JP2013098561A5

JP2013098561A5 -

Info

Publication number: JP2013098561A5
Application number: JP2012237129A
Authority: JP
Filing date: 2012-10-26
Publication date: 2016-01-21
Anticipated expiration: 2032-10-26

Claims

第１半導体層、活性層、及び第２半導体層を含む複数の発光領域と、前記発光領域の間に位置する境界領域とに区分される発光構造物と、
前記複数の発光領域のうちいずれか一つの第１半導体層上に配置される第１電極部と、
前記複数の発光領域のうち他のいずれか一つの第２半導体層上に配置される第２電極部と、
隣接する発光領域のいずれか一方の第１半導体層と、残りの他方の第２半導体層とを電気的に連結する連結電極と、
前記発光領域のうち少なくとも一つの第２半導体層上に配置される中間パッドと
を含み、
前記発光領域は、前記連結電極により直列連結される、発光素子。 A light emitting structure that is divided into a plurality of light emitting regions including a first semiconductor layer, an active layer, and a second semiconductor layer, and a boundary region located between the light emitting regions;
A first electrode portion disposed on any one first semiconductor layer of the plurality of light emitting regions;
A second electrode part disposed on any one second semiconductor layer of the plurality of light emitting regions;
A connection electrode for electrically connecting the first semiconductor layer of any one of the adjacent light emitting regions and the other second semiconductor layer;
An intermediate pad disposed on at least one second semiconductor layer of the light emitting region,
The light emitting region is a light emitting device connected in series by the connection electrode.

第１半導体層、活性層、及び第２半導体層を含む複数の発光領域と、前記発光領域の間に位置する境界領域とに区分される発光構造物と、
前記複数の発光領域のうちいずれか一つの第１半導体層上に配置される第１電極部と、
前記複数の発光領域のうち他のいずれか一つの第２半導体層上に配置される第２電極部と、
隣接する発光領域のいずれか一方の第１半導体層と、残りの他方の第２半導体層とを電気的に連結する連結電極と、
前記発光領域のうち少なくとも一つの第１半導体層上に配置される中間パッドと
を含み、
前記発光領域は、前記連結電極により直列連結される、発光素子。 A light emitting structure that is divided into a plurality of light emitting regions including a first semiconductor layer, an active layer, and a second semiconductor layer, and a boundary region located between the light emitting regions;
A first electrode portion disposed on any one first semiconductor layer of the plurality of light emitting regions;
A second electrode part disposed on any one second semiconductor layer of the plurality of light emitting regions;
A connection electrode for electrically connecting the first semiconductor layer of any one of the adjacent light emitting regions and the other second semiconductor layer;
An intermediate pad disposed on at least one first semiconductor layer of the light emitting region,
The light emitting region is a light emitting device connected in series by the connection electrode.

前記中間パッドは、
前記第１電極部及び前記第２電極部が位置する発光領域を除外した残りの発光領域のうち少なくとも一つの発光領域の第２半導体層上に配置される、請求項１に記載の発光素子。 The intermediate pad is
2. The light emitting device according to claim 1, wherein the light emitting device is disposed on a second semiconductor layer of at least one light emitting region among the remaining light emitting regions excluding the light emitting region where the first electrode part and the second electrode part are located.

前記中間パッドは、
前記第１電極部及び前記第２電極部が位置する発光領域を除外した残りの発光領域のうち少なくとも一つの発光領域の第１半導体層上に配置される、請求項２に記載の発光素子。 The intermediate pad is
3. The light emitting device according to claim 2, wherein the light emitting device is disposed on the first semiconductor layer of at least one light emitting region among the remaining light emitting regions excluding the light emitting region where the first electrode unit and the second electrode unit are located.

前記第１電極部及び前記第２電極部のそれぞれは、電源が供給されるパッドを含む、請求項１ないし４のいずれかに記載の発光素子。 5. The light emitting device according to claim 1, wherein each of the first electrode portion and the second electrode portion includes a pad to which power is supplied.

前記中間パッドは、同一の発光領域内に位置する連結電極と電気的に連結される、請求項１、３、及び５のいずれかに記載の発光素子。 The light emitting device according to claim 1, wherein the intermediate pad is electrically connected to a connection electrode located in the same light emitting region.

前記複数の発光領域及び前記境界領域上に配置される絶縁層をさらに含み、前記連結電極は、前記絶縁層上に配置される、請求項１ないし６のいずれかに記載の発光素子。 The light emitting device according to claim 1, further comprising an insulating layer disposed on the plurality of light emitting regions and the boundary region, wherein the connection electrode is disposed on the insulating layer.

同一の発光領域内に位置する前記中間パッドは、前記絶縁層上において前記連結電極と離隔して配置された、請求項７に記載の発光素子。 8. The light emitting device according to claim 7, wherein the intermediate pad located in the same light emitting region is disposed apart from the connection electrode on the insulating layer.

同一の発光領域内に位置する前記中間パッドは、前記絶縁層上において前記連結電極と一体に配置された、請求項７に記載の発光素子。 The light emitting device according to claim 7, wherein the intermediate pad located in the same light emitting region is disposed integrally with the connection electrode on the insulating layer.

前記連結電極は、
前記絶縁層を貫通して、前記隣接する発光領域のいずれか一方の第２半導体層と接触する第１部分を含む、請求項７ないし９のいずれかに記載の発光素子。 The connecting electrode is
10. The light emitting device according to claim 7, further comprising a first portion that penetrates through the insulating layer and contacts the second semiconductor layer of any one of the adjacent light emitting regions.

前記連結電極は、
前記絶縁層、前記第２半導体層、及び前記活性層を貫通して、前記隣接する発光領域のうち残りの他方の第１半導体層と接触する第２部分をさらに含み、
前記絶縁層は、前記第２部分と前記第２半導体層との間、及び前記第２部分と前記活性層との間に配置される、請求項１０に記載の発光素子。 The connecting electrode is
A second portion that penetrates through the insulating layer, the second semiconductor layer, and the active layer and contacts the other first semiconductor layer of the adjacent light emitting regions;
The light emitting device according to claim 10, wherein the insulating layer is disposed between the second portion and the second semiconductor layer, and between the second portion and the active layer.

前記連結電極の第２部分の下面は、前記活性層の下面よりも下に位置する、請求項１１に記載の発光素子。 The light emitting device according to claim 11, wherein a lower surface of the second portion of the connection electrode is positioned below a lower surface of the active layer.

前記発光構造物の下に配置される基板と、
前記発光領域と前記絶縁層との間に配置される伝導層とをさらに含む、請求項７ないし１１のいずれかに記載の発光素子。 A substrate disposed under the light emitting structure;
The light emitting device according to claim 7, further comprising a conductive layer disposed between the light emitting region and the insulating layer.

前記第２部分は、前記伝導層を貫通する、請求項１３に記載の発光素子。 The light emitting device according to claim 13, wherein the second portion penetrates the conductive layer.

前記絶縁層は、前記第２部分と前記伝導層との間に配置された、請求項１４に記載の発光素子。 The light emitting device according to claim 14, wherein the insulating layer is disposed between the second portion and the conductive layer.

前記第１電極部は第１電源の印加を受け、前記第２電極部及び前記中間パッドのうち少なくとも一つは第２電源の印加を受ける、請求項１、３、及び５ないし１５のいずれかに記載の発光素子。 The first electrode unit receives a first power supply, and at least one of the second electrode unit and the intermediate pad receives a second power supply. The light emitting element as described in.

前記第１電極部及び前記中間パッドのうち一つは第１電源の印加を受け、前記第２電極部は第２電源の印加を受ける、請求項２、４、及び５ないし１５のいずれかに記載の発光素子。 16. The device according to claim 2, wherein one of the first electrode unit and the intermediate pad receives a first power supply, and the second electrode unit receives a second power supply. The light emitting element of description.

第１半導体層、活性層、及び第２半導体層を含む複数の発光領域と、前記発光領域の間
に位置する境界領域とに区分される発光構造物と、
前記発光領域のうちいずれか一つの第１半導体層上に配置される第１電極部と、
前記複数の発光領域のそれぞれの第２半導体層の下に配置される金属層と、
前記複数の発光領域のうち他のいずれか一つの第２半導体層の下に配置される金属層と電気的に連結される第２電極部と、
前記金属層の相互間を電気的に絶縁させる絶縁層と、
隣接する発光領域のいずれか一方の第１半導体層と、残りの他方の第２半導体層とを電気的に連結する連結電極と、
前記発光領域のうち少なくとも一つの第１半導体層上に配置される中間パッドと
を含み、
前記発光領域は、前記連結電極により直列連結される、発光素子。 A light emitting structure that is divided into a plurality of light emitting regions including a first semiconductor layer, an active layer, and a second semiconductor layer, and a boundary region located between the light emitting regions;
A first electrode part disposed on any one first semiconductor layer in the light emitting region;
A metal layer disposed under a second semiconductor layer of each of the plurality of light emitting regions;
A second electrode part electrically connected to a metal layer disposed under any one second semiconductor layer of the plurality of light emitting regions;
An insulating layer for electrically insulating the metal layers from each other;
A connection electrode for electrically connecting the first semiconductor layer of any one of the adjacent light emitting regions and the other second semiconductor layer;
An intermediate pad disposed on at least one first semiconductor layer of the light emitting region,
The light emitting region is a light emitting device connected in series by the connection electrode.

前記金属層は、
オーミック層（ｏｈｍｉｃｌａｙｅｒ）及び反射層（ｒｅｆｌｅｃｔｉｖｅｌａｙｅｒ）のうち少なくとも一つを含む、請求項１８に記載の発光素子。 The metal layer is
The light emitting device of claim 18, further comprising at least one of an ohmic layer and a reflective layer.

前記中間パッドは、
前記第１電極部が位置する発光領域と、前記第２電極部と電気的に連結される発光領域とを除外した発光領域のうち少なくとも一つの発光領域の第１半導体層上に配置される、請求項１８又は１９に記載の発光素子。 The intermediate pad is
The light emitting region excluding the light emitting region where the first electrode part is located and the light emitting region electrically connected to the second electrode part is disposed on the first semiconductor layer of at least one light emitting region. The light emitting device according to claim 18.

前記複数の発光領域及び前記境界領域上に配置されるパッシベーション層（ｐａｓｓｉｖａｔｉｏｎ）をさらに含み、前記連結電極は、前記パッシベーション層上に配置される、請求項１８ないし２０のいずれかに記載の発光素子。 21. The light emitting device according to claim 18, further comprising a passivation layer disposed on the plurality of light emitting regions and the boundary region, wherein the connection electrode is disposed on the passivation layer. .

前記連結電極は、
前記パッシベーション層、前記第１半導体層、及び前記活性層を貫通して、前記隣接する発光領域のいずれか一方の第２半導体層と接触する少なくとも一つの第１部分と、
前記パッシベーション層を貫通して、前記隣接する発光領域のうち残りの他方の第１半導体層と接触する少なくとも一つの第２部分とを含み、
前記パッシベーション層は、前記第１部分と前記第１半導体層との間、及び前記第１部分と前記活性層との間に配置される、請求項１８ないし２１のいずれかに記載の発光素子。 The connecting electrode is
At least one first portion penetrating through the passivation layer, the first semiconductor layer, and the active layer and in contact with any one of the second semiconductor layers of the adjacent light emitting regions;
Including at least one second portion penetrating the passivation layer and contacting the other first semiconductor layer of the adjacent light emitting regions;
The light-emitting device according to claim 18, wherein the passivation layer is disposed between the first portion and the first semiconductor layer and between the first portion and the active layer.

前記第２電極部は、
前記複数の発光領域のうち前記他のいずれか一つの第２半導体層の下に配置される金属
層と電気的に連結されるバリア層（ｂａｒｒｉｅｒｌａｙｅｒ）と、
前記バリア層の下に配置される支持層とを含む、請求項１８ないし２２のいずれかに記載の発光素子。 The second electrode part is
A barrier layer electrically connected to a metal layer disposed under any one of the other second semiconductor layers of the plurality of light emitting regions;
The light emitting device according to claim 18, further comprising a support layer disposed under the barrier layer.

前記連結電極、または中間パッドと対応して各発光領域の第２半導体層と金属層との間に配置され、垂直方向に前記連結電極または前記中間パッドと少なくとも一部がオーバーラップされる電流遮断層をさらに含む、請求項１８ないし２３のいずれかに記載の発光素子。 Current blocking is disposed between the second semiconductor layer and the metal layer of each light emitting region corresponding to the connection electrode or the intermediate pad, and at least partially overlaps the connection electrode or the intermediate pad in the vertical direction. The light emitting device according to claim 18, further comprising a layer.

前記絶縁層は、
前記第２電極部と電気的に連結される前記他のいずれか一つの金属層を除外した金属層と前記第２電極部の相互間を電気的に絶縁させる、請求項１８ないし２４のいずれかに記載の発光素子。 The insulating layer is
25. The device according to any one of claims 18 to 24, wherein the second electrode unit is electrically insulated from a metal layer excluding the other metal layer electrically connected to the second electrode unit. The light emitting element as described in.

前記連結電極は、前記第１の前記第１半導体層と点接触する、請求項１ないし２５のいずれかに記載の発光素子。 The light emitting device according to claim 1, wherein the connection electrode is in point contact with the first semiconductor layer.