JP2013520824A - 半導体チップおよび変換要素を備えた放射線放出装置ならびにその製造方法 - Google Patents
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 132
- 230000005855 radiation Effects 0.000 title claims abstract description 121
- 239000004065 semiconductor Substances 0.000 title claims abstract description 118
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000011159 matrix material Substances 0.000 claims abstract description 103
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 34
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 19
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims abstract description 12
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims abstract description 8
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims abstract description 8
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 73
- 239000010410 layer Substances 0.000 claims description 49
- 150000001875 compounds Chemical class 0.000 claims description 22
- 238000004382 potting Methods 0.000 claims description 12
- 239000012790 adhesive layer Substances 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 230000001747 exhibiting effect Effects 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 3
- 239000011521 glass Substances 0.000 description 53
- 238000011161 development Methods 0.000 description 12
- 230000018109 developmental process Effects 0.000 description 12
- 238000002844 melting Methods 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 230000008018 melting Effects 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 229910052810 boron oxide Inorganic materials 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- -1 nitride compound Chemical class 0.000 description 5
- 238000007493 shaping process Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000005204 segregation Methods 0.000 description 3
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 239000004904 UV filter Substances 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229940125782 compound 2 Drugs 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 239000005365 phosphate glass Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- SITVSCPRJNYAGV-UHFFFAOYSA-L tellurite Chemical compound [O-][Te]([O-])=O SITVSCPRJNYAGV-UHFFFAOYSA-L 0.000 description 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H01L33/50—Wavelength conversion elements
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Abstract
【選択図】 図1
Description
本特許出願は、独国特許出願第102010009456.0号の優先権を主張し、この文書の開示内容は参照によって本明細書に組み込まれている。
− 半導体チップを形成するステップであって、半導体チップが、電磁放射線を生成するのに適している活性層と、放射線出口面とを備えている、半導体チップ形成ステップと、
− 半導体チップの放射線出口面の上に変換要素を形成するステップであって、変換要素が、テルル含有ガラスのマトリックス材料と、ルミネセンス材料とを備えている、変換要素形成ステップと、
を含んでいる、方法。
− 半導体チップ1を形成するステップであって、半導体チップが活性層および放射線出口面11を備えている、半導体チップ形成ステップと、
− 放射線出口面11の上に変換要素2を形成するステップであって、変換要素2が、テルル含有ガラスのマトリックス材料2aと、好ましくはマトリックス材料2aに埋め込まれているルミネセンス材料2bと、を備えている、変換要素形成ステップと、
を含んでいる、方法。
Claims (15)
- 半導体チップ(1)および変換要素(2)を備えた放射線放出装置(10)であって、
前記半導体チップ(1)が、電磁放射線を生成するのに適している活性層と、放射線出口面(11)と、を備えており、
前記変換要素(2)が、マトリックス材料(2a)およびルミネセンス材料(2b)を備えており、前記マトリックス材料(2a)が、少なくとも40重量%の酸化テルルを含んでおり、三酸化ホウ素もしくは酸化ゲルマニウムまたはその両方を含んでおらず、
前記変換要素(2)が、前記半導体チップ(1)の前記放射線出口面(11)の下流に配置されている、
放射線放出装置。 - 前記変換要素(2)が、前記半導体チップ(1)の前記放射線出口面(11)に直接配置されている、
請求項1に記載の放射線放出装置。 - 前記変換要素(2)と、前記半導体チップ(1)の前記放射線出口面(11)との間に、間隔が配置されている、
請求項1に記載の放射線放出装置。 - 前記マトリックス材料(2a)が、少なくとも75重量%の酸化テルルを含んでいる、
請求項1から請求項3のいずれかに記載の放射線放出装置。 - 前記マトリックス材料(2a)が、リン−テルルもしくは銀−リン−テルルまたはその両方を含んでいる、
請求項1から請求項4のいずれかに記載の放射線放出装置。 - 前記マトリックス材料(2a)が、前記マトリックス材料(2a)の屈折率を増大させる少なくとも1種類の追加の要素(2c)を備えている、
請求項1から請求項5のいずれかに記載の放射線放出装置。 - 前記マトリックス材料(2a)が、2より大きい屈折率(n)を示す、
請求項1から請求項6のいずれかに記載の放射線放出装置。 - 放射線吸収特性を示す少なくとも1層の追加の層(3)が、前記変換要素(2)の下流に配置されている、
請求項1から請求項7のいずれかに記載の放射線放出装置。 - 前記マトリックス材料(2a)の軟化温度が350℃以下である、
請求項1から請求項8のいずれかに記載の放射線放出装置。 - 前記変換要素(2)または前記マトリックス材料が接着層の形をとる、
請求項1から請求項9のいずれかに記載の放射線放出装置。 - 前記変換要素(2)がウェハの形をとる、または、前記変換要素(2)が、前記半導体チップ(1)が埋め込まれたポッティング化合物によって形成されている、
請求項1から請求項10のいずれかに記載の放射線放出装置。 - 前記変換要素(2)がビーム形成要素の形をとる、
請求項1から請求項11のいずれかに記載の放射線放出装置。 - 放射線放出装置(10)の製造方法であって、
電磁放射線を生成するのに適している活性層と、放射線出口面(11)とを備えている、半導体チップ(1)を形成するステップと、
前記半導体チップ(1)の前記放射線出口面(11)の上に変換要素(2)を形成するステップであって、前記変換要素が、マトリックス材料(2a)およびルミネセンス材料(2b)を備えており、前記マトリックス材料(2a)が、少なくとも40重量%の酸化テルルを含んでおり、三酸化ホウ素もしくは酸化ゲルマニウムまたはその両方を含んでいない、前記変換要素形成ステップと、
を含んでいる、放射線放出装置の製造方法。 - 前記変換要素形成ステップが、
前記半導体チップ(1)の前記放射線出口面(11)の上に前記マトリックス材料(2a)を直接塗布し、次いで、前記マトリックス材料(2a)を前記ルミネセンス材料(2b)によってコーティングするステップであって、前記ルミネセンス材料(2b)が前記マトリックス材料(2a)の中に沈む、前記ステップ、
を含んでいる、請求項13に記載の放射線放出装置の製造方法。 - 均一な放出パターンが得られるように、前記マトリックス材料(2a)が前記ルミネセンス材料(2b)によって意図的に不均一にコーティングされる、
請求項14に記載の放射線放出装置の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE102010009456A DE102010009456A1 (de) | 2010-02-26 | 2010-02-26 | Strahlungsemittierendes Bauelement mit einem Halbleiterchip und einem Konversionselement und Verfahren zu dessen Herstellung |
DE102010009456.0 | 2010-02-26 | ||
PCT/EP2011/052851 WO2011104364A1 (de) | 2010-02-26 | 2011-02-25 | Strahlungsemittierendes bauelement mit einem halbleiterchip und einem konversionselement und verfahren zu dessen herstellung |
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JP2013520824A true JP2013520824A (ja) | 2013-06-06 |
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JP2012554356A Pending JP2013520824A (ja) | 2010-02-26 | 2011-02-25 | 半導体チップおよび変換要素を備えた放射線放出装置ならびにその製造方法 |
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US (1) | US8890140B2 (ja) |
JP (1) | JP2013520824A (ja) |
KR (1) | KR101825044B1 (ja) |
CN (1) | CN102782888B (ja) |
DE (2) | DE102010009456A1 (ja) |
WO (1) | WO2011104364A1 (ja) |
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JP2020074419A (ja) * | 2013-07-08 | 2020-05-14 | ルミレッズ ホールディング ベーフェー | 波長変換式半導体発光デバイス |
US11172176B2 (en) | 2019-03-18 | 2021-11-09 | Seiko Epson Corporation | Wavelength conversion element, light source device, projector, and method of manufacturing wavelength conversion element |
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JP2005011933A (ja) * | 2003-06-18 | 2005-01-13 | Asahi Glass Co Ltd | 発光ダイオード素子 |
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2011
- 2011-02-25 CN CN201180011327.3A patent/CN102782888B/zh not_active Expired - Fee Related
- 2011-02-25 WO PCT/EP2011/052851 patent/WO2011104364A1/de active Application Filing
- 2011-02-25 DE DE112011100677T patent/DE112011100677A5/de not_active Withdrawn
- 2011-02-25 KR KR1020127025316A patent/KR101825044B1/ko active IP Right Grant
- 2011-02-25 US US13/580,858 patent/US8890140B2/en not_active Expired - Fee Related
- 2011-02-25 JP JP2012554356A patent/JP2013520824A/ja active Pending
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Cited By (4)
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JP2020074419A (ja) * | 2013-07-08 | 2020-05-14 | ルミレッズ ホールディング ベーフェー | 波長変換式半導体発光デバイス |
JP2017504061A (ja) * | 2013-12-19 | 2017-02-02 | オスラム ゲーエムベーハーOSRAM GmbH | 変換素子、コンポーネントおよびコンポーネントを製造するための方法 |
US11172176B2 (en) | 2019-03-18 | 2021-11-09 | Seiko Epson Corporation | Wavelength conversion element, light source device, projector, and method of manufacturing wavelength conversion element |
US11572502B2 (en) | 2019-03-18 | 2023-02-07 | Seiko Epson Corporation | Wavelength conversion element, light source device, projector, and method of manufacturing wavelength conversion element |
Also Published As
Publication number | Publication date |
---|---|
CN102782888A (zh) | 2012-11-14 |
DE112011100677A5 (de) | 2013-03-07 |
US20130056725A1 (en) | 2013-03-07 |
DE102010009456A1 (de) | 2011-09-01 |
CN102782888B (zh) | 2015-12-02 |
KR20130023208A (ko) | 2013-03-07 |
WO2011104364A1 (de) | 2011-09-01 |
KR101825044B1 (ko) | 2018-02-02 |
US8890140B2 (en) | 2014-11-18 |
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