JP2014179598A5 - - Google Patents
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- JP2014179598A5 JP2014179598A5 JP2014027549A JP2014027549A JP2014179598A5 JP 2014179598 A5 JP2014179598 A5 JP 2014179598A5 JP 2014027549 A JP2014027549 A JP 2014027549A JP 2014027549 A JP2014027549 A JP 2014027549A JP 2014179598 A5 JP2014179598 A5 JP 2014179598A5
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- plasma
- film
- processing
- power
- processing method
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- 210000002381 Plasma Anatomy 0.000 claims description 29
- 238000003672 processing method Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 17
- 238000005530 etching Methods 0.000 claims 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 5
- 229920005591 polysilicon Polymers 0.000 claims 5
- 229910052681 coesite Inorganic materials 0.000 claims 3
- 229910052906 cristobalite Inorganic materials 0.000 claims 3
- 229910052904 quartz Inorganic materials 0.000 claims 3
- 239000000377 silicon dioxide Substances 0.000 claims 3
- 235000012239 silicon dioxide Nutrition 0.000 claims 3
- 229910052682 stishovite Inorganic materials 0.000 claims 3
- 229910052905 tridymite Inorganic materials 0.000 claims 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- 230000000051 modifying Effects 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 2
Description
また、本実施形態に係るプラズマ処理方法は、１つの実施形態において、バイアス用電力の周波数が４００ｋＨｚ〜１３．５６ＭＨｚである。 In one embodiment, the plasma processing method according to the present embodiment has a bias power frequency of 400 kHz to 13.56 MHz.
また、下部電極３１には、例えば周波数が１００ＭＨｚ〜１５０ＭＨｚの高周波電力を供給する第１の高周波電源４５ａと、例えば第１の高周波電源４５ａよりも周波数の低い４００ｋＨｚ〜１３．５６ＭＨｚの高周波電力を供給する第２の高周波電源４５ｂと、が夫々整合器４６ａ、４６ｂを介して接続されている。第１の高周波電源４５ａより供給される高周波電力は、後述する処理ガスをプラズマ化する役割を果たし、第２の高周波電源４５ｂより供給される高周波電力は、ウエハＷにバイアス電力を印加することでプラズマ中のイオンをウエハＷ表面に引き込む役割を果たす。以下では、説明の便宜を図るため、第１の高周波電源４５ａより供給される高周波電力をプラズマ生成用電力と呼び、第２の高周波電源４５ｂより供給される高周波電力をバイアス用電力と呼ぶことがあるものとする。 The lower electrode 31 is supplied with a first high-frequency power supply 45a that supplies high-frequency power with a frequency of 100 MHz to 150 MHz, for example, and a high-frequency power with a frequency lower than that of the first high-frequency power supply 45a, for example 400 kHz to 13.56 MHz The second high-frequency power supply 45b to be supplied is connected via matching units 46a and 46b, respectively. The high-frequency power supplied from the first high-frequency power supply 45a plays a role in converting a processing gas, which will be described later, into plasma, and the high-frequency power supplied from the second high-frequency power supply 45b applies bias power to the wafer W. It plays a role of drawing ions in the plasma to the surface of the wafer W. Hereinafter, for convenience of explanation, the high frequency power supplied from the first high frequency power supply 45a is referred to as plasma generation power, and the high frequency power supplied from the second high frequency power supply 45b is referred to as bias power. It shall be.
また、本実施形態によれば、バイアス用電力の周波数が４００ｋＨｚ〜１３．５６ＭＨｚである。その結果、プラズマ中のイオンを効率良く引き込むことができるので、被処理体の被処理面の均一性を更に精度良く維持するようにプロセス条件の設定範囲、つまり、処理装置及び処理のマージン（許容範囲）を広く出来、装置を停止することなく処理することが可能となる。 Further, according to the present embodiment, the frequency of the bias power is 400 kHz to 13.56 MHz. As a result, ions in the plasma can be efficiently drawn, so that the process condition setting range, that is, the processing apparatus and the processing margin (allowable) can be maintained so as to maintain the uniformity of the surface of the object to be processed with higher accuracy. Range) can be widened and processing can be performed without stopping the apparatus.
Claims (13)
前記処理容器の内部に供給された処理ガスのプラズマを生成するための電力であり、周波数が１００ＭＨｚ〜１５０ＭＨｚであるプラズマ生成用電力と、前記プラズマ生成用電力よりも周波数が低い電力であるバイアス用電力とを供給する電力供給工程と、
デューティ比が１０％〜７０％となり、かつ、周波数が５ｋＨｚ〜２０ｋＨｚとなるように前記バイアス用電力をパルス変調しながら、前記処理ガスのプラズマにより被処理体をエッチングするエッチング工程と
を含むことを特徴とするプラズマ処理方法。 A gas supply step for supplying a processing gas into the processing container in which the target object is disposed;
The power for generating plasma of the processing gas supplied to the inside of the processing container, the power for plasma generation having a frequency of 100 MHz to 150 MHz, and the power for bias having a frequency lower than the power for plasma generation A power supply process for supplying power;
An etching step of etching the object to be processed with plasma of the processing gas while pulse-modulating the bias power so that the duty ratio is 10% to 70% and the frequency is 5 kHz to 20 kHz. A plasma processing method.
前記エッチング工程は、前記ＳｉＯ２膜又は前記有機膜をマスクとして前記処理ガスのプラズマにより前記ポリシリコン膜をエッチングすることを特徴とする請求項１〜３のいずれか一つに記載のプラズマ処理方法。 The object to be processed includes a polysilicon film and a SiO2 film or an organic film,
4. The plasma processing method according to claim 1, wherein in the etching step, the polysilicon film is etched by plasma of the processing gas using the SiO 2 film or the organic film as a mask. 5.
前記エッチング工程は、前記有機膜又は前記ポリシリコン膜をマスクとして前記処理ガスのプラズマにより前記ＳｉＯ２膜をエッチングすることを特徴とする請求項１〜３のいずれか一つに記載のプラズマ処理方法。 The object to be processed includes a SiO2 film and an organic film or a polysilicon film,
4. The plasma processing method according to claim 1, wherein in the etching step, the SiO 2 film is etched by plasma of the processing gas using the organic film or the polysilicon film as a mask. 5.
前記エッチング工程は、前記有機膜をマスクとして前記処理ガスのプラズマにより前記積層膜をエッチングすることを特徴とする請求項１〜３のいずれか一つに記載のプラズマ処理方法。 The object to be processed includes a laminated film of a SiO2 film and a polysilicon film, and an organic film,
The plasma processing method according to claim 1, wherein in the etching step, the stacked film is etched by plasma of the processing gas using the organic film as a mask.
前記処理容器の内部を減圧するための排気部と、
前記処理容器の内部に処理ガスを供給するためのガス供給部と、
前記処理容器の内部に処理ガスを供給する工程と、前記処理容器の内部に供給された処理ガスのプラズマを生成するための電力であり、周波数が１００ＭＨｚ〜１５０ＭＨｚであるプラズマ生成用電力と、前記プラズマ生成用電力よりも周波数が低い電力であるバイアス用電力とを供給する工程と、デューティ比が１０％〜７０％となり、かつ、周波数が５ｋＨｚ〜２０ｋＨｚとなるように前記バイアス用電力をパルス変調しながら、前記処理ガスのプラズマにより被処理体をエッチングする工程とを実行する制御部と
を備えたことを特徴とするプラズマ処理装置。 A processing container in which an object is disposed;
An exhaust part for depressurizing the inside of the processing vessel;
A gas supply unit for supplying a processing gas into the processing container;
A step of supplying a processing gas to the inside of the processing container; a power for generating plasma of the processing gas supplied to the inside of the processing container; and a power for generating a plasma having a frequency of 100 MHz to 150 MHz; Supplying a bias power having a frequency lower than that of the plasma generating power; and pulse modulating the bias power so that the duty ratio is 10% to 70% and the frequency is 5 kHz to 20 kHz. And a control unit that executes a step of etching the object to be processed with the plasma of the processing gas.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014027549A JP6267989B2 (en) | 2013-02-18 | 2014-02-17 | Plasma processing method and capacitively coupled plasma processing apparatus |
| US14/182,707 US9653316B2 (en) | 2013-02-18 | 2014-02-18 | Plasma processing method and plasma processing apparatus |
| KR1020140018594A KR102181419B1 (en) | 2013-02-18 | 2014-02-18 | Plasma processing method and plasma processing apparatus |
| TW103105352A TWI606514B (en) | 2013-02-18 | 2014-02-18 | Plasma processing method and plasma processing device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013029298 | 2013-02-18 | ||
| JP2013029298 | 2013-02-18 | ||
| JP2014027549A JP6267989B2 (en) | 2013-02-18 | 2014-02-17 | Plasma processing method and capacitively coupled plasma processing apparatus |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014179598A JP2014179598A (en) | 2014-09-25 |
| JP2014179598A5 true JP2014179598A5 (en) | 2016-12-22 |
| JP6267989B2 JP6267989B2 (en) | 2018-01-24 |
Family
ID=51699207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014027549A Active JP6267989B2 (en) | 2013-02-18 | 2014-02-17 | Plasma processing method and capacitively coupled plasma processing apparatus |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6267989B2 (en) |
| KR (1) | KR102181419B1 (en) |
| TW (1) | TWI606514B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6449674B2 (en) | 2015-02-23 | 2019-01-09 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing apparatus |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3531511B2 (en) * | 1998-12-22 | 2004-05-31 | 株式会社日立製作所 | Plasma processing equipment |
| JP2001085394A (en) * | 1999-09-10 | 2001-03-30 | Hitachi Ltd | Method and device for processing surface |
| US6399507B1 (en) * | 1999-09-22 | 2002-06-04 | Applied Materials, Inc. | Stable plasma process for etching of films |
| CA2529794A1 (en) * | 2003-06-19 | 2004-12-29 | Plasma Control Systems Llc | Plasma production device and method and rf driver circuit with adjustable duty cycle |
| JP5192209B2 (en) * | 2006-10-06 | 2013-05-08 | 東京エレクトロン株式会社 | Plasma etching apparatus, plasma etching method, and computer-readable storage medium |
| US7786019B2 (en) * | 2006-12-18 | 2010-08-31 | Applied Materials, Inc. | Multi-step photomask etching with chlorine for uniformity control |
| JP5029089B2 (en) | 2007-03-26 | 2012-09-19 | 東京エレクトロン株式会社 | Mounting table for plasma processing apparatus and plasma processing apparatus |
| JP2009277770A (en) * | 2008-05-13 | 2009-11-26 | Toshiba Corp | Non-volatile semiconductor memory device and its production process |
| JP2010118549A (en) * | 2008-11-13 | 2010-05-27 | Tokyo Electron Ltd | Plasma etching method and plasma etching device |
| US8658541B2 (en) * | 2010-01-15 | 2014-02-25 | Applied Materials, Inc. | Method of controlling trench microloading using plasma pulsing |
| JP5840973B2 (en) * | 2011-03-03 | 2016-01-06 | 東京エレクトロン株式会社 | Semiconductor device manufacturing method and computer recording medium |
| JP5893864B2 (en) * | 2011-08-02 | 2016-03-23 | 東京エレクトロン株式会社 | Plasma etching method |
-
2014
- 2014-02-17 JP JP2014027549A patent/JP6267989B2/en active Active
- 2014-02-18 KR KR1020140018594A patent/KR102181419B1/en active IP Right Grant
- 2014-02-18 TW TW103105352A patent/TWI606514B/en active
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