JP2013076120A - Evaporation source and film forming apparatus - Google Patents
Evaporation source and film forming apparatus Download PDFInfo
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- JP2013076120A JP2013076120A JP2011215911A JP2011215911A JP2013076120A JP 2013076120 A JP2013076120 A JP 2013076120A JP 2011215911 A JP2011215911 A JP 2011215911A JP 2011215911 A JP2011215911 A JP 2011215911A JP 2013076120 A JP2013076120 A JP 2013076120A
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- 238000001704 evaporation Methods 0.000 title claims abstract description 212
- 230000008020 evaporation Effects 0.000 title claims abstract description 211
- 239000000463 material Substances 0.000 claims abstract description 235
- 238000007740 vapor deposition Methods 0.000 claims abstract description 204
- 239000000758 substrate Substances 0.000 claims abstract description 119
- 238000010438 heat treatment Methods 0.000 claims abstract description 31
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 26
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 24
- 230000008021 deposition Effects 0.000 claims description 38
- 238000009825 accumulation Methods 0.000 claims description 17
- 238000003860 storage Methods 0.000 claims description 8
- 230000009194 climbing Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 116
- 238000000151 deposition Methods 0.000 description 39
- 230000007246 mechanism Effects 0.000 description 33
- 239000010410 layer Substances 0.000 description 20
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 17
- 238000007789 sealing Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 239000010409 thin film Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- 239000002245 particle Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000012044 organic layer Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 238000001816 cooling Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000002274 desiccant Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000010549 co-Evaporation Methods 0.000 description 3
- 238000005108 dry cleaning Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 241000519995 Stachys sylvatica Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
本発明は、蒸着膜を形成する装置に係り、特に蒸着材料を溶融状態で蒸発させて基板上に薄膜を形成するために有効な成膜装置に関する。 The present invention relates to an apparatus for forming a deposited film, and more particularly to a film forming apparatus effective for forming a thin film on a substrate by evaporating a deposition material in a molten state.
現在、有機ＥＬ素子の開発が活発化しつつある。有機ＥＬディスプレイ（有機ＥＬ表示装置）は液晶やプラズマディスプレイなどに代わる次世代薄膜ディスプレイとして期待されている。現在でも、携帯電話などの携帯機器やカーオーディオに有機ＥＬディスプレイが使用されている。また、有機ＥＬ照明は、すでに製品化がされているＬＥＤ照明の後を追うように開発が進められている。特にＬＥＤ照明は、ほとんど点発光であるために小型化には向いても発熱という制約や光の拡散に工夫が求められる。一方、有機ＥＬ照明は、面発光、形状に制約がない、透明である等の特色を有し、今後住み分けが進むかさらにＬＥＤを超えて普及する可能性があると考えられている。 Currently, development of organic EL elements is being activated. An organic EL display (organic EL display device) is expected as a next-generation thin film display replacing a liquid crystal display or a plasma display. Even now, organic EL displays are used in mobile devices such as mobile phones and car audio. Further, organic EL lighting is being developed so as to follow LED lighting that has already been commercialized. In particular, since LED lighting is mostly point light emission, even if it is suitable for miniaturization, there is a demand for constraining heat generation and light diffusion. On the other hand, organic EL lighting has features such as surface light emission, no restrictions on shape, and transparency, and it is considered that there is a possibility that it will be segregated in the future or spread beyond LEDs.
有機ＥＬ表示装置や照明装置に用いられる有機ＥＬ素子は、有機層を陰極と陽極で挟んだサンドイッチ状構造がガラス板やプラスチック板などの基板上に形成されたものである。この陰極と陽極に電圧を印加することにより各々から電子と正孔が有機層に注入され、それらが再結合して生じる励起子（エキシトン）の失活により発光する。 An organic EL element used in an organic EL display device or a lighting device has a sandwich structure in which an organic layer is sandwiched between a cathode and an anode and is formed on a substrate such as a glass plate or a plastic plate. By applying a voltage to the cathode and the anode, electrons and holes are injected into the organic layer from each, and light is emitted by deactivation of excitons (excitons) generated by recombination.
この有機層は、一般に電子注入層、電子輸送層、発光層、正孔輸送層、正孔注入層を含む多層膜構造になっている。この有機層に使用される有機材料には高分子と低分子がある。このうち低分子材料は、蒸着装置を用いて成膜される。 This organic layer generally has a multilayer structure including an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, and a hole injection layer. Organic materials used for the organic layer include high polymers and low molecules. Among these, a low molecular material is formed into a film using a vapor deposition apparatus.
一般に電極には、陰極として金属材料、陽極として透明導電材料が用いられる。陰極は電子を有機層に注入するために仕事関数が小さい方が有利であり、陽極は正孔注入層や正孔輸送層などの有機層に正孔を注入するために仕事関数が大きいことが必要であるからである。具体的には、陽極にはインジウムスズ酸化物（ＩＴＯ）、酸化スズ（ＳｎＯ2）などが用いられる。陰極には、ＭｇＡｇ（比率が９：１）合金、Ａｌなどが用いられる。これらの陰極材料は成膜装置として蒸着装置を用いる場合が多い。 In general, a metal material is used as the cathode and a transparent conductive material is used as the anode in the electrode. It is advantageous that the cathode has a small work function for injecting electrons into the organic layer, and the anode has a large work function for injecting holes into an organic layer such as a hole injection layer or a hole transport layer. Because it is necessary. Specifically, indium tin oxide (ITO), tin oxide (SnO 2 ), or the like is used for the anode. For the cathode, MgAg (ratio 9: 1) alloy, Al or the like is used. These cathode materials often use a vapor deposition apparatus as a film forming apparatus.
蒸発源のＡｌは溶融された場合、溶融したＡｌが坩堝の内壁面に沿って上昇し、坩堝からあふれ出る、這い上がり現象が発生することが知られている。このＡｌの這い上がり、あるいはＡｌ蒸気浸入により、Ａｌが加熱用ヒーター、あるいはヒーターを支持し電気的絶縁性をもつべき碍子に付着して電気的短絡を生じ、蒸発源故障、破損の原因となる問題があった。また、大型基板の成膜では、基板を垂直にして横方向から蒸着する縦型蒸着が必須になりつつある。 When the evaporation source Al is melted, it is known that the molten Al rises along the inner wall surface of the crucible and overflows from the crucible. Due to the creeping of Al or Al vapor infiltration, Al adheres to the heater for heating or the insulator that supports the heater and should have electrical insulation, causing an electrical short circuit, causing evaporation source failure and damage. There was a problem. Further, in the deposition of a large substrate, vertical deposition in which deposition is performed from the lateral direction with the substrate vertical is becoming essential.
本発明の目的は、アルミの這い上がりを防止して破損が起こりにくい安定な蒸発源を有する成膜装置を提供することである。さらには、縦型蒸着できる成膜装置を提供することである。 An object of the present invention is to provide a film forming apparatus having a stable evaporation source that prevents the aluminum from creeping up and hardly breaks. Furthermore, it is providing the film-forming apparatus which can perform vertical type vapor deposition.
本発明は、少なくとも、坩堝と、加熱部からなり、坩堝は蒸着材料に対する濡れ性の異なる材質からなる２種類の構造からなる坩堝であって、少なくとも開口部は濡れ性の小さい材料からなり、蒸着材料が供給される部分は濡れ性の大きい材料からなる蒸発源及びそれを有する成膜装置で構成される。 The present invention comprises at least a crucible and a heating part, and the crucible is a crucible having two types of structures made of materials having different wettability with respect to the vapor deposition material, and at least the opening is made of a material having low wettability, The portion to which the material is supplied includes an evaporation source made of a material with high wettability and a film forming apparatus having the evaporation source.
アルミの這い上がりを防止して破損が起こりにくい安定な蒸発源を有する成膜装置を提供することができる。 It is possible to provide a film forming apparatus having a stable evaporation source that prevents the aluminum from creeping up and is hardly damaged.
アルミの這い上がりにより、以下の問題がある。
（１）アルミが加熱用ヒーターに付着し電気的短絡を生じ、蒸発源が破損する。
（２）冷却時に蒸着材料（アルミ）の収縮による坩堝壁面への応力により、坩堝が破損する。坩堝が大きいほど応力が大きくなるため、破壊され易い。
Due to the creeping of aluminum, there are the following problems.
(1) Aluminum adheres to the heater and causes an electrical short circuit, which breaks the evaporation source.
(2) The crucible breaks due to stress on the crucible wall surface due to shrinkage of the vapor deposition material (aluminum) during cooling. Since the stress increases as the crucible is larger, it is more likely to be destroyed.
この問題を解決するための、具体的な主な手段は以下のとおりである。 Specific main means for solving this problem are as follows.
蒸着材料（アルミ）の這い上がりは、アルミに対する坩堝材料の濡れ性が大きい場合に発生する。一般に用いられるＰＢＮ（Pyrolytic Boron Nitride）は気相成長法（ＣＶＤ法）によって作られた窒化ホウ素（ＢＮ）である。ＰＢＮはアルミに対して濡れ性が大きいため、這い上がりが起こり易い。この対策として、坩堝開口部に濡れ性の小さい材料の構造体を設ける。 The creeping of the vapor deposition material (aluminum) occurs when the crucible material is highly wettable with respect to aluminum. Generally used PBN (Pyrolytic Boron Nitride) is boron nitride (BN) produced by a vapor deposition method (CVD method). Since PBN has high wettability with respect to aluminum, scooping is likely to occur. As a countermeasure against this, a structure of a material having low wettability is provided in the crucible opening.
また、応力を小さくするため、なるべく小さい坩堝を用いる。小さい坩堝で蒸着材料の安定な蒸発を行うために、蒸着材料供給部には、蒸着材料に対して濡れ性の大きい材質の内側坩堝を設け、這い上がりによる坩堝開口部からの蒸着材料の流失を防止するため、外側には濡れ性の小さい材質の坩堝を用いる。 In order to reduce the stress, a crucible as small as possible is used. In order to carry out stable evaporation of the vapor deposition material with a small crucible, the vapor deposition material supply section is provided with an inner crucible made of a material having high wettability with respect to the vapor deposition material, so that the vapor deposition material can be washed away from the crucible opening due to scooping up. In order to prevent this, a crucible made of a material with low wettability is used on the outside.
小さい坩堝を用いて安定に高レートで長時間蒸着できる成膜装置にするため、蒸着材料を坩堝外部から供給する手段を持たせる。 In order to obtain a film forming apparatus that can stably deposit at a high rate for a long time using a small crucible, a means for supplying the deposition material from the outside of the crucible is provided.
蒸発源の底面と略水平方向に蒸着材料の蒸気を放射させるために、（外側）坩堝開口部を略水平方向になるようにする。縦型蒸着するためには、略水平方向が望ましいが、略水平〜６０°であればよい。坩堝開口部の向き（角度）とは、坩堝の底面部と開口部中心を結ぶ線が図示しない基板保持移動機構により保持された基板１５の表面の法線方向となす角とする。 In order to radiate vapor of the vapor deposition material in a substantially horizontal direction with respect to the bottom surface of the evaporation source, the (outer) crucible opening is made to be in a substantially horizontal direction. In order to perform vertical deposition, a substantially horizontal direction is desirable, but it may be approximately horizontal to 60 °. The direction (angle) of the crucible opening is defined as the angle between the line connecting the bottom of the crucible and the center of the opening and the normal direction of the surface of the substrate 15 held by a substrate holding and moving mechanism (not shown).
具体的手段及びその効果は、以下の通りである。 Specific means and effects thereof are as follows.
＜具体的手段１＞
蒸着材料（アルミ）に対する濡れ性の異なる材質からなる２種類の構造からなる坩堝で、少なくとも開口部に濡れ性の小さい材料（グラファイト、アルミナ、ＳｉＯ2、ＢＮ、ジルコニア等）の構造体を配し、蒸着材料が供給される部分は濡れ性の大きい材料（ＰＢＮなど）からなる。これにより、坩堝開口部側がアルミに対して濡れ性の小さい材料で構成されているので、坩堝外への這い上がりが発生しにくい。そのため、破損が起こりにくい蒸発源を提供することができる。また、蒸着材料が供給される部分が濡れ性の大きい材料からなるので、蒸着材料が安定に蒸発し安定な成膜ができる。
<Specific means 1>
Crucible made of 2 types of structures made of different wettability material for vapor deposition material (aluminum), arranged structures of at least the opening wettability small material (graphite, alumina, SiO 2, BN, zirconia) The portion to which the vapor deposition material is supplied is made of a material with high wettability (such as PBN). As a result, the crucible opening side is made of a material having low wettability with respect to aluminum, so that it is difficult for the crucible to go out of the crucible. Therefore, it is possible to provide an evaporation source that is not easily damaged. In addition, since the portion to which the vapor deposition material is supplied is made of a material having high wettability, the vapor deposition material can be stably evaporated to form a stable film.
＜具体的手段２＞
坩堝開口部の向きが−５〜６０度である。これにより、蒸着材料（アルミ）を坩堝外部から供給するので、大型基板で必須な基板縦置きで水平方向に蒸着する縦型蒸着が、安定に高レートで長時間蒸着できる。
<Specific means 2>
The direction of the crucible opening is -5 to 60 degrees. As a result, since the vapor deposition material (aluminum) is supplied from the outside of the crucible, the vertical type vapor deposition in the horizontal direction with the vertical substrate required for a large substrate can be stably deposited at a high rate for a long time.
＜具体的手段３＞
蒸着材料（Ａｌ）を坩堝外部から供給する手段を有する。これにより、坩堝が小さくできるので、冷却時応力を小さくでき、破損が起こりにくい。また蒸着材料が安定に蒸発する。
<Specific means 3>
Means for supplying the vapor deposition material (Al) from the outside of the crucible. Thereby, since the crucible can be made small, the stress at the time of cooling can be made small and damage is hard to occur. Further, the vapor deposition material is stably evaporated.
＜具体的手段４＞
Ａｌ供給手段が坩堝蒸発の反対側にある。これにより、蒸発の邪魔にならず、基板への一様な蒸着ができる。
<Specific means 4>
Al supply means is on the opposite side of the crucible evaporation. Thereby, it is possible to perform uniform vapor deposition on the substrate without disturbing evaporation.
本発明は、以下、実施例を用いて本発明の実施形態を詳細に説明する。尚、実施形態を説明するための全図において、同一機能を有するものは同一符号を付け、その繰り返しの説明は省略する。 In the following, embodiments of the present invention will be described in detail using examples. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof will be omitted.
図１は本実施例の成膜装置の蒸発源１００の概略断面図である。図１（Ａ）〜（Ｄ）の全ての蒸発源で二重坩堝（外側坩堝１、内側坩堝２）を採用している。なお、蒸発源は蒸着源ともいう。本発明においては、各坩堝において、坩堝外へ向って開口している外枠付近の部分を開口部と定義し、開口部に対向する部分を底面部といい、開口部と底面部の間に存在する部分を側面部という。 FIG. 1 is a schematic cross-sectional view of an evaporation source 100 of the film forming apparatus of this embodiment. Double crucibles (outer crucible 1 and inner crucible 2) are employed in all the evaporation sources in FIGS. Note that the evaporation source is also referred to as an evaporation source. In the present invention, in each crucible, a portion in the vicinity of the outer frame that opens toward the outside of the crucible is defined as an opening, and a portion that faces the opening is referred to as a bottom surface, and between the opening and the bottom surface. The existing part is called a side part.
図１（Ａ）は外側坩堝の開口部９が略水平方向を向いた（外側坩堝の開口部９の向きと、図示しない基板保持移動機構により保持された基板１５の表面の法線方向とが略０度である）蒸発源１００の例である。図１（Ａ）の蒸発源は、坩堝つば８を有し、蒸着材料５の蒸気が坩堝外に向かって放射される外側坩堝１、内側坩堝２、加熱部（ヒーター）３、リフレクタ４、蒸着材料５、外筒６、外側坩堝の開口部９からなる。内側坩堝２は蒸着材料５を収容する部分なので収容部とも言う。 FIG. 1A shows that the opening 9 of the outer crucible faces in a substantially horizontal direction (the direction of the opening 9 of the outer crucible and the normal direction of the surface of the substrate 15 held by a substrate holding and moving mechanism (not shown)). This is an example of the evaporation source 100 (which is approximately 0 degrees). The evaporation source in FIG. 1A has a crucible collar 8, and an outer crucible 1, an inner crucible 2, a heating unit (heater) 3, a reflector 4, and a vapor deposition, from which vapor of the vapor deposition material 5 is emitted toward the outside of the crucible. It consists of the material 5, the outer cylinder 6, and the opening part 9 of an outer crucible. Since the inner crucible 2 is a part for accommodating the vapor deposition material 5, it is also referred to as an accommodating part.
図１においては坩堝７を外側坩堝１と内側坩堝２の二重坩堝で構成する。外筒６と外側坩堝１に囲まれ加熱部３の存在する領域を加熱室１０と呼ぶ。本実施例では、蒸着材料５はアルミ（Ａｌ）として説明する。坩堝７は蒸着材料５に対する濡れ性の異なる材質からなる２種類の構造からなる坩堝であって、外側坩堝１は、この場合外側坩堝の開口部９をも形成しており、Ａｌに対する濡れ性の小さい材料からなり、蒸着材料５が供給される内側坩堝２は濡れ性の大きい材料からなる。Ａｌは高温で金属と反応して合金を作るため、坩堝はセラミックなどの絶縁体で製作される。例えばＰＢＮ（Pyrolytic Boron Nitride）は気相成長法（ＣＶＤ法）によって作られた窒化ホウ素（ＢＮ）である。濡れ性の大きい内側坩堝２はＰＢＮで形成され、濡れ性の小さい外側坩堝１は濡れ性の小さいグラファイト、アルミナ、ＳｉＯ2、ＢＮ、ジルコニア等で形成される。 In FIG. 1, the crucible 7 is composed of a double crucible of an outer crucible 1 and an inner crucible 2. A region surrounded by the outer cylinder 6 and the outer crucible 1 and having the heating unit 3 is referred to as a heating chamber 10. In this embodiment, the vapor deposition material 5 is described as aluminum (Al). The crucible 7 is a crucible having two kinds of structures made of materials having different wettability with respect to the vapor deposition material 5, and the outer crucible 1 also forms an opening 9 of the outer crucible in this case, and has a wettability with respect to Al. The inner crucible 2 made of a small material and supplied with the vapor deposition material 5 is made of a material having high wettability. Since Al reacts with metal at high temperature to form an alloy, the crucible is made of an insulator such as ceramic. For example, PBN (Pyrolytic Boron Nitride) is boron nitride (BN) produced by a vapor deposition method (CVD method). The inner crucible 2 with high wettability is formed of PBN, and the outer crucible 1 with low wettability is formed of graphite, alumina, SiO 2 , BN, zirconia or the like with low wettability.
また、内側坩堝の開口部３０の向きと、蒸着材料５が坩堝外に向かって放射される外側坩堝の開口部９の向きが異なる。言い換えると、内側坩堝の開口部３０の向きと、蒸着材料５が坩堝外に向かって放射される外側坩堝の開口部９の向きとが略９０度（８５°〜９５°の範囲であれば良い）の関係を有する。さらに、内側坩堝２の底面部と、外側坩堝１の側面部が接しているともいえる。 Further, the direction of the opening 30 of the inner crucible is different from the direction of the opening 9 of the outer crucible from which the vapor deposition material 5 is emitted toward the outside of the crucible. In other words, the direction of the opening 30 of the inner crucible and the direction of the opening 9 of the outer crucible from which the vapor deposition material 5 is radiated out of the crucible may be approximately 90 degrees (85 ° to 95 °). ). Furthermore, it can be said that the bottom surface portion of the inner crucible 2 is in contact with the side surface portion of the outer crucible 1.
なお、図１では内側坩堝２の側面部と、外側坩堝１の底面部が接しているが、ここは接することなく、内側坩堝２の側面部と外側坩堝１の底面部とが離れていても本発明で想定する効果を達成できる。 In FIG. 1, the side surface portion of the inner crucible 2 and the bottom surface portion of the outer crucible 1 are in contact with each other, but the side surface portion of the inner crucible 2 and the bottom surface portion of the outer crucible 1 are not in contact with each other. The effect assumed in the present invention can be achieved.
ここで、それぞれの坩堝の開口部の向き（角度）とは、開口部の成す平均的な面に対する法線が水平方向（図示しない基板保持移動機構により保持された基板１５の表面の法線方向）となす角θとする。これにより、蒸着材料５が坩堝外に向かって放射される外側坩堝の開口部９の向きが略水平であっても、内側坩堝２に蒸着材料５を供給保持することができる。ここで、外側坩堝１は円筒状であり、水平方向から見た内側坩堝２の断面形状は外側坩堝１の円筒内面に沿うような半円のような形状である。 Here, the direction (angle) of the opening of each crucible means that the normal to the average plane formed by the openings is horizontal (the normal direction of the surface of the substrate 15 held by a substrate holding and moving mechanism (not shown)). ) And the angle θ. Thereby, even if the direction of the opening 9 of the outer crucible from which the vapor deposition material 5 is radiated toward the outside of the crucible is substantially horizontal, the vapor deposition material 5 can be supplied and held in the inner crucible 2. Here, the outer crucible 1 is cylindrical, and the cross-sectional shape of the inner crucible 2 viewed from the horizontal direction is a semicircular shape along the inner surface of the outer crucible 1.
図１において、図示しない電源からの電力により高温になった加熱部３により内側坩堝２に入っている蒸着材料５であるＡｌが融点６６０℃以上に加熱されて溶融状態となる。
リフレクタ４により加熱部３からの輻射熱を反射させて加熱部３あるいは内側坩堝２ないし外側坩堝１に戻し発生した熱ができるだけ無駄なくＡｌの加熱に用いられるようにしている。
In FIG. 1, Al which is the vapor deposition material 5 contained in the inner crucible 2 is heated to a melting point of 660 ° C. or more by a heating unit 3 heated to high temperature by power from a power source (not shown) to be in a molten state.
The heat generated by reflecting the radiant heat from the heating unit 3 by the reflector 4 and returning to the heating unit 3 or the inner crucible 2 or the outer crucible 1 is used for heating Al as much as possible.
加熱部３は蒸着材料５が供給されている内側坩堝２の存在する付近を集中的に加熱するよう配置されている。これらは外筒６の中に納まり、外側坩堝１は坩堝つば８で外筒６に接している。これらが高真空に維持された図示されない真空チャンバの中に設置されている。外筒６は図示されない水冷などの冷却機構により冷却され、真空チャンバ内への余計な放出ガスを抑制したり、真空チャンバ自身の高温化を抑制している。内側坩堝２の中の溶融状態のＡｌからはＡｌ蒸気が発生し外側坩堝１内に満たされ、外側坩堝の開口部９からＡｌ蒸気が噴出される。その噴出したＡｌ蒸気は垂直に立てられた基板１５に吹き付けられ蒸着される（縦型蒸着される）。 The heating unit 3 is arranged so as to intensively heat the vicinity of the inner crucible 2 to which the vapor deposition material 5 is supplied. These are housed in the outer cylinder 6, and the outer crucible 1 is in contact with the outer cylinder 6 with a crucible collar 8. These are installed in a vacuum chamber (not shown) maintained at a high vacuum. The outer cylinder 6 is cooled by a cooling mechanism such as water cooling (not shown) to suppress unnecessary discharge gas into the vacuum chamber and to prevent the vacuum chamber itself from increasing in temperature. Al vapor is generated from the molten Al in the inner crucible 2 and filled in the outer crucible 1, and Al vapor is ejected from the opening 9 of the outer crucible. The ejected Al vapor is sprayed and deposited on the vertically standing substrate 15 (vertical deposition).
この蒸発源１００のＡｌは溶融された場合、溶融したＡｌが内側坩堝２の内壁面に沿って上昇し、坩堝からあふれ出る、這い上がり現象が発生することが知られている。実験の結果、１４００℃では、溶融Ａｌが濡れ性の大きい内側坩堝２の内壁を這い上がり、外側坩堝１の内壁にこぼれる。しかし、外側坩堝１は、Ａｌに対する濡れ性が小さいため、外側坩堝の開口部９までは至らずにせき止められた。また、内側坩堝２の濡れ性が大きいため、Ａｌを安定に蒸発させることができる。また、内側坩堝２が外側坩堝の開口部９に直交して、奥まった位置に配置されているため、Ａｌのスプラッシュが発生した場合でも、外側坩堝１の内壁に衝突するだけで、基板１５へは到達しないので、一様で安定な成膜ができる。 It is known that when the Al of the evaporation source 100 is melted, the molten Al rises along the inner wall surface of the inner crucible 2 and overflows from the crucible. As a result of the experiment, at 1400 ° C., molten Al scoops up the inner wall of the inner crucible 2 having high wettability and spills on the inner wall of the outer crucible 1. However, the outer crucible 1 was dammed without reaching the opening 9 of the outer crucible because of its low wettability to Al. Moreover, since the wettability of the inner crucible 2 is large, Al can be stably evaporated. In addition, since the inner crucible 2 is arranged at a position that is perpendicular to the opening 9 of the outer crucible, even when an Al splash occurs, the inner crucible 2 only hits the inner wall of the outer crucible 1 to the substrate 15. Therefore, uniform and stable film formation can be achieved.
以上のように、外側坩堝の開口部９側がアルミに対して濡れ性の小さい材料で構成されているので、坩堝外への這い上がりが発生しにくい。これにより、破損が起こりにくい蒸発源１００を提供することができる。また、蒸着材料５が供給される部分が濡れ性の大きい材料からなるので、蒸着材料５が安定に蒸発し安定な成膜ができる。これにより、Ａｌの這い上がりを防止できて故障、破損が起こりにくく安定に成膜できる蒸発源１００を有する成膜装置を安価に提供することができる。さらに、基板１５を縦に置いて水平方向に蒸着する縦型蒸着に適した成膜装置を提供することができる。 As described above, the opening 9 side of the outer crucible is made of a material having low wettability with respect to aluminum, so that it is difficult for the crucible to go out of the crucible. Thereby, it is possible to provide the evaporation source 100 which is not easily damaged. In addition, since the portion to which the vapor deposition material 5 is supplied is made of a material having high wettability, the vapor deposition material 5 is stably evaporated and a stable film can be formed. Thereby, it is possible to provide a film forming apparatus having the evaporation source 100 that can prevent the creeping of Al and can form a film stably without causing failure or breakage at low cost. Furthermore, it is possible to provide a film forming apparatus suitable for vertical deposition in which the substrate 15 is placed vertically and deposited in the horizontal direction.
図１（Ａ）では蒸発源１００の外側坩堝の開口部９の向きと、図示しない基板保持移動機構により保持された基板１５の表面の法線方向とが略水平となっている。 In FIG. 1A, the direction of the opening 9 of the outer crucible of the evaporation source 100 and the normal direction of the surface of the substrate 15 held by a substrate holding and moving mechanism (not shown) are substantially horizontal.
図１（Ｂ）は、図１（Ａ）の蒸発源１００をθ＝４５°傾けて配置した蒸発源１００である。この場合でも垂直に配置した基板１５に成膜することが可能である。このように、傾けた場合、Ａｌの這い上がりによる外側坩堝の開口部９からの流失を防止し易い。しかし、６０°を越える角度になると、利用効率が大幅に低下するので、６０°以下であることが望ましい。さらに望ましくは、略水平に配置することである。このとき最も利用効率を高くすることができるし、分布も一様にし易い。 FIG. 1B shows an evaporation source 100 in which the evaporation source 100 of FIG. 1A is inclined at θ = 45 °. Even in this case, it is possible to form a film on the vertically arranged substrate 15. In this way, when tilted, it is easy to prevent the loss from the opening 9 of the outer crucible due to the rising of Al. However, if the angle exceeds 60 °, the utilization efficiency is greatly reduced. More preferably, it is arranged substantially horizontally. At this time, the utilization efficiency can be maximized and the distribution is easily uniform.
一方、蒸発源１００を、外側坩堝の開口部９の向きと、図示しない基板保持移動機構により保持された基板１５の表面の法線方向とが５°程度だけマイナス方向に角度をもつように設置したとしても、基板１５を縦に置いて水平方向に蒸着する縦型蒸着が可能である。 On the other hand, the evaporation source 100 is set so that the direction of the opening 9 of the outer crucible and the normal direction of the surface of the substrate 15 held by a substrate holding and moving mechanism (not shown) have an angle of minus about 5 °. Even in such a case, vertical deposition in which the substrate 15 is placed vertically and deposited in the horizontal direction is possible.
図１（Ｃ）は、内側坩堝の開口部３０の向きを外側坩堝の開口部９の向きと一致させた例である。この場合円筒形同士で製作が容易である。図１（Ｄ）は、内側坩堝の開口部３０の向きを、基板保持移動機構により保持された基板１５の表面の法線方向と垂直にした例である。しかし、スプラッシュを防げる利点はなくなる。図１（Ｃ）〜（Ｄ）においても、基板１５を縦に置いて水平方向に蒸着する縦型蒸着に適した成膜装置を提供することができる。 FIG. 1C shows an example in which the direction of the opening 30 of the inner crucible is matched with the direction of the opening 9 of the outer crucible. In this case, the cylindrical shapes are easy to manufacture. FIG. 1D shows an example in which the direction of the opening 30 of the inner crucible is perpendicular to the normal direction of the surface of the substrate 15 held by the substrate holding and moving mechanism. However, the advantage of preventing splash is lost. 1C to 1D, it is possible to provide a film forming apparatus suitable for vertical deposition in which the substrate 15 is placed vertically and deposited in the horizontal direction.
以上のように、実施例１に拠れば、外側坩堝の開口部９側がアルミに対して濡れ性の小さい材料で構成されているので、坩堝外への這い上がりが発生しにくい。これにより、破損が起こりにくい蒸発源１００を提供することができる。また、蒸着材料５が供給される部分が濡れ性の大きい材料からなるので、蒸着材料５が安定に蒸発し安定な成膜ができる。これにより、Ａｌの這い上がりを防止できて故障、破損が起こりにくく安定に成膜できる蒸発源１００を有する成膜装置を安価に提供することができる。さらに、基板１５を縦に置いて水平方向に蒸着する縦型蒸着に適した成膜装置を提供することができる。 As described above, according to the first embodiment, the opening 9 side of the outer crucible is made of a material having low wettability with respect to aluminum, so that it is difficult for the crucible to go out of the crucible. Thereby, it is possible to provide the evaporation source 100 which is not easily damaged. In addition, since the portion to which the vapor deposition material 5 is supplied is made of a material having high wettability, the vapor deposition material 5 is stably evaporated and a stable film can be formed. Thereby, it is possible to provide a film forming apparatus having the evaporation source 100 that can prevent the creeping of Al and can form a film stably without causing failure or breakage at low cost. Furthermore, it is possible to provide a film forming apparatus suitable for vertical deposition in which the substrate 15 is placed vertically and deposited in the horizontal direction.
これまで、坩堝の材質に関して蒸着材料に対する「濡れ性」の異なる材質からなる２種類の構造からなる坩堝であると記述した。この「濡れ性」は濡れの程度のことであり、固体上に液体を置いたときの広がり方で表すことができる。図１４は固体上に置いた液滴の断面形状を模式的に描いたもので、液体と固体はある角度θで接触している。この角度を接触角といい、接触角が小さいほど（図１４（ａ）より図１４（ｂ）の方が）「濡れ性が大きい」（あるいは、濡れ性が良い、あるいは、濡れ性が高い、あるいは、濡れ性が強い）という。ここで、例えば上記「固体」が坩堝であり、「液体、液滴」が溶融状態のＡｌなどの蒸着材料である。溶融Ａｌに対する接触角の例を以下に示す。濡れ性の大きい材質の例として、窒化ホウ素（ＢＮ）は、０°である。濡れ性の小さい材質の例として、グラファイトは１２０°〜３０°のものがあり、アルミナは４５〜７５°、ＳｉＯ2は３９°、ジルコニアは１４５°〜５９°である。したがって、外側坩堝１の少なくとも表面は、溶融Ａｌに対する接触角が３０°以上の物質からなる。さらに、内側坩堝２の少なくとも表面は溶融Ａｌに対する接触角が３０°未満、望ましくは１０°以下、さらに望ましくは１°以下の物質からなる。 So far, the crucible material has been described as a crucible having two types of structures made of materials having different “wetting properties” with respect to the vapor deposition material. This “wetting property” is the degree of wetting, and can be expressed by how it spreads when a liquid is placed on a solid. FIG. 14 schematically shows a cross-sectional shape of a droplet placed on a solid, and the liquid and the solid are in contact with each other at an angle θ. This angle is referred to as a contact angle, and the smaller the contact angle (in FIG. 14 (b) than in FIG. 14 (b)), the greater the wettability (or better wettability or higher wettability. Or, the wettability is strong). Here, for example, the “solid” is a crucible, and the “liquid, droplet” is a vapor deposition material such as Al in a molten state. Examples of contact angles for molten Al are shown below. As an example of a material having high wettability, boron nitride (BN) is 0 °. As an example of a material having low wettability, graphite has a temperature of 120 ° to 30 °, alumina is 45 ° to 75 °, SiO 2 is 39 °, and zirconia is 145 ° to 59 °. Therefore, at least the surface of the outer crucible 1 is made of a material having a contact angle with molten Al of 30 ° or more. Furthermore, at least the surface of the inner crucible 2 is made of a material having a contact angle with molten Al of less than 30 °, desirably 10 ° or less, and more desirably 1 ° or less.
図２は実施例２の成膜装置の蒸発源１００の概略断面図である。実施例２では坩堝７は単体で備えられている。坩堝７の底面部、２つの側面部で囲まれる空間を収容部４０とする。 FIG. 2 is a schematic cross-sectional view of the evaporation source 100 of the film forming apparatus according to the second embodiment. In the second embodiment, the crucible 7 is provided alone. A space surrounded by the bottom surface portion and the two side surface portions of the crucible 7 is referred to as a housing portion 40.
図２（Ａ）において、蒸発源１００は、蒸着材料（Ａｌ）５が供給される例えばＰＢＮ製の坩堝７と例えばアルミナ製のノズル１１からなる。ＰＢＮはＡｌに対する濡れ性が大きく、坩堝の開口部３１付近まで這い上がる。ここでは加熱部３が坩堝の開口部３１から遠い位置に配置されているので、蒸着材料５の溶融表面に比べて温度が低下している。さらに、Ａｌに対して濡れ性の小さいアルミナからなるノズル１１を坩堝の開口部３１に配置したことにより、Ａｌはこれ以上這い上がらず、Ａｌが坩堝外にこぼれ落ちることはない。なお、本発明においてはノズル１１を坩堝の開口部３１の一部とみなしても良い。 In FIG. 2A, the evaporation source 100 includes a crucible 7 made of, for example, PBN to which a vapor deposition material (Al) 5 is supplied and a nozzle 11 made of, for example, alumina. PBN has a high wettability to Al and crawls up to the vicinity of the opening 31 of the crucible. Here, since the heating unit 3 is disposed at a position far from the opening 31 of the crucible, the temperature is lower than the melting surface of the vapor deposition material 5. Furthermore, since the nozzle 11 made of alumina having low wettability with respect to Al is arranged in the opening 31 of the crucible, the Al does not crawl any more and the Al does not spill out of the crucible. In the present invention, the nozzle 11 may be regarded as a part of the opening 31 of the crucible.
図２（Ｂ）は、図２（Ａ）の坩堝７とノズル１１の形状を変えたものである。坩堝７には、支持構造１３が備わり、坩堝７の内側で濡れ性の小さいノズル１１を支持している。 FIG. 2 (B) is obtained by changing the shape of the crucible 7 and the nozzle 11 of FIG. 2 (A). The crucible 7 is provided with a support structure 13 and supports the nozzle 11 having low wettability inside the crucible 7.
図２（Ｃ）は、図２（Ｂ）とは異なる坩堝７の支持構造１３の例である。これらにより、濡れ性の小さいノズル１１が坩堝７内側で溶融Ａｌの這い上がりをせき止めるので、坩堝外への這い上がりが防止できる。 FIG. 2C is an example of the support structure 13 of the crucible 7 different from that in FIG. As a result, the nozzle 11 with low wettability prevents the molten Al from scooping up inside the crucible 7, so that scooping out of the crucible can be prevented.
これら図２（Ａ）〜（Ｃ）は、図１（Ｂ）〜（Ｄ）のように、坩堝を傾けて配置することにより、基板１５を縦に置いて水平方向（あるいは斜め方向）に蒸着する縦型蒸着のできる成膜装置を提供することができる。 2 (A) to 2 (C), as shown in FIGS. 1 (B) to 1 (D), by placing the crucible at an angle, the substrate 15 is placed vertically and deposited in the horizontal direction (or oblique direction). It is possible to provide a film forming apparatus capable of vertical deposition.
以上のように、実施例２に拠れば、坩堝の開口部３１側がアルミに対して濡れ性の小さい材料で構成されているので、坩堝外への這い上がりが発生しにくい。これにより、破損が起こりにくい蒸発源１００を提供することができる。また、蒸着材料５が供給される部分が濡れ性の大きい材料からなるので、蒸着材料５が安定に蒸発し安定な成膜ができる。
これにより、Ａｌの這い上がりを防止できて故障、破損が起こりにくく安定に成膜できる蒸発源１００を有する成膜装置を安価に提供することができる。さらに、基板１５を縦に置いて水平方向に蒸着する縦型蒸着のできる成膜装置を提供することができる。
As described above, according to the second embodiment, the opening 31 side of the crucible is made of a material having low wettability with respect to aluminum. Thereby, it is possible to provide the evaporation source 100 which is not easily damaged. In addition, since the portion to which the vapor deposition material 5 is supplied is made of a material having high wettability, the vapor deposition material 5 is stably evaporated and a stable film can be formed.
Thereby, it is possible to provide a film forming apparatus having the evaporation source 100 that can prevent the creeping of Al and can form a film stably without causing failure or breakage at low cost. Furthermore, it is possible to provide a film forming apparatus capable of performing vertical deposition in which the substrate 15 is placed vertically and deposited in the horizontal direction.
図３は実施例３の成膜装置の蒸発源１００の概略断面図である。本実施例の特徴は、実施例２とは異なり、濡れ性の小さい外側坩堝１の内側に、蒸着材料５の供給された濡れ性の大きい内側坩堝２が配置していることである。また、加熱部３は内側坩堝２の存在する高さまでの範囲に配置されている。これにより、外側坩堝１の上部は無駄に加熱されることなく、Ａｌの這い上がりもし難くしている。内側坩堝２のＡｌは内側坩堝２の内壁を這い上がるが、濡れ性の小さい外側坩堝１の内壁には這い上がらない。外側坩堝１は図３に描かれているより短くてもよいことは言うまでもない。図３は、図１（Ｂ）〜（Ｄ）のように、坩堝を傾けて配置することにより、基板１５を縦に置いて水平方向（あるいは斜め方向）に蒸着する縦型蒸着のできる成膜装置を提供することができる。 FIG. 3 is a schematic cross-sectional view of the evaporation source 100 of the film forming apparatus according to the third embodiment. Unlike the second embodiment, this embodiment is characterized in that the inner crucible 2 having a high wettability supplied with the vapor deposition material 5 is disposed inside the outer crucible 1 having a low wettability. Moreover, the heating part 3 is arrange | positioned in the range to the height in which the inner crucible 2 exists. Thereby, the upper part of the outer crucible 1 is not heated unnecessarily, and it is difficult to scoop up Al. Al in the inner crucible 2 scoops up the inner wall of the inner crucible 2 but does not scoop up on the inner wall of the outer crucible 1 having low wettability. It goes without saying that the outer crucible 1 may be shorter than that depicted in FIG. In FIG. 3, as shown in FIGS. 1B to 1D, a film can be formed by vertical deposition in which the crucible is tilted and the substrate 15 is placed vertically to deposit in the horizontal direction (or oblique direction). An apparatus can be provided.
本実施例においても、外側坩堝の開口部９側がアルミに対して濡れ性の小さい材料で構成されているので、坩堝外への這い上がりが発生しにくい。これにより、破損が起こりにくい蒸発源１００を提供することができる。また、蒸着材料５が供給される部分が濡れ性の大きい材料からなるので、蒸着材料５が安定に蒸発し安定な成膜ができる。これにより、Ａｌの這い上がりを防止できて故障、破損が起こりにくく安定に成膜できる蒸発源１００を有する成膜装置を安価に提供することができる。さらに、基板１５を縦に置いて水平方向に蒸着する縦型蒸着のできる成膜装置を提供することができる。 Also in the present embodiment, the opening 9 side of the outer crucible is made of a material having low wettability with respect to aluminum, so that the scooping out of the crucible hardly occurs. Thereby, it is possible to provide the evaporation source 100 which is not easily damaged. In addition, since the portion to which the vapor deposition material 5 is supplied is made of a material having high wettability, the vapor deposition material 5 is stably evaporated and a stable film can be formed. Thereby, it is possible to provide a film forming apparatus having the evaporation source 100 that can prevent the creeping of Al and can form a film stably without causing failure or breakage at low cost. Furthermore, it is possible to provide a film forming apparatus capable of performing vertical deposition in which the substrate 15 is placed vertically and deposited in the horizontal direction.
図４は実施例４の成膜装置の蒸発源１００の概略断面図である。本実施例の特徴は、濡れ性の小さい外側坩堝１と、蒸着材料５の供給された濡れ性の大きい内側坩堝２からなる坩堝７の容量が小さく、内側坩堝２に供給される蒸着材料５が少量であり、かつ、図示しない蒸着材料蓄積部と蒸着材料供給路１２からなる蒸着材料供給手段を設けたことである。外側坩堝１は例えば、アルミナ製で、半径約１.５（cm）、高さ約３（cm）、容量約２１（cc）である。内側坩堝２は例えば、ＰＢＮ製で、半径約１.２（cm）、高さ約１.５（cm）、容量約７（cc）である。内側坩堝２内の蒸着材料（Ａｌ）５は例えば、溶融状態で高さ約０.０５〜０.５（cm）である。蒸着材料５は、図示しない蒸着材料蓄積部からＡｌ粒を内側坩堝２に供給され蒸着材料供給路１２を経て、内側坩堝２に供給される。この蒸着材料供給手段を有することにより、小容量の坩堝７で大量の蒸着を行うことができる。
蒸着材料５が少量の場合、内側坩堝２の濡れ性が小さい場合、蒸着材料５が玉状になり易い。蒸着材料５が玉状になった場合は、蒸発量が安定せず蒸着流量（あるいは蒸着レート）が時間的に変化するため、一様膜厚の成膜が困難である。本実施例の場合、内側坩堝２は濡れ性が大きいので、蒸着材料５が少量の場合でも、玉状になることなく表面を充分濡らすので、安定な蒸着を行うことができる。また、蒸着材料５の溶融表面と外側坩堝の開口部９との長さが時間的にほぼ一定なので、この部分に対応するコンダクタンスは時間的に変らず、一定蒸着レートで安定な蒸着を行うことができる。小容量なため軽量なので、基板１５に対して走査して成膜する機構も軽量化できる。図４は、若干の寸法を変えて、図１（Ｂ）〜（Ｄ）のように、坩堝を傾けて配置することにより、基板１５を縦に置いて水平方向（あるいは斜め方向）に蒸着する縦型蒸着のできる成膜装置を提供することができる。
FIG. 4 is a schematic cross-sectional view of the evaporation source 100 of the film forming apparatus according to the fourth embodiment. The feature of this embodiment is that the capacity of the crucible 7 consisting of the outer crucible 1 with low wettability and the inner crucible 2 with high wettability supplied with the vapor deposition material 5 is small, and the vapor deposition material 5 supplied to the inner crucible 2 is The vapor deposition material supply means including a vapor deposition material storage unit and a vapor deposition material supply path 12 (not shown) is provided. The outer crucible 1 is made of alumina, for example, has a radius of about 1.5 (cm), a height of about 3 (cm), and a capacity of about 21 (cc). The inner crucible 2 is made of, for example, PBN, has a radius of about 1.2 (cm), a height of about 1.5 (cm), and a capacity of about 7 (cc). The vapor deposition material (Al) 5 in the inner crucible 2 has a height of about 0.05 to 0.5 (cm) in a molten state, for example. The vapor deposition material 5 is supplied to the inner crucible 2 through the vapor deposition material supply path 12 by supplying Al particles to the inner crucible 2 from a vapor deposition material accumulation unit (not shown). By having this vapor deposition material supply means, a large amount of vapor deposition can be performed with a small-capacity crucible 7.
When the amount of the vapor deposition material 5 is small, when the wettability of the inner crucible 2 is small, the vapor deposition material 5 tends to be ball-shaped. When the vapor deposition material 5 has a ball shape, the evaporation amount is not stable and the vapor deposition flow rate (or vapor deposition rate) changes with time, so that it is difficult to form a uniform film thickness. In the case of the present embodiment, the inner crucible 2 has high wettability, so that even when the deposition material 5 is a small amount, the surface is sufficiently wetted without forming a ball shape, so that stable deposition can be performed. In addition, since the length of the molten surface of the vapor deposition material 5 and the opening 9 of the outer crucible is substantially constant in time, conductance corresponding to this portion does not change with time, and stable vapor deposition is performed at a constant vapor deposition rate. Can do. Since it has a small capacity and is lightweight, a mechanism for forming a film by scanning the substrate 15 can also be reduced in weight. In FIG. 4, by slightly changing the dimensions, the crucible is inclined and arranged as shown in FIGS. 1B to 1D, so that the substrate 15 is vertically placed and deposited in the horizontal direction (or oblique direction). A film forming apparatus capable of vertical deposition can be provided.
本実施例により、外側坩堝の開口部９側がアルミに対して濡れ性の小さい材料で構成されているので、坩堝外への這い上がりが発生しにくい。これにより、破損が起こりにくい蒸発源１００を提供することができる。また、蒸着材料５が供給される部分が濡れ性の大きい材料からなり、坩堝７のコンダクタンスを時間的にほぼ一定にできるので、蒸着材料５が安定に蒸発し安定した蒸着レートで成膜ができる。これらにより、Ａｌの這い上がりを防止できて故障、破損が起こりにくく安定に成膜できる蒸発源１００を有する成膜装置を安価に提供することができる。また、蒸着材料供給手段を有することにより、小容量の坩堝で大量の蒸着を行うことができる。さらに、基板１５を縦に置いて水平方向に蒸着する縦型蒸着のできる成膜装置を提供することもできる。 According to the present embodiment, the opening 9 side of the outer crucible is made of a material having low wettability with respect to aluminum, so that the scooping out of the crucible hardly occurs. Thereby, it is possible to provide the evaporation source 100 which is not easily damaged. Further, the portion to which the vapor deposition material 5 is supplied is made of a material having high wettability, and the conductance of the crucible 7 can be made almost constant over time, so that the vapor deposition material 5 can be stably evaporated and film formation can be performed at a stable vapor deposition rate. . As a result, it is possible to provide a film forming apparatus having the evaporation source 100 that can prevent the creeping of Al and can stably form a film without causing failure or breakage at low cost. Further, by providing the vapor deposition material supply means, a large amount of vapor deposition can be performed with a small-capacity crucible. Further, it is possible to provide a film forming apparatus capable of performing vertical deposition in which the substrate 15 is placed vertically and deposited in the horizontal direction.
図５は、実施例５の成膜装置の蒸発源１００の概略断面図である。本実施例は坩堝直径が坩堝高さより大きい点で実施例４と異なる。これにより、坩堝のコンダクタンスを大きくでき、高蒸着レートが必要な成膜装置の蒸発源１００に用いることができる。 FIG. 5 is a schematic cross-sectional view of the evaporation source 100 of the film forming apparatus according to the fifth embodiment. This example differs from Example 4 in that the crucible diameter is larger than the crucible height. Thereby, the conductance of the crucible can be increased and the crucible conductance can be used for the evaporation source 100 of the film forming apparatus that requires a high vapor deposition rate.
本実施例により、坩堝のコンダクタンスを大きくでき、高蒸着レートが必要な成膜装置の蒸発源１００に用いることができる。 According to this embodiment, the conductance of the crucible can be increased and the crucible conductance can be used for the evaporation source 100 of the film forming apparatus that requires a high vapor deposition rate.
図６は実施例６の蒸着装置の蒸発源１００の概略断面図である。本実施例図６（Ａ）の実施例１の図１（Ａ）との違いは、まず、図示しない蒸着材料蓄積部と蒸着材料供給路１２からなる蒸着材料（Ａｌ）供給手段を有し、蒸着材料供給路１２が外側坩堝の開口部９の反対側にあることである。さらに、蒸着材料（Ａｌ）供給手段を有すことから、濡れ性大の内側坩堝２の容量が小さい、あるいは小さくてもよい。内側坩堝２内にある蒸着材料（Ａｌ）５の量も少量である。また、外側坩堝の開口部９にノズル１１を有することである。また、加熱部３が、内側坩堝２の近傍に局所的に配置されている。蒸着材料（Ａｌ）５の入った内側坩堝２は濡れ性が大きいため、内側坩堝２内のＡｌが少量であっても内壁が溶融Ａｌで濡れた状態になる。このため、安定にＡｌが蒸発する。Ａｌが内側坩堝２から這い上がりによりこぼれても外側坩堝１の内壁が濡れ性が小さいためせき止められ、外側坩堝の開口部９から流出することはない。Ａｌ蒸気は外側坩堝１とノズル１１からなる空間に加熱された温度で決まる蒸気圧をもってほぼ一様に満たされ、Ａｌ蒸気がノズル１１の開口から外へ噴出する。外側坩堝の開口部９に対向して垂直に配置された基板１５にＡｌが蒸着される。坩堝７のコンダクタンスをノズル１１の開口により決定できるので、安定した蒸着レートで成膜ができる。 FIG. 6 is a schematic cross-sectional view of the evaporation source 100 of the vapor deposition apparatus of Example 6. The difference between FIG. 1A and FIG. 1A of the first embodiment of FIG. 6A is that it has a vapor deposition material (Al) supply means comprising a vapor deposition material storage section and a vapor deposition material supply path 12 (not shown). The vapor deposition material supply path 12 is on the side opposite to the opening 9 of the outer crucible. Furthermore, since the vapor deposition material (Al) supply means is provided, the capacity of the inner crucible 2 having high wettability may be small or small. The amount of the vapor deposition material (Al) 5 in the inner crucible 2 is also small. Moreover, it is having the nozzle 11 in the opening part 9 of an outer crucible. Further, the heating unit 3 is locally disposed in the vicinity of the inner crucible 2. Since the inner crucible 2 containing the vapor deposition material (Al) 5 has high wettability, the inner wall becomes wet with molten Al even if the amount of Al in the inner crucible 2 is small. For this reason, Al evaporates stably. Even if Al spills from the inner crucible 2, the inner wall of the outer crucible 1 is clogged because it has low wettability, and does not flow out from the opening 9 of the outer crucible. Al vapor is almost uniformly filled with a vapor pressure determined by the temperature heated in the space formed by the outer crucible 1 and the nozzle 11, and the Al vapor is ejected from the opening of the nozzle 11 to the outside. Al is vapor-deposited on a substrate 15 that is vertically arranged facing the opening 9 of the outer crucible. Since the conductance of the crucible 7 can be determined by the opening of the nozzle 11, film formation can be performed at a stable deposition rate.
さらに、蒸着材料５は、図示しない蒸着材料蓄積部からＡｌ粒を内側坩堝２に供給され蒸着材料供給路１２を経て、内側坩堝２に供給される。この蒸着材料供給手段を有することにより、小容量の坩堝７で大量の、長時間の蒸着を行うことができる。また、蒸着材料供給路１２が外側坩堝の開口部９の反対側にあることにより、基板１５への蒸着の障害になることなく材料供給ができる。また、Ａｌが供給される内側坩堝２を加熱部３が局所的に効率的に加熱するために、最小限の電力で蒸着材料（Ａｌ）５を所望の温度にすることができる。 Furthermore, the vapor deposition material 5 is supplied to the inner crucible 2 through the vapor deposition material supply path 12 by supplying Al particles from a vapor deposition material accumulation unit (not shown) to the inner crucible 2. By having this vapor deposition material supply means, a large amount of vapor deposition can be performed for a long time with a small-capacity crucible 7. In addition, since the vapor deposition material supply path 12 is on the side opposite to the opening 9 of the outer crucible, the material can be supplied without hindering vapor deposition on the substrate 15. In addition, since the heating unit 3 locally and efficiently heats the inner crucible 2 to which Al is supplied, the vapor deposition material (Al) 5 can be set to a desired temperature with a minimum power.
図６（Ｂ）は、実施例６の成膜装置の他の蒸発源１００の概略断面図である。図６（Ａ）との違いは、蒸着材料供給路１２が外側坩堝１の側面に配置されていることである。このような配置においても、図６（Ａ）と同様に、蒸着材料５の蒸気噴出の障害にならない。要は、蒸着材料供給路１２を蒸着材料５の蒸気が坩堝外部に噴出するのを妨げない位置に配置することである。すなわち、蒸着材料供給路１２が、外側坩堝１の底面部または側面部を通って内側坩堝２に接続することで、蒸着材料５の蒸気の噴出を考慮した設計としている。 FIG. 6B is a schematic cross-sectional view of another evaporation source 100 of the film forming apparatus of Example 6. The difference from FIG. 6A is that the vapor deposition material supply path 12 is arranged on the side surface of the outer crucible 1. Even in such an arrangement, as in FIG. 6A, the vapor ejection of the vapor deposition material 5 does not become an obstacle. The point is to arrange the vapor deposition material supply path 12 at a position that does not prevent the vapor of the vapor deposition material 5 from being ejected outside the crucible. That is, the vapor deposition material supply path 12 is connected to the inner crucible 2 through the bottom surface or the side surface of the outer crucible 1, so that the vapor of the vapor deposition material 5 is jetted.
本実施例により、外側坩堝の開口部９側がアルミに対して濡れ性の小さい材料で構成されているので、坩堝外への這い上がりが発生しにくい。これにより、破損が起こりにくい蒸発源１００を提供することができる。また、蒸着材料５が供給される部分が濡れ性の大きい材料からなり、坩堝７の蒸気圧をほぼ一定にできるので、蒸着材料５が安定に蒸発し安定した蒸着レートで成膜ができる。これらにより、Ａｌの這い上がりを防止できて故障、破損が起こりにくく安定に成膜できる蒸発源１００を有する成膜装置を提供することができる。また、蒸着材料供給手段を有することにより、小容量の坩堝７で大量の蒸着を行うことができる。また、蒸着材料供給手段の蒸着材料供給路１２が、外側坩堝の開口部９の反対側、または蒸着材料５の蒸気が坩堝外部に噴出するのを妨げない位置に配置されているので、蒸着材料５の蒸気噴出の障害にならない。さらに、基板１５を縦に置いて水平方向に蒸着する縦型蒸着に好適な成膜装置を提供することができる。 According to the present embodiment, the opening 9 side of the outer crucible is made of a material having low wettability with respect to aluminum, so that the scooping out of the crucible hardly occurs. Thereby, it is possible to provide the evaporation source 100 which is not easily damaged. Further, the portion to which the vapor deposition material 5 is supplied is made of a material having high wettability, and the vapor pressure of the crucible 7 can be made almost constant, so that the vapor deposition material 5 is stably evaporated and film formation can be performed at a stable vapor deposition rate. As a result, it is possible to provide a film forming apparatus having the evaporation source 100 that can prevent the Al from creeping up and can be stably formed without failure or breakage. Further, by providing the vapor deposition material supply means, a large amount of vapor deposition can be performed with the small-capacity crucible 7. Further, the vapor deposition material supply path 12 of the vapor deposition material supply means is disposed on the opposite side of the opening 9 of the outer crucible or at a position that does not prevent the vapor of the vapor deposition material 5 from being ejected outside the crucible. It does not become an obstacle to the steam jet of 5. Furthermore, it is possible to provide a film forming apparatus suitable for vertical deposition in which the substrate 15 is placed vertically and deposited in the horizontal direction.
図７は、実施例７の成膜装置の他の蒸発源１００の概略断面図である。本実施例の実施例６の図６（Ａ）との違いは、外側坩堝の開口部９が円状である場合の坩堝直径、または外側坩堝の開口部９が円状以外の形状（例えば、楕円等）である場合の長手方向の長さが外側坩堝１の深さ（外側坩堝の開口部９から底面部までの長さ）より大きいことである。
これにより、ノズル１１の開口面積を大きく設定でき、これに依存するコンダクタンスを大きくでき、高蒸着レートが必要な成膜装置の蒸発源１００に好適となる。これ以外の効果は、実施例６と同様である。
FIG. 7 is a schematic cross-sectional view of another evaporation source 100 of the film forming apparatus of Example 7. The difference between Example 6 and Example 6 in FIG. 6A is that the diameter of the crucible when the opening 9 of the outer crucible is circular, or the shape of the opening 9 of the outer crucible other than circular (for example, The length in the longitudinal direction in the case of an ellipse or the like is larger than the depth of the outer crucible 1 (the length from the opening 9 to the bottom of the outer crucible).
Thereby, the opening area of the nozzle 11 can be set large, the conductance depending on this can be increased, and this is suitable for the evaporation source 100 of the film forming apparatus that requires a high vapor deposition rate. The other effects are the same as in the sixth embodiment.
以上の実施例は、専ら成膜装置に用いる蒸発源１００について説明した。以後、これらの蒸発源１００を用いた成膜装置に関する例を示す。 In the above embodiment, the evaporation source 100 used exclusively for the film forming apparatus has been described. Hereinafter, an example of a film forming apparatus using these evaporation sources 100 will be described.
図８は、実施例８の成膜装置の概略構成図である。図８は、図６（Ａ）の蒸発源を用いた成膜装置の例である。蒸発源１００は、実施例６（Ａ）に限定されるものではなく、例えば実施例７の蒸発源１００であってもよいことは言うまでもない。 FIG. 8 is a schematic configuration diagram of a film forming apparatus according to the eighth embodiment. FIG. 8 is an example of a film formation apparatus using the evaporation source of FIG. The evaporation source 100 is not limited to the sixth embodiment (A), and needless to say, for example, the evaporation source 100 according to the seventh embodiment may be used.
高真空に維持された、真空チャンバ１４の中に、基板１５と、その上に成膜された有機薄膜１６と、基板１５を保持し、上下に走査、移動するための基板保持移動機構２０が配置されている。この基板保持移動機構２０によって、基板１５は移動ガイド２１に沿って真空チャンバ１４内を上下移動する。また、基板上にパターンを形成するためのメタルマスク１７と、図６（Ａ）の蒸発源１００を複数個並べた蒸発源群１８、基板１５への成膜レートをモニタする蒸発源１００に固定された膜厚モニタ１９が設けられている。蒸発源群１８の蒸発源１００は蒸着材料供給路１２を備え、粒状の蒸着材料（Ａｌ）５が格納され、蒸着材料供給路１２へのＡｌ粒の量を調整する機構を備えた蒸着材料蓄積部２７、蒸着材料蓄積部２７を制御する蒸着材料供給制御器２８を備える。蒸発源群１８が備える図示しない坩堝を加熱する加熱部３に電力を投入する電源２３と、膜厚モニタ１９からの信号を受けて膜厚情報を電源２３にフィードバックする膜厚制御器２２を備え、蒸発源群１８から蒸発粒子の発生量を調節するために蒸発源群１８の温度を制御する。基板１５を上下に移動させる基板保持移動機構２０を制御する移動機構制御器２４と、電源２３と膜厚制御器２２、蒸着材料供給制御器２８および移動機構制御器２４を制御する制御器２５を備えている。 In a vacuum chamber 14 maintained at high vacuum, a substrate 15, an organic thin film 16 formed thereon, and a substrate holding / moving mechanism 20 for holding and moving the substrate 15 up and down are provided. Has been placed. The substrate holding and moving mechanism 20 moves the substrate 15 up and down in the vacuum chamber 14 along the movement guide 21. Further, the metal mask 17 for forming a pattern on the substrate, the evaporation source group 18 in which a plurality of the evaporation sources 100 in FIG. 6A are arranged, and the evaporation source 100 for monitoring the film forming rate on the substrate 15 are fixed. A film thickness monitor 19 is provided. The evaporation source 100 of the evaporation source group 18 includes a vapor deposition material supply path 12, in which a granular vapor deposition material (Al) 5 is stored, and a vapor deposition material storage having a mechanism for adjusting the amount of Al particles to the vapor deposition material supply path 12. The vapor deposition material supply controller 28 for controlling the unit 27 and the vapor deposition material accumulation unit 27 is provided. A power source 23 that supplies power to the heating unit 3 that heats a crucible (not shown) included in the evaporation source group 18 and a film thickness controller 22 that receives a signal from the film thickness monitor 19 and feeds back film thickness information to the power source 23 are provided. The temperature of the evaporation source group 18 is controlled in order to adjust the generation amount of evaporation particles from the evaporation source group 18. A moving mechanism controller 24 that controls the substrate holding and moving mechanism 20 that moves the substrate 15 up and down, a power source 23, a film thickness controller 22, a deposition material supply controller 28, and a controller 25 that controls the moving mechanism controller 24. I have.
基板１５に成膜された有機薄膜１６の次には、界面層としてアルカリ金属やアルカリ土類金属の酸化物やフッ化物、例えばＬｉＦなどの極薄膜（〜０.５ｎｍ）が形成される。
この後にＡｌ薄膜（〜１５０ｎｍ）が形成される。このＡｌ薄膜を全て蒸着で形成する場合や、より薄いＡｌ薄膜を蒸着で形成した後、真空チャンバ１４から別の真空チャンバに移動してスパッタにより残りのＡｌ薄膜を形成する場合がある。
Next to the organic thin film 16 formed on the substrate 15, an ultrathin film (up to 0.5 nm) of an oxide or fluoride of alkali metal or alkaline earth metal, for example, LiF is formed as an interface layer.
After this, an Al thin film (˜150 nm) is formed. In some cases, all of the Al thin film is formed by vapor deposition, or after a thinner Al thin film is formed by vapor deposition, the remaining Al thin film is formed by sputtering from the vacuum chamber 14 to another vacuum chamber.
Ａｌの蒸着は以下のように行う。制御器２５により膜厚制御器２２、電源２３、移動機構制御器２４、蒸着材料供給制御器２８が制御される。電源２３により蒸着材料５としてＡｌが収容された複数個の蒸発源１００からなる蒸発源群１８の各加熱部３がそれぞれ加熱され、これらの蒸発源１００からなる蒸発源群１８の水平向きの各坩堝開口部９から、蒸着粒子、今の場合Ａｌ粒子（蒸気）が基板１５に向かって噴射する。蒸発源１００を列状に並べて蒸発源群１８とし、蒸発源群１８と基板１５を相対的に走査することにより、基板１５への一様な成膜が可能となる。膜厚制御器２２は、噴出されたＡｌ粒子の一部を検出する膜厚モニタ１９からの信号を受けて膜厚情報を電源２３にフィードバックし、蒸発源１００が備える図示しない坩堝を加熱して蒸発源群１８から蒸発粒子を発生させるために蒸発源群１８の温度を蒸発源１００ごとに制御して、基板１５へのＡｌ蒸着速度を一定に維持する。蒸発源群１８の蒸発源１００にはそれぞれ坩堝７の温度を検出する図示しない温度検出器が備えられ、各蒸発源ユニットの坩堝温度をモニタし、ほぼ１４００℃に維持された上で、膜厚モニタ１９を用いてより正確に蒸着膜厚が制御される。図８には膜厚モニタ１９は１個しか描かれていないが、蒸発源群１８の各蒸発源１００に対して１個ずつ設けて個別に蒸着速度を制御することが望ましい。蒸発源群１８は、移動機構制御器２４により制御される基板保持移動機構２０によって移動ガイド２１に沿って真空チャンバ１４内を上下移動する。蒸発源群１８は片道、あるいは往復水平方向に走査され、メタルマスク１７を通して基板１５上に形成された有機薄膜１６、ＬｉＦ薄膜上に蒸着されＡｌ薄膜が形成される。 The deposition of Al is performed as follows. The controller 25 controls the film thickness controller 22, the power source 23, the moving mechanism controller 24, and the deposition material supply controller 28. Each heating part 3 of the evaporation source group 18 composed of a plurality of evaporation sources 100 containing Al as the vapor deposition material 5 is heated by the power source 23, and each of the evaporation source groups 18 composed of these evaporation sources 100 in the horizontal direction. From the crucible opening 9, vapor deposition particles, in this case, Al particles (vapor) are sprayed toward the substrate 15. By arranging the evaporation sources 100 in a row to form the evaporation source group 18 and relatively scanning the evaporation source group 18 and the substrate 15, uniform film formation on the substrate 15 is possible. The film thickness controller 22 receives a signal from the film thickness monitor 19 that detects a part of the ejected Al particles, feeds back film thickness information to the power source 23, and heats a crucible (not shown) provided in the evaporation source 100. In order to generate evaporation particles from the evaporation source group 18, the temperature of the evaporation source group 18 is controlled for each evaporation source 100, and the rate of Al deposition on the substrate 15 is kept constant. The evaporation sources 100 of the evaporation source group 18 are each provided with a temperature detector (not shown) that detects the temperature of the crucible 7, and the crucible temperature of each evaporation source unit is monitored and maintained at approximately 1400 ° C. The deposited film thickness is more accurately controlled using the monitor 19. Although only one film thickness monitor 19 is depicted in FIG. 8, it is desirable to provide one film thickness monitor for each evaporation source 100 in the evaporation source group 18 and individually control the deposition rate. The evaporation source group 18 moves up and down in the vacuum chamber 14 along the movement guide 21 by the substrate holding movement mechanism 20 controlled by the movement mechanism controller 24. The evaporation source group 18 is scanned in one-way or reciprocating horizontal direction and is deposited on the organic thin film 16 and LiF thin film formed on the substrate 15 through the metal mask 17 to form an Al thin film.
基板１５の走査は以下のように行う。まず、基板１５は蒸発源群１８から発せられるＡｌ蒸気が到達しない位置まで下方に下げた待機位置で待機する。このとき防着板、あるいはシャッターを蒸発源群１８の上方に設置して、待機位置が蒸発源群１８から離れすぎないようにすることが望ましい。この位置から基板１５を上方に移動、走査しながら、基板１５の表面に蒸着材料５を蒸着する。基板１５の走査に伴い、基板１５の下方から上方に向かって基板１５の表面に蒸着材料５が蒸着される。基板１５の下方まで蒸着された後、今度は基板１５が下方に走査され、さらに蒸着材料５が蒸着されて再び基板１５は待機位置に戻る。 The scanning of the substrate 15 is performed as follows. First, the substrate 15 stands by at a standby position lowered downward to a position where the Al vapor emitted from the evaporation source group 18 does not reach. At this time, it is desirable to install a deposition preventing plate or a shutter above the evaporation source group 18 so that the standby position is not too far from the evaporation source group 18. The deposition material 5 is deposited on the surface of the substrate 15 while moving and scanning the substrate 15 upward from this position. As the substrate 15 is scanned, the deposition material 5 is deposited on the surface of the substrate 15 from below to above. After vapor deposition to below the substrate 15, this time the substrate 15 is scanned downward, the vapor deposition material 5 is further vapor deposited, and the substrate 15 returns to the standby position again.
蒸着材料５は坩堝７の中に、少なくとも上記走査でなくならない量が収容されている。
待機位置で、待機時間に蒸着材料供給路１２から粒状の蒸着材料（Ａｌ）５が坩堝７に供給される。蒸着材料供給路１２へは、蒸着材料供給制御器２８からの命令により、Ａｌ粒の供給量を調整する機構を備えた蒸着材料蓄積部２７から供給される。Ａｌ粒の供給量を調整する機構は、例えば、蒸着材料蓄積部２７と蒸着材料供給路１２の接続部にシャッタを設けて、供給量を重量計測によりモニタしながら、シャッタを開閉して坩堝７への蒸着材料５の供給量を制御する。また、本成膜装置のメンテナンス前には、坩堝７内の蒸着材料５は全て蒸発させて坩堝７内、あるいは外側坩堝１（内側坩堝２）内に残らないようにする。これにより、坩堝温度が冷却する過程でＡｌと坩堝材料の間に働く応力をなくすことができ、破損しない蒸発源１００となる。Ａｌが坩堝７内に残留する場合でも、坩堝７が小さいため、坩堝温度が冷却する過程でＡｌと坩堝材料の間に働く応力を小さくすることができるので、破損が起こりにくい蒸発源１００を提供することができる。
The vapor deposition material 5 is accommodated in the crucible 7 at least in an amount that does not become the above scanning.
At the standby position, the granular vapor deposition material (Al) 5 is supplied from the vapor deposition material supply path 12 to the crucible 7 during the standby time. The vapor deposition material supply path 12 is supplied from a vapor deposition material accumulating unit 27 having a mechanism for adjusting the supply amount of Al particles according to a command from the vapor deposition material supply controller 28. The mechanism for adjusting the supply amount of the Al particles is, for example, by providing a shutter at the connection portion between the vapor deposition material storage unit 27 and the vapor deposition material supply path 12 and opening and closing the shutter while monitoring the supply amount by measuring the weight. The supply amount of the vapor deposition material 5 is controlled. Further, before the deposition apparatus is maintained, all the vapor deposition material 5 in the crucible 7 is evaporated so as not to remain in the crucible 7 or the outer crucible 1 (inner crucible 2). As a result, the stress acting between the Al and the crucible material during the process of cooling the crucible temperature can be eliminated, and the evaporation source 100 is not damaged. Even when Al remains in the crucible 7, since the crucible 7 is small, the stress acting between the Al and the crucible material can be reduced in the process of cooling the crucible temperature. can do.
また、本実施例では、基板１５を垂直（上下）方向に走査したが、蒸発源１００を上下方向に並べて蒸発源群１８とし、基板１５を水平方向に走査してもよい。 In this embodiment, the substrate 15 is scanned in the vertical (up and down) direction. However, the evaporation source 100 may be arranged in the vertical direction to form the evaporation source group 18 and the substrate 15 may be scanned in the horizontal direction.
本実施例により、坩堝開口部側がアルミに対して濡れ性の小さい材料で構成されているので、坩堝外への這い上がりが発生しにくい。蒸着材料供給手段を有することにより蒸着材料５を収容する坩堝７を小さくでき、坩堝温度が冷却する過程でＡｌと坩堝材料の間に働く応力を小さくすることができる。さらに、坩堝７が小さいので、蒸着材料５を飛ばしきるシーケンスにすることが容易にでき、冷却時応力が働かないようにすることができる。これにより、破損が起こりにくい蒸発源１００を提供することができる。また、蒸着材料５が供給される坩堝７が濡れ性の大きい材料からなり、蒸着材料５が坩堝表面を濡らし、蒸着材料５が安定に蒸発し、坩堝７の蒸気圧をほぼ一定にできるので、安定した蒸着レートで成膜ができる。これらにより、Ａｌの這い上がりを防止できて故障、破損が起こりにくく安定に成膜できる蒸発源１００を有する成膜装置を提供することができる。また、蒸着材料供給手段を有することにより、小容量の坩堝７で大量かつ長時間の蒸着を行うことができる。さらに、基板１５を縦に置いて水平方向に蒸着する縦型蒸着する成膜装置を提供することができる。 According to the present embodiment, since the crucible opening side is made of a material having low wettability with respect to aluminum, it is difficult for the crucible to go out of the crucible. By providing the vapor deposition material supply means, the crucible 7 accommodating the vapor deposition material 5 can be made small, and the stress acting between the Al and the crucible material can be reduced in the process of cooling the crucible temperature. Furthermore, since the crucible 7 is small, it is possible to easily make a sequence in which the vapor deposition material 5 is completely skipped, and it is possible to prevent stress during cooling. Thereby, it is possible to provide the evaporation source 100 which is not easily damaged. Further, the crucible 7 to which the vapor deposition material 5 is supplied is made of a material having high wettability, the vapor deposition material 5 wets the crucible surface, the vapor deposition material 5 is stably evaporated, and the vapor pressure of the crucible 7 can be made almost constant. Films can be formed at a stable deposition rate. As a result, it is possible to provide a film forming apparatus having the evaporation source 100 that can prevent the Al from creeping up and can be stably formed without failure or breakage. Further, by providing the vapor deposition material supply means, it is possible to carry out vapor deposition for a long time with a small capacity crucible 7. Further, it is possible to provide a film forming apparatus for performing vertical deposition in which the substrate 15 is placed vertically and deposited in the horizontal direction.
図１３は、有機ＥＬディスプレイ生産工程の一例を示した工程図である。図１３において、有機層と有機層に流れる電流を制御する薄膜トランジスタ（ＴＦＴ）が形成されたＴＦＴ基板と、有機層を外部の湿気から保護する封止基板は別々に形成され、封止工程において組み合わされる。 FIG. 13 is a process diagram showing an example of an organic EL display production process. In FIG. 13, a TFT substrate on which an organic layer and a thin film transistor (TFT) for controlling a current flowing in the organic layer are formed and a sealing substrate for protecting the organic layer from external moisture are separately formed and combined in a sealing process. It is.
図１３のＴＦＴ基板の製造工程において、ウェット洗浄された基板１５に対してドライ洗浄を行う。ドライ洗浄は紫外線照射による洗浄を含む場合もある。ドライ洗浄されたＴＦＴ基板に先ず、ＴＦＴが形成される。ＴＦＴの上にパッシベーション膜および平坦化膜が形成され、その上に有機ＥＬ層の下部電極が形成される。下部電極はＴＦＴのドレイン電極と接続している。下部電極をアノードとする場合は、例えば、ＩＴＯ（Indium Tin Oxide）膜が使用される。 In the TFT substrate manufacturing process of FIG. 13, dry cleaning is performed on the wet-cleaned substrate 15. Dry cleaning may include cleaning by ultraviolet irradiation. First, a TFT is formed on the dry-cleaned TFT substrate. A passivation film and a planarizing film are formed on the TFT, and a lower electrode of the organic EL layer is formed thereon. The lower electrode is connected to the drain electrode of the TFT. When the lower electrode is an anode, for example, an ITO (Indium Tin Oxide) film is used.
下部電極の上に有機ＥＬ層が形成される。有機ＥＬ層は複数の層から構成される。下部電極がアノードの場合は、下から、例えば、ホール注入層、ホール輸送層、発光層、電子輸送層、電子注入層である。このような有機ＥＬ層は蒸着によって形成される。 An organic EL layer is formed on the lower electrode. The organic EL layer is composed of a plurality of layers. When the lower electrode is an anode, from the bottom, for example, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer. Such an organic EL layer is formed by vapor deposition.
有機ＥＬ層の上には、各画素共通に、ベタ膜で上部電極が形成される。有機ＥＬ表示装置がトップエミッションの場合は、上部電極にはＩＺＯ等の透明電極、あるいは、Ａｇ、ＭａＡｇ等の金属あるいは合金が使用され、有機ＥＬ表示装置がボトムエミッションの場合は、Ａｇ、Ｍｇ、Ａｌ等の金属膜が使用される。以上で説明した前記のＡｌ蒸着等の例は本工程での上部電極の蒸着に相当する。 On the organic EL layer, an upper electrode is formed of a solid film in common for each pixel. When the organic EL display device is top emission, a transparent electrode such as IZO or a metal or alloy such as Ag or MaAg is used for the upper electrode. When the organic EL display device is bottom emission, Ag, Mg, A metal film such as Al is used. The above-described example such as Al vapor deposition corresponds to vapor deposition of the upper electrode in this step.
図１３の封止基板工程において、ウェット洗浄およびドライ洗浄を行った封止基板に対してデシカント（乾燥剤）が配置される。有機ＥＬ層は水分があると劣化をするので、内部の水分を除去するためにデシカントが使用される。デシカントには種々な材料を用いることができるが、有機ＥＬ表示装置がトップエミッションかボトムエミッションかによってデシカントの配置方法が異なる。 In the sealing substrate process of FIG. 13, a desiccant (desiccant) is disposed on the sealing substrate that has been subjected to wet cleaning and dry cleaning. Since the organic EL layer deteriorates when moisture is present, a desiccant is used to remove the moisture inside. Although various materials can be used for the desiccant, the desiccant arrangement method differs depending on whether the organic EL display device is a top emission or a bottom emission.
このように、別々に製造されたＴＦＴ基板と封止基板は封止工程において、組み合わされる。ＴＦＴ基板と封止基板を封止するためのシール材は、封止基板に形成される。封止基板とＴＦＴ基板を組み合わせた後、シール部に紫外線を照射して、シール部を硬化させ、封止を完了させる。このようにして形成された有機ＥＬ表示装置に対して点灯検査を行う。点灯検査において、黒点、白点等の欠陥が生じている場合でも欠陥修正可能なものは修正を行い、有機ＥＬ表示装置が完成する。なお、封止基板が存在しない、いわゆる固体封止の有機ＥＬ表示装置の製造についても、本発明の蒸着装置を使用できることは言うまでもない。 In this way, the TFT substrate and the sealing substrate manufactured separately are combined in the sealing step. A sealing material for sealing the TFT substrate and the sealing substrate is formed on the sealing substrate. After combining the sealing substrate and the TFT substrate, the sealing portion is irradiated with ultraviolet rays to cure the sealing portion and complete the sealing. A lighting test is performed on the organic EL display device thus formed. In the lighting inspection, even if defects such as black spots and white spots have occurred, those that can be corrected can be corrected to complete the organic EL display device. In addition, it cannot be overemphasized that the vapor deposition apparatus of this invention can be used also about manufacture of what is called a solid sealing organic electroluminescence display which does not have a sealing substrate.
図９は、実施例９の成膜装置の概略構成図である。実施例８との違いは、基板１５は静止し、蒸発源群１８が走査されることである。実施例８との違いのみを以下に記す。蒸発源群１８を保持し、移動ガイド２１に沿って上下に移動させる蒸発源保持移動機構２９、蒸発源保持移動機構２９を制御する移動機構制御器２４、および移動機構制御器２４を制御する制御器２５を備えている。 FIG. 9 is a schematic configuration diagram of a film forming apparatus of Example 9. The difference from the eighth embodiment is that the substrate 15 is stationary and the evaporation source group 18 is scanned. Only the differences from Example 8 are described below. The evaporation source holding and moving mechanism 29 that holds the evaporation source group 18 and moves up and down along the movement guide 21, the moving mechanism controller 24 that controls the evaporation source holding and moving mechanism 29, and the control that controls the moving mechanism controller 24. A container 25 is provided.
また、本実施例では、蒸発源群１８を垂直（上下）方向に走査したが、蒸発源１００を上下方向に並べて蒸発源群１８とし、蒸発源群１８を水平方向に走査してもよい。 In this embodiment, the evaporation source group 18 is scanned in the vertical (up and down) direction. However, the evaporation source 100 may be arranged in the vertical direction to form the evaporation source group 18 and the evaporation source group 18 may be scanned in the horizontal direction.
本実施例に拠れば、基板１５よりコンパクトな蒸発源群１８が移動するので、走査の移動距離をより短縮することができる。これにより、よりコンパクトな成膜装置を提供することができる。 According to this embodiment, since the evaporation source group 18 that is more compact than the substrate 15 moves, the scanning moving distance can be further shortened. Thereby, a more compact film forming apparatus can be provided.
図１０は、実施例１０の成膜装置の概略構成図である。実施例９との違いは、蒸着材料蓄積部２７が静止して配置され、走査される蒸発源群１８と切り離されていることである。実施例９と違いのみを以下に記す。蒸着材料蓄積部２７は、蒸発源群１８の待機位置（図１０に示す位置）に配置されている。蒸発源群１８は、まず待機位置で蒸着材料蓄積部２７から蒸着材料供給路１２を経て蒸着材料（Ａｌ）粒の補給を受ける。蒸着材料供給路１２の入口はラッパ状に広がっており、口にはシャッタを備えており、蒸発源群１８が待機位置で蒸着材料５の補給を受けるタイミングでシャッタが自動的に開く。蒸着材料蓄積部２７には、蒸発源群１８の各蒸発源１００の蒸着材料供給路１２に対応する位置に、蒸着材料供給のための出口が設けられている。この出口には出口を開閉する開閉機構が設けられており、蒸着材料供給制御器２８によってこの開閉機構が制御されることにより、坩堝７への蒸着材料供給量が制御される。蒸着材料の供給を終えると、蒸発源群１８の蒸着材料供給路１２の入口シャッタは閉じられ、蒸気が外に出ないようにしている。蒸発源群１８は上方に走査されるとともに、基板方向へ蒸気を放出して、基板１５に蒸着材料５が蒸着される。蒸発源群１８は、基板上まで達して、基板全体を一様に成膜すると、下方に走査され、往復で蒸着を行い、再び待機位置へ戻り、１枚の基板１５の成膜を終える。次には、自動的に基板１５を交換して、同様な手順で次の基板の成膜を行う。 FIG. 10 is a schematic configuration diagram of a film forming apparatus according to the tenth embodiment. The difference from the ninth embodiment is that the vapor deposition material accumulation unit 27 is disposed stationary and separated from the scanning evaporation source group 18. Only differences from Example 9 are described below. The vapor deposition material accumulation unit 27 is disposed at a standby position (position shown in FIG. 10) of the evaporation source group 18. The evaporation source group 18 first receives replenishment of vapor deposition material (Al) grains from the vapor deposition material accumulation unit 27 through the vapor deposition material supply path 12 at the standby position. The entrance of the vapor deposition material supply path 12 has a trumpet shape, and the mouth is provided with a shutter. The shutter is automatically opened at the timing when the evaporation source group 18 receives replenishment of the vapor deposition material 5 at the standby position. In the vapor deposition material accumulation unit 27, an outlet for supplying the vapor deposition material is provided at a position corresponding to the vapor deposition material supply path 12 of each evaporation source 100 of the evaporation source group 18. The outlet is provided with an opening / closing mechanism for opening and closing the outlet, and the evaporation material supply controller 28 controls the opening / closing mechanism to control the amount of the evaporation material supplied to the crucible 7. When the supply of the vapor deposition material is finished, the inlet shutter of the vapor deposition material supply path 12 of the evaporation source group 18 is closed so that the vapor does not go out. The evaporation source group 18 is scanned upward and releases vapor toward the substrate, so that the deposition material 5 is deposited on the substrate 15. When the evaporation source group 18 reaches the substrate and forms the entire substrate uniformly, the evaporation source group 18 is scanned downward, performs reciprocal evaporation, returns to the standby position, and completes the formation of one substrate 15. Next, the substrate 15 is automatically replaced, and the next substrate is formed in the same procedure.
蒸着材料供給制御器２８は、基板１５へ成膜しないタイミングで蒸着材料５の供給を行う。これは、上述のように蒸着材料５の供給中は蒸着材料供給路１２の入口シャッタを開けたままにしておく必要があり、開けたままだと基板１５へ成膜に悪影響を及ぼすからである。 The vapor deposition material supply controller 28 supplies the vapor deposition material 5 at a timing at which no film is formed on the substrate 15. This is because it is necessary to keep the entrance shutter of the vapor deposition material supply path 12 open during the supply of the vapor deposition material 5 as described above, and if it is left open, the film formation on the substrate 15 is adversely affected.
また、本実施例では、蒸発源群１８を垂直（上下）方向に走査したが、蒸発源１００を上下方向に並べて蒸発源群１８とし、蒸発源群１８を水平方向に走査してもよい。また、蒸着材料供給路１２の入口はラッパ状に広がっているとしたが、広がっていなくても、例えば筒状でもよい。ただし、ラッパ状になっていた方が、蒸着材料５が外にこぼれにくい。また、蒸着材料蓄積部２７からの蒸着材料５の供給頻度を、基板１５を１枚ごとに１回の例を述べたが、これに限るものではない。基板２枚に１回でも、基板８〜１０枚に１回でもよいが、頻度を高くするほど、蒸発源群１８を軽量化できる。蒸発源群１８がコンパクトで、軽量化できるので、蒸発源群１８の移動機構もコンパクト化できる。 In this embodiment, the evaporation source group 18 is scanned in the vertical (up and down) direction. However, the evaporation source 100 may be arranged in the vertical direction to form the evaporation source group 18 and the evaporation source group 18 may be scanned in the horizontal direction. In addition, although the entrance of the vapor deposition material supply path 12 is expanded in a trumpet shape, it may not be expanded but may be in a cylindrical shape, for example. However, the vapor deposition material 5 is less likely to spill out if it is in the trumpet shape. Moreover, although the supply frequency of the vapor deposition material 5 from the vapor deposition material accumulation | storage part 27 described the example of the board | substrate 15 once for every board | substrate 15, the example is not restricted to this. The evaporation source group 18 can be reduced in weight as the frequency is increased, although it may be once every two substrates or once every 8 to 10 substrates. Since the evaporation source group 18 is compact and can be reduced in weight, the moving mechanism of the evaporation source group 18 can also be reduced in size.
本実施例に拠れば、静止した蒸着材料蓄積部２７とは別に、蒸発源群１８の走査が行われる。蒸発源群１８がより軽量、コンパクトにできるので、蒸発源群等保持移動機構２６も軽量、コンパクトにすることができる。これにより、よりコンパクトな成膜装置を提供することができる。 According to this embodiment, the evaporation source group 18 is scanned separately from the stationary vapor deposition material accumulation unit 27. Since the evaporation source group 18 can be made lighter and more compact, the evaporation source group holding and moving mechanism 26 can also be made lighter and more compact. Thereby, a more compact film forming apparatus can be provided.
図１１は、実施例１１の成膜装置の概略構成図である。実施例１０との違いは、蒸発源群１８の蒸発源１００は図の左から奇数番目の蒸発源１００の坩堝７には蒸着材料Ａ、偶数番目の蒸発源１００の坩堝７には蒸着材料Ｂが収容されており、Ａ、Ｂ２元の共蒸着を行うことができる。このような蒸発源群１８に合わせて、蒸着材料蓄積部２７は、個々の蒸発源１００ごとに独立した材料室となり、対応する蒸着材料５が仕込まれている。蒸着材料供給路１２はこれらの蒸発源群１８の個々の蒸発源１００と蒸着材料蓄積部２７の個々の材料室とを接続する。膜厚モニタ１９は図１１では右端の蒸発源用の１個しか描かれていないが、すべての蒸発源１００に同様に備わっており、個々に蒸着レートが制御される。 FIG. 11 is a schematic configuration diagram of a film forming apparatus of Example 11. The difference from the tenth embodiment is that the evaporation source 100 of the evaporation source group 18 is the evaporation material A in the crucible 7 of the odd-numbered evaporation source 100 from the left in the figure, and the evaporation material B in the crucible 7 of the even-numbered evaporation source 100. Can be co-deposited with A and B. In accordance with the evaporation source group 18, the vapor deposition material storage unit 27 becomes an independent material chamber for each evaporation source 100, and the corresponding vapor deposition material 5 is charged. The vapor deposition material supply path 12 connects the individual evaporation sources 100 of these evaporation source groups 18 and the individual material chambers of the vapor deposition material accumulation unit 27. Although only one film thickness monitor 19 for the rightmost evaporation source is depicted in FIG. 11, all the evaporation sources 100 are similarly provided, and the deposition rate is individually controlled.
本実施例に拠れば、実施例１０と同様に、蒸発源群１８の蒸発源１００が極めて軽量、コンパクトにできるので、多元の共蒸着を行う場合でも蒸発源１００を一列に並べることができ、蒸発源群１８がコンパクトになり、膜厚モニタ１９がモニタし易い位置に設置し易い。これにより、よりコンパクトで、共蒸着を制御性よく行うことができる安定な成膜装置を提供することができる。本実施例では、共蒸着として２元の例を述べたが、３元以上も同様に可能であることは言うまでもない。 According to this embodiment, as in Embodiment 10, the evaporation source 100 of the evaporation source group 18 can be made extremely lightweight and compact. Therefore, even when performing multi-source co-evaporation, the evaporation sources 100 can be arranged in a line. The evaporation source group 18 becomes compact and can be easily installed at a position where the film thickness monitor 19 can be easily monitored. Accordingly, it is possible to provide a stable film forming apparatus that is more compact and can perform co-deposition with good controllability. In this embodiment, a binary example has been described as co-evaporation, but it goes without saying that a ternary or more is also possible.
図１２は、実施例１１の成膜装置の概略構成図である。実施例１０との違いは基板が水平に配置され、これに伴い、蒸発源群１８が上向きであることである。次に、蒸着材料供給路１２が蒸着材料蓄積部２７側に設けられていることである。まず、蒸着材料蓄積部２７が静止して配置され、走査される蒸発源群１８と切り離されていることである。実施例１０と違いのみを以下に記す。蒸発源群１８の各蒸発源１００の坩堝７には、待機位置で上方の蒸着材料蓄積部２７から蒸着材料供給路１２を経て、蒸着材料５が供給される。この供給は坩堝の開口部３１が上方向きなので、これと異なる向きに孔を開ける必要がなく、蒸気が漏れる心配がない。本実施例に拠れば、実施例１０と同様に、蒸発源群１８の蒸発源１００が極めて軽量、コンパクトにでき、不要に蒸気が漏れる心配がない安定な成膜装置を提供することができる。 FIG. 12 is a schematic configuration diagram of a film forming apparatus of Example 11. The difference from the tenth embodiment is that the substrate is disposed horizontally and the evaporation source group 18 faces upward accordingly. Next, the vapor deposition material supply path 12 is provided on the vapor deposition material accumulation unit 27 side. First, the vapor deposition material accumulating unit 27 is placed stationary and separated from the scanning evaporation source group 18. Only differences from Example 10 are described below. The vapor deposition material 5 is supplied to the crucible 7 of each evaporation source 100 of the evaporation source group 18 from the upper vapor deposition material accumulation unit 27 through the vapor deposition material supply path 12 at the standby position. In this supply, since the opening 31 of the crucible faces upward, there is no need to make a hole in a different direction, and there is no fear of leakage of steam. According to the present embodiment, similarly to the embodiment 10, the evaporation source 100 of the evaporation source group 18 can be made extremely light and compact, and a stable film forming apparatus can be provided without fear of unnecessary vapor leakage.
以上の実施例１から１２までに述べた本発明は、上記の形態のみに制限されず、上記で述べた様々な組み合わせも含まれる。また、有機ＥＬ表示装置や照明装置に用いられる有機ＥＬ素子を製造する工程を例にして述べたが、磁気テープ、お菓子の袋のＡｌ内装等、他分野の蒸着工程を含むものの全てに適用可能であることは言うまでもない。 The present invention described in the first to twelfth embodiments is not limited to the above-described form, and includes various combinations described above. In addition, the process for producing organic EL elements used in organic EL display devices and lighting devices has been described as an example, but it is applicable to all processes involving vapor deposition processes in other fields such as magnetic tape and Al interiors of candy bags. It goes without saying that it is possible.
以上のように、本発明による成膜装置によれば、坩堝の開口部側がアルミに対して濡れ性の小さい材料で構成されているので、坩堝外への這い上がりが発生しにくい。これにより、破損が起こりにくい蒸発源１００を提供することができる。また、蒸着材料５が供給される部分が濡れ性の大きい材料からなるので、蒸着材料が安定に蒸発し安定な成膜ができる。これにより、Ａｌの這い上がりを防止できて故障、破損が起こりにくく安定に成膜できる蒸発源１００を有する成膜装置を安価に提供することができる。さらに、基板１５を縦に置いて水平方向に蒸着する縦型蒸着に適した成膜装置を提供することができる。 As described above, according to the film forming apparatus of the present invention, the crucible opening side is made of a material having low wettability with respect to aluminum, so that the scooping out of the crucible hardly occurs. Thereby, it is possible to provide the evaporation source 100 which is not easily damaged. In addition, since the portion to which the vapor deposition material 5 is supplied is made of a material with high wettability, the vapor deposition material is stably evaporated and stable film formation can be performed. Thereby, it is possible to provide a film forming apparatus having the evaporation source 100 that can prevent the creeping of Al and can form a film stably without causing failure or breakage at low cost. Furthermore, it is possible to provide a film forming apparatus suitable for vertical deposition in which the substrate 15 is placed vertically and deposited in the horizontal direction.
また、蒸着材料供給手段を有することにより、小容量の坩堝７で大量の蒸着を行うことができる。また、蒸着材料供給手段の蒸着材料供給路１２が、坩堝開口部の反対側、ないし蒸着材料の蒸気が坩堝外部に噴出するのを妨げない位置に配置されているので、蒸着材料５の蒸気噴出の障害にならない。 Further, by providing the vapor deposition material supply means, a large amount of vapor deposition can be performed with the small-capacity crucible 7. Further, since the vapor deposition material supply path 12 of the vapor deposition material supply means is disposed on the opposite side of the crucible opening or at a position that does not prevent the vapor of the vapor deposition material from being ejected outside the crucible, It will not be an obstacle.
さらには、蒸発源群１８がより軽量、コンパクトにできるので、蒸発源群等保持移動機構２６も軽量、コンパクトにすることができる。これにより、よりコンパクトな成膜装置を提供することができる。また、多元の共蒸着を行う場合でも蒸発源１００を一列に並べることができ、膜厚モニタ１９がモニタし易い位置に設置し易い。これにより、よりコンパクトで、共蒸着を制御性よく行うことができる安定な成膜装置を提供することができる。 Furthermore, since the evaporation source group 18 can be made lighter and more compact, the evaporation source group holding and moving mechanism 26 can also be made lighter and more compact. Thereby, a more compact film forming apparatus can be provided. Further, even when multi-source co-evaporation is performed, the evaporation sources 100 can be arranged in a line, and the film thickness monitor 19 can be easily installed at a position that can be easily monitored. Accordingly, it is possible to provide a stable film forming apparatus that is more compact and can perform co-deposition with good controllability.
以上で説明した構成では、基板１５に対して蒸発源１００が所定の方向に移動して、基板に蒸着する構成である。しかし、本発明は、蒸発源１００が固定され、基板１５が所定の方向に移動する構成の蒸着装置に対しても適用することができる。すなわち、基板１５に均一な蒸着膜を形成するには、基板１５と蒸発源１００とが相対的に移動すればよい。
しかし、本発明の蒸発源群１８は軽量、コンパクトにできるので、蒸発源１００を移動させるほうが、移動距離を短縮でき、成膜装置もコンパクトにできる利点がある。また、前述した各実施形態の諸組み合わせで、可能なもの全てが本発明として実施可能であることは言うまでもない。
In the configuration described above, the evaporation source 100 moves in a predetermined direction with respect to the substrate 15 and is deposited on the substrate. However, the present invention can also be applied to a vapor deposition apparatus configured such that the evaporation source 100 is fixed and the substrate 15 moves in a predetermined direction. That is, in order to form a uniform vapor deposition film on the substrate 15, the substrate 15 and the evaporation source 100 may be moved relatively.
However, since the evaporation source group 18 of the present invention can be light and compact, moving the evaporation source 100 has an advantage that the moving distance can be shortened and the film forming apparatus can be made compact. It goes without saying that all possible combinations of the above-described embodiments can be implemented as the present invention.
以上、前記諸実施形態に基づき具体的に説明したが、本発明は、前記実施形態に限定されるものではなく、その要旨を逸脱しない範囲において種々変更可能であることは勿論である。 Although specific description has been given based on the above-described embodiments, the present invention is not limited to the above-described embodiments, and it is needless to say that various changes can be made without departing from the scope of the invention.
＜比較例１＞
図１５は、比較例として、本発明の構成を採用しない成膜装置の蒸発源２００の概略断面図（１）を示す。ＰＢＮ（Pyrolytic Boron Nitride）からなる坩堝２０７の中に蒸着材料５が収容されており、この坩堝２０７を加熱部（ヒーター）２０３により加熱し、リフレクタ２０４により逃げる熱を坩堝２０７、加熱部２０３へ戻して熱効率を上げて蒸着材料２０５を加熱する。加熱された蒸着材料２０５は昇華あるいは気化により蒸発して、坩堝の開口部２０９から噴出し図示しない基板上に蒸着材料２０５が蒸着される。
<Comparative Example 1>
FIG. 15 shows, as a comparative example, a schematic cross-sectional view (1) of an evaporation source 200 of a film forming apparatus that does not employ the configuration of the present invention. Vapor deposition material 5 is housed in a crucible 207 made of PBN (Pyrolytic Boron Nitride). The crucible 207 is heated by a heating unit (heater) 203 and the heat escaped by the reflector 204 is returned to the crucible 207 and the heating unit 203. The vapor deposition material 205 is heated by increasing the thermal efficiency. The heated vapor deposition material 205 is evaporated by sublimation or vaporization, and is ejected from the opening 209 of the crucible to deposit the vapor deposition material 205 on a substrate (not shown).
特に蒸着材料２０５がＡｌの場合、Ａｌは融点以下で蒸気圧が低いため温度を融点（６６０℃）以上に設定して溶融状態で蒸着する。この場合に、溶融したＡｌが坩堝２０７の内壁面に沿って上昇し、坩堝２０７からあふれ出る、いわゆる這い上がり現象が発生することが知られている。溶融したＡｌは図１４の坩堝（本体）２０７の内壁を這い上がり、温度等の条件によっては坩堝の開口部２０９の坩堝つば２０８上面を這い上がり、加熱部２０３の配置されている坩堝２０７と外筒２０６で囲まれた加熱室２１０に回り込む場合がある。Ａｌが加熱室２１０に入り込むと、加熱部２０３、リフレクタ２０４に付着反応して、加熱部２０３を劣化させ断線の原因になったり、加熱部２０３を支える図示しない絶縁碍子に堆積して導電性をもたせ、リフレクタ２０４に堆積し、表面導電性をもつ碍子を介して加熱部２０３とリフレクタ２０４（この場合接地されているとする）が電気的に短絡するなど、蒸着装置の蒸発源故障の原因となる問題があった。 In particular, when the vapor deposition material 205 is Al, since Al has a melting point or lower and a low vapor pressure, the temperature is set to a melting point (660 ° C.) or higher and vapor deposition is performed. In this case, it is known that a so-called creeping phenomenon occurs in which molten Al rises along the inner wall surface of the crucible 207 and overflows from the crucible 207. The molten Al scoops up the inner wall of the crucible (main body) 207 in FIG. 14 and scoops up the top surface of the crucible collar 208 of the crucible opening 209 depending on conditions such as temperature, and the crucible 207 where the heating unit 203 is disposed In some cases, the heating chamber 210 surrounded by the cylinder 206 may be surrounded. When Al enters the heating chamber 210, it adheres and reacts with the heating unit 203 and the reflector 204, causing the heating unit 203 to deteriorate and cause disconnection, or deposits on an insulator (not shown) that supports the heating unit 203 to make the conductivity. As a result of the evaporation source failure of the vapor deposition apparatus, the heating unit 203 and the reflector 204 (assumed to be grounded in this case) are electrically short-circuited through the insulator having surface conductivity. There was a problem.
また、大型基板の成膜では、基板を垂直にして横方向から蒸着する縦型蒸着が、マスクのたわみが無く合わせ精度をよくできるので、必須になりつつある。 Further, in the deposition of a large substrate, vertical deposition, in which the substrate is vertically oriented and deposited from the lateral direction, is becoming indispensable because there is no deflection of the mask and the alignment accuracy can be improved.
＜比較例２＞
図１６は、図１５と同様に、比較例として、本発明の構成を採用しない成膜装置の蒸発源２００の概略断面図（２）を示す。図１６では、坩堝の開口部２０９略水平方向を向いた（坩堝の開口部２０９の向きと、図示しない基板保持移動機構により保持された基板の表面の法線方向とが略０度である）蒸発源１００の例である。
<Comparative example 2>
FIG. 16 is a schematic cross-sectional view (2) of the evaporation source 200 of the film forming apparatus that does not employ the configuration of the present invention as a comparative example, as in FIG. In FIG. 16, the crucible opening 209 faces substantially in the horizontal direction (the direction of the crucible opening 209 and the normal direction of the surface of the substrate held by the substrate holding and moving mechanism (not shown) are approximately 0 degrees). It is an example of the evaporation source 100.
この蒸発源２００のＡｌは溶融された場合、溶融したＡｌが坩堝２０７の内壁面に沿って上昇し、坩堝からあふれ出る、這い上がり現象が発生する。また、Ａｌのスプラッシュが発する可能性もある。 When the Al in the evaporation source 200 is melted, the molten Al rises along the inner wall surface of the crucible 207 and overflows from the crucible. There is also the possibility of Al splash.
なお、この比較例２に対し、実施例１の図１（Ａ）では内側坩堝２が外側坩堝１の開口部９に直交して、奥まった位置に配置されているため、Ａｌのスプラッシュが発生した場合でも、外側坩堝１の内壁に衝突するだけで、基板１５へは到達しない。また、たとえＡｌが外側坩堝１の側面に流れ出たとしても、外側坩堝１は濡れ性が小さいので這い上がり現象の発生を防ぐことができる。 In contrast to the comparative example 2, since the inner crucible 2 is disposed at a position that is perpendicular to the opening 9 of the outer crucible 1 in FIG. Even if it does, it only collides with the inner wall of the outer crucible 1 and does not reach the substrate 15. Even if Al flows out to the side surface of the outer crucible 1, the outer crucible 1 has a low wettability, so that it is possible to prevent the creeping phenomenon from occurring.
本発明は、蒸着装置に関し、特に、故障、破損が起こりにくい蒸発源を有する成膜装置に利用可能である。 The present invention relates to a vapor deposition apparatus, and is particularly applicable to a film forming apparatus having an evaporation source that is unlikely to fail or break.
１ 外側坩堝
２ 内側坩堝（収容部）
３、２０３ 加熱部（ヒーター）
４、２０４ リフレクタ
５、２０５ 蒸着材料
６、２０６ 外筒
７、２０７ 坩堝
８、２０８ 坩堝つば
９ 外側坩堝の開口部
１０、２１０ 加熱室
１１、２１１ ノズル
１２ 蒸着材料供給路
１３ 支持構造
１４ 真空チャンバ
１５ 基板
１６ 有機薄膜
１７ メタルマスク
１８ 蒸発源群
１９ 膜厚モニタ
２０ 基板保持移動機構
２１ 移動ガイド
２２ 膜厚制御器
２３ 電源
２４ 移動機構制御器
２５ 制御器
２６ 蒸発源群等保持移動機構
２７ 蒸着材料蓄積部
２８ 蒸着材料供給制御器
２９ 蒸発源保持移動機構
３０ 内側坩堝の開口部
３１、２０９ 坩堝の開口部
１００、２００ 蒸発源
1 Outer crucible 2 Inner crucible (container)
3,203 Heating part (heater)
4, 204 Reflector 5, 205 Vapor deposition material 6, 206 Outer cylinder 7, 207 Crucible 8, 208 Crucible collar 9 Outer crucible opening 10, 210 Heating chamber 11, 211 Nozzle 12 Vapor deposition material supply path 13 Support structure 14 Vacuum chamber 15 Substrate 16 Organic thin film 17 Metal mask 18 Evaporation source group 19 Film thickness monitor 20 Substrate holding movement mechanism 21 Movement guide 22 Film thickness controller 23 Power supply 24 Movement mechanism controller 25 Controller 26 Evaporation source group holding movement mechanism 27 Evaporation material accumulation Unit 28 evaporation material supply controller 29 evaporation source holding and moving mechanism 30 inner crucible opening 31 and 209 crucible opening 100 and 200 evaporation source
Claims (16)
前記坩堝内の前記収容部に収容された蒸着材料を加熱する加熱部と、を有する蒸発源であって、
前記収容部の前記蒸着材料に対する濡れ性は、前記開口部の前記蒸着材料に対する濡れ性よりも大きいことを特徴とする蒸発源。 A crucible provided with a housing part for housing the vapor deposition material, and an opening for radiating the vapor of the vapor deposition material housed in the housing part to the outside;
A heating part for heating the vapor deposition material accommodated in the accommodating part in the crucible,
The evaporation source characterized in that the wettability of the housing part with respect to the vapor deposition material is greater than the wettability of the opening with respect to the vapor deposition material.
前記坩堝は、前記収容部を備えた内側坩堝と、前記開口部を備えた外側坩堝とで構成することを特徴とする蒸発源。 The evaporation source according to claim 1,
The said crucible is comprised with the inner side crucible provided with the said accommodating part, and the outer side crucible provided with the said opening part, The evaporation source characterized by the above-mentioned.
前記内側坩堝の開口部の向きと、前記外側坩堝の開口部の向きが異なることを特徴とする蒸発源。 The evaporation source according to claim 2,
An evaporation source, wherein the direction of the opening of the inner crucible is different from the direction of the opening of the outer crucible.
前記内側坩堝の底面部と、前記外側坩堝の側面部が接することを特徴とする蒸発源。 The evaporation source according to claim 2 or 3,
An evaporation source, wherein a bottom surface portion of the inner crucible and a side surface portion of the outer crucible are in contact with each other.
前記加熱部を前記収容部の近傍に配置したことを特徴とする蒸発源。 The evaporation source according to any one of claims 1 to 4,
An evaporation source, wherein the heating unit is disposed in the vicinity of the housing unit.
前記坩堝は、前記開口部に対向する位置に底面部を有し、
前記坩堝の開口部から底面部までの長さは、前記坩堝の開口部の直径または長手方向の長さよりも大きいことを特徴とする蒸発源。 The evaporation source according to any one of claims 1 to 5,
The crucible has a bottom surface at a position facing the opening,
The evaporation source characterized in that the length from the opening of the crucible to the bottom is larger than the diameter or the length in the longitudinal direction of the opening of the crucible.
前記坩堝の外部にある蒸着材料蓄積部から前記収容部へ蒸着材料を供給する蒸着材料供給手段を備えたことを特徴とする蒸発源。 The evaporation source according to any one of claims 1 to 6,
An evaporation source comprising: an evaporation material supply means for supplying an evaporation material from an evaporation material accumulation part outside the crucible to the housing part.
前記蒸着材料供給手段は、前記収容部の蒸着材料の蓄積状態を検出し、前記蒸着材料の蓄積状態に基づいて前記収容部への蒸着材料の供給を中止することを特徴とする蒸発源。 The evaporation source according to claim 7,
The evaporation source is characterized in that the vapor deposition material supply means detects an accumulation state of the vapor deposition material in the storage unit and stops supply of the vapor deposition material to the storage unit based on the accumulation state of the vapor deposition material.
前記蒸着材料供給手段は、前記坩堝の底面部または側面部を通って前記収容部に接続することを特徴とする蒸発源。 The evaporation source according to claim 7 or 8,
The evaporation source is characterized in that the vapor deposition material supply means is connected to the accommodating portion through a bottom surface portion or a side surface portion of the crucible.
前記蒸着材料供給手段は、基板へ成膜しないタイミングで蒸着材料の供給を行うことを特徴とする蒸発源。 An evaporation source according to any one of claims 7 to 9,
The evaporation source is characterized in that the evaporation material supply means supplies the evaporation material at a timing when no film is formed on the substrate.
前記蒸着材料はアルミであることを特徴とする蒸発源。 The evaporation source according to any one of claims 1 to 10,
An evaporation source, wherein the vapor deposition material is aluminum.
前記開口部の表面は、溶融したアルミに対する接触角が３０度以上の物質からなり、
前記収容部の表面は、溶融したアルミに対する接触角が３０度未満の物質からなることを特徴とする蒸発源。 The evaporation source according to claim 11,
The surface of the opening is made of a material having a contact angle with molten aluminum of 30 degrees or more,
The evaporation source characterized in that the surface of the housing portion is made of a material having a contact angle with molten aluminum of less than 30 degrees.
基板を保持する基板保持部とを有する成膜装置であって、
前記蒸発源または前記基板保持部のうち一方が走査し、他方が静止することで基板を成膜することを特徴とする成膜装置。 An evaporation source group configured by arranging a plurality of evaporation sources according to any one of claims 1 to 12,
A film forming apparatus having a substrate holding unit for holding a substrate,
One of the evaporation source and the substrate holding portion scans, and the other is stationary to form a substrate.
前記坩堝の開口部の向きと、前記基板保持部により保持された基板の表面の法線方向とが−５〜６０度の範囲にあることを特徴とする成膜装置。 The film forming apparatus according to claim 13,
The film forming apparatus, wherein the direction of the opening of the crucible and the normal direction of the surface of the substrate held by the substrate holder are in the range of −5 to 60 degrees.
前記蒸発源が走査し、前記基板保持部が静止する場合において、前記蒸着材料蓄積部は静止していることを特徴とする成膜装置。 The film forming apparatus according to claim 13 or 14,
When the evaporation source scans and the substrate holding part is stationary, the deposition material accumulation part is stationary.
前記蒸発源群のうち第１の蒸発源と第２の蒸発源とで、蒸着材料は異なるものであることを特徴とする成膜装置。 The film forming apparatus according to any one of claims 13 to 15,
The film forming apparatus, wherein the first evaporation source and the second evaporation source in the evaporation source group have different vapor deposition materials.
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| JP2011215911A JP5557817B2 (en) | 2011-09-30 | 2011-09-30 | Evaporation source and film forming apparatus |
| TW101128967A TW201319282A (en) | 2011-09-30 | 2012-08-10 | Evaporation source and film forming device |
| KR1020120091802A KR20130035863A (en) | 2011-09-30 | 2012-08-22 | Evaporation source and film forming apparatus |
| CN201210304156XA CN103031520A (en) | 2011-09-30 | 2012-08-24 | Evaporation source and film forming device |
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| CN109913818A (en) * | 2017-12-12 | 2019-06-21 | 佳能特机株式会社 | Evaporation source and evaporation coating device |
| CN114959589A (en) * | 2022-07-04 | 2022-08-30 | 宁波卢米蓝新材料有限公司 | Evaporation crucible |
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| CN103952668B (en) * | 2014-05-14 | 2016-04-13 | 深圳市华星光电技术有限公司 | The heating container that can detect and prevent high temperature metallic material from revealing and manufacture method |
| KR102184356B1 (en) * | 2019-02-27 | 2020-11-30 | 캐논 톡키 가부시키가이샤 | Film forming apparatus, film forming method and manufacturing method of electronic device |
| JP7241604B2 (en) * | 2019-05-28 | 2023-03-17 | キヤノントッキ株式会社 | Heating device, evaporation source device, film forming device, film forming method, and electronic device manufacturing method |
| KR102648128B1 (en) * | 2021-08-30 | 2024-03-15 | 주식회사 야스 | Vertical Linear Evaporation Source |
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| TW201319282A (en) | 2013-05-16 |
| JP5557817B2 (en) | 2014-07-23 |
| KR20130035863A (en) | 2013-04-09 |
| CN103031520A (en) | 2013-04-10 |
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