JP2013062405A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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Abstract
【解決手段】半導体モジュール3及びプリント配線板5をケース7が覆っている。半導体モジュール3においてベース配線板10上にスイッチング素子8が設けられ、スイッチング素子8のコレクタ電極11がベース配線板10に接続されている。スイッチング素子8はモールド樹脂21で覆われている。制御端子17の一端がスイッチング素子8のゲート電極18に接続され、他端がモールド樹脂21から導出されてプリント配線板5に接続されている。N側主電極15の一端がスイッチング素子8のエミッタ電極13に接続され、他端がモールド樹脂21から導出されている。P側主電極16の一端がベース配線板10に接続され、他端がモールド樹脂21から導出されている。N側主電極15及びP側主電極16はフレキシブルフラットケーブル又はフレキシブルプリント回路である。
【選択図】図2
Description
図1は、本発明の実施の形態1に係る半導体装置を示す断面図である。銅等からなるベース板1上に、接触面積を増して熱伝導率を向上するためのシリコングリス2を介して半導体モジュール3が設けられている。押さえ板4が半導体モジュール3を上側からベース板1に押さえつけて固定している。
図6は、本発明の実施の形態2に係る半導体モジュールを示す断面図である。銅等の金属板(リードフレーム)からなる中継端子28,29,30がモールド樹脂21内に設けられている。
5 プリント配線板(制御回路基板)
7 ケース
8 スイッチング素子(半導体素子)
9 還流ダイオード(半導体素子)
10 ベース配線板(導電板)
11 コレクタ電極(下面電極)
12 カソード電極(下面電極)
13 エミッタ電極(上面電極)
14 アノード電極(上面電極)
15 N側主電極(第1の主電極)
16 P側主電極(第2の主電極)
17 制御端子
18 ゲート電極(制御電極)
21 モールド樹脂(樹脂)
28 中継端子(第1の中継端子)
29 中継端子(第2の中継端子)
30 中継端子(第3の中継端子)
Claims (4)
- 半導体モジュールと、
制御回路基板と、
前記半導体モジュール及び前記制御回路基板を覆うケースとを備え、
前記半導体モジュールは、
導電板と、
制御電極、上面電極、及び下面電極を有し、前記導電板上に設けられ、前記導電板に前記下面電極が接続された半導体素子と、
前記半導体素子を覆う樹脂と、
一端が前記半導体素子の前記制御電極に接続され、他端が前記樹脂から導出されて前記制御回路基板に接続された制御端子と、
一端が前記半導体素子の前記上面電極に接続され、他端が前記樹脂から導出された第1の主電極と、
一端が前記導電板に接続され、他端が前記樹脂から導出された第2の主電極とを有し、
前記第1及び第2の主電極はフレキシブルフラットケーブル又はフレキシブルプリント回路であることを特徴とする半導体装置。 - 前記第1及び第2の主電極は前記ケースの外側に導出されていることを特徴とする請求項1に記載の半導体装置。
- 前記半導体モジュールは、
前記樹脂内に設けられ、一端が前記半導体素子の前記上面電極にワイヤ接続され、他端が前記第1の主電極の一端に接続された第1の中継端子と、
前記樹脂内に設けられ、一端が前記導電板にワイヤ接続され、他端が前記第2の主電極の一端に接続された第2の中継端子とを更に有することを特徴とする請求項1又は2に記載の半導体装置。 - 前記制御端子はフレキシブルフラットケーブル又はフレキシブルプリント回路であり、
前記半導体モジュールは、前記樹脂内に設けられ、一端が前記半導体素子の前記制御電極にワイヤ接続され、他端が前記制御端子の一端に接続された第3の中継端子を更に有することを特徴とする請求項1〜3の何れか1項に記載の半導体装置。
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JP2011200486A JP5842489B2 (ja) | 2011-09-14 | 2011-09-14 | 半導体装置 |
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JP5842489B2 JP5842489B2 (ja) | 2016-01-13 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016005384A (ja) * | 2014-06-18 | 2016-01-12 | 三菱電機株式会社 | 電力変換装置 |
DE102015212832A1 (de) | 2014-10-02 | 2016-04-21 | Mitsubishi Electric Corporation | Halbleitervorrichtung und Verfahren zu deren Herstellung |
CN108735614A (zh) * | 2017-04-17 | 2018-11-02 | 三菱电机株式会社 | 半导体装置及半导体装置的制造方法 |
WO2019150861A1 (ja) * | 2018-01-30 | 2019-08-08 | パナソニックIpマネジメント株式会社 | 電力変換装置 |
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016005384A (ja) * | 2014-06-18 | 2016-01-12 | 三菱電機株式会社 | 電力変換装置 |
DE102015212832A1 (de) | 2014-10-02 | 2016-04-21 | Mitsubishi Electric Corporation | Halbleitervorrichtung und Verfahren zu deren Herstellung |
US9691730B2 (en) | 2014-10-02 | 2017-06-27 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing the same |
DE102015212832B4 (de) | 2014-10-02 | 2021-09-02 | Mitsubishi Electric Corporation | Halbleitervorrichtung und Verfahren zu deren Herstellung |
CN108735614A (zh) * | 2017-04-17 | 2018-11-02 | 三菱电机株式会社 | 半导体装置及半导体装置的制造方法 |
JP2018182131A (ja) * | 2017-04-17 | 2018-11-15 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
US10790242B2 (en) | 2017-04-17 | 2020-09-29 | Mitsubishi Electric Corporation | Method of manufacturing a semiconductor device |
CN108735614B (zh) * | 2017-04-17 | 2022-02-25 | 三菱电机株式会社 | 半导体装置及半导体装置的制造方法 |
DE102018200161B4 (de) | 2017-04-17 | 2022-07-07 | Mitsubishi Electric Corporation | Halbleiteranordnung und verfahren zum herstellen der halbleiteranordnung |
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