JP2013043822A - 半導体ウエハの製造方法及び半導体ウエハ - Google Patents
半導体ウエハの製造方法及び半導体ウエハ Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 88
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 52
- 239000013078 crystal Substances 0.000 claims abstract description 116
- 239000000758 substrate Substances 0.000 claims abstract description 103
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 80
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 79
- 238000010438 heat treatment Methods 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims abstract description 59
- 239000007791 liquid phase Substances 0.000 claims abstract description 14
- 238000005229 chemical vapour deposition Methods 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000000859 sublimation Methods 0.000 claims description 2
- 230000008022 sublimation Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 190
- 229910010271 silicon carbide Inorganic materials 0.000 description 123
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 52
- 229910052751 metal Inorganic materials 0.000 description 34
- 239000002184 metal Substances 0.000 description 34
- 239000000463 material Substances 0.000 description 10
- 229910003468 tantalcarbide Inorganic materials 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 230000009036 growth inhibition Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 2
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910039444 MoC Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910026551 ZrC Inorganic materials 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007666 vacuum forming Methods 0.000 description 1
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- H01L21/02664—Aftertreatments
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- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- H01L21/02367—Substrates
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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Abstract
【解決手段】半導体ウエハの製造方法は、カーボン層形成工程と、貫通孔形成工程と、フィード層形成工程と、エピタキシャル層形成工程と、を含む。カーボン層形成工程では、多結晶SiCで構成される基板70の表面にカーボン層71を形成する。貫通孔形成工程では、基板70に形成されたカーボン層71に貫通孔を形成する。フィード層形成工程では、カーボン層71の表面にSi層72a及び3C−SiC多結晶層73を形成する。エピタキシャル層形成工程では、基板70を加熱することで、貫通孔を通じて露出した基板70の表面に4H−SiC単結晶で構成される種結晶74を形成し、前記種結晶74を近接液相エピタキシャル成長させて4H−SiC単結晶層74aを形成する。
【選択図】図6
Description
71,81 カーボン層
71a 溝部
71c,81c 貫通孔
81a 壁部
72 Si層
72a Si融液層
73 3C−SiC多結晶層
74 種結晶
74a 4H−SiC単結晶層
Claims (7)
- 少なくとも表面が多結晶SiCで構成される基板の表面にカーボン層を形成するカーボン層形成工程と、前記基板に形成された前記カーボン層に貫通孔を形成する貫通孔形成工程と、前記基板に形成された前記カーボン層の表面にSi層を形成するとともに、当該Si層の表面に多結晶SiCで構成されるフィード層を形成するフィード層形成工程と、前記基板に対して1600℃以上2300℃以下の温度範囲の加熱処理を行うことで、前記貫通孔を通じて露出した前記基板の表面に4H−SiC単結晶で構成される種結晶を形成し、前記加熱処理を継続することで、前記種結晶を近接液相エピタキシャル成長させて4H−SiC単結晶で構成されるエピタキシャル層を形成するエピタキシャル層形成工程と、を含むことを特徴とする半導体ウエハの製造方法。
- 請求項1に記載の半導体ウエハの製造方法であって、前記基板の表面には、複数の溝部又は壁部が形成されており、前記貫通孔形成工程では、前記溝部又は前記壁部で囲まれた領域毎に前記貫通孔を形成し、前記エピタキシャル層形成工程では、4H−SiC単結晶で構成される前記エピタキシャル層が前記領域毎に形成されることを特徴とする半導体ウエハの製造方法。
- 請求項1又は2に記載の半導体ウエハの製造方法であって、前記カーボン層形成工程では、1500℃以上2300℃以下の温度範囲の真空下で加熱することで、前記基板の表面のSi原子を昇華させて前記カーボン層を形成することを特徴とする半導体ウエハの製造方法。
- 請求項1又は2に記載の半導体ウエハの製造方法であって、前記カーボン層形成工程では、化学気相成長法、有機レジスト法、又は電子サイクロトロン共鳴スパッタ法によって前記カーボン層を形成することを特徴とする半導体ウエハの製造方法。
- 請求項1から4までの何れか一項に記載の半導体ウエハの製造方法であって、前記貫通孔形成工程では赤外線のレーザ光を用いてカーボン層に貫通孔を形成し、赤外線のレーザ光のスポット径が100μm以下であることを特徴とする半導体ウエハの製造方法。
- 請求項1から5までの何れか一項に記載の半導体ウエハの製造方法であって、前記貫通孔を通じて露出した前記基板の表面に4H−SiC単結晶で構成される種結晶を形成し、前記加熱処理を継続することで、前記種結晶を近接液相エピタキシャル成長させて4H−SiC単結晶で構成されるエピタキシャル層を形成するエピタキシャル層形成工程においては、4H−SiC単結晶で構成されるエピタキシャル層の水平方向のエピタキシャル成長速度が厚み方向のエピタキシャル成長速度より5倍から10倍早く成長できることを特徴とする半導体ウエハの製造方法。
- 請求項1から6までの何れか一項に記載の半導体ウエハの製造方法により製造された半導体ウエハであり、
前記種結晶を近接液相エピタキシャル成長させる加熱処理温度を制御することにより4H−SiC単結晶で構成されるエピタキシャル層の水平方向の寸度が、厚み方向の寸度に対して5倍から10倍のアスペクト比率に制御された半導体ウエハ。
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JP2011185181A JP5875143B2 (ja) | 2011-08-26 | 2011-08-26 | 半導体ウエハの製造方法 |
TW101130853A TWI567867B (zh) | 2011-08-26 | 2012-08-24 | Semiconductor wafer manufacturing method and semiconductor wafer |
PCT/JP2012/005301 WO2013031154A1 (ja) | 2011-08-26 | 2012-08-24 | 半導体ウエハの製造方法及び半導体ウエハ |
US14/240,710 US9029219B2 (en) | 2011-08-26 | 2012-08-24 | Semiconductor wafer manufacturing method, and semiconductor wafer |
KR1020147008007A KR101910696B1 (ko) | 2011-08-26 | 2012-08-24 | 반도체 웨이퍼의 제조 방법 및 반도체 웨이퍼 |
EP12828285.2A EP2749675A4 (en) | 2011-08-26 | 2012-08-24 | METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER, AND SEMICONDUCTOR WAFER |
CN201280041389.3A CN103857835B (zh) | 2011-08-26 | 2012-08-24 | 半导体晶片的制造方法和半导体晶片 |
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Cited By (2)
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JP2015086122A (ja) * | 2013-11-01 | 2015-05-07 | 株式会社豊田自動織機 | 化合物半導体結晶の製造方法 |
WO2017081862A1 (ja) * | 2015-11-10 | 2017-05-18 | 学校法人関西学院 | 半導体ウエハの製造方法 |
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JP6247566B2 (ja) * | 2014-02-28 | 2017-12-13 | 東洋炭素株式会社 | 加熱処理容器、加熱処理容器集合体、及び、半導体素子製造装置 |
JP6232329B2 (ja) * | 2014-03-31 | 2017-11-15 | 東洋炭素株式会社 | SiC種結晶の加工変質層の除去方法、SiC種結晶及びSiC基板の製造方法 |
US20220189797A1 (en) * | 2019-03-29 | 2022-06-16 | Kwansei Gakuin Educational Foundation | Device for manufacturing semiconductor substrate comprising temperature gradient inversion means and method for manufacturing semiconductor substrate |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007001800A (ja) * | 2005-06-23 | 2007-01-11 | Sumitomo Electric Ind Ltd | 炭化ケイ素基板の表面再構成方法 |
WO2009119515A1 (ja) * | 2008-03-26 | 2009-10-01 | リンテック株式会社 | 粘着シート |
JP2010265126A (ja) * | 2009-05-12 | 2010-11-25 | Kwansei Gakuin | 単結晶SiC基板、エピタキシャル成長層付き単結晶SiC基板、SiC基板、炭素供給フィード基板及び炭素ナノ材料付きSiC基板 |
JP2011119412A (ja) * | 2009-12-02 | 2011-06-16 | Kwansei Gakuin | 半導体ウエハの製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5679153A (en) | 1994-11-30 | 1997-10-21 | Cree Research, Inc. | Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures |
US7125785B2 (en) * | 2004-06-14 | 2006-10-24 | International Business Machines Corporation | Mixed orientation and mixed material semiconductor-on-insulator wafer |
US20070224784A1 (en) * | 2006-03-22 | 2007-09-27 | Soloviev Stanislav I | Semiconductor material having an epitaxial layer formed thereon and methods of making same |
US20070228505A1 (en) * | 2006-04-04 | 2007-10-04 | Mazzola Michael S | Junction barrier schottky rectifiers having epitaxially grown p+-n junctions and methods of making |
US7977154B2 (en) * | 2006-04-14 | 2011-07-12 | Mississippi State University | Self-aligned methods based on low-temperature selective epitaxial growth for fabricating silicon carbide devices |
JP4954593B2 (ja) | 2006-04-18 | 2012-06-20 | 新日本製鐵株式会社 | エピタキシャル炭化珪素単結晶基板の製造方法、及び得られたエピタキシャル炭化珪素単結晶基板を用いてなるデバイス |
JP4345774B2 (ja) * | 2006-04-26 | 2009-10-14 | ソニー株式会社 | 半導体装置の製造方法 |
US7598142B2 (en) * | 2007-03-15 | 2009-10-06 | Pushkar Ranade | CMOS device with dual-epi channels and self-aligned contacts |
JP5213096B2 (ja) * | 2007-03-23 | 2013-06-19 | 学校法人関西学院 | 単結晶炭化ケイ素の液相エピタキシャル成長方法、単結晶炭化ケイ素基板の製造方法、及び単結晶炭化ケイ素基板 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007001800A (ja) * | 2005-06-23 | 2007-01-11 | Sumitomo Electric Ind Ltd | 炭化ケイ素基板の表面再構成方法 |
WO2009119515A1 (ja) * | 2008-03-26 | 2009-10-01 | リンテック株式会社 | 粘着シート |
JP2010265126A (ja) * | 2009-05-12 | 2010-11-25 | Kwansei Gakuin | 単結晶SiC基板、エピタキシャル成長層付き単結晶SiC基板、SiC基板、炭素供給フィード基板及び炭素ナノ材料付きSiC基板 |
JP2011119412A (ja) * | 2009-12-02 | 2011-06-16 | Kwansei Gakuin | 半導体ウエハの製造方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015086122A (ja) * | 2013-11-01 | 2015-05-07 | 株式会社豊田自動織機 | 化合物半導体結晶の製造方法 |
WO2017081862A1 (ja) * | 2015-11-10 | 2017-05-18 | 学校法人関西学院 | 半導体ウエハの製造方法 |
CN108474138A (zh) * | 2015-11-10 | 2018-08-31 | 学校法人关西学院 | 半导体晶圆的制造方法 |
EP3375914A4 (en) * | 2015-11-10 | 2019-05-22 | Kwansei Gakuin Educational Foundation | METHOD FOR PRODUCING A SEMICONDUCTOR WAFERS |
US10508361B2 (en) | 2015-11-10 | 2019-12-17 | Kwansei Gakuin Educational Foundation | Method for manufacturing semiconductor wafer |
Also Published As
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KR101910696B1 (ko) | 2018-10-22 |
CN103857835A (zh) | 2014-06-11 |
TWI567867B (zh) | 2017-01-21 |
CN103857835B (zh) | 2017-02-15 |
EP2749675A4 (en) | 2015-06-03 |
WO2013031154A1 (ja) | 2013-03-07 |
US9029219B2 (en) | 2015-05-12 |
JP5875143B2 (ja) | 2016-03-02 |
US20140319539A1 (en) | 2014-10-30 |
EP2749675A1 (en) | 2014-07-02 |
KR20140069039A (ko) | 2014-06-09 |
TW201314839A (zh) | 2013-04-01 |
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