JP2013211415A - レーザアニール装置及びレーザアニール方法 - Google Patents
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- 238000005224 laser annealing Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 19
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 38
- 230000003287 optical effect Effects 0.000 claims abstract description 29
- 230000001678 irradiating effect Effects 0.000 claims abstract description 11
- 238000000137 annealing Methods 0.000 claims description 22
- 230000002194 synthesizing effect Effects 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 description 13
- 238000005286 illumination Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 1
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- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
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Abstract
【解決手段】アモルファスシリコン膜5にレーザ光を照射してアニール処理するレーザアニール装置であって、一定のパルス幅を有する一定波長の第1のレーザ光L1を発生する第1のパルスレーザ6と、前記第1のレーザ光L1よりもパルス幅及び波長の長い第2のレーザ光L2を発生する第2のパルスレーザ7と、前記第1のレーザ光L1と前記第2のレーザ光L2とを同一の光軸に合成する合成手段8と、前記第1及び第2のパルスレーザ6,7に作用して前記第1及び第2のレーザ光L1,L2の発生タイミングを制御する制御手段3と、を備え、前記制御手段3は、前記第1のレーザ光L1が前記第2のレーザ光L2のパルス幅内の予め定められたタイミングで発生するように前記第1のパルスレーザ6を制御するものである。
【選択図】図1
Description
先ず、表面にアモルファスシリコン膜5を成膜した基板4を上面に載置した図示省略のステージが、その上面に平行な面内を二次元方向に移動されて基板4上の被アニール領域の中心が照明光学系2の光軸に合致される。
図8に示すように、一般に、シリコン(Si)は、レーザ光の波長が長くなるほど光吸収率が低下することが知られている。したがって、一般に、アモルファスシリコン膜5をアニール処理する場合には、光吸収率の高い、例えば波長が355nm等の紫外線のレーザ光が使用されている。
5…アモルファスシリコン膜
6…第1のパルスレーザ
7…第2のパルスレーザ
8…合成手段
L1…第1のレーザ光
L2…第2のレーザ光
Claims (5)
- アモルファスシリコン膜にレーザ光を照射してアニール処理するレーザアニール装置であって、
一定のパルス幅を有する一定波長の第1のレーザ光を発生する第1のパルスレーザと、
前記第1のレーザ光よりもパルス幅及び波長の長い第2のレーザ光を発生する第2のパルスレーザと、
前記第1のレーザ光と前記第2のレーザ光とを同一の光軸に合成する合成手段と、
前記第1及び第2のパルスレーザに作用して前記第1及び第2のレーザ光の発生タイミングを制御する制御手段と、
を備え、
前記制御手段は、前記第1のレーザ光が前記第2のレーザ光のパルス幅内の予め定められたタイミングで発生するように前記第1のパルスレーザを制御することを特徴とするレーザアニール装置。 - 前記制御手段は、前記第1のパルスレーザを制御して前記第1のレーザ光の発生タイミングを前記第2のレーザ光のパルス幅内で調整可能にしたことを特徴とする請求項1記載のレーザアニール装置。
- 前記第1のパルスレーザは、波長が355nm又は532nmの前記第1のレーザ光を発生し、
前記第2のパルスレーザは、波長が1064nmの前記第2のレーザ光を発生する、
ことを特徴とする請求項1又は2記載のレーザアニール装置。 - 一定のパルス幅を有する一定波長の第1のレーザ光と、前記第1のレーザ光よりもパルス幅及び波長の長い第2のレーザ光とを同一の光軸に合成してアモルファスシリコン膜に照射し、アニール処理するレーザアニール方法であって、
前記第2のレーザ光を発生して前記アモルファスシリコン膜に照射する段階と、
前記第1のレーザ光を前記第2のレーザ光のパルス幅内の予め定められたタイミングで発生して前記アモルファスシリコン膜に照射する段階と、
を行うことを特徴とするレーザアニール方法。 - 前記第1のレーザ光は、波長が355nm又は532nmであり、
前記第2のレーザ光は、波長が1064nmである、
ことを特徴とする請求項4記載のレーザアニール方法。
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JP2012080706A JP6167358B2 (ja) | 2012-03-30 | 2012-03-30 | レーザアニール装置及びレーザアニール方法 |
KR1020147030252A KR102054026B1 (ko) | 2012-03-30 | 2013-03-08 | 레이저 어닐 장치 및 레이저 어닐 방법 |
CN201380017446.9A CN104272434B (zh) | 2012-03-30 | 2013-03-08 | 激光退火装置及激光退火方法 |
PCT/JP2013/056496 WO2013146197A1 (ja) | 2012-03-30 | 2013-03-08 | レーザアニール装置及びレーザアニール方法 |
TW102109159A TWI632611B (zh) | 2012-03-30 | 2013-03-15 | 雷射退火裝置及雷射退火方法 |
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Cited By (5)
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DE102014103749A1 (de) * | 2013-12-18 | 2015-06-18 | Rofin-Baasel Lasertech Gmbh & Co. Kg | Verfahren und Vorrichtung zur Bearbeitung eines Werkstücks |
KR20200010256A (ko) * | 2017-04-20 | 2020-01-30 | 실텍트라 게엠베하 | 정의된 방향의 수정 라인으로 웨이퍼를 생산하는 방법 |
WO2020158464A1 (ja) * | 2019-01-29 | 2020-08-06 | 株式会社ブイ・テクノロジー | レーザアニール方法およびレーザアニール装置 |
JP2020177968A (ja) * | 2019-04-16 | 2020-10-29 | 株式会社日本製鋼所 | レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法 |
EP4335581A1 (en) * | 2022-08-24 | 2024-03-13 | Rolls-Royce plc | System and method for finishing a surface of a workpiece |
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WO2017169336A1 (ja) * | 2016-03-30 | 2017-10-05 | 富士フイルム株式会社 | レーザ装置および光音響計測装置 |
CN109564857B (zh) * | 2016-09-06 | 2023-05-16 | 极光先进雷射株式会社 | 激光装置和激光退火装置 |
KR20210011903A (ko) | 2018-02-09 | 2021-02-02 | 이매진 싸이언티픽, 인크. | 단색 엑스선 영상 시스템 및 방법 |
KR102551147B1 (ko) * | 2018-04-18 | 2023-07-05 | 삼성디스플레이 주식회사 | 레이저 장치 |
WO2021020615A1 (ko) * | 2019-07-30 | 2021-02-04 | (주)에이치아이티오토모티브 | 열처리 장치 |
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JP2020520087A (ja) * | 2017-04-20 | 2020-07-02 | ジルテクトラ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 規定どおりに配向された改質線を有するウェハの製造方法 |
US11869810B2 (en) | 2017-04-20 | 2024-01-09 | Siltectra Gmbh | Method for reducing the thickness of solid-state layers provided with components |
KR102551442B1 (ko) * | 2017-04-20 | 2023-07-06 | 실텍트라 게엠베하 | 정의된 방향의 수정 라인으로 웨이퍼를 생산하는 방법 |
JP7250695B2 (ja) | 2017-04-20 | 2023-04-03 | ジルテクトラ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 規定どおりに配向された改質線を有するウェハの製造方法 |
JP7154592B2 (ja) | 2019-01-29 | 2022-10-18 | 株式会社ブイ・テクノロジー | レーザアニール方法およびレーザアニール装置 |
JP2020123600A (ja) * | 2019-01-29 | 2020-08-13 | 株式会社ブイ・テクノロジー | レーザアニール方法およびレーザアニール装置 |
WO2020158464A1 (ja) * | 2019-01-29 | 2020-08-06 | 株式会社ブイ・テクノロジー | レーザアニール方法およびレーザアニール装置 |
JP2020177968A (ja) * | 2019-04-16 | 2020-10-29 | 株式会社日本製鋼所 | レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法 |
JP7320975B2 (ja) | 2019-04-16 | 2023-08-04 | Jswアクティナシステム株式会社 | レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法 |
US11992896B2 (en) | 2019-04-16 | 2024-05-28 | Jsw Aktina System Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and semiconductor device manufacturing method |
EP4335581A1 (en) * | 2022-08-24 | 2024-03-13 | Rolls-Royce plc | System and method for finishing a surface of a workpiece |
Also Published As
Publication number | Publication date |
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JP6167358B2 (ja) | 2017-07-26 |
KR20140143812A (ko) | 2014-12-17 |
CN104272434B (zh) | 2017-12-22 |
TWI632611B (zh) | 2018-08-11 |
WO2013146197A1 (ja) | 2013-10-03 |
TW201351504A (zh) | 2013-12-16 |
CN104272434A (zh) | 2015-01-07 |
KR102054026B1 (ko) | 2019-12-09 |
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