JP2013065917A - Exposure device and device manufacturing method - Google Patents

Exposure device and device manufacturing method Download PDF

Info

Publication number
JP2013065917A
JP2013065917A JP2013007826A JP2013007826A JP2013065917A JP 2013065917 A JP2013065917 A JP 2013065917A JP 2013007826 A JP2013007826 A JP 2013007826A JP 2013007826 A JP2013007826 A JP 2013007826A JP 2013065917 A JP2013065917 A JP 2013065917A
Authority
JP
Japan
Prior art keywords
light
filter
exposure apparatus
incident
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013007826A
Other languages
Japanese (ja)
Other versions
JP5513636B2 (en
Inventor
Naoya Iizuka
直哉 飯塚
Buntaro Masaki
文太郎 正木
Akira Miyake
明 三宅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2013007826A priority Critical patent/JP5513636B2/en
Publication of JP2013065917A publication Critical patent/JP2013065917A/en
Application granted granted Critical
Publication of JP5513636B2 publication Critical patent/JP5513636B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an exposure device which eliminates a light adversely affecting exposure and performs exposure.SOLUTION: An exposure device comprises a filter which reflects a first light having a first wavelength and transmits a second light having a second wavelength shorter than the first wavelength in a second direction, the first and second lights being included in lights emitted from a light source. The filter includes a member on which a plurality of openings arranged along a first direction orthogonal to the second direction are formed. A wall surface of the member extends along the second direction. An end surface on the light incident side of the member is inclined to a surface perpendicular to the second direction so that the first light is reflected in a direction which is not parallel to the second direction. A substrate is exposed by the second light which transmitted through the filter in the second direction.

Description

本発明は、露光装置及びデバイス製造方法に関する。   The present invention relates to an exposure apparatus and a device manufacturing method.

ＥＵＶ（Extreme Ultra-Violet）光源として、プラズマ光源にはレーザープラズマ光源（ＬＰＰ）、放電型プラズマ光源（ＤＰＰ）などのプラズマ光源が用いられる。例えば、ＬＰＰでは、真空容器中に置かれたターゲット材に高強度のパルスレーザー光を照射し、高温のプラズマを発生させ、これから放射される例えば波長１３．５ｎｍ程度のＥＵＶ光を利用する。ターゲット材としては、金属、不活性ガスなどが用いられる。ターゲットから放射されるＥＵＶ光の平均強度を高くするためにはパルスレーザーの繰り返し周波数の高い方が良く、通常数ｋＨｚの繰り返し周波数で運転される。また、ターゲットから放射されるＥＵＶ光を効率よく利用するために集光ミラーが設けられている。集光ミラーには、モリブデンとシリコンの膜を交互に６０層ほど積層させた多層膜ミラーや金属をコーティングした斜入射ミラーなどが使用される。照明光学系は、複数の多層膜ミラー、斜入射ミラー、反射型インテグレータ等から構成される。反射型インテグレータはマスクを均一に所定の開口数で照明する役割を持っている。反射型インテグレータには平行化されたＥＵＶ光が入射され、焦点距離ｆの位置に二次光源を作る。   As an EUV (Extreme Ultra-Violet) light source, a plasma light source such as a laser plasma light source (LPP) or a discharge plasma light source (DPP) is used as the plasma light source. For example, in LPP, a target material placed in a vacuum vessel is irradiated with high-intensity pulsed laser light to generate high-temperature plasma, and EUV light having a wavelength of about 13.5 nm, for example, emitted from the plasma is used. As the target material, a metal, an inert gas, or the like is used. In order to increase the average intensity of EUV light emitted from the target, it is better that the repetition frequency of the pulse laser is higher, and it is usually operated at a repetition frequency of several kHz. In addition, a condensing mirror is provided to efficiently use EUV light emitted from the target. As the condenser mirror, a multilayer film mirror in which about 60 layers of molybdenum and silicon films are alternately laminated, a grazing incidence mirror coated with metal, or the like is used. The illumination optical system includes a plurality of multilayer mirrors, a grazing incidence mirror, a reflective integrator, and the like. The reflective integrator has a role of uniformly illuminating the mask with a predetermined numerical aperture. The collimated EUV light is incident on the reflective integrator, and a secondary light source is formed at the position of the focal length f.

照明系から供給されたＥＵＶ光は原版であるレチクルで反射され、６〜８枚の多層膜ミラーからなる投影光学系で１／４に縮小されて、レジストが塗布されたウエハに照射される。レチクル及びウエハは、それぞれレチクルステージ及びウエハステージに保持され、アライメント光学系で精密に位置合わせ、フォーカス検出光学系で精密にフォーカスされた状態で、縮小倍率に比例した速度比で同期して走査する。このようにして、レチクルの縮小投影像がウエハ上に結像した状態でそれらを同期走査するという動作が繰り返される（ステップ・アンド・スキャン）。こうして、ウエハ全面にレチクルの転写パターンが転写される。   The EUV light supplied from the illumination system is reflected by a reticle as an original, is reduced to ¼ by a projection optical system comprising 6 to 8 multilayer mirrors, and is applied to a resist-coated wafer. The reticle and the wafer are respectively held by the reticle stage and the wafer stage, precisely aligned by the alignment optical system, and scanned in synchronism with a speed ratio proportional to the reduction magnification while being precisely focused by the focus detection optical system. . In this manner, the operation of synchronously scanning the reduced projection image of the reticle formed on the wafer is repeated (step-and-scan). Thus, the reticle transfer pattern is transferred onto the entire wafer surface.

プラズマ光源は所望のＥＵＶ光だけでなく、赤外領域からＥＵＶまでの不要な光（Out of Band光：以下ＯｏＢ光）も発生する。これらＯｏＢ光はフレアとなってウエハ上の光のコントラストを低減させたり、ウエハを熱膨張させたりする。また、ミラーの熱負荷を増大させるため、特に投影系のミラーに関して問題となる。   The plasma light source generates not only desired EUV light but also unnecessary light from the infrared region to EUV (Out of Band light: hereinafter referred to as OoB light). These OoB light flares to reduce the contrast of the light on the wafer or to thermally expand the wafer. Further, since the thermal load of the mirror is increased, there is a problem particularly with respect to the mirror of the projection system.

ＯｏＢ光を除去するためにフィルタ（Spectral Purity Filter）を光路に設置して、所望のＥＵＶ光だけを選択的に透過させる方法が、特許文献１及び非特許文献１に開示されている。非特許文献１では、ＯｏＢ光の波長より小さな開口を設け、ＥＵＶ光だけを透過させてＯｏＢ光（赤外光）を反射させる。   Patent Document 1 and Non-Patent Document 1 disclose a method of selectively transmitting only desired EUV light by installing a filter (Spectral Purity Filter) in an optical path in order to remove OoB light. In Non-Patent Document 1, an opening smaller than the wavelength of OoB light is provided, and only EUV light is transmitted and OoB light (infrared light) is reflected.

特開２００６−１９１０９０号公報JP 2006-191090 A

Wouter A. Soer, Grid spectralpurityfilters for suppression of infrared radiation in laser-produced plasmaEUV sources, Proc. Of SPIE Vol. 7271 72712Y-8(2009)Wouter A. Soer, Grid spectralpurityfilters for suppression of infrared radiation in laser-produced plasma EUV sources, Proc. Of SPIE Vol. 7271 72712Y-8 (2009)

しかし、従来のフィルタがＯｏＢ光(赤外光)を上流のミラーに向けて反射させるため、ミラーやチャンバ等の部材を加熱してしまう。また、設計外の光路を通るため照明系だけでなく、投影光学系の光学素子やウエハ上にも迷光となった赤外光が到達し、加熱するという問題がある。   However, since the conventional filter reflects OoB light (infrared light) toward the upstream mirror, the members such as the mirror and the chamber are heated. Further, since the light path passes through a non-designed optical path, there is a problem that the infrared light that has become stray light reaches not only the illumination system but also the optical element of the projection optical system and the wafer and heats it.

そこで、本発明は、露光に悪影響を及ぼす光を排除して露光を行う露光装置を提供することを目的とする。 Therefore, an object of the present invention is to provide an exposure apparatus that performs exposure while eliminating light that adversely affects exposure .

本発明の露光装置は、第１波長を有する第１の光と前記第１波長より短い第２波長を有する第２の光とを含む光を出射する光源からの前記第１の光を反射し前記第２の光を第２方向に透過させるフィルタを備え、前記フィルタは、前記第２方向と直交する第１方向に沿って並んだ複数の開口を形成する部材を含み、前記部材の壁面は前記第２方向に沿って延び、前記部材の光入射側の端面は、前記第１の光を前記第２方向と平行でない方向に反射するように、前記第２方向に垂直な面に対して傾けてあり、前記フィルタを前記第２方向に透過した前記第２の光により基板を露光することを特徴とする。The exposure apparatus of the present invention reflects the first light from a light source that emits light including first light having a first wavelength and second light having a second wavelength shorter than the first wavelength. The filter includes a filter that transmits the second light in a second direction, and the filter includes a member that forms a plurality of openings arranged in a first direction orthogonal to the second direction, and the wall surface of the member is The end surface of the member on the light incident side that extends along the second direction reflects the first light in a direction that is not parallel to the second direction, and is perpendicular to the surface that is perpendicular to the second direction. The substrate is exposed with the second light that is inclined and transmitted through the filter in the second direction.

本発明によれば、露光に悪影響を及ぼす光を排除して露光を行う露光装置を提供することができる。 According to the present invention, it is possible to provide an exposure apparatus that performs exposure while eliminating light that adversely affects exposure .

第１実施形態のフィルタを示した図である。It is the figure which showed the filter of 1st Embodiment. 第１実施形態のフィルタが赤外光を反射する様子を示した図である。It is the figure which showed a mode that the filter of 1st Embodiment reflected infrared light. 第１実施形態のフィルタを示した図である。It is the figure which showed the filter of 1st Embodiment. 第２実施形態のフィルタを示した図である。It is the figure which showed the filter of 2nd Embodiment. 第３実施形態のフィルタを示した図である。It is the figure which showed the filter of 3rd Embodiment. 第４実施形態のフィルタを示した図である。It is the figure which showed the filter of 4th Embodiment. 第４実施形態のフィルタが赤外光を反射する様子を示した図である。It is the figure which showed a mode that the filter of 4th Embodiment reflected infrared light. 第４実施形態のフィルタを示した図である。It is the figure which showed the filter of 4th Embodiment. 第６実施形態のフィルタを示した図である。It is the figure which showed the filter of 6th Embodiment. 第６実施形態のフィルタが赤外光を反射する様子を示した図である。It is the figure which showed a mode that the filter of 6th Embodiment reflected infrared light. 第７実施形態のフィルタを示した図である。It is the figure which showed the filter of 7th Embodiment. 第８実施形態のフィルタを示した図である。It is the figure which showed the filter of 8th Embodiment.

本発明の露光装置は、第１波長を有する第１の光と第１波長より短い第２波長を有する第２の光とを含む光を出射する光源と、光源から入射された光のうち、第１の光を反射し、第２の光を透過させるフィルタとを備える。露光装置は、さらに光源から出射された光の光路外に配置され、第１の光を吸収する吸収部材を備える。フィルタで反射された第１の光は、吸収部材に向けて反射される。露光装置は、フィルタを透過した第２の光で基板を露光する。第１の光は例えば赤外光であり、第２の光は例えばＥＵＶ光である。フィルタに入射した第１の光（赤外光）は入射した方向とは異なる方向に反射され、戻り光となることが防げる。フィルタに入射した第２の波長の光（ＥＵＶ光）がフィルタの内壁にけられた損失は最小限に抑えられるようにフィルタが構成される。   The exposure apparatus of the present invention includes a light source that emits light including first light having a first wavelength and second light having a second wavelength shorter than the first wavelength, and among light incident from the light source, And a filter that reflects the first light and transmits the second light. The exposure apparatus further includes an absorbing member that is disposed outside the optical path of the light emitted from the light source and absorbs the first light. The first light reflected by the filter is reflected toward the absorbing member. The exposure apparatus exposes the substrate with the second light transmitted through the filter. The first light is, for example, infrared light, and the second light is, for example, EUV light. The first light (infrared light) incident on the filter is reflected in a direction different from the incident direction, and can be prevented from becoming return light. The filter is configured so that the loss of the second wavelength light (EUV light) incident on the filter on the inner wall of the filter is minimized.

例えば、赤外光の波長より十分に薄い複数の板状部材を、赤外光の波長より十分に小さくかつＥＵＶ光の波長より大きい間隔で互いに平行となるように並べることで、入射する赤外光を反射しＥＵＶ光を透過することができる。このとき反射されるのは入射する赤外光の偏光成分のうち、電気ベクトルが板状部材に平行な偏光であり、電気ベクトルが板状部材に垂直な偏光は透過する。よって、露光装置において、入射する赤外光の偏光が直線偏光あるいは直線偏光に近い場合、１個のフィルタが赤外光の電気ベクトルと板状部材とが平行になるように配置される。偏光状態がランダム又はランダムに近い赤外光が入射する場合、板状部材によるフィルタは２個使用される。２個のフィルタをそれらの板状部材が互いにが直交する関係になるように同一光路中に配置することで、入射した赤外光の全方向成分の偏光を反射することができる。   For example, a plurality of plate-like members that are sufficiently thinner than the wavelength of infrared light are arranged so as to be parallel to each other at intervals sufficiently smaller than the wavelength of infrared light and larger than the wavelength of EUV light, thereby making incident infrared rays It can reflect light and transmit EUV light. Of the polarized components of the incident infrared light, the polarized light whose electric vector is parallel to the plate-like member is transmitted and polarized light whose electric vector is perpendicular to the plate-like member is transmitted. Therefore, in the exposure apparatus, when the polarized light of the incident infrared light is linearly polarized light or nearly linearly polarized light, one filter is arranged so that the electrical vector of the infrared light and the plate member are parallel to each other. When infrared light whose polarization state is random or close to random is incident, two filters using plate-like members are used. By arranging the two filters in the same optical path so that their plate-like members are orthogonal to each other, polarized light of the omnidirectional component of incident infrared light can be reflected.

フィルタが光の入射方向（第２方向）と直交する第１方向に沿って配置された複数の板状部材で構成されている場合、板状部材の光入射側の端面によって形成される包絡面は、第１方向と非平行な平面をなすか、又は、光路外に曲率中心を持つ曲面をなす。フィルタが第１方向に沿って配置された複数の開口を有する部材で構成されている場合、前記部材の端面は、やはり、第１方向と非平行な平面をなすか、又は、光路外に曲率中心を持つ曲面をなす。露光装置内に設置したフィルタにより反射された赤外光はチャンバや保持部などの露光装置の構成部材を暖めてしまう。反射された赤外光を吸収する吸収部材を設置することで、赤外光が露光装置の構成部材を暖めてしまうことを防止することができる。吸収部材は露光光の光路外に設置される。フィルタの設置角度は、反射された赤外光が吸収部材へ向かうように決定される。   When the filter is composed of a plurality of plate-like members arranged along a first direction orthogonal to the light incident direction (second direction), an envelope surface formed by the light incident side end face of the plate-like member Forms a plane that is not parallel to the first direction, or a curved surface having a center of curvature outside the optical path. When the filter is composed of a member having a plurality of openings arranged along the first direction, the end surface of the member also forms a plane non-parallel to the first direction or has a curvature outside the optical path. Make a curved surface with a center. Infrared light reflected by a filter installed in the exposure apparatus warms components of the exposure apparatus such as a chamber and a holding unit. By installing the absorbing member that absorbs the reflected infrared light, it is possible to prevent the infrared light from warming the constituent members of the exposure apparatus. The absorbing member is installed outside the optical path of the exposure light. The installation angle of the filter is determined so that the reflected infrared light is directed toward the absorbing member.

露光装置のサイズは小型であることが好ましく、そのためには装置内の各素子がコンパクトであれば配置の自由度が上がるため設計が容易となる。吸収部材のサイズを小さくするためにはフィルタで反射する赤外光を集光する必要がある。フィルタ表面に曲率を持たせることで、フィルタで反射する赤外光を集光して吸収部材へ導くことができる。露光装置内に設置したフィルタへの入射光は必ずしも平行光であるとは限らない。フィルタへの入射光が集光光もしくは発散光であった場合、フィルタへの入射光の角度はフィルタの面内で一定ではない。フィルタを構成する全ての内壁が互いに平行である場合、ある場所で入射光に対して内壁が平行になるように設置すると、その場所以外ではＥＵＶ光がけられてしまうため、ＥＵＶ光の透過率が低下する。そこで、フィルタの各内壁の角度を、その場所での入射光と各々平行にすることで、ＥＵＶ光の透過率の低下を防ぐことができる。以下に、本発明の実施形態を添付の図面に基づいて詳細に説明する。   The size of the exposure apparatus is preferably small. For this purpose, if each element in the apparatus is compact, the degree of freedom in arrangement increases, and the design becomes easy. In order to reduce the size of the absorbing member, it is necessary to collect infrared light reflected by the filter. By giving curvature to the filter surface, infrared light reflected by the filter can be condensed and guided to the absorbing member. Incident light to the filter installed in the exposure apparatus is not necessarily parallel light. When the incident light to the filter is condensed light or divergent light, the angle of the incident light to the filter is not constant in the plane of the filter. When all the inner walls constituting the filter are parallel to each other, if the inner wall is placed so as to be parallel to the incident light at a certain location, the EUV light is scattered at other locations, so that the EUV light transmittance is high. descend. Thus, by making the angle of each inner wall of the filter parallel to the incident light at that location, it is possible to prevent a decrease in the transmittance of EUV light. Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

〔第１実施形態〕
図１に基づいて第１実施形態のフィルタ１０について説明する。フィルタ１０は、複数の板状部材１１を赤外光の波長より小さくＥＵＶ光の波長より大きな一定の間隙をおいて平行に並べて配置した構造を有し、正面から見るとスリット状の開口が並んでいる。フィルタ１０は、入射光１２に対して板状部材１１の内壁１１ａが平行となり、入射光１２の入射側の端面１１ｂによって形成される包絡面１１ｃが、入射光の進行方向（第２方向）と非平行な平面をなすように配置されている。つまり、包絡面１１ｃが入射光の進行方向に垂直な面に対して傾くようにフィルタ１０が設置されている。複数の板状部材１１はホルダ１４により支持されている。 [First Embodiment]
A filter 10 according to the first embodiment will be described with reference to FIG. The filter 10 has a structure in which a plurality of plate-like members 11 are arranged in parallel with a certain gap smaller than the wavelength of infrared light and larger than the wavelength of EUV light, and slit-like openings are arranged when viewed from the front. It is out. In the filter 10, the inner wall 11 a of the plate-like member 11 is parallel to the incident light 12, and the envelope surface 11 c formed by the end surface 11 b on the incident side of the incident light 12 is the incident light traveling direction (second direction). They are arranged to form a non-parallel plane. That is, the filter 10 is installed so that the envelope surface 11c is inclined with respect to a plane perpendicular to the traveling direction of incident light. The plurality of plate-like members 11 are supported by a holder 14.

図２はフィルタ１０をＥＵＶ露光装置に搭載した時の、入射光１２とフィルタ１０との関係を模式的に表したものである。照明系の光路中で露光光が平行化されている場所にフィルタ１０を挿入する。図２において左側が照明系の上流側、右側が下流側である。１２は入射光である。フィルタ１０の上流では赤外光とＥＵＶ光が混ざった状態である。フィルタ１０により、赤外光が反射され、ＥＵＶ光が下流の光学系へと導かれる。反射された赤外光１５が迷光となって露光装置を暖めないように、反射された赤外光１５を吸収するための吸収部材１６を露光光の光路外に設置する。ここで入射光１２の作るベクトルと入射点と吸収部材１６を結ぶベクトルで決まる角度を二分するようにフィルタ１０の入射側の包絡面１１ｃにおける法線１３の角度が設定されている。フィルタ１０の内壁１１ａと入射光１２とは平行である。フィルタ１０を挿入したことによる露光光の損失は図１の正面図で示した板状部材１１の端面１１ｂをなす部分にＥＵＶ光が当たる場合だけである。板状部材１１の壁面でＥＵＶ光がけられることがないため、ＥＵＶ光の損失は最小限に抑えられる。   FIG. 2 schematically shows the relationship between the incident light 12 and the filter 10 when the filter 10 is mounted on an EUV exposure apparatus. A filter 10 is inserted at a place where the exposure light is collimated in the optical path of the illumination system. In FIG. 2, the left side is the upstream side of the illumination system, and the right side is the downstream side. Reference numeral 12 denotes incident light. Upstream of the filter 10, infrared light and EUV light are mixed. The filter 10 reflects infrared light and guides EUV light to a downstream optical system. An absorbing member 16 for absorbing the reflected infrared light 15 is installed outside the optical path of the exposure light so that the reflected infrared light 15 becomes stray light and does not warm the exposure apparatus. Here, the angle of the normal line 13 in the envelope surface 11c on the incident side of the filter 10 is set so as to bisect the angle determined by the vector formed by the incident light 12 and the vector connecting the incident point and the absorbing member 16. The inner wall 11a of the filter 10 and the incident light 12 are parallel. The loss of exposure light due to the insertion of the filter 10 is only when EUV light strikes the portion forming the end surface 11b of the plate-like member 11 shown in the front view of FIG. Since EUV light is not scattered on the wall surface of the plate-like member 11, the loss of EUV light is minimized.

本実施形態に用いるフィルタ１０は、板状部材１１を並べて配置したものであるため、板状部材１１に平行な偏光成分しか反射することができない。よって、フィルタ１０に入射する赤外光の偏光状態がランダムである場合、同様のフィルタ（第２フィルタ）１０’をもう一枚使用する。２枚目のフィルタ１０’は、第１方向及び第２方向に直交する方向に沿って並んだ複数の開口を形成する第２部材を含んでいる。２枚目のフィルタ１０’は１枚目のフィルタ１０に対してスリットの長手方向が直交するような向きで、同一光路上に設置される。赤外光を入射光１２とは異なる方向に反射させるため、２枚目のフィルタ１０’も１枚目のフィルタ１０と同様に包絡面が入射光の進行方向に垂直な面に対して傾くようにフィルタ１０が設置されている。 Since the filter 10 used in the present embodiment has the plate-like members 11 arranged side by side, only the polarization component parallel to the plate-like member 11 can be reflected. Therefore, when the polarization state of the infrared light incident on the filter 10 is random, another similar filter (second filter) 10 ′ is used. The second filter 10 ′ includes a second member that forms a plurality of openings arranged along a direction orthogonal to the first direction and the second direction. The second filter 10 ′ is installed on the same optical path in such a direction that the longitudinal direction of the slit is orthogonal to the first filter 10. In order to reflect the infrared light in a direction different from the incident light 12, the second filter 10 ′ is inclined with respect to the plane perpendicular to the traveling direction of the incident light in the second filter 10 ′ as well as the first filter 10. A filter 10 is installed.

フィルタ１０全体のサイズは露光装置中の設置場所のビームサイズと同サイズ以上とするため、例えば３０ｍｍ×３０ｍｍ程度である。フィルタ１０は照明系の光路中で露光光が平行化されている場所に設置される。またこのときフィルタ１０の内壁１１ａと入射光とが平行になるように設置される。図３に示されるように、板状部材１１が配置される間隔をｄ、板状部材１１の厚さをｔ、板状部材１１の幅をｈ、板状部材１１の壁面と入射光１２とがなす角をθとすると、θによるＥＵＶ光の損失は、板状部材１１の射影面積から以下の式のように表すことができる。
ｈ*ｔａｎθ／（ｄ−ｔ）・・・（１） The overall size of the filter 10 is, for example, about 30 mm × 30 mm so as to be equal to or larger than the beam size at the installation location in the exposure apparatus. The filter 10 is installed in a place where the exposure light is collimated in the optical path of the illumination system. At this time, the filter is installed so that the inner wall 11a of the filter 10 and the incident light are parallel to each other. As shown in FIG. 3, the interval at which the plate members 11 are arranged is d, the thickness of the plate members 11 is t, the width of the plate members 11 is h, the wall surface of the plate members 11 and the incident light 12. If the angle formed by θ is θ, the loss of EUV light due to θ can be expressed by the following expression from the projected area of the plate-like member 11.
h * tan θ / (dt) (1)

本実施形態において、板状部材１１の壁面と入射光１２とが角度をなすことによるＥＵＶ光の光量損失が２０％以下であることが好ましい。すなわち、ｄ、ｈ、ｔ、θの関係は（２）式のようになり、θが満たすべき値の範囲は（３）式で表される。
ｈ*ｔａｎθ／（ｄ−ｔ）≦０．２・・・（２）
θ≦ｔａｎ-1｛０．２＊（ｄ−ｔ）／ｈ｝・・・（３） In the present embodiment, it is preferable that the light amount loss of the EUV light due to the angle between the wall surface of the plate-like member 11 and the incident light 12 is 20% or less. That is, the relationship between d, h, t, and θ is expressed by equation (2), and the range of values that θ should satisfy is expressed by equation (3).
h * tan θ / (d−t) ≦ 0.2 (2)
θ ≦ tan −1 {0.2 * (dt) / h} (3)

プラズマ光源、特にＣＯ２レーザーを励起レーザーとしたＬＰＰの場合、問題となる赤外光の波長は１０．６μｍである。この波長の赤外光を許容値まで除去するためには、ｄが５μｍ、ｔが０．５μｍ、ｈが５μｍ程度である。よって、（３）式から、θはおよそ１０度以下となることがわかる。ここで図２に基づいて、板状部材の端面１１ｂが形成する包絡面１１ｃにおける法線１３と入射光１２とがなす角度について説明する。平行化された入射光１２の直径をａ、板状部材の端面１１ｂが形成する包絡面１１ｃにおける法線１３と入射光１２がなす角度をφとすると、入射光１２と反射光１５とを分離するために必要なフィルタ１０からの距離ｘは（４）式で表される。
ｘ＝ａ/ｔａｎ（２φ）・・・（４） In the case of an LPP using a plasma light source, particularly a CO 2 laser as an excitation laser, the wavelength of infrared light in question is 10.6 μm. In order to remove infrared light having this wavelength to an allowable value, d is about 5 μm, t is about 0.5 μm, and h is about 5 μm. Therefore, from equation (3), it can be seen that θ is about 10 degrees or less. Here, based on FIG. 2, an angle formed by the normal line 13 and the incident light 12 on the envelope surface 11 c formed by the end surface 11 b of the plate-like member will be described. When the diameter of the collimated incident light 12 is a and the angle formed by the normal line 13 and the incident light 12 on the envelope surface 11c formed by the end surface 11b of the plate member is φ, the incident light 12 and the reflected light 15 are separated. The distance x from the filter 10 necessary for this is expressed by equation (4).
x = a / tan (2φ) (4)

本実施形態において、板状部材の端面１１ｂが形成する包絡面１１ｃにおける法線１３と入射光１２とがなす角度φは２０°程度である。入射光１２の直径ａが２５ｍｍであるとき、フィルタ１０の設置位置を上流側の光学素子より３０ｍｍ以上離れた位置とすることで入射光１２と反射された赤外光１５を分離することができる。反射された赤外光１５は露光装置内に設置された吸収部材１６により吸収される。吸収部材１６に吸収される赤外光は数１００Ｗ以上であるため、吸収部材１６からの輻射熱を防ぐための水冷機構が備えられていることが望ましい。   In the present embodiment, the angle φ formed between the normal 13 and the incident light 12 in the envelope surface 11c formed by the end surface 11b of the plate-like member is about 20 °. When the diameter a of the incident light 12 is 25 mm, the incident light 12 and the reflected infrared light 15 can be separated by setting the filter 10 at a position 30 mm or more away from the upstream optical element. . The reflected infrared light 15 is absorbed by the absorbing member 16 installed in the exposure apparatus. Since the infrared light absorbed by the absorbing member 16 is several hundred W or more, it is desirable that a water cooling mechanism for preventing radiant heat from the absorbing member 16 is provided.

〔第２実施形態〕
図４に基づいて第２実施形態のフィルタ４０について説明する。ここでは第１実施形態との差異についてのみ記述する。図４は第２実施形態におけるフィルタ４０の正面図及び断面図である。第２実施形態におけるフィルタ４０は、複数の開口を有し入射光の進行方向（第２方向）に沿って延びる部材４１の入射光の入射側における端面４１ｃが平面をなすように複数の板状部材が２次元に配置した構造を有している。開口の形状は正四角形とされている。フィルタ４０の開口が２次元に配置されているので赤外光の両偏光を同時に除去することができる。開口の形状は、円形、六角形でも同様の効果が得られる。入射光の入射側における部材４１の端面４１ｃにおける法線４２と各開口の軸４４とは斜めに交わっている。フィルタ４０は例えばＳｉの異方性エッチングで製作する。Ｓｉの異方性エッチングでフィルタを製作し、赤外光を反射するための金属膜を部材４１の表面全体に成膜する。複数の板状部材はホルダ４３により支持されている。 [Second Embodiment]
A filter 40 according to the second embodiment will be described with reference to FIG. Here, only differences from the first embodiment will be described. FIG. 4 is a front view and a cross-sectional view of the filter 40 in the second embodiment. The filter 40 in the second embodiment has a plurality of plate-like shapes such that the end surface 41c on the incident light incident side of the member 41 having a plurality of openings and extending along the traveling direction (second direction) of the incident light forms a plane. The member has a structure arranged in two dimensions. The shape of the opening is a regular square. Since the openings of the filter 40 are two-dimensionally arranged, both polarizations of infrared light can be removed simultaneously. The same effect can be obtained even if the shape of the opening is circular or hexagonal. The normal line 42 on the end surface 41c of the member 41 on the incident light incident side and the axis 44 of each opening intersect obliquely. The filter 40 is manufactured by, for example, anisotropic etching of Si. A filter is manufactured by anisotropic etching of Si, and a metal film for reflecting infrared light is formed on the entire surface of the member 41. The plurality of plate-like members are supported by the holder 43.

第２実施形態の露光装置において、フィルタ４０は照明系の光路中で露光光が平行化されている場所に挿入され、開口の軸４４が入射光と平行になるように設置される。このとき開口がアレイ状に配置された部材４１の入射側の端面４１ｃにおける法線４２は、入射光と斜めに交わっている。フィルタ４０の上流側から入射する赤外光とＥＵＶ光は、フィルタ４０により、赤外光は入射した方向とは異なる方向に反射され、ＥＵＶ光は下流の光学系に導かれる。反射された赤外光が迷光となって露光装置を暖めないように、反射された赤外光を吸収するための吸収部材１６を露光光の光路外に設置する。ここで入射光の作るベクトルと入射点と吸収部材１６とを結ぶベクトルで決まる角度を二分するようにフィルタ４０の入射側の端面４１ｃにおける法線の角度が設定されている。   In the exposure apparatus of the second embodiment, the filter 40 is inserted at a position where the exposure light is collimated in the optical path of the illumination system, and is installed so that the axis 44 of the opening is parallel to the incident light. At this time, the normal line 42 on the end surface 41c on the incident side of the member 41 in which the openings are arranged in an array intersects the incident light obliquely. The infrared light and EUV light incident from the upstream side of the filter 40 are reflected by the filter 40 in a direction different from the incident direction, and the EUV light is guided to the downstream optical system. An absorbing member 16 for absorbing the reflected infrared light is placed outside the optical path of the exposure light so that the reflected infrared light becomes stray light and does not warm the exposure apparatus. Here, the angle of the normal to the end surface 41c on the incident side of the filter 40 is set so as to bisect the angle determined by the vector formed by the incident light and the vector connecting the incident point and the absorbing member 16.

第２実施形態の露光装置に使用されるフィルタ４０は、開口をアレイ状に配列した構造を有しているため、入射する赤外光の両偏光を同時に反射することができる。入射する赤外光の偏光状態がランダムであっても、使用するフィルタ４０は１つでよい。   Since the filter 40 used in the exposure apparatus of the second embodiment has a structure in which openings are arranged in an array, it can reflect both polarizations of incident infrared light simultaneously. Even if the polarization state of the incident infrared light is random, only one filter 40 may be used.

部材４１のサイズは開口５μｍ、板状部材の厚さ０．５μｍ、長さ５μｍ程度となる。そしてこれらの部材４１を含むフィルタ４０のサイズは、露光装置中の設置場所のビームサイズと同サイズ以上とするため、例えば２００ｍｍ×１００ｍｍ程度である。露光装置において、フィルタ４０は開口の軸４４と入射光とが略平行になるように設置される。第１実施形態と同様に、各開口の軸４４と入射光とが角度をなすことによるＥＵＶ光の光量損失が２０％以下であることが好ましい。すなわち、各開口の軸４４と入射光とがなす角度をθとすると、θが採りうる値は（３）式で表され、θはおよそ１０度以下である。各開口の軸４４と複数の部材４１の入射側の端面４１ｃにおける法線４２とがなす角度は２０°とすることが好ましい。   The size of the member 41 is about 5 μm in the opening, 0.5 μm in thickness of the plate-like member, and about 5 μm in length. The size of the filter 40 including these members 41 is, for example, about 200 mm × 100 mm so as to be equal to or larger than the beam size at the installation location in the exposure apparatus. In the exposure apparatus, the filter 40 is installed so that the axis 44 of the opening and the incident light are substantially parallel. As in the first embodiment, it is preferable that the light loss of EUV light due to the angle between the axis 44 of each opening and the incident light is 20% or less. That is, assuming that the angle formed between the axis 44 of each aperture and the incident light is θ, a value that θ can take is expressed by equation (3), and θ is about 10 degrees or less. The angle formed between the axis 44 of each opening and the normal line 42 on the end surface 41c on the incident side of the plurality of members 41 is preferably 20 °.

〔第３実施形態〕
図５に基づいて第３実施形態のフィルタ５０について説明する。図５は第３実施形態におけるフィルタ５０の正面図及び断面図である。フィルタ５０は、板状部材５１を階段状に並べて配置した構造を有している。各板状部材５１は棒状の支持部材５２で固定されている。板状部材５１の壁面５１ａと、板状部材５１の端面が形成する包絡面５１ｃにおける法線５３とが斜めに交わるような形状となっている。第３実施形態のフィルタ５０は板状部材の壁面５１ａが入射光と平行になるように設置される。 [Third Embodiment]
A filter 50 according to the third embodiment will be described with reference to FIG. FIG. 5 is a front view and a cross-sectional view of the filter 50 in the third embodiment. The filter 50 has a structure in which the plate-like members 51 are arranged stepwise. Each plate-like member 51 is fixed by a rod-like support member 52. The wall surface 51 a of the plate-like member 51 and the normal line 53 on the envelope surface 51 c formed by the end face of the plate-like member 51 are formed so as to intersect obliquely. The filter 50 of the third embodiment is installed such that the wall surface 51a of the plate-like member is parallel to the incident light.

板状部材５１の幅は５μｍ、厚さは０．５μｍ、板状部材５１が配置される間隔は５μｍ程度である。フィルタ５０のサイズは、露光装置中の設置場所のビームサイズと同サイズ以上とするため、例えば３０ｍｍ×３０ｍｍ程度である。第３実施形態の露光装置において、フィルタ５０は板状部材の壁面５１ａと入射光とが略平行になるように設置される。第１実施形態と同様に、各開口の軸５４と入射光とが角度をなすことによるＥＵＶ光の光量損失が２０％以下であることが好ましい。すなわち、各開口の軸５４と入射光とがなす角度をθとすると、θが採りうる値は（３）式で表され、θはおよそ１０度以下である。各開口の軸５４と複数の板状部材５１の入射側の端面の包絡面５１ｃにおける法線５３とがなす角度は２０°とすることが好ましい。   The width of the plate member 51 is 5 μm, the thickness is 0.5 μm, and the interval between the plate members 51 is about 5 μm. The size of the filter 50 is, for example, about 30 mm × 30 mm so as to be equal to or larger than the beam size at the installation location in the exposure apparatus. In the exposure apparatus of the third embodiment, the filter 50 is installed such that the wall surface 51a of the plate-like member and the incident light are substantially parallel. Similar to the first embodiment, it is preferable that the light loss of the EUV light due to the angle between the axis 54 of each opening and the incident light is 20% or less. That is, assuming that the angle formed between the axis 54 of each aperture and the incident light is θ, a value that θ can take is expressed by equation (3), and θ is about 10 degrees or less. It is preferable that the angle formed by the axis 54 of each opening and the normal 53 on the envelope surface 51c on the incident side end face of the plurality of plate-like members 51 is 20 °.

〔第４実施形態〕
図６に基づいて第４実施形態のフィルタ６０について説明する。第４実施形態におけるフィルタ６０は、複数の開口を持つ部材６１を、その第１端面６１ｃが平面をなし、かつ、光路に沿って収束するように配置した形状を有している。図６に示すように、フィルタ６０の各開口の軸６４と複数の部材６１の第１端面６１ｃにおける法線６２とはいずれも斜めに交わっている。第１端面６１ｃにおける隣接する板状部材の間隙は、第１端面６１ｃの反対側の第２端面における隣接する板状部材の間隙より大きい。 [Fourth Embodiment]
A filter 60 according to the fourth embodiment will be described with reference to FIG. The filter 60 in the fourth embodiment has a shape in which a member 61 having a plurality of openings is arranged so that the first end face 61c is a flat surface and converges along the optical path. As shown in FIG. 6, the shaft 64 of each opening of the filter 60 and the normal line 62 on the first end surface 61 c of the plurality of members 61 intersect each other at an angle. The gap between adjacent plate-like members on the first end face 61c is larger than the gap between adjacent plate-like members on the second end face opposite to the first end face 61c.

このフィルタ６０を図７に示すように入射光７１が平行化されていない照明系の光路中に挿入する。フィルタ６０への入射光７１の入射角度はフィルタ６０の面内位置により異なるが、局所的に見ると各開口の軸６４はその部材６１への入射光７１と平行である。よってＥＵＶ光は部材６１の壁面６１ａでけられることがないため、ＥＵＶ光の損失は最小となる。フィルタ６０によって反射された赤外光７２は光路外に設置された吸収部材７３に吸収されるため光学素子に悪影響を与えない。   As shown in FIG. 7, the filter 60 is inserted into the optical path of the illumination system in which the incident light 71 is not collimated. Although the incident angle of the incident light 71 on the filter 60 varies depending on the in-plane position of the filter 60, when viewed locally, the axis 64 of each opening is parallel to the incident light 71 on the member 61. Therefore, since EUV light is not scattered by the wall surface 61a of the member 61, the loss of EUV light is minimized. Since the infrared light 72 reflected by the filter 60 is absorbed by the absorbing member 73 installed outside the optical path, the optical element is not adversely affected.

第４実施形態では各開口の軸６４とその部材６１への入射光７１が平行であったが、必ずしも各開口の軸６４とその部材６１への入射光７１が全ての場所で平行である必要はない。図８のように一部だけが入射光７１と平行であってもよい。例えば開口の軸６４の角度を６４ａと６４ｂの二種類とすることで、各開口の軸６４と入射光７１が平行でない位置では部材６１の壁面６１ａでＥＵＶ光がけられてしまうためＥＵＶ光の透過率が低下するが、フィルタ６０の製作が容易となる。すなわち、少なくとも一組の隣接する板状部材において第１端面における間隙が第２端面における間隙より大きければよい。開口の軸６４と入射光７１とがなす角度の上限値は、第１実施形態の考え方と同様に、部材６１の射影面積から決定され、例えば１０度である。軸６４ａを有する部材と軸６４ｂを有する部材とを別々に製作し、ホルダ６３内で一体化させるといったことが可能となるため、フィルタ６０の製作が容易となる。   In the fourth embodiment, the axis 64 of each opening and the incident light 71 on the member 61 are parallel, but the axis 64 of each opening and the incident light 71 on the member 61 are not necessarily parallel in all places. There is no. As shown in FIG. 8, only a part may be parallel to the incident light 71. For example, by setting the angle of the axis 64 of the opening to two types, 64a and 64b, EUV light is scattered by the wall surface 61a of the member 61 at a position where the axis 64 of each opening and the incident light 71 are not parallel to each other. Although the rate decreases, the filter 60 can be easily manufactured. That is, it is sufficient that the gap at the first end face is larger than the gap at the second end face in at least one pair of adjacent plate-like members. The upper limit value of the angle formed by the axis 64 of the opening and the incident light 71 is determined from the projected area of the member 61 as in the first embodiment, and is, for example, 10 degrees. Since the member having the shaft 64a and the member having the shaft 64b can be manufactured separately and integrated in the holder 63, the filter 60 can be easily manufactured.

〔第５実施形態〕
第５実施形態のフィルタについて説明する。第５実施形態において図６で示される部材６１は複数の板状部材から構成されており、フィルタ６０は、板状部材６１を階段状に並べて配置した構造を有している。フィルタ６０の板状部材の壁面６１ａと、板状部材６１の端面の包絡面６１ｃにおける法線６２とはいずれも斜めに交わっており、壁面６１ａと法線６２とのなす角度は場所により異なっている。 [Fifth Embodiment]
A filter according to a fifth embodiment will be described. In the fifth embodiment, the member 61 shown in FIG. 6 is composed of a plurality of plate-like members, and the filter 60 has a structure in which the plate-like members 61 are arranged stepwise. The wall surface 61a of the plate-like member of the filter 60 and the normal line 62 on the envelope surface 61c of the end face of the plate-like member 61 both cross obliquely, and the angle formed between the wall surface 61a and the normal line 62 differs depending on the location. Yes.

〔第６実施形態〕
図９に基づいて第６実施形態のフィルタ９０について説明する。図９に示すように、フィルタ９０の板状部材９１の端面９１ｃは曲面であり、その曲率中心の第１方向における位置は、複数の開口の全てを含む１つの領域の第１方向における範囲の外側にある。すなわち、端面の法線９２とフィルタの内壁９１ａとはいずれの場所においても斜めに交わっている。このフィルタ９０を図１０に示すように入射光１０３が平行化されている照明系の光路中に挿入する。反射された赤外光１０１はフィルタ９０により集光され、吸収部材１０２で吸収される。反射された赤外光１０１は集光されているため、吸収部材１０２のサイズを小さくすることができる。吸収部材１０２のサイズを小さくすることにより照明系内の設置自由度が上がるため、照明系の設計が容易となる。なお、第６実施形態における複数の板状部材９１の替わりに複数の棒状部材を配置し、複数の開口が一方の端面にのみ存在するようにしてもよい。 [Sixth Embodiment]
Based on FIG. 9, the filter 90 of 6th Embodiment is demonstrated. As shown in FIG. 9, the end surface 91c of the plate-like member 91 of the filter 90 is a curved surface, and the position of the center of curvature in the first direction is a range in the first direction of one region including all of the plurality of openings. On the outside. That is, the normal line 92 of the end face and the inner wall 91a of the filter cross each other at an angle. As shown in FIG. 10, this filter 90 is inserted into the optical path of the illumination system in which the incident light 103 is collimated. The reflected infrared light 101 is collected by the filter 90 and absorbed by the absorbing member 102. Since the reflected infrared light 101 is collected, the size of the absorbing member 102 can be reduced. By reducing the size of the absorbing member 102, the degree of freedom of installation in the illumination system is increased, so that the design of the illumination system is facilitated. Note that a plurality of rod-shaped members may be arranged instead of the plurality of plate-shaped members 91 in the sixth embodiment, and a plurality of openings may exist only on one end surface.

〔第７実施形態〕
図１１に基づいて第７実施形態のフィルタ１１０について説明する。図１１に示すように、複数の開口が２次元に沿って配列された部材１１１の端面１１１ｃは曲率を持ち、端面１１１ｃにおける法線１１２とフィルタの内壁１１１ａとはいずれの場所においても斜めに交わっている。 [Seventh Embodiment]
A filter 110 according to the seventh embodiment will be described with reference to FIG. As shown in FIG. 11, the end surface 111c of the member 111 in which a plurality of openings are arranged in two dimensions has a curvature, and the normal line 112 on the end surface 111c and the inner wall 111a of the filter cross each other at an angle. ing.

〔第８実施形態〕
図１２に基づいて第８実施形態のフィルタ１２０について説明する。第６実施形態において複数の板状部材はホルダに固定されていたが、第８実施形態においては、複数の板状部材は棒状の支持部材で固定されている。図１２に示すように、フィルタ１２０の各板状部材の端面の包絡面１２１ｃは曲率を持ち、包絡面１２１ｃにおける法線とフィルタの内壁とはいずれの場所においても斜めに交わっている。 [Eighth Embodiment]
A filter 120 according to the eighth embodiment will be described with reference to FIG. In the sixth embodiment, the plurality of plate-like members are fixed to the holder, but in the eighth embodiment, the plurality of plate-like members are fixed by rod-like support members. As shown in FIG. 12, the envelope surface 121c of the end face of each plate-like member of the filter 120 has a curvature, and the normal line on the envelope surface 121c and the inner wall of the filter intersect each other at an angle.

〔デバイスの製造方法〕
本発明の一実施形態のデバイス（半導体デバイス、液晶表示デバイス等）の製造方法について説明する。半導体デバイスは、ウエハ（基板）に集積回路を作る前工程と、前工程で作られたウエハ上の集積回路チップを製品として完成させる後工程を経ることにより製造される。前工程は、前述の露光装置を使用して感光剤が塗布されたウエハを露光する工程と、前記工程で露光されたウエハを現像する工程を含む。後工程は、アッセンブリ工程（ダイシング、ボンディング）と、パッケージング工程（封入）を含む。液晶表示デバイスは、透明電極を形成する工程を経ることにより製造される。透明電極を形成する工程は、透明導電膜が蒸着されたガラス基板に感光剤を塗布する工程と、前述の露光装置を使用して感光剤が塗布されたガラス基板を露光する工程と、ガラス基板を現像する工程を含む。本実施形態のデバイス製造方法によれば、従来よりも高品位のデバイスを製造することができる。 [Device manufacturing method]
A method for manufacturing a device (semiconductor device, liquid crystal display device, etc.) according to an embodiment of the present invention will be described. A semiconductor device is manufactured through a pre-process for producing an integrated circuit on a wafer (substrate) and a post-process for completing an integrated circuit chip on the wafer produced in the pre-process as a product. The pre-process includes a process of exposing the wafer coated with the photosensitive agent using the above-described exposure apparatus, and a process of developing the wafer exposed in the process. The post-process includes an assembly process (dicing and bonding) and a packaging process (encapsulation). A liquid crystal display device is manufactured through a process of forming a transparent electrode. The step of forming the transparent electrode includes a step of applying a photosensitive agent to a glass substrate on which a transparent conductive film is deposited, a step of exposing the glass substrate on which the photosensitive agent is applied using the above-described exposure apparatus, and a glass substrate. The process of developing is included. According to the device manufacturing method of the present embodiment, it is possible to manufacture a higher quality device than before.

以上、本発明の好ましい実施形態について説明したが、本発明はこれらの実施形態に限定されず、その要旨の範囲内で種々の変形及び変更が可能である。   As mentioned above, although preferable embodiment of this invention was described, this invention is not limited to these embodiment, A various deformation | transformation and change are possible within the range of the summary.

Claims (7)

第１波長を有する第１の光と前記第１波長より短い第２波長を有する第２の光とを含む光を出射する光源からの前記第１の光を反射し前記第２の光を第２方向に透過させるフィルタを備え、Reflecting the first light from a light source that emits light including first light having a first wavelength and second light having a second wavelength shorter than the first wavelength, A filter that transmits in two directions,
前記フィルタは、前記第２方向と直交する第１方向に沿って並んだ複数の開口を形成する部材を含み、  The filter includes a member that forms a plurality of openings arranged along a first direction orthogonal to the second direction,
前記部材の壁面は前記第２方向に沿って延び、  The wall surface of the member extends along the second direction,
前記部材の光入射側の端面は、前記第１の光を前記第２方向と平行でない方向に反射するように、前記第２方向に垂直な面に対して傾けてあり、  An end surface on the light incident side of the member is inclined with respect to a plane perpendicular to the second direction so as to reflect the first light in a direction not parallel to the second direction,
前記フィルタを前記第２方向に透過した前記第２の光により基板を露光することを特徴とする露光装置。  An exposure apparatus that exposes a substrate with the second light transmitted through the filter in the second direction. 前記端面は平面であることを特徴とする請求項１に記載の露光装置。The exposure apparatus according to claim 1, wherein the end surface is a flat surface. 前記端面は曲面であることを特徴とする請求項１に記載の露光装置。The exposure apparatus according to claim 1, wherein the end surface is a curved surface. 前記光の光路外に配置され、前記端面で反射した前記第１の光を吸収する吸収部材を備えることを特徴とする請求項１乃至請求項３のいずれか１項に記載の露光装置。4. The exposure apparatus according to claim 1, further comprising an absorbing member that is disposed outside the optical path of the light and absorbs the first light reflected by the end surface. 5. 前記第１方向及び前記第２方向に直交する方向に沿って並んだ複数の開口を形成する第２部材を含む第２フィルタをさらに備え、
前記第２部材の壁面は前記第２方向に沿って延び、
前記第２部材の光入射側の端面は、前記第１の光を前記第２方向と平行でない方向に反射するように、前記第２方向に垂直な面に対して傾けてあり、
前記フィルタ及び前記第２フィルタを透過した前記第２の光により基板を露光することを特徴とする請求項１乃至請求項４のいずれか１項に記載の露光装置。 A second filter including a second member that forms a plurality of openings arranged along a direction orthogonal to the first direction and the second direction;
The wall surface of the second member extends along the second direction,
The end surface on the light incident side of the second member is inclined with respect to a plane perpendicular to the second direction so as to reflect the first light in a direction not parallel to the second direction,
The exposure apparatus according to claim 1, wherein the substrate is exposed by the second light transmitted through the filter and the second filter . 前記第２の光はＥＵＶ光であり、前記第１の光は赤外光であることを特徴とする請求項１に記載の露光装置。The exposure apparatus according to claim 1, wherein the second light is EUV light, and the first light is infrared light. 請求項１乃至６のいずれか１項に記載の露光装置を用いて基板を露光する工程と、A step of exposing the substrate using the exposure apparatus according to claim 1;
前記工程で露光された基板を現像する工程と、  Developing the substrate exposed in the step;
を含むデバイス製造方法。A device manufacturing method including:
JP2013007826A 2013-01-18 2013-01-18 Exposure apparatus and device manufacturing method Active JP5513636B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013007826A JP5513636B2 (en) 2013-01-18 2013-01-18 Exposure apparatus and device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013007826A JP5513636B2 (en) 2013-01-18 2013-01-18 Exposure apparatus and device manufacturing method

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2011000006A Division JP5419900B2 (en) 2011-01-01 2011-01-01 Filter, exposure apparatus and device manufacturing method

Publications (2)

Publication Number Publication Date
JP2013065917A true JP2013065917A (en) 2013-04-11
JP5513636B2 JP5513636B2 (en) 2014-06-04

Family

ID=48189059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013007826A Active JP5513636B2 (en) 2013-01-18 2013-01-18 Exposure apparatus and device manufacturing method

Country Status (1)

Country Link
JP (1) JP5513636B2 (en)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006107933A (en) * 2004-10-06 2006-04-20 Canon Inc Debris removing device, and x-ray generating device and exposing device provided with the same
JP2006191090A (en) * 2004-12-30 2006-07-20 Asml Netherlands Bv Spectral purity filter, lithography device equipped with such spectral purity filter, method for manufacturing device and device manufactured by such device manufacturing method
WO2009061192A1 (en) * 2007-11-08 2009-05-14 Asml Netherlands B.V. Radiation system and method, and a spectral purity filter
JP2009272622A (en) * 2008-05-02 2009-11-19 Asml Netherlands Bv Dichroic mirror, method of manufacturing the same, and lithography device, semiconductor device, and method of manufacturing the devices
JP2010021543A (en) * 2008-06-12 2010-01-28 Komatsu Ltd Extreme ultra violet light source apparatus
WO2010022840A1 (en) * 2008-08-29 2010-03-04 Asml Netherlands B.V. Spectral purity filter, lithographic apparatus including such a spectral purity filter and device manufacturing method
WO2010034385A1 (en) * 2008-09-26 2010-04-01 Asml Netherlands B.V. Spectral purity filter, lithographic apparatus, and method for manufacturing a spectral purity filter
JP2010087388A (en) * 2008-10-02 2010-04-15 Ushio Inc Aligner
JP2010123942A (en) * 2008-10-24 2010-06-03 Komatsu Ltd Extreme ultraviolet light source apparatus
JP2011044708A (en) * 2009-08-21 2011-03-03 Asml Netherlands Bv Spectral purity filter for use in lithographic device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006107933A (en) * 2004-10-06 2006-04-20 Canon Inc Debris removing device, and x-ray generating device and exposing device provided with the same
JP2006191090A (en) * 2004-12-30 2006-07-20 Asml Netherlands Bv Spectral purity filter, lithography device equipped with such spectral purity filter, method for manufacturing device and device manufactured by such device manufacturing method
WO2009061192A1 (en) * 2007-11-08 2009-05-14 Asml Netherlands B.V. Radiation system and method, and a spectral purity filter
JP2009272622A (en) * 2008-05-02 2009-11-19 Asml Netherlands Bv Dichroic mirror, method of manufacturing the same, and lithography device, semiconductor device, and method of manufacturing the devices
JP2010021543A (en) * 2008-06-12 2010-01-28 Komatsu Ltd Extreme ultra violet light source apparatus
WO2010022840A1 (en) * 2008-08-29 2010-03-04 Asml Netherlands B.V. Spectral purity filter, lithographic apparatus including such a spectral purity filter and device manufacturing method
WO2010034385A1 (en) * 2008-09-26 2010-04-01 Asml Netherlands B.V. Spectral purity filter, lithographic apparatus, and method for manufacturing a spectral purity filter
JP2010087388A (en) * 2008-10-02 2010-04-15 Ushio Inc Aligner
JP2010123942A (en) * 2008-10-24 2010-06-03 Komatsu Ltd Extreme ultraviolet light source apparatus
JP2011044708A (en) * 2009-08-21 2011-03-03 Asml Netherlands Bv Spectral purity filter for use in lithographic device

Also Published As

Publication number Publication date
JP5513636B2 (en) 2014-06-04

Similar Documents

Publication Publication Date Title
US9195144B2 (en) Spectral purity filter, radiation source, lithographic apparatus, and device manufacturing method
US9097982B2 (en) Radiation system, radiation collector, radiation beam conditioning system, spectral purity filter for radiation system and method for forming a spectral purity filter
JP6420864B2 (en) Spectral purity filters, radiation systems, and collectors
US9523921B2 (en) EUV radiation system and lithographic apparatus
JP5637702B2 (en) Exposure apparatus and device manufacturing method
KR101958857B1 (en) Radiation source
US9632419B2 (en) Radiation source
US20100259744A1 (en) Spectral filter, lithographic apparatus including such a spectral filter, device manufacturing method, and device manufactured thereby
JP5528449B2 (en) Spectral purity filter, lithographic apparatus equipped with this spectral purity filter, and device manufacturing method
JP4202996B2 (en) Lithographic apparatus and device manufacturing method
JP5419900B2 (en) Filter, exposure apparatus and device manufacturing method
JP5513636B2 (en) Exposure apparatus and device manufacturing method
JP2007088237A (en) Multilayer reflector and euv exposure apparatus
KR20160091979A (en) An apparatus, a device and a device manufacturing method

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130118

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130412

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130611

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130830

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131202

A911 Transfer of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20131210

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140127

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140204

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140228

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140327

R151 Written notification of patent or utility model registration

Ref document number: 5513636

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151