JP2013004846A - Iii族窒化物半導体発光素子の製造方法 - Google Patents
Iii族窒化物半導体発光素子の製造方法 Download PDFInfo
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- JP2013004846A JP2013004846A JP2011136197A JP2011136197A JP2013004846A JP 2013004846 A JP2013004846 A JP 2013004846A JP 2011136197 A JP2011136197 A JP 2011136197A JP 2011136197 A JP2011136197 A JP 2011136197A JP 2013004846 A JP2013004846 A JP 2013004846A
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- layer
- group iii
- nitride semiconductor
- iii nitride
- semiconductor light
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000013078 crystal Substances 0.000 claims abstract description 10
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 8
- 238000005253 cladding Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 16
- 238000000605 extraction Methods 0.000 abstract description 9
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 8
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 109
- 239000011777 magnesium Substances 0.000 description 35
- 239000000758 substrate Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000000089 atomic force micrograph Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
【解決手段】発光層14上に、MOCVD法によってp−AlGaNからなるpクラッド層15を形成する。圧力30kPa、Mg濃度は1.5×1020/cm3 とする。これにより、III 族元素極性の結晶に窒素極性の領域が多数生じ、pクラッド層15の表面は六角柱状の凹凸形状となる。次に、pクラッド層15上に、MOCVD法によって凹凸形状に沿って膜状にGaNからなるpコンタクト層16を形成する。
【選択図】図2
Description
11:nコンタクト層
12:静電耐圧層
13:nクラッド層
14:発光層
15:pクラッド層
16:pコンタクト層
17:透明電極
18:p電極
19:n電極
Claims (4)
- pクラッド層とpコンタクト層を有したIII 族窒化物半導体発光素子の製造方法において、
前記pクラッド層は、Mgをドープして結晶成長させることにより、結晶の少なくとも一部の極性を反転させて表面に凹凸形状を有するように形成し、
前記pコンタクト層は、前記pクラッド層上に前記凹凸形状に沿って形成する、
ことを特徴とするIII 族窒化物半導体発光素子の製造方法。 - 前記pクラッド層のMgドープ量は、1.2×1020/cm3 以上であることを特徴とする請求項1に記載のIII 族窒化物半導体発光素子の製造方法。
- 前記pクラッド層は、AlGaNであることを特徴とする請求項1または請求項2に記載のIII 族窒化物半導体発光素子の製造方法。
- 前記pクラッド層は、1〜100kPaで成長させる、ことを特徴とするIII 族窒化物半導体発光素子の製造方法。
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JP2011136197A JP5533791B2 (ja) | 2011-06-20 | 2011-06-20 | Iii族窒化物半導体発光素子の製造方法 |
US13/525,110 US8945965B2 (en) | 2011-06-20 | 2012-06-15 | Method for producing a group III nitride semiconductor light-emitting device |
CN201210205978.2A CN102842657B (zh) | 2011-06-20 | 2012-06-18 | 用于制造iii族氮化物半导体发光器件的方法 |
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JP2011136197A JP5533791B2 (ja) | 2011-06-20 | 2011-06-20 | Iii族窒化物半導体発光素子の製造方法 |
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JP2013004846A true JP2013004846A (ja) | 2013-01-07 |
JP5533791B2 JP5533791B2 (ja) | 2014-06-25 |
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CN (1) | CN102842657B (ja) |
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CN108365066B (zh) * | 2013-02-08 | 2020-06-02 | 晶元光电股份有限公司 | 发光二极管及其制作方法 |
CN103258930B (zh) * | 2013-05-09 | 2016-03-02 | 大连理工大学 | 一种GaN LED外延片结构及制备方法 |
CN103325908B (zh) * | 2013-05-25 | 2017-08-29 | 集美大学 | 一种六角形粗化表面的led外延片的制备方法 |
JP6479308B2 (ja) * | 2013-08-09 | 2019-03-06 | ソニー株式会社 | 面発光レーザ素子及びその製造方法 |
WO2019066921A1 (en) | 2017-09-29 | 2019-04-04 | Intel Corporation | GROUP III NITRIDE ELECTROLUMINESCENT DEVICES COMPRISING POLARIZATION JUNCTION |
US11355652B2 (en) | 2017-09-29 | 2022-06-07 | Intel Corporation | Group III-nitride polarization junction diodes |
WO2019066916A1 (en) | 2017-09-29 | 2019-04-04 | Intel Corporation | GROUP III COMPLEMENTARY TYPE NITRIDE TRANSISTORS WITH COMPLEMENTARY POLARIZATION JUNCTIONS |
WO2019066914A1 (en) | 2017-09-29 | 2019-04-04 | Intel Corporation | III-N TRANSISTORS WITH TUNNEL POLARIZATION JUNCTION |
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JP2006339427A (ja) * | 2005-06-02 | 2006-12-14 | Hitachi Cable Ltd | 窒化物半導体発光ダイオード用エピタキシャルウエハの製造方法、窒化物半導体発光ダイオード用エピタキシャルウエハ、及び窒化物半導体発光ダイオード |
JP2010205988A (ja) * | 2009-03-04 | 2010-09-16 | Panasonic Corp | 窒化物半導体素子及びその製造方法 |
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US5903017A (en) * | 1996-02-26 | 1999-05-11 | Kabushiki Kaisha Toshiba | Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN |
JP3882539B2 (ja) * | 2000-07-18 | 2007-02-21 | ソニー株式会社 | 半導体発光素子およびその製造方法、並びに画像表示装置 |
JP2002151796A (ja) * | 2000-11-13 | 2002-05-24 | Sharp Corp | 窒化物半導体発光素子とこれを含む装置 |
JP2003046196A (ja) * | 2001-08-01 | 2003-02-14 | Fuji Photo Film Co Ltd | 半導体レーザおよびその作製方法 |
JP3699917B2 (ja) | 2001-09-19 | 2005-09-28 | 株式会社東芝 | 半導体素子及びその製造方法 |
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- 2012-06-15 US US13/525,110 patent/US8945965B2/en active Active
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US8945965B2 (en) | 2015-02-03 |
US20120322189A1 (en) | 2012-12-20 |
JP5533791B2 (ja) | 2014-06-25 |
CN102842657A (zh) | 2012-12-26 |
CN102842657B (zh) | 2015-09-09 |
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