JP2013171009A - Inertial force sensor - Google Patents
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5783—Mountings or housings not specific to any of the devices covered by groups G01C19/5607 - G01C19/5719
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
- G01C19/5733—Structural details or topology
- G01C19/574—Structural details or topology the devices having two sensing masses in anti-phase motion
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/097—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by vibratory elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
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Abstract
Description
本発明は、物理量を検出するセンサに係り、特に、加速度、角速度などの慣性力を静電容量変化により検出するセンサに関する。 The present invention relates to a sensor that detects a physical quantity, and more particularly, to a sensor that detects inertial force such as acceleration and angular velocity by a change in capacitance.
本技術分野の背景技術として、下記の特許文献１がある。この公報には、２枚のガラス基板の間にシリコン基板を挟んだ三層構造を有するセンサについて、検出電極を三次元配線によってシリコン基板の面外方向に形成する方法が開示されている。半導体部品と接続するための外部電極が形成された面とは反対の面に形成された検出電極からの信号を、シリコン基板に形成されたフィードスルーを介して外部電極に導くことを可能としている。 As a background art in this technical field, there is the following Patent Document 1. This publication discloses a method in which a detection electrode is formed in the out-of-plane direction of a silicon substrate with a three-dimensional wiring for a sensor having a three-layer structure in which a silicon substrate is sandwiched between two glass substrates. A signal from a detection electrode formed on a surface opposite to a surface on which an external electrode for connecting to a semiconductor component is formed can be guided to the external electrode through a feedthrough formed on a silicon substrate. .
しかしながら、上記構造の場合、検出電極とフィードスルー間の接触抵抗が大きくなることにより、感度が悪化するという課題が残されている。 However, in the case of the structure described above, there remains a problem that the sensitivity deteriorates due to an increase in contact resistance between the detection electrode and the feedthrough.
本発明の目的は、感度のよい慣性力センサを提供することにある。 An object of the present invention is to provide an inertial force sensor with high sensitivity.
上記課題を解決するために、本発明の慣性力センサは、慣性力検出のための第一の電極を備え、かつ、前記第一の電極で検出した信号を外部電極に引き出すための第一の固定部を備えた第一の基板と、前記第一の電極を覆うように形成された振動体を備え、かつ、振動体は梁により第二の固定部に架設されており、かつ、前記第二の固定部は前記第一の基板に固定されており、第一の電極で検出した信号を外部電極に伝達するための第三の固定部を備えた第二の基板と、において、前記第一の基板、前記第二の基板、との固定は全て接合であり、接合面を介して導通している構造である。 In order to solve the above-described problems, an inertial force sensor of the present invention includes a first electrode for inertial force detection, and a first electrode for extracting a signal detected by the first electrode to an external electrode. A first substrate provided with a fixing portion; and a vibrating body formed so as to cover the first electrode; and the vibrating body is installed on the second fixing portion by a beam, and A second fixing portion fixed to the first substrate, and a second substrate having a third fixing portion for transmitting a signal detected by the first electrode to an external electrode; The fixing to one substrate and the second substrate is all bonding, and is a structure in which conduction is made through the bonding surface.
本発明によれば、感度のよい慣性力センサを提供することが可能となる。 According to the present invention, it is possible to provide a highly sensitive inertial force sensor.
以下に、本発明の実施例について図面を用いて詳細に説明する。なお、以下の実施例では静電容量検出式加速度センサと静電容量検出式角速度センサを例にして説明するが、本発明は、これらのセンサにとらわれず広く慣性力センサ全般に適用可能である。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following embodiments, a capacitance detection type acceleration sensor and a capacitance detection type angular velocity sensor will be described as examples. However, the present invention is not limited to these sensors and can be widely applied to general inertial force sensors. .
図１と図２に示すように、本実施例における加速度センサは、第一の基板である下部電極基板５０、第二の基板であるセンサ基板６０、第三の基板である上部電極基板７０で構成される。下部電極基板５０は活性層２３を用い、第一の電極である下部電極２、活性層気密枠３、第一の固定部である下部電極用活性層固定部１７、下部電極用活性層配線１８、振動体変位可能エリア２２、上部電極用活性層固定部４、振動体用活性層固定部１６ａ，１６ｂからなる。センサ基板６０はセンサ層２４を用い、振動体５、第二の固定部であるセンサ層固定部１９ａ，１９ｂ、振動体支持梁２０ａ，２０ｂ、上部電極用センサ層固定部６、第三の固定部である下部電極用センサ層固定部７からなる。上部電極基板７０は、図２、図３に示されるように上活性層２５を用い、第二の電極である上部電極１１、上活性層気密枠１２、第四の固定部である上部電極用上活性層固定部１０、上部電極用上活性層配線３１、上振動体変位可能エリア３２、第五の固定部である下部電極用上活性層固定部９、振動体用上活性層固定部２８ａ，２８ｂからなる。 As shown in FIGS. 1 and 2, the acceleration sensor according to the present embodiment includes a lower electrode substrate 50 as a first substrate, a sensor substrate 60 as a second substrate, and an upper electrode substrate 70 as a third substrate. Composed. The lower electrode substrate 50 uses the active layer 23, the lower electrode 2 as the first electrode, the active layer hermetic frame 3, the lower electrode active layer fixing portion 17 as the first fixing portion, and the lower electrode active layer wiring 18. The movable body displaceable area 22, the upper electrode active layer fixing portion 4, and the vibrating body active layer fixing portions 16a and 16b. The sensor substrate 60 uses the sensor layer 24, and the vibrating body 5, sensor layer fixing portions 19 a and 19 b as second fixing portions, vibrating body support beams 20 a and 20 b, upper electrode sensor layer fixing portion 6, and third fixing. The lower electrode sensor layer fixing portion 7 is a portion. As shown in FIGS. 2 and 3, the upper electrode substrate 70 uses the upper active layer 25, and the upper electrode 11 as the second electrode, the upper active layer hermetic frame 12, and the upper electrode as the fourth fixing portion. Upper active layer fixing portion 10, upper electrode upper active layer wiring 31, upper vibrating body displaceable area 32, lower electrode upper active layer fixing portion 9 as a fifth fixing portion, upper vibrating body upper active layer fixing portion 28 a , 28b.
図１に示されるように、下部電極２形成には、下部電極２を備えた活性層２３と支持基板１の間に絶縁層３０を挟んだ状態である貼り合わせ基板を使用した。これにより、活性層２３と支持基板１は電気的に絶縁されている。下部電極２、上部電極用活性層固定部４、振動体用活性層固定部１６ａ，１６ｂ、活性層気密枠３は空間によって電気的に絶縁されており、隣り合う構造同士で混線はない。 As shown in FIG. 1, the lower electrode 2 was formed by using a bonded substrate in which an insulating layer 30 was sandwiched between the active layer 23 provided with the lower electrode 2 and the support substrate 1. Thereby, the active layer 23 and the support substrate 1 are electrically insulated. The lower electrode 2, the upper electrode active layer fixing portion 4, the vibrator active layer fixing portions 16 a and 16 b, and the active layer hermetic frame 3 are electrically insulated by a space, and there is no cross-talk between adjacent structures.
振動体用活性層固定部１６ａ，１６ｂは振動体５を固定するセンサ層固定部１９ａ，１９ｂと接続している。また、下部電極用活性層固定部１７は下部電極用センサ層固定部７と接続しており、上部電極用活性層固定部４は上部電極用センサ層固定部６と接続している。 The vibrating body active layer fixing portions 16 a and 16 b are connected to sensor layer fixing portions 19 a and 19 b for fixing the vibrating body 5. The lower electrode active layer fixing portion 17 is connected to the lower electrode sensor layer fixing portion 7, and the upper electrode active layer fixing portion 4 is connected to the upper electrode sensor layer fixing portion 6.
振動体５と振動体支持梁２０ａ，２０ｂは振動体変位可能エリア２２の上部に構成されており、下部電極２を備えた活性層２３から浮いた構造となっている。振動体変位可能エリア２２は掘り下げられており、振動体５と下部電極２の浮上距離はセンサ層２４と振動体変位可能エリア２２の上面との距離と一致する。振動体支持梁２０ａ，２０ｂは直梁ではなく、折り返し梁でも良い。 The vibrating body 5 and the vibrating body support beams 20 a and 20 b are formed on the upper part of the vibrating body displaceable area 22 and have a structure floating from the active layer 23 including the lower electrode 2. The vibrating body displaceable area 22 is dug down, and the flying distance between the vibrating body 5 and the lower electrode 2 coincides with the distance between the sensor layer 24 and the upper surface of the vibrating body displaceable area 22. The vibrating body support beams 20a and 20b may be folded beams instead of straight beams.
振動体５は振動体５の端部において２本の振動体支持梁２０ａ，２０ｂにより架設されており、面内方向であるｘ，ｙ方向と面外方向であるｚ方向にそれぞれ振動可能な状態で支持されている。振動体５は振動体支持梁２０ａ，２０ｂの端に延設されたセンサ層固定部１９ａ，１９ｂによって、振動体用活性層固定部１６ａ，１６ｂに固定されており、振動体支持梁２０ａ，２０ｂは、ばね機構の役割を持つ。 The vibrating body 5 is constructed by two vibrating body support beams 20a and 20b at the end of the vibrating body 5, and can vibrate in the in-plane x and y directions and the out-of-plane z direction. It is supported by. The vibrating body 5 is fixed to the vibrating body active layer fixing portions 16a and 16b by sensor layer fixing portions 19a and 19b extending at the ends of the vibrating body support beams 20a and 20b, and the vibrating body support beams 20a and 20b. Has the role of a spring mechanism.
例えば、振動体５が面外方向の加速度を受けた場合に、振動体５に発生する慣性力により、振動体５が変位するが、加速度印加終了とともに上記振動体支持梁２０ａ，２０ｂのばね力により元の位置に復元する。 For example, when the vibrating body 5 receives an acceleration in the out-of-plane direction, the vibrating body 5 is displaced by the inertial force generated in the vibrating body 5, but the spring force of the vibrating body support beams 20 a and 20 b is reached with the end of the acceleration application. To restore the original position.
振動体５には、下部電極２と対向する範囲において可動電極の機能を備えている。
なお、本実施例においては振動体５よりも下部電極２の方を大きな構造とした。また、図２に示されるように、振動体５、センサ層気密枠８、上部電極用センサ層固定部６、下部電極用センサ層固定部７は空間によって電気的に絶縁されており、隣り合う構造同士で混線はない。
The vibrating body 5 has a function of a movable electrode in a range facing the lower electrode 2.
In the present embodiment, the lower electrode 2 has a larger structure than the vibrating body 5. 2, the vibrator 5, the sensor layer hermetic frame 8, the upper electrode sensor layer fixing part 6, and the lower electrode sensor layer fixing part 7 are electrically insulated by a space and are adjacent to each other. There is no cross line between structures.
センサ層固定部１９ａ，１９ｂは振動体用上活性層固定部２８ａ，２８ｂ（図３参照。）と接続している。また、下部電極用センサ層固定部７は下部電極用上活性層固定部９と接続しており、上部電極用センサ層固定部６は上部電極用上活性層固定部１０と接続している。 The sensor layer fixing portions 19a and 19b are connected to the upper active layer fixing portions 28a and 28b (see FIG. 3) for the vibrator. The lower electrode sensor layer fixing part 7 is connected to the lower electrode upper active layer fixing part 9, and the upper electrode sensor layer fixing part 6 is connected to the upper electrode upper active layer fixing part 10.
接続している箇所が構成されている基板はそれぞれシリコン基板を用いており、同材料であるため線膨脹係数に差異がなく、温度変化に伴い発生する歪は小さい。接続には直接接合が用いられており、接合界面も上記固定部と同等の抵抗値であるため感度が低下することはない。 Since the silicon substrate is used for each of the substrates in which the connected portions are formed, since there is no difference in the linear expansion coefficient because of the same material, the strain generated with the temperature change is small. Direct connection is used for connection, and the bonding interface has a resistance value equivalent to that of the fixed portion, so the sensitivity does not decrease.
図２と図３に示すように上部電極１１は、上部電極１１を備えた上活性層２５と上支持基板１３の間に上絶縁層３４を挟んだ状態である貼り合わせ基板を使用した。これにより、上活性層２５と上支持基板１３は電気的に絶縁されている。上部電極１１、下部電極用上活性層固定部９、振動体用上活性層固定部２８ａ，２８ｂ、上活性層気密枠１２は空間によって電気的に絶縁されており、隣り合う構造同士で混線はない。上支持基板１３には下部電極用外部電極１４と上部電極用外部電極２７が形成されており、それぞれ絶縁膜３５によって電気的に絶縁している。また、上部電極用上活性層固定部１０は上部電極用外部電極２７と接続しており、下部電極用上活性層固定部９は下部電極用外部電極１４と接続している。下部電極用外部電極１４と上部電極用外部電極２７は基板に垂直に形成された孔に導電性材料が充填された構造となっており、上支持基板１３の表面で電極パッド１５に接続されている。電極パッド１５は全て同じ面に形成されている。このため、センサや集積回路のパッケージの一種であるＢＧＡ（Ball Grid Array）を用いることが容易であり、高密度実装に適している。 As shown in FIGS. 2 and 3, the upper electrode 11 was a bonded substrate in which the upper insulating layer 34 was sandwiched between the upper active layer 25 provided with the upper electrode 11 and the upper support substrate 13. Thereby, the upper active layer 25 and the upper support substrate 13 are electrically insulated. The upper electrode 11, the lower electrode upper active layer fixing portion 9, the vibrator upper active layer fixing portions 28 a and 28 b, and the upper active layer hermetic frame 12 are electrically insulated by a space, and crosstalk between adjacent structures is Absent. A lower electrode external electrode 14 and an upper electrode external electrode 27 are formed on the upper support substrate 13 and are electrically insulated by an insulating film 35. The upper electrode upper active layer fixing portion 10 is connected to the upper electrode external electrode 27, and the lower electrode upper active layer fixing portion 9 is connected to the lower electrode external electrode 14. The lower electrode external electrode 14 and the upper electrode external electrode 27 have a structure in which a conductive material is filled in a hole formed perpendicular to the substrate, and is connected to the electrode pad 15 on the surface of the upper support substrate 13. Yes. The electrode pads 15 are all formed on the same surface. For this reason, it is easy to use a BGA (Ball Grid Array) which is a kind of sensor or integrated circuit package, which is suitable for high-density mounting.
下部電極２と同様に上部電極１１も振動体５と対向するように構成されており、振動体５と異なるサイズで形成した。本実施例においては振動体５よりも上部電極１１の方を大きな構造とし、下部電極２と上部電極１１は同じ大きさとした。振動体５には、上部電極１１と対向する範囲において可動電極の機能を備えている。 Similar to the lower electrode 2, the upper electrode 11 is configured to face the vibrating body 5 and is formed in a size different from that of the vibrating body 5. In this embodiment, the upper electrode 11 has a larger structure than the vibrating body 5, and the lower electrode 2 and the upper electrode 11 have the same size. The vibrating body 5 has a function of a movable electrode in a range facing the upper electrode 11.
図２に示すように、下部電極２で検出した信号は下部電極用活性層配線１８（図１参照。）を通じて下部電極用活性層固定部１７まで到達する。この信号は下部電極用活性層固定部１７と下部電極用センサ層固定部７の接合界面を通じて下部電極用センサ層固定部７へ、下部電極用センサ層固定部７と下部電極用上活性層固定部９の接合界面を通じて下部電極用上活性層固定部９へ、下部電極用上活性層固定部９と導通している下部電極用外部電極１４まで減衰することなく検出できる。 As shown in FIG. 2, the signal detected by the lower electrode 2 reaches the lower electrode active layer fixing portion 17 through the lower electrode active layer wiring 18 (see FIG. 1). This signal is transmitted to the lower electrode sensor layer fixing portion 7 through the bonding interface between the lower electrode active layer fixing portion 17 and the lower electrode sensor layer fixing portion 7, and to the lower electrode sensor layer fixing portion 7 and the lower electrode upper active layer fixing. Detection can be performed without attenuation to the lower electrode upper active layer fixing portion 9 through the bonding interface of the portion 9 to the lower electrode outer electrode 14 in conduction with the lower electrode upper active layer fixing portion 9.
図１〜図３に示すように、センサは基板面外であるｚ方向の加速度を印加されると、振動体５と下部電極２と上部電極１１との間に形成される静電容量の変化に基づく加速度を検出することが可能である。また、振動体５が下部電極２に近づく方向に変位した場合、振動体５と下部電極２間の静電容量は増加する。その場合、振動体５は上部電極１１から遠ざかる方向に変位するので振動体５と上部電極１１間の静電容量は減少する。振動体変位可能エリア２２と振動体５、上振動体変位可能エリア３２と振動体５との間隔は一致する。そのため、下部電極２と上部電極１１の容量変化は同じ値であり、かつ、符号は逆である。このことを利用し、下部電極２と上部電極１１の容量変化を差動増幅することで感度を倍にすることが可能である。 As shown in FIGS. 1 to 3, when the sensor is applied with acceleration in the z direction outside the substrate surface, a change in capacitance formed between the vibrating body 5, the lower electrode 2, and the upper electrode 11. It is possible to detect acceleration based on. Further, when the vibrating body 5 is displaced in a direction approaching the lower electrode 2, the capacitance between the vibrating body 5 and the lower electrode 2 increases. In that case, since the vibrating body 5 is displaced in a direction away from the upper electrode 11, the capacitance between the vibrating body 5 and the upper electrode 11 decreases. The distance between the vibrating body displaceable area 22 and the vibrating body 5 and the upper vibrating body displaceable area 32 and the vibrating body 5 are the same. Therefore, the capacitance changes of the lower electrode 2 and the upper electrode 11 have the same value, and the signs are opposite. Utilizing this fact, the sensitivity can be doubled by differentially amplifying the capacitance change of the lower electrode 2 and the upper electrode 11.
なお、振動体変位可能エリア２２と上振動体変位可能エリア３２はウェットエッチングを用いて形成されており、振動体５とのギャップをナノメートルオーダーで制御することが可能となっている。これにより、センサ毎の感度ばらつきを抑制し、最適値に設定可能である。 The vibrating body displaceable area 22 and the upper vibrating body displaceable area 32 are formed by wet etching, and the gap with the vibrating body 5 can be controlled in nanometer order. Thereby, the sensitivity variation for every sensor can be suppressed and it can set to an optimal value.
また、振動体５の存在する内部空間は活性層気密枠３とセンサ層気密枠８と上活性層気密枠１２によって外部から隔離されている。これにより振動体５の周囲の環境は安定しており、外部からのごみや湿気起因の振動体５の固着や、ガス流入に伴う圧力変動起因の感度変動を抑制している。 The internal space in which the vibrating body 5 exists is isolated from the outside by the active layer hermetic frame 3, the sensor layer hermetic frame 8, and the upper active layer hermetic frame 12. As a result, the environment around the vibrating body 5 is stable, and sticking of the vibrating body 5 due to dust and moisture from the outside, and sensitivity fluctuation due to pressure fluctuation due to gas inflow are suppressed.
次に、図４を用いてに上記静電容量検出式加速度センサの製造工程を説明する。 Next, the manufacturing process of the capacitance detection type acceleration sensor will be described with reference to FIG.
工程（ａ）において、活性層２３と支持基板１の２枚の単結晶シリコン基板の間にシリコン酸化膜からなる絶縁層３０を挟んで接合したＳＯＩ（Silicon On Insulator）基板を用意した。ＳＯＩ基板の活性層２３は電極として使用可能な低抵抗のものを使用した。 In step (a), an SOI (Silicon On Insulator) substrate was prepared in which an active layer 23 and a single-crystal silicon substrate of the support substrate 1 were joined with an insulating layer 30 made of a silicon oxide film interposed therebetween. The active layer 23 of the SOI substrate is a low resistance material that can be used as an electrode.
工程（ｂ）において、活性層２３に振動体変位可能エリア２２を形成するためのウェットエッチング用のマスクとするため、熱酸化によりＳＯＩ基板全面に酸化膜を形成した。次に酸化膜をフォトリソグラフィと酸化膜エッチング技術を利用しパターニングすることにより、活性層２３にウェットエッチング用マスクを形成した。形成した酸化膜パターンをマスクとしてウェットエッチングを実施し、活性層２３に数ミクロンメートルの段差である振動体変位可能エリア２２を形成した。 In the step (b), an oxide film was formed on the entire surface of the SOI substrate by thermal oxidation in order to use as a wet etching mask for forming the vibrating body displaceable area 22 in the active layer 23. Then, a wet etching mask was formed on the active layer 23 by patterning the oxide film using photolithography and an oxide film etching technique. Wet etching was performed using the formed oxide film pattern as a mask, and a vibrator-displaceable area 22 having a step of several micrometers was formed in the active layer 23.
工程（ｃ）において、活性層２３の振動体変位可能エリア２２を含む全面においてフォトリソグラフィと酸化膜エッチング技術を利用しパターニングすることにより、活性層２３にドライエッチング用マスクを形成した。形成した酸化膜パターンとレジストパターンをマスクとしてシリコンのドライエッチングを実施し、活性層２３を絶縁層３０まで貫通させ、下部電極２と活性層気密枠３と上部電極用活性層固定部４と下部電極用活性層固定部１７を形成し、電気的に分離した。活性層２３表面の酸化膜を除去し、直接接合を可能とするようにシリコン面を露出させる。 In step (c), a dry etching mask was formed on the active layer 23 by patterning the entire surface of the active layer 23 including the vibrator-displaceable area 22 using photolithography and an oxide film etching technique. Using the formed oxide film pattern and resist pattern as a mask, dry etching of silicon is performed, the active layer 23 is penetrated to the insulating layer 30, the lower electrode 2, the active layer hermetic frame 3, the active layer fixing part 4 for the upper electrode, and the lower part An electrode active layer fixing portion 17 was formed and electrically separated. The oxide film on the surface of the active layer 23 is removed, and the silicon surface is exposed so that direct bonding is possible.
工程（ｄ）において、センサ層２４を形成するための単結晶シリコン基板を用意した。センサ層２４は電極として使用可能な低抵抗のものを使用した。センサ層２４と上記シリコン面を露出させた状態で貼り合わせ、直接接合により強固に接合した。活性層２３とセンサ層２４を接合する前に接合面は十分な洗浄とプラズマを用いた表面活性化、かつ、接合媒体である水酸基がついた状態を確保する。 In the step (d), a single crystal silicon substrate for forming the sensor layer 24 was prepared. The sensor layer 24 is a low resistance material that can be used as an electrode. The sensor layer 24 was bonded to the silicon surface in an exposed state, and was firmly bonded by direct bonding. Before the active layer 23 and the sensor layer 24 are bonded, the bonding surface is sufficiently cleaned, surface-activated using plasma, and secured with a hydroxyl group as a bonding medium.
工程（ｅ）において、センサ層２４においてフォトリソグラフィを利用し、センサ層２４にドライエッチング用マスクを形成した。形成したレジストパターンをマスクとしてシリコンのドライエッチングを実施し、活性層２３まで貫通させ、振動体５と上部電極用センサ層固定部６と下部電極用センサ層固定部７とセンサ層気密枠８を形成し、電気的に分離した。 In the step (e), a photolithography was used for the sensor layer 24 to form a dry etching mask on the sensor layer 24. Using the formed resist pattern as a mask, dry etching of silicon is performed to penetrate to the active layer 23, and the vibrator 5, the upper electrode sensor layer fixing portion 6, the lower electrode sensor layer fixing portion 7, and the sensor layer hermetic frame 8 are formed. Formed and electrically separated.
工程（ｆ）〜（ｈ）において、下部電極用外部電極１４と上部電極用外部電極２７が形成されたＳＯＩ基板に、上記下部電極２と上記振動体変位可能エリア２２の形成工程と同様の工程で上部電極１１と上振動体変位可能エリア３２を形成した。上活性層２５の上振動体変位可能エリア３２を含む全面においてフォトリソグラフィと酸化膜エッチング技術を利用しパターニングすることにより、上活性層２５にドライエッチング用マスクを形成した。形成した酸化膜パターンとレジストパターンをマスクとしてシリコンのドライエッチングを実施し、上活性層２３を上絶縁層３４まで貫通させ、上部電極１１と上活性層気密枠１２と上部電極用上活性層固定部１０と下部電極用上活性層固定部９を形成し、電気的に分離した。上活性層２５の表面は酸化膜が除去されており、直接接合を可能とするようにシリコン面が露出している。 In the steps (f) to (h), the same step as the step of forming the lower electrode 2 and the vibrating body displaceable area 22 on the SOI substrate on which the lower electrode external electrode 14 and the upper electrode external electrode 27 are formed. Thus, the upper electrode 11 and the upper vibrating body displaceable area 32 were formed. A dry etching mask was formed on the upper active layer 25 by patterning the entire surface including the upper vibrating body displaceable area 32 of the upper active layer 25 using photolithography and an oxide film etching technique. Using the formed oxide film pattern and resist pattern as a mask, dry etching of silicon is performed, and the upper active layer 23 is penetrated to the upper insulating layer 34 to fix the upper electrode 11, the upper active layer hermetic frame 12, and the upper active layer for the upper electrode. The portion 10 and the lower electrode upper active layer fixing portion 9 were formed and electrically separated. The oxide film is removed from the surface of the upper active layer 25, and the silicon surface is exposed so as to enable direct bonding.
工程（ｉ）において、振動体５が形成されたセンサ層２４と接合用にシリコン面を露出させた上活性層を貼り合わせ、直接接合により強固に接合した。上活性層２５とセンサ層２４を接合する前に接合面は十分な洗浄とプラズマを用いた表面活性化、かつ、接合媒体である水酸基がついた状態を確保する。上支持基板１３上にスパッタを用いて電極パッド用金属膜を成膜する。フォトリソグラフィを利用し下部電極用外部電極１４と上部電極用外部電極２７に接続するように電極パッド１５を形成する。 In step (i), the sensor layer 24 on which the vibrating body 5 was formed and the upper active layer with the silicon surface exposed for bonding were bonded together and bonded firmly by direct bonding. Before the upper active layer 25 and the sensor layer 24 are bonded, the bonding surface is sufficiently cleaned, surface-activated using plasma, and secured with a hydroxyl group as a bonding medium. A metal film for electrode pads is formed on the upper support substrate 13 by sputtering. An electrode pad 15 is formed so as to be connected to the lower electrode external electrode 14 and the upper electrode external electrode 27 using photolithography.
実施例１の加速度センサにおいて、上述した構成、すなわち、シリコン基板と検出電極の接触ではなく検出電極に延設された固定部の両基板に直接接合を用いて強固に接合し、接合界面を導通させることにより、接触抵抗変化が少なく長期間での感度やゼロ点出力の低下を防止する。また、検出電極にもシリコン基板を用いることで温度変化に伴う線膨脹係数差を起因とした歪を防ぎ、誤差の少ない高精度検出を可能とする。 In the acceleration sensor according to the first embodiment, the above-described configuration, that is, the silicon substrate and the detection electrode are not in contact with each other, but is firmly bonded to both substrates of the fixed portion extending to the detection electrode by using direct bonding, and the bonding interface is conducted. By doing so, the contact resistance change is small and the long-term sensitivity and the zero point output are prevented from being lowered. In addition, by using a silicon substrate as the detection electrode, it is possible to prevent distortion caused by a difference in linear expansion coefficient due to a temperature change, and to perform highly accurate detection with few errors.
また、下部電極２と上部電極１１は振動体５と異なるサイズで形成した。これにより、可動部が面内方向であるｘ，ｙ方向に振動した際に、振動体５が下部電極２と上部電極１１の上を外れるように動作すると、下部電極２と振動体５や上部電極１１と振動体５の間の感度が低下し、見掛け上ｚ方向に変位したように計測されるのを防止する効果を有する。 Further, the lower electrode 2 and the upper electrode 11 were formed in a size different from that of the vibrating body 5. As a result, when the movable body vibrates in the x and y directions, which are in-plane directions, and the vibrating body 5 operates so as to be off the lower electrode 2 and the upper electrode 11, the lower electrode 2 and the vibrating body 5 The sensitivity between the electrode 11 and the vibrating body 5 is lowered, and it has the effect of preventing measurement that appears to be displaced in the z direction.
図５は、実施例２の加速度センサの断面図である。
既に説明した図１〜図４に示された同一の符号を付された構成と、同一の機能を有する部分については、説明を省略する。
FIG. 5 is a cross-sectional view of the acceleration sensor according to the second embodiment.
The description of the components having the same functions as those shown in FIGS. 1 to 4 already described with reference to FIGS.
本実施例における加速度センサにおいては、下部電極用外部電極１４と上部電極用外部電極２７は基板の垂直方向に形成されたテーパのついた孔に導電性材料が成膜された構造となっており、電極パッド１５と同材料で形成される。それぞれの外部電極は上支持基板１３の表面で電極パッド１５に接続されている。また、電極パッド１５は全て同じ面に形成されている。このため、センサや集積回路のパッケージの一種であるＢＧＡ（Ball Grid Array）を用いることが容易であり、高密度実装に適している。 In the acceleration sensor according to this embodiment, the lower electrode external electrode 14 and the upper electrode external electrode 27 have a structure in which a conductive material is formed in a tapered hole formed in the vertical direction of the substrate. The electrode pad 15 is made of the same material. Each external electrode is connected to the electrode pad 15 on the surface of the upper support substrate 13. The electrode pads 15 are all formed on the same surface. For this reason, it is easy to use a BGA (Ball Grid Array) which is a kind of sensor or integrated circuit package, which is suitable for high-density mounting.
実施例２において、実施例１の効果と共に以下の効果も有する。
テーパのついた孔は、ウェットエッチングやブラスト加工などの比較的安価な加工が可能であり、導電性材料の埋め込みよりも低コストでの製作を可能とする。また、テーパに配線を成膜することにより断線の危険性を抑制する効果を有する。
The second embodiment has the following effects in addition to the effects of the first embodiment.
The tapered hole can be processed at a relatively low cost such as wet etching or blasting, and can be manufactured at a lower cost than embedding a conductive material. Moreover, it has the effect of suppressing the risk of disconnection by forming the wiring on the taper.
図６は、実施例３の加速度センサの断面図である。
既に説明した図１〜図５に示された同一の符号を付された構成と、同一の機能を有する部分については、説明を省略する。
FIG. 6 is a cross-sectional view of the acceleration sensor according to the third embodiment.
The description of the components having the same functions as those shown in FIG. 1 to FIG.
本実施例における加速度センサにおいては、センサ層固定部１９ａ，１９ｂは振動体用上活性層固定部２８ａ，２８ｂと接続している。また、下部電極用センサ層固定部７は接合界面に形成された導電性接合材料３３を通じて下部電極用上活性層固定部９と接続しており、上部電極用センサ層固定部６は上部電極用上活性層固定部１０と接続している。接続している箇所が構成されている基板はそれぞれシリコン基板を用いており、同材料であるため線膨脹係数に差異がなく、温度変化に伴い発生する歪は小さい。接続には導電性材料を挟み込んだ共晶結合を利用しており、接合界面も固定部と同程度の抵抗値であるため感度が低下することはない。共晶反応としてＡｕ−Ｓｉ、Ａｕ−Ｓｎ、Ａｕ−Ｇｅ、Ａｕ−Ｉｎ、Ａｌ−Ｇｅ、Ｃｕ−Ｓｎを利用する。 In the acceleration sensor according to this embodiment, the sensor layer fixing portions 19a and 19b are connected to the upper active layer fixing portions 28a and 28b for the vibrator. The lower electrode sensor layer fixing portion 7 is connected to the lower electrode upper active layer fixing portion 9 through the conductive bonding material 33 formed at the bonding interface, and the upper electrode sensor layer fixing portion 6 is connected to the upper electrode. The upper active layer fixing part 10 is connected. Since the silicon substrate is used for each of the substrates in which the connected portions are formed, since there is no difference in the linear expansion coefficient because of the same material, the strain generated with the temperature change is small. For the connection, a eutectic bond sandwiching a conductive material is used, and the joint interface has the same resistance value as that of the fixed portion, so the sensitivity does not decrease. Au-Si, Au-Sn, Au-Ge, Au-In, Al-Ge, Cu-Sn is used as the eutectic reaction.
実施例３において、実施例１の効果と共に以下の効果も有する。
共晶接合を利用することで、センサ基板６０の上部の平滑性が加工によりある程度悪化しても接合することを可能とする。また、直接接合する際に必要な接合媒体である水酸基を振動体５に付着させる工程が必要なく、湿気により振動体５が下部電極２に固着してしまうのを抑制する効果を有する。
The third embodiment has the following effects in addition to the effects of the first embodiment.
By using eutectic bonding, bonding is possible even if the smoothness of the upper part of the sensor substrate 60 deteriorates to some extent by processing. Further, there is no need to attach a hydroxyl group, which is a bonding medium necessary for direct bonding, to the vibrating body 5, and it has an effect of suppressing the vibrating body 5 from adhering to the lower electrode 2 due to moisture.
図７は、実施例５の角速度センサの鳥瞰図であり、各基板で分解した分解図である。図８は、角速度センサの断面図であり、図９は角速度センサの上部電極接合側の平面図である。 FIG. 7 is a bird's-eye view of the angular velocity sensor according to the fifth embodiment, which is an exploded view of each substrate. FIG. 8 is a cross-sectional view of the angular velocity sensor, and FIG. 9 is a plan view of the angular velocity sensor on the upper electrode bonding side.
図７と図８に示すように、本実施例における角速度センサは、第一の基板である下部電極基板１５０、第二の基板であるセンサ基板１６０、第三の基板である上部電極基板１７０で構成される。下部電極基板１５０は活性層１２３を用い、第一の電極である下部電極１０２ａ，１０２ｂ、活性層気密枠１０３、第一の固定部である下部電極用活性層固定部１１７ａ，１１７ｂ、下部電極用活性層配線１１８ａ，１１８ｂ、振動体変位可能エリア１２２、上部電極用活性層固定部１０４ａ，１０４ｂ、振動体用活性層固定部１１６ａ〜１１６ｄからなる。センサ基板はセンサ層１２４を用い、振動体１０５ａ，１０５ｂ、第二の固定部であるセンサ層固定部１１９ａ〜１１９ｄ、振動体支持梁１２０ａ〜１２０ｄ、上部電極用センサ層固定部１０６ａ，１０６ｂ、第三の固定部である下部電極用センサ層固定部１０７ａ，１０７ｂ、リンク梁１３５からなる。上部電極基板は上活性層１２５を用い、上部電極１１１ａ，１１１ｂ、上活性層気密枠１１２、第四の固定部である上部電極用上活性層固定部１１０ａ，１１０ｂ、上部電極用上活性層配線１３１ａ，１３１ｂ、上振動体変位可能エリア１３２、第五の固定部である下部電極用上活性層固定部１０９ａ，１０９ｂ、振動体用上活性層固定部１２８ａ〜１２８ｄからなる。 As shown in FIGS. 7 and 8, the angular velocity sensor in this embodiment includes a lower electrode substrate 150 that is a first substrate, a sensor substrate 160 that is a second substrate, and an upper electrode substrate 170 that is a third substrate. Composed. The lower electrode substrate 150 uses the active layer 123, the lower electrodes 102a and 102b as the first electrodes, the active layer hermetic frame 103, the lower electrode active layer fixing portions 117a and 117b as the first fixing portions, and the lower electrode The active layer wirings 118a and 118b, the vibrating body displaceable area 122, the upper electrode active layer fixing portions 104a and 104b, and the vibrating body active layer fixing portions 116a to 116d. The sensor substrate uses a sensor layer 124, and vibrating bodies 105a and 105b, second fixing portions, sensor layer fixing portions 119a to 119d, vibrating body supporting beams 120a to 120d, upper electrode sensor layer fixing portions 106a and 106b, It consists of lower electrode sensor layer fixing portions 107a and 107b and link beams 135, which are three fixing portions. The upper electrode substrate uses the upper active layer 125, the upper electrodes 111a and 111b, the upper active layer hermetic frame 112, the upper electrode upper active layer fixing portions 110a and 110b, which are the fourth fixing portions, and the upper electrode upper active layer wiring. 131a, 131b, upper vibrating body displaceable area 132, lower electrode upper active layer fixing portions 109a, 109b as fifth fixing portions, and vibrating body upper active layer fixing portions 128a to 128d.
下部電極１０２ａ，１０２ｂは、下部電極１０２ａ，１０２ｂを備えた活性層１２３と支持基板１０１の間に絶縁層１３０を挟んだ状態である貼り合わせ基板を使用した。これにより、活性層１２３と支持基板１０１は電気的に絶縁されている。下部電極１０２ａ，１０２ｂ、上部電極用活性層固定部１０４ａ，１０４ｂ、振動体用活性層固定部１１６ａ〜１１６ｄ、活性層気密枠１０３は空間によって電気的に絶縁されており、隣り合う構造同士で混線はない。 As the lower electrodes 102a and 102b, a bonded substrate in which the insulating layer 130 is sandwiched between the active layer 123 including the lower electrodes 102a and 102b and the support substrate 101 was used. Thereby, the active layer 123 and the support substrate 101 are electrically insulated. The lower electrodes 102a and 102b, the upper electrode active layer fixing portions 104a and 104b, the vibrator active layer fixing portions 116a to 116d, and the active layer hermetic frame 103 are electrically insulated by a space, and are mixed between adjacent structures. There is no.
振動体用活性層固定部１１６ａ〜１１６ｄは振動体１０５ａ，１０５ｂを固定するセンサ層固定部１１９ａ〜１１９ｄと接続している。また、下部電極用活性層固定部１１７ａ，１１７ｂは下部電極用センサ層固定部１０７ａ，１０７ｂと接続しており、上部電極用活性層固定部１０４ａ，１０４ｂは上部電極用センサ層固定部１０６ａ，１０６ｂと接続している。接続している箇所が構成されている基板はそれぞれシリコン基板を用いており、同材料であるため線膨脹係数に差異がなく、温度変化に伴い発生する歪は小さい。接続には直接接合が用いられており、接合界面も上記固定部と同等の抵抗値であるため感度が低下することはない。 The vibrating body active layer fixing portions 116a to 116d are connected to sensor layer fixing portions 119a to 119d for fixing the vibrating bodies 105a and 105b. The lower electrode active layer fixing portions 117a and 117b are connected to the lower electrode sensor layer fixing portions 107a and 107b, and the upper electrode active layer fixing portions 104a and 104b are connected to the upper electrode sensor layer fixing portions 106a and 106b. Connected. Since the silicon substrate is used for each of the substrates in which the connected portions are formed, since there is no difference in the linear expansion coefficient because of the same material, the strain generated with the temperature change is small. Direct connection is used for connection, and the bonding interface has a resistance value equivalent to that of the fixed portion, so the sensitivity does not decrease.
振動体１０５ａ，１０５ｂと振動体支持梁１２０ａ〜１２０ｄは振動体変位可能エリア１２２の上部に構成されており、下部電極１０２ａ，１０２ｂを備えた活性層１２３から浮いた構造となっている。振動体変位可能エリア１２２は掘り下げられており、振動体１０５と下部電極１０２の浮上距離はセンサ層１２４と振動体変位可能エリア１２２の上面との距離と一致する。振動体支持梁１２０ａ，１２０ｂは直梁ではなく、折り返し梁でも良い。振動体１０５ａ，１０５ｂは振動体１０５ａ，１０５ｂの端部において２本の振動体支持梁１２０ａ，１２０ｂにより架設されており、面内方向であるｘ，ｙ方向と面外方向であるｚ方向にそれぞれ振動可能な状態で支持されている。振動体１０５は振動体支持梁１２０ａ〜１２０ｄの端に延設されたセンサ層固定部１１９ａ〜１１９ｄによって、振動体用活性層固定部１１６ａ〜１１６ｄに固定されており、振動体支持梁１２０ａ〜１２０ｄは、ばね機構の役割を持つ。例えば、振動体１０５ａ，１０５ｂが面外方向の加速度や角速度を受けた場合に、振動体１０５ａ，１０５ｂに発生する慣性力により、振動体１０５ａ，１０５ｂが変位するが、加速度や角速度印加終了とともに上記振動体支持梁１２０ａ〜１２０ｄのばね力により元の位置に復元する。振動体支持梁１２０ａ〜１２０ｄは振動体１０５ａ，１０５ｂと連動して振動する。また、二つの振動体１０５ａ，１０５ｂは互いにリンク梁１３５により連結されている。振動体１０５ａ，１０５ｂ間では、リンク梁１３５を通じ、双方の振動エネルギーの授受が行われる。 The vibrating bodies 105a and 105b and the vibrating body support beams 120a to 120d are formed in the upper part of the vibrating body displaceable area 122 and have a structure floating from the active layer 123 including the lower electrodes 102a and 102b. The vibrating body displaceable area 122 is dug down, and the flying distance between the vibrating body 105 and the lower electrode 102 matches the distance between the sensor layer 124 and the upper surface of the vibrating body displaceable area 122. The vibrating body support beams 120a and 120b may be folded beams instead of straight beams. The vibrating bodies 105a and 105b are installed at the ends of the vibrating bodies 105a and 105b by two vibrating body support beams 120a and 120b, respectively, in the x and y directions which are in-plane directions and the z direction which is an out-of-plane direction. It is supported so that it can vibrate. The vibrating body 105 is fixed to the vibrating body active layer fixing portions 116a to 116d by sensor layer fixing portions 119a to 119d extending at the ends of the vibrating body support beams 120a to 120d, and the vibrating body support beams 120a to 120d. Has the role of a spring mechanism. For example, when the vibrating bodies 105a and 105b receive out-of-plane acceleration and angular velocity, the vibrating bodies 105a and 105b are displaced by the inertial force generated in the vibrating bodies 105a and 105b. The original position is restored by the spring force of the vibrating body support beams 120a to 120d. The vibrating body support beams 120a to 120d vibrate in conjunction with the vibrating bodies 105a and 105b. The two vibrating bodies 105 a and 105 b are connected to each other by a link beam 135. Between the vibrating bodies 105a and 105b, the vibration energy of both is exchanged through the link beam 135.
振動体１０５ａ，１０５ｂには、下部電極１０２ａ，１０２ｂと対向する範囲において可動電極の機能を備えている。下部電極１０２ａ，１０２ｂは振動体１０５ａ，１０５ｂと異なるサイズで形成した。これは可動部が面内方向であるｘ，ｙ方向に振動した際に、振動体１０５ａ，１０５ｂが下部電極２の上部を外れるように動作すると、下部電極１０２ａ，１０２ｂと振動体１０５ａ，１０５ｂとの感度が低下し、見掛け上ｚ方向に変位したように計測されるのを防止するためである。本実施例においては振動体５よりも下部電極１０２ａ，１０２ｂの方を大きな構造とした。振動体１０５ａ，１０５ｂ、センサ層気密枠１０８、上部電極用センサ層固定部１０６ａ，１０６ｂ、下部電極用センサ層固定部１０７ａ，１０７ｂは空間によって電気的に絶縁されており、隣り合う構造同士で混線はない。 The vibrating bodies 105a and 105b have a function of a movable electrode in a range facing the lower electrodes 102a and 102b. The lower electrodes 102a and 102b were formed in a size different from that of the vibrating bodies 105a and 105b. This is because, when the movable body vibrates in the x and y directions, which are in-plane directions, if the vibrating bodies 105a and 105b operate so as to deviate from the upper part of the lower electrode 2, the lower electrodes 102a and 102b and the vibrating bodies 105a and 105b This is for the purpose of preventing the measurement from appearing as if the sensitivity is reduced and apparently displaced in the z direction. In the present embodiment, the lower electrodes 102 a and 102 b have a larger structure than the vibrating body 5. The vibrating bodies 105a and 105b, the sensor layer hermetic frame 108, the upper electrode sensor layer fixing portions 106a and 106b, and the lower electrode sensor layer fixing portions 107a and 107b are electrically insulated by a space, and are mixed between adjacent structures. There is no.
センサ層固定部１１９ａ〜１１９ｄは振動体用上活性層固定部１２８ａ〜１２８ｄと接続している。また、下部電極用センサ層固定部１０７ａ，１０７ｂは下部電極用上活性層固定部１０９ａ，１０９ｂと接続しており、上部電極用センサ層固定部６は上部電極用上活性層固定部１１０ａ，１１０ｂと接続している。接続している箇所が構成されている基板はそれぞれシリコン基板を用いており、同材料であるため線膨脹係数に差異がなく、温度変化に伴い発生する歪は小さい。接続には直接接合が用いられており、接合界面も上記固定部と同等の抵抗値であるため感度が低下することはない。 The sensor layer fixing portions 119a to 119d are connected to the upper active layer fixing portions 128a to 128d for the vibrator. The lower electrode sensor layer fixing portions 107a and 107b are connected to the lower electrode upper active layer fixing portions 109a and 109b, and the upper electrode sensor layer fixing portion 6 is connected to the upper electrode upper active layer fixing portions 110a and 110b. Connected. Since the silicon substrate is used for each of the substrates in which the connected portions are formed, since there is no difference in the linear expansion coefficient because of the same material, the strain generated with the temperature change is small. Direct connection is used for connection, and the bonding interface has a resistance value equivalent to that of the fixed portion, so the sensitivity does not decrease.
図８と図９に示すように上部電極１１１ａ，１１１ｂは、上部電極１１１ａ，１１１ｂを備えた上活性層１２５と上支持基板１１３の間に上絶縁層１３４を挟んだ状態である貼り合わせ基板を使用した。これにより、上活性層１２５と上支持基板１１３は電気的に絶縁されている。上部電極１１１ａ，１１１ｂ、下部電極用上活性層固定部１０９ａ，１０９ｂ、振動体用上活性層固定部１２８ａ〜１２８ｄ、上活性層気密枠１１２は空間によって電気的に絶縁されており、隣り合う構造同士で混線はない。上支持基板１１３には下部電極用外部電極１１４ａ，１１４ｂと上部電極用外部電極１２７ａ，１２７ｂが形成されており、それぞれ絶縁膜３５によって電気的に絶縁している。振動体用上活性層固定部１２８ａ〜１２８ｄと接続している。また、上部電極用上活性層固定部１１０ａ，１１０ｂは上部電極用外部電極１２７ａ，１２７ｂと接続しており、下部電極用上活性層固定部１０９ａ，１０９ｂは下部電極用外部電極１１４ａ，１１４ｂと接続している。下部電極用外部電極１１４ａ，１１４ｂと上部電極用外部電極１２７ａ，１２７ｂは基板に垂直に形成された孔に導電性材料が充填された構造となっており、上支持基板１１３の表面で電極パッド１１５に接続されている。電極パッド１１５は全て同じ面に形成されている。このため、センサや集積回路のパッケージの一種であるＢＧＡ（Ball Grid Array）を用いることが容易であり、高密度実装に適している。 As shown in FIGS. 8 and 9, the upper electrodes 111a and 111b are made of a bonded substrate in which the upper insulating layer 134 is sandwiched between the upper active layer 125 including the upper electrodes 111a and 111b and the upper support substrate 113. used. Thereby, the upper active layer 125 and the upper support substrate 113 are electrically insulated. The upper electrodes 111a and 111b, the upper active layer fixing portions 109a and 109b for the lower electrode, the upper active layer fixing portions 128a to 128d for the vibrator, and the upper active layer hermetic frame 112 are electrically insulated by a space and are adjacent to each other. There is no cross-talk between each other. Lower electrode external electrodes 114 a and 114 b and upper electrode external electrodes 127 a and 127 b are formed on the upper support substrate 113, and are electrically insulated by an insulating film 35. It connects with the upper active layer fixing | fixed part 128a-128d for vibrating bodies. The upper electrode upper active layer fixing portions 110a and 110b are connected to the upper electrode external electrodes 127a and 127b, and the lower electrode upper active layer fixing portions 109a and 109b are connected to the lower electrode external electrodes 114a and 114b. doing. The lower electrode external electrodes 114 a and 114 b and the upper electrode external electrodes 127 a and 127 b have a structure in which a conductive material is filled in a hole formed perpendicular to the substrate, and the electrode pad 115 is formed on the surface of the upper support substrate 113. It is connected to the. The electrode pads 115 are all formed on the same surface. For this reason, it is easy to use a BGA (Ball Grid Array) which is a kind of sensor or integrated circuit package, which is suitable for high-density mounting.
下部電極１０２ａ，１０２ｂと同様に上部電極１１１ａ，１１１ｂも振動体１０５ａ，１０５ｂと対向するように構成されており、振動体１０５ａ，１０５ｂと異なるサイズで形成した。これは下部電極１０２ａ，１０２ｂと同様に可動部が面内方向であるｘ，ｙ方向に振動した際に、振動体１０５ａ，１０５ｂが上部電極１１１ａ，１１１ｂの上部を外れるように動作すると、上部電極１１１ａ，１１１ｂとの静電容量が低下し、見掛け上ｚ方向に変位したように計測されるのを防止するためである。本実施例においては振動体１０５よりも上部電極１１１の方を大きな構造とし、下部電極１０２と上部電極１１１は同じ大きさとした。振動体１０５ａ，１０５ｂには、上部電極１１１ａ，１１１ｂと対向する範囲において可動電極の機能を備えている。 Similar to the lower electrodes 102a and 102b, the upper electrodes 111a and 111b are also configured to face the vibrating bodies 105a and 105b, and are formed in a size different from that of the vibrating bodies 105a and 105b. As with the lower electrodes 102a and 102b, when the movable body vibrates in the x and y directions which are in-plane directions, the upper electrodes 111a and 111b operate so that the vibrating bodies 105a and 105b move off the upper portions of the upper electrodes 111a and 111b. This is to prevent the capacitance with 111a and 111b from being lowered and measured to appear to be displaced in the z direction. In this embodiment, the upper electrode 111 has a larger structure than the vibrating body 105, and the lower electrode 102 and the upper electrode 111 have the same size. The vibrating bodies 105a and 105b have a function of a movable electrode in a range facing the upper electrodes 111a and 111b.
図８に示すように、下部電極１０２ａ，１０２ｂで検出した信号は下部電極用活性層配線１１８ａ，１１８ｂを通じて下部電極用活性層固定部１１７ａ，１１７ｂまで到達する。この信号は下部電極用活性層固定部１１７ａ，１１７ｂと下部電極用センサ層固定部１０７の接合界面を通じて下部電極用センサ層固定部１０７へ、下部電極用センサ層固定部１０７ａ，１０７ｂと下部電極用上活性層固定部１０９ａ，１０９ｂの接合界面を通じて下部電極用上活性層固定部１０９ａ，１０９ｂへ、下部電極用上活性層固定部１０９ａ，１０９ｂと導通している下部電極用外部電極１１４ａ，１１４ｂまで信号を減衰させることなく検出できる。 As shown in FIG. 8, signals detected by the lower electrodes 102a and 102b reach the lower electrode active layer fixing portions 117a and 117b through the lower electrode active layer wirings 118a and 118b. This signal is transmitted to the lower electrode sensor layer fixing portion 107 through the bonding interface between the lower electrode active layer fixing portions 117a and 117b and the lower electrode sensor layer fixing portion 107, and to the lower electrode sensor layer fixing portions 107a and 107b and the lower electrode. Through the bonding interface between the upper active layer fixing portions 109a and 109b, to the lower electrode upper active layer fixing portions 109a and 109b, the lower electrode external electrodes 114a and 114b that are electrically connected to the lower electrode upper active layer fixing portions 109a and 109b. The signal can be detected without being attenuated.
図７〜図９に示すように、振動体１０５ａ，１０５ｂと下部電極１０２ａ，１０２ｂと上部電極１１１ａ，１１１ｂとの間に形成される静電容量の変化に基づく角速度を検出することが可能である。センサは基板面外であるｘ軸周りの角速度を印加されると、二つの振動体１０５ａ，１０５ｂはリンク梁１３５を通じて振動エネルギーの授受をしながら、コリオリ力により面外であるｚ軸方向に互いに逆方向に変位する。振動体１０５ａが下部電極１０２ａに近づく方向に変位した場合、振動体１０５ａと下部電極１０２ａ間の静電容量は増加する。その場合、振動体１０５ａは上部電極１１１ａから遠ざかる方向に変位するので振動体１０５ａと上部電極１１１ａ間の静電容量は減少する。同時に振動体１０５ａとリンク梁１３５で架設された振動体１０５ｂはコリオリ力により下部電極１０２ｂから遠ざかる方向に変位するので振動体１０５ｂと上部電極１１１ｂ間の静電容量は減少する。振動体変位可能エリア１２２と振動体１０５ａ，１０５ｂ、上振動体変位可能エリア１３２と振動体１０５ａ，１０５ｂとの間隔は一致する。そのため、下部電極１０２ａと上部電極１１１ｂの容量変化が同じ値で増加した時、下部電極１０２ｂと上部電極１１１ａの容量変化も同じ値で減少する。このことを利用し、下部電極１０２ａ，１０２ｂと上部電極１１１ａ，１１１ｂの容量変化を差動増幅することで感度を増幅することが可能である。また、加速度が印加された場合は、下部電極１０２ａと下部電極１０２ｂの容量変化が同じ値で増加した時、上部電極１１１ａと上部電極１１１ｂとの容量変化も同じ値で減少する。これにより、加速度と角速度を切り分けることが可能である。 As shown in FIGS. 7 to 9, it is possible to detect an angular velocity based on a change in capacitance formed between the vibrating bodies 105a and 105b, the lower electrodes 102a and 102b, and the upper electrodes 111a and 111b. . When an angular velocity around the x-axis that is out of the substrate surface is applied to the sensor, the two vibrating bodies 105a and 105b transmit and receive vibration energy through the link beam 135, and in the z-axis direction that is out of plane by the Coriolis force. Displaces in the opposite direction. When the vibrating body 105a is displaced in a direction approaching the lower electrode 102a, the capacitance between the vibrating body 105a and the lower electrode 102a increases. In that case, since the vibrating body 105a is displaced away from the upper electrode 111a, the capacitance between the vibrating body 105a and the upper electrode 111a decreases. At the same time, the vibrating body 105b and the vibrating body 105b constructed by the link beam 135 are displaced in a direction away from the lower electrode 102b by the Coriolis force, so that the capacitance between the vibrating body 105b and the upper electrode 111b decreases. The intervals between the vibrating body displaceable area 122 and the vibrating bodies 105a and 105b, and the upper vibrating body displaceable area 132 and the vibrating bodies 105a and 105b are the same. Therefore, when the capacitance changes of the lower electrode 102a and the upper electrode 111b increase with the same value, the capacitance changes of the lower electrode 102b and the upper electrode 111a also decrease with the same value. Utilizing this fact, it is possible to amplify the sensitivity by differentially amplifying the capacitance changes of the lower electrodes 102a and 102b and the upper electrodes 111a and 111b. When acceleration is applied, when the capacitance change of the lower electrode 102a and the lower electrode 102b increases with the same value, the capacitance change of the upper electrode 111a and the upper electrode 111b also decreases with the same value. Thereby, acceleration and angular velocity can be separated.
なお、振動体変位可能エリア１２２と上振動体変位可能エリア１３２はウェットエッチングを用いて形成されており、振動体１０５ａ，１０５ｂとのギャップをナノメートルオーダーで制御することが可能となっている。これにより、センサ毎の感度ばらつきを抑制し、最適値に設定可能である。 The vibrating body displaceable area 122 and the upper vibrating body displaceable area 132 are formed by wet etching, and the gap between the vibrating bodies 105a and 105b can be controlled in nanometer order. Thereby, the sensitivity variation for every sensor can be suppressed and it can set to an optimal value.
また、振動体１０５ａ，１０５ｂの存在する内部空間は活性層気密枠１０３とセンサ層気密枠１０８と上活性層気密枠１１２によって外部から隔離されている。これにより振動体１０５ａ，１０５ｂの周囲の環境は安定しており、外部からのごみや湿気起因の振動体１０５ａ，１０５ｂの固着や、ガス流入に伴う圧力変動起因の感度変動を抑制している。 Further, the internal space where the vibrating bodies 105a and 105b exist is isolated from the outside by the active layer hermetic frame 103, the sensor layer hermetic frame 108, and the upper active layer hermetic frame 112. Accordingly, the environment around the vibrating bodies 105a and 105b is stable, and the fluctuation of the sensitivity due to the pressure fluctuation caused by gas inflow and the adhesion of the vibrating bodies 105a and 105b due to dust and moisture from the outside are suppressed.
実施例４の角速度センサにおいて、実施例１と同様に以下の効果を有する。
シリコン基板と検出電極の接触ではなく検出電極に延設された固定部の両基板に直接接合を用いて強固に接合し、接合界面を導通させることにより、接触抵抗変化が少なく長期間での感度やゼロ点出力の低下を防止する。また、検出電極にもシリコン基板を用いることで温度変化に伴う線膨脹係数差を起因とした歪を防ぎ、誤差の少ない高精度検出を可能とする。
The angular velocity sensor of the fourth embodiment has the following effects as in the first embodiment.
It is not a contact between the silicon substrate and the detection electrode, but it is firmly bonded to both substrates of the fixed part extended to the detection electrode using direct bonding, and the bonding interface is made conductive so that there is little change in contact resistance and long-term sensitivity. And prevents the zero point output from decreasing. In addition, by using a silicon substrate as the detection electrode, it is possible to prevent distortion caused by a difference in linear expansion coefficient due to a temperature change, and to perform highly accurate detection with few errors.
また、下部電極２と上部電極１１は振動体５と異なるサイズで形成した。これは可動部が面内方向であるｘ，ｙ方向に振動した際に、振動体５が下部電極２と上部電極１１の上を外れるように動作すると、下部電極２と振動体５や上部電極１１と振動体５の間の感度が低下し、見掛け上ｚ方向に変位したように計測されるのを防止する効果を有する。 Further, the lower electrode 2 and the upper electrode 11 were formed in a size different from that of the vibrating body 5. This is because when the movable body vibrates in the x and y directions, which are in-plane directions, if the vibrating body 5 moves so as to be off the lower electrode 2 and the upper electrode 11, the lower electrode 2, the vibrating body 5 and the upper electrode The sensitivity between 11 and the vibrating body 5 is reduced, and it has the effect of preventing the measurement from appearing to be displaced in the z direction.
１，１０１ 支持基板
２，１０２ａ，１０２ｂ 下部電極
３，１０３ 活性層気密枠
４，１０４ａ，１０４ｂ 上部電極用活性層固定部
５，１０５ａ，１０５ｂ 振動体
６，１０６ａ，１０６ｂ 上部電極用センサ層固定部
７，１０７ａ，１０７ｂ 下部電極用センサ層固定部
８，１０８ センサ層気密枠
９，１０９ａ，１０９ｂ 下部電極用上活性層固定部
１０，１１０ａ，１１０ｂ 上部電極用上活性層固定部
１１，１１１ａ，１１１ｂ 上部電極
１２，１１２ 上活性層気密枠
１３，１１３ 上支持基板
１４，１１４ａ，１１４ｂ 下部電極用外部電極
１５，１１５ 電極パッド
１６ａ，１６ｂ，１１６ａ〜１１６ｄ 振動体用活性層固定部
１７，１１７ａ，１１７ｂ 下部電極用活性層固定部
１８，１１８ａ，１１８ｂ 下部電極用活性層配線
１９ａ，１９ｂ，１１９ａ〜１１９ｄ センサ層固定部
２０ａ，２０ｂ，１２０ａ〜１２０ｄ 振動体支持梁
２２，１２２ 振動体変位可能エリア
２３，１２３ 活性層
２４，１２４ センサ層
２５，１２５ 上活性層
２７，１２７ａ，１２７ｂ 上部電極用外部電極
２８ａ，２８ｂ，１２８ａ〜１２８ｄ 振動体用上活性層固定部
３０，１３０ 絶縁層
３１，１３１ａ，１３１ｂ 上部電極用上活性層配線
３２，１３２ 上振動体変位可能エリア
３３ 導電性接合材料
３４，１３４ 上絶縁層
５０ 下部電極基板
６０ センサ基板
７０ 上部電極基板
１３５ リンク梁
DESCRIPTION OF SYMBOLS 1,101 Support substrate 2,102a, 102b Lower electrode 3,103 Active layer hermetic frame 4,104a, 104b Upper electrode active layer fixing | fixed part 5,105a, 105b Vibrating body 6,106a, 106b Upper electrode sensor layer fixing | fixed part 7, 107a, 107b Lower electrode sensor layer fixing portions 8, 108 Sensor layer hermetic frames 9, 109a, 109b Lower electrode upper active layer fixing portions 10, 110a, 110b Upper electrode upper active layer fixing portions 11, 111a, 111b Upper electrodes 12, 112 Upper active layer hermetic frames 13, 113 Upper support substrates 14, 114a, 114b Lower electrode external electrodes 15, 115 Electrode pads 16a, 16b, 116a to 116d Active layer fixing portions 17, 117a, 117b for vibrators Lower electrode active layer fixing portions 18, 118a, 118b Lower electrode active layer wirings 19a, 19b 119a to 119d Sensor layer fixing portions 20a, 20b, 120a to 120d Vibrating body support beams 22, 122 Vibrating body displaceable area 23, 123 Active layer 24, 124 Sensor layer 25, 125 Upper active layer 27, 127a, 127b For upper electrode External electrodes 28a, 28b, 128a to 128d Upper active layer fixing portion for vibrator
30, 130 Insulating layers 31, 131a, 131b Upper active layer wirings for upper electrodes 32, 132 Upper vibrating body displaceable area 33 Conductive bonding material 34, 134 Upper insulating layer 50 Lower electrode substrate 60 Sensor substrate 70 Upper electrode substrate 135 Link Beam
Claims (11)
前記第一の電極から一定の距離を設けて形成した振動体と前記振動体を梁により架設し前記第一の基板に固定した第二の固定部と前記第一の電極で検出した信号を外部電極に伝達するための第三の固定部とを備えた第二の基板と、を有し
前記第一の基板と前記第二の基板とは接合により固定されており、前記接合面を介して導通していることを特徴とする慣性力センサ。 A first substrate including a first electrode for inertial force detection and a first fixing portion for extracting a signal detected by the first electrode to an external electrode;
A vibration body formed at a certain distance from the first electrode, a second fixed portion fixed to the first substrate by linking the vibration body with a beam, and a signal detected by the first electrode externally A second substrate having a third fixing portion for transmitting to the electrode, wherein the first substrate and the second substrate are fixed by bonding, via the bonding surface An inertial force sensor characterized by being conductive.
前記振動体から一定の距離を設けて形成した慣性力検出のための第二の電極と前記第二の電極で検出した信号を外部電極に引き出すための第四の固定部と前記第一の電極で検出した信号を外部電極に伝達するための第五の固定部とを備えた第三の基板と、を有し
前記第一の基板と前記第二の基板、および、前記第二の基板と前記第三の基板とは、接合により固定され、前記接合面を介して導通している構造であることを特徴とする慣性力センサ。 The inertial force sensor according to claim 1,
A second electrode for detecting inertial force formed at a certain distance from the vibrating body, a fourth fixing portion for extracting a signal detected by the second electrode to an external electrode, and the first electrode And a third substrate having a fifth fixing part for transmitting the signal detected in step 5 to the external electrode, and the first substrate, the second substrate, and the second substrate The inertial force sensor according to claim 3, wherein the inertial force sensor has a structure in which the third substrate is fixed by bonding and is conducted through the bonding surface.
前記第一の基板と前記第二の基板、あるいは、前記第二の基板と前記第三の基板の基板間接合のうち少なくともいずれかの接合が直接接合であることを特徴とする慣性力センサ。 The inertial force sensor according to claim 2,
An inertial force sensor characterized in that at least one of the first substrate and the second substrate, or the inter-substrate bonding of the second substrate and the third substrate is a direct bonding.
前記第一の基板および前記第二の基板および前記第三の基板はそれぞれ気密枠を備えており、
前記気密枠同士を接合することにより前記気密枠の内部の気密を保つことを特徴とする慣性力センサ。 The inertial force sensor according to claim 3,
The first substrate, the second substrate, and the third substrate each have an airtight frame,
An inertial force sensor characterized by maintaining airtightness inside the airtight frame by joining the airtight frames.
前記気密枠の内部に前記振動体を備えることを特徴とする慣性力センサ。 The inertial force sensor according to claim 4,
An inertial force sensor comprising the vibrating body inside the hermetic frame.
前記第一の基板および前記第二の基板および前記第三の基板は、導電性シリコンで形成され、
前記第一の電極から前記第三の基板までの導通経路は、前記気密枠の内側に形成されていることを特徴とする慣性力センサ。 The inertial force sensor according to claim 4,
The first substrate, the second substrate and the third substrate are formed of conductive silicon;
An inertial force sensor, wherein a conduction path from the first electrode to the third substrate is formed inside the hermetic frame.
前記第一の電極の慣性力検出部と前記振動体の静電容量検出に使用する検出部の面積が異なることを特徴とする慣性力センサ。 The inertial force sensor according to claim 1,
The inertial force sensor characterized in that the inertial force detection unit of the first electrode and the detection unit used for capacitance detection of the vibrating body are different.
前記第二の電極の慣性力検出部と前記振動体の静電容量検出に使用する検出部の面積が異なることを特徴とする慣性力センサ。 The inertial force sensor according to claim 2,
The inertial force sensor characterized in that the inertial force detection unit of the second electrode and the detection unit used for detecting the capacitance of the vibrating body are different.
前記第一の電極に形成された慣性力検出部と前記第二の電極に形成された慣性力検出部の面積が同じであることを特徴とする慣性力センサ。 The inertial force sensor according to claim 8,
The inertial force sensor, wherein the inertial force detection unit formed on the first electrode and the inertial force detection unit formed on the second electrode have the same area.
前記第一の電極と前記振動体との距離と、前記第二の電極と前記振動体との距離と、が等しいことを特徴とする慣性力センサ。 The inertial force sensor according to claim 3,
An inertial force sensor characterized in that a distance between the first electrode and the vibrating body is equal to a distance between the second electrode and the vibrating body.
前記第一の基板と前記第二の基板、あるいは、前記第二の基板と前記第三の基板の基板間の接合のいずれか一方をＡｕ−Ｓｉ、Ａｕ−Ｓｎ、Ａｕ−Ｇｅ、Ａｕ−Ｉｎ、Ａｌ−Ｇｅ、Ｃｕ−Ｓｎのいずれかの共晶接合により接合されることを特徴とする慣性力センサ。 The inertial force sensor according to claim 3,
Either one of the first substrate and the second substrate, or the bonding between the second substrate and the third substrate is Au—Si, Au—Sn, Au—Ge, Au—In. , Al—Ge, Cu—Sn eutectic bonding.
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| JP2017009322A (en) * | 2015-06-17 | 2017-01-12 | 三菱電機株式会社 | Acceleration sensor and manufacturing method thereof |
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