JP2013016576A - Semiconductor package - Google Patents

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JP2013016576A
JP2013016576A JP2011147203A JP2011147203A JP2013016576A JP 2013016576 A JP2013016576 A JP 2013016576A JP 2011147203 A JP2011147203 A JP 2011147203A JP 2011147203 A JP2011147203 A JP 2011147203A JP 2013016576 A JP2013016576 A JP 2013016576A
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mounting member
high thermal
insulating material
led element
thermal conductivity
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Masatoshi Fujita
政利 藤田
Kimihiko Yasuda
公彦 安田
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Fuji Corp
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Fuji Machine Manufacturing Co Ltd
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Priority to JP2011147203A priority Critical patent/JP2013016576A/en
Priority to CN2012203170180U priority patent/CN202772121U/en
Publication of JP2013016576A publication Critical patent/JP2013016576A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/24226—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/24227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect not connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the semiconductor or solid-state body being mounted in a cavity or on a protrusion of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/76—Apparatus for connecting with build-up interconnects
    • H01L2224/7615—Means for depositing
    • H01L2224/76151—Means for direct writing
    • H01L2224/76155—Jetting means, e.g. ink jet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H01L2224/821—Forming a build-up interconnect
    • H01L2224/82101—Forming a build-up interconnect by additive methods, e.g. direct writing
    • H01L2224/82102—Forming a build-up interconnect by additive methods, e.g. direct writing using jetting, e.g. ink jet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To achieve both of improvement in heat dissipation performance and reduction in size and cost of an LED package.SOLUTION: A semiconductor device comprises a high thermal conductive insulation material 14 provided so as to surround a whole circumference of an LED element 12 mounted on a mounting member 11 by an inkjet method, a dispenser method and the like. The high thermal conductive insulation material 14 is formed from an insulation material having thermal conductivity higher than that of an encapsulation material 18. The high thermal conductive insulation material 14 is attached firmly to a lateral face of the whole circumference of the LED element 12 and the mounting member 11 to function as a component of a heat dissipation path through which heat can be effectively transferred from the lateral face of the whole circumference of the LED element 12 to the mounting member 11, and formed in a slope shape slanting from a top edge of the lateral face of the LED element 12 toward a top face of the mounting member 11. The semiconductor device further comprises wiring 17 formed on a top face of the high thermal conductive insulation material 14 by a droplet discharge method such as an inkjet method and a dispenser method, by which an electrode part 13 of the LED element 12 and an electrode part 16 of the mounting member 11 are connected.

Description

本発明は、搭載部材にＬＥＤ素子等の半導体素子を搭載してその上側から封止材料で封止した半導体パッケージに関する発明である。   The present invention relates to a semiconductor package in which a semiconductor element such as an LED element is mounted on a mounting member and sealed from above with a sealing material.

例えば、ＬＥＤパッケージでは、リードフレーム（搭載部材）にＬＥＤ素子をダイボンディングして、該ＬＥＤ素子上面の電極部とリードフレーム側の電極部とをワイヤボンディングで配線した後、これら全体を透明な封止樹脂で封止した構成となっている。ＬＥＤ素子の発光中（通電中）は、ＬＥＤ素子が発熱して封止樹脂の温度が上昇するため、封止樹脂が経時的に黄変したり、ＬＥＤ素子の特性が劣化する等の問題が発生することがある。   For example, in an LED package, an LED element is die-bonded to a lead frame (mounting member), an electrode part on the upper surface of the LED element and an electrode part on the lead frame side are wired by wire bonding, and then the whole is transparently sealed. The structure is sealed with a stop resin. During the light emission of the LED element (during energization), the LED element generates heat and the temperature of the sealing resin rises, so that there are problems such as yellowing of the sealing resin over time and deterioration of the characteristics of the LED element. May occur.

この対策として、特許文献１（特開２０１０−１０３５２５号公報）に記載のＬＥＤパッケージは、パッケージ本体の下面に炭素ナノチューブからなる放熱フィンを形成して、パッケージ本体の下面側の放熱を促進させるようにしている。   As a countermeasure, in the LED package described in Patent Document 1 (Japanese Patent Laid-Open No. 2010-103525), heat radiation fins made of carbon nanotubes are formed on the lower surface of the package body so as to promote heat radiation on the lower surface side of the package body. I have to.

また、特許文献２（特開２００７−２６６２４６号公報）に記載のＬＥＤパッケージは、素子搭載凹部内にＬＥＤ素子を搭載した基台と封止部材との接触面の外形を素子搭載凹部の底面（素子搭載面）の外形よりも大きくすることで放熱性を向上させるようにしている。   Moreover, the LED package described in Patent Document 2 (Japanese Patent Application Laid-Open No. 2007-266246) has an outer shape of a contact surface between a base on which an LED element is mounted in an element mounting recess and a sealing member, and a bottom surface of the element mounting recess ( Heat dissipation is improved by making it larger than the outer shape of the element mounting surface.

特開２０１０−１０３５２５号公報JP 2010-103525 A 特開２００７−２６６２４６号公報JP 2007-266246 A

ところで、ＬＥＤ素子をダイボンディングしたリードフレーム（搭載部材）は、導電性金属で形成されているため、封止樹脂やパッケージのモールド樹脂と比較して、熱伝導率が遥かに高いため、リードフレーム（搭載部材）の高熱伝導性を有効に活用して放熱性能を高めることが望ましい。しかし、上記特許文献１，２の放熱構造は、リードフレーム（搭載部材）の高熱伝導性を有効に活用していないため、結果的に、ＬＥＤパッケージが大型化したり、製造コストが高くなる欠点がある。   By the way, the lead frame (mounting member) in which the LED element is die-bonded is formed of a conductive metal, and therefore has a much higher thermal conductivity than the sealing resin or the package molding resin. It is desirable to improve the heat dissipation performance by effectively utilizing the high thermal conductivity of the (mounting member). However, the heat dissipating structures of Patent Documents 1 and 2 do not effectively utilize the high thermal conductivity of the lead frame (mounting member). As a result, there is a drawback that the LED package becomes large or the manufacturing cost increases. is there.

そこで、本発明が解決しようとする課題は、放熱性能の向上を小型化や低コスト化と両立させながら実現する半導体パッケージを提供することである。   Therefore, the problem to be solved by the present invention is to provide a semiconductor package that realizes improvement in heat dissipation performance while reducing both size and cost.

上記課題を解決するために、請求項１に係る発明は、搭載部材に半導体素子を搭載してその上側から封止材料で封止した半導体パッケージにおいて、前記封止材料よりも熱伝導率が高い高熱伝導性絶縁材料を前記半導体素子の側面と前記搭載部材とに密着させるように設けることで、前記半導体素子の側面から熱を前記搭載部材へ伝達する放熱経路を構成したものである。この構成では、半導体素子の側面と封止材料との間に高熱伝導性絶縁材料が介在されているため、半導体素子の側面から封止材料への直接的な熱伝達は高熱伝導性絶縁材料で妨げられるが、高熱伝導性絶縁材料は封止材料よりも熱伝導率が高いため、半導体素子の側面から熱を高熱伝導性絶縁材料を介して搭載部材へ効率良く伝達して放熱させることが可能となり、高熱伝導性絶縁材料と搭載部材の高熱伝導性を有効に活用して放熱性能を高めることができる。   In order to solve the above-mentioned problem, the invention according to claim 1 is a semiconductor package in which a semiconductor element is mounted on a mounting member and sealed from above with a sealing material, and has a higher thermal conductivity than the sealing material. By providing a highly thermally conductive insulating material in close contact with the side surface of the semiconductor element and the mounting member, a heat radiation path for transferring heat from the side surface of the semiconductor element to the mounting member is configured. In this configuration, since the high thermal conductive insulating material is interposed between the side surface of the semiconductor element and the sealing material, direct heat transfer from the side surface of the semiconductor element to the sealing material is performed by the high thermal conductive insulating material. Although disturbed, the high thermal conductivity insulating material has higher thermal conductivity than the sealing material, so heat can be efficiently transferred from the side surface of the semiconductor element to the mounting member via the high thermal conductivity insulating material for heat dissipation Thus, the heat dissipation performance can be enhanced by effectively utilizing the high thermal conductivity of the high thermal conductivity insulating material and the mounting member.

例えば、半導体素子を封止する封止材料全体を高熱伝導性絶縁材料で形成することが考えられるが、高熱伝導性絶縁材料は、一般的な封止樹脂と比較してコストが高いため、封止材料全体を高熱伝導性絶縁材料で形成すると、製造コストが高くなる。   For example, it is conceivable that the entire sealing material for sealing the semiconductor element is formed of a high thermal conductive insulating material. However, since the high thermal conductive insulating material is more expensive than a general sealing resin, the sealing material is sealed. If the entire stopper material is formed of a highly thermally conductive insulating material, the manufacturing cost increases.

これに対し、本発明では、半導体素子の側面と封止材料との間の放熱経路を構成するのに必要な部分のみを高熱伝導性絶縁材料で形成するだけであるため、コストアップ幅を少なくできると共に、高熱伝導性絶縁材料と搭載部材の高熱伝導性を有効に活用して放熱性能を高めることができるため、半導体パッケージ全体の小型化も可能となる。これにより、半導体パッケージの放熱性能の向上を小型化や低コスト化と両立させながら実現することができる。 本発明は、半導体素子の側面の一部に高熱伝導性絶縁材料が設けられていない箇所が存在しても良いが、請求項２のように、高熱伝導性絶縁材料を半導体素子の全周を取り囲むように設けることが望ましい。このようにすれば、半導体素子全周の側面から熱が効率良く搭載部材に伝達されて放熱されるようになり、熱伝達性能を向上させることができる。 また、半導体素子を搭載する搭載部材は、どのような形状であっても良く、例えば、請求項３のように、搭載部材に形成した素子搭載凹部内に半導体素子を搭載し、該素子搭載凹部内のうちの該半導体素子の周囲に高熱伝導性絶縁材料を充填するようにしても良い。このようにすれば、半導体素子の周囲に高熱伝導性絶縁材料を容易に設けることができ、該高熱伝導性絶縁材料を半導体素子全周の側面と搭載部材とに確実に密着させることができる。   On the other hand, in the present invention, since only the portion necessary for configuring the heat radiation path between the side surface of the semiconductor element and the sealing material is formed of the high thermal conductive insulating material, the cost increase range is reduced. In addition, since the heat dissipation performance can be enhanced by effectively utilizing the high thermal conductivity of the high thermal conductivity insulating material and the mounting member, the entire semiconductor package can be downsized. As a result, the improvement of the heat dissipation performance of the semiconductor package can be realized while achieving both downsizing and cost reduction. In the present invention, there may be a portion where the highly thermally conductive insulating material is not provided on a part of the side surface of the semiconductor element. However, as in claim 2, the highly thermally conductive insulating material is spread over the entire circumference of the semiconductor element. It is desirable to provide it so as to surround it. If it does in this way, heat will be efficiently transmitted to the mounting member from the side surface of the entire circumference of the semiconductor element to be dissipated, and the heat transfer performance can be improved. Further, the mounting member for mounting the semiconductor element may have any shape. For example, as in claim 3, the semiconductor element is mounted in the element mounting recess formed in the mounting member, and the element mounting recess A high thermal conductivity insulating material may be filled around the semiconductor element. In this way, the high thermal conductivity insulating material can be easily provided around the semiconductor element, and the high thermal conductive insulating material can be reliably adhered to the side surface of the entire circumference of the semiconductor element and the mounting member.

上述した請求項１〜３において、高熱伝導性絶縁材料は、放熱経路を形成するためだけに用いても良いし、或は、請求項４のように、高熱伝導性絶縁材料の上面に、半導体素子の上面の電極部と前記搭載部材の電極部とを接続する配線を形成するようにしても良い。このようにすれば、放熱経路の構成材として用いる高熱伝導性絶縁材料を配線の下地材としても機能させることができる。   In the first to third aspects described above, the high thermal conductive insulating material may be used only for forming a heat dissipation path, or, as in the fourth aspect, a semiconductor is formed on the upper surface of the high thermal conductive insulating material. You may make it form the wiring which connects the electrode part of the upper surface of an element, and the electrode part of the said mounting member. In this way, the high thermal conductive insulating material used as the constituent material of the heat dissipation path can function as the wiring base material.

高熱伝導性絶縁材料の上面に配線を形成する場合は、請求項５のように、液滴吐出法又は印刷法により配線を形成するようにすると良い。例えば、搭載部材の素子搭載凹部内に半導体素子を搭載する場合は、搭載部材の素子搭載凹部内のうちの半導体素子の周囲のスペースに高熱伝導性絶縁材料を充填することで、半導体素子の上面の電極部と搭載部材の電極部との間の配線経路を高熱伝導性絶縁材料で平坦化することができ、高熱伝導性絶縁材料の上面にインクジェット等の液滴吐出法又はスクリーン印刷等の印刷法により配線を容易に形成することができる。また、半導体素子の上面の電極部と搭載部材の電極部との間に高低差がある場合には、高熱伝導性絶縁材料を半導体素子の上面の電極部側から搭載部材の電極部側に向けて傾斜するスロープ状に形成することで、該高熱伝導性絶縁材料の上面にインクジェット等の液滴吐出法により配線を容易に形成することができる。   When the wiring is formed on the upper surface of the high thermal conductive insulating material, it is preferable that the wiring is formed by a droplet discharge method or a printing method as in claim 5. For example, when a semiconductor element is mounted in the element mounting recess of the mounting member, the upper surface of the semiconductor element is filled by filling a space around the semiconductor element in the element mounting recess of the mounting member with a high thermal conductive insulating material. The wiring path between the electrode part of the mounting member and the electrode part of the mounting member can be flattened with a high thermal conductive insulating material, and a droplet discharge method such as inkjet or printing such as screen printing is performed on the upper surface of the high thermal conductive insulating material Wiring can be easily formed by this method. Further, when there is a height difference between the electrode portion on the upper surface of the semiconductor element and the electrode portion on the mounting member, the high thermal conductive insulating material is directed from the electrode portion side on the upper surface of the semiconductor element toward the electrode portion side of the mounting member. In this way, the wiring can be easily formed on the upper surface of the high thermal conductive insulating material by a droplet discharge method such as inkjet.

図１は本発明の実施例１のＬＥＤパッケージの構造を図３のＡ−Ａ線に沿って示す断面図である。1 is a cross-sectional view showing the structure of the LED package of Example 1 of the present invention along the line AA in FIG. 図２は図３のＢ−Ｂ線に沿って示す断面図である。2 is a cross-sectional view taken along line BB in FIG. 図３は実施例１のＬＥＤパッケージの平面図である。FIG. 3 is a plan view of the LED package of the first embodiment. 図４は実施例２のＬＥＤパッケージの構造を図６のＣ−Ｃ線に沿って示す断面図である。4 is a cross-sectional view showing the structure of the LED package of Example 2 along line CC in FIG. 図５は図６のＤ−Ｄ線に沿って示す断面図である。FIG. 5 is a cross-sectional view taken along line DD in FIG. 図６は実施例２のＬＥＤパッケージの平面図である。6 is a plan view of the LED package of Example 2. FIG.

以下、本発明を実施するための形態をＬＥＤパッケージに適用して具体化した２つの実施例１，２を説明する。   Hereinafter, two Examples 1 and 2 which embodied the form for implementing this invention to an LED package are demonstrated.

本発明の実施例１のＬＥＤパッケージの構成を図１乃至図３に基づいて説明する。
搭載部材１１は、リードフレーム等の高熱伝導性材料により形成され、その素子搭載部に半導体素子であるＬＥＤ素子１２がダイボンディング（接合）されている。このＬＥＤ素子１２の上面の両側には、２つの電極部１３が形成されている。 The configuration of the LED package of Example 1 of the present invention will be described with reference to FIGS.
The mounting member 11 is formed of a high thermal conductivity material such as a lead frame, and the LED element 12 as a semiconductor element is die-bonded (joined) to the element mounting portion. Two electrode portions 13 are formed on both sides of the upper surface of the LED element 12.

このＬＥＤ素子１２の全周を取り囲むように高熱伝導性絶縁材料１４がインクジェット、ディスペンサ等の液滴吐出法により設けられている。この高熱伝導性絶縁材料１４は、ＬＥＤ素子１２全周の側面と搭載部材１１とに密着して、ＬＥＤ素子１２全周の側面から熱を搭載部材１１へ効率良く伝達する放熱経路の構成材として機能すると共に、ＬＥＤ素子１２の側面上端から搭載部材１の上面に向けて傾斜するスロープ状に形成され、後述する配線１７の下地材としても機能する。   A high thermal conductive insulating material 14 is provided by a droplet discharge method such as inkjet or dispenser so as to surround the entire circumference of the LED element 12. The high thermal conductive insulating material 14 is in close contact with the side surface of the entire periphery of the LED element 12 and the mounting member 11, and serves as a constituent material of a heat dissipation path that efficiently transfers heat from the side surface of the entire periphery of the LED element 12 to the mounting member 11. While functioning, it forms in the shape of a slope which inclines toward the upper surface of the mounting member 1 from the side surface upper end of the LED element 12, and functions also as a base material of the wiring 17 mentioned later.

この高熱伝導性絶縁材料１４は、後述する封止材料１８よりも熱伝導率が高い絶縁材料で形成され、例えば、エポキシ系樹脂、シリコン樹脂、アクリル樹脂、ポリイミド系樹脂等の絶縁性樹脂に高熱伝導性フィラーを混入させた高熱伝導性絶縁樹脂を用いても良いし、或は、高熱伝導性無機材料（例えば二酸化ケイ素等のガラス、窒化アルミニウム等）を用いても良い。更に、高熱伝導性絶縁材料１４は、ＬＥＤ素子１２や搭載部材１１に対する密着性や耐熱性に優れた材料が望ましく、また、ＬＥＤ素子１２や搭載部材１１との間の熱膨張率の差が小さい材料が望ましい。搭載部材１１に搭載する半導体素子がＬＥＤ素子１２等の発光素子の場合は、透明な高熱伝導性絶縁材料１４を用いると良い。   The high thermal conductivity insulating material 14 is formed of an insulating material having a higher thermal conductivity than a sealing material 18 described later. For example, an insulating resin such as an epoxy resin, a silicon resin, an acrylic resin, or a polyimide resin has a high heat. A highly thermally conductive insulating resin mixed with a conductive filler may be used, or a highly thermally conductive inorganic material (for example, glass such as silicon dioxide, aluminum nitride) may be used. Further, the high thermal conductivity insulating material 14 is desirably a material having excellent adhesion and heat resistance to the LED element 12 and the mounting member 11, and the difference in coefficient of thermal expansion between the LED element 12 and the mounting member 11 is small. Material is desirable. In the case where the semiconductor element mounted on the mounting member 11 is a light emitting element such as the LED element 12, a transparent high thermal conductive insulating material 14 is preferably used.

ＬＥＤ素子１２の上面の電極部１３と搭載部材１１の電極部１６との間の配線経路は、高熱伝導性絶縁材料１４で傾斜面に形成され、該高熱伝導性絶縁材料１４の上面に、インクジェット、ディスペンサ等の液滴吐出法により導電性インクを吐出して配線１７が形成され、この配線１７によってＬＥＤ素子１２の電極部１３と搭載部材１１の電極部１６とが接続されている。   The wiring path between the electrode portion 13 on the upper surface of the LED element 12 and the electrode portion 16 of the mounting member 11 is formed on the inclined surface with the high thermal conductive insulating material 14, and the inkjet is formed on the upper surface of the high thermal conductive insulating material 14. The conductive ink is discharged by a droplet discharge method such as a dispenser to form a wiring 17, and the wiring 17 connects the electrode portion 13 of the LED element 12 and the electrode portion 16 of the mounting member 11.

搭載部材１１に搭載したＬＥＤ素子１２及び配線１７は、それらの上側から透明な封止材料１８によって封止されている。この封止材料１８は、高熱伝導性絶縁材料１４よりも熱伝導率が低い透明な絶縁性樹脂等を用いれば良い。   The LED element 12 and the wiring 17 mounted on the mounting member 11 are sealed with a transparent sealing material 18 from above. The sealing material 18 may be made of a transparent insulating resin having a lower thermal conductivity than the high thermal conductive insulating material 14.

以上説明した本実施例１のＬＥＤパッケージは、封止材料１８よりも熱伝導率が高い高熱伝導性絶縁材料１４をＬＥＤ素子１２の側面と搭載部材１１とに密着させるように設けることで、ＬＥＤ素子１２の側面から熱を搭載部材１１へ伝達する放熱経路を構成している。この構成では、ＬＥＤ素子１２の側面と封止材料１８との間に高熱伝導性絶縁材料１４が介在されているため、ＬＥＤ素子１２の側面から封止材料１８への直接的な熱伝達は高熱伝導性絶縁材料１４で妨げられるが、高熱伝導性絶縁材料１４は封止材料１８よりも熱伝導率が高いため、ＬＥＤ素子１２の側面から熱を高熱伝導性絶縁材料１４を介して搭載部材１１へ効率良く伝達して放熱させることが可能となり、高熱伝導性絶縁材料１４と搭載部材１１の高熱伝導性を有効に活用して放熱性能を高めることができる。   In the LED package of the first embodiment described above, the high thermal conductivity insulating material 14 having higher thermal conductivity than the sealing material 18 is provided so as to be in close contact with the side surface of the LED element 12 and the mounting member 11. A heat dissipation path for transferring heat from the side surface of the element 12 to the mounting member 11 is configured. In this configuration, since the high thermal conductive insulating material 14 is interposed between the side surface of the LED element 12 and the sealing material 18, direct heat transfer from the side surface of the LED element 12 to the sealing material 18 is high heat. Although it is hindered by the conductive insulating material 14, the high thermal conductive insulating material 14 has a higher thermal conductivity than the sealing material 18, and thus heat is transmitted from the side surface of the LED element 12 through the high thermal conductive insulating material 14. It is possible to efficiently transmit heat to and dissipate heat, and the high heat conductivity of the high thermal conductivity insulating material 14 and the mounting member 11 can be effectively utilized to enhance the heat radiation performance.

例えば、ＬＥＤ素子１２を封止する封止材料全体を高熱伝導性絶縁材料で形成することが考えられるが、高熱伝導性絶縁材料は、一般的な封止樹脂と比較してコストが高いため、封止材料全体を高熱伝導性絶縁材料で形成すると、製造コストが高くなる。   For example, it is conceivable to form the entire sealing material for sealing the LED element 12 with a high thermal conductive insulating material, but the high thermal conductive insulating material has a higher cost than a general sealing resin. If the entire sealing material is formed of a highly thermally conductive insulating material, the manufacturing cost increases.

これに対し、本実施例１では、ＬＥＤ素子１２の側面と封止材料１８との間の放熱経路を構成するのに必要な部分のみを高熱伝導性絶縁材料１４で形成するだけであるため、コストアップ幅を少なくできると共に、高熱伝導性絶縁材料１４と搭載部材１１の高熱伝導性を有効に活用して放熱性能を高めることができるため、ＬＥＤパッケージ全体の小型化も可能となる。これにより、ＬＥＤパッケージの放熱性能の向上を小型化や低コスト化と両立させながら実現することができる。   On the other hand, in the present Example 1, only the portion necessary for configuring the heat dissipation path between the side surface of the LED element 12 and the sealing material 18 is formed of the high thermal conductive insulating material 14, The cost increase range can be reduced, and since the heat dissipation performance can be enhanced by effectively utilizing the high thermal conductivity of the high thermal conductive insulating material 14 and the mounting member 11, the entire LED package can be downsized. Thereby, the improvement of the heat dissipation performance of the LED package can be realized while achieving both downsizing and cost reduction.

しかも、本実施例１では、高熱伝導性絶縁材料１４の上面に、ＬＥＤ素子１２の上面の電極部１３と搭載部材１１の電極部１６とを接続する配線１７を形成するようにしたので、放熱経路の構成材として用いる高熱伝導性絶縁材料１４を、配線１７の下地材としても機能させることができると共に、配線１７をインクジェット、ディスペンサ等の液滴吐出法により能率良く形成することができて、ＬＥＤパッケージの低コスト化及び小型化に貢献できる。   In addition, in the first embodiment, the wiring 17 that connects the electrode portion 13 on the upper surface of the LED element 12 and the electrode portion 16 of the mounting member 11 is formed on the upper surface of the high thermal conductive insulating material 14. The high thermal conductive insulating material 14 used as a constituent material of the path can function as a base material of the wiring 17 and the wiring 17 can be efficiently formed by a droplet discharge method such as an inkjet or a dispenser. This can contribute to cost reduction and downsizing of the LED package.

尚、本発明は、ＬＥＤ素子１２の側面の一部に高熱伝導性絶縁材料１４が設けられていない箇所が存在しても良いが、本実施例１のように、高熱伝導性絶縁材料１４をＬＥＤ素子１２の全周を取り囲むように設けた構成とすれば、ＬＥＤ素子１２全周の側面から熱が効率良く搭載部材１１に伝達されて放熱されるようになり、熱伝達性能を向上させることができる。   In the present invention, there may be a portion where the high thermal conductivity insulating material 14 is not provided on a part of the side surface of the LED element 12, but the high thermal conductivity insulating material 14 is provided as in the first embodiment. If the configuration is provided so as to surround the entire periphery of the LED element 12, heat is efficiently transmitted from the side surface of the entire periphery of the LED element 12 to the heat dissipating member 11, and heat transfer performance is improved. Can do.

次に、図４乃至図６を用いて本発明の実施例２のＬＥＤパッケージの構成を説明する。 搭載部材２１は、リードフレーム等の高熱伝導性材料により形成され、その所定位置に素子搭載凹部２２が形成されている。この搭載部材２１の素子搭載凹部２２の底面中央部には、半導体素子であるＬＥＤ素子２３がダイボンディング（接合）されている。素子搭載凹部２２の深さ寸法（高さ寸法）は、ＬＥＤ素子２３の高さ寸法とほぼ同一に設定され、素子搭載凹部２２内に搭載したＬＥＤ素子２３上面の電極部２４が搭載部材２１上面の電極部２５とほぼ同一高さとなっている。   Next, the configuration of the LED package of Example 2 of the present invention will be described with reference to FIGS. The mounting member 21 is formed of a high thermal conductivity material such as a lead frame, and an element mounting recess 22 is formed at a predetermined position thereof. An LED element 23, which is a semiconductor element, is die-bonded (joined) to the center of the bottom surface of the element mounting recess 22 of the mounting member 21. The depth dimension (height dimension) of the element mounting recess 22 is set to be almost the same as the height dimension of the LED element 23, and the electrode portion 24 on the upper surface of the LED element 23 mounted in the element mounting recess 22 is the upper surface of the mounting member 21. The height of the electrode portion 25 is almost the same as that of the electrode portion 25.

搭載部材２１の素子搭載凹部２２内のうちのＬＥＤ素子２３の周囲に、封止材料２８よりも熱伝導率が高い高熱伝導性絶縁材料２６がインクジェット、ディスペンサ等の液滴吐出法により充填されている。この高熱伝導性絶縁材料２６は、前記実施例１の高熱伝導性絶縁材料１４と同様の材料で形成され、ＬＥＤ素子２３全周の側面と搭載部材２１とに密着して、ＬＥＤ素子２３全周の側面から熱を搭載部材２１へ効率良く伝達する放熱経路の構成材として機能すると共に、後述する配線２７の下地材としても機能する。   The high thermal conductivity insulating material 26 having a higher thermal conductivity than the sealing material 28 is filled around the LED element 23 in the element mounting recess 22 of the mounting member 21 by a droplet discharge method such as inkjet or dispenser. Yes. The high thermal conductivity insulating material 26 is formed of the same material as the high thermal conductivity insulating material 14 of the first embodiment, and is in close contact with the side surface of the entire circumference of the LED element 23 and the mounting member 21, and In addition to functioning as a constituent material of a heat dissipation path for efficiently transferring heat from the side surface to the mounting member 21, it also functions as a base material for the wiring 27 described later.

ＬＥＤ素子２３の上面の電極部２４と搭載部材２１の電極部２５との間の配線経路は、高熱伝導性絶縁材料２６で平坦化され、該高熱伝導性絶縁材料２６の上面に、インクジェット、ディスペンサ等の液滴吐出法又はスクリーン印刷等の印刷法により導電性インクを吐出して配線２７が形成され、この配線２７によってＬＥＤ素子２３の電極部２５と搭載部材２１の電極部２５とが接続されている。   The wiring path between the electrode part 24 on the upper surface of the LED element 23 and the electrode part 25 of the mounting member 21 is flattened with a high thermal conductive insulating material 26, and an inkjet, a dispenser is formed on the upper surface of the high thermal conductive insulating material 26. Conductive ink is discharged by a droplet discharge method such as screen printing or a printing method such as screen printing to form the wiring 27, and the wiring 27 connects the electrode portion 25 of the LED element 23 and the electrode portion 25 of the mounting member 21. ing.

搭載部材２１の素子搭載凹部２２内に搭載したＬＥＤ素子２３及び配線２７は、透明な封止材料２８によって封止されている。この封止材料２８は、高熱伝導性絶縁材料２６よりも熱伝導率が低い透明な樹脂等を用いれば良い。   The LED element 23 and the wiring 27 mounted in the element mounting recess 22 of the mounting member 21 are sealed with a transparent sealing material 28. The sealing material 28 may be made of a transparent resin having a lower thermal conductivity than the high thermal conductive insulating material 26.

以上説明した本実施例２のＬＥＤパッケージは、搭載部材２１の素子搭載凹部２２内にＬＥＤ素子１２を搭載して、該素子搭載凹部２２内のうちのＬＥＤ素子２３の周囲に、封止材料２８よりも熱伝導率が高い高熱伝導性絶縁材料２６を充填するようにしているため、ＬＥＤ素子２３の周囲に高熱伝導性絶縁材料２６を容易に設けることができ、該高熱伝導性絶縁材料２６をＬＥＤ素子１２全周の側面と搭載部材２１とに確実に密着させることができて、ＬＥＤ素子２３全周の側面から熱を高熱伝導性絶縁材料２６を介して搭載部材２１へ効率良く伝達して放熱させることが可能となり、高熱伝導性絶縁材料２６と搭載部材２１の高熱伝導性を有効に活用して放熱性能を高めることができ、前記実施例１と同様の効果を得ることができる。   In the LED package of the second embodiment described above, the LED element 12 is mounted in the element mounting recess 22 of the mounting member 21, and the sealing material 28 is provided around the LED element 23 in the element mounting recess 22. Since the high thermal conductivity insulating material 26 having higher thermal conductivity is filled, the high thermal conductivity insulating material 26 can be easily provided around the LED element 23. The LED element 12 can be reliably brought into close contact with the side surface of the entire periphery and the mounting member 21, and heat can be efficiently transferred from the side surface of the entire periphery of the LED element 23 to the mounting member 21 through the high thermal conductive insulating material 26. It is possible to dissipate heat, and the high thermal conductivity of the high thermal conductivity insulating material 26 and the mounting member 21 can be effectively utilized to improve the heat radiation performance, and the same effect as in the first embodiment can be obtained.

しかも、本実施例２では、ＬＥＤ素子２３の上面の電極部２４と搭載部材２１の電極部２５との間の配線経路を高熱伝導性絶縁材料２６で平坦化して、該高熱伝導性絶縁材料２６の上面にインクジェット、ディスペンサ等の液滴吐出法により配線２７を形成するようにしているため、放熱経路の構成材として用いる高熱伝導性絶縁材料２６を、配線２７の下地材としても機能させることができると共に、配線２７をインクジェット、ディスペンサ等の液滴吐出法又はスクリーン印刷等の印刷法により能率良く形成することができて、ＬＥＤパッケージの低コスト化及び小型化に貢献できる。   Moreover, in the second embodiment, the wiring path between the electrode part 24 on the upper surface of the LED element 23 and the electrode part 25 of the mounting member 21 is flattened with the high thermal conductive insulating material 26, and the high thermal conductive insulating material 26 is used. Since the wiring 27 is formed on the upper surface by a droplet discharge method such as ink jet or dispenser, the high thermal conductive insulating material 26 used as a constituent material of the heat dissipation path can also function as a base material of the wiring 27. In addition, the wiring 27 can be efficiently formed by a droplet discharge method such as inkjet or dispenser or a printing method such as screen printing, which can contribute to cost reduction and miniaturization of the LED package.

尚、上記実施例１，２では、ＬＥＤ素子の上面の電極部と搭載部材の電極部との間を接続する配線を液滴吐出法又は印刷法により形成するようにしたが、本発明は、電極部間をボンディングワイヤで接続する構成としても良い。   In Examples 1 and 2, the wiring connecting the electrode portion on the upper surface of the LED element and the electrode portion of the mounting member is formed by the droplet discharge method or the printing method. It is good also as a structure which connects between electrode parts with a bonding wire.

その他、本発明は、ＬＥＤ素子以外の半導体素子を搭載部材に搭載した半導体パッケージにも適用して実施できる等、要旨を逸脱しない範囲内で種々変更して実施できることは言うまでもない。   In addition, it goes without saying that the present invention can be implemented with various modifications without departing from the gist, such as being applicable to a semiconductor package in which a semiconductor element other than an LED element is mounted on a mounting member.

１１…搭載部材、１２…ＬＥＤ素子（半導体素子）、１３…電極部、１４…高熱伝導性絶縁材料、１６…電極部、１７…配線、１８…封止材料、２１…搭載部材、２２…素子搭載凹部、２３…ＬＥＤ素子（半導体素子）、２４，２５…電極部、２６…高熱伝導性絶縁材料、２７…配線、２８…封止材料   DESCRIPTION OF SYMBOLS 11 ... Mounting member, 12 ... LED element (semiconductor element), 13 ... Electrode part, 14 ... High heat conductive insulating material, 16 ... Electrode part, 17 ... Wiring, 18 ... Sealing material, 21 ... Mounting member, 22 ... Element Mounting recess, 23 ... LED element (semiconductor element), 24, 25 ... electrode part, 26 ... high thermal conductivity insulating material, 27 ... wiring, 28 ... sealing material

Claims (5)

搭載部材に半導体素子を搭載してその上側から封止材料で封止した半導体パッケージにおいて、
前記封止材料よりも熱伝導率が高い高熱伝導性絶縁材料を前記半導体素子の側面と前記搭載部材とに密着させるように設けることで、前記半導体素子の側面から熱を前記搭載部材へ伝達する放熱経路を構成したことを特徴とする半導体パッケージ。 In a semiconductor package in which a semiconductor element is mounted on a mounting member and sealed with a sealing material from above,
Heat is transmitted from the side surface of the semiconductor element to the mounting member by providing a high thermal conductivity insulating material having a higher thermal conductivity than the sealing material so as to be in close contact with the side surface of the semiconductor element and the mounting member. A semiconductor package comprising a heat dissipation path. 前記高熱伝導性絶縁材料は、前記半導体素子の全周を取り囲むように設けられていることを特徴とする請求項１に記載の半導体パッケージ。   The semiconductor package according to claim 1, wherein the high thermal conductivity insulating material is provided so as to surround an entire circumference of the semiconductor element. 前記半導体素子は、前記搭載部材に形成した素子搭載凹部内に搭載され、該素子搭載凹部内のうちの該半導体素子の周囲に前記高熱伝導性絶縁材料が充填されていることを特徴とする請求項２に記載の半導体パッケージ。   The semiconductor element is mounted in an element mounting recess formed in the mounting member, and the high thermal conductivity insulating material is filled around the semiconductor element in the element mounting recess. Item 3. The semiconductor package according to Item 2. 前記高熱伝導性絶縁材料の上面には、前記半導体素子の上面の電極部と前記搭載部材の電極部とを接続する配線が形成されていることを特徴とする請求項１乃至３のいずれかに記載の半導体パッケージ。   The wiring which connects the electrode part of the upper surface of the said semiconductor element, and the electrode part of the said mounting member is formed in the upper surface of the said highly heat conductive insulating material. The semiconductor package described. 前記配線は、液滴吐出法又は印刷法により形成されていることを特徴とする請求項４に記載の半導体パッケージ。   The semiconductor package according to claim 4, wherein the wiring is formed by a droplet discharge method or a printing method.
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