JP2013105867A - Substrate holder, regeneration method of substrate holder, and manufacturing method of substrate holder - Google Patents

Substrate holder, regeneration method of substrate holder, and manufacturing method of substrate holder Download PDF

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JP2013105867A
JP2013105867A JP2011248267A JP2011248267A JP2013105867A JP 2013105867 A JP2013105867 A JP 2013105867A JP 2011248267 A JP2011248267 A JP 2011248267A JP 2011248267 A JP2011248267 A JP 2011248267A JP 2013105867 A JP2013105867 A JP 2013105867A
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temperature
curable resin
substrate holder
support member
seal member
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JP5661597B2 (en
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Takayuki Ishii
貴幸 石井
Takahiro Kitano
高広 北野
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Tokyo Electron Ltd
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PROBLEM TO BE SOLVED: To provide a substrate holder which is easily remanufactured.SOLUTION: A spin chuck 1 attracting and holding a wafer W has: an attraction board 10 having heat resistance that withstands a temperature equal to or higher than a first temperature; a sealing member 11 continuously provided along an outer peripheral part on an upper surface of the attraction board 10; and a supporting member 12 provided on the upper surface of the attraction board 10 which is located at the inner side of the sealing member 11. The sealing member 11 and the support member 12 are formed by an ultraviolet hardening resin carbonizing at a temperature equal to or higher than a second temperature that is lower than the first temperature.

Description

本発明は、基板を保持する基板保持体、当該基板保持体の再生方法及び製造方法に関する。   The present invention relates to a substrate holder that holds a substrate, a method for regenerating the substrate holder, and a manufacturing method thereof.

例えば半導体デバイスの製造プロセスにおけるフォトリソグラフィー工程では、例えば半導体ウェハ(以下、「ウェハ」という。)上にレジスト液を塗布しレジスト膜を形成するレジスト塗布処理、レジスト膜を所定のパターンに露光する露光処理、露光されたレジスト膜を現像する現像処理などが順次行われ、ウェハ上に所定のレジストパターンが形成されている。   For example, in a photolithography process in a semiconductor device manufacturing process, for example, a resist coating process for applying a resist solution on a semiconductor wafer (hereinafter referred to as “wafer”) to form a resist film, and exposure for exposing the resist film to a predetermined pattern Processing, development processing for developing the exposed resist film, and the like are sequentially performed, and a predetermined resist pattern is formed on the wafer.

上述したレジスト塗布処理では、例えばスピンチャックによりウェハを吸着保持した状態で、例えば塗布ノズルからウェハ上にレジスト液を供給し、次いでウェハを回転させて、レジスト液をウェハ表面に拡散させる方法、いわゆるスピンコーティング法が広く用いられている。   In the resist coating process described above, for example, a method in which a resist solution is supplied onto the wafer from, for example, a coating nozzle while the wafer is sucked and held by a spin chuck, and then the wafer is rotated to diffuse the resist solution to the wafer surface, so-called The spin coating method is widely used.

上述のスピンコーティング法ではウェハを高速回転させるので、ウェハを吸着保持するスピンチャックには、高い負圧吸着力が求められる。そのため、例えば図17に示すように、従来のスピンチャック100では、略円盤状の吸着盤101の上面の外周縁部に、上に向かって凸状のシール部102を円環状に連続して設け、当該シール部102の内周側に、ウェハWを支持する、上に向かって凸状の支持部103を、シール部102に同心円状に設けている。   In the above-described spin coating method, the wafer is rotated at a high speed. Therefore, a high negative pressure adsorption force is required for the spin chuck that adsorbs and holds the wafer. Therefore, for example, as shown in FIG. 17, in the conventional spin chuck 100, an upward convex seal portion 102 is continuously provided in an annular shape on the outer peripheral edge portion of the upper surface of the substantially disc-shaped suction disc 101. On the inner peripheral side of the seal portion 102, a support portion 103 that protrudes upward and supports the wafer W is provided concentrically on the seal portion 102.

そして、シール部102上面の高さを支持部103上面の高さよりも高く形成することで、ウェハWをシール部102及び支持部103上に載置した状態で吸着盤101の内部に形成された吸気孔(図示せず)から排気してウェハWを吸着保持する際に、ウェハWを吸着する力がシール部102にシール荷重として作用する。その結果、スピンチャック100は、高い負圧吸着力でウェハWを吸着保持できる(特許文献1)。   Then, the height of the upper surface of the seal portion 102 is formed to be higher than the height of the upper surface of the support portion 103, so that the wafer W is formed inside the suction plate 101 while being placed on the seal portion 102 and the support portion 103. When the wafer W is sucked and held from an intake hole (not shown), a force for sucking the wafer W acts on the seal portion 102 as a seal load. As a result, the spin chuck 100 can suck and hold the wafer W with a high negative pressure suction force (Patent Document 1).

特開2007−19317号公報JP 2007-19317 A

ところで、上述のスピンチャック100は、例えばPEEK(ポリエーテルエーテルケトン)などで一体成形されている。そして、シール部102のシール性能を高めるため、成形後にシール部102の上端面を研磨して鏡面状に仕上げる作業などが行われる。そのため、スピンチャック100の製作に時間がかかると共に、製作コストも高くなってしまう。   By the way, the above-described spin chuck 100 is integrally formed of, for example, PEEK (polyether ether ketone). And in order to improve the sealing performance of the seal part 102, the operation | work etc. which grind | polish the upper end surface of the seal part 102 after shaping | molding, and make it mirror-like are performed. Therefore, it takes time to manufacture the spin chuck 100, and the manufacturing cost increases.

しかしながら、スピンチャック100のシール部102や支持部103は、使用するにつれて磨耗するため、所定の回数使用した後にスピンチャック100を交換する必要がある。そのため、その都度スピンチャック100を製作する必要があり、スピンチャック100を用いて塗布処理を行う、例えば塗布処理装置においては当該塗布処理装置の維持コストが高くなってしまうという問題があった。   However, since the seal portion 102 and the support portion 103 of the spin chuck 100 are worn as they are used, the spin chuck 100 needs to be replaced after being used a predetermined number of times. Therefore, it is necessary to manufacture the spin chuck 100 each time. For example, in a coating processing apparatus that performs coating processing using the spin chuck 100, there is a problem that the maintenance cost of the coating processing apparatus becomes high.

そこで、本発明者らは、使用済みのスピンチャック100を基にして新たなスピンチャック100を容易に再製作できるようにすれば、スピンチャック100の製作コストや製作時間を低減することができる点に着目した。具体的には、シール部102や支持部103を吸着盤101と一体に形成するのではなく、例えば吸着盤101の材質と、シール部102及び支持部103の材質とを異なったものとし、シール部102や支持部103が磨耗した際に、当該シール部102や支持部103のみを容易に除去できるようにするのである。この場合、シール部102と支持部103を除去した吸着盤101に、再度シール部102と支持部103を形成すれば、当該吸着盤101を基にして新たなスピンチャック100を容易に製作することができる。   Therefore, the present inventors can reduce the manufacturing cost and manufacturing time of the spin chuck 100 by making it possible to easily remanufacture a new spin chuck 100 based on the used spin chuck 100. Focused on. Specifically, the seal portion 102 and the support portion 103 are not formed integrally with the suction plate 101, but the material of the suction plate 101 is different from the material of the seal portion 102 and the support portion 103, for example. When the part 102 and the support part 103 are worn, only the seal part 102 and the support part 103 can be easily removed. In this case, if the seal portion 102 and the support portion 103 are formed again on the suction plate 101 from which the seal portion 102 and the support portion 103 have been removed, a new spin chuck 100 can be easily manufactured based on the suction plate 101. Can do.

本発明は、かかる点に鑑みてなされたものであり、再製作が容易な基板保持体を提供することを目的とする。   The present invention has been made in view of such points, and an object thereof is to provide a substrate holder that can be easily remanufactured.

前記の目的を達成するため、本発明は、基板を吸着保持する基板保持体であって、第1の温度以上の耐熱性を有する吸着盤と、前記吸着盤上面の外周縁部に沿って連続して設けられたシール部材と、前記吸着盤上面であって前記シール部材の内側に設けられた支持部材と、を有し、前記シール部材と前記支持部材は、前記第1の温度より低い第2の温度で炭化する材料により構成されていることを特徴としている。   In order to achieve the above object, the present invention is a substrate holder for adsorbing and holding a substrate, and is continuous along an adsorbing plate having heat resistance equal to or higher than a first temperature and an outer peripheral edge of the upper surface of the adsorbing plate. And a support member provided on the suction plate upper surface and inside the seal member, wherein the seal member and the support member are lower than the first temperature. It is characterized by being composed of a material that carbonizes at a temperature of 2.

本発明によれば、シール部材と支持部材が、吸着盤の耐熱温度である前記第1の温度よりも低い第2の温度で炭化する材料で形成されているので、例えば繰り返し使用することによりシール部材と支持部材が磨耗した場合に、シール部材と支持部材を第1の温度より低く且つ第2の温度以上で加熱することで、シール部材と支持部材を炭化して容易に除去することができる。そして、シール部材と支持部材を除去した吸着盤に、再度シール部材と支持部材を形成すれば、この吸着盤を基にして新たな基板保持体を容易に製作することができる。その結果、基板保持体の製作コストや製作時間を低減することができる。   According to the present invention, the seal member and the support member are formed of a material that carbonizes at a second temperature lower than the first temperature, which is the heat resistant temperature of the suction disk. When the member and the support member are worn, the seal member and the support member can be carbonized and easily removed by heating the seal member and the support member at a temperature lower than the first temperature and higher than the second temperature. . If the seal member and the support member are formed again on the suction plate from which the seal member and the support member have been removed, a new substrate holder can be easily manufactured based on the suction plate. As a result, the manufacturing cost and manufacturing time of the substrate holder can be reduced.

前記シール部材及び前記支持部材は、紫外線硬化樹脂により形成されていてもよい。   The seal member and the support member may be formed of an ultraviolet curable resin.

前記紫外線硬化樹脂には、ポリエチレンジオシチオフェンを含有させることで導電性が付与されていてもよい。   The ultraviolet curable resin may be provided with electrical conductivity by containing polyethylenediosithiophene.

前記吸着盤はセラミックスにより形成されていてもよい。   The suction disk may be made of ceramics.

前記吸着盤は、導電性部材を含有させることで導電性が付与されたアルミナ、炭化シリコン又は窒化シリコンのいずれかであってもよい。   The suction disk may be any of alumina, silicon carbide, or silicon nitride provided with conductivity by including a conductive member.

前記第1の温度は1000℃であってもよく、前記第2の温度は400℃〜600℃であってもよい。   The first temperature may be 1000 ° C., and the second temperature may be 400 ° C. to 600 ° C.

前記吸着盤には、当該吸着盤を回転させる回転軸が設けられ、前記吸着盤と前記回転軸とは、前記第1の温度より低い第3の温度以上で溶融する接着剤により接合されていてもよい。   The suction disk is provided with a rotation shaft for rotating the suction disk, and the suction disk and the rotation shaft are joined by an adhesive that melts at a third temperature lower than the first temperature. Also good.

前記第3の温度は、150℃〜200℃であってもよい。   The third temperature may be 150 ° C. to 200 ° C.

前記シール部材及び前記支持部材の上端部は、その断面形状が球面状であってもよい。   The upper end portions of the seal member and the support member may have a spherical cross section.

前記シール部材と前記支持部材は、硫酸と過酸化水素水の混合液により除去可能な紫外線硬化樹脂により形成され、前記吸着盤は、第1の温度以上の耐熱性に代えて、前記硫酸と過酸化水素水の混合液への耐性を有していてもよい。   The sealing member and the support member are formed of an ultraviolet curable resin that can be removed by a mixed solution of sulfuric acid and hydrogen peroxide solution, and the adsorption plate is replaced with sulfuric acid and a hydrogen peroxide instead of heat resistance at a first temperature or higher. You may have the tolerance to the liquid mixture of hydrogen oxide water.

前記硫酸と過酸化水素水の混合液は、硫酸と過酸化水素水の配合率が6:1であってもよい。   The mixed solution of sulfuric acid and hydrogen peroxide solution may have a mixing ratio of sulfuric acid and hydrogen peroxide solution of 6: 1.

別な観点による本発明によれば、基板を吸着保持する前記基板保持体の再生方法であって、前記基板保持体は、第1の温度以上の耐熱性を有する吸着盤と、前記吸着盤上面の外周縁部に沿って連続して設けられたシール部材と、前記吸着盤の上面であって前記シール部材の内側に設けられた支持部材と、を有し、且つ前記シール部材と前記支持部材は、前記第1の温度より低い第2の温度以上で炭化する材料により形成され、前記シール部材及び前記支持部材を、前記第1の温度より低く且つ前記第2の温度以上で加熱することで、前記シール部材と前記支持部材を炭化して除去し、その後、前記シール部材と前記支持部材が除去された吸着盤の上面の外周縁部に沿って連続して液体状の紫外線硬化樹脂を塗布し、前記吸着盤の上面であって前記外周縁部に塗布された紫外線硬化樹脂の内側に前記液体状の紫外線硬化樹脂を塗布し、その後、前記吸着盤上面に塗布された紫外線硬化樹脂に紫外線を照射して当該紫外線硬化樹脂を硬化させることを特徴としている。   According to another aspect of the present invention, there is provided a method for regenerating the substrate holder for adsorbing and holding a substrate, wherein the substrate holder includes an adsorber having heat resistance equal to or higher than a first temperature, and an upper surface of the adsorber. A sealing member provided continuously along the outer peripheral edge of the suction plate, and a support member provided on the upper surface of the suction plate and inside the sealing member, and the sealing member and the support member Is formed of a material that carbonizes at a second temperature lower than the first temperature, and heats the seal member and the support member at a temperature lower than the first temperature and higher than the second temperature. The seal member and the support member are carbonized and removed, and then a liquid UV curable resin is continuously applied along the outer peripheral edge of the upper surface of the suction plate from which the seal member and the support member have been removed. And the upper surface of the suction plate The liquid UV curable resin is applied to the inside of the UV curable resin applied to the outer peripheral edge, and then the ultraviolet curable resin applied to the upper surface of the suction disk is irradiated with ultraviolet rays to cure the UV curable resin. It is characterized by letting.

前記シール部材と前記支持部材は、硫酸と過酸化水素水の混合液により除去可能な紫外線硬化樹脂により形成され、前記吸着盤は、第1の温度以上の耐熱性に代えて、前記硫酸と過酸化水素水の混合液への耐性を有し、前記シール部材及び前記支持部材の前記吸着盤からの除去は、前記第1の温度より低く且つ前記第2の温度以上での加熱に代えて、硫酸と過酸化水素水の混合液に浸漬させることにより行われてもよい。   The sealing member and the support member are formed of an ultraviolet curable resin that can be removed by a mixed solution of sulfuric acid and hydrogen peroxide solution, and the adsorption plate is replaced with sulfuric acid and a hydrogen peroxide instead of heat resistance at a first temperature or higher. It has resistance to a mixed solution of hydrogen oxide water, and the removal of the seal member and the support member from the adsorption plate is replaced with heating at a temperature lower than the first temperature and higher than the second temperature, It may be performed by immersing in a mixed solution of sulfuric acid and hydrogen peroxide solution.

前記硫酸と過酸化水素水の混合液は、硫酸と過酸化水素水の配合率が6:1であってもよい。   The mixed solution of sulfuric acid and hydrogen peroxide solution may have a mixing ratio of sulfuric acid and hydrogen peroxide solution of 6: 1.

また、別な観点による本発明によれば、前記基板保持体の製造方法であって、前記吸着盤上面の外周縁部に沿って連続して液体状の紫外線硬化樹脂を塗布し、前記吸着盤の上面であって前記外周縁部に塗布された紫外線硬化樹脂の内側に前記液体状の紫外線硬化樹脂を塗布し、その後、前記吸着盤上面に塗布された紫外線硬化樹脂に紫外線を照射して当該紫外線硬化樹脂を硬化させることを特徴としている。   According to another aspect of the present invention, there is provided a method for manufacturing the substrate holder, wherein a liquid ultraviolet curable resin is continuously applied along an outer peripheral edge of the upper surface of the suction disk, and the suction disk is The liquid UV curable resin is applied to the inner surface of the UV curable resin applied to the outer peripheral edge, and then the ultraviolet curable resin applied to the upper surface of the suction plate is irradiated with ultraviolet rays. It is characterized by curing an ultraviolet curable resin.

本発明によれば、再製作が容易な基板保持体を提供することができる。   According to the present invention, it is possible to provide a substrate holder that can be easily remanufactured.

本実施の形態にかかるスピンチャックの構成の概略を示す、縦断面図である。It is a longitudinal cross-sectional view which shows the outline of a structure of the spin chuck concerning this Embodiment. 本実施の形態にかかるスピンチャックの構成の概略を示す、平面図である。It is a top view which shows the outline of a structure of the spin chuck concerning this Embodiment. 吸着盤から回転軸を取り外す様子を示す説明図である。It is explanatory drawing which shows a mode that a rotating shaft is removed from a suction disk. シール部材及び支持部材を加熱して炭化し、吸着盤から除去した状態を示す説明図である。It is explanatory drawing which shows the state which heated and carbonized the sealing member and the supporting member, and removed from the suction disk. 吸着盤にレジストパターンを形成した状態を示す説明図である。It is explanatory drawing which shows the state which formed the resist pattern in the suction disk. 吸着盤に離型剤を塗布した状態を示す説明図である。It is explanatory drawing which shows the state which apply | coated the mold release agent to the suction disk. 吸着盤からレジストパターンを除去した状態を示す説明図である。It is explanatory drawing which shows the state which removed the resist pattern from the suction disk. 吸着盤に紫外線硬化樹脂を塗布する様子を示す説明図である。It is explanatory drawing which shows a mode that an ultraviolet curable resin is apply | coated to an adsorption | suction board. 紫外線を照射して紫外線硬化樹脂を硬化させる様子を示す説明図である。It is explanatory drawing which shows a mode that an ultraviolet-ray is irradiated and an ultraviolet curable resin is hardened. 吸着盤に回転軸を接続した状態を示す説明図である。It is explanatory drawing which shows the state which connected the rotating shaft to the suction disk. テンプレートに離型剤と紫外線硬化樹脂を塗布した状態を示す説明図である。It is explanatory drawing which shows the state which apply | coated the mold release agent and the ultraviolet curable resin to the template. 離型剤と紫外線硬化樹脂を塗布したテンプレートを吸着盤10に押し付けた状態を示す説明図である。It is explanatory drawing which shows the state which pressed the template which apply | coated the mold release agent and the ultraviolet curable resin to the suction disk. テンプレートを上昇させ、吸着盤に紫外線硬化樹脂を転写した状態を示す説明図である。It is explanatory drawing which shows the state which raised the template and transferred the ultraviolet curable resin to the suction disk. 従来のスピンチャックを用いて吸着保持したウェハの裏面におけるパーティクルの分布図、及びパーティクルの粒径毎の個数を示すグラフである。It is a graph which shows the distribution diagram of the particle | grains in the back surface of the wafer attracted and held using the conventional spin chuck, and the number for every particle diameter of a particle. 本実施の形態にかかるスピンチャックを用いて吸着保持したウェハの裏面におけるパーティクルの分布図、及びパーティクルの粒径毎の個数を示すグラフである。It is a graph which shows the distribution diagram of the particle | grains in the back surface of the wafer attracted | sucked and held using the spin chuck concerning this Embodiment, and the number for every particle diameter of a particle. 他の実施の形態にかかるスピンチャックの構成の概略を示す、平面図である。It is a top view which shows the outline of a structure of the spin chuck concerning other embodiment. 従来のスピンチャックの構成の概略を示す説明図である。It is explanatory drawing which shows the outline of a structure of the conventional spin chuck.

以下、本発明の実施の形態について説明する。図1は、本実施の形態にかかる基板保持体としてのスピンチャック1の構成の概略を示す平面図である。図2は、スピンチャック1の構成の概略を示す縦断面図である。   Embodiments of the present invention will be described below. FIG. 1 is a plan view schematically showing the configuration of a spin chuck 1 as a substrate holder according to the present embodiment. FIG. 2 is a longitudinal sectional view showing an outline of the configuration of the spin chuck 1.

スピンチャック1は、図1、図2に示すように、所定の厚みを持った略円盤状の吸着盤10を有している。   As shown in FIGS. 1 and 2, the spin chuck 1 has a substantially disk-shaped suction disk 10 having a predetermined thickness.

吸着盤10の材料としては、例えば1000℃以上の耐熱性を有する、例えばアルミナ、炭化シリコン、窒化シリコン等のセラミックスを用いることができる。なお、本実施の形態においては、例えばセラミックスに導電性の添加剤を付与することで、吸着盤10に導電性を付与している。   As a material of the suction disk 10, for example, ceramic having heat resistance of 1000 ° C. or more, such as alumina, silicon carbide, silicon nitride, or the like can be used. In the present embodiment, conductivity is imparted to the suction disk 10 by, for example, imparting a conductive additive to ceramics.

吸着盤10の外周縁部の上面には、当該外周縁部に沿って連続した、円環状のシール部材11が設けられている。   An annular seal member 11 that is continuous along the outer peripheral edge is provided on the upper surface of the outer peripheral edge of the suction disk 10.

吸着盤10の上面であって、シール部材11の内側、即ち吸着盤10上面におけるシール部材に囲まれた領域には、シール部材11に同心円状に、略円環状の支持部材12が複数設けられている。図2に示すように、支持部材12は、例えば平面視において半円環状の部材を所定の間隔あけて配置して構成されている。これにより、後述する排気孔21を介して吸着盤10上面の雰囲気を排気した際に、支持部材12の間を、吸着盤10の直径方向に沿って排気できるようになっている。   A plurality of substantially annular support members 12 are provided concentrically with the seal member 11 in the upper surface of the suction plate 10 and inside the seal member 11, that is, in a region surrounded by the seal member on the upper surface of the suction plate 10. ing. As shown in FIG. 2, the support member 12 is configured, for example, by arranging semi-annular members at a predetermined interval in plan view. Thus, when the atmosphere on the upper surface of the suction plate 10 is exhausted through the exhaust hole 21 described later, the space between the support members 12 can be exhausted along the diameter direction of the suction plate 10.

シール部材11及び支持部材12は、例えば図1に示すように、断面形状が上に凸状の略半円形状に構成されている。そのため、シール部材11及び支持部材12の上端部は、その断面形状が球面状になっている。したがって、スピンチャック1により吸着保持されるウェハWと、シール部材11及び支持部材12とは、平面と球面で接する。そのため、例えばウェハWがシール部材11及び支持部材12と接触した際に、当該ウェハWの裏面が削られにくくなる。   For example, as shown in FIG. 1, the seal member 11 and the support member 12 are formed in a substantially semicircular shape with a cross-sectional shape protruding upward. Therefore, the cross-sectional shape of the upper end portions of the seal member 11 and the support member 12 is spherical. Therefore, the wafer W attracted and held by the spin chuck 1, the seal member 11, and the support member 12 are in contact with a plane and a spherical surface. Therefore, for example, when the wafer W comes into contact with the seal member 11 and the support member 12, the back surface of the wafer W is difficult to be scraped.

シール部材11の内側に隣接して設けられた支持部材12は、その上端部の高さがシール部材11の上端部の高さより低く形成されている。また、各支持部材12は、上端部の高さが、吸着盤10の外周方向から中心方向に向かって順に低くなるように形成されている。なお、シール部材11及び支持部材12の高さHは、例えば0.2mm〜0.5mmである。   The support member 12 provided adjacent to the inner side of the seal member 11 is formed such that the height of the upper end portion thereof is lower than the height of the upper end portion of the seal member 11. Further, each support member 12 is formed such that the height of the upper end portion thereof decreases in order from the outer peripheral direction of the suction cup 10 toward the center direction. The height H of the seal member 11 and the support member 12 is, for example, 0.2 mm to 0.5 mm.

シール部材11及び支持部材12は、例えば紫外線を照射することにより懸架反応が生じて硬化する、紫外線硬化樹脂により形成されている。紫外線硬化樹脂としては、吸着盤10の耐熱温度よりも低い、例えば400℃〜600℃以上で炭化するものが用いられる。また、本実施の形態においては、シール部材11及び支持部材12を形成する紫外線硬化樹脂に、PEDOT(ポリエチレンジオシチオフェン)を含有させることで、シール部材11及び支持部材12に導電性を付与している。   The seal member 11 and the support member 12 are made of, for example, an ultraviolet curable resin that is cured by being subjected to a suspension reaction when irradiated with ultraviolet rays. As the ultraviolet curable resin, a resin that is carbonized at a temperature lower than the heat-resistant temperature of the suction disk 10, for example, 400 ° C. to 600 ° C. or more is used. Moreover, in this Embodiment, electroconductivity is provided to the sealing member 11 and the supporting member 12 by making the ultraviolet curable resin which forms the sealing member 11 and the supporting member 12 contain PEDOT (polyethylenediosithiophene). ing.

図2に示すように、吸着盤10の中心には、当該吸着盤10を厚み方向に貫通する回転軸20が設けられている。回転軸20は、その上端部の高さが、例えば吸着盤10の上面と同じかそれより低くなるように吸着盤10に接続されている。また、回転軸20は、例えば図示しない回転機構に接続されており、当該回転機構により回転軸20を回転させることで、吸着盤10を回転させることができる。   As shown in FIG. 2, a rotation shaft 20 that penetrates the suction plate 10 in the thickness direction is provided at the center of the suction plate 10. The rotary shaft 20 is connected to the suction cup 10 so that the height of the upper end portion thereof is the same as or lower than the upper surface of the suction cup 10, for example. Moreover, the rotating shaft 20 is connected to a rotating mechanism (not shown), for example, and the suction plate 10 can be rotated by rotating the rotating shaft 20 by the rotating mechanism.

回転軸20は、吸着盤10と熱膨張率が同程度で且つ導電性を有する、例えばチタンにより形成されている。また、回転軸20と吸着盤10とは、導電性の接着剤Gにより固定されている。なお、接着剤Gには、例えば上述の紫外線硬化樹脂が炭化する温度よりも低い、例えば150℃〜200℃以上の温度で溶融するものが用いられる。   The rotating shaft 20 is made of, for example, titanium having the same thermal expansion coefficient as the suction disk 10 and having conductivity. The rotating shaft 20 and the suction disk 10 are fixed by a conductive adhesive G. In addition, as the adhesive G, for example, an adhesive that melts at a temperature lower than a temperature at which the above-described ultraviolet curable resin is carbonized, for example, 150 ° C. to 200 ° C. or more is used.

回転軸20の内部には、図示しない排気機構に接続された排気孔21が形成されている。そのため、スピンチャック1の上面、即ちシール部材11及び支持部材12の上面にウェハWを載置した状態で、排気孔21から排気することで、シール部材11、ウェハW及び吸着盤10に囲まれた空間を負圧にし、当該スピンチャック1によりウェハWを吸着保持することができる。   An exhaust hole 21 connected to an exhaust mechanism (not shown) is formed inside the rotary shaft 20. Therefore, the wafer W is placed on the upper surface of the spin chuck 1, that is, the upper surface of the seal member 11 and the support member 12, and is exhausted from the exhaust hole 21, thereby being surrounded by the seal member 11, the wafer W, and the suction plate 10. The wafer W can be sucked and held by the spin chuck 1 while the space is made negative.

そして、例えばレジスト塗布処理などを行う際には、スピンチャック1にウェハWを吸着保持した状態で当該ウェハWの表面にレジスト液を供給する。そして、スピンチャック1を回転させることでレジスト液がウェハWの表面に塗り広げられる。   For example, when a resist coating process is performed, a resist solution is supplied to the surface of the wafer W while the wafer W is sucked and held on the spin chuck 1. Then, the resist solution is spread on the surface of the wafer W by rotating the spin chuck 1.

ところで、ウェハWへの塗布処理などにスピンチャック1を繰り返し用いると、上述のように、スピンチャック1と当該スピンチャック1に吸着保持されるウェハWとの接触により、シール部材11や支持部材12が磨耗してしまう。そうすると、ウェハWとシール部材11の間の気密性が維持できなくなったり、支持部材12によりウェハWを均等に保持できなくなったりするため、スピンチャック1を交換する必要がある。   By the way, when the spin chuck 1 is repeatedly used for the coating process on the wafer W, the seal member 11 and the support member 12 are brought into contact with each other by the contact between the spin chuck 1 and the wafer W attracted and held by the spin chuck 1 as described above. Will wear out. As a result, the airtightness between the wafer W and the seal member 11 cannot be maintained, and the support member 12 cannot hold the wafer W evenly. Therefore, it is necessary to replace the spin chuck 1.

この点について、本実施の形態にかかるスピンチャック1は、紫外線硬化樹脂の炭化温度及び接着剤の溶融温度を、吸着盤10の耐熱温度より低くしているので、シール部材11や支持部材12が磨耗してしまった場合でも、当該シール部材11や支持部材12が磨耗したスピンチャック1を基に、新たなスピンチャック1を容易に再製作することができる。以下、具体的にスピンチャック1の再製作の工程について説明する。図3〜図10は、スピンチャック1の再生工程の概略を示す説明図である。   About this point, since the spin chuck 1 concerning this Embodiment makes the carbonization temperature of an ultraviolet curable resin, and the melting temperature of an adhesive agent lower than the heat-resistant temperature of the suction disk 10, the sealing member 11 and the supporting member 12 are used. Even when worn, the new spin chuck 1 can be easily remanufactured based on the spin chuck 1 with the seal member 11 and the support member 12 worn. Hereinafter, the process of remanufacturing the spin chuck 1 will be specifically described. 3-10 is explanatory drawing which shows the outline of the reproduction | regeneration process of the spin chuck 1. FIG.

スピンチャック1の再製作にあたっては、先ず吸着盤10と回転軸20とを接合する接着剤Gの溶融温度以上の温度、例えば150℃で、スピンチャック1を加熱する。これにより、接着剤Gを溶融させ、図3に示すように、吸着盤10から回転軸20が取りはずされる。   In remanufacturing the spin chuck 1, first, the spin chuck 1 is heated at a temperature equal to or higher than the melting temperature of the adhesive G that joins the suction plate 10 and the rotating shaft 20, for example, 150 ° C. As a result, the adhesive G is melted, and the rotating shaft 20 is removed from the suction disk 10 as shown in FIG.

次に、シール部材11と支持部材12を例えば吸着盤10ごと、吸着盤10の耐熱温度より低く且つシール部材11と支持部材12を構成する紫外線硬化樹脂Rの炭化温度以上の温度、例えば550℃で加熱する。これにより、シール部材11及び支持部材12が炭化され、図4に示すように、当該シール部材11と支持部材12とが吸着盤10から除去され、吸着盤10のみが残される。   Next, the temperature of the sealing member 11 and the supporting member 12 together with, for example, the suction plate 10 is lower than the heat resistance temperature of the suction plate 10 and is equal to or higher than the carbonization temperature of the ultraviolet curable resin R constituting the sealing member 11 and the supporting member 12, for example, 550 ° C. Heat with. Thereby, the seal member 11 and the support member 12 are carbonized, and as shown in FIG. 4, the seal member 11 and the support member 12 are removed from the suction plate 10, and only the suction plate 10 is left.

次に、図5に示すように、シール部材11と支持部材12が除去された吸着盤10の上面であって、シール部材11及び支持部材12が設けられていた箇所に、例えばフォトリソグラフィーによりレジストパターンPを形成する。   Next, as shown in FIG. 5, on the upper surface of the suction cup 10 from which the seal member 11 and the support member 12 have been removed, a resist is formed, for example, by photolithography at a location where the seal member 11 and the support member 12 are provided. A pattern P is formed.

次いで、図6に示すように、レジストパターンPが形成された吸着盤10に離型剤Sを塗布する。この際、吸着盤10におけるレジストパターンPが形成されている箇所は、当該レジストパターンPによりマスキングされ、離型剤Sは塗布されない。なお、離型剤Sの材料には、上述の紫外線硬化樹脂に対して撥液性を有する材料、例えばフッ素樹脂等が用いられる。   Next, as shown in FIG. 6, a release agent S is applied to the suction disk 10 on which the resist pattern P is formed. At this time, the portion of the suction disk 10 where the resist pattern P is formed is masked by the resist pattern P, and the release agent S is not applied. In addition, as the material of the release agent S, a material having liquid repellency with respect to the above-described ultraviolet curable resin, for example, a fluororesin is used.

その後、図7に示すように、レジストパターンPを例えばエッチング等により除去する。これにより、吸着盤10の上面に、離型剤Sによってシール部材11及び支持部材12に対応するネガパターンが形成される。その後、離型剤Sによるネガパターンが形成された吸着盤10を、例えば200℃に加熱して、離型剤Sを焼成して固化させる。なお、離型剤Sを固化させるにあたっては必ずしも焼成する必要はなく、例えば所定の時間常温環境下に置いておくことで固化させてもよい。   Thereafter, as shown in FIG. 7, the resist pattern P is removed by, for example, etching. As a result, a negative pattern corresponding to the seal member 11 and the support member 12 is formed on the upper surface of the suction plate 10 by the release agent S. Thereafter, the suction plate 10 on which the negative pattern is formed by the release agent S is heated to, for example, 200 ° C., and the release agent S is baked and solidified. In addition, when solidifying the mold release agent S, it is not always necessary to bake. For example, it may be solidified by leaving it in a room temperature environment for a predetermined time.

その後、図8に示すように、吸着盤10上面の離型剤Sが塗布されていない箇所に、例えば塗布ノズル30を用いて紫外線硬化樹脂Rを塗布する。この際、吸着盤10上面に塗布された紫外線硬化樹脂Rの周囲には、紫外線硬化樹脂Rに対して撥液性を有する離型剤Sが塗布されているので、吸着盤10に塗布された紫外線硬化樹脂Rは、表面張力により上に凸状となる。   Thereafter, as illustrated in FIG. 8, the ultraviolet curable resin R is applied to a portion of the upper surface of the suction plate 10 where the release agent S is not applied using, for example, the application nozzle 30. At this time, since the release agent S having liquid repellency with respect to the ultraviolet curable resin R is applied around the ultraviolet curable resin R applied to the upper surface of the adsorption plate 10, it is applied to the adsorption plate 10. The ultraviolet curable resin R becomes convex upward due to surface tension.

その後、図9に示すように、紫外線硬化樹脂Rが塗布された吸着盤10に紫外線Uを照射して紫外線硬化樹脂Rを硬化させ、シール部材11と支持部材12を形成する。具体的には、吸着盤10の上面の外周縁部に沿って塗布された紫外線硬化樹脂Rを硬化させることでシール部材11が形成され、吸着盤10の上面であってシール部材11の内側に塗布された紫外線硬化樹脂Rを硬化させることで複数の支持部材12がそれぞれ形成される。   Thereafter, as shown in FIG. 9, the ultraviolet curable resin R is cured by irradiating the suction disk 10 coated with the ultraviolet curable resin R with the ultraviolet light U, thereby forming the seal member 11 and the support member 12. Specifically, the seal member 11 is formed by curing the ultraviolet curable resin R applied along the outer peripheral edge of the upper surface of the suction disk 10, and is formed on the upper surface of the suction disk 10 and inside the seal member 11. A plurality of support members 12 are formed by curing the applied ultraviolet curable resin R.

その後、離型剤Sを除去し、図10に示すように、シール部材11と支持部材12が形成された吸着盤10に回転軸20を接着剤Gを介して接続する。これにより、使用済みのスピンチャック1を再生して、新たなスピンチャックを製作することができる。   Thereafter, the release agent S is removed, and the rotating shaft 20 is connected via the adhesive G to the suction disk 10 on which the seal member 11 and the support member 12 are formed, as shown in FIG. Thereby, a used spin chuck 1 can be regenerated and a new spin chuck can be manufactured.

以上の実施の形態によれば、スピンチャック1のシール部材11と支持部材12が、吸着盤10の耐熱温度よりも低い温度で炭化する材料で形成されているので、例えばスピンチャック1を繰り返し使用することによりシール部材11と支持部材12が磨耗した場合に、シール部材11と支持部材12を吸着盤10の耐熱温度より低く且つシール部材11と支持部材12の炭化温度以上の温度で加熱することで、シール部材11と支持部材12を炭化し、吸着盤10から容易に除去することができる。そして、シール部材11と支持部材12を除去した後の吸着盤10に、再度シール部材11と支持部材12を形成すれば、この吸着盤10を基にして新たなスピンチャック1を容易に製作することができる。その結果、スピンチャック1の製作コストや製作時間を低減することができる。   According to the above embodiment, since the seal member 11 and the support member 12 of the spin chuck 1 are formed of a material that carbonizes at a temperature lower than the heat resistant temperature of the suction plate 10, for example, the spin chuck 1 is repeatedly used. When the sealing member 11 and the supporting member 12 are worn by doing so, the sealing member 11 and the supporting member 12 are heated at a temperature lower than the heat resistance temperature of the suction cup 10 and at or above the carbonization temperature of the sealing member 11 and the supporting member 12. Thus, the seal member 11 and the support member 12 can be carbonized and easily removed from the suction disk 10. Then, if the seal member 11 and the support member 12 are formed again on the suction plate 10 after the seal member 11 and the support member 12 are removed, a new spin chuck 1 can be easily manufactured based on the suction plate 10. be able to. As a result, the manufacturing cost and manufacturing time of the spin chuck 1 can be reduced.

なお、以上の実施の形態では、吸着盤10の耐熱温度、紫外線硬化樹脂Rの炭化温度、接着剤Gの溶融温度を、この順で低くなるようにしていたが、紫外線硬化樹脂Rの炭化温度及び接着剤Gの溶融温度については、吸着盤10の耐熱温度よりも低ければ、接着剤Gの溶融温度が紫外線硬化樹脂Rの炭化温度を上回っていてもよい。いずれの場合においても、吸着盤10の耐熱温度が、紫外線硬化樹脂Rの炭化温度及び接着剤Gの溶融温度を上回っていれば、吸着盤10の耐熱温度より低く且つ接着剤Gの溶融温度及び紫外線硬化樹脂Rの炭化温度以上の温度で加熱することで、吸着盤10を損傷させることなくシール部材11、支持部材12及び接着剤Gを吸着盤10から除去することができる。   In the above embodiment, the heat-resistant temperature of the suction plate 10, the carbonization temperature of the ultraviolet curable resin R, and the melting temperature of the adhesive G are decreased in this order. As for the melting temperature of the adhesive G, the melting temperature of the adhesive G may be higher than the carbonization temperature of the ultraviolet curable resin R as long as it is lower than the heat resistance temperature of the suction disk 10. In any case, if the heat resistance temperature of the suction disk 10 is higher than the carbonization temperature of the ultraviolet curable resin R and the melting temperature of the adhesive G, the heat resistance temperature of the suction disk 10 is lower than the heat resistance temperature of the suction disk 10 and By heating at a temperature equal to or higher than the carbonization temperature of the ultraviolet curable resin R, the seal member 11, the support member 12, and the adhesive G can be removed from the suction plate 10 without damaging the suction plate 10.

なお、吸着盤10から紫外線硬化樹脂R、即ちシール部材11及び支持部材12を除去する方法として、加熱してシール部材11及び支持部材12を炭化させる以外に、例えば吸着盤10ごとシール部材11及び支持部材12を薬液に浸漬させて除去する方法を用いてもよい。   In addition, as a method of removing the ultraviolet curable resin R, that is, the seal member 11 and the support member 12 from the suction plate 10, in addition to heating and carbonizing the seal member 11 and the support member 12, for example, together with the suction plate 10, the seal member 11 and A method of removing the support member 12 by immersing it in a chemical solution may be used.

具体的には、例えば濃度98wt%の硫酸(HSO)と濃度30wt%の過酸化水素水(H)を、6:1の配合率で混合した混合液を130℃に加熱し、当該加熱した混合液中に吸着盤10ごとシール部材11及び支持部材12を30秒間浸漬させる。これにより、シール部材11及び支持部材12を溶解させ、吸着盤10から除去することができる。この際、セラミックスである吸着盤10は、混合液に溶解することがない。その後、吸着盤10を混合液から引き上げ、約5分間、例えば純水にて流水洗浄を行い、次いで自然乾燥させることで、吸着盤10をシール部材11と支持部材12が形成される前の状態に戻すことができる。かかる場合、吸着盤10の材質に求められる特性は、上述の加熱した混合液への耐性であり、セラミックスのような1000℃以上の耐熱性については不要である。したがって、硫酸と過酸化水素水の混合液によりシール部材11及び支持部材12を除去する場合においては、吸着盤10の材料として、セラミックス以外にも、例えば耐薬品性の樹脂などを用いることができる。 Specifically, for example, a mixed solution in which sulfuric acid (H 2 SO 4 ) having a concentration of 98 wt% and hydrogen peroxide water (H 2 O 2 ) having a concentration of 30 wt% is mixed at a mixing ratio of 6: 1 is heated to 130 ° C. Then, the sealing member 11 and the supporting member 12 are immersed in the heated mixed liquid together with the suction plate 10 for 30 seconds. Thereby, the seal member 11 and the support member 12 can be dissolved and removed from the suction disk 10. At this time, the suction disk 10 made of ceramics does not dissolve in the mixed solution. Thereafter, the suction plate 10 is pulled up from the mixed solution, washed with running water, for example, with pure water, and then naturally dried, so that the suction plate 10 is in a state before the seal member 11 and the support member 12 are formed. Can be returned to. In such a case, the characteristic required for the material of the suction disk 10 is the resistance to the heated mixed liquid described above, and is not necessary for the heat resistance of 1000 ° C. or higher like ceramics. Therefore, when removing the seal member 11 and the support member 12 with a mixed solution of sulfuric acid and hydrogen peroxide solution, for example, a chemical-resistant resin can be used as the material of the suction plate 10 in addition to ceramics. .

以上の実施の形態においては、使用済みのスピンチャック1を再生して新たなスピンチャック1を製作する場合について説明したが、例えば、新規な吸着盤10からスピンチャック1を新たに製作する場合は、シール部材11と支持部材12の炭化除去は不要であるので、上述の図5〜図10に示される工程のみを行えばよい。   In the above embodiment, the case where the used spin chuck 1 is regenerated and a new spin chuck 1 is manufactured has been described. For example, when the spin chuck 1 is newly manufactured from the new suction disk 10, for example. Since carbonization removal of the seal member 11 and the support member 12 is not necessary, only the steps shown in FIGS.

以上の実施の形態では、例えば塗布ノズル30により紫外線硬化樹脂Rを吸着盤10に塗布したが、紫外線硬化樹脂Rの塗布方法については本実施の形態に限定されるものではなく、例えばスクリーン印刷などにより塗布してもよいし、いわゆるインプリント法により塗布してもよい。   In the above embodiment, for example, the ultraviolet curable resin R is applied to the suction disk 10 by the application nozzle 30. However, the method of applying the ultraviolet curable resin R is not limited to the present embodiment. May be applied by a so-called imprint method.

インプリント法を用いる場合は、例えば図11に示すように、シール部材11と支持部材12の凹凸パターンが形成されたテンプレート40に離型剤Sを塗布し、離型剤Sの上から紫外線硬化樹脂Rをテンプレート40に塗布する。次いで、図12に示すように、当該テンプレート40を吸着盤10に押し付けることにより、図13に示すようにシール部材11と支持部材12に対応する紫外線硬化樹脂Rが吸着盤10の表面に転写される。このように、インプリント法を用いた場合、吸着盤10にレジストパターンPによるマスキングを行う工程等が不要となるので、スピンチャック1の製作に要する時間を更に短縮することができる。   When using the imprint method, for example, as shown in FIG. 11, the release agent S is applied to the template 40 on which the concave / convex pattern of the seal member 11 and the support member 12 is formed, and UV curing is performed on the release agent S. Resin R is applied to the template 40. Next, as shown in FIG. 12, by pressing the template 40 against the suction plate 10, the ultraviolet curable resin R corresponding to the seal member 11 and the support member 12 is transferred to the surface of the suction plate 10 as shown in FIG. 13. The As described above, when the imprint method is used, the process of masking the suction disk 10 with the resist pattern P is not required, and therefore the time required for manufacturing the spin chuck 1 can be further shortened.

以上の実施の形態においては、シール部材11及び支持部材12の上端部は、その断面形状が球面状に形成されている。この場合、スピンチャック1により吸着保持されるウェハWと、シール部材11及び支持部材12とは、平面と球面で接触するため、例えばウェハWがシール部材11及び支持部材12と接触した際に、当該ウェハWの裏面が削られにくくなり、また、シール部材11及び支持部材12の磨耗も低減できる。これにより、スピンチャック1の長寿命化を図ることができる。   In the above embodiment, the cross-sectional shape of the upper end portions of the seal member 11 and the support member 12 is formed in a spherical shape. In this case, since the wafer W sucked and held by the spin chuck 1 and the seal member 11 and the support member 12 are in contact with a flat surface and a spherical surface, for example, when the wafer W comes into contact with the seal member 11 and the support member 12, The back surface of the wafer W is less likely to be cut, and the wear of the seal member 11 and the support member 12 can be reduced. Thereby, the lifetime of the spin chuck 1 can be extended.

なお、従来のスピンチャック100を用いて、例えばウェハWにレジスト塗布処理を施す際に当該ウェハWを吸着保持すると、スピンチャック100に付着していた微小なパーティクルなどの異物がウェハWの裏面に転写されてしまうという問題があった。これは、スピンチャック100を例えばPEEKにより一体成形した後、シール部102の上端面を研磨により鏡面状に仕上げる際に発生し、研磨の際に生じた微小な溝に堆積したパーティクルや、シール部102や支持部103とウェハWとが接触する際に、シール部102や支持部103が磨耗することで発生するパーティクルに起因している。   For example, if the wafer W is sucked and held when the conventional spin chuck 100 is subjected to a resist coating process, foreign matters such as fine particles adhering to the spin chuck 100 are formed on the back surface of the wafer W. There was a problem of being transferred. This occurs when the spin chuck 100 is integrally formed by PEEK, for example, and then the upper end surface of the seal portion 102 is finished to a mirror surface by polishing, and particles accumulated in a minute groove generated during polishing or the seal portion This is due to particles generated by wear of the seal portion 102 and the support portion 103 when the wafer 102 and the support portion 103 come into contact with the wafer W.

そのため、従来のスピンチャック100では、例えば流水で洗浄したのち、当該スピンチャック100の上面に例えば清掃用のウェハを複数回押し当て、当該清掃用のウェハの裏面にパーティクルを転写させることで、スピンチャックのパーティクルを除去する、いわゆるエージングという作業が行われる。そして、このエージング作業においては、清掃用のウェハの裏面に転写されるパーティクルを所望の数まで低減するまでに、100枚以上のウェハが消費されていた。   Therefore, in the conventional spin chuck 100, for example, after cleaning with running water, a cleaning wafer is pressed against the upper surface of the spin chuck 100 a plurality of times, for example, and particles are transferred to the back surface of the cleaning wafer. A so-called aging operation for removing chuck particles is performed. In this aging operation, 100 or more wafers have been consumed before the number of particles transferred to the back surface of the cleaning wafer is reduced to a desired number.

これに対して、本実施の形態にかかるスピンチャック1においては、シール部材11及び支持部材12の状端部の断面形状が球面状となっており、ウェハWとシール部材11及び支持部材12とは平面と球面で接触するので、シール部材11や支持部材12が磨耗することを抑制できる。その結果、シール部材11や支持部材12の磨耗に起因するパーティクルを低減でき、ウェハW裏面へのパーティクルの付着を抑制することができる。   On the other hand, in the spin chuck 1 according to the present embodiment, the cross-sectional shapes of the end portions of the seal member 11 and the support member 12 are spherical, and the wafer W, the seal member 11 and the support member 12, Is in contact with a flat surface and a spherical surface, it is possible to prevent the seal member 11 and the support member 12 from being worn. As a result, particles due to wear of the seal member 11 and the support member 12 can be reduced, and adhesion of particles to the back surface of the wafer W can be suppressed.

また、シール部材11の上端面の断面形状が球面状であることにより、シール部材11とその上部に位置するウェハWとは常に密着した状態が維持されるので、従来のスピンチャック100のシール部102のように研磨作業を行わずとも、高いシール性を維持することができる。したがって、シール部102の研磨によるパーティクルも生じないため、エージング作業を行わずとも、ウェハWの裏面に転写されるパーティクルを低減することができる。   In addition, since the cross-sectional shape of the upper end surface of the seal member 11 is spherical, the seal member 11 and the wafer W positioned above the seal member 11 are always kept in close contact with each other. Even if polishing work is not performed as in 102, high sealing performance can be maintained. Therefore, particles due to polishing of the seal portion 102 are not generated, so that particles transferred to the back surface of the wafer W can be reduced without performing an aging operation.

なお、本発明者らが、本実施の形態にかかるスピンチャック1と、PEEKにより成形された従来のスピンチャック100とにおいて、ウェハWの裏面に転写されるパーティクルについて調査したところ、スピンチャック1では、従来のスピンチャック100と比較して、裏面に付着するパーティクルを大幅に低減できることが確認できた。その結果を図14、図15に示す。   The inventors investigated the particles transferred to the back surface of the wafer W in the spin chuck 1 according to the present embodiment and the conventional spin chuck 100 formed by PEEK. Compared with the conventional spin chuck 100, it was confirmed that particles adhering to the back surface can be greatly reduced. The results are shown in FIGS.

図14は、従来のスピンチャック100を流水洗浄した後、図15は、本実施の形態にかかるスピンチャック1を同じく流水洗浄した後、当該スピンチャック100、1によりウェハWを吸着保持した結果、ウェハWの裏面に転写されたパーティクルの分布と、パーティクルの粒径毎の個数を計数したグラフを示している。   FIG. 14 shows a result of washing the conventional spin chuck 100 with running water, and FIG. 15 shows a result of sucking and holding the wafer W by the spin chuck 100 and 1 after washing the spin chuck 1 according to the present embodiment with running water. The graph which counted the distribution of the particle | grains transcribe | transferred by the back surface of the wafer W, and the number for every particle diameter of a particle is shown.

図14に示すように、従来のスピンチャック100においは、ウェハW裏面におけるスピンチャック100と接触する部分の全面にわたって、パーティクルが付着している。また、ウェハWの裏面に付着した粒径が0.13μm以上のパーティクルの数も約44,000個と、非常に膨大なものとなっていた。   As shown in FIG. 14, in the conventional spin chuck 100, particles adhere to the entire surface of the portion in contact with the spin chuck 100 on the back surface of the wafer W. Further, the number of particles having a particle diameter of 0.13 μm or more adhered to the back surface of the wafer W was very large, about 44,000.

これに対して、図15に示すように、本実施の形態にかかるスピンチャック1においは、ウェハW裏面に付着したパーティクルの数が約750個と、大幅に低減されていることが確認できた。また、ウェハWへのパーティクルの付着も、局所的に見られるのみである。   On the other hand, as shown in FIG. 15, in the spin chuck 1 according to the present embodiment, it was confirmed that the number of particles adhering to the back surface of the wafer W was significantly reduced to about 750. . Further, the adhesion of particles to the wafer W is only seen locally.

したがって、本実施の形態のスピンチャック1によれば、ウェハW裏面へのパーティクルの転写も大幅に低減することができることができる。   Therefore, according to the spin chuck 1 of the present embodiment, the transfer of particles to the back surface of the wafer W can be greatly reduced.

また、以上の実施の形態では、シール部材11並びに支持部材12、吸着盤10、及び回転軸20がそれぞれ導電性を備え、さらに、吸着盤10と回転軸20とは導電性を有する接着剤Gで接続されているので、当該シール部材11並びに支持部材12、吸着盤10、及び回転軸20は電気的に等電位な状態になっている。したがって、例えば回転軸20を、アース電位に接地された回転機構に接続するとこで、スピンチャック1のアースをとることができ、スピンチャック1が帯電することを防止できる。これにより、スピンチャック1にパーティクル等の異物が付着しにくくなり、ウェハW裏面に転写されるパーティクルを更に低減することができる。   Moreover, in the above embodiment, the sealing member 11 and the support member 12, the suction disk 10, and the rotating shaft 20 each have conductivity, and the suction disk 10 and the rotating shaft 20 have conductivity. Therefore, the seal member 11, the support member 12, the suction plate 10, and the rotating shaft 20 are in an electrically equipotential state. Therefore, for example, by connecting the rotating shaft 20 to a rotating mechanism grounded to a ground potential, the spin chuck 1 can be grounded, and the spin chuck 1 can be prevented from being charged. This makes it difficult for foreign matters such as particles to adhere to the spin chuck 1, and particles transferred to the back surface of the wafer W can be further reduced.

以上の実施の形態では、支持部材12の上端部の高さをシール部材11の上端部の高さより低くし、さらに、各支持部材12は、上端部の高さが、吸着盤10の外周方向から中心方向に向かって順に低くなるようにしていたが、支持部材12の上端部の高さ及びシール部材11の上端部の高さは本実施の形態に限定されるものではなく、スピンチャック1によりウェハWを適切に吸着保持できれば、任意に設定が可能である。   In the above embodiment, the height of the upper end portion of the support member 12 is made lower than the height of the upper end portion of the seal member 11, and the height of the upper end portion of each support member 12 is the outer peripheral direction of the suction cup 10. However, the height of the upper end portion of the support member 12 and the height of the upper end portion of the seal member 11 are not limited to the present embodiment, and the spin chuck 1 If the wafer W can be appropriately sucked and held by the above, it can be arbitrarily set.

特に、従来のスピンチャック100のように、シール部102の上端面を鏡面仕上げしている場合は、ウェハWと上端面との間のシール性を維持するためには、ウェハWと上端面とを平行に接触させる必要があった。そのため、シール部102や支持部103の製作にあたっては、その高さを厳密に管理する必要があった。これに対して、本実施の形態では、シール部材11及び支持部材12の上端部を球面状に形成しているので、ウェハをシール部材11及び支持部材12が接触する角度によらず、常にシール性を維持した状態で接触させることができる。このため、シール部材11及び支持部材12の高さを厳密に管理する必要がなく、スピンチャック1の製作が容易となる。   In particular, when the upper end surface of the seal portion 102 is mirror-finished as in the conventional spin chuck 100, in order to maintain the sealing performance between the wafer W and the upper end surface, Needed to be in parallel contact. Therefore, when manufacturing the seal portion 102 and the support portion 103, it is necessary to strictly control the height thereof. In contrast, in the present embodiment, since the upper end portions of the seal member 11 and the support member 12 are formed in a spherical shape, the wafer is always sealed regardless of the angle at which the seal member 11 and the support member 12 contact each other. The contact can be made while maintaining the property. For this reason, it is not necessary to strictly control the heights of the seal member 11 and the support member 12, and the manufacture of the spin chuck 1 is facilitated.

なお、以上の実施の形態においては、各支持部材12は半円環状に形成されていたが、支持部材12の形状は本実施の形態に限定されるものではなく、例えばスピンチャック1が用いられる機器において必要とされる吸着力や被吸着物との間の摩擦抵抗に応じて任意に変更が可能である。例えば、高い吸着力が必要とされない機器においては、例えば図16に示すように、ドット状の支持部材50を複数形成してもよい。なお、支持部材50も、支持部材12と同様に、その断面形状が上に凸状の略半円形状となるように構成されている。   In the above embodiment, each support member 12 is formed in a semi-annular shape. However, the shape of the support member 12 is not limited to this embodiment, and for example, the spin chuck 1 is used. Any change can be made according to the suction force required in the device and the frictional resistance between the device and the object to be adsorbed. For example, in a device that does not require a high suction force, a plurality of dot-like support members 50 may be formed as shown in FIG. 16, for example. Note that, like the support member 12, the support member 50 is also configured so that its cross-sectional shape is an upwardly convex semi-circular shape.

以上、添付図面を参照しながら本発明の好適な実施の形態について説明したが、本発明はかかる例に限定されない。当業者であれば、特許請求の範囲に記載された思想の範疇内において、各種の変更例または修正例に想到し得ることは明らかであり、それらについても当然に本発明の技術的範囲に属するものと了解される。本発明はこの例に限らず種々の態様を採りうるものである。本発明は、基板がウェハ以外のFPD(フラットパネルディスプレイ)、フォトマスク用のマスクレチクルなどの他の基板である場合にも適用できる。   The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood. The present invention is not limited to this example and can take various forms. The present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.

1 スピンチャック
10 吸着盤
11 シール部材
12 支持部材
20 回転軸
30 塗布ノズル
40 テンプレート
50 支持部材
P レジストパターン
R 紫外線硬化樹脂
S 離型剤
W ウェハ
DESCRIPTION OF SYMBOLS 1 Spin chuck 10 Suction board 11 Seal member 12 Support member 20 Rotating shaft 30 Coating nozzle 40 Template 50 Support member P Resist pattern R Ultraviolet curable resin S Release agent W Wafer

Claims (15)

基板を吸着保持する基板保持体であって、
第1の温度以上の耐熱性を有する吸着盤と、
前記吸着盤上面の外周縁部に沿って連続して設けられたシール部材と、
前記吸着盤の上面であって前記シール部材の内側に設けられた支持部材と、を有し、
前記シール部材と前記支持部材は、前記第1の温度より低い第2の温度以上で炭化する材料により形成されていることを特徴とする、基板保持体。
A substrate holder that holds the substrate by suction,
A suction plate having heat resistance equal to or higher than the first temperature;
A sealing member provided continuously along the outer peripheral edge of the upper surface of the suction plate;
A support member provided on the upper surface of the suction plate and inside the seal member,
The substrate holder, wherein the seal member and the support member are made of a material that is carbonized at a second temperature lower than the first temperature.
前記シール部材及び前記支持部材は、紫外線硬化樹脂により形成されていることを特徴とする、請求項1に記載の基板保持体。 The substrate holder according to claim 1, wherein the seal member and the support member are formed of an ultraviolet curable resin. 前記紫外線硬化樹脂には、ポリエチレンジオシチオフェンを含有させることで導電性が付与されていることを特徴とする、請求項2に記載の基板保持体 3. The substrate holder according to claim 2, wherein the ultraviolet curable resin is imparted with conductivity by containing polyethylenediosithiophene. 前記吸着盤はセラミックスにより形成されていることを特徴とする、請求項1〜3のいずれかに記載の基板保持体。 The substrate holder according to claim 1, wherein the suction disk is made of ceramics. 前記吸着盤は、導電性部材を含有させることで導電性が付与されたアルミナ、炭化シリコン又は窒化シリコンのいずれかであることを特徴とする、請求項4に記載の基板保持体。 5. The substrate holder according to claim 4, wherein the suction disk is made of any one of alumina, silicon carbide, or silicon nitride imparted with conductivity by containing a conductive member. 前記第1の温度は1000℃であり、前記第2の温度は400℃〜600℃であることを特徴とする、請求項1〜5に記載の基板保持体。 6. The substrate holder according to claim 1, wherein the first temperature is 1000 ° C. and the second temperature is 400 ° C. to 600 ° C. 6. 前記吸着盤には、当該吸着盤を回転させる回転軸が設けられ、前記吸着盤と前記回転軸とは、前記第1の温度より低い第3の温度以上で溶融する接着剤により接合されていることを特徴とする、請求項1〜6のいずれかに記載の基板保持体。 The suction disk is provided with a rotation shaft that rotates the suction disk, and the suction disk and the rotation shaft are joined by an adhesive that melts at a temperature equal to or higher than a third temperature lower than the first temperature. The substrate holder according to any one of claims 1 to 6, wherein 前記第3の温度は、150℃〜200℃であることを特徴とする、請求項7に記載の基板保持体。 The substrate holder according to claim 7, wherein the third temperature is 150 ° C. to 200 ° C. 前記シール部材及び前記支持部材の上端部は、その断面形状が球面状であることを特徴とする、請求項1〜8のいずれかに記載の基板保持体。 The substrate holding body according to any one of claims 1 to 8, wherein the upper end portions of the seal member and the support member have a spherical cross-sectional shape. 前記シール部材と前記支持部材は、硫酸と過酸化水素水の混合液により除去可能な紫外線硬化樹脂により形成され、
前記吸着盤は、第1の温度以上の耐熱性に代えて、前記硫酸と過酸化水素水の混合液への耐性を有していることを特徴とする、請求項1に記載の基板保持体。
The seal member and the support member are formed of an ultraviolet curable resin that can be removed by a mixed solution of sulfuric acid and hydrogen peroxide solution,
2. The substrate holder according to claim 1, wherein the adsorption plate has resistance to a mixed solution of the sulfuric acid and hydrogen peroxide solution instead of heat resistance at a first temperature or higher. .
前記硫酸と過酸化水素水の混合液は、硫酸と過酸化水素水の配合率が6:1でることを特徴とする、請求項10に記載の基板保持体。 11. The substrate holder according to claim 10, wherein the mixed solution of sulfuric acid and hydrogen peroxide solution has a mixing ratio of sulfuric acid and hydrogen peroxide solution of 6: 1. 基板を吸着保持する基板保持体の再生方法であって、
前記基板保持体は、第1の温度以上の耐熱性を有する吸着盤と、前記吸着盤上面の外周縁部に沿って連続して設けられたシール部材と、前記吸着盤の上面であって前記シール部材の内側に設けられた支持部材と、を有し、且つ前記シール部材と前記支持部材は、前記第1の温度より低い第2の温度以上で炭化する材料により形成され、
前記シール部材及び前記支持部材を、前記第1の温度より低く且つ前記第2の温度以上で加熱することで、前記シール部材と前記支持部材を炭化して除去し、
その後、前記シール部材と前記支持部材が除去された吸着盤の上面の外周縁部に沿って連続して液体状の紫外線硬化樹脂を塗布し、
前記吸着盤の上面であって前記外周縁部に塗布された紫外線硬化樹脂の内側に前記液体状の紫外線硬化樹脂を塗布し、
その後、前記吸着盤上面に塗布された各紫外線硬化樹脂に紫外線を照射して、前記吸着盤の上面の外周縁部に沿って塗布された紫外線硬化樹脂を硬化させることで前記シール部材を形成し、前記吸着盤の上面であって前記外周縁部に塗布された紫外線硬化樹脂の内側に塗布された紫外線硬化樹脂を硬化させることで支持部材を形成することを特徴とする、基板保持体の再生方法。
A method for regenerating a substrate holder that holds a substrate by suction,
The substrate holder includes a suction plate having heat resistance equal to or higher than a first temperature, a seal member continuously provided along an outer peripheral edge of the upper surface of the suction plate, and an upper surface of the suction plate, A support member provided inside the seal member, and the seal member and the support member are formed of a material that is carbonized at a second temperature lower than the first temperature,
By heating the seal member and the support member at a temperature lower than the first temperature and higher than the second temperature, the seal member and the support member are carbonized and removed.
Thereafter, a liquid UV curable resin is applied continuously along the outer peripheral edge of the upper surface of the suction disk from which the seal member and the support member have been removed,
Applying the liquid UV curable resin inside the UV curable resin applied to the outer peripheral edge of the upper surface of the suction disk,
Thereafter, the ultraviolet curable resin applied to the upper surface of the suction disk is irradiated with ultraviolet rays, and the ultraviolet curable resin applied along the outer peripheral edge of the upper surface of the suction disk is cured to form the seal member. The support member is formed by curing an ultraviolet curable resin applied on the upper surface of the suction disk and inside the ultraviolet curable resin applied to the outer peripheral edge, and regenerating the substrate holder Method.
前記シール部材と前記支持部材は、硫酸と過酸化水素水の混合液により除去可能な紫外線硬化樹脂により形成され、
前記吸着盤は、第1の温度以上の耐熱性に代えて、前記硫酸と過酸化水素水の混合液への耐性を有し、
前記シール部材及び前記支持部材の前記吸着盤からの除去は、前記第1の温度より低く且つ前記第2の温度以上での加熱に代えて、硫酸と過酸化水素水の混合液に浸漬させることにより行われることを特徴とする、請求項12に記載の基板保持体の再生方法。
The seal member and the support member are formed of an ultraviolet curable resin that can be removed by a mixed solution of sulfuric acid and hydrogen peroxide solution,
The adsorbing plate has resistance to a mixed liquid of the sulfuric acid and hydrogen peroxide water instead of the heat resistance of the first temperature or higher,
The removal of the seal member and the support member from the adsorption plate is immersed in a mixed solution of sulfuric acid and hydrogen peroxide solution instead of heating at a temperature lower than the first temperature and higher than the second temperature. The method for regenerating a substrate holder according to claim 12, wherein:
前記硫酸と過酸化水素水の混合液は、硫酸と過酸化水素水の配合率が6:1であることを特徴とする、請求項13に記載の基板保持体の再生方法。 14. The method for regenerating a substrate holder according to claim 13, wherein the mixed solution of sulfuric acid and hydrogen peroxide solution has a mixing ratio of sulfuric acid and hydrogen peroxide solution of 6: 1. 請求項1〜11のいずれかに記載の基板保持体の製造方法であって、
前記吸着盤上面の外周縁部に沿って連続して液体状の紫外線硬化樹脂を塗布し、
前記吸着盤の上面であって前記外周縁部に塗布された紫外線硬化樹脂の内側に前記液体状の紫外線硬化樹脂を塗布し、
その後、前記吸着盤上面に塗布された各紫外線硬化樹脂に紫外線を照射して、前記吸着盤の上面の外周縁部に沿って塗布された紫外線硬化樹脂を硬化させることで前記シール部材を形成し、前記吸着盤の上面であって前記外周縁部に塗布された紫外線硬化樹脂の内側に塗布された紫外線硬化樹脂を硬化させることで支持部材を形成することを特徴とする、基板保持体の製造方法。
It is a manufacturing method of the substrate holder according to any one of claims 1 to 11,
Applying a liquid UV curable resin continuously along the outer peripheral edge of the upper surface of the suction plate,
Applying the liquid UV curable resin inside the UV curable resin applied to the outer peripheral edge of the upper surface of the suction disk,
Thereafter, the ultraviolet curable resin applied to the upper surface of the suction disk is irradiated with ultraviolet rays, and the ultraviolet curable resin applied along the outer peripheral edge of the upper surface of the suction disk is cured to form the seal member. The support member is formed by curing the ultraviolet curable resin applied to the upper surface of the suction disk and inside the ultraviolet curable resin applied to the outer peripheral edge portion. Method.
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