JP2014036204A - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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JP2014036204A
JP2014036204A JP2012178371A JP2012178371A JP2014036204A JP 2014036204 A JP2014036204 A JP 2014036204A JP 2012178371 A JP2012178371 A JP 2012178371A JP 2012178371 A JP2012178371 A JP 2012178371A JP 2014036204 A JP2014036204 A JP 2014036204A
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substrate
light
holding member
held
projector
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JP6000743B2 (en
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Kazuhiro Aiura
浦 一 博 相
Kiko Ito
藤 規 宏 伊
Yusuke Hashimoto
本 佑 介 橋
Takashi Nagai
井 高 志 永
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Tokyo Electron Ltd
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Priority to KR1020130089468A priority patent/KR101917889B1/en
Priority to US13/956,705 priority patent/US8865483B2/en
Priority to TW102128000A priority patent/TWI557824B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PROBLEM TO BE SOLVED: To enhance the degree-of-freedom of arrangement of a device for determining the holding state of a substrate, and the degree-of-freedom of the execution time of holding state determination.SOLUTION: A substrate processing apparatus includes projectors (61, 71) for irradiating detection light toward a region where a substrate may exist when the substrate is held by a substrate holding member, and optical receivers (62, 72) receiving the detection light irradiated from the projector. Optical paths (64, 74) of the detection light from the projector toward the optical receiver pass through the components of the substrate processing apparatus, e.g., substrate peripheral members (20, 30, 31, 34, 38, and the like), provided so as to be located around a substrate held by the substrate holding member. The detection light has a wavelength that passes through the substrate peripheral members but does not pass through the substrate.

Description

本発明は、基板を基板保持部により保持した状態で基板に所定の処理を施す基板処理装置において、基板保持部による基板の保持状態を光学的に検出する技術に関するものである。   The present invention relates to a technique for optically detecting a holding state of a substrate by a substrate holding unit in a substrate processing apparatus that performs a predetermined process on the substrate while the substrate is held by a substrate holding unit.

半導体デバイスの製造のための様々な工程の一つとして、半導体ウエハ等の基板を鉛直軸線回りに回転させて、回転する基板に処理液を供給することにより基板を処理する液処理工程がある。この液処理工程を実施する際に、基板保持部材により基板が適切に保持されておらず、例えば基板が基板保持部材に乗り上げていたりすると、回転に伴い基板が基板保持部材から脱落して、基板が破損するおそれがある。このため、処理の開始前に基板が適切に保持されていることを確認する必要がある。   As one of various processes for manufacturing a semiconductor device, there is a liquid processing process for processing a substrate by rotating a substrate such as a semiconductor wafer around a vertical axis and supplying a processing liquid to the rotating substrate. When performing this liquid processing step, if the substrate is not properly held by the substrate holding member, for example, if the substrate rides on the substrate holding member, the substrate falls off the substrate holding member with rotation, and the substrate May be damaged. For this reason, it is necessary to confirm that the substrate is properly held before the start of processing.

特許文献１には、基板保持部材の基板の保持状態を光学的に確認するための基板保持状態判断手段を備えた回転式の基板処理装置が開示されている。この基板保持状態判断手段は、複数組の投光器／受光器を備えており、各組の投光器および受光器は、基板の径方向に対向して基板の周縁の外側の位置に配置されている。特許文献１の基板処理装置は、処理を行う際に、回転する基板に供給されて遠心力により外方に飛散する処理液を受け止めるための昇降自在のカップが設けられている。各組の投光器および受光器は上昇位置にあるカップの外側に位置するように配置されている。カップが下降位置にあるときに基板の保持状態が判定され、保持状態が適正であると判定されたら、カップが基板の周囲を囲む上昇位置に移動され、この状態で回転する基板に処理液が供給されて所定の液処理が行われる。   Patent Document 1 discloses a rotary substrate processing apparatus provided with a substrate holding state determination means for optically checking a substrate holding state of a substrate holding member. The substrate holding state determining means includes a plurality of sets of light projectors / light receivers, and each set of light projectors and light receivers is disposed at a position outside the peripheral edge of the substrate so as to face the radial direction of the substrate. The substrate processing apparatus of Patent Document 1 is provided with a cup that can be raised and lowered to receive a processing liquid that is supplied to a rotating substrate and splashes outward by centrifugal force when processing. Each set of light projectors and light receivers is arranged outside the cup in the raised position. When the cup is in the lowered position, the holding state of the substrate is determined. If the holding state is determined to be appropriate, the cup is moved to the rising position surrounding the periphery of the substrate, and the processing liquid is applied to the rotating substrate in this state. The supplied liquid processing is performed.

特許文献１の基板保持状態判断手段は、カップが基板より低い高さにあって基板周縁の周囲空間が開放されているときにしか、保持状態の確認を行うことができない。すなわち、特許文献１の基板保持状態判断手段は、基板保持部材の基板の保持動作がカップ内で行われるように構成された基板処理装置に適用することはできない。投光器／受光器をカップ内に配置することにより、上記の制約は解消されるが、投光器／受光器のカップ内への配置は、カップ内の湿潤環境あるいは腐食環境を考慮すると好ましくない。   The substrate holding state determination means of Patent Document 1 can check the holding state only when the cup is at a lower height than the substrate and the peripheral space around the substrate is open. In other words, the substrate holding state determination unit of Patent Document 1 cannot be applied to a substrate processing apparatus configured to perform the holding operation of the substrate of the substrate holding member within the cup. Although the above restrictions are eliminated by arranging the projector / receiver in the cup, the arrangement of the projector / receiver in the cup is not preferable in consideration of a wet environment or a corrosive environment in the cup.

特開平８−３１６２９０号公報JP-A-8-316290

本発明は、基板保持部材による基板の保持状態を判別する装置の配置自由度、並びに保持状態判定の実行時期の自由度を向上させた基板処理装置を提供するものである。   The present invention provides a substrate processing apparatus in which the degree of freedom of arrangement of an apparatus for discriminating a holding state of a substrate by a substrate holding member and the degree of freedom of execution timing of holding state determination are improved.

本発明によれば、基板処理装置において、基板を保持する基板保持部材と、 前記基板保持部材に保持された基板の周囲に位置するように設けられた、前記基板処理装置の構成部材である基板周囲部材と、検出光を照射する投光器と、前記投光器から照射された検出光を受光する受光器と、を備え、前記投光器および前記受光器は、前記投光器から前記受光器に向かう検出光の光路が、前記基板保持部材により基板が保持されたときに基板が存在しうる領域を通過し、かつ、前記基板周囲部材を通過する位置に設けられており、前記投光器から照射される検出光は、前記基板周囲部材を透過し、かつ、基板を透過しない波長を有している、基板処理装置が提供される。   According to the present invention, in the substrate processing apparatus, a substrate holding member that holds the substrate, and a substrate that is a component of the substrate processing apparatus provided so as to be positioned around the substrate held by the substrate holding member. A surrounding member, a projector that irradiates detection light, and a light receiver that receives the detection light emitted from the light projector, wherein the light projector and the light receiver are optical paths of detection light from the light projector toward the light receiver. However, when the substrate is held by the substrate holding member, it passes through the region where the substrate can exist and is provided at a position passing through the substrate peripheral member, and the detection light emitted from the projector is: There is provided a substrate processing apparatus having a wavelength that transmits the substrate peripheral member and does not transmit the substrate.

一実施形態においては、前記基板保持部材に基板が異常な状態で保持された際に前記光路が前記基板により遮られ、かつ、前記基板保持部材に基板が正常な状態で保持された際に、前記光路が前記基板により遮られないように、前記投光器および前記受光器を配置することができる。あるいは、前記基板保持部材に基板が正常に保持された際に、前記光路が前記基板保持部材により保持された基板により遮られるように、前記投光器および前記受光器を配置することもできる。   In one embodiment, when the substrate is held in an abnormal state by the substrate holding member, the optical path is blocked by the substrate, and when the substrate is held in the normal state by the substrate holding member, The light projector and the light receiver can be arranged so that the optical path is not blocked by the substrate. Alternatively, when the substrate is normally held by the substrate holding member, the projector and the light receiver can be arranged so that the optical path is blocked by the substrate held by the substrate holding member.

また、本発明によれば、基板処理方法において、基板を基板保持部材により保持することと、投光器から検出光を照射するとともに、当該検出光を受光器により受光して、前記受光器による受光の有無または受光状態に応じて前記基板保持部材による基板の保持状態を判定することと、前記基板が前記基板保持部材に適切に保持されていると判定された後に、前記基板保持部材に保持された前記基板に処理流体を供給して前記基板に処理を施すことと、を備え、前記投光器および前記受光器は、前記投光器から前記受光器に向かう検出光の光路が、前記基板保持部材により基板が保持されたときに基板が存在しうる領域を通過し、かつ、前記基板の周囲に位置する基板処理装置の構成部材である基板周囲部材を通過する位置に設けられており、前記投光器から照射される検出光は、前記基板周囲部材を透過し、かつ、基板を透過しない波長を有している、基板処理方法が提供される。   According to the present invention, in the substrate processing method, the substrate is held by the substrate holding member, the detection light is irradiated from the projector, the detection light is received by the light receiver, and the light reception by the light receiver is received. The holding state of the substrate by the substrate holding member is determined according to the presence or absence or the light receiving state, and the substrate is held by the substrate holding member after it is determined that the substrate is appropriately held by the substrate holding member. Supplying a processing fluid to the substrate and processing the substrate, wherein the light projector and the light receiver have an optical path of detection light from the light projector toward the light receiver, the substrate holding member holding the substrate. It is provided at a position that passes through a region where the substrate can exist when held and passes through a substrate peripheral member that is a constituent member of the substrate processing apparatus positioned around the substrate. Detecting light emitted from the projector is transmitted through the substrate surrounding member, and has a wavelength that is not transmitted through the substrate, the substrate processing method is provided.

本発明によれば、基板の保持状態を判別する装置の配置自由度、並びに保持状態判定の実行時期の自由度を大幅に向上させることができる。   According to the present invention, it is possible to greatly improve the degree of freedom of arrangement of the apparatus for determining the holding state of the substrate and the degree of freedom of execution timing of the holding state.

本発明の一実施形態に係る基板処理装置の構成を示す縦断面図であって、ウエハが適切に基板保持部材に保持された状態を示す図である。It is a longitudinal cross-sectional view which shows the structure of the substrate processing apparatus which concerns on one Embodiment of this invention, Comprising: It is a figure which shows the state in which the wafer was hold | maintained appropriately at the substrate holding member. 図１の基板処理装置において、基板処理装置と、外部の基板搬送アームとの間でのウエハの受け渡しについて説明する図であり、受け渡しに関与しない構成部材の一部の表示を省略した図である。In the substrate processing apparatus of FIG. 1, it is a figure explaining the delivery of the wafer between a substrate processing apparatus and an external substrate transfer arm, and is a figure which abbreviate | omitted some display of the structural member which does not participate in delivery. . 基板保持部材によるウエハの保持状態を説明する図であって、（ａ）はウエハが適正に保持されている状態を示し、（ｂ）はウエハの乗り上げが発生している状態を示す図である。It is a figure explaining the holding | maintenance state of the wafer by a board | substrate holding member, Comprising: (a) shows the state in which the wafer is hold | maintained appropriately, (b) is a figure which shows the state in which the pick-up of the wafer has generate | occur | produced. . 基板処理装置における受光器の他の配置を説明する概略図である。It is the schematic explaining other arrangement | positioning of the light receiver in a substrate processing apparatus.

以下、添付図面を参照して本発明の実施の形態について説明する。   Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

基板処理装置は、筐体１０と、この筐体１０内に設けられてウエハＷを保持する円板形の保持プレート３０と、保持プレート３０の上方に設けられてウエハＷを下方から支持する複数例えば３本のリフトピン２２を有する円板形のリフトピンプレート２０と、保持プレート３０を回転させる電動モータ等を備えた回転駆動部３６と、保持プレート３０の中心部分に形成された貫通穴３０ａおよびリフトピンプレート２０の中心部分に形成された貫通穴２０ａを通るよう設けられた処理流体供給管４０とを備えている。   The substrate processing apparatus includes a housing 10, a disk-shaped holding plate 30 provided in the housing 10 for holding the wafer W, and a plurality of substrates provided above the holding plate 30 for supporting the wafer W from below. For example, a disc-shaped lift pin plate 20 having three lift pins 22, a rotation drive unit 36 including an electric motor for rotating the holding plate 30, a through hole 30 a formed in the central portion of the holding plate 30 and a lift pin And a processing fluid supply pipe 40 provided so as to pass through a through hole 20a formed in the central portion of the plate 20.

筐体１０の天井部には、ファンフィルタユニット（ＦＦＵ）１１が取り付けられており、このＦＦＵ１１により筐体１０の内部空間に、上部から下部へと向かう清浄空気のダウンフローが形成される。筐体１０の一つの側壁１０ａには、ウエハＷの搬出入口１２が設けられており、搬出入口１２はシャッター１３により開閉することができる。筐体１０の底壁には、筐体１０内の雰囲気を排気するための排気路１４が設けられている。   A fan filter unit (FFU) 11 is attached to the ceiling portion of the housing 10, and the FFU 11 forms a downflow of clean air from the top to the bottom in the internal space of the housing 10. One side wall 10 a of the housing 10 is provided with a wafer entrance / exit 12 for the wafer W, and the entrance / exit 12 can be opened and closed by a shutter 13. An exhaust passage 14 for exhausting the atmosphere in the housing 10 is provided on the bottom wall of the housing 10.

リフトピンプレート２０および処理流体供給管４０は、昇降させることができる。図１はリフトピンプレート２０および処理流体供給管４０がそれぞれの下降位置にあるときの状態を示しており、図２はリフトピンプレート２０および処理流体供給管４０がそれぞれの上昇位置にあるときの状態を示している。   The lift pin plate 20 and the processing fluid supply pipe 40 can be moved up and down. FIG. 1 shows a state when the lift pin plate 20 and the processing fluid supply pipe 40 are in their lowered positions, and FIG. 2 shows a state when the lift pin plate 20 and the processing fluid supply pipe 40 are in their raised positions. Show.

保持プレート３０の上面には、接続部材３２を介して回転カップ３１が取り付けられている。回転カップ３１は、リフトピンプレート２０および処理流体供給管４０が下降位置にあるときに、保持プレート３０により保持されたウエハＷの外周縁を囲む。保持プレート３０には、ウエハＷを保持する３つの（図１では２つだけ、図２では１つだけ図示する）基板保持部材３４が設けられ、保持プレート３０の周縁に沿って等間隔で配置されている。   A rotating cup 31 is attached to the upper surface of the holding plate 30 via a connection member 32. The rotary cup 31 surrounds the outer peripheral edge of the wafer W held by the holding plate 30 when the lift pin plate 20 and the processing fluid supply pipe 40 are in the lowered position. The holding plate 30 is provided with three substrate holding members 34 (only two are shown in FIG. 1 and only one is shown in FIG. 2) holding the wafer W, and are arranged at equal intervals along the periphery of the holding plate 30. Has been.

保持プレート３０の下面の中心部分には、当該保持プレート３０の下面から下方に延びる中空の回転軸３５が取り付けられている。回転軸３５の中空部分には処理流体供給管４０が収容されている。回転軸３５はベアリング（図示せず）により支持されており、電動モータ等の回転駆動部３６により回転させることができ、これにより保持プレート３０も回転する。   A hollow rotating shaft 35 extending downward from the lower surface of the holding plate 30 is attached to the central portion of the lower surface of the holding plate 30. A processing fluid supply pipe 40 is accommodated in the hollow portion of the rotating shaft 35. The rotating shaft 35 is supported by a bearing (not shown), and can be rotated by a rotation driving unit 36 such as an electric motor, whereby the holding plate 30 also rotates.

保持プレート３０には３つの貫通穴が形成されており、各貫通穴には、リフトピンプレート２０に結合された接続部材２４がスライド可能に通されている。従って、接続部材２４は、保持プレート３０とリフトピンプレート２０との相対的回転を禁止して保持プレート３０およびリフトピンプレート２０を両者が一体的に回転するように連結する一方で、保持プレート３０とリフトピンプレート２０との相対的上下動を許容する。また、保持プレート３０の下面には、各接続部材２４に対応する位置に、３つの円筒部材３７が設けられている。各円筒部材３７はそれぞれ１つの接続部材２４を収容する。各円筒部材３７内には接続部材２４を下方に付勢するバネ２６が収容されている。   Three through holes are formed in the holding plate 30, and a connection member 24 coupled to the lift pin plate 20 is slidably passed through each through hole. Accordingly, the connecting member 24 prohibits the relative rotation between the holding plate 30 and the lift pin plate 20 and connects the holding plate 30 and the lift pin plate 20 so as to rotate together, while the holding plate 30 and the lift pin plate 20 are connected together. Relative vertical movement with respect to the plate 20 is allowed. Further, three cylindrical members 37 are provided on the lower surface of the holding plate 30 at positions corresponding to the connection members 24. Each cylindrical member 37 accommodates one connecting member 24. Each cylindrical member 37 accommodates a spring 26 that biases the connecting member 24 downward.

回転カップ３１の外方には外カップ３８が設けられており、保持プレート３０および回転カップ３１は外カップ３８により囲われる。ウエハＷに供給された後にウエハＷの回転により外方に飛散して外カップ３８により受けられた洗浄液は、外カップ３８に接続された排液管３９により排出される。   An outer cup 38 is provided outside the rotating cup 31, and the holding plate 30 and the rotating cup 31 are surrounded by the outer cup 38. After being supplied to the wafer W, the cleaning liquid splashed outward by the rotation of the wafer W and received by the outer cup 38 is discharged through a drain pipe 39 connected to the outer cup 38.

各基板保持部材３４は軸３４ａを介して保持プレート３０に支持され、軸３４ａを中心として揺動することができる。軸３４ａには、基板保持部材３４をウエハＷから離間する方向に回転させるように付勢する捻りバネ等のバネ部材（図示せず）が装着されている。従って、基板保持部材３４に何ら力が加えられていない場合には、基板保持部材３４は図２に示すようにウエハＷを解放する解放位置に位置する。   Each substrate holding member 34 is supported by the holding plate 30 via a shaft 34a, and can swing around the shaft 34a. A spring member (not shown) such as a torsion spring that biases the substrate holding member 34 to rotate away from the wafer W is mounted on the shaft 34a. Therefore, when no force is applied to the substrate holding member 34, the substrate holding member 34 is located at a release position where the wafer W is released as shown in FIG.

基板保持部材３４は、基板保持部分３４ｂと、被押圧部分３４ｃとを有している。リフトピンプレート２０が上昇位置から下降位置に移動すると、基板保持部材３４は、リフトピンプレート２０の下面により被押圧部分３４ｃが下方に押されることにより、軸３４ａを中心として図１および図２中における反時計回り方向に回転する。これにより基板保持部分３４ｂがウエハＷに近接するように変位する。リフトピンプレート２０が下降位置に到達したときに、３つの基板保持部材３４により保持される。このときの基板保持部材３４の位置を保持位置と呼ぶ。ウエハＷが基板保持部材３４により保持された後に、リフトピンプレート２０がさらに僅かに下降し、これによりウエハＷはリフトピン２２の先端から僅かに離れる。   The substrate holding member 34 has a substrate holding portion 34b and a pressed portion 34c. When the lift pin plate 20 moves from the raised position to the lowered position, the pressed portion 34c is pushed downward by the lower surface of the lift pin plate 20, so that the substrate holding member 34 is shown in FIG. 1 and FIG. Rotate clockwise. As a result, the substrate holding portion 34 b is displaced so as to be close to the wafer W. When the lift pin plate 20 reaches the lowered position, it is held by the three substrate holding members 34. The position of the substrate holding member 34 at this time is called a holding position. After the wafer W is held by the substrate holding member 34, the lift pin plate 20 is further lowered slightly, so that the wafer W is slightly separated from the tip of the lift pin 22.

処理流体供給管４０は、リフトピンプレート２０の中央部分に形成された貫通穴２０ａ、保持プレート３０の中央部分に形成された貫通穴３０ａ、および中空の回転軸３５の内部空間を通過しており、リフトピンプレート２０および保持プレート３０が回転する際にも回転しないようになっている。処理流体供給管４０の内部には、この基板処理装置にて実行される処理に必要な処理流体を流すための１つまたは複数の流体供給路４１が軸方向に延びている。各流体供給路４１の上端の開口部４２は、処理流体を基板に吐出するためのノズルの吐出口となる。各流体供給路４１には、概略的に示す流体供給機構４３により処理流体が供給される。流体供給機構４３は流体供給源に接続された開閉弁、流量調整弁等（図示せず）を備えている。処理流体としては、ＤＨＦ、ＳＣ１等の薬液、ＤＩＷ等のリンス液、乾燥補助流体としてのＮ２ガスなどが例示されるが、もちろんこれらに限定されるものではない。 The processing fluid supply pipe 40 passes through a through hole 20a formed in the central portion of the lift pin plate 20, a through hole 30a formed in the central portion of the holding plate 30, and an internal space of the hollow rotary shaft 35. Even when the lift pin plate 20 and the holding plate 30 rotate, they do not rotate. Inside the processing fluid supply pipe 40, one or a plurality of fluid supply paths 41 for flowing a processing fluid required for processing performed in the substrate processing apparatus extend in the axial direction. The opening 42 at the upper end of each fluid supply path 41 serves as a nozzle outlet for discharging the processing fluid onto the substrate. A processing fluid is supplied to each fluid supply path 41 by a fluid supply mechanism 43 schematically shown. The fluid supply mechanism 43 includes an on-off valve, a flow rate adjustment valve, and the like (not shown) connected to a fluid supply source. Examples of the processing fluid include chemical solutions such as DHF and SC1, rinse solutions such as DIW, and N 2 gas as a drying auxiliary fluid, but of course not limited thereto.

処理流体供給管４０は接続部材５２を介して昇降駆動部５０により昇降する。また、３本の押棒５４（１本だけが図示されている）が連動部材５６を介して処理流体供給管４０に接続されている。図１に示す状態から、昇降駆動部５０により処理流体供給管４０を上昇させると、それに連動して押棒５４も上昇し、押棒５４が対応する角度位置にある接続部材２４を上方に押し上げる。これにより、図２に示すように、リフトピンプレート２０が上昇位置に到達する。この状態から、昇降駆動部５０により処理流体供給管４０を下降させると、リフトピンプレート２０は下降位置に移動して保持プレート３０上に載置され、また、押棒５４も処理流体供給管４０と連動して下降して接続部材２４から離れ、接続部材２４はバネ２６の力により下降する。   The processing fluid supply pipe 40 is moved up and down by the lift drive unit 50 via the connection member 52. Further, three push rods 54 (only one is shown) are connected to the processing fluid supply pipe 40 via an interlocking member 56. In the state shown in FIG. 1, when the processing fluid supply pipe 40 is raised by the elevation drive unit 50, the push rod 54 is also raised in conjunction therewith, and the push rod 54 pushes the connecting member 24 at the corresponding angular position upward. Thereby, as shown in FIG. 2, the lift pin plate 20 reaches the raised position. In this state, when the processing fluid supply pipe 40 is lowered by the lift drive unit 50, the lift pin plate 20 is moved to the lowered position and placed on the holding plate 30, and the push rod 54 is also interlocked with the processing fluid supply pipe 40. Then, it is lowered and separated from the connection member 24, and the connection member 24 is lowered by the force of the spring 26.

基板処理装置はさらに、保持プレート３０によるウエハＷの保持状態を判定するための第１保持状態判定装置６０および第２保持状態判定装置７０を備えている。第１保持状態判定装置６０は、ウエハＷの有無を検出するためのものである。第２保持状態判定装置７０は、基板保持部材３４の基板保持部分３４ｂへのウエハＷの乗り上げの有無を検出するためのものである。   The substrate processing apparatus further includes a first holding state determination device 60 and a second holding state determination device 70 for determining the holding state of the wafer W by the holding plate 30. The first holding state determination device 60 is for detecting the presence or absence of the wafer W. The second holding state determination device 70 is for detecting whether or not the wafer W has been carried on the substrate holding portion 34 b of the substrate holding member 34.

第１保持状態判定装置６０は、検出光を照射する投光器６１と、検出光を受光して受光状態に応じた検出信号を出力する受光器６２と、受光器６２から出力された検出信号に基づいてウエハＷの保持状態を判定する判定部６３とを備えている。   The first holding state determination device 60 is based on a projector 61 that emits detection light, a light receiver 62 that receives the detection light and outputs a detection signal corresponding to the light reception state, and a detection signal output from the light receiver 62. And a determination unit 63 for determining the holding state of the wafer W.

投光器６１は、検出光として、平行光を照射することができるように構成された平行光ＬＥＤ（Light Emitting Diode）を備えて構成されている。ＬＥＤ光の波長は好ましくは８８０ｎｍである。８８０ｎｍのＬＥＤ光は、シリコンウエハを加熱するために用いられるものであり、シリコンウエハに非常に良く吸収され、シリコンウエハを殆ど透過しない。   The projector 61 includes a parallel light LED (Light Emitting Diode) configured to be able to emit parallel light as detection light. The wavelength of the LED light is preferably 880 nm. The 880 nm LED light is used to heat the silicon wafer and is absorbed very well by the silicon wafer and hardly transmits through the silicon wafer.

受光器６２は、検出光の波長に対して所定の感度、好ましくは高い感度を有するフォトセンサを有している。受光器６２は、例えば、前記感度を有するフォトセンサを備えたＣＣＤ（電荷結合素子）二次元イメージセンサにより構成することができる。受光器６２として、波長８８０ｎｍのＬＥＤ光を選択的に検出することができるように、バンドパスフィルタ、石英ガラスないし硼珪酸ガラス等からなるウインドウを有しているものを用いることも好ましい。   The light receiver 62 has a photosensor having a predetermined sensitivity, preferably a high sensitivity, with respect to the wavelength of the detection light. The light receiver 62 can be constituted by, for example, a CCD (Charge Coupled Device) two-dimensional image sensor provided with a photosensor having the above sensitivity. It is also preferable to use a light receiver 62 having a window made of a bandpass filter, quartz glass, borosilicate glass, or the like so that LED light having a wavelength of 880 nm can be selectively detected.

図示された実施形態においては、投光器６１は筐体１０の天井壁１０ｃの外側に設けられ、受光器６２は筐体１０の底壁１０ｄの外側に設けられている。従って、投光器６１から照射されて受光器６２に至る検出光の光路６４は、筐体１０の天井壁１０ｃ、リフトピンプレート２０、保持プレート３０、そして筐体１０の底壁１０ｄを通過するように設定されている。これらの検出光の光路６４が通過する部材は、少なくとも光路６４が通過する部分が、検出光を透過する材料により構成されている。このような材料として、ＰＥＥＫ（ポリエーテルエーテルケトン）、ＰＶＣ（ポリ塩化ビニル）、ＰＴＦＥ（ポリテトラフルオロエチレン）が例示される。ＰＥＥＫおよびＰＴＦＥは半導体製造装置における耐薬品性樹脂材料として良く用いられており、筐体１０、リフトピンプレート２０および保持プレート３０の少なくとも一部を構成する材料として用いることに何ら不都合はない。なお、ＰＥＥＫおよびＰＴＦＥのような半導体装置においてよく用いられる耐薬品性樹脂材料の多くは、１１００ｎｍより長波長側に吸収ピークを有しているので、検出光の波長は、１１００ｎｍ以下であることが好ましい。   In the illustrated embodiment, the projector 61 is provided outside the ceiling wall 10 c of the housing 10, and the light receiver 62 is provided outside the bottom wall 10 d of the housing 10. Accordingly, the optical path 64 of the detection light irradiated from the projector 61 to the light receiver 62 is set so as to pass through the ceiling wall 10c of the housing 10, the lift pin plate 20, the holding plate 30, and the bottom wall 10d of the housing 10. Has been. In the member through which the optical path 64 of the detection light passes, at least a portion through which the optical path 64 passes is made of a material that transmits the detection light. Examples of such materials include PEEK (polyether ether ketone), PVC (polyvinyl chloride), and PTFE (polytetrafluoroethylene). PEEK and PTFE are often used as chemical-resistant resin materials in semiconductor manufacturing apparatuses, and there is no inconvenience in using PEEK and PTFE as materials constituting at least a part of the housing 10, the lift pin plate 20, and the holding plate 30. It should be noted that since many chemical-resistant resin materials often used in semiconductor devices such as PEEK and PTFE have an absorption peak on the longer wavelength side than 1100 nm, the wavelength of the detection light may be 1100 nm or less. preferable.

図１に示すように、ウエハＷが保持プレート３０に保持されていると、投光器６１からの検出光がウエハＷに遮られるので、受光器６２には到達しない。一方、ウエハＷが保持プレート３０に保持されていないときには、投光器６１からの検出光は、筐体１０の天井壁１０ｃ、リフトピンプレート２０、保持プレート３０、そして筐体１０の底壁１０ｄを透過して、受光器６２に入射する。このようにウエハＷの有無に応じて受光器６２の受光状態が変化し、これに伴い受光器６２から出力される出力信号が変化するので、この変化に基づいて判定部６３はウエハの有無を判定することができる。   As shown in FIG. 1, when the wafer W is held on the holding plate 30, the detection light from the light projector 61 is blocked by the wafer W and therefore does not reach the light receiver 62. On the other hand, when the wafer W is not held by the holding plate 30, the detection light from the projector 61 passes through the ceiling wall 10 c of the housing 10, the lift pin plate 20, the holding plate 30, and the bottom wall 10 d of the housing 10. Then, the light enters the light receiver 62. As described above, the light receiving state of the light receiver 62 changes depending on the presence or absence of the wafer W, and the output signal output from the light receiver 62 changes accordingly. Based on this change, the determination unit 63 determines the presence or absence of the wafer. Can be determined.

第２保持状態判定装置７０も、第１保持状態判定部６０と同様に、投光器７１と、受光器７２と、判定部７３とを備えている。投光器７１および受光器７２は、投光器６１および受光器６２と同じものを用いることができる。   Similarly to the first holding state determination unit 60, the second holding state determination device 70 also includes a projector 71, a light receiver 72, and a determination unit 73. The light projector 71 and the light receiver 72 can be the same as the light projector 61 and the light receiver 62.

投光器７１から照射されて受光器７２に至る検出光の光路７４は、筐体１０の側壁１０ｂ、基板保持部材３４の基板保持部分３４ｂの先端部、回転カップ３１、外カップ３８、筐体１０の側壁１０ａを通過するように設定されている。これらの検出光の光路７４が通過する部材は、少なくとも光路７４が通過する部分が、検出光を透過する材料により構成されている。例えば、回転カップ３１および外カップ３８は、ＰＥＥＫまたはＰＴＦＥにより形成することができる。なお、光路７４を基板保持部材３４の基板保持部分３４ｂの先端部を通過させることに代えて、基板保持部分３４ｂの先端部の側方近傍を通過させてもよい。   The optical path 74 of the detection light irradiated from the projector 71 and reaching the light receiver 72 includes the side wall 10b of the housing 10, the tip of the substrate holding portion 34b of the substrate holding member 34, the rotating cup 31, the outer cup 38, and the housing 10. It is set so as to pass through the side wall 10a. In the member through which the optical path 74 of the detection light passes, at least a portion through which the optical path 74 passes is made of a material that transmits the detection light. For example, the rotating cup 31 and the outer cup 38 can be formed of PEEK or PTFE. Instead of passing the optical path 74 through the tip of the substrate holding portion 34b of the substrate holding member 34, the optical path 74 may pass through the vicinity of the side of the tip of the substrate holding portion 34b.

図３（ａ）に示すように、基板保持部材３４が適正にウエハＷを保持している場合には、検出光の光路７４上にウエハＷが存在しないため、投光器７１から照射された検出光は受光器７２に入射する。一方、図３（ｂ）に示すように、基板保持部分３４ｂの先端部の上にウエハＷが乗り上げている場合には、検出光の少なくとも一部がウエハＷに遮られ、受光器７２に検出光が入射しなくなるか、若しくは入射光量が少なくなる。このようにウエハＷの乗り上げの有無に応じて受光器７２の受光状態が変化し、これに伴い受光器７２から出力される出力信号が変化するので、この変化に基づいて判定部７３はウエハの乗り上げの有無を判定することができる。   As shown in FIG. 3A, when the substrate holding member 34 appropriately holds the wafer W, the wafer W does not exist on the optical path 74 of the detection light, and thus the detection light emitted from the projector 71. Enters the light receiver 72. On the other hand, as shown in FIG. 3B, when the wafer W is on the tip of the substrate holding portion 34 b, at least a part of the detection light is blocked by the wafer W and detected by the light receiver 72. Light is not incident or the amount of incident light is reduced. As described above, the light receiving state of the light receiver 72 changes depending on whether or not the wafer W is carried on, and the output signal output from the light receiver 72 changes accordingly. The presence or absence of boarding can be determined.

基板処理装置は、その全体の動作を統括制御するコントローラ（制御装置）１００を有している。コントローラ１００は、基板処理装置の全ての機能部品（例えば回転駆動部３６、昇降駆動部５０、流体供給機構４３、第１および第２保持状態判定装置６０，７０など）の動作を制御する。コントローラ１００は、ハードウエアとして例えば汎用コンピュータと、ソフトウエアとして当該コンピュータを動作させるためのプログラム（装置制御プログラムおよび処理レシピ等）とにより実現することができる。ソフトウエアは、コンピュータに固定的に設けられたハードディスクドライブ等の記憶媒体に格納されるか、あるいはＣＤＲＯＭ、ＤＶＤ、フラッシュメモリ等の着脱可能にコンピュータにセットされる記憶媒体に格納される。このような記憶媒体が参照符号１０１で示されている。プロセッサ１０２は必要に応じて図示しないユーザーインターフェースからの指示等に基づいて所定の処理レシピを記憶媒体１０１から呼び出して実行させ、これによってコントローラ１００の制御の下で基板処理装置の各機能部品が動作して所定の処理が行われる。コントローラ１００は、基板処理装置が組み込まれている基板処理システム全体の動作を制御するシステムコントローラであるか、あるいは、このようなシステムコントローラと連携して動作するコントローラとすることができる。   The substrate processing apparatus has a controller (control device) 100 that controls the overall operation of the substrate processing apparatus. The controller 100 controls the operation of all functional components of the substrate processing apparatus (for example, the rotation drive unit 36, the lift drive unit 50, the fluid supply mechanism 43, the first and second holding state determination devices 60 and 70, etc.). The controller 100 can be realized by, for example, a general-purpose computer as hardware and a program (such as an apparatus control program and a processing recipe) for operating the computer as software. The software is stored in a storage medium such as a hard disk drive that is fixedly provided in the computer, or is stored in a storage medium that is detachably set in the computer such as a CDROM, DVD, or flash memory. Such a storage medium is indicated by reference numeral 101. The processor 102 calls a predetermined processing recipe from the storage medium 101 based on an instruction from a user interface (not shown) or the like as necessary, and causes each functional component of the substrate processing apparatus to operate under the control of the controller 100. Then, a predetermined process is performed. The controller 100 may be a system controller that controls the operation of the entire substrate processing system in which the substrate processing apparatus is incorporated, or may be a controller that operates in cooperation with such a system controller.

次に、基板処理装置の動作について説明する。下記の動作はコントローラ１００の制御の下で行われる。   Next, the operation of the substrate processing apparatus will be described. The following operation is performed under the control of the controller 100.

まず、リフトピンプレート２０および処理流体供給管４０を図２に示す上昇位置に位置させる。次に、シャッター１３が開かれて、被処理面を下向きにしてウエハＷを保持した搬送アーム９０が、基板処理装置の外部から筐体１０の内部に進入し、ウエハＷ（図２中において二点鎖線で示す）がリフトピンプレート２０の真上に位置する。次いで、搬送アーム９０が下降して、ウエハＷ（図２中において実線で示す）がリフトピンプレート２０のリフトピン２２上に載置される。   First, the lift pin plate 20 and the processing fluid supply pipe 40 are positioned at the raised position shown in FIG. Next, the shutter 13 is opened, and the transfer arm 90 holding the wafer W with the processing surface facing downward enters the inside of the housing 10 from the outside of the substrate processing apparatus, and the wafer W (in FIG. (Shown by a dotted line) is located directly above the lift pin plate 20. Next, the transfer arm 90 is lowered, and the wafer W (shown by a solid line in FIG. 2) is placed on the lift pins 22 of the lift pin plate 20.

次に、リフトピンプレート２０および処理流体供給管４０を図１に示す下降位置に移動させる。これによって、前述したように、基板保持部材３４が揺動し、ウエハＷは基板保持部材３４によって保持され、かつ、ウエハＷはリフトピン２２から離れて僅かに上方に位置する。以上により、ウエハＷの搬入が終了する。   Next, the lift pin plate 20 and the processing fluid supply pipe 40 are moved to the lowered position shown in FIG. As a result, as described above, the substrate holding member 34 swings, the wafer W is held by the substrate holding member 34, and the wafer W is positioned slightly above the lift pins 22. Thus, the loading of the wafer W is completed.

ウエハＷの搬入が終了すると、第１保持状態判定装置６０および第２保持状態判定装置７０が動作し、ウエハＷの保持状態が判定される。   When the loading of the wafer W is completed, the first holding state determination device 60 and the second holding state determination device 70 operate to determine the holding state of the wafer W.

第１保持状態判定装置６０は、前述したようにウエハＷの有無を判定する。なお、ウエハＷが無いという状況は、例えば、ウエハＷを保持した状態で筐体１０内に進入しなければならない搬送アーム９０が、基板処理装置の外部にて生じた何らかの不具合により、ウエハＷを保持していなかったことによるものと考えられる。   The first holding state determination device 60 determines the presence or absence of the wafer W as described above. The situation where there is no wafer W is, for example, when the transfer arm 90 that must enter the housing 10 while holding the wafer W causes the wafer W to be removed due to some trouble occurring outside the substrate processing apparatus. This is probably due to the fact that they did not hold it.

第２保持状態判定装置７０は、前述したようにウエハＷの基板保持部材３４上への乗り上げの有無を判定する。なお、図３（ｂ）に示すような乗り上げは、例えば、搬送アーム９０がリフトピンプレート２０上の不適切な位置に載置したことにより生じうる。ウエハＷの搬入／搬出を行う場合には、回転角度制御機能を有する回転駆動部３６が、接続部材２４と押棒５４とが鉛直方向に整列するような角度位置でリフトピンプレート２０および保持プレート３０を停止させる。なお、回転駆動部３６の回転角度制御機能を実現するため、回転駆動部３６または回転軸３５の回転角度位置を検出するための図示しない回転角度センサが設けられている。また、保持プレート３０がこのような角度位置にあるときに、基板保持部材３４を第２保持状態判定装置７０の光路７４が横切るように、投光器７１および受光器７２が設置されている。   As described above, the second holding state determination device 70 determines whether or not the wafer W has been carried on the substrate holding member 34. Note that the boarding as shown in FIG. 3B can be caused, for example, when the transfer arm 90 is placed at an inappropriate position on the lift pin plate 20. When carrying in / out the wafer W, the rotation drive unit 36 having a rotation angle control function moves the lift pin plate 20 and the holding plate 30 at an angular position where the connecting member 24 and the push bar 54 are aligned in the vertical direction. Stop. In order to realize a rotation angle control function of the rotation drive unit 36, a rotation angle sensor (not shown) for detecting the rotation angle position of the rotation drive unit 36 or the rotation shaft 35 is provided. Further, the projector 71 and the light receiver 72 are installed so that the optical path 74 of the second holding state determination device 70 crosses the substrate holding member 34 when the holding plate 30 is in such an angular position.

ウエハＷを保持している保持プレート６０を回転させて、３つの基板保持部材３４を光路７４と交差する位置に順次位置させることにより、１つの第２保持状態判定装置７０により各基板保持部材３４に対するウエハＷの乗り上げの有無の判定を行うことができる。これに代えて、第２保持状態判定装置７０を３つ設けてもよい。この場合、保持プレート３０が上記の角度位置にあるときに、各第２保持状態判定装置７０の検出光の光路７４がそれぞれ３つの基板保持部材３４のうちの１つを横切るようにする。そうすれば、３つの基板保持部材３４におけるウエハＷの乗り上げの有無の判定を一度に行うことができる。   By rotating the holding plate 60 holding the wafer W and sequentially positioning the three substrate holding members 34 at positions intersecting the optical path 74, each substrate holding member 34 is obtained by one second holding state determination device 70. It is possible to determine whether or not the wafer W has been loaded on the wafer. Instead of this, three second holding state determination devices 70 may be provided. In this case, when the holding plate 30 is in the above-described angular position, the optical path 74 of the detection light of each second holding state determination device 70 crosses one of the three substrate holding members 34. By doing so, it is possible to determine whether or not the wafer W has been loaded on the three substrate holding members 34 at a time.

第１保持状態判定装置６０および第２保持状態判定装置によりウエハＷの保持状態が適正であると判定されると、回転駆動部３６によりウエハＷを回転させるとともに、処理流体供給管４０の上端の開口部４２から必要な処理流体をウエハＷの下面に供給することにより、ウエハＷに所定の処理（薬液洗浄処理、リンス処理、乾燥処理等）が施される。   When the first holding state determination device 60 and the second holding state determination device determine that the holding state of the wafer W is appropriate, the rotation drive unit 36 rotates the wafer W and the upper end of the processing fluid supply pipe 40 is rotated. By supplying a necessary processing fluid from the opening 42 to the lower surface of the wafer W, the wafer W is subjected to predetermined processing (chemical solution cleaning processing, rinsing processing, drying processing, etc.).

第１保持状態判定装置６０の判定部６３によりウエハＷが無いと判定された場合、判定部６３はコントローラ１００にその旨を通知する信号を送る。コントローラ１００は、その後の処理は行わず、別のウエハＷがロードされるまで基板処理装置を待機状態にさせる。これによれば、無駄な処理流体の消費を防止することができる。また、図示された実施形態の場合、ウエハＷが無い状態で処理流体供給管４０から処理液を吐出させると、処理液が筐体１０内に飛散して筐体内を汚染することになるが、ウエハの有無を判定することにより、そのような事態を未然に防止することができる。   When the determination unit 63 of the first holding state determination device 60 determines that there is no wafer W, the determination unit 63 sends a signal to that effect to the controller 100. The controller 100 does not perform subsequent processing, and puts the substrate processing apparatus in a standby state until another wafer W is loaded. According to this, it is possible to prevent wasteful processing fluid consumption. In the case of the illustrated embodiment, if the processing liquid is discharged from the processing fluid supply pipe 40 in the absence of the wafer W, the processing liquid is scattered in the housing 10 and contaminates the inside of the housing. By determining the presence or absence of a wafer, such a situation can be prevented in advance.

第２保持状態判定装置７０の判定部７３によりウエハＷの乗り上げが発生していると判定された場合、判定部７３はコントローラ１００にその旨を通知する信号を送る。コントローラ１００は、昇降駆動部５０を動作させるとともに、搬送アーム９０のコントローラに指示を送り、ウエハＷの保持動作の再試行（すなわち、一旦ウエハを搬送アーム９０に戻した後に、再度、基板保持部材３４によりウエハＷを保持させる）を行う。再試行を行った後に、判定部７３より再度の判定が行われ、ウエハＷが適切に保持されていることが確認された場合には、ウエハＷに所定の処理が行われる。再試行の後においてもウエハＷが適切に保持されていないと判定された場合には、コントローラ１００は、ディスプレイまたは警報音発生装置等のアラーム手段（図示せず）を用いて、オペレータに異常を報知する。これを受けて、オペレータはメンテナンス作業を行う。   When the determination unit 73 of the second holding state determination apparatus 70 determines that the wafer W has been loaded, the determination unit 73 sends a signal to notify the controller 100 to that effect. The controller 100 operates the elevating drive unit 50 and also sends an instruction to the controller of the transfer arm 90 to retry the holding operation of the wafer W (that is, after returning the wafer to the transfer arm 90, the substrate holding member is once again. 34, the wafer W is held). After performing the retry, the determination unit 73 performs another determination, and when it is confirmed that the wafer W is appropriately held, a predetermined process is performed on the wafer W. If it is determined that the wafer W is not properly held even after the retry, the controller 100 uses an alarm means (not shown) such as a display or an alarm sound generator to give an abnormality to the operator. Inform. In response, the operator performs maintenance work.

所定の処理が終了したら、昇降駆動部５０によりリフトピンプレート２０および処理流体供給管４０を下降位置から上昇位置まで移動させる。この過程において、基板保持部材３４からウエハＷが解放され、リフトピンプレート２０のリフトピン２２上に載置される。その後、ウエハＷは、開放された搬出入口１２を通って筐体１０内に進入してきた搬送アーム９０により受け取られ（ウエハＷのアンロード）、基板処理装置の外部に搬送される。   When the predetermined processing is completed, the lift drive plate 50 moves the lift pin plate 20 and the processing fluid supply pipe 40 from the lowered position to the raised position. In this process, the wafer W is released from the substrate holding member 34 and placed on the lift pins 22 of the lift pin plate 20. Thereafter, the wafer W is received by the transfer arm 90 that has entered the housing 10 through the opened transfer port 12 (unloading of the wafer W) and transferred to the outside of the substrate processing apparatus.

上記の実施形態によれば、検出光の波長をウエハＷを透過しないような波長に設定し、かつ、投光器６１，７１から受光器６２，７２に至る検出光の光路６４，７４が通過する基板周囲部材（基板保持部材３４に保持されたウエハＷの周囲に位置するように設けられた、基板処理装置の構成部材、例えば、回転カップ３１、外カップ３８、基板保持部材３４等を意味する）を検出光が透過するような材料で構成しているため、基板周囲部材に影響を受けることなく、ウエハＷの保持状態の検出を行うことができる。このため、保持状態判定装置（投光器および受光器）の配置の自由度が大幅に向上する。また、ウエハＷが基板周囲部材に囲まれている場合には保持状態の判定ができないといった制約がなくなり、保持状態判定の実行タイミングの自由度が大幅に向上する。   According to the above embodiment, the wavelength of the detection light is set to a wavelength that does not pass through the wafer W, and the optical paths 64 and 74 of the detection light from the light projectors 61 and 71 to the light receivers 62 and 72 pass through. Peripheral members (meaning constituent members of the substrate processing apparatus, for example, the rotating cup 31, the outer cup 38, the substrate holding member 34, etc.) provided so as to be positioned around the wafer W held by the substrate holding member 34) Is made of a material that allows the detection light to pass through, so that the holding state of the wafer W can be detected without being affected by the peripheral members of the substrate. For this reason, the freedom degree of arrangement | positioning of a holding | maintenance state determination apparatus (a projector and a light receiver) improves significantly. Further, when the wafer W is surrounded by the substrate peripheral member, there is no restriction that the holding state cannot be determined, and the degree of freedom of the holding state determination execution timing is greatly improved.

なお、第２保持状態判定装置７０によるウエハ保持状態の判定を、ウエハＷを回転させている間も継続して行ってもよい。この場合、前述した図示しない回転角度センサの検出値に基づいて、基板保持部材３４が光路７４を通過するタイミングで第２保持状態判定装置７０によるウエハＷの保持状態の検出を行うことができる。これにより、回転中に生じる振動等により万一ウエハＷの保持状態が変化した場合でも、回転を非常停止させて、ウエハＷおよび基板処理装置の損傷を防止することができる。   Note that the determination of the wafer holding state by the second holding state determination device 70 may be continuously performed while the wafer W is being rotated. In this case, the holding state of the wafer W can be detected by the second holding state determination device 70 at the timing when the substrate holding member 34 passes the optical path 74 based on the detection value of the rotation angle sensor (not shown) described above. As a result, even if the holding state of the wafer W changes due to vibration or the like generated during rotation, the rotation can be stopped urgently and damage to the wafer W and the substrate processing apparatus can be prevented.

なお、上記の説明において「検出光を透過する」とは透過率が概ね１００％であることに限定されるものではなく、また「検出光を透過しない」とは透過率が概ね０％であることに限定されるものではない。ウエハＷが検出光を遮った場合と遮っていない場合とにおいて、受光器６２，７２の出力信号に判定の根拠となりうる有意な差異が生じる程度に「検出光を透過する」（「検出光を透過しない」）のであれば十分である。   In the above description, “transmitting the detection light” is not limited to the transmittance being approximately 100%, and “not transmitting the detection light” is approximately 0%. It is not limited to that. “Where detection light is transmitted” (“detection light is transmitted to the extent that a significant difference that can be a basis for determination occurs in the output signals of the light receivers 62 and 72 between the case where the wafer W blocks the detection light and the case where the wafer W does not block the detection light. If it does not transmit "), it is sufficient.

基板処理装置の構造は、図示されたものに限定されるものではない。例えば、基板処理装置は、基板の上面に処理液を供給するように構成されたものであってもよい。また例えば、基板処理装置は、回転天板に設けられた可動基板保持部材により回転天板の下方で基板を保持する形式の基板保持機構を有するものであってもよい。また、基板処理装置は、基板の下面中央部を真空吸着するバキュームチャックを有するものであってもよい。基板に供給される処理流体は液体に限らず、気体であってもよい。基板は回転させなくてもよい。   The structure of the substrate processing apparatus is not limited to the illustrated one. For example, the substrate processing apparatus may be configured to supply a processing liquid to the upper surface of the substrate. Further, for example, the substrate processing apparatus may have a substrate holding mechanism of a type that holds a substrate below the rotary top plate by a movable substrate holding member provided on the rotary top plate. Further, the substrate processing apparatus may have a vacuum chuck that vacuum-sucks the central portion of the lower surface of the substrate. The processing fluid supplied to the substrate is not limited to liquid but may be gas. The substrate may not be rotated.

また、図４（ａ）、（ｂ）に示すように、検出光の受光を別の構成を用いて実行することができる。図４（ａ）に示す変形実施形態では、受光器７２（破線で示す）を光路７４上に配置することに代えて、受光器７２’（例えばＣＣＤアレイ）を有する撮像装置７５を、検出光進行方向に関して基板周囲部材（ここでは外カップ３８）よりも下流側の領域において、光路７４の側方に配置する。検出光は大気中で散乱するので、光路７４の側方から撮像を行うことにより、光路７４上に検出光があれば、線状の検出光の（検出光の散乱光の）画像が得られる。この画像に基づいて、検出光進行方向に関して基板周囲部材の上流側で生じたウエハＷ（図示せず）による検出光の遮光の度合いを測定することができる。また、図４（ｂ）の変形実施形態では、投影壁（スクリーン）７６を、検出光進行方向に関して基板周囲部材（ここでは外カップ３８）よりも下流側の領域において、光路７４に沿うように配置する。投影壁７６の表面が光路７４に対して極く僅かな角度を成すように投影壁７６を設置すれば、投影壁７６の表面上に、検出光が線状に投影される。受光器７２’を有する撮像装置７５により投影壁７６を撮像すれば、検出光の反射光の画像が得られる。このようにして得られた画像に基づいて、検出光進行方向に関して基板周囲部材の上流側で生じたウエハＷ（図示せず）による検出光の遮光の度合いを測定することができる。Ｓｉに吸収される赤外領域の光（例えば波長８８０ｎｍのＬＥＤ光）を検出光として用いた場合、この検出光は、受光部に用いられる受光素子としての半導体デバイスをも加熱する。従って、継続的に保持状態判定を行う場合には、受光部の熱的負担が高くなるおそれがあり、冷却を考慮しなければならない場合がありうる。しかしながら、図４（ａ）、（ｂ）の実施形態によれば、受光器７２’に入射する検出光は十分に弱いため、受光器７２’の冷却を考慮する必要はない。なお、図４（ａ）、（ｂ）の実施形態において、検出光が入射する部分（破線で示す符号７２を付した部分）の冷却が必要となったら、その部分に冷却手段（空冷ファン、ウオータージャケット等）を設ければよい。   Further, as shown in FIGS. 4A and 4B, the detection light can be received using another configuration. In the modified embodiment shown in FIG. 4A, instead of disposing the light receiver 72 (shown by a broken line) on the optical path 74, an imaging device 75 having a light receiver 72 ′ (for example, a CCD array) is used as the detection light. In the region downstream of the substrate peripheral member (here, the outer cup 38) with respect to the traveling direction, it is disposed on the side of the optical path 74. Since the detection light is scattered in the atmosphere, if an image is taken from the side of the optical path 74 and there is detection light on the optical path 74, a linear detection light (detection light scattered light) image can be obtained. . Based on this image, it is possible to measure the degree of shielding of the detection light by the wafer W (not shown) generated on the upstream side of the substrate peripheral member with respect to the detection light traveling direction. In the modified embodiment of FIG. 4B, the projection wall (screen) 76 is arranged along the optical path 74 in a region downstream of the substrate peripheral member (here, the outer cup 38) in the detection light traveling direction. Deploy. If the projection wall 76 is installed so that the surface of the projection wall 76 forms a very slight angle with respect to the optical path 74, the detection light is projected linearly on the surface of the projection wall 76. When the projection wall 76 is imaged by the imaging device 75 having the light receiver 72 ′, an image of reflected light of the detection light is obtained. Based on the image thus obtained, it is possible to measure the degree of shielding of the detection light by the wafer W (not shown) generated on the upstream side of the substrate peripheral member in the detection light traveling direction. When light in the infrared region absorbed by Si (for example, LED light having a wavelength of 880 nm) is used as detection light, the detection light also heats the semiconductor device as a light receiving element used in the light receiving unit. Therefore, when the holding state determination is continuously performed, the thermal burden on the light receiving unit may be increased, and cooling may have to be taken into consideration. However, according to the embodiment of FIGS. 4A and 4B, the detection light incident on the light receiver 72 'is sufficiently weak, and therefore it is not necessary to consider cooling of the light receiver 72'. In the embodiment of FIGS. 4A and 4B, when cooling of a portion where detection light is incident (portion denoted by reference numeral 72 indicated by a broken line) is required, cooling means (air cooling fan, A water jacket or the like may be provided.

３４ 基板保持部材
２０，３０，３１，３４，３８ 基板周囲部材
３１，３８ 基板包囲部材（カップ体）
６１，７１ 投光器
６２，７２，７２’ 受光器
６４，７４ 検出光の光路 34 Substrate holding member 20, 30, 31, 34, 38 Substrate surrounding member 31, 38 Substrate surrounding member (cup body)
61, 71 Projector 62, 72, 72 ′ Receiver 64, 74 Optical path of detection light

Claims (15)

基板処理装置において、
基板を保持する基板保持部材と、
前記基板保持部材に保持された基板の周囲に位置するように設けられた、前記基板処理装置の構成部材である基板周囲部材と、
検出光を照射する投光器と、
前記投光器から照射された検出光を受光する受光器と、を備え、
前記投光器および前記受光器は、前記投光器から前記受光器に向かう検出光の光路が、前記基板保持部材により基板が保持されたときに基板が存在しうる領域を通過し、かつ、前記基板周囲部材を通過する位置に設けられており、
前記投光器から照射される検出光は、前記基板周囲部材を透過し、かつ、基板を透過しない波長を有している、基板処理装置。 In substrate processing equipment,
A substrate holding member for holding the substrate;
A substrate surrounding member, which is a constituent member of the substrate processing apparatus, provided to be located around the substrate held by the substrate holding member;
A projector that emits detection light; and
A light receiver that receives the detection light emitted from the projector, and
In the light projector and the light receiver, an optical path of detection light from the light projector toward the light receiver passes through a region where a substrate can exist when the substrate is held by the substrate holding member, and the substrate peripheral member It is provided at a position that passes through
The substrate processing apparatus, wherein the detection light emitted from the projector has a wavelength that passes through the substrate peripheral member and does not pass through the substrate. 前記基板保持部材に基板が異常な状態で保持された際に前記光路が前記基板により遮られ、かつ、前記基板保持部材に基板が正常な状態で保持された際に、前記光路が前記基板により遮られない位置に、前記投光器および前記受光器が配置されている、請求項１記載の基板処理装置。   The optical path is blocked by the substrate when the substrate is held in an abnormal state by the substrate holding member, and the optical path is blocked by the substrate when the substrate is held by the substrate holding member in a normal state. The substrate processing apparatus according to claim 1, wherein the light projector and the light receiver are arranged at a position where they are not blocked. 前記基板周囲部材には、前記基板保持部材が含まれており、
前記検出光の光路は、正常な状態で基板を保持している前記基板保持部材の先端部を通過する位置に設定されている、請求項２記載の基板処理装置。 The substrate peripheral member includes the substrate holding member,
The substrate processing apparatus according to claim 2, wherein the optical path of the detection light is set at a position that passes through a tip portion of the substrate holding member that holds the substrate in a normal state. 前記基板保持部材に基板が正常に保持された際に、前記光路が前記基板保持部材により保持された基板により遮られる位置に、前記投光器および前記受光器が配置されている、請求項１記載の基板処理装置。   2. The projector and the light receiver according to claim 1, wherein when the substrate is normally held by the substrate holding member, the light projector and the light receiver are arranged at a position where the optical path is blocked by the substrate held by the substrate holding member. Substrate processing equipment. 前記基板保持部材を支持するとともに、前記基板保持部材により保持された基板の下方で基板に近接するプレートをさらに備え、
前記基板周囲部材には、前記プレートが含まれており、
前記検出光の光路は、前記プレートを上下に通過する位置に設定されている、請求項４記載の基板処理装置。 A plate that supports the substrate holding member and that is close to the substrate below the substrate held by the substrate holding member;
The substrate peripheral member includes the plate,
The substrate processing apparatus according to claim 4, wherein an optical path of the detection light is set at a position that passes vertically through the plate. 前記基板保持部材を支持するとともに、前記基板保持部材により保持された基板の下方で基板に近接するプレートをさらに備え、
前記基板周囲部材には、前記プレートと、前記基板保持部材とが含まれており、
前記投光器および前記受光器が２組設けられており、
これら２組の投光器および受光器のうちの第１組の投光器および受光器は、この第１組の投光器から受光器に向かう検出光の光路が、前記基板保持部材に基板が正常な状態で保持された場合には、その基板を通過せず、かつ前記基板保持部材の先端部を通過する一方で、前記基板保持部材に基板が乗り上げた場合には、この第１組の投光器から受光器に向かう検出光の光路が、乗り上げた基板により遮断される位置に設置されており、
これら２組の投光器および受光器のうちの第２組の投光器および受光器は、この第２組の投光器から受光器に向かう検出光の光路が、前記プレートを上下方向に通過する位置に設定され、かつ、この第２組の投光器から受光器に向かう検出光の光路が、前記基板保持部材に基板が正常な状態で保持された場合には、この正常な状態で保持された基板により遮断される位置に設置されている、
請求項１記載の基板処理装置。 A plate that supports the substrate holding member and that is close to the substrate below the substrate held by the substrate holding member;
The substrate peripheral member includes the plate and the substrate holding member,
Two sets of the light projector and the light receiver are provided,
Of these two sets of projectors and receivers, the first set of projectors and receivers is such that the optical path of the detection light from the first set of projectors to the receiver is held by the substrate holding member in a normal state. If the substrate does not pass through the substrate and passes through the tip of the substrate holding member, and the substrate rides on the substrate holding member, the first set of light projectors to the light receiver The optical path of the detection light that is headed is installed at a position that is blocked by the board
Of these two sets of projectors and receivers, the second set of projectors and receivers is set at a position where the optical path of the detection light from the second set of projectors to the receiver passes vertically through the plate. In addition, when the substrate is held in the normal state by the substrate holding member, the optical path of the detection light from the second set of light projectors to the light receiver is blocked by the substrate held in the normal state. Installed at a position
The substrate processing apparatus according to claim 1. 前記基板周囲部材には、前記基板保持部に保持された基板の周囲を包囲する基板包囲部材が含まれており、
前記投光器および前記受光器のうちの少なくとも一方は前記基板包囲部材の外側に配置されている、請求項１〜６のいずれか一項に記載の基板処理装置。 The substrate surrounding member includes a substrate surrounding member that surrounds the periphery of the substrate held by the substrate holding unit,
The substrate processing apparatus according to claim 1, wherein at least one of the light projector and the light receiver is disposed outside the substrate surrounding member. 前記基板保持部に保持された基板に処理液を供給する処理液ノズルと、前記基板保持部を回転させる回転駆動機構と、をさらに備え、
前記基板包囲部材は、前記処理液ノズルから基板に供給されて遠心力により基板の外方に飛散する処理液を受け止めるカップ体であり、前記投光器および前記受光器は前記カップ体の外側に配置されている、請求項７記載の基板処理装置。 A processing liquid nozzle for supplying a processing liquid to the substrate held by the substrate holding unit, and a rotation drive mechanism for rotating the substrate holding unit,
The substrate surrounding member is a cup body that receives a processing liquid that is supplied to the substrate from the processing liquid nozzle and scatters outward of the substrate by a centrifugal force, and the light projector and the light receiver are disposed outside the cup body. The substrate processing apparatus according to claim 7. 前記基板処理装置は、前記基板保持部材および前記基板周囲部材を収容する筐体を有しており、前記投光器は、前記筐体の外側に設置されている、請求項１〜８のいずれか一項に記載の基板処理装置。   The said substrate processing apparatus has a housing | casing which accommodates the said board | substrate holding member and the said board | substrate surrounding member, The said projector is installed in the outer side of the said housing | casing. The substrate processing apparatus according to item. 前記基板がシリコンまたはシリコン化合物からなり、前記光路が通過する前記基板周囲部材が樹脂材料からなる、請求項１〜９のいずれか一項に記載の基板処理装置。   The substrate processing apparatus according to claim 1, wherein the substrate is made of silicon or a silicon compound, and the substrate peripheral member through which the optical path passes is made of a resin material. 前記波長が１１００ｎｍ以下である、請求項１〜１０のいずれか一項に記載の基板処理装置。   The substrate processing apparatus according to claim 1, wherein the wavelength is 1100 nm or less. 前記投光器が発光素子としてＬＥＤ（発光ダイオード）を有している、請求項１〜１１のいずれか一項に記載の基板処理装置。   The substrate processing apparatus according to claim 1, wherein the projector includes an LED (light emitting diode) as a light emitting element. 基板処理方法において、
基板を基板保持部材により保持することと、
投光器から検出光を照射するとともに、当該検出光を受光器により受光して、前記受光器による受光の有無または受光状態に応じて前記基板保持部材による基板の保持状態を判定することと、
前記基板が前記基板保持部材に適切に保持されていると判定された後に、前記基板保持部材に保持された前記基板に処理流体を供給して前記基板に処理を施すことと、
を備え、
前記投光器および前記受光器は、前記投光器から前記受光器に向かう検出光の光路が、前記基板保持部材により基板が保持されたときに基板が存在しうる領域を通過し、かつ、前記基板の周囲に位置する基板処理装置の構成部材である基板周囲部材を通過する位置に設けられており、
前記投光器から照射される検出光は、前記基板周囲部材を透過し、かつ、基板を透過しない波長を有している、基板処理方法。 In the substrate processing method,
Holding the substrate by the substrate holding member;
Irradiating detection light from the projector, receiving the detection light with a light receiver, determining whether the substrate is held by the substrate holding member according to the presence or absence of light reception by the light receiver;
After determining that the substrate is appropriately held by the substrate holding member, supplying a processing fluid to the substrate held by the substrate holding member and processing the substrate;
With
The light projector and the light receiver pass through a region where a substrate can exist when the substrate is held by the substrate holding member, and an optical path of detection light from the light projector to the light receiver, and around the substrate Is provided at a position that passes through a substrate peripheral member that is a component of the substrate processing apparatus located
The substrate processing method, wherein the detection light emitted from the projector has a wavelength that passes through the substrate peripheral member and does not pass through the substrate. 前記基板が前記基板保持部材に保持されていないか若しくは不適切に保持されていると判定されたときには、前記基板の処理は行われず、判定結果が報知される、請求項１３記載の基板処理方法。   The substrate processing method according to claim 13, wherein when it is determined that the substrate is not held or improperly held by the substrate holding member, the substrate is not processed and a determination result is notified. . 前記基板の保持状態の判定は、処理が開始された後も継続して実行され、保持状態に異常が生じたと判定された場合には、前記基板の処理を停止して、判定結果が報知される、請求項１３または１４記載の基板処理方法。   The determination of the holding state of the substrate is continuously performed even after the processing is started. When it is determined that an abnormality has occurred in the holding state, the processing of the substrate is stopped and the determination result is notified. The substrate processing method according to claim 13 or 14.
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