JP2013164279A - Semiconductor device and electronic apparatus - Google Patents

Semiconductor device and electronic apparatus Download PDF

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Publication number
JP2013164279A
JP2013164279A JP2012026087A JP2012026087A JP2013164279A JP 2013164279 A JP2013164279 A JP 2013164279A JP 2012026087 A JP2012026087 A JP 2012026087A JP 2012026087 A JP2012026087 A JP 2012026087A JP 2013164279 A JP2013164279 A JP 2013164279A
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Prior art keywords
semiconductor device
protruding electrode
chip
electrode
protruding
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JP2012026087A
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Japanese (ja)
Inventor
Yugo Koyama
裕吾 小山
Hisayuki Tooda
寿幸 遠田
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Seiko Epson Corp
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Seiko Epson Corp
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Priority to JP2012026087A priority Critical patent/JP2013164279A/en
Publication of JP2013164279A publication Critical patent/JP2013164279A/en
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    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73207—Bump and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/8185—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of downsizing (thinning) and improving productivity, and to provide an electronic apparatus equipped with the semiconductor device.SOLUTION: A gyro sensor 1 comprises: a package base 11 having an internal terminal 15 with a convex first projecting electrode 15a on a principal plane 14 thereof; and an IC chip 20A having a second connection terminal 23 with a convex second projecting electrode 23a on a side of an active surface 21 side thereof. The IC chip 20A is arranged on the package base 11 such that the active surface 21 is upright to the principal plane 14 of the package base 11, and at least parts of the first projecting electrode 15a and the second projecting electrode 23a overlap with each other in planar view. The first projecting electrode 15a and the second projecting electrode 23a are coupled with each other via a conductive joint member 40.

Description

本発明は、半導体装置及びこの半導体装置を備えた電子機器に関する。   The present invention relates to a semiconductor device and an electronic apparatus including the semiconductor device.

従来、加速度や角速度などの物理量を検出するセンサー機能を備えた半導体装置として、複数のリードと、複数のリードに跨るように固定された半導体基板と、半導体基板に保持されたセンサー素子とを備え、半導体基板（以下、ＩＣチップという）の接続用端子が複数のリードと電気的に接続されている構成のセンサーデバイスが知られている（例えば、特許文献１参照）。   Conventionally, as a semiconductor device having a sensor function for detecting physical quantities such as acceleration and angular velocity, a plurality of leads, a semiconductor substrate fixed so as to straddle the plurality of leads, and a sensor element held on the semiconductor substrate are provided. A sensor device having a configuration in which connection terminals of a semiconductor substrate (hereinafter referred to as an IC chip) are electrically connected to a plurality of leads is known (for example, see Patent Document 1).

特開２０１１−１７９９４１号公報JP 2011-179941 A

図８は、従来（特許文献１）のセンサーデバイスの概略構成を示す模式図である。図８（ａ）は、リッド（蓋体）側から俯瞰した模式平面図であり、図８（ｂ）は、図８（ａ）のＡ−Ａ線での模式断面図である。なお、図８（ａ）では、便宜的にリッドを省略してある。
図８に示すように、特許文献１のセンサーデバイス１０１は、パッケージベース１１１とリッド１１３とを有して中空の略直方体形状に構成されたパッケージ１１０と、パッケージ１１０内に収容される、複数のＩＣチップ１２０と、複数のセンサー素子１３０と、複数のリード１５０と、を備えている。 FIG. 8 is a schematic diagram showing a schematic configuration of a conventional sensor device (Patent Document 1). FIG. 8A is a schematic plan view seen from the lid (lid body) side, and FIG. 8B is a schematic cross-sectional view taken along line AA in FIG. In FIG. 8A, the lid is omitted for convenience.
As shown in FIG. 8, the sensor device 101 of Patent Document 1 includes a package 110 having a package base 111 and a lid 113 and configured in a hollow, substantially rectangular parallelepiped shape, and a plurality of pieces housed in the package 110. An IC chip 120, a plurality of sensor elements 130, and a plurality of leads 150 are provided.

センサーデバイス１０１は、各ＩＣチップ１２０が複数のリード１５０に跨るように固定されている。そして、センサーデバイス１０１は、各ＩＣチップ１２０に保持された各センサー素子１３０の、物理量を検出する検出軸の方向（例えば、Ｘ’軸、Ｙ’軸、Ｚ’軸の各軸に沿った方向）に応じて、複数のリード１５０が平坦な状態や、直角に折り曲げられた状態で、パッケージベース１１１の端子１１５にそれぞれ固定されている。
これにより、センサーデバイス１０１は、方向の異なる複数の検出軸回りの角速度などの物理量を検出することができるとされている。 The sensor device 101 is fixed so that each IC chip 120 straddles a plurality of leads 150. The sensor device 101 then detects the direction of the detection axis for detecting the physical quantity of each sensor element 130 held by each IC chip 120 (for example, the direction along the X ′ axis, Y ′ axis, and Z ′ axis). ), The plurality of leads 150 are respectively fixed to the terminals 115 of the package base 111 in a flat state or a state bent at a right angle.
Thereby, it is supposed that the sensor device 101 can detect physical quantities such as angular velocities around a plurality of detection axes in different directions.

しかしながら、上記センサーデバイス１０１は、各センサー素子１３０を保持した各ＩＣチップ１２０のパッケージ１１０への搭載に複数のリード１５０が介在していることから、部品点数の多さに伴う生産性の低下や、小型化（薄型化）が阻害されているという問題がある。   However, since the sensor device 101 includes a plurality of leads 150 for mounting each IC chip 120 holding each sensor element 130 on the package 110, a decrease in productivity due to a large number of parts, There is a problem that miniaturization (thinning) is hindered.

本発明は、上記課題の少なくとも一部を解決するためになされたものであり、以下の形態または適用例として実現することが可能である。   SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

［適用例１］本適用例にかかる半導体装置は、凸状の第１突起電極が設けられた第１接続端子を主面に有する基板と、凸状の第２突起電極が設けられた第２接続端子を第１面側に有するＩＣチップと、を備え、前記ＩＣチップは、前記第１面が前記基板の前記主面に対して直立し、平面視で前記第１突起電極と前記第２突起電極との少なくとも一部が互いに重なるように前記基板上に配置され、前記第１突起電極と前記第２突起電極とが、導電性接合部材を介して互いに接続されていることを特徴とする。   Application Example 1 A semiconductor device according to this application example includes a substrate having a first connection terminal provided with a convex first protruding electrode on the main surface and a second electrode provided with a convex second protruding electrode. An IC chip having a connection terminal on the first surface side, and the IC chip has the first surface standing upright with respect to the main surface of the substrate, and the first protruding electrode and the second in a plan view. The projection electrode is disposed on the substrate so that at least a part of the projection electrode overlaps each other, and the first projection electrode and the second projection electrode are connected to each other through a conductive bonding member. .

これによれば、半導体装置は、ＩＣチップが、その第１面が基板の主面に対して直立するように基板上に配置され、基板の第１突起電極とＩＣチップの第２突起電極との少なくとも一部が互いに重なり、両者が互いに導電性接合部材を介して接続されている。
これにより、半導体装置は、第１突起電極と第２突起電極とによって、導電性接合部材が両電極間に保持され易くなることから、第１突起電極と第２突起電極との導通を確実に取ることができると共に、ＩＣチップを直立状態で基板に確実に固定することができる。加えて、半導体装置は、導電性接合部材が周囲に流出することなく両電極間に保持されることから、両電極と他の電極との導電性接合部材を介した短絡を回避することができる。 According to this, in the semiconductor device, the IC chip is arranged on the substrate so that the first surface thereof is upright with respect to the main surface of the substrate, and the first protruding electrode of the substrate and the second protruding electrode of the IC chip are Are overlapped with each other, and both are connected to each other via a conductive bonding member.
As a result, the first protruding electrode and the second protruding electrode make it easier for the semiconductor device to hold the conductive bonding member between the two electrodes, so that the conduction between the first protruding electrode and the second protruding electrode is ensured. In addition, the IC chip can be securely fixed to the substrate in an upright state. In addition, in the semiconductor device, since the conductive bonding member is held between both electrodes without flowing out to the surroundings, a short circuit between the both electrodes and the other electrode via the conductive bonding member can be avoided. .

この結果、半導体装置は、上記構成を特許文献１の半導体装置としてのセンサーデバイスに適用することによって、ＩＣチップを基板としてのパッケージに直に直立させることができる。
これにより、半導体装置は、センサーデバイスの複数のリードが不要となることから、センサーデバイスを小型化（薄型化）し、生産性を向上させることが可能となる。 As a result, by applying the above configuration to the sensor device as the semiconductor device of Patent Document 1, the semiconductor device can directly stand the IC chip on the package as the substrate.
As a result, the semiconductor device does not require a plurality of leads of the sensor device, so that the sensor device can be reduced in size (thinned) and productivity can be improved.

［適用例２］上記適用例にかかる半導体装置において、前記第１突起電極と前記第２突起電極との間には、隙間が設けられていることが好ましい。   Application Example 2 In the semiconductor device according to the application example described above, it is preferable that a gap is provided between the first protruding electrode and the second protruding electrode.

これによれば、半導体装置は、第１突起電極と第２突起電極との間に隙間が設けられていることから、基板の第１突起電極とＩＣチップの第２突起電極とが互いに干渉することなく、ＩＣチップの直立度を調整することができる。   According to this, in the semiconductor device, since the gap is provided between the first protruding electrode and the second protruding electrode, the first protruding electrode of the substrate and the second protruding electrode of the IC chip interfere with each other. The uprightness of the IC chip can be adjusted without any problems.

［適用例３］上記適用例にかかる半導体装置において、前記第２突起電極は、ループ状の金属ワイヤーで構成されていることが好ましい。   Application Example 3 In the semiconductor device according to the application example, it is preferable that the second protruding electrode is formed of a looped metal wire.

これによれば、半導体装置は、第２突起電極がループ状の金属ワイヤーで構成されていることから、第２突起電極の突出量を容易に大きくすることができる。   According to this, since the 2nd projection electrode is comprised with the loop-shaped metal wire, the semiconductor device can enlarge the protrusion amount of a 2nd projection electrode easily.

［適用例４］上記適用例にかかる半導体装置において、前記第２突起電極は、多段バンプで構成されていることが好ましい。   Application Example 4 In the semiconductor device according to the application example described above, it is preferable that the second protruding electrode is formed of a multi-stage bump.

これによれば、半導体装置は、第２突起電極が多段バンプ（バンプの上に更にバンプを積み重ねたもの）で構成されていることから、第２突起電極の突出量を容易に大きくすることができる。   According to this, in the semiconductor device, since the second protruding electrode is composed of multi-stage bumps (the bumps are further stacked on the bumps), the protruding amount of the second protruding electrodes can be easily increased. it can.

［適用例５］上記適用例にかかる半導体装置において、物理量を検出するセンサー素子を更に備え、前記ＩＣチップの前記第１面側には、前記センサー素子が配置され、前記第２突起電極は、前記第１面からの突出量が前記センサー素子における前記第１面からの突出量よりも大きいことが好ましい。   Application Example 5 In the semiconductor device according to the application example described above, the semiconductor device further includes a sensor element that detects a physical quantity, the sensor element is disposed on the first surface side of the IC chip, and the second protruding electrode is It is preferable that the amount of protrusion from the first surface is larger than the amount of protrusion from the first surface of the sensor element.

これによれば、半導体装置は、ＩＣチップの第１面側にセンサー素子が配置され、第２突起電極は、第１面からの突出量がセンサー素子の第１面からの突出量よりも大きいことから、導電性接合部材を、センサー素子と干渉することなく、第１突起電極及び第２突起電極に付着させる（塗布する）ことができる。   According to this, in the semiconductor device, the sensor element is disposed on the first surface side of the IC chip, and the protruding amount of the second protruding electrode from the first surface is larger than the protruding amount of the sensor element from the first surface. Accordingly, the conductive bonding member can be attached (applied) to the first protruding electrode and the second protruding electrode without interfering with the sensor element.

［適用例６］本適用例にかかる電子機器は、上記適用例のいずれかに記載の半導体装置を備えていることを特徴とする。   Application Example 6 An electronic apparatus according to this application example includes the semiconductor device according to any one of the application examples described above.

これによれば、本構成の電子機器は、上記適用例のいずれかに記載の半導体装置を備えていることから、上記適用例のいずれかに記載の効果が反映された電子機器を提供することができる。   According to this, since the electronic apparatus of this configuration includes the semiconductor device described in any of the above application examples, the electronic apparatus reflecting the effect described in any of the above application examples is provided. Can do.

半導体装置の一例としてのセンサーデバイスの概略構成を示す模式図であり、（ａ）はリッド（蓋体）側から俯瞰した模式平面図、（ｂ）は（ａ）のＡ−Ａ線での模式断面図。It is a schematic diagram which shows schematic structure of the sensor device as an example of a semiconductor device, (a) is a schematic top view seen from the lid (lid body) side, (b) is a schematic in the AA line of (a). Sectional drawing. 図１（ｂ）のＢ部の模式拡大図。The model enlarged view of the B section of Drawing 1 (b). ＩＣチップの構成を説明する模式要部断面図。FIG. 3 is a schematic cross-sectional view of a main part for explaining the configuration of an IC chip. 振動ジャイロ素子の模式拡大平面図。The model enlarged plan view of a vibration gyro element. 振動ジャイロ素子の駆動振動状態を示す模式平面図。The schematic plan view which shows the drive vibration state of a vibration gyro element. （ａ）、（ｂ）は振動ジャイロ素子の角速度が加わった状態における検出振動状態を示す模式平面図。(A), (b) is a schematic top view which shows the detection vibration state in the state to which the angular velocity of the vibration gyro element was added. 模式要部拡大断面図。The model principal part expanded sectional view. 従来のセンサーデバイスの概略構成を示す模式図であり、（ａ）はリッド側から俯瞰した模式平面図、（ｂ）は（ａ）のＡ−Ａ線での模式断面図。It is a schematic diagram which shows schematic structure of the conventional sensor device, (a) is a schematic top view seen from the lid side, (b) is a schematic cross section in the AA line of (a).

以下、本発明を具体化した実施形態について図面を参照して説明する。   DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings.

（実施形態）
図１は、半導体装置の一例としてのセンサーデバイスの概略構成を示す模式図である。図１（ａ）は、リッド（蓋体）側から俯瞰した模式平面図であり、図１（ｂ）は、図１（ａ）のＡ−Ａ線での模式断面図である。図２は、図１（ｂ）のＢ部の模式拡大図であり、図３は、ＩＣチップの構成を説明する模式要部断面図である。
なお、図１（ａ）では、便宜的にリッドを省略し、リッドの内壁形状を２点鎖線で示し、図１（ｂ）では、便宜的に一部の構成要素を省略してある。また、分かり易くするために、各図における各構成要素の寸法比率は、実際と異なる。図中のＸ’軸、Ｙ’軸、Ｚ’軸は、互いに直交する軸である。 (Embodiment)
FIG. 1 is a schematic diagram illustrating a schematic configuration of a sensor device as an example of a semiconductor device. FIG. 1A is a schematic plan view seen from the lid (lid) side, and FIG. 1B is a schematic cross-sectional view taken along line AA of FIG. FIG. 2 is a schematic enlarged view of a portion B of FIG. 1B, and FIG. 3 is a schematic cross-sectional view of a main part for explaining the configuration of the IC chip.
In FIG. 1A, the lid is omitted for the sake of convenience, and the inner wall shape of the lid is indicated by a two-dot chain line, and in FIG. 1B, some components are omitted for the sake of convenience. In addition, for easy understanding, the dimensional ratio of each component in each drawing is different from the actual one. The X ′ axis, Y ′ axis, and Z ′ axis in the drawing are axes orthogonal to each other.

本実施形態では、センサーデバイスの一具体例として、ジャイロセンサーについて説明する。
図１に示すように、ジャイロセンサー１は、パッケージ１０と、パッケージ１０内に収容されたＩＣチップ２０Ａ，２０Ｂと、ＩＣチップ２０Ａ，２０Ｂに配置（搭載）された物理量（ここでは、角速度）を検出するセンサー素子としての振動ジャイロ素子３０と、を備えている。 In this embodiment, a gyro sensor will be described as a specific example of a sensor device.
As shown in FIG. 1, the gyro sensor 1 includes a package 10, IC chips 20 </ b> A and 20 </ b> B housed in the package 10, and a physical quantity (here, angular velocity) arranged (mounted) on the IC chips 20 </ b> A and 20 </ b> B. And a vibrating gyro element 30 as a sensor element to be detected.

パッケージ１０は、基板としての矩形平板状のパッケージベース１１と、凹部１２を有しパッケージベース１１を覆う箱状のリッド（蓋体）１３と、を備え、中空の略直方体形状に構成されている。
パッケージベース１１には、セラミックグリーンシートを成形して焼成した酸化アルミニウム質焼結体、ムライト質焼結体、窒化アルミニウム質焼結体、炭化珪素質焼結体、ガラスセラミックス焼結体などのセラミックス系の絶縁性材料や、水晶、ガラスなどの絶縁性材料が用いられている。 The package 10 includes a rectangular flat plate-shaped package base 11 as a substrate and a box-shaped lid (lid body) 13 having a recess 12 and covering the package base 11, and is configured in a hollow, substantially rectangular parallelepiped shape. .
The package base 11 includes ceramics such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, a silicon carbide sintered body, and a glass ceramic sintered body formed by firing a ceramic green sheet. Insulating materials such as quartz and glass are used.

リッド１３には、パッケージベース１１と同材料、または、コバール、４２アロイ、ステンレス鋼などの金属が用いられている。
リッド１３は、後述するＩＣチップ２０Ａ，２０Ｂ、振動ジャイロ素子３０がパッケージベース１１に搭載された後、シールリング、低融点ガラス、接着剤などの接合部材４２によりパッケージベース１１へ取り付けられる。これにより、パッケージ１０の内部は、気密に封止されている。
なお、パッケージ１０の内部は、振動ジャイロ素子３０の振動が阻害されないように、真空状態（真空度が高い状態）に保持されていることが好ましい。 The lid 13 is made of the same material as the package base 11 or a metal such as Kovar, 42 alloy, or stainless steel.
The lid 13 is attached to the package base 11 by a bonding member 42 such as a seal ring, low-melting-point glass, and adhesive after IC chips 20A and 20B, which will be described later, and a vibrating gyro element 30 are mounted on the package base 11. Thereby, the inside of the package 10 is hermetically sealed.
Note that the inside of the package 10 is preferably maintained in a vacuum state (a high degree of vacuum) so that the vibration of the vibration gyro element 30 is not hindered.

パッケージベース１１の主面１４（リッド１３に覆われる面）には、２つのＩＣチップ２０Ａとの接続用の、第１接続端子としての内部端子１５，１６が複数設けられている。また、パッケージベース１１の主面１４には、ＩＣチップ２０Ｂとの接続用の内部端子１７が複数設けられている。
内部端子１５，１６には、凸状の第１突起電極１５ａ，１６ａが設けられている。
パッケージベース１１の底面１８（主面１４の反対側の面）には、外部機器（外部部材）などに実装される際に用いられる外部端子１９が複数設けられている。
内部端子１５，１６，１７は、図示しない内部配線により、外部端子１９に接続されている。 A plurality of internal terminals 15 and 16 as first connection terminals for connection with the two IC chips 20A are provided on the main surface 14 (surface covered with the lid 13) of the package base 11. The main surface 14 of the package base 11 is provided with a plurality of internal terminals 17 for connection with the IC chip 20B.
The internal terminals 15 and 16 are provided with convex first protruding electrodes 15a and 16a.
A plurality of external terminals 19 used for mounting on an external device (external member) or the like are provided on the bottom surface 18 (surface opposite to the main surface 14) of the package base 11.
The internal terminals 15, 16, and 17 are connected to the external terminal 19 by internal wiring (not shown).

内部端子１５，１６，１７及び外部端子１９は、例えば、タングステン（Ｗ）やモリブデン（Ｍｏ）などの金属粉末に有機バインダー、溶剤を添加混合して得た金属ペーストを、例えば、スクリーン印刷法を用いて印刷（塗布）後、加熱処理することによって形成されたメタライズ層に、ニッケル（Ｎｉ）、金（Ａｕ）などの各被膜をメッキ法などにより積層した金属被膜からなる。
図２に示すように、第１突起電極１５ａ，１６ａは、金（Ａｕ）、銅（Ｃｕ）などの金属ワイヤーをワイヤーボンディング技術である超音波圧着法などにより略円板状（略太鼓状）に加工したバンプで構成されている。なお、このバンプ形成の際には、金属ワイヤーを操作するキャピラリー（工具）を、紙面左右方向に移動させて金属ワイヤーを切断することが好ましい。これにより、第１突起電極１５ａ，１６ａは、バンプの中央部の盛り上がりを抑制できる。 The internal terminals 15, 16, 17 and the external terminal 19 are made of a metal paste obtained by adding and mixing an organic binder and a solvent to a metal powder such as tungsten (W) or molybdenum (Mo). It is composed of a metal film obtained by laminating each film of nickel (Ni), gold (Au), etc. by a plating method or the like on a metallized layer formed by heat treatment after printing (coating).
As shown in FIG. 2, the first protruding electrodes 15 a and 16 a are substantially disc-shaped (substantially drum-shaped) by an ultrasonic pressure bonding method that is a wire bonding technique using a metal wire such as gold (Au) or copper (Cu). It consists of bumps processed into In forming the bump, it is preferable to cut the metal wire by moving a capillary (tool) for manipulating the metal wire in the left-right direction on the paper surface. Thereby, the 1st projection electrodes 15a and 16a can suppress the swelling of the center part of a bump.

なお、パッケージは、凹部を有したパッケージベースと、パッケージベースを覆う平板状のリッドなどから構成されていてもよい。また、パッケージは、パッケージベース及びリッドの両方に凹部を有していてもよい。   The package may include a package base having a recess and a flat lid that covers the package base. The package may have a recess in both the package base and the lid.

図２、図３に示すように、ＩＣチップ２０Ａ，２０Ｂは、第１面としての能動面２１側の一辺に沿って、第２接続端子２３が複数設けられている。そして、ＩＣチップ２０Ａの各第２接続端子２３には、凸状の第２突起電極２３ａが設けられている。
第２突起電極２３ａは、金（Ａｕ）、銅（Ｃｕ）などの金属ワイヤーを超音波圧着法などにより加工した多段バンプ（バンプの上に更にバンプを積み重ねたもの、ここでは３段重ね）で構成されている。
なお、ＩＣチップ２０ＡとＩＣチップ２０Ｂとの相違点は、第２突起電極２３ａの有無のみである。 As shown in FIGS. 2 and 3, the IC chips 20 </ b> A and 20 </ b> B are provided with a plurality of second connection terminals 23 along one side of the active surface 21 as the first surface. Each second connection terminal 23 of the IC chip 20A is provided with a convex second protruding electrode 23a.
The second protruding electrode 23a is a multi-stage bump formed by processing a metal wire such as gold (Au) or copper (Cu) by an ultrasonic pressure bonding method or the like (in which bumps are further stacked on the bump, in this case, three-stage stacking). It is configured.
The difference between the IC chip 20A and the IC chip 20B is only the presence or absence of the second protruding electrode 23a.

ＩＣチップ２０Ａは、能動面２１がパッケージベース１１の主面１４に対して直立し（能動面２１と主面１４との成す角度が略直角になり）、平面視でパッケージベース１１の第１突起電極１５ａ，１６ａのそれぞれと、各ＩＣチップ２０Ａの第２突起電極２３ａのそれぞれとの、少なくとも一部が互いに重なるようにパッケージベース１１の主面１４上に配置されている。
そして、パッケージベース１１の第１突起電極１５ａ，１６ａと各ＩＣチップ２０Ａの第２突起電極２３ａとが、導電性接合部材４０を介して互いに接続されている。これにより、各ＩＣチップ２０Ａは、パッケージベース１１に固定されると共に、第１突起電極１５ａ，１６ａと第２突起電極２３ａとが電気的に接続される。 In the IC chip 20A, the active surface 21 stands upright with respect to the main surface 14 of the package base 11 (the angle formed by the active surface 21 and the main surface 14 is substantially perpendicular), and the first protrusion of the package base 11 in plan view. Each of the electrodes 15a and 16a and each of the second protruding electrodes 23a of each IC chip 20A are disposed on the main surface 14 of the package base 11 so that at least a part thereof overlaps each other.
The first protruding electrodes 15 a and 16 a of the package base 11 and the second protruding electrode 23 a of each IC chip 20 </ b> A are connected to each other via the conductive bonding member 40. Accordingly, each IC chip 20A is fixed to the package base 11, and the first protruding electrodes 15a and 16a and the second protruding electrode 23a are electrically connected.

この際、図２に示すように、第２突起電極２３ａは、能動面２１からの突出量Ｈ１が、ＩＣチップ２０Ａの能動面２１側に配置された振動ジャイロ素子３０における能動面２１からの突出量Ｈ２よりも大きくなるように形成されている。
また、第２突起電極２３ａと第１突起電極１５ａ，１６ａとの間には、互いに干渉しないように隙間が設けられている。
なお、導電性接合部材４０には、例えば、金属フィラー（一例として銀（Ａｇ）フィラー）などの導電性物質が混合された、エポキシ系、シリコーン系、ポリイミド系などの導電性接着剤が用いられている。 At this time, as shown in FIG. 2, the second protruding electrode 23a has a protruding amount H1 from the active surface 21 protruding from the active surface 21 in the vibrating gyro element 30 arranged on the active surface 21 side of the IC chip 20A. It is formed to be larger than the amount H2.
Further, a gap is provided between the second protruding electrode 23a and the first protruding electrodes 15a and 16a so as not to interfere with each other.
For the conductive bonding member 40, for example, an epoxy-based, silicone-based, polyimide-based or the like conductive adhesive mixed with a conductive material such as a metal filler (for example, silver (Ag) filler) is used. ing.

図１に戻って、ＩＣチップ２０Ｂは、能動面２１の反対側の面であって、能動面２１に沿った（略平行な）非能動面２９側が、パッケージベース１１の主面１４に図示しない接着剤などで固定されている。
そして、ＩＣチップ２０Ｂは、ワイヤーボンディング法などにより金（Ａｕ）、アルミニウム（Ａｌ）、銅（Ｃｕ）などの金属ワイヤー４１を介して、第２接続端子２３がパッケージベース１１の内部端子１７と電気的に接続されている。 Returning to FIG. 1, the IC chip 20 </ b> B is a surface opposite to the active surface 21, and the non-active surface 29 side (almost parallel) along the active surface 21 is not shown in the main surface 14 of the package base 11. It is fixed with adhesive.
The IC chip 20B is electrically connected to the internal terminal 17 of the package base 11 via the metal wire 41 such as gold (Au), aluminum (Al), copper (Cu), etc. by the wire bonding method or the like. Connected.

ここで、パッケージベース１１に固定された、２つのＩＣチップ２０Ａ、ＩＣチップ２０Ｂは、各能動面２１同士の成す角度が直角になるように配置されている。換言すれば、ジャイロセンサー１は、一方（図１の紙面左側）のＩＣチップ２０Ａの能動面２１に対する法線がＸ’軸に沿い、他方（図１の紙面右側）のＩＣチップ２０Ａの能動面２１に対する法線がＹ’軸に沿い、ＩＣチップ２０Ｂの能動面２１に対する法線がＺ’軸に沿うように、２つのＩＣチップ２０Ａ、ＩＣチップ２０Ｂがパッケージベース１１上に取り付けられている。
これに伴い、パッケージベース１１の内部端子１５，１６，１７は、上記配置における第２接続端子２３（第２突起電極２３ａ）に対応した位置に設けられている。 Here, the two IC chips 20 </ b> A and 20 </ b> B fixed to the package base 11 are arranged so that the angles formed by the active surfaces 21 are perpendicular to each other. In other words, in the gyro sensor 1, the normal to the active surface 21 of the IC chip 20A on one side (left side of FIG. 1) is along the X ′ axis, and the active surface of the other (right side of FIG. 1) IC chip 20A. Two IC chips 20 </ b> A and 20 </ b> B are mounted on the package base 11 so that the normal line to 21 is along the Y ′ axis and the normal line to the active surface 21 of the IC chip 20 </ b> B is along the Z ′ axis.
Accordingly, the internal terminals 15, 16, and 17 of the package base 11 are provided at positions corresponding to the second connection terminals 23 (second protruding electrodes 23a) in the above arrangement.

ここで、ＩＣチップ２０Ａ，２０Ｂの構成について詳述する。
図３に示すように、ＩＣチップ２０Ａ，２０Ｂには、能動面２１側にトランジスターやメモリー素子などの半導体素子を含んで構成される集積回路（図示せず）が形成されている。この集積回路には、振動ジャイロ素子３０を駆動振動させる駆動回路と、角速度が加わったときに振動ジャイロ素子３０に生じる検出振動を検出する検出回路とが備えられている。
ＩＣチップ２０Ａ，２０Ｂは、能動面２１側に設けられた第１の電極２４と、第１の電極２４に電気的に接続されて能動面２１側に設けられた接続端子２２と、能動面２１と接続端子２２との間に設けられた応力緩和層２５と、能動面２１側に設けられた第２接続端子２３とを備えている。 Here, the configuration of the IC chips 20A and 20B will be described in detail.
As shown in FIG. 3, IC chips 20A and 20B are formed with an integrated circuit (not shown) including semiconductor elements such as transistors and memory elements on the active surface 21 side. This integrated circuit includes a drive circuit that drives and vibrates the vibration gyro element 30 and a detection circuit that detects a detection vibration generated in the vibration gyro element 30 when an angular velocity is applied.
The IC chips 20A and 20B include a first electrode 24 provided on the active surface 21 side, a connection terminal 22 electrically connected to the first electrode 24 and provided on the active surface 21 side, and an active surface 21. And a connection terminal 22 are provided with a stress relaxation layer 25 and a second connection terminal 23 provided on the active surface 21 side.

第１の電極２４は、ＩＣチップ２０Ａ，２０Ｂの集積回路に直接導通して形成されたものである。また、能動面２１上には、パッシベーション膜となる第１絶縁層２６が形成されており、この第１絶縁層２６には、第１の電極２４上に開口部２６ａが形成されている。
このような構成によって第１の電極２４は、開口部２６ａ内にて外側に露出した状態となっている。 The first electrode 24 is formed by direct conduction to the integrated circuit of the IC chips 20A and 20B. Further, a first insulating layer 26 serving as a passivation film is formed on the active surface 21, and an opening 26 a is formed on the first electrode 24 in the first insulating layer 26.
With such a configuration, the first electrode 24 is exposed to the outside in the opening 26a.

第１絶縁層２６上には、第１の電極２４や他の電極を避けた位置に、絶縁樹脂からなる応力緩和層２５が形成されている。
また、第１の電極２４には、第１絶縁層２６の開口部２６ａ内にて再配置配線としての配線２７が接続されている。この配線２７は、集積回路の電極の再配置を行うためのもので、ＩＣチップ２０Ａ，２０Ｂの所定部に配置された第１の電極２４から延びて形成され、さらに応力緩和層２５上にまで引き回されて形成されたものである。
この配線２７は、ＩＣチップ２０Ａ，２０Ｂの第１の電極２４と接続端子２２との間を配線することから、一般的には再配置配線とよばれ、微細設計によって位置の制約が大きい第１の電極２４に対して、接続端子２２の位置を任意にずらして配置し、ＩＣチップ２０Ａ，２０Ｂにおける振動ジャイロ素子３０との接続位置の自由度を高めるための重要な構成要素である。 On the first insulating layer 26, a stress relaxation layer 25 made of an insulating resin is formed at a position avoiding the first electrode 24 and other electrodes.
Further, the first electrode 24 is connected to a wiring 27 as a rearrangement wiring in the opening 26 a of the first insulating layer 26. The wiring 27 is for rearranging the electrodes of the integrated circuit, and is formed extending from the first electrode 24 disposed in a predetermined portion of the IC chips 20A and 20B, and further up to the stress relaxation layer 25. It is formed by being drawn around.
Since this wiring 27 is wired between the first electrode 24 and the connection terminal 22 of the IC chips 20A and 20B, it is generally referred to as a rearrangement wiring, and the first has a large positional restriction due to fine design. This is an important component for increasing the degree of freedom of the connection position of the IC chip 20A, 20B with the vibration gyro element 30 by arbitrarily shifting the position of the connection terminal 22 with respect to the electrode 24.

また、ＩＣチップ２０Ａ，２０Ｂの能動面２１側には、配線２７や応力緩和層２５、第１絶縁層２６を覆って樹脂からなる耐熱性を有した第２絶縁層２８が形成されている。なお、第２絶縁層２８は、ソルダーレジストでもよい。
この第２絶縁層２８には、応力緩和層２５上にて配線２７上に開口部２８ａが形成されている。このような構成によって配線２７の一部は、開口部２８ａ内にて外側に露出した状態となっている。 On the active surface 21 side of the IC chips 20A and 20B, a heat-resistant second insulating layer 28 made of resin is formed so as to cover the wiring 27, the stress relaxation layer 25, and the first insulating layer 26. Note that the second insulating layer 28 may be a solder resist.
In the second insulating layer 28, an opening 28 a is formed on the wiring 27 on the stress relaxation layer 25. With such a configuration, a part of the wiring 27 is exposed to the outside in the opening 28a.

そして、この開口部２８ａ内に露出した配線２７上に、接続端子２２が配設されている。この接続端子２２は、例えば、ハンダボール、金線、アルミニウム線などを用いて形成された突起電極となっている。ここで、接続端子２２として、樹脂突起の表面に金属膜や導電性接着剤などを設けたバンプ（例えば、樹脂コアバンプ）を用いることも可能である。また、金属バンプの表面に導電性接着剤などを設けることで、接続端子２２による電気的接続を更に確実にしてもよい。
このような構成のもとに、ＩＣチップ２０Ａ，２０Ｂに形成された集積回路は、第１の電極２４、配線２７、接続端子２２を介して振動ジャイロ素子３０と電気的に接続されるようになっている。 The connection terminal 22 is disposed on the wiring 27 exposed in the opening 28a. The connection terminal 22 is a protruding electrode formed using, for example, a solder ball, a gold wire, an aluminum wire, or the like. Here, as the connection terminal 22, a bump (for example, a resin core bump) in which a metal film, a conductive adhesive, or the like is provided on the surface of the resin protrusion can be used. Moreover, you may further ensure the electrical connection by the connection terminal 22 by providing a conductive adhesive etc. on the surface of a metal bump.
Based on such a configuration, the integrated circuit formed on the IC chips 20A and 20B is electrically connected to the vibrating gyro element 30 via the first electrode 24, the wiring 27, and the connection terminal 22. It has become.

また、ＩＣチップ２０Ａ，２０Ｂに形成された集積回路には、第１の電極２４以外に図示しない他の電極が形成されている。この他の電極は、第１の電極２４の場合と同様に、再配置配線が接続され、第２絶縁層２８の開口部２８ｂ内にて、外部に露出した第２接続端子２３と接続されている。   In addition to the first electrode 24, other electrodes (not shown) are formed on the integrated circuits formed on the IC chips 20A and 20B. Similar to the case of the first electrode 24, the other electrodes are connected to the rearrangement wiring and connected to the second connection terminal 23 exposed to the outside in the opening 28 b of the second insulating layer 28. Yes.

第１の電極２４、他の電極、配線２７などの再配置配線は、金（Ａｕ）、銅（Ｃｕ）、銀（Ａｇ）、チタン（Ｔｉ）、タングステン（Ｗ）、チタンタングステン（ＴｉＷ）、窒化チタン（ＴｉＮ）、ニッケル（Ｎｉ）、ニッケルバナジウム（ＮｉＶ）、クロム（Ｃｒ）、アルミニウム（Ａｌ）、パラジウム（Ｐｄ）などによって形成されている。
また、第１絶縁層２６、第２絶縁層２８を形成するための樹脂としては、例えばポリイミド樹脂、シリコーン変性ポリイミド樹脂、エポキシ樹脂、シリコーン変性エポキシ樹脂、アクリル樹脂、フェノール樹脂、ＢＣＢ（ｂｅｎｚｏｃｙｃｌｏｂｕｔｅｎｅ）及びＰＢＯ（ｐｏｌｙｂｅｎｚｏｘａｚｏｌｅ）などが用いられる。
なお、第１絶縁層２６については、酸化珪素（ＳｉＯ2）、窒化珪素（Ｓｉ3Ｎ4）などの無機絶縁材料によって形成することもできる。 The rearrangement wiring such as the first electrode 24, the other electrode, and the wiring 27 includes gold (Au), copper (Cu), silver (Ag), titanium (Ti), tungsten (W), titanium tungsten (TiW), It is formed of titanium nitride (TiN), nickel (Ni), nickel vanadium (NiV), chromium (Cr), aluminum (Al), palladium (Pd), or the like.
Examples of the resin for forming the first insulating layer 26 and the second insulating layer 28 include a polyimide resin, a silicone-modified polyimide resin, an epoxy resin, a silicone-modified epoxy resin, an acrylic resin, a phenol resin, BCB (benzocyclobutene), and PBO (polybenzoxole) or the like is used.
The first insulating layer 26 can also be formed of an inorganic insulating material such as silicon oxide (SiO 2 ) or silicon nitride (Si 3 N 4 ).

ここで、センサー素子としての振動ジャイロ素子３０の構成について詳述する。
図４は、振動ジャイロ素子の模式拡大平面図である。
図４に示すように、振動ジャイロ素子３０は、圧電材料である水晶を基材（主要部分を構成する材料）として形成されている。水晶は、電気軸と呼ばれるＸ軸、機械軸と呼ばれるＹ軸及び光学軸と呼ばれるＺ軸を有している。
そして、振動ジャイロ素子３０は、水晶結晶軸において直交するＸ軸及びＹ軸で規定される平面に沿って切り出されて平板状に加工され、平面と直交するＺ軸方向に所定の厚みを有している。なお、所定の厚みは、発振周波数（共振周波数）、外形サイズ、加工性などにより適宜設定される。 Here, the configuration of the vibration gyro element 30 as a sensor element will be described in detail.
FIG. 4 is a schematic enlarged plan view of the vibrating gyro element.
As shown in FIG. 4, the vibrating gyro element 30 is formed by using quartz, which is a piezoelectric material, as a base material (material constituting a main part). The crystal has an X axis called an electric axis, a Y axis called a mechanical axis, and a Z axis called an optical axis.
The vibrating gyro element 30 is cut out along a plane defined by the X-axis and the Y-axis orthogonal to the crystal crystal axis and processed into a flat plate shape, and has a predetermined thickness in the Z-axis direction orthogonal to the plane. ing. The predetermined thickness is appropriately set depending on the oscillation frequency (resonance frequency), the outer size, workability, and the like.

また、振動ジャイロ素子３０を成す平板は、水晶からの切り出し角度の誤差を、Ｘ軸、Ｙ軸及びＺ軸の各々につき多少の範囲で許容できる。例えば、平板は、Ｘ軸を中心に０度から７度の範囲で回転して切り出したものを使用することができる。これは、Ｙ軸及びＺ軸についても同様である。
振動ジャイロ素子３０は、フォトリソグラフィー技術を用いたエッチング（ウエットエッチングまたはドライエッチング）により形成されている。なお、振動ジャイロ素子３０は、１枚の水晶ウエハーから複数個取りすることが可能である。 Further, the flat plate forming the vibrating gyro element 30 can tolerate errors in the angle of cut-out from the quartz crystal in a certain range for each of the X axis, the Y axis, and the Z axis. For example, a flat plate that is cut out by rotating in the range of 0 to 7 degrees around the X axis can be used. The same applies to the Y axis and the Z axis.
The vibrating gyro element 30 is formed by etching (wet etching or dry etching) using a photolithography technique. Note that a plurality of vibrating gyro elements 30 can be taken from a single quartz wafer.

振動ジャイロ素子３０は、ダブルＴ型と呼ばれる構成となっている。
振動ジャイロ素子３０は、中心部分に位置する基部３１と、基部３１からＹ軸に沿って延伸された１対の検出用振動腕３２ａ，３２ｂと、検出用振動腕３２ａ，３２ｂと直交するように、基部３１からＸ軸に沿って延伸された１対の連結腕３３ａ，３３ｂと、検出用振動腕３２ａ，３２ｂと略平行になるように、各連結腕３３ａ，３３ｂの先端側からＹ軸に沿って延伸された各１対の駆動用振動腕３４ａ，３４ｂ，３５ａ，３５ｂとを備えている。 The vibration gyro element 30 has a configuration called a double T type.
The vibrating gyro element 30 is orthogonal to the base 31 located at the center, the pair of detection vibrating arms 32a and 32b extending from the base 31 along the Y axis, and the detection vibrating arms 32a and 32b. The pair of connecting arms 33a and 33b extended from the base 31 along the X axis and the detection vibrating arms 32a and 32b are substantially parallel to the Y axis from the distal end side of the connecting arms 33a and 33b. A pair of driving vibrating arms 34a, 34b, 35a, and 35b extending along the line is provided.

また、振動ジャイロ素子３０は、検出用振動腕３２ａ，３２ｂに、図示しない検出電極が形成され、駆動用振動腕３４ａ，３４ｂ，３５ａ，３５ｂに、図示しない駆動電極が形成されている。
振動ジャイロ素子３０は、検出用振動腕３２ａ，３２ｂで、角速度を検出する検出振動系を構成し、連結腕３３ａ，３３ｂと駆動用振動腕３４ａ，３４ｂ，３５ａ，３５ｂとで、振動ジャイロ素子３０を駆動する駆動振動系を構成している。 In the vibrating gyro element 30, detection electrodes (not shown) are formed on the detection vibrating arms 32a and 32b, and drive electrodes (not shown) are formed on the driving vibration arms 34a, 34b, 35a, and 35b.
The vibration gyro element 30 constitutes a detection vibration system that detects angular velocity by the vibration arms 32a and 32b for detection, and the vibration gyro element 30 includes the connection arms 33a and 33b and the drive vibration arms 34a, 34b, 35a, and 35b. The drive vibration system which drives is comprised.

また、検出用振動腕３２ａ，３２ｂのそれぞれの先端部には、重り部３２ｃ，３２ｄが形成され、駆動用振動腕３４ａ，３４ｂ，３５ａ，３５ｂのそれぞれの先端部には、重り部３４ｃ，３４ｄ，３５ｃ，３５ｄが形成されている。
これにより、振動ジャイロ素子３０は、小型化および角速度の検出感度の向上が図られている。 Further, weight portions 32c and 32d are formed at the respective distal end portions of the detection vibrating arms 32a and 32b, and weight portions 34c and 34d are formed at the respective distal end portions of the drive vibrating arms 34a, 34b, 35a and 35b. , 35c, 35d are formed.
Thereby, the vibration gyro element 30 is miniaturized and the detection sensitivity of the angular velocity is improved.

振動ジャイロ素子３０は、平面視において、ＩＣチップ２０Ａ，２０Ｂと重なるようにＩＣチップ２０Ａ，２０Ｂの能動面２１側に配置されている。
なお、振動ジャイロ素子３０は、基部３１、検出用振動腕３２ａ，３２ｂ、駆動用振動腕３４ａ，３４ｂ，３５ａ，３５ｂを含む平板の表裏面を主面とする。本実施形態では、外部と電気的に接続される面を主面３０ａとし、主面３０ａの反対側の面を主面３０ｂとする。 The vibration gyro element 30 is disposed on the active surface 21 side of the IC chips 20A and 20B so as to overlap the IC chips 20A and 20B in plan view.
Note that the vibrating gyro element 30 has the main surface of the front and back surfaces of a flat plate including the base 31, the detection vibrating arms 32a and 32b, and the driving vibrating arms 34a, 34b, 35a, and 35b. In this embodiment, a surface electrically connected to the outside is a main surface 30a, and a surface opposite to the main surface 30a is a main surface 30b.

振動ジャイロ素子３０の基部３１の主面３０ａには、上記各検出電極、各駆動電極から引き出された６個の接続電極３６が設けられている。
図３に示すように、振動ジャイロ素子３０は、主面３０ａが、ＩＣチップ２０Ａ，２０Ｂの能動面２１に沿う（略平行になる）ようにして、各接続電極３６がＩＣチップ２０Ａ，２０Ｂの各接続端子２２に取り付けられている（電気的及び機械的に接続されている）。 On the main surface 30 a of the base 31 of the vibration gyro element 30, six connection electrodes 36 drawn from the detection electrodes and the drive electrodes are provided.
As shown in FIG. 3, the vibrating gyro element 30 has the main surface 30a along the active surface 21 of the IC chips 20A and 20B (substantially parallel), and the connection electrodes 36 of the IC chips 20A and 20B. Attached to each connection terminal 22 (electrically and mechanically connected).

ここで、振動ジャイロ素子３０の動作について説明する。
図５、図６は、振動ジャイロ素子の動作を説明する模式平面図である。図５は、駆動振動状態を示す模式平面図であり、図６（ａ）、図６（ｂ）は、角速度が加わった状態における検出振動状態を示す模式平面図である。
なお、図５、図６において、振動状態を簡易に表現するために、各振動腕、各連結腕は線で表してある。 Here, the operation of the vibrating gyro element 30 will be described.
5 and 6 are schematic plan views for explaining the operation of the vibrating gyro element. FIG. 5 is a schematic plan view showing a driving vibration state, and FIGS. 6A and 6B are schematic plan views showing a detection vibration state in a state where an angular velocity is applied.
In FIGS. 5 and 6, the vibrating arms and the connecting arms are represented by lines in order to simply express the vibration state.

図５において、振動ジャイロ素子３０の駆動振動状態を説明する。
まず、ＩＣチップ２０Ａ，２０Ｂの集積回路（駆動回路）から駆動信号が印加されることにより、振動ジャイロ素子３０は角速度が加わらない状態において、駆動用振動腕３４ａ，３４ｂ，３５ａ，３５ｂが矢印Ｅで示す方向に屈曲振動を行う。この屈曲振動は、実線で示す振動姿態と２点鎖線で示す振動姿態とを所定の周波数で繰り返している。 In FIG. 5, the drive vibration state of the vibration gyro element 30 will be described.
First, when a driving signal is applied from the integrated circuits (driving circuits) of the IC chips 20A and 20B, the vibrating gyro element 30 is not subjected to an angular velocity, and the driving vibrating arms 34a, 34b, 35a, and 35b are indicated by an arrow E. Bending vibration is performed in the direction indicated by. In this bending vibration, a vibration state indicated by a solid line and a vibration state indicated by a two-dot chain line are repeated at a predetermined frequency.

次に、この駆動振動を行っている状態で、振動ジャイロ素子３０にＺ軸回りの角速度ωが加わると、振動ジャイロ素子３０は、図６に示すような振動を行う。
まず、図６（ａ）に示すように、駆動振動系を構成する駆動用振動腕３４ａ，３４ｂ，３５ａ，３５ｂ及び連結腕３３ａ，３３ｂには、矢印Ｆ方向のコリオリ力が働く。また同時に、検出用振動腕３２ａ，３２ｂは、矢印Ｆ方向のコリオリ力に呼応して、矢印Ｈ方向に変形する。 Next, when an angular velocity ω about the Z-axis is applied to the vibrating gyro element 30 in a state where this driving vibration is performed, the vibrating gyro element 30 performs vibration as shown in FIG.
First, as shown in FIG. 6A, the Coriolis force in the direction of arrow F acts on the drive vibrating arms 34a, 34b, 35a, 35b and the connecting arms 33a, 33b constituting the drive vibration system. At the same time, the detection vibrating arms 32a and 32b are deformed in the arrow H direction in response to the Coriolis force in the arrow F direction.

その後、図６（ｂ）に示すように、駆動用振動腕３４ａ，３４ｂ，３５ａ，３５ｂ及び連結腕３３ａ，３３ｂには、矢印Ｆ’方向に戻る力が働く。また同時に、検出用振動腕３２ａ，３２ｂは、矢印Ｆ’方向の力に呼応して、矢印Ｈ’方向に変形する。
振動ジャイロ素子３０は、この一連の動作を交互に繰り返して新たな振動が励起される。
なお、矢印Ｆ，Ｆ’方向の振動は、重心Ｇに対して周方向の振動である。そして、振動ジャイロ素子３０は、検出用振動腕３２ａ，３２ｂに形成された検出電極が、振動により発生した水晶の歪を検出することでＺ軸回りの角速度ωが求められる。 Thereafter, as shown in FIG. 6 (b), the driving vibrating arms 34a, 34b, 35a, 35b and the connecting arms 33a, 33b are subjected to a force returning in the direction of the arrow F ′. At the same time, the detection vibrating arms 32a and 32b are deformed in the direction of the arrow H 'in response to the force in the direction of the arrow F'.
The vibration gyro element 30 repeats this series of operations alternately to excite new vibration.
The vibrations in the directions of arrows F and F ′ are vibrations in the circumferential direction with respect to the center of gravity G. In the vibrating gyro element 30, the detection electrode formed on the vibrating arms 32a and 32b for detection detects the distortion of the crystal generated by the vibration, whereby the angular velocity ω around the Z axis is obtained.

ジャイロセンサー１は、各能動面２１の法線（Ｘ’軸、Ｙ’軸、Ｚ’軸に沿った線）が互いに直交するようにパッケージベース１１上に配置されたＩＣチップ２０Ａ，２０Ｂに、主面３０ａが各能動面２１に沿うように取り付けられた各振動ジャイロ素子３０によって、互いに直交するＸ’軸、Ｙ’軸、Ｚ’軸に沿った３軸を検出軸とした３軸周りの角速度を検出することができる。
このことから、ジャイロセンサー１は、例えば、撮像機器の手ぶれ補正や、ＧＰＳ（Ｇｌｏｂａｌ Ｐｏｓｉｔｉｏｎｉｎｇ Ｓｙｓｔｅｍ）衛星信号を用いた移動体ナビゲーションシステムにおける車両などの姿勢検出、姿勢制御などに用いられる。 The gyro sensor 1 is connected to the IC chips 20A and 20B disposed on the package base 11 so that the normal lines (lines along the X ′ axis, the Y ′ axis, and the Z ′ axis) of each active surface 21 are orthogonal to each other. With each vibrating gyro element 30 attached so that the main surface 30a is along each active surface 21, the three axes along the X ′ axis, the Y ′ axis, and the Z ′ axis that are orthogonal to each other are used as detection axes. Angular velocity can be detected.
Thus, the gyro sensor 1 is used for, for example, camera shake correction of an imaging device, posture detection of a vehicle or the like in a mobile navigation system using a GPS (Global Positioning System) satellite signal, posture control, and the like.

上述したように、本実施形態のジャイロセンサー１は、ＩＣチップ２０Ａが、能動面２１が、パッケージベース１１の主面１４に対して直立するようにパッケージベース１１上に配置され、パッケージベース１１の第１突起電極１５ａ，１６ａとＩＣチップ２０Ａの第２突起電極２３ａとが導電性接着剤を用いた導電性接合部材４０を介して接続されている。
これにより、ジャイロセンサー１は、第１突起電極１５ａ，１６ａと第２突起電極２３ａとに跨る導電性接合部材４０に表面張力が働くこととなる。
この結果、ジャイロセンサー１は、導電性接合部材４０が、第１突起電極１５ａ，１６ａと第２突起電極２３ａとの間に保持され易くなることから、第１突起電極１５ａ，１６ａと第２突起電極２３ａとの導通を確実に取ることができると共に、ＩＣチップ２０Ａを直立状態でパッケージベース１１に確実に固定する（取り付ける）ことができる。
加えて、ジャイロセンサー１は、導電性接合部材４０が周囲に流出することなく第１突起電極１５ａ，１６ａと第２突起電極２３ａとの間に保持されることから、隣り合う電極同士の導電性接合部材４０を介した短絡を回避することができる。 As described above, in the gyro sensor 1 of the present embodiment, the IC chip 20 </ b> A is disposed on the package base 11 so that the active surface 21 stands upright with respect to the main surface 14 of the package base 11. The first protruding electrodes 15a and 16a and the second protruding electrode 23a of the IC chip 20A are connected via a conductive bonding member 40 using a conductive adhesive.
As a result, in the gyro sensor 1, surface tension acts on the conductive bonding member 40 straddling the first protruding electrodes 15a and 16a and the second protruding electrode 23a.
As a result, in the gyro sensor 1, since the conductive bonding member 40 is easily held between the first protruding electrodes 15a and 16a and the second protruding electrode 23a, the first protruding electrodes 15a and 16a and the second protrusion Conductivity with the electrode 23a can be reliably obtained, and the IC chip 20A can be reliably fixed (attached) to the package base 11 in an upright state.
In addition, since the gyro sensor 1 is held between the first protruding electrodes 15a and 16a and the second protruding electrode 23a without the conductive bonding member 40 flowing out to the surroundings, the conductivity of adjacent electrodes can be reduced. A short circuit via the joining member 40 can be avoided.

ジャイロセンサー１は、上記構成を図８に示す従来（特許文献１）のセンサーデバイス１０１に適用することによって、ＩＣチップ１２０を基板としてのパッケージベース１１１に直に直立させることができることとなる。
これにより、ジャイロセンサー１は、上記センサーデバイス１０１の複数のリード１５０が不要となることから、センサーデバイス１０１を小型化（薄型化）し、生産性を向上させることが可能となる。 By applying the above configuration to the conventional (patent document 1) sensor device 101 shown in FIG. 8, the gyro sensor 1 can directly stand the IC chip 120 on the package base 111 as a substrate.
As a result, the gyro sensor 1 does not require the plurality of leads 150 of the sensor device 101, and thus the sensor device 101 can be reduced in size (thinned) and productivity can be improved.

また、ジャイロセンサー１は、パッケージベース１１の第１突起電極１５ａ，１６ａと、ＩＣチップ２０Ａの第２突起電極２３ａとの間に隙間が設けられていることから、第１突起電極１５ａ，１６ａと第２突起電極２３ａとが互いに干渉することなく、パッケージベース１１の主面１４に対するＩＣチップ２０Ａの直立度を調整することができる。   Further, since the gyro sensor 1 has a gap between the first projecting electrodes 15a and 16a of the package base 11 and the second projecting electrode 23a of the IC chip 20A, the gyro sensor 1 and the first projecting electrodes 15a and 16a The uprightness of the IC chip 20A with respect to the main surface 14 of the package base 11 can be adjusted without interfering with the second protruding electrodes 23a.

また、ジャイロセンサー１は、ＩＣチップ２０Ａの第２突起電極２３ａが多段バンプで構成されていることから、第２突起電極２３ａの能動面２１からの突出量Ｈ１を、比較的容易に大きくすることができる。   Further, in the gyro sensor 1, since the second protruding electrode 23a of the IC chip 20A is composed of multistage bumps, the protruding amount H1 of the second protruding electrode 23a from the active surface 21 can be relatively easily increased. Can do.

また、図２に示すように、ジャイロセンサー１は、ＩＣチップ２０Ａの能動面２１側に振動ジャイロ素子３０が配置され、第２突起電極２３ａの能動面２１からの突出量Ｈ１が振動ジャイロ素子３０の能動面２１からの突出量Ｈ２よりも大きい。
このことから、ジャイロセンサー１は、図２の紙面上方からディスペンサーなどの塗布装置を用いて、導電性接合部材４０を振動ジャイロ素子３０と干渉することなく、第１突起電極１５ａ，１６ａ及び第２突起電極２３ａに塗布することができる。 Further, as shown in FIG. 2, in the gyro sensor 1, the vibration gyro element 30 is disposed on the active surface 21 side of the IC chip 20A, and the protrusion amount H1 of the second protruding electrode 23a from the active surface 21 is the vibration gyro element 30. The amount of protrusion H2 from the active surface 21 is larger.
Therefore, the gyro sensor 1 uses the coating device such as a dispenser from the upper side of FIG. 2 without interfering the conductive bonding member 40 with the vibrating gyro element 30 and the second protruding electrodes 15a, 16a and second. It can apply | coat to the protruding electrode 23a.

なお、図７の模式要部拡大断面図に示すように、第２突起電極２３ａは、第２接続端子２３に金（Ａｕ）、銅（Ｃｕ）などの金属ワイヤーが、ループ状（略Ｕ字状）に突出してボンディングされている構成としてもよい。
これによれば、ジャイロセンサー１は、第２突起電極２３ａがループ状の金属ワイヤーで構成されていることから、第２突起電極２３ａの突出量Ｈ１を、比較的容易に大きくすることができる。 As shown in the enlarged schematic cross-sectional view of the main part of FIG. 7, the second protruding electrode 23a has a loop-like (substantially U-shaped) made of a metal wire such as gold (Au) or copper (Cu) on the second connection terminal 23. It is good also as a structure which protrudes in the shape and is bonded.
According to this, the gyro sensor 1 can relatively easily increase the protruding amount H1 of the second protruding electrode 23a because the second protruding electrode 23a is formed of a loop-shaped metal wire.

なお、ＩＣチップ２０Ｂの第２接続端子２３と、パッケージベース１１の内部端子１７との電気的な接続は、金属ワイヤー４１に代えて、可撓性を有するフレキシブル配線基板などを用いてもよい。
なお、ジャイロセンサー１は、ＩＣチップ２０Ｂ、またはＩＣチップ２０Ｂ及びＩＣチップ２０Ａの１つを除去して、３軸ではなく２軸または１軸の角速度検出に対応した構成としてもよい。
また、第２突起電極２３ａは、多段バンプによる構成ではなく、通常の（一段の）バンプ構成としてもよい。 The electrical connection between the second connection terminal 23 of the IC chip 20B and the internal terminal 17 of the package base 11 may use a flexible wiring board having flexibility instead of the metal wire 41.
Note that the gyro sensor 1 may have a configuration corresponding to the detection of the angular velocity of two axes or one axis instead of three axes by removing one of the IC chip 20B or the IC chip 20B and the IC chip 20A.
In addition, the second protruding electrode 23a may have a normal (single-stage) bump configuration instead of a multi-stage bump configuration.

また、振動ジャイロ素子３０は、基部３１から各振動腕間（例えば、検出用振動腕３２ａと駆動用振動腕３４ａとの間など）を通って概ねＹ軸に沿って延伸された複数の支持腕と、複数の支持腕の先端部に跨って設けられた支持部とを備え、支持部に接続電極３６が設けられている構成としてもよい。
これによれば、振動ジャイロ素子３０は、誤検出の原因となる機械的衝撃が加わった際に、支持腕が撓みや屈曲などの変形をすることによって、その機械的衝撃を吸収する機能を有する。
これにより、振動ジャイロ素子３０は、誤検出の原因となる機械的衝撃が、駆動用振動腕３４ａ，３４ｂ，３５ａ，３５ｂや、検出用振動腕３２ａ，３２ｂへ伝わることを抑制できる。この結果、ジャイロセンサー１は、角速度の検出精度を向上させることが可能となる。 In addition, the vibrating gyro element 30 includes a plurality of supporting arms that extend from the base portion 31 between the vibrating arms (for example, between the detecting vibrating arm 32a and the driving vibrating arm 34a), generally along the Y axis. And a support portion provided across the tip portions of the plurality of support arms, and the connection electrode 36 may be provided on the support portion.
According to this, the vibration gyro element 30 has a function of absorbing the mechanical shock by deformation of the support arm such as bending or bending when a mechanical shock that causes erroneous detection is applied. .
As a result, the vibration gyro element 30 can suppress transmission of mechanical shocks that cause erroneous detection to the drive vibration arms 34a, 34b, 35a, 35b and the detection vibration arms 32a, 32b. As a result, the gyro sensor 1 can improve the angular velocity detection accuracy.

なお、上記実施形態では、振動ジャイロ素子３０の基材を水晶としたが、これに限定するものではなく、例えば、タンタル酸リチウム（ＬｉＴａＯ3）、四ホウ酸リチウム（Ｌｉ2Ｂ4Ｏ7）、ニオブ酸リチウム（ＬｉＮｂＯ3）、チタン酸ジルコン酸鉛（ＰＺＴ）、酸化亜鉛（ＺｎＯ）、窒化アルミニウム（ＡｌＮ）などの圧電体、またはシリコン（Ｓｉ）などの半導体であってもよい。 In the above embodiment, the base material of the vibrating gyro element 30 is quartz. However, the present invention is not limited to this. For example, lithium tantalate (LiTaO 3 ), lithium tetraborate (Li 2 B 4 O 7 ) Further, it may be a piezoelectric body such as lithium niobate (LiNbO 3 ), lead zirconate titanate (PZT), zinc oxide (ZnO), or aluminum nitride (AlN), or a semiconductor such as silicon (Si).

また、振動ジャイロ素子３０は、ダブルＴ型以外にも、二脚音叉、三脚音叉、Ｈ型音叉、くし歯型、直交型、角柱型など、種々のジャイロ素子（センサー素子）を用いることが可能である。
また、ジャイロ素子は振動型以外のものであってもよい。
また、振動ジャイロ素子３０の振動の駆動方法や検出方法は、圧電体の圧電効果を用いた圧電型によるものの他に、クーロン力を利用した静電型によるものや、磁力を利用したローレンツ型によるものなどであってもよい。
また、センサー素子の検出軸（センシング軸）は、センサー素子の主面に直交する軸のほかに、センサー素子の主面に平行な軸であってもよい。 In addition to the double T type, the vibrating gyro element 30 can use various gyro elements (sensor elements) such as a bipod tuning fork, a tripod tuning fork, an H type tuning fork, a comb type, an orthogonal type, and a prismatic type. It is.
The gyro element may be other than the vibration type.
In addition to the piezoelectric type using the piezoelectric effect of the piezoelectric body, the driving method and the detecting method of the vibration gyro element 30 are based on the electrostatic type using the Coulomb force and the Lorentz type using the magnetic force. It may be a thing.
Further, the detection axis (sensing axis) of the sensor element may be an axis parallel to the main surface of the sensor element in addition to the axis orthogonal to the main surface of the sensor element.

また、上記実施形態では、センサー素子として振動ジャイロ素子３０を例に挙げたが、これに限定するものではなく、例えば、加速度に反応する加速度感知素子、圧力に反応する圧力感知素子、重さに反応する重量感知素子などでもよい。
これにより、センサーデバイスとしては、上記実施形態のジャイロセンサー１に限定されるものではなく、センサー素子として上記加速度感知素子を備えた加速度センサー、圧力感知素子を備えた圧力センサー、重量感知素子を備えた重量センサーなどでもよい。 In the above embodiment, the vibration gyro element 30 is taken as an example of the sensor element. However, the present invention is not limited to this. For example, the acceleration sensing element that reacts to acceleration, the pressure sensing element that reacts to pressure, It may be a weight sensing element that reacts.
As a result, the sensor device is not limited to the gyro sensor 1 of the above embodiment, but includes an acceleration sensor including the acceleration sensing element as a sensor element, a pressure sensor including a pressure sensing element, and a weight sensing element. A weight sensor may be used.

（電子機器）
上記ジャイロセンサー１、加速度センサー、圧力センサー、重量センサーなどのセンサーデバイスは、デジタルスチールカメラ、ビデオカメラ、ナビゲーション装置、車体姿勢検出装置、ポインティングデバイス、ゲームコントローラー、携帯電話、ヘッドマウントディスプレイなどの電子機器に、センシング機能を備えたデバイスとして好適に用いることができ、いずれの場合にも上記実施形態で説明した効果が反映された電子機器を提供することができる。 (Electronics)
Sensor devices such as the gyro sensor 1, acceleration sensor, pressure sensor, and weight sensor are electronic devices such as a digital still camera, a video camera, a navigation device, a vehicle body posture detection device, a pointing device, a game controller, a mobile phone, and a head-mounted display. In addition, it can be suitably used as a device having a sensing function, and in any case, it is possible to provide an electronic device in which the effects described in the above embodiments are reflected.

１…半導体装置としてのジャイロセンサー、１０…パッケージ、１１…基板としてのパッケージベース、１２…凹部、１３…リッド、１４…主面、１５，１６…第１接続端子としての内部端子、１５ａ，１６ａ…第１突起電極、１７…内部端子、１８…底面、１９…外部端子、２０Ａ，２０Ｂ…ＩＣチップ、２１…第１面としての能動面、２２…接続端子、２３…第２接続端子、２３ａ…第２突起電極、２４…第１の電極、２５…応力緩和層、２６…第１絶縁層、２６ａ…開口部、２７…配線、２８…第２絶縁層、２８ａ，２８ｂ…開口部、２９…非能動面、３０…センサー素子としての振動ジャイロ素子、３０ａ，３０ｂ…主面、３１…基部、３２ａ，３２ｂ…検出用振動腕、３２ｃ，３２ｄ…重り部、３３ａ，３３ｂ…連結腕、３４ａ，３４ｂ，３５ａ，３５ｂ…駆動用振動腕、３４ｃ，３４ｄ，３５ｃ，３５ｄ…重り部、３６…接続電極、１０１…センサーデバイス、１１０…パッケージ、１１１…パッケージベース、１１３…リッド、１１５…端子、１２０…ＩＣチップ、１３０…センサー素子、１５０…リード。   DESCRIPTION OF SYMBOLS 1 ... Gyro sensor as a semiconductor device, 10 ... Package, 11 ... Package base as a board | substrate, 12 ... Recessed part, 13 ... Lid, 14 ... Main surface, 15, 16 ... Internal terminal as 1st connection terminal, 15a, 16a DESCRIPTION OF SYMBOLS 1st protruding electrode, 17 ... Internal terminal, 18 ... Bottom surface, 19 ... External terminal, 20A, 20B ... IC chip, 21 ... Active surface as 1st surface, 22 ... Connection terminal, 23 ... 2nd connection terminal, 23a 2nd protruding electrode, 24 ... 1st electrode, 25 ... Stress relaxation layer, 26 ... 1st insulating layer, 26a ... Opening, 27 ... Wiring, 28 ... 2nd insulating layer, 28a, 28b ... Opening, 29 ... non-active surface, 30 ... vibrating gyro element as sensor element, 30a, 30b ... main surface, 31 ... base, 32a, 32b ... detection vibrating arm, 32c, 32d ... weight, 33a, 33b ... connecting arm, 34a , 4b, 35a, 35b ... driving vibration arm, 34c, 34d, 35c, 35d ... weight, 36 ... connection electrode, 101 ... sensor device, 110 ... package, 111 ... package base, 113 ... lid, 115 ... terminal, 120 ... IC chip, 130 ... sensor element, 150 ... lead.

Claims (6)

凸状の第１突起電極が設けられた第１接続端子を主面に有する基板と、
凸状の第２突起電極が設けられた第２接続端子を第１面側に有するＩＣチップと、を備え、
前記ＩＣチップは、前記第１面が前記基板の前記主面に対して直立し、平面視で前記第１突起電極と前記第２突起電極との少なくとも一部が互いに重なるように前記基板上に配置され、
前記第１突起電極と前記第２突起電極とが、導電性接合部材を介して互いに接続されていることを特徴とする半導体装置。 A substrate having a first connection terminal provided with a convex first protruding electrode on the main surface;
An IC chip having a second connection terminal provided with a convex second protruding electrode on the first surface side, and
The IC chip is disposed on the substrate such that the first surface stands upright with respect to the main surface of the substrate and at least a part of the first protruding electrode and the second protruding electrode overlap each other in plan view. Arranged,
The semiconductor device, wherein the first protruding electrode and the second protruding electrode are connected to each other through a conductive bonding member. 請求項１に記載の半導体装置において、
前記第１突起電極と前記第２突起電極との間には、隙間が設けられていることを特徴とする半導体装置。 The semiconductor device according to claim 1,
A semiconductor device, wherein a gap is provided between the first protruding electrode and the second protruding electrode. 請求項１または請求項２に記載の半導体装置において、
前記第２突起電極は、ループ状の金属ワイヤーで構成されていることを特徴とする半導体装置。 The semiconductor device according to claim 1 or 2,
The semiconductor device according to claim 1, wherein the second protruding electrode is formed of a loop-shaped metal wire. 請求項１または請求項２に記載の半導体装置において、
前記第２突起電極は、多段バンプで構成されていることを特徴とする半導体装置。 The semiconductor device according to claim 1 or 2,
The semiconductor device according to claim 2, wherein the second protruding electrode is composed of a multi-stage bump. 請求項１ないし請求項４のいずれか一項に記載の半導体装置において、
物理量を検出するセンサー素子を更に備え、
前記ＩＣチップの前記第１面側には、前記センサー素子が配置され、
前記第２突起電極は、前記第１面からの突出量が前記センサー素子における前記第１面からの突出量よりも大きいことを特徴とする半導体装置。 5. The semiconductor device according to claim 1, wherein:
It further includes a sensor element that detects a physical quantity,
The sensor element is disposed on the first surface side of the IC chip,
The semiconductor device according to claim 2, wherein the second protruding electrode has a protruding amount from the first surface larger than a protruding amount from the first surface of the sensor element. 請求項１ないし請求項５のいずれか一項に記載の半導体装置を備えていることを特徴とする電子機器。   An electronic apparatus comprising the semiconductor device according to claim 1.
JP2012026087A 2012-02-09 2012-02-09 Semiconductor device and electronic apparatus Pending JP2013164279A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190041211A1 (en) * 2016-03-22 2019-02-07 Panasonic Intellectual Property Management Co., Ltd. Sensor
FR3126257A1 (en) * 2021-08-17 2023-02-24 Stmicroelectronics (Grenoble 2) Sas Connector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190041211A1 (en) * 2016-03-22 2019-02-07 Panasonic Intellectual Property Management Co., Ltd. Sensor
FR3126257A1 (en) * 2021-08-17 2023-02-24 Stmicroelectronics (Grenoble 2) Sas Connector

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