JP2013541273A - 懸架されたビーム及びビームの変位を検出するピエゾ抵抗手段を有するデバイス及びデバイスを製造する方法 - Google Patents
懸架されたビーム及びビームの変位を検出するピエゾ抵抗手段を有するデバイス及びデバイスを製造する方法 Download PDFInfo
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
- H02N2/18—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
- H02N2/22—Methods relating to manufacturing, e.g. assembling, calibration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02259—Driving or detection means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0271—Resonators; ultrasonic resonators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0109—Bridges
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02433—Means for compensation or elimination of undesired effects
- H03H2009/0244—Anchor loss
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02488—Vibration modes
- H03H2009/02496—Horizontal, i.e. parallel to the substrate plane
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
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- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
−少なくとも1つの埋め込み部4(実際には、図示されるように、示されている例では第2の埋め込み部5が提供されている)を通して基板に接続されたビームの形状である共振器2、
−共振器を駆動させる固定電極6、
−共振器に対して交流電圧を電極に伝達させ、このとき、図1の二重矢印9で示されるように、この共振器が基板表面の平面に対して平行に振動するようにする、交流電圧源8、
−ピエゾ抵抗材料からなる懸架されたひずみゲージ10、及び
−ゲージ10に印加された応力を測定する手段12を含む。
4、5 埋め込み部
6 固定電極
8 交流電圧源
10 ひずみゲージ
12 応力測定手段
14 支持部
16 ビーム
18 変位検出手段
20、22 ピエゾ抵抗ひずみゲージ
24、26 アンカー
28 ビーム端部
30 ビーム上の点
32 駆動手段
34 電極
36 交流電圧源
39 読み出し手段
40、42、44、46 ピエゾ抵抗ゲージ
48、50、52、54 アンカー
56、58、60、62 電極
64 中央部
66、68 端部
70、72、74、76 ピエゾ抵抗ゲージ
78、80、82、84 アンカー
88、90、92、94 ピエゾ抵抗ゲージ
96、98、100、102 アンカー
104、106、108、110 電極
138 細胞
140 自由端
142 基板
144 犠牲層
146 シリコン層
149 機械的構造
150 ゲージ
152 共振器
154 犠牲層
156 層
158 感光性樹脂マスク
160 パターン
Claims (10)
- −ほぼ平面上の表面を含む支持部(14)、
−前記支持部から懸架され、前記支持部の表面の平面に対して平行に動作することが可能なビーム(16;64−66−68)、及び
−前記支持部から懸架された少なくとも2つのほぼ直線状のピエゾ抵抗ひずみゲージ(20、22;40、42、44、46;70、72、74、76;88、90、92、94)を含み、2つの前記ひずみゲージが互いに直線状に配置されない、ビームの変位を検出するための手段(18)を含み、
前記ビーム(16;64−66−68)が、前記検出手段(18)を通して前記支持部(14)から懸架され、そのため前記支持部に直接固定されておらず、
前記少なくとも2つのひずみゲージが、前記ビームの2つの対向する側面方向表面にそれぞれ位置することを特徴とする、懸架されたビーム及び前記ビームの変位を検出するピエゾ抵抗手段を有するデバイス。 - 前記ひずみゲージのそれぞれが、少なくとも1つのピエゾ抵抗材料を含む積層体を含む、請求項1に記載のデバイス。
- 前記ビーム(16;64−66−68)が、共振器を形成し、前記デバイスが、前記ビームを駆動する手段(34)をさらに含む、請求項1及び2のいずれかに記載のデバイス。
- 前記ビーム駆動手段(34)が、静電的である、請求項3に記載のデバイス。
- 前記ビーム(16)が、一定の断面を有する、請求項1から4のいずれか一項に記載のデバイス。
- 前記ビーム(64−66−68)が、変化する断面を有する、請求項1から4のいずれか一項に記載のデバイス。
- 前記ビーム(16)の2つの端部が、前記支持部(14)の表面の平面に対して平行に運動することができ、前記ひずみゲージ(40、42、44、46)が、前記ビームの2つの前記端部から離隔されている、請求項1から6のいずれか一項に記載のデバイス。
- 前記少なくとも2つのひずみゲージ(40−42、44−46;88−92、90−94)をそれぞれ含む2つのグループを含み、前記2つのグループが、前記ビーム(16)の2つの対向する側面上にそれぞれ配置される、請求項1から7のいずれか一項に記載のデバイス。
- 前記ひずみゲージのすくなくとも1つ(88、90)が弾性的である、請求項1から8のいずれか一項に記載のデバイス。
- 前記ビーム及び前記ひずみゲージが、表面技術を用いて形成される、請求項1から9のいずれか一項に記載のデバイスの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1057249 | 2010-09-13 | ||
FR1057249A FR2964651B1 (fr) | 2010-09-13 | 2010-09-13 | Dispositif a poutre suspendue et moyens de detection piezoresistive du deplacement de celle-ci, et procede de fabrication du dispositif |
PCT/EP2011/065687 WO2012034951A1 (fr) | 2010-09-13 | 2011-09-09 | Dispositif a poutre suspendue et moyens de detection piezoresistive du deplacement de celle-ci, et procede de fabrication du dispositif |
Publications (2)
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JP2013541273A true JP2013541273A (ja) | 2013-11-07 |
JP5883871B2 JP5883871B2 (ja) | 2016-03-15 |
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JP2013527626A Active JP5883871B2 (ja) | 2010-09-13 | 2011-09-09 | 懸架されたビーム及びビームの変位を検出するピエゾ抵抗手段を有するデバイス及びデバイスを製造する方法 |
Country Status (5)
Country | Link |
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US (1) | US9331606B2 (ja) |
EP (1) | EP2617129B1 (ja) |
JP (1) | JP5883871B2 (ja) |
FR (1) | FR2964651B1 (ja) |
WO (1) | WO2012034951A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP7422770B2 (ja) | 2018-12-17 | 2024-01-26 | ソクプラ サイエンシズ イーティー ジェニー エス.イー.シー. | ニューロモルフィックmemsデバイス |
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FR2995691B1 (fr) | 2012-09-19 | 2014-10-10 | Commissariat Energie Atomique | Capteur de flux thermique, capteur de gaz comportant au moins un tel capteur et jauge pirani comportant au moins un tel capteur |
FR2996219B1 (fr) | 2012-10-02 | 2014-10-03 | Commissariat Energie Atomique | Systeme de mesure comprenant un reseau de resonateurs de type nano-systeme electromecanique |
FR3003083B1 (fr) | 2013-03-11 | 2015-04-10 | Commissariat Energie Atomique | Dispositif de determination de la masse d'une particule en suspension ou en solution dans un fluide |
FR3004874B1 (fr) | 2013-04-17 | 2015-04-03 | Commissariat Energie Atomique | Circuit de mesure de frequence de resonance de nano-resonateurs |
WO2015059511A1 (en) | 2013-10-22 | 2015-04-30 | Commissariat à l'énergie atomique et aux énergies alternatives | Optomechanical device with mechanical elements and optical filters for actuating and/or detecting the movement of the elements |
EP2866000B1 (fr) | 2013-10-22 | 2020-03-11 | Commissariat à l'Énergie Atomique et aux Énergies Alternatives | Dispositif optomécanique d'actionnement et/ou de détection du déplacement d'un élément mécanique, notamment pour la détection gravimétrique |
FR3012124B1 (fr) | 2013-10-22 | 2017-12-15 | Commissariat Energie Atomique | Dispositif de detection electromecanique, pour la detection gravimetrique, et procede de fabrication du dispositif |
WO2015082956A1 (en) | 2013-12-02 | 2015-06-11 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | System and method for analyzing a gas |
FR3017463B1 (fr) | 2014-02-13 | 2020-11-13 | Commissariat Energie Atomique | Capteur de concentration de gaz a structure suspendue |
FR3030942A1 (fr) | 2014-12-22 | 2016-06-24 | Commissariat Energie Atomique | Oscillateur multi-mode permettant un suivi simultane des variations de plusieurs frequences de resonance d'un resonateur |
FR3078165B1 (fr) | 2018-02-19 | 2020-03-06 | Apix Analytics | Procede d'analyse d'hydrocarbures |
FR3078164B1 (fr) | 2018-02-19 | 2020-02-14 | Apix Analytics | Detecteur pour la chromatographie en phase gazeuse |
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JP2007175577A (ja) * | 2005-12-27 | 2007-07-12 | Seiko Epson Corp | Mems振動子 |
JP2010021210A (ja) * | 2008-07-08 | 2010-01-28 | Hitachi Ltd | 微小電気機械システムの実装方法 |
WO2010015963A1 (en) * | 2008-08-08 | 2010-02-11 | Nxp B.V. | An electromechanical transducer and a method of providing an electromechanical transducer |
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US6578410B1 (en) * | 2001-08-10 | 2003-06-17 | Jacob Israelachvili | Resistive cantilever spring for probe microscopy |
JP4303091B2 (ja) * | 2003-11-10 | 2009-07-29 | ニッタ株式会社 | 歪みゲージ型センサおよびこれを利用した歪みゲージ型センサユニット |
US7279131B2 (en) * | 2004-07-01 | 2007-10-09 | Uop Llc | Method and apparatus for mass analysis of samples |
FR2917731B1 (fr) * | 2007-06-25 | 2009-10-23 | Commissariat Energie Atomique | Dispositif resonant a detection piezoresistive realise en technologies de surface |
ATE513362T1 (de) | 2007-11-19 | 2011-07-15 | Nxp Bv | Resonator |
FR2964653B1 (fr) * | 2010-09-13 | 2012-10-12 | Commissariat Energie Atomique | Dispositif resonant a actionnement dans le plan, et procede de fabrication du dispositif |
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- 2010-09-13 FR FR1057249A patent/FR2964651B1/fr not_active Expired - Fee Related
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- 2011-09-09 US US13/821,701 patent/US9331606B2/en active Active
- 2011-09-09 EP EP11752575.8A patent/EP2617129B1/fr active Active
- 2011-09-09 WO PCT/EP2011/065687 patent/WO2012034951A1/fr active Application Filing
- 2011-09-09 JP JP2013527626A patent/JP5883871B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007175577A (ja) * | 2005-12-27 | 2007-07-12 | Seiko Epson Corp | Mems振動子 |
JP2010021210A (ja) * | 2008-07-08 | 2010-01-28 | Hitachi Ltd | 微小電気機械システムの実装方法 |
WO2010015963A1 (en) * | 2008-08-08 | 2010-02-11 | Nxp B.V. | An electromechanical transducer and a method of providing an electromechanical transducer |
Cited By (1)
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JP7422770B2 (ja) | 2018-12-17 | 2024-01-26 | ソクプラ サイエンシズ イーティー ジェニー エス.イー.シー. | ニューロモルフィックmemsデバイス |
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FR2964651B1 (fr) | 2015-05-15 |
EP2617129B1 (fr) | 2014-07-23 |
US20130214644A1 (en) | 2013-08-22 |
JP5883871B2 (ja) | 2016-03-15 |
WO2012034951A1 (fr) | 2012-03-22 |
FR2964651A1 (fr) | 2012-03-16 |
US9331606B2 (en) | 2016-05-03 |
EP2617129A1 (fr) | 2013-07-24 |
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