JP2012510162A - 有機表面パッシベーションでめっきの進行に差を付けて遅らせることによるボトムアップめっき - Google Patents
有機表面パッシベーションでめっきの進行に差を付けて遅らせることによるボトムアップめっき Download PDFInfo
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- JP2012510162A JP2012510162A JP2011537626A JP2011537626A JP2012510162A JP 2012510162 A JP2012510162 A JP 2012510162A JP 2011537626 A JP2011537626 A JP 2011537626A JP 2011537626 A JP2011537626 A JP 2011537626A JP 2012510162 A JP2012510162 A JP 2012510162A
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- 238000002161 passivation Methods 0.000 title claims abstract description 73
- 238000007747 plating Methods 0.000 title claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 238000000034 method Methods 0.000 claims abstract description 74
- 239000004020 conductor Substances 0.000 claims abstract description 20
- 239000004094 surface-active agent Substances 0.000 claims description 23
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 18
- 238000004528 spin coating Methods 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 9
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 5
- 239000012964 benzotriazole Substances 0.000 claims description 5
- 239000012051 hydrophobic carrier Substances 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 70
- 239000010408 film Substances 0.000 description 53
- 239000000243 solution Substances 0.000 description 44
- 230000004888 barrier function Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 238000005429 filling process Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 239000003112 inhibitor Substances 0.000 description 4
- 239000007888 film coating Substances 0.000 description 3
- 238000009501 film coating Methods 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000012052 hydrophilic carrier Substances 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002894 organic compounds Chemical group 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1005—Formation and after-treatment of dielectrics
- H01L2221/1052—Formation of thin functional dielectric layers
- H01L2221/1057—Formation of thin functional dielectric layers in via holes or trenches
- H01L2221/1063—Sacrificial or temporary thin dielectric films in openings in a dielectric
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Electroplating Methods And Accessories (AREA)
- Chemically Coating (AREA)
Abstract
Description
Claims (15)
- 基板を処理する方法であって、
トレンチ構造又はビア構造が形成された基板を覆うようにシード層を形成することと、
前記シード層の一部を有機パッシベーション膜で被覆することと、
前記トレンチ構造又はビア構造をめっき液に浸漬して、前記有機パッシベーション膜で被覆されないシード層部分の上に導電材料を堆積させることと
を含む方法。 - 前記シード層の一部を被覆することが、前記トレンチ構造又はビア構造の上部を覆うシード層を被覆することを含む、請求項1に記載の方法。
- 前記有機パッシベーション膜は、前記めっき液に溶解させることができる、請求項2に記載の方法。
- 前記シード層の一部を被覆することが、有機界面活性剤を含有する溶液を前記基板上にスピン塗布することを含む、請求項3に記載の方法。
- 前記シード層の一部を被覆することが、更に、前記トレンチ構造又はビア構造内への有機パッシベーション膜の目標深さに応じてスピン塗布の回転速度を決定することを含む、請求項4に記載の方法。
- 前記有機界面活性剤が1−2−3−ベンゾトリアゾール(BTA)を含む、請求項4に記載の方法。
- 前記溶液がイソプロピルアルコール(IPA)を含む、請求項6に記載の方法。
- 前記シード層の一部を被覆することが、有機界面活性剤を含有する溶液に前記基板を浸漬することを含む、請求項3に記載の方法。
- 前記溶液が、
疎水性担体と、
疎水性担体に懸濁された前記有機界面活性剤と
を含む、請求項8に記載の方法。 - 前記基板を前記めっき液から取り出すことと、
前記シード層の、これまで前記パッシベーション膜で被覆されていた部分から前記パッシベーション膜を除去することと、
前記基板を前記めっき液に浸漬して、前記基板に前記導電材料をめっきすることと
を更に含む、請求項2に記載の方法。 - 前記パッシベーション膜を除去することが、前記基板をアニールすることを含む、請求項10に記載の方法。
- 基板を処理する方法であって、
トレンチ構造又はビア構造が形成された基板を覆うようにシード層を堆積させることと、
前記基板にスピン塗布して、前記シード層の少なくとも一部を覆うようにパッシベーション膜を形成することと、
前記トレンチ構造又はビア構造をめっき液に浸漬して、前記パッシベーション膜で被覆されないシード層部分の上に導電材料を堆積させ、前記パッシベーション膜を前記めっき液に溶解させることと
を含む方法。 - 前記基板にスピン塗布することが、前記パッシベーション膜が前記トレンチ構造又はビア構造の側壁に沿って達する深さを制御することを含む、請求項12に記載の方法。
- 深さを制御することが、
スピン回転速度を上げて前記深さを小さくすることと、
前記スピン回転速度を下げて前記深さを深くすることと
を含む、請求項13に記載の方法。 - 深さを制御することが、更に、スピン塗布中に異なる粘度の担体を使用して前記深さを小さくすることを含む、請求項14に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11754008P | 2008-11-24 | 2008-11-24 | |
US61/117,540 | 2008-11-24 | ||
US12/620,818 | 2009-11-18 | ||
US12/620,818 US8293647B2 (en) | 2008-11-24 | 2009-11-18 | Bottom up plating by organic surface passivation and differential plating retardation |
PCT/US2009/065193 WO2010059857A2 (en) | 2008-11-24 | 2009-11-19 | Bottom up plating by organic surface passivation and differential plating retardation |
Publications (3)
Publication Number | Publication Date |
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JP2012510162A true JP2012510162A (ja) | 2012-04-26 |
JP2012510162A5 JP2012510162A5 (ja) | 2013-01-17 |
JP5409801B2 JP5409801B2 (ja) | 2014-02-05 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011537626A Expired - Fee Related JP5409801B2 (ja) | 2008-11-24 | 2009-11-19 | 有機表面パッシベーションでめっきの進行に差を付けて遅らせることによるボトムアップめっき |
Country Status (6)
Country | Link |
---|---|
US (1) | US8293647B2 (ja) |
JP (1) | JP5409801B2 (ja) |
KR (1) | KR101368308B1 (ja) |
CN (1) | CN102224574B (ja) |
TW (1) | TWI397616B (ja) |
WO (1) | WO2010059857A2 (ja) |
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JP2015034306A (ja) * | 2013-08-07 | 2015-02-19 | 大日本印刷株式会社 | 金属充填構造体の製造方法及び金属充填構造体 |
JP2018533218A (ja) * | 2015-10-23 | 2018-11-08 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 表面毒化処理によるボトムアップ式間隙充填 |
JPWO2020255772A1 (ja) * | 2019-06-18 | 2020-12-24 |
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JP2012195488A (ja) * | 2011-03-17 | 2012-10-11 | Renesas Electronics Corp | 半導体装置の製造方法、及び半導体装置 |
JP2015034306A (ja) * | 2013-08-07 | 2015-02-19 | 大日本印刷株式会社 | 金属充填構造体の製造方法及び金属充填構造体 |
JP2018533218A (ja) * | 2015-10-23 | 2018-11-08 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 表面毒化処理によるボトムアップ式間隙充填 |
JPWO2020255772A1 (ja) * | 2019-06-18 | 2020-12-24 | ||
JP7254178B2 (ja) | 2019-06-18 | 2023-04-07 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
Also Published As
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JP5409801B2 (ja) | 2014-02-05 |
CN102224574B (zh) | 2014-06-11 |
CN102224574A (zh) | 2011-10-19 |
KR101368308B1 (ko) | 2014-02-26 |
US8293647B2 (en) | 2012-10-23 |
US20100130007A1 (en) | 2010-05-27 |
KR20110102374A (ko) | 2011-09-16 |
WO2010059857A2 (en) | 2010-05-27 |
TW201026911A (en) | 2010-07-16 |
WO2010059857A3 (en) | 2010-08-19 |
TWI397616B (zh) | 2013-06-01 |
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