JP2013514290A - インジウムクロロジアルコキシドの製造方法 - Google Patents
インジウムクロロジアルコキシドの製造方法 Download PDFInfo
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- JP2013514290A JP2013514290A JP2012543537A JP2012543537A JP2013514290A JP 2013514290 A JP2013514290 A JP 2013514290A JP 2012543537 A JP2012543537 A JP 2012543537A JP 2012543537 A JP2012543537 A JP 2012543537A JP 2013514290 A JP2013514290 A JP 2013514290A
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- 229910052738 indium Inorganic materials 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000000034 method Methods 0.000 claims abstract description 32
- -1 indium (III) halogen Chemical class 0.000 claims abstract description 29
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 19
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 15
- 125000004183 alkoxy alkyl group Chemical group 0.000 claims abstract description 12
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 12
- 229910052794 bromium Inorganic materials 0.000 claims abstract description 7
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 6
- 229910052740 iodine Inorganic materials 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 39
- 239000000203 mixture Substances 0.000 claims description 28
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 21
- 229910003437 indium oxide Inorganic materials 0.000 claims description 19
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 150000003335 secondary amines Chemical class 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 14
- 229910021617 Indium monochloride Inorganic materials 0.000 claims description 12
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000002612 dispersion medium Substances 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 7
- 150000002367 halogens Chemical class 0.000 claims description 6
- KLRHPHDUDFIRKB-UHFFFAOYSA-M indium(i) bromide Chemical compound [Br-].[In+] KLRHPHDUDFIRKB-UHFFFAOYSA-M 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 4
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 229910001851 flerovium Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 abstract description 6
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 13
- 238000003786 synthesis reaction Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000002243 precursor Substances 0.000 description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- 150000004703 alkoxides Chemical group 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- 239000002585 base Substances 0.000 description 6
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000007858 starting material Substances 0.000 description 5
- 125000003158 alcohol group Chemical group 0.000 description 4
- 150000001298 alcohols Chemical class 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000013067 intermediate product Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 239000003849 aromatic solvent Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002471 indium Chemical class 0.000 description 2
- 229910001449 indium ion Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- ITNVWQNWHXEMNS-UHFFFAOYSA-N methanolate;titanium(4+) Chemical compound [Ti+4].[O-]C.[O-]C.[O-]C.[O-]C ITNVWQNWHXEMNS-UHFFFAOYSA-N 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 125000006732 (C1-C15) alkyl group Chemical group 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- HQPSKTOGFFYYKN-UHFFFAOYSA-N CC(C)[Na] Chemical compound CC(C)[Na] HQPSKTOGFFYYKN-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 239000000010 aprotic solvent Substances 0.000 description 1
- 239000008346 aqueous phase Substances 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 150000008378 aryl ethers Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000009838 combustion analysis Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RJMMFJHMVBOLGY-UHFFFAOYSA-N indium(3+) Chemical compound [In+3] RJMMFJHMVBOLGY-UHFFFAOYSA-N 0.000 description 1
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- HZVOZRGWRWCICA-UHFFFAOYSA-N methanediyl Chemical compound [CH2] HZVOZRGWRWCICA-UHFFFAOYSA-N 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- LYGJENNIWJXYER-UHFFFAOYSA-N nitromethane Chemical compound C[N+]([O-])=O LYGJENNIWJXYER-UHFFFAOYSA-N 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- 125000005429 oxyalkyl group Chemical group 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical class C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000010626 work up procedure Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/003—Compounds containing elements of Groups 3 or 13 of the Periodic Table without C-Metal linkages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
Description
500mlのガラス丸底フラスコの残留湿分中で、5.0gの塩化インジウム(III)(InCl3、22.5mmol)を、保護ガス雰囲気下で、250mlの乾燥メタノール中で攪拌することにより溶解し、その際、InCl3の残留物は<10質量%(正味質量に関する)残る。塩基であるジメチルアミン(5.0g、111mmolに相当する)の計量供給は、質量流調整器により保証され、かつInCl3に関する化学量論量で、室温で5時間に亘って添加し、その際、当初わずかな発熱反応が観察された。引き続いてこの溶液を完全に蒸発させ、残留する固体を250mlの乾燥メタノールを用いて取り上げ、保護ガスN2下で濾過し、乾燥メタノールで数回に亘って(>10パス)洗浄し、かつ真空下(<10mbar)で、室温で12時間に亘って乾燥させた。生成物収率は、インジウム(III)クロロジメトキシドについて>80モル%であった(ICP−OESを介して測定されたインジウム含量、塩素含量は銀測定により、炭素および水素含量は、燃焼分析を介して測定する)。図1は、生成物および使用された出発材料InCl3のIR−スペクトルを示す。
Claims (11)
- 一般式
InX(OR)2
[式中、XはF、Cl、Br、Iであり、かつRはアルキル基、アルキルオキシアルキル基である]のインジウム(III)ハロゲンジアルコキシドの製造方法において、インジウム三ハロゲン化物InX3[式中、XはFl、Cl、Brおよび/またはIである]および一般式ROH[式中、Rはアルキル基、アルキルオキシアルキル基である]の少なくとも1種のアルコールを含む組成物(A)と、一般式R’2NH[式中、R’はアルキル基である]の少なくとも1種の第2級アミンを含む組成物(B)を反応させる、前記製造方法。 - インジウム三ハロゲン化物を、InF3、InCl3、InBr3およびInI3からなる群から選択する、請求項1に記載の方法。
- インジウム三ハロゲン化物InX3を、組成物(A)の全質量に対して0.1〜50質量%の割合で使用する、請求項1または2に記載の方法。
- アルコールROHが、C1〜C15−アルキル基またはC1〜C15−アルキルオキシアルキル基から選択された基Rを有する、請求項1から3までのいずれか1項に記載の方法。
- アルコールROHを、組成物(A)の全質量に対して50〜99.9質量%の割合で使用する、請求項1から4までのいずれか1項に記載の方法。
- 組成物(A)が、反応について不活性の液体溶剤または分散媒体を更に少なくとも1種有する、請求項1から5までのいずれか1項に記載の方法。
- 一般式R’2NHの第2級アミンが、C1〜C10−アルキル基から成る基から選択された基R’を有する第2級アミンである、請求項1から6までのいずれか1項に記載の方法。
- 一般式R’2NHの第2級アミンを、インジウム三ハロゲン化物に対して少なくとも2倍の化学量論量で使用する、請求項1から6までのいずれか1項に記載の方法。
- 請求項1から8までのいずれか1項に記載の方法によって製造可能な、一般式InX(OR)2のインジウム(III)ハロゲンジアルコキシド。
- 酸化インジウム含有コーティングを製造するための、請求項9に記載の一般式InX(OR)2の少なくとも1種のインジウム(III)ハロゲンジアルコキシドの使用。
- 電子素子のための半導体膜または導体膜を製造するため、特に(薄膜)トランジスタ、ダイオードまたは太陽電池を製造するための、請求項9に記載の一般式InX(OR)2の少なくとも1種のインジウム(III)ハロゲンジアルコキシドの使用。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009054998A DE102009054998A1 (de) | 2009-12-18 | 2009-12-18 | Verfahren zur Herstellung von Indiumchlordialkoxiden |
DE102009054998.6 | 2009-12-18 | ||
PCT/EP2010/059376 WO2011072887A1 (de) | 2009-12-18 | 2010-07-01 | Verfahren zur herstellung von indiumchlordialkoxiden |
Publications (2)
Publication Number | Publication Date |
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JP2013514290A true JP2013514290A (ja) | 2013-04-25 |
JP5575263B2 JP5575263B2 (ja) | 2014-08-20 |
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Application Number | Title | Priority Date | Filing Date |
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JP2012543537A Expired - Fee Related JP5575263B2 (ja) | 2009-12-18 | 2010-07-01 | インジウムクロロジアルコキシドの製造方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US8580989B2 (ja) |
EP (1) | EP2513120B1 (ja) |
JP (1) | JP5575263B2 (ja) |
KR (1) | KR101720371B1 (ja) |
CN (1) | CN102652137B (ja) |
DE (1) | DE102009054998A1 (ja) |
RU (1) | RU2541539C2 (ja) |
TW (1) | TWI519510B (ja) |
WO (1) | WO2011072887A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016169150A (ja) * | 2010-11-10 | 2016-09-23 | エボニック デグサ ゲーエムベーハーEvonik Degussa GmbH | 酸化インジウム含有層の製造方法 |
JP2016530225A (ja) * | 2013-06-25 | 2016-09-29 | エボニック デグサ ゲーエムベーハーEvonik Degussa GmbH | インジウムアルコキシド化合物を製造するための方法、当該方法に従って製造可能なインジウムアルコキシド化合物及び当該化合物の使用 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007018431A1 (de) * | 2007-04-19 | 2008-10-30 | Evonik Degussa Gmbh | Pyrogenes Zinkoxid enthaltender Verbund von Schichten und diesen Verbund aufweisender Feldeffekttransistor |
DE102008058040A1 (de) * | 2008-11-18 | 2010-05-27 | Evonik Degussa Gmbh | Formulierungen enthaltend ein Gemisch von ZnO-Cubanen und sie einsetzendes Verfahren zur Herstellung halbleitender ZnO-Schichten |
DE102009028802B3 (de) | 2009-08-21 | 2011-03-24 | Evonik Degussa Gmbh | Verfahren zur Herstellung Metalloxid-haltiger Schichten, nach dem Verfahren herstellbare Metalloxid-haltige Schicht und deren Verwendung |
DE102010031592A1 (de) | 2010-07-21 | 2012-01-26 | Evonik Degussa Gmbh | Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten |
DE102010031895A1 (de) | 2010-07-21 | 2012-01-26 | Evonik Degussa Gmbh | Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten |
DE102012209918A1 (de) | 2012-06-13 | 2013-12-19 | Evonik Industries Ag | Verfahren zur Herstellung Indiumoxid-haltiger Schichten |
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- 2010-07-01 EP EP10726542.3A patent/EP2513120B1/de not_active Not-in-force
- 2010-07-01 US US13/515,007 patent/US8580989B2/en active Active
- 2010-07-01 RU RU2012130177/04A patent/RU2541539C2/ru not_active IP Right Cessation
- 2010-07-01 WO PCT/EP2010/059376 patent/WO2011072887A1/de active Application Filing
- 2010-07-01 KR KR1020127015505A patent/KR101720371B1/ko active IP Right Grant
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Also Published As
Publication number | Publication date |
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TW201136877A (en) | 2011-11-01 |
EP2513120B1 (de) | 2017-08-30 |
DE102009054998A1 (de) | 2011-06-22 |
KR20120104998A (ko) | 2012-09-24 |
EP2513120A1 (de) | 2012-10-24 |
RU2541539C2 (ru) | 2015-02-20 |
TWI519510B (zh) | 2016-02-01 |
JP5575263B2 (ja) | 2014-08-20 |
WO2011072887A1 (de) | 2011-06-23 |
KR101720371B1 (ko) | 2017-03-27 |
RU2012130177A (ru) | 2014-01-27 |
US8580989B2 (en) | 2013-11-12 |
US20120289728A1 (en) | 2012-11-15 |
CN102652137A (zh) | 2012-08-29 |
CN102652137B (zh) | 2015-12-02 |
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