネッセンス(有機EL)発光素子10は、図2に示すように、基板5上に陽極11、正孔注入層12、正孔輸送層13、発光層14、電子輸送層15、電子注入層16、陰極17の順に膜形成し、陽極11と陰極17の間に電流を流すことにより発光するものである。また、正孔注入層12から電子注入層16については、有機化合物又は無機化合物を一層毎に真空蒸着より成膜し、陽極上11に積層構造体を形成する。その後、マグネシウム・銀やアルミニウム等の金属膜を真空蒸着で形成し、陰極17を設ける。以上のようにして有機EL発光素子10を形成する。   As shown in FIG. 2, the organic electroluminescence (organic EL) light emitting device 10 includes an anode 11, a hole injection layer 12, a hole transport layer 13, a light emitting layer 14, an electron transport layer 15, and an electron injection layer on a substrate 5. 16 and the cathode 17 are formed in this order, and light is emitted by passing a current between the anode 11 and the cathode 17. For the hole injection layer 12 to the electron injection layer 16, an organic compound or an inorganic compound is formed by vacuum deposition for each layer, and a laminated structure is formed on the anode 11. Thereafter, a metal film such as magnesium / silver or aluminum is formed by vacuum deposition, and the cathode 17 is provided. The organic EL light emitting element 10 is formed as described above.

さらに、基板5上において、事前に薄膜トランジスタ(TFT)9でアレイ回路を形成し、有機EL発光素子10の各陽極11と接続させれば、鮮明かつ高速応答に対応したディスプレイを製作可能である。なお、18は、画素電極であり、
19は、隣接する画素電極と絶縁性を保つ画素分離バンクである。
Furthermore, if an array circuit is formed in advance on the substrate 5 with thin film transistors (TFTs) 9 and connected to the respective anodes 11 of the organic EL light-emitting elements 10, a clear and high-speed display can be manufactured. Reference numeral 18 denotes a pixel electrode.
Reference numeral 19 denotes a pixel separation bank that maintains insulation with adjacent pixel electrodes.

図1に示す本発明の実施形態を利用して一般的な真空蒸着方法の例を示す。真空蒸着装置1は、真空チャンバ2と、真空ポンプ3及び蒸発源4を備えている。真空チャンバ2は、密閉容器で、その中に蒸発源4と蒸着対象の基板5とを配置されている。真空チャンバ2の内部は、基板5に対して成膜する際には、10-3〜10-5Paの真空度を保つように、真空ポンプ3によって真空排気される。また、蒸発源4では蒸着材料を加熱し、気化させ、基板5に対して吹きつけ、成膜する。この際、基板5の大形化に対しては、基板5を回転させる、あるいは基板5又は蒸発源4のいずれかを移動させて成膜を行う。 An example of a general vacuum deposition method using the embodiment of the present invention shown in FIG. 1 will be described. The vacuum deposition apparatus 1 includes a vacuum chamber 2, a vacuum pump 3, and an evaporation source 4. The vacuum chamber 2 is a sealed container, in which an evaporation source 4 and a substrate 5 to be deposited are arranged. The inside of the vacuum chamber 2 is evacuated by the vacuum pump 3 so as to maintain a degree of vacuum of 10 −3 to 10 −5 Pa when forming a film on the substrate 5. In the evaporation source 4, the vapor deposition material is heated and vaporized, and sprayed onto the substrate 5 to form a film. At this time, in order to increase the size of the substrate 5, film formation is performed by rotating the substrate 5 or moving either the substrate 5 or the evaporation source 4.

従来技術としては、蒸着材料を内部に封入したルツボはヒータにより加熱される。これにより、蒸着材料は蒸発し、ルツボの蓋に設けた蒸発口(本願のノズルに相当)から基板に向けて放出させる。この種の蒸発源では、蒸発した蒸着材料が蓋に設けた蒸発口で固まってしまい、塞がってしまう。特許文献1では、これを防ぐために、ルツボ外周面を加熱するヒータの外側面の熱を蓋に伝導させる被加熱部補助部と伝導加熱部を設け、蒸発口の温度を上昇させている。   As a conventional technique, a crucible enclosing a vapor deposition material is heated by a heater. As a result, the vapor deposition material evaporates and is discharged toward the substrate from the evaporation port (corresponding to the nozzle of the present application) provided in the crucible lid. In this type of evaporation source, the evaporated vapor deposition material is solidified at the evaporation port provided in the lid and is blocked. In patent document 1, in order to prevent this, the to-be-heated part auxiliary | assistant part and the conduction heating part which conduct the heat | fever of the outer surface of the heater which heats a crucible outer peripheral surface to a cover are provided, and the temperature of an evaporation port is raised.

特開2004−315898号公報JP 2004-315898 A

従来、特許文献1を代表とするように、ルツボから蒸気を放出する際に、放出口のノズル周辺の温度を高めることにより、蒸着粒子の付着を防止する技術が一般的であった。これらの方法では、ルツボに材料を入れるために外す蓋の温度が高められ、蓋の内部表面に蒸発材料が凝縮・付着しないため蓋は固着しにくくなる。このため、蓋の取外しに支障が生じない。その半面、ルツボ外周面を加熱するヒータの外側面の熱を蓋に伝導させる被加熱部補助部と伝導加熱部を設けなければならず、蓋やノズルのレイアウトに制約が生じることが課題であった。 Conventionally, as represented by Patent Document 1, when vapor is discharged from a crucible, a technique for preventing adhesion of vapor deposition particles by increasing the temperature around the nozzle of the discharge port has been common. In these methods, the temperature of the lid removed to put the material into the crucible is raised, and the evaporating material does not condense and adhere to the inner surface of the lid, so that the lid is difficult to stick. For this reason, there is no problem in removing the lid. On the other hand, it is necessary to provide a heated part auxiliary part and a conduction heating part that conduct the heat of the outer surface of the heater that heats the outer peripheral surface of the crucible to the lid, and the layout and layout of the lid and nozzles are limited. It was.

また、高レートの蒸着では、蓋の内側の空間において充満する蒸発材料は、蒸発時の温度を下回ると凝結し、壁面にしずくが付着しやすくなる。このため、単にノズルや蓋の温度を高めるだけでは、ノズル詰まりや蓋部の固着の課題は解決しない。   Further, in high-rate vapor deposition, the evaporation material that fills the space inside the lid condenses below the temperature during evaporation, and drops tend to adhere to the wall surface. For this reason, simply increasing the temperature of the nozzle or lid does not solve the problem of nozzle clogging or lid fixing.

本発明は、このような実情を鑑みてなされたものであって、第1の目的はノズルと蓋のレイアウトの自由度を高めるのが可能な蒸発源及びその蒸発源を用いた真空蒸着装置を提供することにある。
また、本発明の第2の目的は、高レートの蒸着でも蒸着材料によるノズル詰まりや蒸着材料の供給口である蓋の固着を防ぐことが可能な真空蒸着装置に使用する蒸発源及びその蒸発源を用いた真空蒸着装置を提供することにある。
The present invention has been made in view of such circumstances, and a first object is to provide an evaporation source capable of increasing the degree of freedom of the layout of the nozzle and the lid, and a vacuum evaporation apparatus using the evaporation source. It is to provide.
The second object of the present invention is to provide an evaporation source for use in a vacuum evaporation apparatus capable of preventing clogging of a nozzle due to an evaporation material and adhesion of a lid which is a supply port for the evaporation material even at a high rate, and an evaporation source thereof The object is to provide a vacuum deposition apparatus using the above.

本発明は、上記目的を達成するために、少なくとも下記の特徴と有する。
本発明は、内部に蒸着材料を保持する保持部と、該保持部に前記蒸着材料を投入するための開口部と、該開口部を塞ぐための蓋と、前記蒸着材料が蒸発した蒸気を蒸着対象物に放出するノズルと、該蓋及び該ノズルを保持する筐体とを備えるルツボと、該ルツボを加熱する加熱手段とを有し、真空チャンバ内で用いられる蒸発源において、前記加熱手段により、前記ルツボに対して局部的な加熱を行い、前記ルツボ内部の前記ノズルに近い側に前記蒸着材料が凝縮する温度よりも温度の高い領域を形成し、前記高い領域より前記ノズルから遠い領域に前記蒸着材料が凝縮する温度よりも温度の低い領域を形成し、該低い領域で前記蒸着材料を凝縮させる凝縮手段を有することを特徴とする。
In order to achieve the above object, the present invention has at least the following features.
The present invention vapor-deposits a holding portion for holding a vapor deposition material therein, an opening for introducing the vapor deposition material into the holding portion, a lid for closing the opening, and vapor obtained by evaporating the vapor deposition material. In an evaporation source used in a vacuum chamber, a crucible including a nozzle that discharges to an object, a lid and a casing that holds the nozzle, and a heating unit that heats the crucible. , Locally heating the crucible, forming a region having a temperature higher than the temperature at which the vapor deposition material condenses on the side close to the nozzle inside the crucible, and forming a region farther from the nozzle than the high region. A region having a temperature lower than a temperature at which the vapor deposition material condenses is formed, and condensing means for condensing the vapor deposition material in the low region is provided.

また、前記開口部は、前記筐体に設けられ、前記凝縮手段は、前記ノズル側に向かって複数に分割された分割領域を有する前記蓋と、該分割領域のうち少なくとも1つは前記高い領域を形成し、該分割領域のうち少なくとも1つは前記低い領域を形成することを特徴とする。   The opening is provided in the housing, and the condensing means includes the lid having a divided region divided toward the nozzle side, and at least one of the divided regions is the high region. , And at least one of the divided regions forms the low region.

さらに、前記ルツボは、前記保持部と前記蓋又前記筐体との間に前記開口部を有する前記蓋である中蓋を有し、前記凝縮手段は、前記ノズル側に向かって複数に分割された分割領域を有する前記中蓋と、該分割領域のうち少なくとも1つは前記高い領域を形成し、該分割領域のうち少なくとも1つは前記低い領域を形成することを特徴とする。   Further, the crucible has an inner lid which is the lid having the opening between the holding portion and the lid or the housing, and the condensing means is divided into a plurality toward the nozzle side. The inner lid having the divided areas, at least one of the divided areas forms the high area, and at least one of the divided areas forms the low area.

また、前記加熱手段は、導電体で構成された前記ルツボの筐体と、該筐体、前記高い領域及び前記低い領域のうち少なくとも該筐体と前記高い領域に通電する通電手段とを有することを特徴とする。   Further, the heating means includes a casing of the crucible made of a conductor, and an energizing means for energizing at least the casing and the high area among the casing, the high area, and the low area. It is characterized by.

本発明によれば、蓋にノズルを設ける設計上の制約から解放され、ノズルと蓋のレイアウトの自由度を高めることが可能な蒸発源及びその蒸発源を用いた真空蒸着装置を提供できる。その結果、特に水平方向へ蒸気を放出し、蒸着対象物に成膜を行うサイドデポタイプの蒸発源を実現しやすくなる。
また、本発明によれば、高レートの蒸着でも蒸着材料によるノズル詰まりや蒸着材料の供給口である蓋の固着を防ぐことが可能な蒸発源及びその蒸発源を用いた真空蒸着装置を提供できる。
According to the present invention, it is possible to provide an evaporation source which can be freed from the design restriction of providing a nozzle on the lid and can increase the degree of freedom of the layout of the nozzle and the lid, and a vacuum evaporation apparatus using the evaporation source. As a result, it becomes easy to realize a side-depot type evaporation source that discharges vapor in the horizontal direction and forms a film on the deposition target.
Further, according to the present invention, it is possible to provide an evaporation source that can prevent nozzle clogging due to an evaporation material and adhesion of a lid that is a supply port of the evaporation material even at a high rate, and a vacuum evaporation apparatus using the evaporation source. .

本発明の第1の実施形態を有する蒸発源と、その蒸発源を有する真空蒸着装置の例を示す図である。It is a figure which shows the example of the evaporation source which has the 1st Embodiment of this invention, and the vacuum evaporation system which has the evaporation source. 有機EL素子の構造の模式図を示す図である。It is a figure which shows the schematic diagram of the structure of an organic EL element. 本発明の第1実施形態である蒸発源においてルツボの蓋を3分割にした例を示す図である。It is a figure which shows the example which divided the cover of the crucible into 3 in the evaporation source which is 1st Embodiment of this invention. 本発明の第2実施形態である蒸発源を示し、中蓋を有する蒸発源に本発明を適用した例を示す図である。It is a figure which shows the evaporation source which is 2nd Embodiment of this invention, and shows the example which applied this invention to the evaporation source which has an inner cover. 本発明の第3実施形態である蒸発源を示し、ルツボ自体に通電する蒸発源に本発明を適用した例を示す図である。It is a figure which shows the evaporation source which is 3rd Embodiment of this invention, and shows the example which applied this invention to the evaporation source which energizes crucible itself.

本発明を実施するための最良の形態を図面に基づいて説明する。
(第1実施形態)
図1は、本発明の第1の実施形態を有する蒸発源4と、その蒸発源4を有する真空蒸着装置1の例を示す図である。真空蒸着装置1は真空チャンバ2の内部を真空排気するためのバルブ7と真空ポンプ3が接続されており、10-3〜10-5Paオーダの真空度が維持される。また、真空チャンバ2の内部には蒸発源4が納められ、蒸発源4から放出された蒸着材料21の蒸気をガラス基板5等に吹き付ける。成膜速度の検出には、水晶振動子に蒸着材料を付着させて検出するレートセンサ26を用いる。
The best mode for carrying out the present invention will be described with reference to the drawings.
(First embodiment)
FIG. 1 is a diagram illustrating an example of an evaporation source 4 having the first embodiment of the present invention and a vacuum evaporation apparatus 1 having the evaporation source 4. The vacuum vapor deposition apparatus 1 is connected to a valve 7 for evacuating the inside of the vacuum chamber 2 and a vacuum pump 3, and maintains a vacuum degree of the order of 10 −3 to 10 −5 Pa. The evaporation source 4 is housed inside the vacuum chamber 2, and vapor of the vapor deposition material 21 released from the evaporation source 4 is blown onto the glass substrate 5 or the like. For the detection of the deposition rate, a rate sensor 26 that detects the deposition material by attaching it to a quartz crystal is used.

図1の例では基板5を直立させ、蒸発源4は横方向に蒸気を放出する方式を示すが、蒸気の放出する方向と被蒸着対象の基板5の姿勢は変更しても構わない。   In the example of FIG. 1, the substrate 5 is set upright and the evaporation source 4 emits vapor in the lateral direction. However, the vapor emission direction and the posture of the substrate 5 to be deposited may be changed.

図3に蒸発源4の内部構造の詳細を示す。図3に示す蒸発源4は、図1に示す蒸発源4と、ルツボ22に設けた蓋30の構成が異なり、その他の構成は図1と同じである。
蒸発源4は蒸着材料21を封入し、蒸気の噴出孔であるノズル34を有するルツボ22が収納されている。蒸発源4の内部にはルツボ22を加熱するための加熱手段44が設けられ、加熱手段44の端子50に通電することでルツボ22及び蒸着材料21を加熱する。また、蒸発源4の内部には、ルツボ22及び加熱手段44を取り囲むように断熱手段43が設けられている。これにより、ルツボ22の加熱の効率を向上できる。加熱手段44は抵抗加熱方式、ランプ方式等、方式はいずれでもよい。
FIG. 3 shows details of the internal structure of the evaporation source 4. The evaporation source 4 shown in FIG. 3 is different from the evaporation source 4 shown in FIG. 1 in the configuration of the lid 30 provided on the crucible 22, and the other configurations are the same as those in FIG.
The evaporation source 4 encloses a vapor deposition material 21 and houses a crucible 22 having a nozzle 34 which is a vapor ejection hole. Heating means 44 for heating the crucible 22 is provided inside the evaporation source 4, and the crucible 22 and the vapor deposition material 21 are heated by energizing the terminal 50 of the heating means 44. Further, a heat insulating means 43 is provided inside the evaporation source 4 so as to surround the crucible 22 and the heating means 44. Thereby, the efficiency of heating the crucible 22 can be improved. The heating means 44 may be any system such as a resistance heating system or a lamp system.

蒸着速度の制御は、図1に示すレートセンサ26の検出値を一定に保つように加熱手段44に供給する電力を調整する方法、蒸発源4に取り付けた熱電対25での温度測定値を一定に保つ方法のいずれでもよく、所定時間経過後に基板への蒸気の供給を止めるまたは一定速度で蒸発源4又は基板5を走査させる方法などにより基板5に付着する膜厚を一定にすることができる。   The vapor deposition rate is controlled by adjusting the power supplied to the heating means 44 so as to keep the detection value of the rate sensor 26 shown in FIG. 1 constant, and by measuring the temperature measured by the thermocouple 25 attached to the evaporation source 4 constant. Any method may be used, and the film thickness adhering to the substrate 5 can be made constant by, for example, stopping the supply of vapor to the substrate after a predetermined time has elapsed or scanning the evaporation source 4 or the substrate 5 at a constant speed. .

本実施形態では、ルツボ22の上部に蓋30を設けている。ルツボ22に蒸着材料21を投入する時は、蓋30は開けられ開口部を形成する。基板5に蒸着材料21を蒸着する時は、開口部は蓋30で塞がれる。本実施形態では、また、蓋30は加熱手段44に近い側31と遠い側32とで構成する少なくとも2段階を有する。図1では、2段階に分割した蓋30を示し、図3では3段階に分割した蓋30を示している。   In the present embodiment, a lid 30 is provided on the upper part of the crucible 22. When depositing the vapor deposition material 21 into the crucible 22, the lid 30 is opened to form an opening. When depositing the deposition material 21 on the substrate 5, the opening is closed by the lid 30. In the present embodiment, the lid 30 has at least two stages including a side 31 close to the heating means 44 and a side 32 far from the heating means 44. FIG. 1 shows the lid 30 divided into two stages, and FIG. 3 shows the lid 30 divided into three stages.

この分割により、加熱手段44に隣接して加熱された蓋31の熱は、蓋31と蓋32の間での熱伝導が阻害されるため、加熱手段44に最も近い蓋31が最も高温になり、遠くなるほど温度が低くなる。即ち、蓋31に蒸着材料21が凝縮する温度よりも温度の高い領域が、蓋32に蒸着材料21が凝縮する温度よりも温度の低い領域が、それぞれ形成される。この結果、蓋32では、蒸着材料の凝結55が発生し易くなる。図3では、蓋32bは、蓋32aとの間でも熱伝導が阻害されるため、凝結55の密度が示すように、さらに蒸着材料の凝結55が発生し易くなる。なお、蓋32を蓋31と比べて熱伝導率の低い素材で構成してもよい。   Due to this division, the heat of the lid 31 heated adjacent to the heating means 44 impedes heat conduction between the lid 31 and the lid 32, so the lid 31 closest to the heating means 44 has the highest temperature. The farther away, the lower the temperature. That is, a region having a higher temperature than the temperature at which the vapor deposition material 21 condenses on the lid 31 and a region having a lower temperature than the temperature at which the vapor deposition material 21 condenses on the lid 32 are formed. As a result, condensation 55 of the vapor deposition material is likely to occur in the lid 32. In FIG. 3, since heat conduction is inhibited between the lid 32b and the lid 32a, condensation 55 of the vapor deposition material is more likely to occur as indicated by the density of the condensation 55. The lid 32 may be made of a material having a lower thermal conductivity than the lid 31.

蓋32における凝結により、ルツボ22内の過剰な蒸気が除去されるため、ノズル34及び蓋31では、蒸着中に蒸着材料の凝結55の発生が起こりにくくなる。この作用を促進するため、蓋32周辺又はルツボ22後部からハウジング27に対して蒸着に支障が生じない範囲で、熱リークを起こさせる部材を連結させてもよい。   Since excessive vapor in the crucible 22 is removed by condensation in the lid 32, the nozzle 34 and the lid 31 are less likely to cause condensation 55 of vapor deposition material during vapor deposition. In order to promote this action, a member that causes heat leakage may be connected to the housing 27 from the vicinity of the lid 32 or the rear portion of the crucible 22 within a range that does not hinder vapor deposition.

本実施形態では、蓋31と蓋32が共に取り外せるのは、新規の場合と、蒸着材料21が枯渇した場合のみで、それ以外の場合は蒸着材料21の凝結55したものが固化し、蓋32はルツボ22と接着されてしまう。しかし、ノズル側の蓋31については取外し可能で、開口部が形成されるので、この開口部から材料の追加投入が可能となる。   In the present embodiment, both the lid 31 and the lid 32 can be removed only in a new case and when the vapor deposition material 21 is exhausted. In other cases, the condensed 55 of the vapor deposition material 21 is solidified and the lid 32 is solidified. Is adhered to the crucible 22. However, the nozzle-side lid 31 can be removed and an opening is formed, so that additional material can be charged from the opening.

例えば、有機物以外にAgなどの蒸発する蒸着材料を用いた場合、蓋にノズルを設けている従来方式では、蒸着材料の凝結55の位置が制御できないため、蓋の貼り付きが生じやすかった。しかし、本発明では蓋の一部は必ず脱着が可能になり、材料の蒸着材料21の追加投入を常に行うことができる。
また、ノズル34と蓋30を分離し、位置関係の自由度を増やすことができるようになる。
For example, when a vapor deposition material such as Ag is used in addition to the organic substance, the position of the condensation 55 of the vapor deposition material cannot be controlled in the conventional method in which the nozzle is provided on the lid, and the lid is likely to stick. However, in the present invention, a part of the lid can be detachable without fail, and the additional deposition material 21 can always be added.
In addition, the nozzle 34 and the lid 30 can be separated to increase the degree of freedom in the positional relationship.

以上の説明では、蓋30を蓋31と蓋32の領域に分割したが、蓋32をルツボ22の筐体22fと一体となって又は筐体22fに固定して形成してもよい。   In the above description, the lid 30 is divided into the areas of the lid 31 and the lid 32. However, the lid 32 may be formed integrally with the casing 22f of the crucible 22 or fixed to the casing 22f.

(第2実施形態)
第1実施形態では、蓋32に蒸着材料の凝結55を発生させる方法を示した。図4は、本発明の第2実施形態である蒸発源を示し、ルツボ22の内部にオリフィス39を持つ中蓋33を有する蒸発源に本発明を適用した例を示す図である。第2実施形態は、中蓋の一部に蒸着材料の凝結55を発生させ、第1実施形態と同様な効果を得る方法を示す。
第1実施形態での説明と重複する部分は割愛する。
(Second Embodiment)
In the first embodiment, the method of generating the condensation 55 of the vapor deposition material on the lid 32 has been described. FIG. 4 shows an evaporation source according to the second embodiment of the present invention, and shows an example in which the present invention is applied to an evaporation source having an inner lid 33 having an orifice 39 inside the crucible 22. The second embodiment shows a method for obtaining the same effect as that of the first embodiment by generating the condensation 55 of the vapor deposition material on a part of the inner lid.
The part which overlaps with description in 1st Embodiment is omitted.

中蓋33を設置する場合、例えばCu,Mo,Ta,W、Tiなどの高熱伝導金属材料でルツボ22及び中蓋33を形成すると、ルツボ22内の蒸着中の温度はほぼ均一になりやすい。しかし、加熱手段44の電力を低下させ、降温させる際には、特に中蓋33はルツボ22と接触する周辺部から蒸着材料の凝結55が発生し、これが常温で固着化し、中蓋33がルツボ22に貼りつく原因となる。   In the case where the inner lid 33 is installed, if the crucible 22 and the inner lid 33 are formed of a highly heat conductive metal material such as Cu, Mo, Ta, W, or Ti, the temperature during vapor deposition in the crucible 22 tends to be almost uniform. However, when the electric power of the heating means 44 is reduced and the temperature is lowered, the inner lid 33 generates condensation 55 of the vapor deposition material from the peripheral portion in contact with the crucible 22, which is fixed at room temperature, and the inner lid 33 is fixed to the crucible. Cause sticking to 22.

そこで、第2の実施形態では、中蓋33に対して、蒸着材料21が凝縮する温度よりも温度の高い領域である中央部37と、蒸着材料21が凝縮する温度よりも温度が低い領域である周辺部38とに分割し、特に温度が低くなる加熱手段44から遠い周辺部38で積極的に凝結55を発生させた。   Therefore, in the second embodiment, with respect to the inner lid 33, the central portion 37 is a region having a temperature higher than the temperature at which the vapor deposition material 21 condenses, and the region at a temperature lower than the temperature at which the vapor deposition material 21 condenses. It was divided into a certain peripheral portion 38, and condensation 55 was positively generated in the peripheral portion 38 which is far from the heating means 44 where the temperature is lowered.

これにより、中蓋33と蒸着材料21との間の空間で蒸気圧の低下が発生し、中央部の温度が下がりにくい中蓋37は乾燥状態を保つことが可能となる。また、中蓋33のオリフィス39から放出された蒸気の圧力は低下するので、適切なオリフィスの設定により、蓋30、ノズル34でも凝結55は発生しなくなる。このため、オリフィス39で蒸気の通過を絞り込めば、蓋30の分割を行わなくても、蓋30がルツボ22に固着しないよい条件も作り出すことができる。   As a result, a drop in vapor pressure occurs in the space between the inner lid 33 and the vapor deposition material 21, and the inner lid 37 in which the temperature at the central portion is unlikely to drop can be kept dry. Moreover, since the pressure of the vapor | steam discharge | released from the orifice 39 of the inner cover 33 falls, the condensation 55 will not generate | occur | produce also with the lid | cover 30 and the nozzle 34 by the setting of an appropriate orifice. For this reason, if the passage of the steam is narrowed by the orifice 39, it is possible to create a good condition that the lid 30 does not adhere to the crucible 22 without dividing the lid 30.

本実施形態は、上記で示した高熱伝導金属に限らず他の金属やセラミックを用いてルツボ22及び中蓋33を形成してもよい。   In the present embodiment, the crucible 22 and the inner lid 33 may be formed using not only the high heat conductive metal described above but also other metals or ceramics.

なお、温度を低くする低い領域は、筐体と一体となって又は筐体に固定して設けてもよい。また、ノズル34から又は専用の材料供給手段で蒸着材料21を供給する場合は、ルツボ22の筐体22fに蓋30を設けなくてもよい。   Note that the low region where the temperature is lowered may be provided integrally with the housing or fixed to the housing. Further, when the vapor deposition material 21 is supplied from the nozzle 34 or by a dedicated material supply means, the lid 30 may not be provided on the housing 22f of the crucible 22.

(第3実施形態)
図5は、本発明の第3実施形態である蒸発源を示す図である。第3実施形態は、紙面の奥行方向に伸びる長尺な蒸発源4に適用した例を示す。第1、第2実施形態での説明と重複する部分は割愛する。
(Third embodiment)
FIG. 5 is a diagram showing an evaporation source according to the third embodiment of the present invention. 3rd Embodiment shows the example applied to the elongate evaporation source 4 extended in the depth direction of a paper surface. Portions overlapping with the descriptions in the first and second embodiments are omitted.

長尺な蒸発源では、1個又は複数のノズル34毎に、第1、第2実施形態のような加熱手段44をルツボ22の外部に設けた場合、蒸発源が複雑になり、配線も多数となり大変である。   In the case of a long evaporation source, when the heating means 44 as in the first and second embodiments is provided outside the crucible 22 for each one or a plurality of nozzles 34, the evaporation source becomes complicated and many wirings are required. It becomes difficult.

従って、第3実施形態では、加熱手段をルツボ22の筐体22fで構成し、筐体22fに通電する。第3実施形態では、ルツボ22と、温度の高い領域である蓋31は金属・カーボン等の導電体で製作し、温度の低い領域である蓋32は絶縁体で製作する。   Therefore, in the third embodiment, the heating means is constituted by the casing 22f of the crucible 22, and the casing 22f is energized. In the third embodiment, the crucible 22 and the lid 31 that is a high temperature region are made of a conductor such as metal or carbon, and the lid 32 that is a low temperature region is made of an insulator.

ルツボ22の奥行方向の両端に電流を導入する端子50を設け、その両端の端子50に電流を流し、ルツボ22と蓋31で発熱させる。これにより、蒸発源内部の蒸着材料21は加熱され、蒸発する。一方、絶縁体の蓋32では、熱伝導のみで温度上昇するため、周辺よりも温度が低くなる。即ち、蓋31には蒸着材料が凝縮する温度よりも温度の高い領域が、蓋32には蒸着材料が凝縮する温度よりも温度の低い領域が、それぞれ形成される。
さらに周辺との温度差の拡大を図るために、絶縁体の蓋32を熱伝導率が小さいセラミック材料等で製作することが望ましい。
Terminals 50 for introducing a current are provided at both ends of the crucible 22 in the depth direction, and a current is supplied to the terminals 50 at both ends so that the crucible 22 and the lid 31 generate heat. Thereby, the vapor deposition material 21 inside the evaporation source is heated and evaporated. On the other hand, since the temperature of the insulating lid 32 rises only by heat conduction, the temperature is lower than the surroundings. That is, the lid 31 is formed with a region having a temperature higher than the temperature at which the vapor deposition material is condensed, and the lid 32 is formed with a region having a temperature lower than the temperature at which the vapor deposition material is condensed.
Further, in order to increase the temperature difference from the surroundings, it is desirable to manufacture the insulating lid 32 with a ceramic material having a low thermal conductivity.

このような構成によって、絶縁体の蓋32で積極的に蒸着材料の蒸気の凝結55を起こさせ、ルツボ22内部での蒸気圧を低下させることができ、ノズル34を始め、導体の蓋31での蒸着材料の凝結55の発生が低減する。   With such a configuration, vapor condensation 55 of the vapor deposition material can be positively caused by the insulator lid 32, and the vapor pressure inside the crucible 22 can be reduced, and the nozzle 34 and the conductor lid 31 can be used. The generation of condensation 55 of the vapor deposition material is reduced.

上記説明では蒸発源4は、紙面の奥行方向に伸びる長尺タイプとしたが、奥行き方向の長さが、ノズル方向の長さと同程度である蒸発源であってもよい。   In the above description, the evaporation source 4 is a long type extending in the depth direction of the paper surface. However, the evaporation source 4 may be an evaporation source whose length in the depth direction is substantially the same as the length in the nozzle direction.

上記の第3実施形態では、第1実施形態のタイプを例に説明したが、第2実施形態のタイプにも適用できる。   In the third embodiment, the type of the first embodiment has been described as an example. However, the third embodiment can also be applied to the type of the second embodiment.

本実施形態において、蓋の一部は必ず脱着が可能になり、材料の蒸着材料21の追加投入を常に行うことができる。
また、ノズル34と蓋30を分離し、位置関係の自由度を増やすことができるようになる。
In the present embodiment, a part of the lid can be detachably attached, and the additional material 21 can be constantly added.
In addition, the nozzle 34 and the lid 30 can be separated to increase the degree of freedom in the positional relationship.

以上、本発明の実施形態について述べたが、本発明は記述の実施形態に限定されるものではなく、本発明の技術思想に基づいて各種の変形及び変更が可能となる。   As mentioned above, although embodiment of this invention was described, this invention is not limited to description embodiment, Various deformation | transformation and change are possible based on the technical idea of this invention.

1:真空蒸着装置 2:真空チャンバ
3:真空ポンプ 4:蒸発源
5:基板(ガラス基板) 7:バルブ
9:TFT 10:有機EL発光素子
21:蒸着材料 22:ルツボ
25:熱電対 26:レートセンサ
27:ハウジング 30:ルツボの蓋
31:ルツボの蓋(高温) 32:ルツボの蓋(低温)
33:中蓋 34:ノズル
36:段差 37:ルツボの中蓋(高温)
38:ルツボ中蓋(低温) 39:オリフィス
43:断熱手段 44:加熱手段
50:端子 55:凝縮した蒸着材料
1: Vacuum deposition apparatus 2: Vacuum chamber 3: Vacuum pump 4: Evaporation source 5: Substrate (glass substrate) 7: Valve 9: TFT 10: Organic EL light emitting element 21: Vapor deposition material 22: Crucible 25: Thermocouple 26: Rate Sensor 27: Housing 30: Crucible lid 31: Crucible lid (high temperature) 32: Crucible lid (low temperature)
33: Inner lid 34: Nozzle 36: Step 37: Inner lid of crucible (high temperature)
38: Crucible inner lid (low temperature) 39: Orifice 43: Heat insulation means 44: Heating means 50: Terminal 55: Condensed vapor deposition material

Claims (10)

内部に蒸着材料を保持する保持部と、該保持部に前記蒸着材料を投入するための開口部と、該開口部を塞ぐための蓋と、前記蒸着材料が蒸発した蒸気を蒸着対象物に放出するノズルと、該蓋及び該ノズルを保持する筐体とを備えるルツボと、該ルツボを加熱する加熱手段と有し、真空チャンバ内で用いられる蒸発源において、
前記加熱手段により、前記ルツボに対して局部的な加熱を行い、前記ルツボ内部の前記ノズルに近い側に前記蒸着材料が凝縮する温度よりも温度の高い領域を形成し、前記高い領域より前記ノズルから遠い領域に前記蒸着材料が凝縮する温度よりも温度の低い領域を形成し、該低い領域で前記蒸着材料を凝縮させる凝縮手段を有することを特徴とする蒸発源。
A holding part for holding the vapor deposition material inside, an opening for putting the vapor deposition material into the holding part, a lid for closing the opening, and releasing vapor evaporated from the vapor deposition material to the vapor deposition object An evaporation source used in a vacuum chamber, and a crucible including a nozzle that performs the above operation, a lid and a housing that holds the nozzle, and a heating unit that heats the crucible.
The heating means locally heats the crucible, forms a region having a temperature higher than the temperature at which the vapor deposition material condenses on the side close to the nozzle inside the crucible, and the nozzle from the higher region. An evaporation source comprising a condensing means for forming a region having a temperature lower than a temperature at which the vapor deposition material condenses in a region far from the vapor, and condensing the vapor deposition material in the low region.
前記開口部は、前記筐体に設けられ、
前記凝縮手段は、前記ノズル側に向かって複数に分割された分割領域を有する前記蓋と、該分割領域のうち少なくとも1つは前記高い領域を形成し、該分割領域のうち少なくとも1つは前記低い領域を形成することを特徴とする請求項1記載の蒸発源。
The opening is provided in the housing,
The condensing means includes the lid having a divided area divided into a plurality toward the nozzle side, and at least one of the divided areas forms the high area, and at least one of the divided areas is the 2. The evaporation source according to claim 1, wherein a low region is formed.
前記凝縮手段は、前記高い領域を形成する前記蓋と、前記筐体と一体となって又は前記筐体に固定された前記低い領域とを有し、
前記開口部は、前記高い領域を形成する前記蓋で塞がれることを特徴とする請求項1記載の蒸発源。
The condensing means includes the lid that forms the high region, and the low region that is integrated with or fixed to the housing.
The evaporation source according to claim 1, wherein the opening is closed by the lid that forms the high region.
前記ルツボは、前記保持部と前記蓋又前記筐体との間に前記開口部を有する前記蓋である中蓋を有し、
前記凝縮手段は、前記ノズル側に向かって複数に分割された分割領域を有する前記中蓋と、該分割領域のうち少なくとも1つは前記高い領域を形成し、該分割領域のうち少なくとも1つは前記低い領域を形成することを特徴とする請求項1記載の蒸発源。
The crucible has an inner lid which is the lid having the opening between the holding portion and the lid or the housing;
The condensing means includes the inner lid having a plurality of divided regions divided toward the nozzle side, and at least one of the divided regions forms the high region, and at least one of the divided regions is The evaporation source according to claim 1, wherein the low region is formed.
前記低い領域は、前記筐体と一体となって又は前記筐体に固定さていることを特徴とする請求項4記載の蒸発源。   The evaporation source according to claim 4, wherein the low region is integrated with the housing or fixed to the housing. 前記ルツボ又は前記中蓋は、Cu,Mo,Ta,W 、Tiのいずれかを含む高熱伝導金属材料又はセラミック材料で形成されることを特徴とする請求項4記載の蒸発源。   5. The evaporation source according to claim 4, wherein the crucible or the inner lid is made of a highly heat conductive metal material or ceramic material containing any one of Cu, Mo, Ta, W, and Ti. 前記加熱手段は、導電体で構成された前記ルツボの筐体と、該筐体、前記高い領域及び前記低い領域のうち少なくとも該筐体と前記高い領域に通電する通電手段とを有することを特徴とする請求項1乃至6のいずれかに記載の蒸発源。   The heating means includes a casing of the crucible made of a conductor, and energization means for energizing at least the casing and the high area among the casing, the high area, and the low area. The evaporation source according to any one of claims 1 to 6. 前記導電体又は前記高い領域に前記開口部を設けることを特徴とする請求項7記載の蒸発源。   The evaporation source according to claim 7, wherein the opening is provided in the conductor or the high region. 前記低い領域は、前記高い領域の材料と比べて、絶縁体又は伝導率の低い材料で形成することを特徴とする請求項7記載の蒸発源。   8. The evaporation source according to claim 7, wherein the low region is formed of an insulator or a material having low conductivity as compared with the material of the high region. 請求項1乃至9のいずれかに記載の蒸発源によって前記蒸着対象に前記蒸着材料を蒸着することを特徴とする真空蒸着装置。   A vacuum deposition apparatus, wherein the deposition material is deposited on the deposition target by the evaporation source according to claim 1.
JP2013057011A 2013-03-19 2013-03-19 Evaporation source, and vacuum vapor deposition apparatus using the evaporation source Pending JP2014181387A (en)

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CN110904427A (en) * 2019-12-25 2020-03-24 东莞市天瞳电子有限公司 Water circulation device for vacuum coating equipment
WO2021167145A1 (en) * 2020-02-21 2021-08-26 엘지전자 주식회사 Deposition apparatus system

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107217236A (en) * 2017-05-17 2017-09-29 大连交通大学 A kind of cryogenic vacuum evaporation source
CN107217236B (en) * 2017-05-17 2023-10-20 大连交通大学 Low-temperature vacuum evaporation source
CN110904427A (en) * 2019-12-25 2020-03-24 东莞市天瞳电子有限公司 Water circulation device for vacuum coating equipment
CN110904427B (en) * 2019-12-25 2024-05-14 东莞市天瞳电子有限公司 Water circulation device for vacuum coating equipment
WO2021167145A1 (en) * 2020-02-21 2021-08-26 엘지전자 주식회사 Deposition apparatus system

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