JP2013084770A - Grinding method for wafer - Google Patents

Grinding method for wafer Download PDF

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JP2013084770A
JP2013084770A JP2011223714A JP2011223714A JP2013084770A JP 2013084770 A JP2013084770 A JP 2013084770A JP 2011223714 A JP2011223714 A JP 2011223714A JP 2011223714 A JP2011223714 A JP 2011223714A JP 2013084770 A JP2013084770 A JP 2013084770A
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Prior art keywords
resin
wafer
cured
grinding
support substrate
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Akihito Kawai
章仁 川合
Yasutaka Mizomoto
康隆 溝本
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Disco Corp
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Disco Abrasive Systems Ltd
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Priority to JP2011223714A priority Critical patent/JP2013084770A/en
Priority to TW101133141A priority patent/TWI549172B/en
Priority to CN2012103820380A priority patent/CN103042449A/en
Priority to KR1020120112369A priority patent/KR20130039308A/en
Publication of JP2013084770A publication Critical patent/JP2013084770A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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Abstract

PROBLEM TO BE SOLVED: To improve flatness of a rear face of a semiconductor wafer having unevenness on a front face when grinding the rear face.SOLUTION: A resin 2 is applied on a front face 1a of a wafer 1 so as to bury a bump 11, and the resin 2 is semi-cured. Then, a surface of the resin 2 is flattened by cutting to a depth not reaching the bump 11 such that the unevenness corresponding to the bump 11 does not appear on the surface of the resin. Then, a support substrate is adhered to the flattened surface of the resin, and a rear face of the wafer is ground in a state that the flat support substrate side is supported. Thereby, the rear face of the wafer after grinding can be flattened with high accuracy without being affected by the unevenness of the front face of the wafer.

Description

本発明は、表面にバンプが形成されたウェーハの裏面を研削する研削方法に関する。   The present invention relates to a grinding method for grinding a back surface of a wafer having bumps formed on the front surface.

近年、新たな３次元実装技術として、複数の半導体チップを積層し、積層した半導体チップを貫く貫通電極を形成して半導体チップ同士を接続する積層技術や、複数の半導体ウェーハを積層し、積層した半導体ウェーハを貫く貫通電極を形成して半導体ウェーハ同士を接続する積層技術（TSV : Through Silicon Via）が開発されつつある（例えば、特許文献１参照）。   In recent years, as a new three-dimensional mounting technology, a plurality of semiconductor chips are stacked, a stacking technique for forming through electrodes penetrating the stacked semiconductor chips and connecting the semiconductor chips, and a plurality of semiconductor wafers are stacked and stacked. A lamination technique (TSV: Through Silicon Via) for connecting semiconductor wafers by forming through electrodes penetrating the semiconductor wafer is being developed (see, for example, Patent Document 1).

一般に、３次元実装に用いる半導体ウェーハは、厚みが５０μｍ以下と薄くなるまで研削するため、湾曲してしまい、その後のハンドリングが困難になるという問題がある。そのため、半導体ウェーハの湾曲を防止するために、半導体ウェーハの表面に樹脂、ワックス等を介してハードプレートからなるサポートプレートを接合して半導体ウェーハの裏面を研削する方法が提案されている（例えば、特許文献２参照）。   In general, since a semiconductor wafer used for three-dimensional mounting is ground until the thickness becomes as thin as 50 μm or less, there is a problem that the semiconductor wafer is curved and subsequent handling becomes difficult. Therefore, in order to prevent the curvature of the semiconductor wafer, a method of grinding a back surface of the semiconductor wafer by bonding a support plate made of a hard plate to the surface of the semiconductor wafer via resin, wax or the like has been proposed (for example, Patent Document 2).

特開２００４−２４１４７９号公報JP 2004-241479 A 特開２００４−２０７６０６号公報JP 2004-207606 A

しかし、３次元実装に用いる半導体ウェーハは、表面にバンプ等が形成され凹凸があるため、ウェーハの表面全体を覆うように樹脂を塗布し、サポートプレートを樹脂表面に圧着して樹脂を硬化させると、バンプの凹凸に対応した凹凸が樹脂表面に表出した状態でサポートプレートが貼着されてしまう。   However, since the semiconductor wafer used for three-dimensional mounting has bumps on the surface and has irregularities, when resin is applied so as to cover the entire surface of the wafer and the support plate is pressed against the resin surface and the resin is cured The support plate is stuck in a state in which the unevenness corresponding to the unevenness of the bump is exposed on the resin surface.

そして、樹脂表面に凹凸が表出した状態で貼着されたサポートプレートに支持された半導体ウェーハの裏面を研削すると、残留した凹凸の影響により研削後の半導体ウェーハ裏面の平坦度が悪化してしまうという問題がある。   And, when the back surface of the semiconductor wafer supported by the support plate attached with the unevenness on the resin surface is ground, the flatness of the back surface of the semiconductor wafer after grinding deteriorates due to the effect of the remaining unevenness. There is a problem.

本発明は、上記問題にかんがみなされたもので、その目的は、表面に凹凸を有する半導体ウェーハの裏面を研削する場合において、当該裏面の平坦度を向上させることにある。   The present invention has been considered in view of the above problems, and an object of the present invention is to improve the flatness of a back surface of a semiconductor wafer having an uneven surface.

本発明は、表面にバンプが形成されたウェーハの裏面側を研削する研削方法に関するもので、以下の各ステップにより構成される。
（１）ウェーハの表面側から、バンプが埋没するように、外的刺激を受けて硬化する樹脂をウェーハの表面に塗布する樹脂塗布ステップ、
（２）外的刺激を受けて硬化する樹脂を、接着性が残った半硬化状態にさせる樹脂半硬化ステップ、
（３）樹脂半硬化ステップの後に、外的刺激を受けて硬化する樹脂の表面側からバンプに到達しない深さを切削して外的刺激を受けて硬化する樹脂の表面を平坦化させる樹脂表面平坦化ステップ、
（４）平坦化した外的刺激を受けて硬化する樹脂の表面に支持基板を圧着するとともに外的刺激を受けて硬化する樹脂を完全硬化させて、外的刺激を受けて硬化する樹脂を介して支持基板をウェーハ表面に貼着する支持基板貼着ステップ、
（５）支持基板に貼着したウェーハの裏面側からウェーハの薄化研削を行う研削ステップ。 The present invention relates to a grinding method for grinding the back side of a wafer having bumps formed on the front surface, and includes the following steps.
(1) A resin application step for applying a resin that is cured by external stimulation to the surface of the wafer so that the bumps are buried from the surface side of the wafer;
(2) a resin semi-curing step for causing a resin that cures in response to an external stimulus to a semi-cured state in which adhesiveness remains;
(3) After the resin semi-curing step, the resin surface that flattens the surface of the resin that is cured by receiving the external stimulus by cutting the depth that does not reach the bump from the surface side of the resin that is cured by the external stimulus. Flattening step,
(4) The support substrate is pressure-bonded to the surface of the resin that is cured by the flattened external stimulus, and the resin that is cured by the external stimulus is completely cured, and the resin is cured by receiving the external stimulus. A support substrate attaching step for attaching the support substrate to the wafer surface,
(5) A grinding step in which the wafer is thinned from the back side of the wafer attached to the support substrate.

本発明は、バンプが埋没するようにウェーハ表面に樹脂を塗布し、その樹脂を半硬化させた後に、バンプに到達しない深さを切削して樹脂の表面を平坦化するため、バンプに対応する凹凸が樹脂の表面に現れることがない。そして、平坦化した樹脂の表面に支持基板を貼着し、平坦な支持基板側が支持された状態でウェーハ裏面の研削を行うため、ウェーハ表面の凹凸の影響を受けずに、研削後のウェーハ裏面を高精度に平坦化することができる。   The present invention applies a resin to the wafer surface so that the bump is buried, and after semi-curing the resin, the depth that does not reach the bump is cut to flatten the surface of the resin. Unevenness does not appear on the surface of the resin. Then, a support substrate is attached to the surface of the flattened resin, and the wafer back surface is ground while the flat support substrate side is supported, so that the wafer back surface after grinding is not affected by the unevenness of the wafer surface. Can be flattened with high accuracy.

バンプが形成された半導体ウェーハの一例を示す一部拡大断面図である。It is a partially expanded sectional view which shows an example of the semiconductor wafer in which the bump was formed. バンプが埋没するように表面に樹脂が塗布された半導体ウェーハを示す一部拡大断面図である。It is a partially expanded sectional view which shows the semiconductor wafer by which resin was apply | coated to the surface so that a bump might be buried. 樹脂を半硬化させる状態を示す一部拡大断面図である。It is a partially expanded sectional view which shows the state which semi-hardens resin. 樹脂を切削して平坦化する状態を示す一部拡大断面図である。It is a partially expanded sectional view which shows the state which cuts and planarizes resin. 平坦化した樹脂に支持基板を貼着する状態を示す一部拡大断面図である。It is a partially expanded sectional view which shows the state which sticks a support substrate to the planarized resin. 半導体ウェーハの裏面を研削する状態を示す一部拡大断面図である。It is a partially expanded sectional view which shows the state which grinds the back surface of a semiconductor wafer.

図１に示す半導体ウェーハ１は、その内部の表面１ａ側に電極１０が埋め込まれて構成されており、各電極１０には、表面１ａから突出形成されたバンプ１１が接続されている。以下では、この半導体ウェーハ１の裏面１ｂを研削して薄化する方法について説明する。   A semiconductor wafer 1 shown in FIG. 1 is configured such that an electrode 10 is embedded on the inner surface 1a side, and bumps 11 formed to protrude from the surface 1a are connected to each electrode 10. Hereinafter, a method for grinding and thinning the back surface 1b of the semiconductor wafer 1 will be described.

（１）樹脂塗布ステップ
図２に示すように、最初に、バンプ１１が形成された表面１ａに樹脂２を塗布する。この樹脂２は、バンプ１１が樹脂２の中に埋没するように、バンプ１１の高さよりも厚く塗布する。 (1) Resin Application Step As shown in FIG. 2, first, the resin 2 is applied to the surface 1a on which the bumps 11 are formed. The resin 2 is applied thicker than the bumps 11 so that the bumps 11 are buried in the resin 2.

樹脂２は、外的刺激を受けることにより硬化して接着性が低下するタイプのものであり、例えば、加熱により硬化する熱硬化性樹脂、紫外線の照射を受けて硬化する紫外線硬化性樹脂等を使用することができるが、これらに限定されるものではない。以下では、樹脂２として熱硬化性樹脂を使用する場合について説明する。   The resin 2 is of a type that is cured by receiving an external stimulus and the adhesiveness is lowered. For example, a thermosetting resin that is cured by heating, an ultraviolet curable resin that is cured by irradiation with ultraviolet rays, or the like. Although it can be used, it is not limited to these. Below, the case where a thermosetting resin is used as the resin 2 is demonstrated.

（２）樹脂半硬化ステップ
樹脂塗布ステップの後、樹脂２に対して外的刺激の一種である熱を加えて加熱することにより、樹脂２を半硬化状態（Ｂステージ状態）とする。例えば、図３に示すように、半導体ウェーハ１の裏面１ｂをヒータ３ａの上に載置するとともに、樹脂２の上方にヒータ３ｂを近づけることにより、樹脂２の両面側から加熱を行う。樹脂２を半硬化状態とするために、全硬化状態とする場合よりもヒータ３ａ、３ｂの温度を低く設定する。このようにして樹脂２を加熱して半硬化状態とする。 (2) Resin semi-curing step After the resin application step, the resin 2 is heated by applying heat, which is a kind of external stimulus, to the resin 2 in a semi-cured state (B stage state). For example, as shown in FIG. 3, the back surface 1 b of the semiconductor wafer 1 is placed on the heater 3 a and the heater 3 b is brought close to the upper side of the resin 2 to heat the resin 2 from both sides. In order to make the resin 2 a semi-cured state, the temperatures of the heaters 3a and 3b are set lower than when the resin 2 is completely cured. In this way, the resin 2 is heated to a semi-cured state.

（３）樹脂表面平坦化ステップ
樹脂半硬化ステップの後、例えば図４に示すバイト切削装置４を用いて樹脂２の表面２ａ側を切削する。バイト切削装置４は、回転軸４０の下端部のホイール４１の下面にバイト４２が固定され、全体として昇降可能に構成されている。バイト４２は、超鋼合金等の下端にダイヤモンド等で形成された切削刃が形成されて構成されている。また、バイト切削装置４は、被加工物を保持する保持テーブル４３を備えている。なお、バイト切削装置４としては、例えば特開２００５−３４０５９２号公報に記載された構成のものを使用することができる。 (3) Resin surface flattening step After the resin semi-curing step, the surface 2a side of the resin 2 is cut using, for example, a cutting tool 4 shown in FIG. The cutting tool 4 is configured such that the cutting tool 42 is fixed to the lower surface of the wheel 41 at the lower end of the rotary shaft 40 and is movable up and down as a whole. The cutting tool 42 is configured by forming a cutting blade made of diamond or the like at the lower end of a super steel alloy or the like. The cutting tool 4 includes a holding table 43 that holds a workpiece. As the cutting tool 4, for example, a tool having a configuration described in Japanese Patent Application Laid-Open No. 2005-340592 can be used.

樹脂２の切削時は、半導体ウェーハ１の裏面１ｂを保持テーブル４３において保持し、半導体ウェーハ１をバイト４２の側方に位置させておく。そして、バイト４２の下端がバンプ１１の上端よりも上に位置するように設定し、その状態で、ホイール４１を図４における矢印Ａ方向に回転させるとともに、半導体ウェーハ１をバイト４２に近づける方向（矢印Ｂ方向）に移動させていく。そうすると、図４に示すように、樹脂２は、バンプ１１に達しない深さが切削され、樹脂２の表面２ａが削り取られ平坦化されて平坦面２ｂが形成される。樹脂２は半硬化状態となっているため、切削による平坦化が可能であるとともに、後の支持基板貼着ステップにおいて支持基板を貼着可能な状態となっている。   When cutting the resin 2, the back surface 1 b of the semiconductor wafer 1 is held on the holding table 43, and the semiconductor wafer 1 is positioned on the side of the cutting tool 42. Then, the lower end of the cutting tool 42 is set so as to be positioned above the upper end of the bump 11, and in this state, the wheel 41 is rotated in the direction of arrow A in FIG. Move in the direction of arrow B). Then, as shown in FIG. 4, the resin 2 is cut to a depth that does not reach the bumps 11, and the surface 2a of the resin 2 is scraped and flattened to form a flat surface 2b. Since the resin 2 is in a semi-cured state, it can be flattened by cutting and can be attached to the support substrate in the subsequent support substrate attachment step.

（４）支持基板貼着ステップ
樹脂表面平坦化ステップの後、図５に示すように、樹脂２の平坦面２ｂに支持基板５を圧着する。支持基板５としては、例えばガラスのような剛性が高い材料で形成された平板を用いる。樹脂２は半硬化状態であり接着性が残されているため、圧着により支持基板５と半導体ウェーハ１とを一体化させることが可能である。なお、樹脂２として紫外線硬化性樹脂を使用した場合は、樹脂２に対して後に紫外線を照射するために、支持基板５として透明又は半透明のものを使用する。 (4) Support substrate sticking step After the resin surface flattening step, the support substrate 5 is pressure-bonded to the flat surface 2b of the resin 2 as shown in FIG. As the support substrate 5, for example, a flat plate made of a material having high rigidity such as glass is used. Since the resin 2 is in a semi-cured state and remains adhesive, the support substrate 5 and the semiconductor wafer 1 can be integrated by pressure bonding. When an ultraviolet curable resin is used as the resin 2, a transparent or translucent substrate is used as the support substrate 5 in order to later irradiate the resin 2 with ultraviolet rays.

支持基板５を樹脂２に圧着した後、樹脂２を加熱することにより樹脂２を完全硬化させ、樹脂２を介して支持基板５を半導体ウェーハ１の表面１ａに貼着して固定する。なお、樹脂２の加熱は、例えば、樹脂半硬化ステップと同様に、ヒータを用いて樹脂２の両面側から加熱を行う。   After the support substrate 5 is pressure-bonded to the resin 2, the resin 2 is completely cured by heating the resin 2, and the support substrate 5 is adhered and fixed to the surface 1 a of the semiconductor wafer 1 through the resin 2. In addition, the heating of the resin 2 is performed from both sides of the resin 2 using a heater, for example, as in the resin semi-curing step.

樹脂表面平坦化ステップにおいて樹脂２を切削して平坦面２ｂを形成したため、バンプ１１の凹凸が樹脂２の表面に現れることがない。したがって、支持基板５の全面を確実に樹脂２の平坦面２ｂに貼着することができる。   Since the flat surface 2b is formed by cutting the resin 2 in the resin surface flattening step, the unevenness of the bumps 11 does not appear on the surface of the resin 2. Therefore, the entire surface of the support substrate 5 can be reliably adhered to the flat surface 2b of the resin 2.

（５）研削ステップ
支持基板貼着ステップの後、図６に示すように、例えば研削装置６を使用して半導体ウェーハ１の裏面１ｂを研削する。研削装置６は、回転軸６０の下端部のホイール６１の下面に砥石６２が円環状に固着されて構成されており、全体として昇降可能となっている。また、研削装置６には、被加工物を保持する保持テーブル６３を備えている。 (5) Grinding step After the support substrate attaching step, as shown in FIG. 6, for example, the back surface 1 b of the semiconductor wafer 1 is ground using a grinding device 6. The grinding device 6 is configured by a grindstone 62 being fixed in an annular shape on the lower surface of the wheel 61 at the lower end of the rotary shaft 60, and can be moved up and down as a whole. In addition, the grinding device 6 includes a holding table 63 that holds a workpiece.

半導体ウェーハ１の裏面１ｂを上に向けた状態で、支持基板５側を保持テーブル６３において保持する。そして、保持テーブル６３を図６における矢印Ｄ方向に回転させながら、ホイール６１を矢印Ｃ方向に回転させて下降させ、回転する砥石６２を半導体ウェーハ１の裏面１ｂに接触させて押圧することにより裏面１ｂを研削する。   With the back surface 1 b of the semiconductor wafer 1 facing upward, the support substrate 5 side is held by the holding table 63. Then, while rotating the holding table 63 in the direction of arrow D in FIG. 6, the wheel 61 is rotated in the direction of arrow C and lowered, and the rotating grindstone 62 is brought into contact with the back surface 1 b of the semiconductor wafer 1 and pressed. Grind 1b.

このとき、樹脂表面平坦化ステップにおいて樹脂２を切削して平坦面２ｂを形成したため、半導体ウェーハ１の表面１ａから突出したバンプ１１の凹凸の影響を受けることなく研削を行うことができる。したがって、研削面を高精度に平坦面とすることができる。また、樹脂２が完全硬化しているため、半導体ウェーハ１が安定的に支持された状態で研削を行うことができる。   At this time, since the resin 2 is cut to form the flat surface 2b in the resin surface flattening step, grinding can be performed without being affected by the bumps 11 protruding from the surface 1a of the semiconductor wafer 1. Therefore, the ground surface can be made a flat surface with high accuracy. Further, since the resin 2 is completely cured, the grinding can be performed in a state where the semiconductor wafer 1 is stably supported.

このようにして薄化研削を行い、電極１０が露出して半導体ウェーハＷが所望の厚さに形成されると、ホイール６１を上昇させて研削を終了する。研削終了後は、半導体ウェーハ１の表面１ａから樹脂２を剥離することにより、裏面側から電極１０が露出し表面からバンプが突出形成された半導体ウェーハが形成される。   Thinning grinding is performed in this way, and when the electrode 10 is exposed and the semiconductor wafer W is formed to a desired thickness, the wheel 61 is raised and the grinding is finished. After the grinding is completed, the resin 2 is peeled off from the front surface 1a of the semiconductor wafer 1 to form a semiconductor wafer in which the electrodes 10 are exposed from the back surface and bumps are formed protruding from the front surface.

１：半導体ウェーハ
１ａ：表面 １ｂ：裏面
１０：電極 １１：バンプ
２：樹脂 ２ａ：表面 ２ｂ：樹脂面
３ａ、３ｂ：ヒータ
４：バイト切削装置
４０：回転軸 ４１：ホイール ４２：バイト ４３：保持テーブル
５：支持基板
６：研削装置
６０：回転軸 ６１：ホイール ６２：砥石 ６３：保持テーブル 1: Semiconductor wafer 1a: Front surface 1b: Back surface 10: Electrode 11: Bump 2: Resin 2a: Front surface 2b: Resin surface 3a, 3b: Heater 4: Tool cutting device 40: Rotating shaft 41: Wheel 42: Tool 43: Holding table 5: Support substrate 6: Grinding device 60: Rotating shaft 61: Wheel 62: Grinding wheel 63: Holding table

Claims (1)

表面にバンプが形成されたウェーハの裏面側を研削する研削方法であって、
該ウェーハの表面側から、該バンプが埋没するように、外的刺激を受けて硬化する樹脂を該ウェーハの表面に塗布する樹脂塗布ステップと、
該外的刺激を受けて硬化する樹脂を、接着性が残った半硬化状態にさせる樹脂半硬化ステップと、
該樹脂半硬化ステップの後に、該外的刺激を受けて硬化する樹脂の表面側から該バンプに到達しない深さを切削して該外的刺激を受けて硬化する樹脂の表面を平坦化させる樹脂表面平坦化ステップと、
平坦化した該外的刺激を受けて硬化する樹脂の表面に支持基板を圧着するとともに該外的刺激を受けて硬化する樹脂を完全硬化させて、該外的刺激を受けて硬化する樹脂を介して該支持基板を該ウェーハ表面に貼着する支持基板貼着ステップと、
該支持基板に貼着した該ウェーハの裏面側から該ウェーハの薄化研削を行う研削ステップと、
からなるウェーハの研削方法。 A grinding method for grinding the back side of a wafer with bumps formed on the surface,
A resin coating step for applying a resin that is cured by external stimulation to the surface of the wafer so that the bumps are buried from the surface side of the wafer;
A resin semi-curing step for setting the resin that is cured by the external stimulus to a semi-cured state in which adhesiveness remains;
After the resin semi-curing step, a resin that cuts a depth that does not reach the bump from the surface side of the resin that is cured by the external stimulus and flattens the surface of the resin that is cured by the external stimulus. A surface planarization step;
The support substrate is pressure-bonded to the flattened surface of the resin that is cured by the external stimulus, and the resin that is cured by the external stimulus is completely cured, and the resin that is cured by the external stimulus is cured. A support substrate attaching step for attaching the support substrate to the wafer surface;
A grinding step of performing thinning grinding of the wafer from the back side of the wafer attached to the support substrate;
A method for grinding a wafer comprising:
JP2011223714A 2011-10-11 2011-10-11 Grinding method for wafer Pending JP2013084770A (en)

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