JP2014132603A - Multilayer wiring board - Google Patents

Multilayer wiring board Download PDF

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JP2014132603A
JP2014132603A JP2012249904A JP2012249904A JP2014132603A JP 2014132603 A JP2014132603 A JP 2014132603A JP 2012249904 A JP2012249904 A JP 2012249904A JP 2012249904 A JP2012249904 A JP 2012249904A JP 2014132603 A JP2014132603 A JP 2014132603A
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land
wiring
wiring board
multilayer wiring
substrate
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JP5789872B2 (en
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Atsushi Itabashi
敦 板橋
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Fujikura Ltd
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Fujikura Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a multilayer wiring board which can inhibit increase in wiring resistance and the occurrence of defective wiring.SOLUTION: A multilayer wiring board has a resin base material, a wiring pattern and vias. The wiring pattern has lands provided on the resin base material. Each via has an end connected with the land. At least a part of lateral faces of the land has contact with the via. Accordingly even when the via and the land are misaligned, decrease in contact area between the via and the land can be inhibited.

Description

この発明は、ビアを介して層間接続される多層配線基板に関する。   The present invention relates to a multilayer wiring board that is interlayer-connected through vias.

近年、携帯機器の多機能化に伴い、半導体デバイスの更なる高機能化が求められている。そして、この要求を満たすため、半導体デバイスの配線技術は向上し、配線の微細化が進んでいる。高密度配線技術としては、多層配線基板が知られているが、例えば、引用文献1に記載されているように、一般的には層間を接続するビアの径に対してビアの端部に接続されるランドの径は大きく設定されている。   In recent years, with the increase in the number of functions of portable devices, further enhancement of functions of semiconductor devices has been demanded. In order to satisfy this requirement, the wiring technology of semiconductor devices has been improved and the miniaturization of wiring has been advanced. As a high-density wiring technology, a multilayer wiring board is known. For example, as described in the cited document 1, generally, the connection is made to the end of the via with respect to the diameter of the via connecting the layers. The diameter of the land to be set is set large.

特開2004−31531JP 2004-31531 A

しかしながら、上記引用文献1のようにビアの径に対してランドの径が大きい構造においては、ランド間のスペースが狭くなるため、WLCSP(Wafer Level Chip Size Package)等の挟ピッチ化された電極パッドを有する半導体デバイスを内蔵するような場合には、電極パッドと接続されたビアからの配線の引き回しが困難であるという問題がある。そこで、ランドの径を極力小さくしてランド間のスペースを確保することも考えられるが、ランドの径を小さくすると、ビアとランドの接触面積が小さくなって配線抵抗が増加したり、ランドとビア間の僅かな位置ずれによって配線不良が生じる。   However, in the structure in which the land diameter is larger than the via diameter as in the above cited document 1, since the space between the lands is narrowed, electrode pads with a narrow pitch such as WLCSP (Wafer Level Chip Size Package) are used. In the case of incorporating a semiconductor device having, there is a problem that it is difficult to route wiring from vias connected to electrode pads. Therefore, it is conceivable to reduce the land diameter as much as possible to secure a space between the lands. However, if the land diameter is reduced, the contact area between the via and the land decreases, the wiring resistance increases, and the land and vias increase. Wiring defects occur due to slight misalignment.

この発明は、上述した従来技術による問題点を解消し、配線抵抗の増加や配線不良の発生を抑制できる多層配線基板を提供することを目的とする。   SUMMARY OF THE INVENTION An object of the present invention is to provide a multilayer wiring board capable of solving the above-described problems caused by the prior art and suppressing an increase in wiring resistance and occurrence of wiring defects.

本発明に係る多層配線基板は、樹脂基材と、前記樹脂基材に設けられたランドを有する配線パターンと、端部が前記ランドと接続されるビアとを備えた多層配線基板において、前記ランドの側面の少なくとも一部が前記ビアと接していることを特徴とする。   The multilayer wiring board according to the present invention includes a resin base material, a wiring pattern having a land provided on the resin base material, and a via having an end connected to the land. At least a part of the side surface of this is in contact with the via.

本発明に係る多層配線基板において、ランドの側面の少なくとも一部はビアと接している。したがって、ビアとランドの合わせずれが生じても、ビアとランドの接触面積の低下を抑えることができる。このため、本発明は、配線抵抗の増加や配線不良の発生を抑制できる。   In the multilayer wiring board according to the present invention, at least a part of the side surface of the land is in contact with the via. Therefore, even if a misalignment between the via and the land occurs, a decrease in the contact area between the via and the land can be suppressed. For this reason, this invention can suppress the increase in wiring resistance and generation | occurrence | production of wiring defect.

多層配線基板の一つの実施の形態において、前記ランドは、前記ビアに埋め込まれている。これにより、ビアとランドの接触面積を増やすことができる。また、多層配線基板の一つの実施の形態において、前記ランドの径は、前記ビアの径よりも小さい。これにより、ランドの占有面積を小さくでき、信号用配線間のピッチも小さくできる。したがって、信号用配線を高密度にレイアウトできる。   In one embodiment of the multilayer wiring board, the land is embedded in the via. As a result, the contact area between the via and the land can be increased. In one embodiment of the multilayer wiring board, the diameter of the land is smaller than the diameter of the via. Thereby, the area occupied by the land can be reduced, and the pitch between the signal wirings can also be reduced. Therefore, the signal wiring can be laid out with high density.

また、多層配線基板の一つの実施の形態において、所定ピッチで配列された複数の電極パッドを有する電子部品を内蔵し、前記ビアの前記ランドを接続されていない端部は、前記電極パッドに接続されている。   In one embodiment of the multilayer wiring board, an electronic component having a plurality of electrode pads arranged at a predetermined pitch is incorporated, and an end of the via not connected to the land is connected to the electrode pad. Has been.

本発明によれば、多層配線基板の配線抵抗や配線不良を低減できる。   According to the present invention, wiring resistance and wiring defects of a multilayer wiring board can be reduced.

本発明の第1の実施の形態に係る部品内蔵基板の構造を示す断面図である。It is sectional drawing which shows the structure of the component built-in board | substrate which concerns on the 1st Embodiment of this invention. 第1の実施の形態に係るランド34とビア70との関係を示す上面図である。It is a top view which shows the relationship between the land 34 and the via | veer 70 which concern on 1st Embodiment. 比較例及び第1の実施の形態の一例に係る上面図及び断面図である。It is a top view and sectional view concerning an example of a comparative example and a 1st embodiment. 本発明の第1の実施の形態に係る部品内蔵基板の製造工程を示すフローチャートである。It is a flowchart which shows the manufacturing process of the component built-in board | substrate which concerns on the 1st Embodiment of this invention. 同部品内蔵基板を製造工程の概略を示す断面図である。It is sectional drawing which shows the outline of a manufacturing process of the said board | substrate with a built-in component. 同部品内蔵基板を製造工程の概略を示す断面図である。It is sectional drawing which shows the outline of a manufacturing process of the said board | substrate with a built-in component. 同部品内蔵基板を製造工程の概略を示す断面図である。It is sectional drawing which shows the outline of a manufacturing process of the said board | substrate with a built-in component. 同部品内蔵基板を製造工程の概略を示す断面図である。It is sectional drawing which shows the outline of a manufacturing process of the said board | substrate with a built-in component. 同部品内蔵基板を製造工程の概略を示す断面図である。It is sectional drawing which shows the outline of a manufacturing process of the said board | substrate with a built-in component. 本発明の第2の実施の形態に係る多層配線基板の構造を示す断面図である。It is sectional drawing which shows the structure of the multilayer wiring board based on the 2nd Embodiment of this invention. 本発明の他の実施の形態に係るランド34とビア70との関係を示す断面図である。It is sectional drawing which shows the relationship between the land 34 and via | veer 70 concerning other embodiment of this invention.

以下、添付の図面を参照して、この発明の実施の形態に係る多層配線基板を詳細に説明する。   Hereinafter, a multilayer wiring board according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

[第1の実施の形態]
図1は、本発明の第1の実施の形態に係る部品内蔵基板(多層配線基板)の構造を示す断面図である。第1の実施の形態に係る部品内蔵基板は、図1に示すように、第1プリント配線基材10と、第2プリント配線基材20と、保護層40と、第3プリント配線基材30とを熱圧着(接着層51〜53)により積層した構造を備える。
[First Embodiment]
FIG. 1 is a cross-sectional view showing the structure of a component built-in substrate (multilayer wiring substrate) according to the first embodiment of the present invention. As shown in FIG. 1, the component-embedded substrate according to the first embodiment includes a first printed wiring substrate 10, a second printed wiring substrate 20, a protective layer 40, and a third printed wiring substrate 30. Are laminated by thermocompression bonding (adhesive layers 51 to 53).

接着層51は、第1プリント配線基材10と第2プリント配線基材20との間を接着する。接着層52は、第2プリント配線基材20と保護層40との間を接着する。接着層53は、保護層40と第3プリント配線基材30との間を接着する。保護層40は、加熱圧着時の層間短絡を防止するため、絶縁フィルム(PET,ポリイミド,液晶ポリマー等)により構成される。接着層51〜53は、例えばエポキシ系やアクリル系の接着剤など、有機系接着剤などからなる。   The adhesive layer 51 adheres between the first printed wiring substrate 10 and the second printed wiring substrate 20. The adhesive layer 52 adheres between the second printed wiring board 20 and the protective layer 40. The adhesive layer 53 adheres between the protective layer 40 and the third printed wiring substrate 30. The protective layer 40 is made of an insulating film (PET, polyimide, liquid crystal polymer, etc.) in order to prevent an interlayer short circuit during thermocompression bonding. The adhesive layers 51 to 53 are made of, for example, an organic adhesive such as an epoxy adhesive or an acrylic adhesive.

更に、部品内蔵基板は、図1に示すように、電子部品60、及びビア70を有する。電子部品60は、第2プリント配線基材20に形成された開口部29内に、第1及び第3プリント配線基材10,30に挟まれた状態で内蔵される。ビア70は、積層方向に延びて保護層40を貫通して、電子部品60と第3プリント配線基材30との間に設けられる。ビア70は、低融点の金属フィラーと高融点の金属フィラーを含む合金により構成され、その表面を熱硬化性樹脂により覆われている。ここで、金属フィラーは、例えばニッケル、金、銀、銅、アルミニウム、鉄、錫、ビスマス、インジウム、鉛などである。熱硬化性樹脂は、例えばエポキシ、アクリル、ウレタンなどを主成分とするペーストである。   Further, the component-embedded substrate has an electronic component 60 and a via 70 as shown in FIG. The electronic component 60 is housed inside the opening 29 formed in the second printed wiring substrate 20 in a state sandwiched between the first and third printed wiring substrates 10 and 30. The via 70 extends in the stacking direction and penetrates the protective layer 40 and is provided between the electronic component 60 and the third printed wiring substrate 30. The via 70 is made of an alloy including a low melting point metal filler and a high melting point metal filler, and the surface thereof is covered with a thermosetting resin. Here, the metal filler is, for example, nickel, gold, silver, copper, aluminum, iron, tin, bismuth, indium, lead or the like. The thermosetting resin is a paste mainly composed of epoxy, acrylic, urethane, or the like.

第1〜第3プリント配線基材10〜30は、各々、図1に示すように、第1〜第3樹脂基材11〜31、及び信号用配線12〜32を有する。信号用配線12は、第1樹脂基材11の下面(片面)に形成される。信号用配線22は、第2樹脂基材21の下面及び上面(両面)に形成される。信号用配線32は、第3樹脂基材31の下面及び上面(両面)に形成される。   As shown in FIG. 1, each of the first to third printed wiring base materials 10 to 30 includes first to third resin base materials 11 to 31 and signal wirings 12 to 32. The signal wiring 12 is formed on the lower surface (one surface) of the first resin base material 11. The signal wiring 22 is formed on the lower surface and the upper surface (both surfaces) of the second resin base material 21. The signal wiring 32 is formed on the lower surface and the upper surface (both surfaces) of the third resin base material 31.

第1〜第3樹脂基材11〜31は、樹脂フィルムにより構成される。ここで、樹脂フィルムは、例えばポリイミド、ポリオレフィン、液晶ポリマー、熱硬化性のエポキシ樹脂等である。信号用配線12〜32は、パターン形成された銅箔などの導電材により構成される。   The 1st-3rd resin base materials 11-31 are comprised with the resin film. Here, the resin film is, for example, polyimide, polyolefin, liquid crystal polymer, thermosetting epoxy resin, or the like. The signal wirings 12 to 32 are made of a conductive material such as a patterned copper foil.

また、第3プリント配線基材30は、図1に示すように、第3樹脂基材31を貫通するビアホールH内に充填された信号用ビア33、及び信号用配線32の先端に設けられたランド34を有する。信号用ビア33は、第3樹脂基材31の両面に形成された信号用配線32に電気的に接続される。信号用ビア33は、めっきにより形成される。ランド34は、第3樹脂基材31の下面に設けられている。ここで、図2は第1の実施の形態に係るランド34とビア70との関係を示す上面図である。図2に示すように、ランド34の径はビア70の径よりも小さく、ランド34はビア70に埋め込まれている。したがって、ランド34はその下面だけでなく、側面でもビア70と接している。ランド34は、パターン形成された銅箔などの導電材により構成され、ビア70と合金を形成している。   Further, as shown in FIG. 1, the third printed wiring substrate 30 is provided at the tip of the signal via 33 and the signal wiring 32 filled in the via hole H penetrating the third resin substrate 31. It has a land 34. The signal via 33 is electrically connected to the signal wiring 32 formed on both surfaces of the third resin base material 31. The signal via 33 is formed by plating. The land 34 is provided on the lower surface of the third resin base material 31. Here, FIG. 2 is a top view showing the relationship between the land 34 and the via 70 according to the first embodiment. As shown in FIG. 2, the diameter of the land 34 is smaller than the diameter of the via 70, and the land 34 is embedded in the via 70. Therefore, the land 34 is in contact with the via 70 not only on the lower surface but also on the side surface. The land 34 is made of a conductive material such as a patterned copper foil, and forms an alloy with the via 70.

電子部品60は、WLP(Wafer Level Package)により構成される。電子部品60の上面には、図1に示すように、電極61、樹脂62が設けられる。電極61は、ビア70の下端と電気的に接続される。電極61は銅などの導電材により構成され、ビア70と合金を形成している。樹脂62は、電極61を露出させるように電子部品60の上面を覆う。   The electronic component 60 is configured by WLP (Wafer Level Package). As shown in FIG. 1, an electrode 61 and a resin 62 are provided on the upper surface of the electronic component 60. The electrode 61 is electrically connected to the lower end of the via 70. The electrode 61 is made of a conductive material such as copper, and forms an alloy with the via 70. The resin 62 covers the upper surface of the electronic component 60 so that the electrode 61 is exposed.

次に、図3を参照して、第1の実施の形態の効果を比較例と比較して説明する。図3(a)は、比較例のビア70、信号用配線32、及びランド34を示す上面図、図3(b)は、図3(a)のA−A’断面図であり、図3(c)は、第1の実施の形態のビア70、信号用配線32、及びランド34の一例を示す上面図、図3(d)は、図3(c)のB−B’断面図である。   Next, the effect of the first embodiment will be described in comparison with a comparative example with reference to FIG. 3A is a top view showing the via 70, the signal wiring 32, and the land 34 of the comparative example, and FIG. 3B is a cross-sectional view taken along the line AA ′ of FIG. FIG. 3C is a top view illustrating an example of the via 70, the signal wiring 32, and the land 34 according to the first embodiment, and FIG. 3D is a cross-sectional view taken along the line BB ′ in FIG. is there.

図3(a)及び図3(b)に示すように、比較例において、ビア70はランド34の下面に接し、ランド34の径はビア70の径よりも大きい。したがって、ランド34間の間隔が狭くなって、配線可能な信号用配線32の数が少なくなってしまう。   As shown in FIGS. 3A and 3B, in the comparative example, the via 70 is in contact with the lower surface of the land 34, and the diameter of the land 34 is larger than the diameter of the via 70. Therefore, the interval between the lands 34 is narrowed, and the number of signal wirings 32 that can be wired is reduced.

例えば、図3(a)に示す比較例において、ビア70のピッチPを300μm、ランド34の径R1を170μm、ビア70の径R2を100μmとすると、隣接ランド34間の配線可能幅D1は300−170=130μmである。従って、信号用配線32の幅W1を40μm、配線間に最低必要な間隔を40μmとすると、ランド34間には、1本の信号用配線32しか形成することができない。
これに対して、図3(c)及び図3(d)に示すように、第1の実施の形態の一例においては、ランド34の径R1′がビア70の径R2よりも小さい。上述の例によれば、隣接ビア70間の配線可能幅D2は、300−100=200μmとなる。このため、信号用配線32の幅W1を40μm、配線間に最低必要な間隔を40μmとすると、ランド34間には、2本の信号用配線32を配置することができ、信号用配線32を比較例よりも高密度にレイアウトすることができる。
For example, in the comparative example shown in FIG. 3A, if the pitch P of the vias 70 is 300 μm, the diameter R1 of the lands 34 is 170 μm, and the diameter R2 of the vias 70 is 100 μm, the wireable width D1 between the adjacent lands 34 is 300. −170 = 130 μm. Therefore, if the width W1 of the signal wiring 32 is 40 μm and the minimum necessary interval between the wirings is 40 μm, only one signal wiring 32 can be formed between the lands 34.
On the other hand, as shown in FIGS. 3C and 3D, in one example of the first embodiment, the diameter R1 ′ of the land 34 is smaller than the diameter R2 of the via 70. According to the above example, the routable width D2 between the adjacent vias 70 is 300−100 = 200 μm. For this reason, if the width W1 of the signal wiring 32 is 40 μm and the minimum necessary interval between the wirings is 40 μm, two signal wirings 32 can be arranged between the lands 34, and the signal wiring 32 The layout can be laid out more densely than the comparative example.

以上の相違点により、比較例よりも第1の実施の形態の方が、同一層に配置可能な配線数が多い。このため、図3(b)及び図3(d)に示すように、比較例では信号用配線32の配置に3層必要であったのに対し、第1の実施の形態では、信号用配線32の配置に2層あれば足りることになる。   Due to the above differences, the first embodiment has more wires that can be arranged in the same layer than the comparative example. For this reason, as shown in FIGS. 3B and 3D, in the comparative example, three layers are required for the arrangement of the signal wiring 32, whereas in the first embodiment, the signal wiring is used. Two layers are sufficient for the arrangement of 32.

一方、第1の実施の形態のように、ランド34の径R1′がビア70の径R2よりも小さくなると、ビア70とランド34の接触面積が小さくなると共に、ビア70とランド34との位置合わせズレが生じた場合には、配線不良になる可能性が高くなる。この点、第1の実施の形態では、ランド34がビア70の上端に埋め込まれており、ランド34の下面のみならず、ランド34の側面もT1の幅でビア70と接している。このため、接触面積を大きくすることができ、且つビア70とランド34の合わせズレが生じたとしても、ビア70とランド34の接触面積の低下及び配線不良を抑えることができる。   On the other hand, when the diameter R1 ′ of the land 34 is smaller than the diameter R2 of the via 70 as in the first embodiment, the contact area between the via 70 and the land 34 is reduced, and the positions of the via 70 and the land 34 are reduced. When misalignment occurs, there is a high possibility of wiring failure. In this regard, in the first embodiment, the land 34 is embedded in the upper end of the via 70, and not only the lower surface of the land 34 but also the side surface of the land 34 is in contact with the via 70 with a width of T1. For this reason, the contact area can be increased, and even if a misalignment between the via 70 and the land 34 occurs, a decrease in the contact area between the via 70 and the land 34 and wiring defects can be suppressed.

次に、図4に沿って、図5〜図9を参照しながら第1の実施の形態に係る部品内蔵基板の製造方法について説明する。図4は、部品内蔵基板の製造工程を示すフローチャートである。図5〜図9は、部品内蔵基板を製造工程の概略を示す断面図である。   Next, a method for manufacturing the component-embedded substrate according to the first embodiment will be described along FIG. 4 with reference to FIGS. FIG. 4 is a flowchart showing manufacturing steps of the component built-in substrate. 5 to 9 are cross-sectional views showing an outline of the manufacturing process of the component-embedded substrate.

先ず、図5に示すように、第1〜第3プリント配線基材10〜30を準備する(図4のS101)。ここで、第1〜第3プリント配線基材10〜30の信号用配線12〜32は、サブトラクティブ法、又はセミアディティブ法により形成される。また、第2プリント配線基材20の開口部29は、レーザ加工、ドリル加工、金型加工により形成される。次に、図6に示すように、第1プリント配線基材10の上面に接着層51を積層させ、第2プリント配線基材20の上面に接着層52、保護層40、及び接着層53を積層させる(図4のS102)。   First, as shown in FIG. 5, the 1st-3rd printed wiring base materials 10-30 are prepared (S101 of FIG. 4). Here, the signal wirings 12 to 32 of the first to third printed wiring substrates 10 to 30 are formed by a subtractive method or a semi-additive method. In addition, the opening 29 of the second printed wiring board 20 is formed by laser processing, drilling, or die processing. Next, as shown in FIG. 6, the adhesive layer 51 is laminated on the upper surface of the first printed wiring substrate 10, and the adhesive layer 52, the protective layer 40, and the adhesive layer 53 are formed on the upper surface of the second printed wiring substrate 20. They are stacked (S102 in FIG. 4).

続いて、図7に示すように、接着層51の上面に電子部品60を実装する(図4のS103)。次に、図8に示すように、電子部品60を開口部29に収容するように、接着層51の上面に第2プリント配線基材20を積層させる(図4のS104)。   Subsequently, as shown in FIG. 7, the electronic component 60 is mounted on the upper surface of the adhesive layer 51 (S103 in FIG. 4). Next, as shown in FIG. 8, the second printed wiring substrate 20 is laminated on the upper surface of the adhesive layer 51 so that the electronic component 60 is accommodated in the opening 29 (S104 in FIG. 4).

続いて、レーザ加工により、保護層40を貫通するホールH’を形成する。次に、図9に示すように、ホールH’を導電ペーストにて埋めることによってビア70を形成する(図4のS105)。そして、第3プリント配線基材30を接着層53の上面に積層させ、第1〜第3プリント配線基材10〜30を加熱圧着させる(図4のS106)。これにより、ランド34がビア70の上端部に埋め込まれるように第1〜第3プリント配線基材10〜30が圧着され、図1に示す部品内蔵基板が製造される。このランド34とビア70を圧着させる際に、ビア70内の低融点の金属フィラー及び熱硬化性樹脂は融解する。融解した低融点の金属フィラーは、ランド34の銅と合金化する。   Subsequently, a hole H ′ penetrating the protective layer 40 is formed by laser processing. Next, as shown in FIG. 9, vias 70 are formed by filling the holes H 'with a conductive paste (S105 in FIG. 4). And the 3rd printed wiring base material 30 is laminated | stacked on the upper surface of the contact bonding layer 53, and the 1st-3rd printed wiring base materials 10-30 are heat-pressed (S106 of FIG. 4). Thereby, the first to third printed wiring bases 10 to 30 are pressure-bonded so that the land 34 is embedded in the upper end portion of the via 70, and the component built-in substrate shown in FIG. 1 is manufactured. When the land 34 and the via 70 are pressure-bonded, the low melting point metal filler and the thermosetting resin in the via 70 are melted. The molten low melting point metal filler is alloyed with the copper of the land 34.

[第2の実施の形態]
次に、図10を参照して、本発明の第2の実施の形態に係る多層配線基板80について説明する。第1の実施の形態は、電子部品60を内蔵した部品内蔵基板であったが、本実施の形態の多層配線基板80は、図10に示すように、電子部品90と実装基板100と間に設けられ、それらを電気的に接続するインターポーザとして機能する。
[Second Embodiment]
Next, a multilayer wiring board 80 according to a second embodiment of the present invention will be described with reference to FIG. Although the first embodiment is a component built-in board in which the electronic component 60 is built, the multilayer wiring board 80 of the present embodiment is provided between the electronic component 90 and the mounting board 100 as shown in FIG. It is provided and functions as an interposer that electrically connects them.

多層配線基板80は、図10に示すように、第1プリント配線基材110と、保護層200と、第2プリント配線基材120と、保護層210と、第3プリント配線基材130とを熱圧着(接着層141〜144)により積層した構造を備える。   As shown in FIG. 10, the multilayer wiring board 80 includes a first printed wiring base 110, a protective layer 200, a second printed wiring base 120, a protective layer 210, and a third printed wiring base 130. A structure laminated by thermocompression bonding (adhesive layers 141 to 144) is provided.

接着層141は、第1プリント配線基材110と保護層200との間を接着する。接着層142は、保護層200と第2プリント配線基材120との間を接着する。接着層143は、第2プリント配線基材120と保護層210との間を接着する。接着層144は、保護層210と第3プリント配線基材130との間を接着する。なお、保護層200,210及び接着層141〜144は、第1の実施の形態の保護層40及び接着層51〜53と同様の材料にて構成される。   The adhesive layer 141 adheres between the first printed wiring substrate 110 and the protective layer 200. The adhesive layer 142 adheres between the protective layer 200 and the second printed wiring substrate 120. The adhesive layer 143 adheres between the second printed wiring substrate 120 and the protective layer 210. The adhesive layer 144 adheres between the protective layer 210 and the third printed wiring substrate 130. The protective layers 200 and 210 and the adhesive layers 141 to 144 are made of the same material as the protective layer 40 and the adhesive layers 51 to 53 of the first embodiment.

更に、多層配線基板80は、図10に示すように、ビア150,160を有する。ビア150,160は、積層方向に延びる。ビア150は、保護層200を貫通して、第1プリント配線基材110と第2プリント配線基材120との間に設けられる。ビア160は、保護層210を貫通して、第2プリント配線基材120と第3プリント配線基材130との間に設けられる。なお、ビア150,160は、第1の実施の形態のビア70と同様の材料にて構成される。   Furthermore, the multilayer wiring board 80 has vias 150 and 160 as shown in FIG. The vias 150 and 160 extend in the stacking direction. The via 150 is provided between the first printed wiring base 110 and the second printed wiring base 120 through the protective layer 200. The via 160 is provided between the second printed wiring substrate 120 and the third printed wiring substrate 130 through the protective layer 210. The vias 150 and 160 are made of the same material as the via 70 of the first embodiment.

第1〜第3プリント配線基材110〜130は、各々、図10に示すように、第1〜第3樹脂基材111〜131、信号用配線112〜132、及び信号用ビア113〜133を有する。信号用配線112は、第1樹脂基材111の下面及び上面(両面)に形成される。信号用配線122は、第2樹脂基材121の下面及び上面(両面)に形成される。信号用配線132は、第3樹脂基材131の下面及び上面(両面)に形成される。信号用ビア113〜133は、各々、第1〜第3樹脂基材111〜131を貫通するビアホールH1〜H3内に充填される。信号用ビア113〜133は、各々、第1〜第3樹脂基材111〜131の両面に形成された信号用配線112〜132に電気的に接続される。なお、第1〜第3樹脂基材111〜131、信号用配線112〜132、及び信号用ビア113〜133は、第1の実施の形態の第1〜第3樹脂基材11〜31、信号用配線12〜32、及び信号用ビア33と同様の材料にて構成される。   As shown in FIG. 10, the first to third printed wiring substrates 110 to 130 include first to third resin substrates 111 to 131, signal wirings 112 to 132, and signal vias 113 to 133, respectively. Have. The signal wiring 112 is formed on the lower surface and the upper surface (both surfaces) of the first resin base material 111. The signal wiring 122 is formed on the lower surface and the upper surface (both surfaces) of the second resin base 121. The signal wiring 132 is formed on the lower surface and the upper surface (both surfaces) of the third resin base material 131. The signal vias 113 to 133 are filled in the via holes H1 to H3 penetrating the first to third resin base materials 111 to 131, respectively. The signal vias 113 to 133 are electrically connected to signal wirings 112 to 132 formed on both surfaces of the first to third resin base materials 111 to 131, respectively. The first to third resin base materials 111 to 131, the signal wirings 112 to 132, and the signal vias 113 to 133 are the first to third resin base materials 11 to 31 of the first embodiment. The wirings 12 to 32 and the signal vias 33 are made of the same material.

また、第2、第3プリント配線基材120、130は、各々、図10に示すように、信号用配線122,132の先端に設けられたランド124,134を有する。ランド124,134は、第2,第3樹脂基材121,131の下面に設けられている。具体的に、ランド124,134の径は、各々ビア150,160の径よりも小さく、ランド124,134はビア150,160に埋め込まれている。したがって、ランド124,134はその下面だけでなく、側面でもビア150,160と接している。なお、ランド124,134は、第1の実施の形態のランド34と同様の材料にて構成される。   The second and third printed wiring substrates 120 and 130 have lands 124 and 134 provided at the tips of the signal wirings 122 and 132, respectively, as shown in FIG. The lands 124 and 134 are provided on the lower surfaces of the second and third resin base materials 121 and 131. Specifically, the diameters of the lands 124 and 134 are smaller than the diameters of the vias 150 and 160, respectively, and the lands 124 and 134 are embedded in the vias 150 and 160. Therefore, the lands 124 and 134 are in contact with the vias 150 and 160 not only on the lower surface but also on the side surfaces. The lands 124 and 134 are made of the same material as that of the land 34 according to the first embodiment.

更に、第1、第3プリント配線基材110、130は、各々、図10に示すように、バンプ115,135、及びソルダーレジスト116,136を有する。バンプ115は、信号用配線112の下面に設けられ、実装基板100と電気的に接続される。バンプ135は、信号用配線132の上面に設けられ、電子部品90の電極91に電気的に接続される。ソルダーレジスト116は、第1樹脂基材111の下面及び信号用配線112の下面を覆う。ソルダーレジスト136は、第3樹脂基材131の上面及び信号用配線132の上面を覆う。   Further, the first and third printed wiring substrates 110 and 130 have bumps 115 and 135 and solder resists 116 and 136, respectively, as shown in FIG. The bump 115 is provided on the lower surface of the signal wiring 112 and is electrically connected to the mounting substrate 100. The bump 135 is provided on the upper surface of the signal wiring 132 and is electrically connected to the electrode 91 of the electronic component 90. The solder resist 116 covers the lower surface of the first resin substrate 111 and the lower surface of the signal wiring 112. The solder resist 136 covers the upper surface of the third resin base 131 and the upper surface of the signal wiring 132.

以上、第2の実施の形態に係る多層配線基板80は、第1の実施の形態と同様の特徴を有するビア150,160及びランド124,134により、第1の実施の形態と同様の効果を奏する。   As described above, the multilayer wiring board 80 according to the second embodiment has the same effect as that of the first embodiment by the vias 150 and 160 and the lands 124 and 134 having the same characteristics as those of the first embodiment. Play.

以上、発明の実施の形態を説明したが、本発明はこれらに限定されるものではなく、発明の趣旨を逸脱しない範囲内において、種々の変更、追加等が可能である。例えば、図11(a)〜(c)に示すように、ランド34の側面の一部のみがビア70に接していてもよい。図11(a)に示す例においては、ランド34の側面の一部及び下面の一部のみがビア70に接する。図11(b)に示す例においては、ランド34の側面の一部及び下面全体のみがビア70に接する。図11(c)に示す例においては、ランド34の下面全体及び側面の下部のみがビア70に接する。   Although the embodiments of the invention have been described above, the present invention is not limited to these embodiments, and various modifications and additions can be made without departing from the spirit of the invention. For example, as shown in FIGS. 11A to 11C, only a part of the side surface of the land 34 may be in contact with the via 70. In the example shown in FIG. 11A, only a part of the side surface and a part of the lower surface of the land 34 are in contact with the via 70. In the example shown in FIG. 11B, only a part of the side surface and the entire lower surface of the land 34 are in contact with the via 70. In the example shown in FIG. 11C, the entire lower surface of the land 34 and only the lower part of the side surface are in contact with the via 70.

10〜30…第1〜第3プリント配線基材、 11〜31…第1〜第3樹脂基材、 12〜32…信号用配線、 29…開口部、 33…信号用ビア、 34…ランド、 40…保護層、 51〜53…接着層、 60…電子部品、 61…電極、 70…ビア、 80…多層配線基板、 90…電子部品、 91…電極、 100…実装基板、 110〜130…第1〜第3プリント配線基材、 111〜131…第1〜第3樹脂基材、 112〜132…信号用配線、 113〜133…信号用ビア、 124,134…ランド、 115,135…バンプ、 116,136…ソルダーレジスト、 141〜144…接着層、 150,160…ビア、 200,210…保護層。   DESCRIPTION OF SYMBOLS 10-30 ... 1st-3rd printed wiring base material, 11-31 ... 1st-3rd resin base material, 12-32 ... Signal wiring, 29 ... Opening part, 33 ... Signal via, 34 ... Land, DESCRIPTION OF SYMBOLS 40 ... Protective layer, 51-53 ... Adhesion layer, 60 ... Electronic component, 61 ... Electrode, 70 ... Via, 80 ... Multi-layer wiring board, 90 ... Electronic component, 91 ... Electrode, 100 ... Mounting substrate, 110-130 ... No. 1st-3rd printed wiring base material, 111-131 ... 1st-3rd resin base material, 112-132 ... Signal wiring, 113-133 ... Signal via, 124, 134 ... Land, 115, 135 ... Bump, 116, 136 ... Solder resist, 141-144 ... Adhesive layer, 150, 160 ... Via, 200, 210 ... Protective layer.

Claims (4)

樹脂基材と、
前記樹脂基材に設けられたランドを有する配線パターンと、
端部が前記ランドと接続されるビアと
を備えた多層配線基板において、
前記ランドの側面の少なくとも一部が前記ビアと接している
ことを特徴とする多層配線基板。
A resin substrate;
A wiring pattern having lands provided on the resin substrate;
In a multilayer wiring board provided with vias whose ends are connected to the lands,
A multilayer wiring board, wherein at least a part of a side surface of the land is in contact with the via.
前記ランドは、前記ビアに埋め込まれている
ことを特徴とする請求項1記載の多層配線基板。
The multilayer wiring board according to claim 1, wherein the land is embedded in the via.
前記ランドの径は、前記ビアの径よりも小さい
ことを特徴とする請求項1又は請求項2記載の多層配線基板。
The multilayer wiring board according to claim 1, wherein a diameter of the land is smaller than a diameter of the via.
所定ピッチで配列された複数の電極パッドを有する電子部品を内蔵し、
前記ビアの前記ランドを接続されていない端部は、前記電極パッドに接続されている
ことを特徴とする請求項1乃至請求項3記載の多層配線基板。


Built-in electronic component having a plurality of electrode pads arranged at a predetermined pitch,
4. The multilayer wiring board according to claim 1, wherein an end of the via that is not connected to the land is connected to the electrode pad. 5.


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