JP2013095656A5 - - Google Patents
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- JP2013095656A5 JP2013095656A5 JP2011242892A JP2011242892A JP2013095656A5 JP 2013095656 A5 JP2013095656 A5 JP 2013095656A5 JP 2011242892 A JP2011242892 A JP 2011242892A JP 2011242892 A JP2011242892 A JP 2011242892A JP 2013095656 A5 JP2013095656 A5 JP 2013095656A5
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- oxide
- sintering
- sintered body
- zno
- oxide sintered
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Description
本発明におけるＸ線回折条件は、以下のとおりである。
分析装置：理学電機製「Ｘ線回折装置ＲＩＮＴ−１５００」
分析条件：
ターゲット：Ｃｕ
単色化：モノクロメートを使用（Ｋα）
ターゲット出力：４０ｋＶ−２００ｍＡ
（連続測定）θ／２θ走査
スリット：発散１／２°、散乱１／２°、受光０．１５ｍｍ
モノクロメータ受光スリット：０．６ｍｍ
走査速度：２°／ｍｉｎ
サンプリング幅：０．０２°
測定角度（２θ）：５〜９０°
The X-ray diffraction conditions in the present invention are as follows.
Analysis device: “X-ray diffractometer RINT-1500” manufactured by Rigaku Corporation
Analysis conditions:
Target: Cu
Monochromatic: Uses a monochrome mate (Kα)
Target output: 40kV-200mA
(Continuous measurement) θ / 2θ scanning Slit: Divergence 1/2 °, Scattering 1/2 °, Received light 0.15 mm
Monochromator light receiving slit: 0.6mm
Scanning speed: 2 ° / min
Sampling width: 0.02 °
Measurement angle (2θ): 5 to 90 °
分析装置：理学電機製「Ｘ線回折装置ＲＩＮＴ−１５００」
分析条件：
ターゲット：Ｃｕ
単色化：モノクロメートを使用（Ｋα）
ターゲット出力：４０ｋＶ−２００ｍＡ
（連続測定）θ／２θ走査
スリット：発散１／２°、散乱１／２°、受光０．１５ｍｍ
モノクロメータ受光スリット：０．６ｍｍ
走査速度：２°／ｍｉｎ
サンプリング幅：０．０２°
測定角度（２θ）：５〜９０°
Analysis device: “X-ray diffractometer RINT-1500” manufactured by Rigaku Corporation
Analysis conditions:
Target: Cu
Monochromatic: Uses a monochrome mate (Kα)
Target output: 40kV-200mA
(Continuous measurement) θ / 2θ scanning Slit: Divergence 1/2 °, Scattering 1/2 °, Received light 0.15 mm
Monochromator light receiving slit: 0.6mm
Scanning speed: 2 ° / min
Sampling width: 0.02 °
Measurement angle (2θ): 5 to 90 °
Claims (3)
前記酸化物焼結体をＸ線回折したとき、ＺｎmＩｎ2Ｏ3+m（ｍは５〜７の整数）、Ｉｎ2Ｏ3、及びＺｎＯの各結晶相を含むと共に、相対密度９５％以上、比抵抗０．１Ω・ｃｍ以下であり、
前記酸化物焼結体に含まれる金属元素の含有量（原子％）をそれぞれ、［Ｚｎ］、［Ｉｎ］、［Ｔｉ］、［Ｍｇ］、［Ａｌ］、および［Ｎｂ］としたとき、［Ｚｎ］に対する［Ｉｎ］の比、［Ｚｎ］＋［Ｉｎ］＋［Ｔｉ］＋［Ｍｇ］＋［Ａｌ］＋［Ｎｂ］に対する［Ｔｉ］＋［Ｍｇ］＋［Ａｌ］＋［Ｎｂ］の比は、それぞれ下式を満足し、
前記酸化物焼結体に含まれる前記Ｚｎ m Ｉｎ 2 Ｏ 3+m 、前記Ｉｎ 2 Ｏ 3 、及び前記ＺｎＯの合計に対する各結晶相の体積比は、下式を満足することを特徴とする酸化物焼結体。
０．２７≦［Ｉｎ］／［Ｚｎ］≦０．４５
（［Ｔｉ］＋［Ｍｇ］＋［Ａｌ］＋［Ｎｂ］）／（［Ｚｎ］＋［Ｉｎ］＋［Ｔｉ］＋［Ｍｇ］＋［Ａｌ］＋［Ｎｂ］）≦０．０５
０．１≦Ｚｎ m Ｉｎ 2 Ｏ 3+m ／（Ｚｎ m Ｉｎ 2 Ｏ 3+m ＋Ｉｎ 2 Ｏ 3 ＋ＺｎＯ）＜０．７５
０．０５≦Ｉｎ 2 Ｏ 3 ／（Ｚｎ m Ｉｎ 2 Ｏ 3+m ＋Ｉｎ 2 Ｏ 3 ＋ＺｎＯ）≦０．７
０．０５≦ＺｎＯ／（Ｚｎ m Ｉｎ 2 Ｏ 3+m ＋Ｉｎ 2 Ｏ 3 ＋ＺｎＯ）≦０．７
（但し、Ｚｎ m Ｉｎ 2 Ｏ 3+m はＺｎ 5 Ｉｎ 2 Ｏ 8 、Ｚｎ 6 Ｉｎ 2 Ｏ 9 、Ｚｎ 7 Ｉｎ 2 Ｏ 10 の合計である。） An oxide sintered body obtained by mixing and sintering zinc oxide; indium oxide; and an oxide of at least one metal selected from the group consisting of Ti, Mg, Al, and Nb. ,
When the oxide sintered body was subjected to X-ray diffraction, it contained Zn m In 2 O 3 + m (m is an integer of 5 to 7), In 2 O 3 , and ZnO, and a relative density of 95%. more state, and we are following a specific resistance 0.1Ω · cm,
When the content (atomic%) of the metal element contained in the oxide sintered body is [Zn], [In], [Ti], [Mg], [Al], and [Nb], [ [In] to [Zn], [Ti] + [In] + [Ti] + [Mg] + [Al] + [Nb] to [Ti] + [Mg] + [Al] + [Nb] Satisfy the following formulas,
The volume ratio of each crystal phase to the sum of the Zn m In 2 O 3 + m , In 2 O 3 , and ZnO contained in the oxide sintered body satisfies the following formula: Sintered product.
0.27 ≦ [In] / [Zn] ≦ 0.45
([Ti] + [Mg] + [Al] + [Nb]) / ([Zn] + [In] + [Ti] + [Mg] + [Al] + [Nb]) ≦ 0.05
0.1 ≦ Zn m In 2 O 3 + m / (Zn m In 2 O 3 + m + In 2 O 3 + ZnO) <0.75
0.05 ≦ In 2 O 3 / (Zn m In 2 O 3 + m + In 2 O 3 + ZnO) ≦ 0.7
0.05 ≦ ZnO / (Zn m In 2 O 3 + m + In 2 O 3 + ZnO) ≦ 0.7
(However, Zn m In 2 O 3 + m is the total of Zn 5 In 2 O 8 , Zn 6 In 2 O 9 , and Zn 7 In 2 O 10. )
酸化亜鉛と；酸化インジウムと；Ｔｉ、Ｍｇ、Ａｌ、およびＮｂよりなる群から選択される少なくとも１種の金属の酸化物とを混合し、黒鉛型にセットした後、焼結温度８５０〜１０５０℃、該温度域での保持時間１〜１０時間で焼結する第一の焼結工程と、
前記第一の焼結工程後、焼結温度１０００〜１０５０℃（但し、第一の工程の焼結温度よりも高い温度）、該温度域での保持時間０．５〜１０時間で焼結する第二の焼結工程とを包含すると共に、
前記第一の焼結工程と前記第二の焼結工程を、加圧圧力１００〜５００ｋｇｆ／ｃｍ2で行うことを特徴とする酸化物焼結体の製造方法。 A method for producing the oxide sintered body according to claim 1 ,
Zinc oxide, indium oxide, and an oxide of at least one metal selected from the group consisting of Ti, Mg, Al, and Nb are mixed and set in a graphite mold, and then sintered at 850 to 1050 ° C. A first sintering step of sintering in a holding time of 1 to 10 hours in the temperature range;
After the first sintering step, sintering is performed at a sintering temperature of 1000 to 1050 ° C. (however, higher than the sintering temperature of the first step), and a holding time in the temperature range of 0.5 to 10 hours. Including a second sintering step,
A method for producing an oxide sintered body, wherein the first sintering step and the second sintering step are performed at a pressure of 100 to 500 kgf / cm 2 .
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011242892A JP5318932B2 (en) | 2011-11-04 | 2011-11-04 | Oxide sintered body, sputtering target, and manufacturing method thereof |
| PCT/JP2012/078325 WO2013065784A1 (en) | 2011-11-04 | 2012-11-01 | Oxide sintered compact and sputtering target, and method for producing same |
| TW101140794A TW201335407A (en) | 2011-11-04 | 2012-11-02 | Oxide sintered compact and sputtering target, and method for producing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011242892A JP5318932B2 (en) | 2011-11-04 | 2011-11-04 | Oxide sintered body, sputtering target, and manufacturing method thereof |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013095656A JP2013095656A (en) | 2013-05-20 |
| JP2013095656A5 true JP2013095656A5 (en) | 2013-06-27 |
| JP5318932B2 JP5318932B2 (en) | 2013-10-16 |
Family
ID=48192122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011242892A Active JP5318932B2 (en) | 2011-11-04 | 2011-11-04 | Oxide sintered body, sputtering target, and manufacturing method thereof |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5318932B2 (en) |
| TW (1) | TW201335407A (en) |
| WO (1) | WO2013065784A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI602939B (en) * | 2013-01-15 | 2017-10-21 | 出光興產股份有限公司 | Sputtering targets, oxide semiconductor films, and methods of making them |
| JP6613314B2 (en) * | 2015-11-25 | 2019-11-27 | 株式会社アルバック | Thin film transistor, oxide semiconductor film, and sputtering target |
| KR20230017294A (en) * | 2020-08-05 | 2023-02-03 | 미쓰이금속광업주식회사 | Sputtering target material and oxide semiconductor |
| CN113735564A (en) * | 2021-08-11 | 2021-12-03 | 芜湖映日科技股份有限公司 | Nb-doped IZO target blank and preparation method thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69328197T2 (en) * | 1992-12-15 | 2000-08-17 | Idemitsu Kosan Co | TRANSPARENT, CONDUCTIVE LAYER, TRANSPARENT, CONDUCTIVE BASE MATERIAL AND CONDUCTIVE MATERIAL |
| ES2383352T3 (en) * | 2001-07-17 | 2012-06-20 | Idemitsu Kosan Co., Ltd. | Cathodic spray target for the deposition of a transparent conductive film |
| WO2003086661A1 (en) * | 2002-04-05 | 2003-10-23 | Ppg Industries Ohio, Inc. | Process for applying automotive quality effect coatings to metal substrates |
| JP4488184B2 (en) * | 2004-04-21 | 2010-06-23 | 出光興産株式会社 | Indium oxide-zinc oxide-magnesium oxide sputtering target and transparent conductive film |
| US8461583B2 (en) * | 2007-12-25 | 2013-06-11 | Idemitsu Kosan Co., Ltd. | Oxide semiconductor field effect transistor and method for manufacturing the same |
| JP5096250B2 (en) * | 2008-07-18 | 2012-12-12 | 出光興産株式会社 | Oxide sintered body manufacturing method, oxide sintered body, sputtering target, oxide thin film, thin film transistor manufacturing method, and semiconductor device |
-
2011
- 2011-11-04 JP JP2011242892A patent/JP5318932B2/en active Active
-
2012
- 2012-11-01 WO PCT/JP2012/078325 patent/WO2013065784A1/en active Application Filing
- 2012-11-02 TW TW101140794A patent/TW201335407A/en unknown
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