JP2013008872A - 垂直型発光素子及びその製造方法 - Google Patents
垂直型発光素子及びその製造方法 Download PDFInfo
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- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
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- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
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Abstract
【解決手段】互いに対向して形成され、光を共振させる下側多層反射膜および上側多層反射膜と、上側多層反射膜の下に形成され、上側多層反射膜と異なる組成の層を含む中間層と、光の共振方向と平行な断面において中間層を挟み、且つ、上端が中間層の上面よりも上側となるように形成された電極部とを備える垂直型発光素子を提供する。上側多層反射膜は、中間層を挟んで電極部を形成した後に、中間層上に積層して形成される。
【選択図】図1
Description
特許文献1 特開2003−332683号公報
Claims (13)
- 垂直型発光素子であって、
互いに対向して形成され、光を共振させる下側多層反射膜および上側多層反射膜と、
前記上側多層反射膜の下に形成され、前記上側多層反射膜と異なる組成の層を含む中間層と、
前記光の共振方向と平行な断面において前記中間層を挟み、且つ、上端が前記中間層の上面よりも上側となるように形成された電極部と
を備える垂直型発光素子。 - 前記上側多層反射膜は、前記中間層を挟んで前記電極部を形成した後に、前記中間層上に積層して形成された
請求項1に記載の垂直型発光素子。 - 前記中間層、前記電極部および前記上側多層反射膜が形成されたメサポスト部を更に備え、
前記電極部の前記中間層側の端部が、前記メサポスト部の周縁側の端部よりも上方に延伸した
請求項1または2に記載の垂直型発光素子。 - 前記中間層は傾斜した側面を有し、
前記電極部は、前記中間層の前記側面に沿って形成される
請求項3に記載の垂直型発光素子。 - 前記中間層は垂直な側面を有し、
前記電極部は、前記中間層よりも厚く形成される
請求項1または2に記載の垂直型発光素子。 - 前記電極部の一部は、前記中間層の上面に形成される
請求項1から5のいずれか一項に記載の垂直型発光素子。 - 前記上側多層反射膜における各層は、前記中間層の上面と対向する位置に略平坦な平坦部を有し、
それぞれの前記平坦部の面積は、前記中間層からの距離に応じて減少する
請求項1から6のいずれか一項に記載の垂直型発光素子。 - 前記中間層および前記下側多層反射膜の間に形成され、光を生成する活性層を更に備え、
前記電極部の前記中間層側の端部と前記活性層との距離が、前記メサポスト部の周縁側の端部と前記活性層との距離より大きい
請求項3に記載の垂直型発光素子。 - 前記電極部は、前記中間層と接して形成される
請求項1から8のいずれか一項に記載の垂直型発光素子。 - 前記中間層は、誘電体層を含む
請求項1から9のいずれか一項に記載の垂直型発光素子。 - 垂直型発光素子を製造する製造方法であって、
互いに対向して形成され、光を共振させる下側多層反射膜および上側多層反射膜を形成する段階と、
前記上側多層反射膜の下に形成され、前記上側多層反射膜と異なる組成の層を含む中間層を形成する段階と、
前記光の共振方向と平行な断面において前記中間層を挟み、且つ、上端が前記中間層の上面よりも上側となるように形成された電極部を形成する段階と
を備える製造方法。 - 前記中間層を形成した後に前記電極部を形成し、
前記電極部を形成した後に、前記上側多層反射膜を前記中間層上に積層する
請求項11に記載の製造方法。 - 前記中間層を形成する段階において、前記中間層の側面を傾斜させるように前記中間層をエッチングし、
前記電極部を形成する段階において、前記中間層の前記側面に沿って前記電極部を形成する
請求項12に記載の製造方法。
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JP2011141074A JP5839852B2 (ja) | 2011-06-24 | 2011-06-24 | 垂直型発光素子及びその製造方法 |
US13/530,255 US8861562B2 (en) | 2011-06-24 | 2012-06-22 | Vertical light emitting device and manufacturing method |
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Cited By (4)
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JP2016522576A (ja) * | 2013-05-31 | 2016-07-28 | ダンマルクス テクニスケ ウニベルシテット | 封止された内部容積を有する波長可変光子源 |
WO2016125346A1 (ja) * | 2015-02-05 | 2016-08-11 | ソニー株式会社 | 発光素子及びその製造方法 |
JP2021097183A (ja) * | 2019-12-19 | 2021-06-24 | スタンレー電気株式会社 | 垂直共振器型発光素子 |
US11901701B2 (en) | 2019-11-22 | 2024-02-13 | Ricoh Company, Ltd. | Surface emitting laser element, surface emitting laser, surface emitting laser device, light source device, and detection apparatus |
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JP6479308B2 (ja) * | 2013-08-09 | 2019-03-06 | ソニー株式会社 | 面発光レーザ素子及びその製造方法 |
US20180200970A1 (en) * | 2017-01-17 | 2018-07-19 | Mid-South Control Line, Llc | Method and Apparatus for Encapsulating Tubing with Material Having Engineered Weakened Portions |
US20220045476A1 (en) * | 2018-10-12 | 2022-02-10 | Sony Corporation | Light emitting element |
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JPH11307876A (ja) * | 1998-04-24 | 1999-11-05 | Ricoh Co Ltd | 面発光型半導体レーザ素子、光ディスク記録再生装置及びプラスティック光ファイバ用光送信装置 |
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JP2003332683A (ja) | 2002-05-17 | 2003-11-21 | Furukawa Electric Co Ltd:The | 面発光レーザ素子 |
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JPH11307876A (ja) * | 1998-04-24 | 1999-11-05 | Ricoh Co Ltd | 面発光型半導体レーザ素子、光ディスク記録再生装置及びプラスティック光ファイバ用光送信装置 |
JP2008251718A (ja) * | 2007-03-29 | 2008-10-16 | Furukawa Electric Co Ltd:The | 面発光レーザ素子および面発光レーザ素子の製造方法 |
WO2010067845A1 (ja) * | 2008-12-10 | 2010-06-17 | 古河電気工業株式会社 | 半導体レーザ素子およびその製造方法 |
JP2010183071A (ja) * | 2009-01-08 | 2010-08-19 | Furukawa Electric Co Ltd:The | 半導体発光素子およびその製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2016522576A (ja) * | 2013-05-31 | 2016-07-28 | ダンマルクス テクニスケ ウニベルシテット | 封止された内部容積を有する波長可変光子源 |
WO2016125346A1 (ja) * | 2015-02-05 | 2016-08-11 | ソニー株式会社 | 発光素子及びその製造方法 |
JPWO2016125346A1 (ja) * | 2015-02-05 | 2017-11-09 | ソニー株式会社 | 発光素子及びその製造方法 |
US11901701B2 (en) | 2019-11-22 | 2024-02-13 | Ricoh Company, Ltd. | Surface emitting laser element, surface emitting laser, surface emitting laser device, light source device, and detection apparatus |
JP2021097183A (ja) * | 2019-12-19 | 2021-06-24 | スタンレー電気株式会社 | 垂直共振器型発光素子 |
JP7406365B2 (ja) | 2019-12-19 | 2023-12-27 | スタンレー電気株式会社 | 垂直共振器型発光素子 |
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US8861562B2 (en) | 2014-10-14 |
US20130010822A1 (en) | 2013-01-10 |
JP5839852B2 (ja) | 2016-01-06 |
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