JP2013080776A - 窒化物半導体基板 - Google Patents
窒化物半導体基板 Download PDFInfo
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- JP2013080776A JP2013080776A JP2011219182A JP2011219182A JP2013080776A JP 2013080776 A JP2013080776 A JP 2013080776A JP 2011219182 A JP2011219182 A JP 2011219182A JP 2011219182 A JP2011219182 A JP 2011219182A JP 2013080776 A JP2013080776 A JP 2013080776A
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- 239000000758 substrate Substances 0.000 title claims abstract description 92
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 73
- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 239000013078 crystal Substances 0.000 claims abstract description 22
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000011156 evaluation Methods 0.000 description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 229910002601 GaN Inorganic materials 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 210000001520 comb Anatomy 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000700 radioactive tracer Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
- H01L29/155—Comprising only semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
【解決手段】Si単結晶基板Wの一主面上に窒化物からなる複数のバッファ層Bを介して窒化物半導体の活性層Cが形成されている窒化物半導体基板であって、バッファ層Bは少なくとも活性層Cと接する層50の炭素濃度が1E+18atoms/cm3以上1E+20atoms/cm3以下であること、バッファ層Bと活性層Cの界面領域80において全転位密度に対するらせん転位密度の比が0.15以上0.3以下であること、さらにバッファ層Bと活性層Cの界面領域80における全転位密度が15E+9cm−2以下である窒化物半導体基板。
【選択図】図1
Description
図1の層構造を備えた窒化物半導体基板Zを、以下の工程により作製した。共通する製造条件として、直径4インチ、面方位(111)、比抵抗0.02Ωcm、中央1点の厚さ0.62mm、Nタイプ、のSi単結晶基板WをMOCVD装置にセットし、窒化物半導体の原料として、トリメチルガリウム(TMG)、トリメチルアルミニウム(TMA)、NH3、メタンを用い、積層する層に応じてこれらの原料を適時使い分け、気相成長温度を1000℃にして、表1に示す組成と層厚で、各層を気相成長にて形成した。なお、各層の組成、層厚、炭素濃度は、各原料の選定、流量および供給時間の調整により、各値になるよう行った。
実施例1において、基板Wをサファイアとした以外は、同様の規格、製法、評価方法で実施したものを比較例1とした。サファイアは絶縁性基板なので、縦方向耐圧は測定せず、電流コラプスのみ比較した。
表2に示す内容で、評価サンプルを作製し、その他の製法と評価方法は実施例1と同様にした。らせん転位密度比の値は、バッファ層Bの各層の厚さと組成を適時変更することで調整した。全転位密度が表3の各値になるように、また、らせん転位密度比がほぼ0.2になるように、バッファ層の成長温度、膜厚を微調整し、その他は、実施例1と同様の製法、評価を実施した。
全転位密度が表3の各値になるように、また、らせん転位密度比がほぼ0.2になるように、バッファ層Bの成長温度、膜厚を微調整し、その他は、実施例1と同等の製法、評価を実施した。
W Si単結晶基板
B バッファ層(多層構造)
C 窒化物半導体の活性層
1 第一層
2 第二層
3 第三層(対の層)
31 対の一層目
32 対の二層目
40 第四層(第三層を繰り返し積層した層)
50 第五層
60 第六層
70 第七層
80 バッファ層Bと活性層Cとの界面領域
Claims (2)
- Si単結晶基板の一主面上に窒化物からなる複数のバッファ層を介して窒化物半導体の活性層が形成されている窒化物半導体基板であって、前記バッファ層は少なくとも前記活性層と接する層の炭素濃度が1E+18atoms/cm3以上1E+20atoms/cm3以下であること、前記バッファ層と前記活性層の界面領域において全転位密度に対するらせん転位密度の比が0.15以上0.3以下であること、さらに前記バッファ層と前記活性層の界面領域における前記全転位密度が15E+9cm−2以下であることを特徴とする窒化物半導体基板。
- バッファ層と活性層の界面領域における全転位密度が、1.2E+9cm−2以上15E+9cm−2以下であることを特徴とする請求項1に記載の窒化物半導体基板。
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JP2011219182A JP5912383B2 (ja) | 2011-10-03 | 2011-10-03 | 窒化物半導体基板 |
US13/633,473 US8637960B2 (en) | 2011-10-03 | 2012-10-02 | Nitride semiconductor substrate |
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JP2011219182A JP5912383B2 (ja) | 2011-10-03 | 2011-10-03 | 窒化物半導体基板 |
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JP2013080776A true JP2013080776A (ja) | 2013-05-02 |
JP5912383B2 JP5912383B2 (ja) | 2016-04-27 |
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JP (1) | JP5912383B2 (ja) |
Cited By (10)
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JP2014222716A (ja) * | 2013-05-14 | 2014-11-27 | コバレントマテリアル株式会社 | 窒化物半導体基板 |
WO2015008532A1 (ja) * | 2013-07-19 | 2015-01-22 | シャープ株式会社 | 電界効果トランジスタ |
JP2015070064A (ja) * | 2013-09-27 | 2015-04-13 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
JP2016094309A (ja) * | 2014-11-13 | 2016-05-26 | 古河機械金属株式会社 | 単結晶半導体層、自立基板、積層構造体及びこれらの製造方法 |
JP2016201433A (ja) * | 2015-04-09 | 2016-12-01 | 三菱電機株式会社 | ヘテロ接合電界効果型トランジスタおよびその製造方法 |
JP2018172284A (ja) * | 2013-07-30 | 2018-11-08 | 住友化学株式会社 | 半導体基板および半導体基板の製造方法 |
JP2019112302A (ja) * | 2019-04-03 | 2019-07-11 | 古河機械金属株式会社 | 単結晶半導体層、自立基板、積層構造体及びこれらの製造方法 |
JP2021007142A (ja) * | 2018-12-12 | 2021-01-21 | クアーズテック株式会社 | 窒化物半導体基板 |
WO2022259651A1 (ja) | 2021-06-08 | 2022-12-15 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
WO2023063046A1 (ja) * | 2021-10-15 | 2023-04-20 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
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TWI728498B (zh) * | 2018-12-12 | 2021-05-21 | 日商闊斯泰股份有限公司 | 氮化物半導體基板 |
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JP2009065025A (ja) * | 2007-09-07 | 2009-03-26 | Covalent Materials Corp | 化合物半導体基板 |
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JP5133927B2 (ja) * | 2009-03-26 | 2013-01-30 | コバレントマテリアル株式会社 | 化合物半導体基板 |
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JP2011258782A (ja) * | 2010-06-10 | 2011-12-22 | Covalent Materials Corp | 窒化物半導体基板 |
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2011
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2012
- 2012-10-02 US US13/633,473 patent/US8637960B2/en active Active
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JP2010199441A (ja) * | 2009-02-26 | 2010-09-09 | Furukawa Electric Co Ltd:The | 半導体電子デバイスおよび半導体電子デバイスの製造方法 |
JP2011082494A (ja) * | 2009-09-14 | 2011-04-21 | Covalent Materials Corp | 化合物半導体基板 |
JP2012243886A (ja) * | 2011-05-18 | 2012-12-10 | Sharp Corp | 半導体装置 |
Cited By (15)
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US9117743B2 (en) | 2013-05-14 | 2015-08-25 | Covalent Materials Corportion | Nitride semiconductor substrate |
JP2014222716A (ja) * | 2013-05-14 | 2014-11-27 | コバレントマテリアル株式会社 | 窒化物半導体基板 |
US9437726B2 (en) | 2013-07-19 | 2016-09-06 | Sharp Kabushiki Kaisha | Field effect transistor |
CN105264651A (zh) * | 2013-07-19 | 2016-01-20 | 夏普株式会社 | 场效应晶体管 |
WO2015008532A1 (ja) * | 2013-07-19 | 2015-01-22 | シャープ株式会社 | 電界効果トランジスタ |
JP6055918B2 (ja) * | 2013-07-19 | 2016-12-27 | シャープ株式会社 | 電界効果トランジスタ |
JP2018172284A (ja) * | 2013-07-30 | 2018-11-08 | 住友化学株式会社 | 半導体基板および半導体基板の製造方法 |
JP2015070064A (ja) * | 2013-09-27 | 2015-04-13 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
JP2016094309A (ja) * | 2014-11-13 | 2016-05-26 | 古河機械金属株式会社 | 単結晶半導体層、自立基板、積層構造体及びこれらの製造方法 |
JP2016201433A (ja) * | 2015-04-09 | 2016-12-01 | 三菱電機株式会社 | ヘテロ接合電界効果型トランジスタおよびその製造方法 |
JP2021007142A (ja) * | 2018-12-12 | 2021-01-21 | クアーズテック株式会社 | 窒化物半導体基板 |
JP7179706B2 (ja) | 2018-12-12 | 2022-11-29 | クアーズテック株式会社 | 窒化物半導体基板 |
JP2019112302A (ja) * | 2019-04-03 | 2019-07-11 | 古河機械金属株式会社 | 単結晶半導体層、自立基板、積層構造体及びこれらの製造方法 |
WO2022259651A1 (ja) | 2021-06-08 | 2022-12-15 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
WO2023063046A1 (ja) * | 2021-10-15 | 2023-04-20 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
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JP5912383B2 (ja) | 2016-04-27 |
US8637960B2 (en) | 2014-01-28 |
US20130082355A1 (en) | 2013-04-04 |
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