JP2014033100A - 実装方法 - Google Patents
実装方法 Download PDFInfo
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- JP2014033100A JP2014033100A JP2012173094A JP2012173094A JP2014033100A JP 2014033100 A JP2014033100 A JP 2014033100A JP 2012173094 A JP2012173094 A JP 2012173094A JP 2012173094 A JP2012173094 A JP 2012173094A JP 2014033100 A JP2014033100 A JP 2014033100A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
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- H—ELECTRICITY
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Manufacturing & Machinery (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Led Device Packages (AREA)
- Die Bonding (AREA)
Abstract
【解決手段】基板1上に複数個のチップ2を実装する実装方法は、基板1に各チップ2の各々を仮接合する仮接合工程と、基板1に仮接合された各チップ2の各々を基板1に本接合する本接合工程とを備える。仮接合工程は、第1ステップと第2ステップとからなる第1基本工程を、基板1に実装するチップ2の数だけ繰り返す。第1ステップは、基板1の第1金属層11とチップ2の第2金属層21とを位置合わせする。第2ステップは、第2金属層21と第1金属層11とを固相拡散接合することで仮接合する。本接合工程は、基板1に仮接合されている各チップ2の各々の第2金属層21と基板1の各第1金属層11とを液相拡散接合することで各チップ2を一括して基板1に本接合する。
【選択図】図1
Description
2 チップ
11 第1金属層
21 第2金属層
Claims (3)
- 基板上に複数個のチップを実装する実装方法であって、前記基板に前記各チップの各々を仮接合する仮接合工程と、前記基板に仮接合された前記各チップの各々を前記基板に本接合する本接合工程とを備え、前記仮接合工程は、前記基板の第1金属層と前記チップの第2金属層とを位置合わせする第1ステップと、前記第1ステップの後に前記チップ側から加圧して前記チップの前記第2金属層と前記基板の前記第1金属層とを固相拡散接合することで前記基板に前記チップを仮接合する第2ステップとからなる第1基本工程を、前記基板に実装する前記チップの数だけ繰り返し、前記本接合工程では、前記基板に仮接合されている前記各チップの各々の前記第2金属層と前記基板の前記各第1金属層とを液相拡散接合することで前記各チップを一括して前記基板に本接合することを特徴とする実装方法。
- 前記固相拡散接合は、第1規定温度で行い、前記液相拡散接合は、前記第1規定温度よりも高い第2規定温度で行うようにし、前記第2規定温度は、前記各チップ側と前記基板側との少なくとも一方の加熱により到達させる温度であることを特徴とする請求項1記載の実装方法。
- 前記固相拡散接合は、超音波接合もしくは表面活性化接合であることを特徴とする請求項1又は2記載の実装方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012173094A JP2014033100A (ja) | 2012-08-03 | 2012-08-03 | 実装方法 |
PCT/JP2013/001597 WO2014020790A1 (ja) | 2012-08-03 | 2013-03-12 | 実装方法 |
TW102110512A TW201407693A (zh) | 2012-08-03 | 2013-03-25 | 安裝方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012173094A JP2014033100A (ja) | 2012-08-03 | 2012-08-03 | 実装方法 |
Publications (1)
Publication Number | Publication Date |
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JP2014033100A true JP2014033100A (ja) | 2014-02-20 |
Family
ID=50027508
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012173094A Pending JP2014033100A (ja) | 2012-08-03 | 2012-08-03 | 実装方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2014033100A (ja) |
TW (1) | TW201407693A (ja) |
WO (1) | WO2014020790A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016092078A (ja) * | 2014-10-30 | 2016-05-23 | 株式会社東芝 | 半導体チップの接合方法及び半導体チップの接合装置 |
KR20160064334A (ko) * | 2014-11-27 | 2016-06-08 | 한국광기술원 | 형광체 시트를 이용한 발광다이오드 소자 제조방법 |
US10461235B2 (en) | 2016-11-08 | 2019-10-29 | Nichia Corporation | Method of manufacturing semiconductor device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002111191A (ja) * | 2000-10-04 | 2002-04-12 | Hitachi Ltd | はんだ接合方法およびこれを用いた電子回路装置 |
JP2005254244A (ja) * | 2004-03-09 | 2005-09-22 | High Energy Accelerator Research Organization | 電子・陽電子コライダーの加速管の製造方法 |
JP2007027549A (ja) * | 2005-07-20 | 2007-02-01 | Fujitsu Ltd | Icチップ実装方法 |
JP2011200933A (ja) * | 2010-03-26 | 2011-10-13 | Panasonic Electric Works Co Ltd | 接合方法 |
JP2011200930A (ja) * | 2010-03-26 | 2011-10-13 | Gunma Univ | 金属部材の接合方法 |
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2012
- 2012-08-03 JP JP2012173094A patent/JP2014033100A/ja active Pending
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2013
- 2013-03-12 WO PCT/JP2013/001597 patent/WO2014020790A1/ja active Application Filing
- 2013-03-25 TW TW102110512A patent/TW201407693A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002111191A (ja) * | 2000-10-04 | 2002-04-12 | Hitachi Ltd | はんだ接合方法およびこれを用いた電子回路装置 |
JP2005254244A (ja) * | 2004-03-09 | 2005-09-22 | High Energy Accelerator Research Organization | 電子・陽電子コライダーの加速管の製造方法 |
JP2007027549A (ja) * | 2005-07-20 | 2007-02-01 | Fujitsu Ltd | Icチップ実装方法 |
JP2011200933A (ja) * | 2010-03-26 | 2011-10-13 | Panasonic Electric Works Co Ltd | 接合方法 |
JP2011200930A (ja) * | 2010-03-26 | 2011-10-13 | Gunma Univ | 金属部材の接合方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016092078A (ja) * | 2014-10-30 | 2016-05-23 | 株式会社東芝 | 半導体チップの接合方法及び半導体チップの接合装置 |
US10847497B2 (en) | 2014-10-30 | 2020-11-24 | Kabushiki Kaisha Toshiba | Bonding method of semiconductor chip and bonding apparatus of semiconductor chip |
US11018112B2 (en) | 2014-10-30 | 2021-05-25 | Kabushiki Kaisha Toshiba | Bonding method of semiconductor chip and bonding apparatus of semiconductor chip |
KR20160064334A (ko) * | 2014-11-27 | 2016-06-08 | 한국광기술원 | 형광체 시트를 이용한 발광다이오드 소자 제조방법 |
KR101633872B1 (ko) * | 2014-11-27 | 2016-06-28 | 한국광기술원 | 형광체 시트를 이용한 발광다이오드 소자 제조방법 |
US10461235B2 (en) | 2016-11-08 | 2019-10-29 | Nichia Corporation | Method of manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
TW201407693A (zh) | 2014-02-16 |
WO2014020790A1 (ja) | 2014-02-06 |
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