JP2014135305A5 - - Google Patents
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- JP2014135305A5 JP2014135305A5 JP2013000778A JP2013000778A JP2014135305A5 JP 2014135305 A5 JP2014135305 A5 JP 2014135305A5 JP 2013000778 A JP2013000778 A JP 2013000778A JP 2013000778 A JP2013000778 A JP 2013000778A JP 2014135305 A5 JP2014135305 A5 JP 2014135305A5
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Description
本発明は、試料がプラズマ処理されるプラズマ処理室と、前記プラズマ処理室内にプラズマを生成させるための第一の高周波電力を供給する第一の高周波電源と、前記試料が載置される試料台と、前記試料台に第二の高周波電力を供給する第二の高周波電源と、前記試料台に印加にされた電圧と電流を検出する検出手段と、前記第一の高周波電源と前記第二の高周波電源とを制御する制御装置とを備えるプラズマ処理装置において、前記制御装置は、前記検出手段により検出された電流波形のデータに基づいて前記第一の高周波電力を制御するとともに前記検出手段により検出された電圧波形のデータに基づいて前記第二の高周波電力を制御することを特徴とする。
The present invention comprises a plasma processing chamber in which the sample is Ru plasma treated, first and first high frequency power supply for supplying a first high-frequency power for generating plasma in the plasma processing chamber, a sample stage where the sample is Ru placed When, a second high frequency power supply for supplying the second high-frequency power to the sample stage, a detector for detecting a voltage and a current which is to applied to the sample stage, wherein the pre-Symbol first high frequency power supply second And a control device for controlling the high-frequency power source, wherein the control device controls the first high-frequency power based on the data of the current waveform detected by the detection means and the detection means. The second high-frequency power is controlled based on the detected voltage waveform data.
また、本発明は、試料がプラズマ処理されるプラズマ処理室と、前記プラズマ処理室内にプラズマを生成させるための第一の高周波電力を供給する第一の高周波電源と、前記試料が載置される試料台と、前記試料台に第二の高周波電力を供給する第二の高周波電源と、前記試料台に印加にされた電圧と電流を検出する検出手段と、前記第一の高周波電源と前記第二の高周波電源とを制御する制御装置とを備えるプラズマ処理装置において、前記検出手段は、検出された電圧波形と検出された電流波形との位相差を求め、前記制御装置は、前記検出手段により検出された電流波形のデータと前記位相差に基づいて前記第一の高周波電力を制御するとともに前記検出手段により検出された電圧波形のデータに基づいて前記第二の高周波電力を制御することを特徴とする。
Further, the present invention comprises a plasma processing chamber in which the sample is Ru plasma treated, first with one of the first high-frequency power source supplying high frequency power to generate plasma in the plasma processing chamber, said sample Ru placed wherein the sample stage, and a second high frequency power supply for supplying the second high-frequency power to the sample stage, a detector for detecting a voltage and a current which is to applied to the sample stage, a pre-Symbol first high frequency power supply In a plasma processing apparatus comprising a control device for controlling a second high-frequency power source, the detection means obtains a phase difference between the detected voltage waveform and the detected current waveform, and the control device comprises the detection means controlling the second high-frequency power based on the data of the voltage waveform detected by said detecting means to control said first high-frequency power based on the phase difference between the data of the detected current waveform by And wherein the Rukoto.
また、本発明は、試料がプラズマ処理されるプラズマ処理室と、前記プラズマ処理室内にプラズマを生成させるための第一の高周波電力を供給する第一の高周波電源と、前記試料が載置される試料台と、前記試料台に第二の高周波電力を供給する第二の高周波電源と、前記試料台に印加にされた電圧と電流を検出する第一の検出手段と、プラズマ発光を検出する第二の検出手段と、前記第一の高周波電源と前記第二の高周波電源とを制御する制御装置とを備えるプラズマ処理装置において、前記制御装置は、前記第一の検出手段により検出された電流波形のデータと前記第二の検出手段により検出されたプラズマ発光データに基づいて前記第一の高周波電力を制御するとともに前記第一の検出手段により検出された電圧波形のデータに基づいて前記第二の高周波電力を制御することを特徴とする。
Further, the present invention comprises a plasma processing chamber in which the sample is Ru plasma treated, first with one of the first high-frequency power source supplying high frequency power to generate plasma in the plasma processing chamber, said sample Ru placed and the sample base, and a second high frequency power supply for supplying the second high-frequency power to the sample stage, a first detecting means for detecting a voltage and a current which is to applied to the sample stage, the detected plasma emission in the plasma processing apparatus comprising a second detecting means, and a pre-SL control device for controlling said the first high frequency power supply a second RF power source, the controller, the current detected by said first detection means based on the data of the detected voltage waveform by said first detection means and controls the first high-frequency power based on plasma emission data detected by the data and the second detection means of the waveform And controlling the second high-frequency power.
Claims (9)
前記制御装置は、前記検出手段により検出された電流波形のデータに基づいて前記第一の高周波電力を制御するとともに前記検出手段により検出された電圧波形のデータに基づいて前記第二の高周波電力を制御することを特徴とするプラズマ処理装置。 A plasma processing chamber in which the sample is Ru plasma treated, first and first high frequency power first high-frequency power source for supplying for generating a plasma in the plasma processing chamber, a sample stage where the sample is Ru is placed, the sample a second high frequency power supply for supplying the second high-frequency power to the base, detection means for detecting a voltage and a current which is to applied to the sample stage, before Symbol a first high-frequency power source and the second high frequency power supply In a plasma processing apparatus comprising a control device for controlling
The control device controls the first high-frequency power based on the data of the current waveform detected by the detection means and supplies the second high-frequency power based on the data of the voltage waveform detected by the detection means. A plasma processing apparatus characterized by controlling.
前記検出手段は、検出された電圧波形と検出された電流波形との位相差を求め、
前記制御装置は、前記検出手段により検出された電流波形のデータと前記位相差に基づいて前記第一の高周波電力を制御するとともに前記検出手段により検出された電圧波形のデータに基づいて前記第二の高周波電力を制御することを特徴とするプラズマ処理装置。 A plasma processing chamber in which the sample is Ru plasma treated, first and first high frequency power first high-frequency power source for supplying for generating a plasma in the plasma processing chamber, a sample stage where the sample is Ru is placed, the sample a second high frequency power supply for supplying the second high-frequency power to the base, detection means for detecting a voltage and a current which is to applied to the sample stage, before Symbol a first high-frequency power source and the second high frequency power supply In a plasma processing apparatus comprising a control device for controlling
The detection means obtains a phase difference between the detected voltage waveform and the detected current waveform,
The control device controls the first high-frequency power based on the current waveform data detected by the detection means and the phase difference , and the second waveform based on the voltage waveform data detected by the detection means. A plasma processing apparatus for controlling the high-frequency power of the plasma.
前記検出された電流波形のデータは、前記検出された電流波形の最大振幅値から最小振幅値を減じた値であり、
前記検出された電圧波形のデータは、前記検出された電圧波形の最大振幅値から最小振幅値を減じた値であることを特徴とするプラズマ処理装置。 In the plasma processing apparatus according to claim 1 or 2,
The detected current waveform data is a value obtained by subtracting the minimum amplitude value from the maximum amplitude value of the detected current waveform,
The detected voltage waveform data is a value obtained by subtracting a minimum amplitude value from a maximum amplitude value of the detected voltage waveform.
前記検出された電流波形のデータは、前記第二の高周波電源の周波数と同じ周波数成分の電流波形であり、
前記検出された電圧波形のデータは、前記第二の高周波電源の周波数と同じ周波数成分の電圧波形であることを特徴とするプラズマ処理装置。 In the plasma processing apparatus according to claim 1 or 2,
The data of the detected current waveform is a current waveform of the same frequency components as the frequency of the second high frequency power supply,
The data of the detected voltage waveform, the plasma processing apparatus which is a voltage waveform having the same frequency components as the frequency of the second high frequency power supply.
前記検出された電流波形のデータは、前記第二の高周波電源の周波数に対して５倍から１０倍の範囲における周波数の電流波形であり、
前記検出された電圧波形のデータは、前記第二の高周波電源の周波数に対して５倍から１０倍の範囲における周波数の電圧波形であることを特徴とするプラズマ処理装置。 In the plasma processing apparatus according to claim 1 or 2,
The detected current waveform data is a current waveform having a frequency in a range of 5 to 10 times the frequency of the second high-frequency power source,
The detected voltage waveform data is a voltage waveform having a frequency in a range of 5 to 10 times the frequency of the second high-frequency power source.
前記制御装置は、前記第一の検出手段により検出された電流波形のデータと前記第二の検出手段により検出されたプラズマ発光データに基づいて前記第一の高周波電力を制御するとともに前記第一の検出手段により検出された電圧波形のデータに基づいて前記第二の高周波電力を制御することを特徴とするプラズマ処理装置。 A plasma processing chamber in which the sample is Ru plasma treated, first and first high frequency power first high-frequency power source for supplying for generating a plasma in the plasma processing chamber, a sample stage where the sample is Ru is placed, the sample A second high-frequency power source for supplying a second high-frequency power to the stage; a first detection means for detecting a voltage and a current applied to the sample stage; a second detection means for detecting plasma emission; in the plasma processing apparatus and a control device for controlling the the previous SL first high-frequency power source and the second high frequency power supply,
The control device controls the first high-frequency power based on the current waveform data detected by the first detection means and the plasma emission data detected by the second detection means, and the first A plasma processing apparatus, wherein the second high-frequency power is controlled based on voltage waveform data detected by a detecting means.
前記第一の検出手段により検出された電流波形のデータは、前記第一の検出手段により検出された電流波形の最大振幅値から最小振幅値を減じた値であり、
前記第一の検出手段により検出された電圧波形のデータは、前記第一の検出手段により検出された電圧波形の最大振幅値から最小振幅値を減じた値であることを特徴とするプラズマ処理装置。 The plasma processing apparatus according to claim 6, wherein
The current waveform data detected by the first detection means is a value obtained by subtracting the minimum amplitude value from the maximum amplitude value of the current waveform detected by the first detection means ,
The voltage waveform data detected by the first detection means is a value obtained by subtracting the minimum amplitude value from the maximum amplitude value of the voltage waveform detected by the first detection means. .
前記第一の検出手段により検出された電流波形のデータは、前記第二の高周波電源の周波数と同じ周波数成分の電流波形であり、
前記第一の検出手段により検出された電圧波形のデータは、前記第二の高周波電源の周波数と同じ周波数成分の電圧波形であることを特徴とするプラズマ処理装置。 The plasma processing apparatus according to claim 6, wherein
Data of the detected current waveform by said first detection means is the second high frequency power supply current waveform of the same frequency components as the frequency of,
The data of the first voltage waveform detected by the detecting means, a plasma processing apparatus which is a voltage waveform having the same frequency components as the frequency of the second high frequency power supply.
前記第一の検出手段により検出された電流波形のデータは、前記第二の高周波電源の周波数に対して５倍から１０倍の範囲における周波数の電流波形であり、
前記第一の検出手段により検出された電圧波形のデータは、前記第二の高周波電源の周波数に対して５倍から１０倍の範囲における周波数の電圧波形であることを特徴とするプラズマ処理装置。 The plasma processing apparatus according to claim 6, wherein
The current waveform data detected by the first detection means is a current waveform having a frequency in the range of 5 to 10 times the frequency of the second high-frequency power source,
The voltage waveform data detected by the first detection means is a voltage waveform having a frequency in the range of 5 to 10 times the frequency of the second high-frequency power supply.
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| US10395895B2 (en) | 2015-08-27 | 2019-08-27 | Mks Instruments, Inc. | Feedback control by RF waveform tailoring for ion energy distribution |
| JP6675260B2 (en) * | 2016-04-27 | 2020-04-01 | 東京エレクトロン株式会社 | Transformer, plasma processing apparatus, and plasma processing method |
| JP7111299B2 (en) * | 2016-11-14 | 2022-08-02 | 国立研究開発法人産業技術総合研究所 | Method and plasma processing apparatus for synthesizing diamond |
| JP7134695B2 (en) * | 2018-04-27 | 2022-09-12 | 東京エレクトロン株式会社 | PLASMA PROCESSING APPARATUS AND POWER CONTROL METHOD |
| CN113169026B (en) * | 2019-01-22 | 2024-04-26 | 应用材料公司 | Feedback loop for controlling pulse voltage waveform |
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