JP2012509575A - 基板処理のための高温測定法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Radiation Pyrometers (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
図7〜8は、本発明の実施形態による基板処理システムの実施例を示している。図7に示す処理装置710は堆積リアクタであり、上側ドーム714、下側ドーム716、および上側ドーム714と下側ドーム716の間の側壁718を有する堆積チャンバ712を含む。側壁718を通して冷却液(図示せず)を循環させ、ドーム714および716を側壁718に対して密閉するために用いられるOリングを冷却することができる。上側ライナ782および下側ライナ784が、側壁718の内面に接するように取り付けられる。上側ドーム714および下側ドーム716は、加熱光が通過して堆積チャンバ712の中に入ることができるように、透過性材料で製造される。
Claims (15)
- 処理チャンバと、
前記処理チャンバ内に配設された基板を支持するためのペデスタルと、
実質的に前記ペデスタルの縁部から生じる放射光を測定するための光学的な高温測定組立体であって、
受光器、および
光検出器
を含む光学的な高温測定組立体と
を備える基板処理システムであって、
前記光学的な高温測定組立体が、前記放射光の一部を受け取り、かつ、
前記ペデスタルの温度が、前記放射光の前記一部の少なくとも1つの波長の近くにおける強度から決定される基板処理システム。 - 前記受光器が、前記処理チャンバの中に配設される請求項1に記載の基板処理システム。
- 前記処理チャンバの一部が、熱ランプからの光の一部が前記処理チャンバに入ることを可能にするように透過性である請求項1に記載の基板処理システム。
- 前記少なくとも1つの波長の1つまたは複数が3μmより大きい請求項3に記載の基板処理システム。
- 受け取られる前記放射光の前記一部が、第1の強度を有する第1の波長の光、および第2の強度を有する第2の波長の光を含み、かつ、前記ペデスタルの前記温度が、前記第1の強度と前記第2の強度の比から決定される請求項1に記載の基板処理システム。
- 被覆をさらに含み、前記被覆が前記受光器を越えて少なくとも0.005インチ延びる請求項1に記載の基板処理システム。
- 前記受光器が、前記ペデスタルの前記縁部の0.200インチ以内に存在する請求項1に記載の基板処理システム。
- 前記ペデスタルが、1つまたは複数のフィーチャを該ペデスタルの前記縁部に有し、少なくとも1つの波長の近くで、前記1つまたは複数のフィーチャの近傍における見かけの光放射率を高める請求項1に記載の基板処理システム。
- 処理チャンバと、
実質的に基板の一部から生じる放射光を測定するための光学的な高温測定組立体であって、
受光器、および
光検出器
を含む光学的な高温測定組立体と
を備える基板処理システムであって、
前記光学的な高温測定組立体が、前記放射光の一部を受け取り、
前記受光器が前記処理チャンバの中に配設され、かつ、
前記基板の温度が、前記放射光の前記一部の少なくとも1つの波長の近くにおける強度から決定される基板処理システム。 - 前記基板の前記温度がセ氏約650度より低い請求項9に記載の基板処理システム。
- 前記少なくとも1つの波長の1つまたは複数が約1.2μmより小さい請求項9に記載の基板処理システム。
- 前記受光器の開口数が約0.1より小さい請求項9に記載の基板処理システム。
- 前記処理チャンバの一部が、熱ランプからの光の一部が前記処理チャンバに入ることを可能にするように透過性である請求項9に記載の基板処理システム。
- 被覆をさらに含み、前記被覆が前記受光器を越えて少なくとも0.005インチ延びる請求項9に記載の基板処理システム。
- 前記受光器が、前記基板の縁部の0.200インチ以内に存在する請求項9に記載の基板処理システム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/273,809 | 2008-11-19 | ||
US12/273,809 US8147137B2 (en) | 2008-11-19 | 2008-11-19 | Pyrometry for substrate processing |
PCT/US2009/059857 WO2010059300A2 (en) | 2008-11-19 | 2009-10-07 | Pyrometry for substrate processing |
Publications (2)
Publication Number | Publication Date |
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JP2012509575A true JP2012509575A (ja) | 2012-04-19 |
JP5743896B2 JP5743896B2 (ja) | 2015-07-01 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2011536358A Active JP5743896B2 (ja) | 2008-11-19 | 2009-10-07 | 基板処理のための高温測定法 |
Country Status (7)
Country | Link |
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US (1) | US8147137B2 (ja) |
JP (1) | JP5743896B2 (ja) |
KR (1) | KR101606501B1 (ja) |
CN (1) | CN102217033B (ja) |
DE (1) | DE112009004402B4 (ja) |
TW (1) | TWI469240B (ja) |
WO (1) | WO2010059300A2 (ja) |
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JP2016526279A (ja) * | 2013-04-30 | 2016-09-01 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 空間的に分散されたガス流路を有する流量制御ライナー |
US10170342B2 (en) | 2013-04-30 | 2019-01-01 | Applied Materials, Inc. | Flow controlled liner having spatially distributed gas passages |
CN111211074A (zh) * | 2013-04-30 | 2020-05-29 | 应用材料公司 | 具有空间分布的气体通道的气流控制衬垫 |
CN111211074B (zh) * | 2013-04-30 | 2023-09-22 | 应用材料公司 | 具有空间分布的气体通道的气流控制衬垫 |
JP2016171187A (ja) * | 2015-03-12 | 2016-09-23 | 信越半導体株式会社 | 気相成長装置及び気相成長装置に用いるリフレクタ |
CN108028213A (zh) * | 2015-12-30 | 2018-05-11 | 马特森技术有限公司 | 用于毫秒退火***的预热方法 |
JP2018535542A (ja) * | 2015-12-30 | 2018-11-29 | マットソン テクノロジー インコーポレイテッドMattson Technology, Inc. | ミリ秒アニールシステムのための予熱方法 |
JP2021005727A (ja) * | 2015-12-30 | 2021-01-14 | マトソン テクノロジー インコーポレイテッドMattson Technology, Inc. | ミリ秒アニールシステムのための予熱方法 |
CN108028213B (zh) * | 2015-12-30 | 2021-12-21 | 玛特森技术公司 | 用于毫秒退火***的预热方法 |
JP7051965B2 (ja) | 2015-12-30 | 2022-04-11 | マトソン テクノロジー インコーポレイテッド | ミリ秒アニールシステムのための予熱方法 |
JP2022088561A (ja) * | 2015-12-30 | 2022-06-14 | マトソン テクノロジー インコーポレイテッド | ミリ秒アニールシステムのための予熱方法 |
US12027427B2 (en) | 2015-12-30 | 2024-07-02 | Mattson Technology, Inc. | Preheat processes for millisecond anneal system |
Also Published As
Publication number | Publication date |
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KR20110097854A (ko) | 2011-08-31 |
DE112009004402B4 (de) | 2020-06-04 |
CN102217033A (zh) | 2011-10-12 |
DE112009004402T5 (de) | 2012-08-30 |
JP5743896B2 (ja) | 2015-07-01 |
WO2010059300A3 (en) | 2010-07-22 |
TW201030877A (en) | 2010-08-16 |
WO2010059300A2 (en) | 2010-05-27 |
US8147137B2 (en) | 2012-04-03 |
TWI469240B (zh) | 2015-01-11 |
KR101606501B1 (ko) | 2016-03-25 |
US20100124248A1 (en) | 2010-05-20 |
CN102217033B (zh) | 2013-11-06 |
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