JP2013055160A - 光透過性部材、光学装置およびそれらの製造方法 - Google Patents
光透過性部材、光学装置およびそれらの製造方法 Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title claims description 66
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims description 30
- 239000011347 resin Substances 0.000 claims description 18
- 229920005989 resin Polymers 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 description 8
- 238000007789 sealing Methods 0.000 description 7
- 238000003384 imaging method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000001568 sexual effect Effects 0.000 description 3
- 239000008188 pellet Substances 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L27/144—Devices controlled by radiation
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
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- Solid State Image Pick-Up Elements (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
【解決手段】第1主面、第2主面および側面を有する光透過性部材は、前記第1主面、前記第2主面および前記側面には現れないように前記第1主面と前記第2主面との間に形成された複数の変質部を有する。
【選択図】図1
Description
Claims (12)
- 第1主面、第2主面および側面を有する光透過性部材であって、
前記第1主面、前記第2主面および前記側面には現れないように前記第1主面と前記第2主面との間に形成された複数の変質部を有する、
ことを特徴とする光透過性部材。 - 前記複数の変質部が配列された領域の前記第1主面に直交する方向における幅は、前記第1主面と前記第2主面との距離の30%以上かつ70%以下である、
ことを特徴とする請求項1に記載の光透過性部材。 - 前記変質部は、空隙を含む、
ことを特徴とする請求項1又は2に記載の光透過性部材。 - 前記変質部は、レーザー光の照射によって形成された部分を含む、
ことを特徴とする請求項1又は2に記載の光透過性部材。 - 前記複数の変質部のうち隣接する変質部の間の最小距離が10μm以上かつ100μm以下である、
ことを特徴とする請求項1乃至4のいずれか1項に記載の光透過性部材。 - 光学素子と、
請求項1乃至5のいずれか1項に記載の光透過性部材と、を備え、
前記光透過性部材は、前記第2主面が前記光学素子に向くように配置されている、
ことを特徴とする光学装置。 - 前記光学素子と前記光透過性部材との間に配置された樹脂部材を更に備える、
ことを特徴とする請求項6に記載の光学装置。 - 前記光学素子は、画素アレイ領域とそれを取り囲む外側領域とを含み、
前記光学装置は、前記画素アレイ領域と前記光透過性部材との間に空間が形成されるように前記外側領域と前記光透過性部材とを結合する樹脂部材を更に備える、
ことを特徴とする請求項6に記載の光学装置。 - 前記複数の変質部の少なくとも一部は、前記第2主面と交差する仮想面に配列され、
前記樹脂部材は、前記第2主面と前記仮想面との交線を覆う部分を含む、
ことを特徴とする請求項7又は8に記載の光学装置。 - 前記複数の変質部の少なくとも一部は、前記第1主面と交差する仮想面に配列され、
前記光学装置は、前記第1主面と前記仮想面との交線を覆う部分を含む樹脂部材を更に備える、
ことを特徴とする請求項7又は8に記載の光学装置。 - 光透過性部材を製造する製造方法であって、
光透過性基板の内部に複数の変質部を形成する工程と、
前記複数の変質部が前記光透過性部材の側面となるべき部分に現れないように前記光透過性基板をダイシングして前記光透過性部材を得る工程と、
を含むことを特徴とする光透過性部材の製造方法。 - 光学素子と、1つの面が前記光学素子に向くように配置された光透過性部材とを有する光学装置の製造方法であって、
前記光学素子が形成された半導体基板と光透過性基板とを結合してなる基板の内部に複数の変質部を形成する工程と、
前記複数の変質部が前記光透過性部材の側面となるべき部分に現れないように前記半導体基板および前記光透過性基板をダイシングして前記光学装置を得る工程と、
を含むことを特徴とする光学装置の製造方法。
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JP2011191076A JP2013055160A (ja) | 2011-09-01 | 2011-09-01 | 光透過性部材、光学装置およびそれらの製造方法 |
US13/592,759 US8963269B2 (en) | 2011-09-01 | 2012-08-23 | Light-transmissive member, optical device, and manufacturing methods thereof |
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JP2011191076A JP2013055160A (ja) | 2011-09-01 | 2011-09-01 | 光透過性部材、光学装置およびそれらの製造方法 |
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JP2013055160A true JP2013055160A (ja) | 2013-03-21 |
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JP2016076671A (ja) * | 2014-10-09 | 2016-05-12 | 株式会社ディスコ | ウエーハの加工方法 |
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- 2011-09-01 JP JP2011191076A patent/JP2013055160A/ja active Pending
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JP2010064943A (ja) * | 2008-09-12 | 2010-03-25 | Olympus Corp | ガラス基板製造方法、及び、ガラス基板強化装置 |
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JP2016076671A (ja) * | 2014-10-09 | 2016-05-12 | 株式会社ディスコ | ウエーハの加工方法 |
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