JP2012253185A - Substrate cleaning method and substrate cleaning apparatus - Google Patents

Substrate cleaning method and substrate cleaning apparatus Download PDF

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JP2012253185A
JP2012253185A JP2011124375A JP2011124375A JP2012253185A JP 2012253185 A JP2012253185 A JP 2012253185A JP 2011124375 A JP2011124375 A JP 2011124375A JP 2011124375 A JP2011124375 A JP 2011124375A JP 2012253185 A JP2012253185 A JP 2012253185A
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substrate
cleaning
liquid
cleaning plate
support
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Ichita Saito
一太 斉藤
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3M Innovative Properties Co
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3M Innovative Properties Co
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Priority to JP2011124375A priority Critical patent/JP2012253185A/en
Priority to PCT/US2012/040106 priority patent/WO2012166856A2/en
Priority to KR1020137034830A priority patent/KR20140033174A/en
Priority to TW101119876A priority patent/TW201303985A/en
Publication of JP2012253185A publication Critical patent/JP2012253185A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

Abstract

PROBLEM TO BE SOLVED: To ensure to clean a substrate surface efficiently while preventing a cleaning liquid from contacting with an adhesive on the substrate rear surface side.SOLUTION: A substrate cleaning apparatus 10 includes: a substrate support part 16 supporting a substrate 12 at a downward posture; a cleaning plate 24 having a liquid support surface 22 and disposed at an upward posture in a working position that enables the liquid support surface 22 to face a first surface 12a of the substrate 12 supported by the substrate support part 16 through a clearance G having a predetermined dimension; a cleaning liquid supply part 26 supplying a cleaning liquid to a center region 22a of the liquid support surface 22 of the cleaning plate 24; and a cleaning plate driving part 28 rotating the cleaning plate 24 around a cleaning plate axis line 24a substantially perpendicular to the liquid support surface 22. The substrate cleaning apparatus 10 causes the cleaning liquid, flowing along the liquid support surface 22 of the cleaning plate 24 rotating around the cleaning plate axis line 24a, to contact with the first surface 12a of the substrate 12 and thereby cleaning the first surface 12a.

Description

本発明は、基板の表面を洗浄するための基板洗浄方法及び基板洗浄装置に関する。   The present invention relates to a substrate cleaning method and a substrate cleaning apparatus for cleaning the surface of a substrate.

半導体集積回路の製造技術において、所定厚みのウエハの一表面に回路を形成した後、回路形成表面（以下、回路面と称する。）にフィルムやガラス等からなる支持板を保護及び支持のために貼付した状態で、回路面の反対側の裏面を研削してウエハの厚みを一様に削減し、薄肉化したウエハを切削により分断する（一般にダイシングと称する。）ことで複数の半導体チップを作製する手法が知られている。ダイシングに際しては、薄肉化したウエハの裏面に保護及び支持用の支持フィルムを貼付する一方、ウエハの回路面から支持板を剥離して、露出した回路面を切削する。ここで、支持板を剥離したウエハの回路面に、支持板を貼付するために用いられていた接着剤が残留する場合があるので、ダイシングを実施する前に、一般に回路面を洗浄している。   In a semiconductor integrated circuit manufacturing technique, after a circuit is formed on one surface of a wafer having a predetermined thickness, a support plate made of a film, glass or the like is protected and supported on the circuit forming surface (hereinafter referred to as a circuit surface). In the affixed state, the back surface opposite to the circuit surface is ground to uniformly reduce the thickness of the wafer, and the thinned wafer is cut by cutting (generally referred to as dicing) to produce a plurality of semiconductor chips. There is a known technique to do this. When dicing, a support film for protection and support is attached to the back surface of the thinned wafer, while the support plate is peeled off from the circuit surface of the wafer to cut the exposed circuit surface. Here, since the adhesive used to stick the support plate may remain on the circuit surface of the wafer from which the support plate has been peeled off, the circuit surface is generally cleaned before dicing is performed. .

例えば特許文献１は、「ウエハを破損させることなく容易かつ迅速にウエハをサポートプレートから剥離することが可能な基板処理装置および基板処理方法」を開示する。特許文献１には、「気体供給手段１１は、厚さ方向に貫通している気体供給口１１ａ、真空口１１ｂおよび溶液／気体供給口１１ｃを有している。」、「気体供給手段１１は、溶解液が供給されることによって溶解した接着剤層３に対して気体を供給することによって、接着剤層３にサポートプレート２から基板１を分離する方向に圧力を加える。このとき、サポートプレート２は気体供給手段１１に固定されているため、接着剤層３に加わる圧力によって基板１をサポートプレート２から剥離することができる。」、「洗浄液供給手段は、基板１からサポートプレート２を剥離した後、基板１の表面を洗浄する手段である。」、「気体供給手段１１の真空口１１ｂおよび溶液／気体供給口１１ｃは、洗浄液供給手段の真空口および洗浄液供給口を兼ねている。」、「気体供給手段１１を基板１と対向するように配置し、洗浄液供給口１１ｃから洗浄液を供給する。そして、洗浄液供給口１１ｃから供給された洗浄液は、気体供給手段１１の端に環状に設けられた真空口１１ｂから吸引される。このときの洗浄液の流れを、図９中に矢印によって示す。これにより、露出しているダイシングテープ４ａは、洗浄液に曝されることなく、基板１を良好に洗浄することができる。」と記載されている。   For example, Patent Document 1 discloses “a substrate processing apparatus and a substrate processing method capable of easily and quickly peeling a wafer from a support plate without damaging the wafer”. Patent Document 1 discloses that “the gas supply unit 11 includes a gas supply port 11a, a vacuum port 11b, and a solution / gas supply port 11c penetrating in the thickness direction”. Then, by supplying a gas to the adhesive layer 3 dissolved by the supply of the dissolving liquid, pressure is applied to the adhesive layer 3 in the direction of separating the substrate 1 from the support plate 2. At this time, the support plate Since 2 is fixed to the gas supply means 11, the substrate 1 can be peeled from the support plate 2 by the pressure applied to the adhesive layer 3. "," The cleaning liquid supply means peels the support plate 2 from the substrate 1. After that, it is means for cleaning the surface of the substrate 1. ”,“ The vacuum port 11b and the solution / gas supply port 11c of the gas supply unit 11 are the vacuum port and the cleaning liquid supply of the cleaning liquid supply unit. "The gas supply means 11 is arranged so as to face the substrate 1 and the cleaning liquid is supplied from the cleaning liquid supply port 11c. The cleaning liquid supplied from the cleaning liquid supply port 11c is the gas supply means." 9, the flow of the cleaning liquid is indicated by arrows in Fig. 9. Thus, the exposed dicing tape 4a is exposed to the cleaning liquid. The substrate 1 can be satisfactorily cleaned without any failure. "

特開２００９−０５９７７６号公報（段落０００８、００２３、００２６、００３５、００３７、００７１）JP 2009-059776 A (paragraphs 0008, 0023, 0026, 0035, 0037, 0071)

半導体チップの作製工程におけるダイシング前のウエハ洗浄工程のように、支持体（ウエハの場合は支持フィルム）を基板の裏面（第２面）に貼付した状態で、基板の表面（第１面）を例えば残留接着剤の除去の目的で洗浄する際に、支持体を基板裏面に貼付するために用いられている接着剤に、表面洗浄用の洗浄液が接触しないようにすることが要求される場合がある。この場合には、洗浄液を基板裏面側の接着剤に接触させないようにしながら、より確実かつ効率的に基板表面を洗浄できることが望まれている。   As in the wafer cleaning process before dicing in the semiconductor chip manufacturing process, the substrate surface (first surface) is attached to the back surface (second surface) of the substrate with the support (support film in the case of a wafer) attached. For example, when cleaning is performed for the purpose of removing residual adhesive, it may be required that the cleaning liquid for cleaning the surface does not come into contact with the adhesive used to attach the support to the back surface of the substrate. is there. In this case, it is desired that the substrate surface can be more reliably and efficiently cleaned while preventing the cleaning liquid from coming into contact with the adhesive on the back side of the substrate.

本発明の一態様は、基板洗浄方法であって、第１面及び第１面の反対側の第２面を有する基板と、液体支持面を有する洗浄板とを用意するステップと、基板を、第１面が下方を向く下向き姿勢にするステップと、洗浄板を、液体支持面が上方を向く上向き姿勢にするステップと、下向き姿勢の基板と上向き姿勢の洗浄板とを、第１面と液体支持面とが予め定めた寸法の隙間を介して対向する作業位置に配置するステップと、上向き姿勢の洗浄板の液体支持面の中央領域に洗浄液を供給するステップと、上向き姿勢の洗浄板を、中央領域にて液体支持面に略直交する軸線として洗浄板に定められる洗浄板軸線を中心に回転させるステップと、洗浄板の液体支持面に沿って流動する洗浄液を基板の第１面に接触させて、基板の第１面を洗浄するステップと、を含む基板洗浄方法である。   One aspect of the present invention is a substrate cleaning method, comprising: preparing a substrate having a first surface and a second surface opposite to the first surface; and a cleaning plate having a liquid support surface; The first surface and the cleaning plate are disposed in a downward posture in which the first surface is directed downward, the cleaning plate is disposed in an upward posture in which the liquid support surface is directed upward, the substrate in the downward posture and the cleaning plate in the upward posture are disposed on the first surface and the liquid. A step of disposing a support surface at a working position facing a gap of a predetermined dimension, a step of supplying a cleaning liquid to a central region of a liquid support surface of a cleaning plate in an upward posture, and a cleaning plate in an upward posture A step of rotating about a cleaning plate axis defined by the cleaning plate as an axis substantially orthogonal to the liquid support surface in the central region, and a cleaning liquid flowing along the liquid support surface of the cleaning plate contacting the first surface of the substrate Cleaning the first surface of the substrate. Tsu and up, is a substrate cleaning method, including.

本発明の他の態様は、第１面及び第１面の反対側の第２面を有する基板の、第１面を洗浄する基板洗浄装置において、基板を、第１面が下方を向く下向き姿勢で支持できる基板支持部と、液体支持面を有する洗浄板であって、基板支持部に支持された基板の第１面に液体支持面が予め定めた寸法の隙間を介して対向できる作業位置に、液体支持面が上方を向く上向き姿勢で配置される洗浄板と、洗浄板の液体支持面の中央領域に洗浄液を供給する洗浄液供給部と、洗浄板を、中央領域にて液体支持面に略直交する軸線として洗浄板に定められる洗浄板軸線を中心に回転させる洗浄板駆動部とを具備し、洗浄液を基板の第１面に接触させて、基板の第１面を洗浄することができる、基板洗浄装置である。   According to another aspect of the present invention, there is provided a substrate cleaning apparatus for cleaning a first surface of a substrate having a first surface and a second surface opposite to the first surface, wherein the substrate has a downward posture with the first surface facing downward. A cleaning plate having a liquid support surface and a substrate support portion that can be supported at a work position where the liquid support surface can face the first surface of the substrate supported by the substrate support portion via a gap of a predetermined dimension. A cleaning plate arranged in an upward orientation with the liquid support surface facing upward, a cleaning liquid supply unit for supplying a cleaning liquid to the central region of the liquid support surface of the cleaning plate, and the cleaning plate substantially at the liquid support surface in the central region A cleaning plate driving section that rotates around a cleaning plate axis defined on the cleaning plate as an orthogonal axis, and the cleaning liquid can be brought into contact with the first surface of the substrate to clean the first surface of the substrate. A substrate cleaning apparatus.

本発明の一態様に係る基板洗浄方法によれば、基板をその第１面が下方を向く下向き姿勢にする一方、洗浄板をその液体支持面が上方を向く上向き姿勢にして、第１面と液体支持面とが所定の隙間を介して互いに対向する作業位置で、洗浄工程が実行される。   According to the substrate cleaning method of one aspect of the present invention, the substrate is placed in a downward posture in which the first surface faces downward, and the cleaning plate is placed in an upward posture in which the liquid support surface faces upward. The cleaning process is performed at a work position where the liquid support surface faces each other with a predetermined gap.

本発明の他の態様に係る基板洗浄装置によれば、基板支持部が、基板をその第１面が下方を向く下向き姿勢で支持する一方、洗浄板を、その液体支持面が上方を向く上向き姿勢で、かつ液体支持面が基板の第１面に対し所定の隙間を介して対向する作業位置に配置した状態で、洗浄工程が実行される。   According to the substrate cleaning apparatus of another aspect of the present invention, the substrate support unit supports the substrate in a downward posture in which the first surface is directed downward, while the cleaning plate is directed upward in which the liquid support surface is directed upward. The cleaning process is executed in a posture and in a state where the liquid support surface is disposed at a work position facing the first surface of the substrate with a predetermined gap.

したがって、本発明の上記いずれの態様によっても、洗浄板の回転に伴って生じる遠心力により液体支持面の中央領域から外方へ流れる洗浄液を、回転する液体支持面に追従させて回転方向へ移動させながら基板の第１面に満遍無く接触させることができ、その結果、洗浄液の、基板の第１面に接触する部分を継続して迅速に更新しながら、洗浄液により第１面を確実かつ効率的に洗浄することができる。しかも、本発明の上記いずれの態様も、上向き姿勢の洗浄板の液体支持面を洗浄液が流動する構成であるから、基板の第２面に別部材である支持体を貼付している場合であっても、洗浄液を支持体に接触しない位置に容易に配置できる。したがって、支持体を基板の第２面に貼付するために用いられる接着剤が、洗浄液により洗浄されて溶解することを、未然に防止できる。   Therefore, according to any of the above aspects of the present invention, the cleaning liquid that flows outward from the central region of the liquid support surface due to the centrifugal force generated with the rotation of the cleaning plate is caused to follow the rotating liquid support surface and move in the rotation direction. The first surface of the substrate can be brought into uniform contact with the first surface of the substrate, and as a result, the portion of the cleaning liquid that contacts the first surface of the substrate can be renewed continuously and rapidly while the first surface is reliably and It can be cleaned efficiently. In addition, any of the above aspects of the present invention has a configuration in which the cleaning liquid flows on the liquid support surface of the cleaning plate in the upward posture, and thus is a case where a support that is a separate member is attached to the second surface of the substrate. However, the cleaning liquid can be easily disposed at a position where it does not contact the support. Therefore, it is possible to prevent the adhesive used for attaching the support to the second surface of the substrate from being cleaned and dissolved by the cleaning liquid.

本発明の第１の実施形態による基板洗浄装置を模式図的に示す一部断面図である。1 is a partial cross-sectional view schematically showing a substrate cleaning apparatus according to a first embodiment of the present invention. 図１の基板洗浄装置の洗浄板ユニットを示す斜視図である。It is a perspective view which shows the washing | cleaning board unit of the board | substrate washing | cleaning apparatus of FIG. 本発明の実施形態による基板洗浄方法を適用可能な基板の斜視図である。1 is a perspective view of a substrate to which a substrate cleaning method according to an embodiment of the present invention can be applied. 図１の基板洗浄装置を用いた本発明の第１の実施形態による基板洗浄方法を示す図である。It is a figure which shows the board | substrate cleaning method by the 1st Embodiment of this invention using the board | substrate cleaning apparatus of FIG. 図４の基板洗浄方法における洗浄ステップを示す拡大断面図である。It is an expanded sectional view which shows the washing | cleaning step in the board | substrate cleaning method of FIG. 図４の洗浄ステップを模式図的に示す平面図である。It is a top view which shows typically the washing | cleaning step of FIG. （ａ）〜（ｇ）図１の基板洗浄装置で使用可能な種々の洗浄板を模式図的に示す平面図である。(A)-(g) It is a top view which shows typically the various washing | cleaning boards which can be used with the board | substrate washing | cleaning apparatus of FIG. 本発明の第２の実施形態による基板洗浄装置を模式図的に示す一部断面図である。It is a partial cross section figure which shows typically the board | substrate cleaning apparatus by the 2nd Embodiment of this invention. 図８の基板洗浄装置を用いた本発明の第２の実施形態による基板洗浄方法を示す図で、洗浄ステップを示す拡大断面図である。It is a figure which shows the board | substrate cleaning method by the 2nd Embodiment of this invention using the board | substrate cleaning apparatus of FIG. 8, and is an expanded sectional view which shows a washing | cleaning step.

以下、添付図面を参照して、本発明の実施の形態を詳細に説明する。全図面に渡り、対応する構成要素には共通の参照符号を付す。
図１及び図２は、本発明の第１の実施形態による基板洗浄装置１０を示す図、図３は、本発明の実施形態による基板洗浄方法を適用可能な基板１２を示す図、図４〜図６は、基板洗浄装置１０を用いた本発明の第１の実施形態による基板洗浄方法を示す図である。 Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. Corresponding components are denoted by common reference symbols throughout the drawings.
1 and 2 show a substrate cleaning apparatus 10 according to a first embodiment of the present invention, FIG. 3 shows a substrate 12 to which a substrate cleaning method according to an embodiment of the present invention can be applied, and FIGS. FIG. 6 is a diagram showing a substrate cleaning method using the substrate cleaning apparatus 10 according to the first embodiment of the present invention.

図示の基板洗浄方法及び基板洗浄装置１０は、第１面１２ａとその反対側の第２面１２ｂとを有する基板１２に対し、別部材である支持体１４を第２面１２ｂに貼付した状態で、第１面１２ａを例えば残留接着剤の除去の目的で洗浄するものであり、例として、半導体チップの作製工程におけるダイシング前のウエハ洗浄工程に適用できる。ダイシング前のウエハ洗浄工程の場合、基板（ウエハ）１２の第２面１２ｂに貼付される支持体１４は、後述する支持フィルム１４である。しかし、本発明の一態様に係る基板洗浄方法、及び本発明の他の態様に係る基板洗浄装置の用途は、これに限定されない。   The illustrated substrate cleaning method and substrate cleaning apparatus 10 are in a state in which a support 14 which is a separate member is attached to a second surface 12b on a substrate 12 having a first surface 12a and a second surface 12b opposite to the first surface 12a. The first surface 12a is cleaned, for example, for the purpose of removing the residual adhesive, and can be applied, for example, to a wafer cleaning process before dicing in a semiconductor chip manufacturing process. In the case of the wafer cleaning process before dicing, the support 14 attached to the second surface 12b of the substrate (wafer) 12 is a support film 14 described later. However, the use of the substrate cleaning method according to one aspect of the present invention and the substrate cleaning apparatus according to another aspect of the present invention is not limited thereto.

基板洗浄装置１０は、第２面１２ｂに支持体１４を貼付した基板１２を、第１面１２ａが重力方向下方を向く下向き姿勢で支持できる基板支持部１６を備える（図１、図４）。基板支持部１６は、支持体１４に接触する表面１８ａを有して基板１２及び支持体１４を表面１８ａに固定的に支持するテーブル１８と、テーブル１８の表面１８ａに基板１２及び支持体１４を解除可能に固定する固定機構２０とを備える。テーブル１８は、外力に抗して基板１２及び支持体１４を表面１８ａ上に安定して支持できかつ固定できるに十分な剛性を有する。テーブル１８は、例えば、表面１８ａが真空吸着面として作用する有孔体として構成される。テーブル１８の表面１８ａが真空吸着面として作用する構成では、固定機構２０は、テーブル１８の表面１８ａに連通する真空ポンプ等を含む真空装置から構成されて、真空作用によりテーブル表面１８ａに基板１２及び支持体１４を解除可能に固定する。また、基板１２や支持体１４等の支持対象物の素材によっては、固定機構２０を磁石装置から構成することもできる。なお、テーブル１８及び固定機構２０の構成は、特に限定されない。   The substrate cleaning apparatus 10 includes a substrate support unit 16 that can support the substrate 12 having the support 14 attached to the second surface 12b in a downward posture in which the first surface 12a faces downward in the gravitational direction (FIGS. 1 and 4). The substrate support portion 16 has a surface 18 a that contacts the support 14, a table 18 that supports the substrate 12 and the support 14 fixedly on the surface 18 a, and the substrate 12 and the support 14 on the surface 18 a of the table 18. And a fixing mechanism 20 for releasably fixing. The table 18 has sufficient rigidity to stably support and fix the substrate 12 and the support 14 on the surface 18a against external force. The table 18 is configured, for example, as a perforated body whose surface 18a acts as a vacuum suction surface. In the configuration in which the surface 18a of the table 18 acts as a vacuum suction surface, the fixing mechanism 20 includes a vacuum device including a vacuum pump or the like communicating with the surface 18a of the table 18, and the substrate 12 and the table surface 18a are attached to the table surface 18a by a vacuum action. The support 14 is fixed releasably. Further, depending on the material of the support object such as the substrate 12 or the support 14, the fixing mechanism 20 can be configured from a magnet device. In addition, the structure of the table 18 and the fixing mechanism 20 is not specifically limited.

基板洗浄装置１０は、液体支持面２２を有する洗浄板２４と、洗浄板２４の液体支持面２２の中央領域２２ａに洗浄液Ｌ（図５）を供給する洗浄液供給部２６と、洗浄板２４を、中央領域２２ａにて液体支持面２２に略直交する軸線として洗浄板２４に定められる洗浄板軸線２４ａを中心に回転させる洗浄板駆動部２８とを、さらに備える（図１、図２）。洗浄板２４は、基板支持部１６に支持された基板１２の第１面１２ａに液体支持面２２が予め定めた寸法の隙間Ｇを介して対向できる作業位置（図４）に、液体支持面２２が重力方向上方を向く上向き姿勢で配置される。洗浄板２４は、洗浄板駆動部２８による回転時に自己形状を保持して液体支持面２２に洗浄液Ｌを支持できる剛性を有する。洗浄板２４の液体支持面２２は、洗浄液Ｌを全体に円滑に行き渡らせる鏡面状の表面構造を有することができる。   The substrate cleaning apparatus 10 includes a cleaning plate 24 having a liquid support surface 22, a cleaning liquid supply unit 26 for supplying a cleaning liquid L (FIG. 5) to the central region 22a of the liquid support surface 22 of the cleaning plate 24, and a cleaning plate 24. A cleaning plate drive unit 28 that rotates around a cleaning plate axis 24a defined on the cleaning plate 24 as an axis substantially orthogonal to the liquid support surface 22 in the central region 22a is further provided (FIGS. 1 and 2). The cleaning plate 24 is disposed at a working position (FIG. 4) where the liquid support surface 22 can face the first surface 12a of the substrate 12 supported by the substrate support portion 16 via a gap G having a predetermined size. Are arranged in an upward posture facing upward in the direction of gravity. The cleaning plate 24 has rigidity capable of supporting the cleaning liquid L on the liquid support surface 22 while maintaining its own shape when rotated by the cleaning plate driving unit 28. The liquid support surface 22 of the cleaning plate 24 can have a mirror-like surface structure that allows the cleaning liquid L to be smoothly distributed throughout.

図示構成では、洗浄板２４は、液体支持面２２を有する板状の主部３０と、主部３０の中心に連結され、洗浄板軸線２４ａに沿って延びるとともに液体支持面２２の中央領域２２ａに開口する中空の軸部３２とを有する。洗浄板２４は、軸部３２に取り付けた軸受装置３４を介してハウジング３６に回転自在に支持される。ハウジング３６は、洗浄板２４の少なくとも主部３０を回転自在に収容する洗浄室３８を、内部に画定する。   In the illustrated configuration, the cleaning plate 24 is connected to the plate-shaped main portion 30 having the liquid support surface 22 and the center of the main portion 30, extends along the cleaning plate axis 24 a, and extends to the central region 22 a of the liquid support surface 22. And a hollow shaft portion 32 that opens. The cleaning plate 24 is rotatably supported by the housing 36 via a bearing device 34 attached to the shaft portion 32. The housing 36 internally defines a cleaning chamber 38 that rotatably accommodates at least the main portion 30 of the cleaning plate 24.

洗浄液供給部２６は、洗浄液供給源４０と、洗浄液供給源４０から供給された洗浄液Ｌを洗浄板２４の液体支持面２２の中央領域２２ａに向けて放出するノズル４２とを有する。図示構成では、洗浄液供給源４０とノズル４２とを相互に接続して洗浄液Ｌを流通させる液管４４が、洗浄板２４の中空の軸部３２に収容される。また図示構成では、液体支持面２２の中央領域２２ａにおける軸部３２の開口部に、中央領域２２ａに供給される洗浄液Ｌを一時的に受け止めることができる肩面４６が形成され、ノズル４２が、液管４４の末端で肩面４６に向けて洗浄液Ｌを放出するようになっている。   The cleaning liquid supply unit 26 includes a cleaning liquid supply source 40 and a nozzle 42 that discharges the cleaning liquid L supplied from the cleaning liquid supply source 40 toward the central region 22 a of the liquid support surface 22 of the cleaning plate 24. In the illustrated configuration, a liquid pipe 44 through which the cleaning liquid supply source 40 and the nozzle 42 are connected to each other to flow the cleaning liquid L is accommodated in the hollow shaft portion 32 of the cleaning plate 24. In the illustrated configuration, a shoulder surface 46 capable of temporarily receiving the cleaning liquid L supplied to the central region 22a is formed at the opening of the shaft portion 32 in the central region 22a of the liquid support surface 22, and the nozzle 42 is The cleaning liquid L is discharged toward the shoulder surface 46 at the end of the liquid pipe 44.

洗浄板駆動部２８は、ハウジング３６に固定して支持されるエアモータ等の原動機４８と、原動機４８の回転出力を洗浄板２４の軸部３２に伝達するベルト／プーリ等の動力伝達機構５０とを備える。洗浄板駆動部２８は、洗浄板２４を前述した作業位置に配置した状態で、基板支持部１６に支持された基板１２の第１面１２ａと洗浄板２４の液体支持面２２との間の隙間Ｇを安定して維持しながら、洗浄板軸線２４ａを中心に洗浄板２４を回転させることができる。図示構成では、洗浄板２４と洗浄板駆動部２８とが、いずれもハウジング３６に支持されることで、洗浄板２４を前述した作業位置に配置可能な洗浄板ユニット５２を構成している（図２）。   The cleaning plate drive unit 28 includes a prime mover 48 such as an air motor that is fixedly supported by the housing 36, and a power transmission mechanism 50 such as a belt / pulley that transmits the rotation output of the prime mover 48 to the shaft portion 32 of the cleaning plate 24. Prepare. The cleaning plate driving unit 28 has a gap between the first surface 12a of the substrate 12 supported by the substrate support unit 16 and the liquid support surface 22 of the cleaning plate 24 in a state where the cleaning plate 24 is disposed at the above-described working position. The cleaning plate 24 can be rotated around the cleaning plate axis 24a while maintaining G stably. In the illustrated configuration, the cleaning plate 24 and the cleaning plate driving unit 28 are both supported by the housing 36, thereby forming a cleaning plate unit 52 that can place the cleaning plate 24 at the aforementioned working position (see FIG. 2).

基板支持部１６、洗浄板２４、洗浄液供給部２６及び洗浄板駆動部２８を備えた基板洗浄装置１０は、洗浄板軸線２４ａを中心に回転する洗浄板２４の液体支持面２２に沿って流動する洗浄液Ｌを、基板支持部１６が支持した基板１２の第１面１２ａに接触させることで、液体支持面２２と基板１２の第１面１２ａとを非接触状態に維持しながら、基板１２の第１面１２ａを洗浄することができる（図４）。この洗浄工程は、基板支持部１６が、基板１２をその第１面１２ａが重力方向下方を向く下向き姿勢で支持する一方、洗浄板２４を、その液体支持面２２が重力方向上方を向く上向き姿勢で、かつ液体支持面２２が基板１２の第１面１２ａに対し隙間Ｇを介して対向する作業位置に配置した状態で、実行される。したがって、洗浄板２４の回転に伴って生じる遠心力により液体支持面２２の中央領域２２ａから外方へ流れる洗浄液Ｌを、回転する液体支持面２２に追従させて回転方向へ移動させながら基板１２の第１面１２ａに満遍無く接触させることができ、その結果、洗浄液Ｌの、基板第１面１２ａに接触する部分を継続して迅速に更新しながら、洗浄液Ｌにより基板１２の第１面１２ａを確実かつ効率的に洗浄することができる。しかも、上向き姿勢の洗浄板２４の液体支持面２２を洗浄液Ｌが流動する構成であるから、洗浄液Ｌを、基板１２の第２面１２ｂに貼付した支持体１４に接触しない位置に容易に配置できる。したがって、支持体１４を基板第２面１２ｂに貼付するために用いられる接着剤が、洗浄液Ｌにより洗浄されて溶解することを、未然に防止できる。   The substrate cleaning apparatus 10 including the substrate support unit 16, the cleaning plate 24, the cleaning liquid supply unit 26, and the cleaning plate drive unit 28 flows along the liquid support surface 22 of the cleaning plate 24 that rotates about the cleaning plate axis 24a. By bringing the cleaning liquid L into contact with the first surface 12a of the substrate 12 supported by the substrate support portion 16, the liquid support surface 22 and the first surface 12a of the substrate 12 are maintained in a non-contact state, and the first One surface 12a can be cleaned (FIG. 4). In this cleaning step, the substrate support unit 16 supports the substrate 12 in a downward posture in which the first surface 12a faces downward in the gravitational direction, while the cleaning plate 24 supports an upward posture in which the liquid support surface 22 faces upward in the gravitational direction. In addition, the process is executed in a state where the liquid support surface 22 is disposed at a work position facing the first surface 12a of the substrate 12 via the gap G. Accordingly, the cleaning liquid L that flows outward from the central region 22a of the liquid support surface 22 by the centrifugal force generated with the rotation of the cleaning plate 24 follows the rotating liquid support surface 22 and moves in the rotational direction while moving the substrate 12. The first surface 12a can be uniformly contacted, and as a result, the first surface 12a of the substrate 12 is cleaned by the cleaning liquid L while the portion of the cleaning liquid L that contacts the first surface 12a is continuously and rapidly updated. Can be reliably and efficiently cleaned. In addition, since the cleaning liquid L flows on the liquid support surface 22 of the cleaning plate 24 in the upward orientation, the cleaning liquid L can be easily disposed at a position where it does not contact the support 14 attached to the second surface 12b of the substrate 12. . Therefore, it is possible to prevent the adhesive used for attaching the support 14 to the second substrate surface 12b from being cleaned and dissolved by the cleaning liquid L.

基板洗浄装置１０を用いた本発明の第１の実施形態による基板洗浄方法は、上記したように、第１面１２ａ及び第２面１２ｂを有する基板１２と、液体支持面２２を有する洗浄板２４とを用意するステップと、基板１２を、第１面１２ａが重力方向下方を向く下向き姿勢にするステップと、洗浄板２４を、液体支持面２２が重力方向上方を向く上向き姿勢にするステップと、下向き姿勢の基板１２と上向き姿勢の洗浄板２４とを、第１面１２ａと液体支持面２２とが予め定めた寸法の隙間Ｇを介して互いに対向する作業位置に配置するステップと、上向き姿勢の洗浄板２４の液体支持面２２の中央領域２２ａに洗浄液Ｌを供給するステップと、上向き姿勢の洗浄板２４を、中央領域２２ａにて液体支持面２２に略直交する軸線として洗浄板２４に定められる洗浄板軸線２４ａを中心に回転させるステップと、作業位置で、洗浄板軸線２４ａを中心に回転する洗浄板２４の液体支持面２２に沿って流動する洗浄液Ｌを基板１２の第１面１２ａに接触させて、基板１２の第１面１２ａを洗浄するステップとを有する。   As described above, the substrate cleaning method using the substrate cleaning apparatus 10 according to the first embodiment of the present invention includes the substrate 12 having the first surface 12a and the second surface 12b, and the cleaning plate 24 having the liquid support surface 22. Preparing the substrate 12 with the first surface 12a in a downward posture in which the first surface 12a faces downward in the direction of gravity, and setting the cleaning plate 24 in an upward posture in which the liquid support surface 22 faces in the upper direction of gravity; Arranging the substrate 12 in the downward posture and the cleaning plate 24 in the upward posture at work positions where the first surface 12a and the liquid support surface 22 face each other with a gap G having a predetermined dimension; The step of supplying the cleaning liquid L to the central region 22a of the liquid support surface 22 of the cleaning plate 24, and the cleaning plate 24 in the upward orientation as the axis substantially orthogonal to the liquid support surface 22 in the central region 22a. The step of rotating the cleaning plate axis 24a as defined in FIG. 2 and the cleaning liquid L flowing along the liquid support surface 22 of the cleaning plate 24 rotating around the cleaning plate axis 24a at the working position. Cleaning the first surface 12a of the substrate 12 in contact with 12a.

上記した基板洗浄方法では、基板１２の第１面１２ａを洗浄する際に、洗浄液Ｌを第１面１２ａに接触させた状態で、基板支持部１６が支持した基板１２の第１面１２ａと洗浄板２４の液体支持面２２とを、洗浄板軸線２４ａを中心とする洗浄板２４の回転方向以外の方向へ相対的に移動させることができる。この相対移動を実施するべく、基板洗浄装置１０は、洗浄板２４と基板支持部１６に支持された基板１２とを、第１面１２ａに略直交する軸線としてテーブル１８上で基板１２に定められる基板軸線１２ｃを中心に、相対的に回転させる回転駆動部５４をさらに備えている。図示構成では、回転駆動部５４は、基板軸線１２ｃを中心にテーブル１８を回転させるテーブル駆動部（図示しない原動機及び動力伝達機構を含む）として構成される。そして、上記基板洗浄方法における洗浄ステップは、洗浄液Ｌを第１面１２ａに接触させた状態で、基板軸線１２ｃを中心に、基板１２と洗浄板２４とを相対的に回転させるステップを含むものとなる。   In the substrate cleaning method described above, when the first surface 12a of the substrate 12 is cleaned, the cleaning liquid L is in contact with the first surface 12a and the first surface 12a of the substrate 12 supported by the substrate support 16 is cleaned. The liquid support surface 22 of the plate 24 can be relatively moved in a direction other than the rotation direction of the cleaning plate 24 around the cleaning plate axis 24a. In order to perform this relative movement, the substrate cleaning apparatus 10 determines the cleaning plate 24 and the substrate 12 supported by the substrate support 16 on the table 12 on the table 18 as an axis substantially orthogonal to the first surface 12a. A rotation drive unit 54 that relatively rotates about the substrate axis 12c is further provided. In the illustrated configuration, the rotation driving unit 54 is configured as a table driving unit (including a motor and a power transmission mechanism (not shown)) that rotates the table 18 around the substrate axis 12c. The cleaning step in the substrate cleaning method includes a step of relatively rotating the substrate 12 and the cleaning plate 24 around the substrate axis 12c with the cleaning liquid L in contact with the first surface 12a. Become.

回転駆動部５４を備えることにより、液体支持面２２に支持されている洗浄液Ｌと基板１２の第１面１２ａとの接触時の相対移動速度を容易に増加させることができ、また、第１面１２ａよりも小さな液体支持面２２を用いて第１面１２ａを洗浄できる。その結果、洗浄液Ｌによる洗浄効率を向上させることができる。なお、回転駆動部５４を、基板軸線１２ｃを中心にテーブル１８を回転させるテーブル駆動部として構成する代りに、又はそれに加えて、基板軸線１２ｃを中心に洗浄板ユニット５２を回転させる洗浄板ユニット駆動部として構成することもできる。また、基板支持部１６が支持した基板１２の第１面１２ａと洗浄板２４の液体支持面２２とを、基板軸線１２ｃを中心とする回転以外の動作（例えば直線往復動作）で相対的に移動させることもできる。しかし、機械構成及び制御構成の両観点で、回転駆動部５４を備えることが有利である。   By providing the rotation drive unit 54, the relative movement speed at the time of contact between the cleaning liquid L supported on the liquid support surface 22 and the first surface 12a of the substrate 12 can be easily increased. The first surface 12a can be cleaned using a liquid support surface 22 smaller than 12a. As a result, the cleaning efficiency with the cleaning liquid L can be improved. Instead of or in addition to configuring the rotation drive unit 54 as a table drive unit that rotates the table 18 about the substrate axis 12c, a cleaning plate unit drive that rotates the cleaning plate unit 52 about the substrate axis 12c. It can also be configured as a part. In addition, the first surface 12a of the substrate 12 supported by the substrate support unit 16 and the liquid support surface 22 of the cleaning plate 24 are relatively moved by an operation other than rotation about the substrate axis 12c (for example, a linear reciprocating operation). It can also be made. However, it is advantageous to provide the rotation drive unit 54 from both the machine configuration and control configuration viewpoints.

上記した基板洗浄方法では、下向き姿勢の基板１２と上向き姿勢の洗浄板２４とを作業位置に配置する際に、基板１２と洗浄板２４とを予め定めた作業位置に精度良く迅速に位置決めすることができる。この位置決めを実施するべく、基板洗浄装置１０は、洗浄板２４と基板１２を支持するテーブル１８とを、液体支持面２２と基板１２の第１面１２ａとが対向しない待機位置と、液体支持面２２と基板１２の第１面１２ａとが略一様な隙間Ｇを介して略平行に対向する作業位置との間で、相対的に移動させるとともに、作業位置に位置決めする位置決め駆動部５６をさらに備える。図示構成では、位置決め駆動部５６は、テーブル１８を待機位置と作業位置との間で移動させるテーブル駆動機構（図示しない原動機及び動力伝達機構を含む）として構成される。位置決め駆動部５６を備えることにより、待機位置で、基板支持部１６に基板１２を支持させた後、基板１２と洗浄板２４とを作業位置に精度良く迅速に位置決めして配置することができる。また、基板洗浄後、待機位置で基板１２を基板支持部１６から容易に脱離することができる。   In the above substrate cleaning method, when the substrate 12 in the downward posture and the cleaning plate 24 in the upward posture are arranged at the work position, the substrate 12 and the cleaning plate 24 are quickly and accurately positioned at a predetermined work position. Can do. In order to perform this positioning, the substrate cleaning apparatus 10 sets the cleaning plate 24 and the table 18 supporting the substrate 12 to a standby position where the liquid support surface 22 and the first surface 12a of the substrate 12 do not face each other, and the liquid support surface. A positioning drive unit 56 that relatively moves between the work position 22 and the first surface 12a of the substrate 12 facing each other through a substantially uniform gap G, and is positioned at the work position. Prepare. In the illustrated configuration, the positioning drive unit 56 is configured as a table drive mechanism (including a prime mover and a power transmission mechanism not shown) that moves the table 18 between the standby position and the work position. By providing the positioning drive unit 56, after the substrate support unit 16 supports the substrate 12 at the standby position, the substrate 12 and the cleaning plate 24 can be quickly and accurately positioned at the work position. In addition, the substrate 12 can be easily detached from the substrate support 16 at the standby position after cleaning the substrate.

上記した基板洗浄方法を適用可能な一例としての基板１２は、図３に示すように、基板軸線１２ｃを中心とする円形面からなる第１面１２ａ及び第２面１２ｂを有する円板状部材である。基板１２の第１面１２ａ及び第２面１２ｂは、いずれも略平坦面であって、互いに略平行に配置される。基板１２の第２面１２ｂには、第２面１２ｂよりも大きな表面１４ａを有する円板状の支持体１４が、図示しない接着剤を用いて貼付される。基板１２が、半導体チップの母材となるウエハである場合、支持体１４は、裏面研削したウエハのダイシングに際し、ウエハの裏面（第２面１２ｂ）に保護及び支持のために貼付される可撓性を有する支持フィルムである。この場合、支持体（支持フィルム）１４の外周縁に沿って配置可能な環状の形状及び寸法を有するとともに、支持体（支持フィルム）１４よりも高い剛性を有するフレーム部材５８が、図示しない接着剤等の接合手段を用いて支持体（支持フィルム）１４に固定される。   As shown in FIG. 3, the substrate 12 as an example to which the above-described substrate cleaning method can be applied is a disk-shaped member having a first surface 12a and a second surface 12b that are circular surfaces centering on the substrate axis 12c. is there. The first surface 12a and the second surface 12b of the substrate 12 are both substantially flat surfaces and are disposed substantially parallel to each other. A disc-shaped support 14 having a surface 14a larger than the second surface 12b is attached to the second surface 12b of the substrate 12 using an adhesive (not shown). When the substrate 12 is a wafer that is a base material of a semiconductor chip, the support 14 is a flexible member that is attached to the back surface (second surface 12b) of the wafer for protection and support when dicing the back-ground wafer. It is the support film which has property. In this case, the frame member 58 has an annular shape and dimensions that can be arranged along the outer peripheral edge of the support (support film) 14 and has higher rigidity than the support (support film) 14. It fixes to the support body (support film) 14 using joining means, such as.

基板１２は、例えば、シリコン、ガリウムヒ素、水晶、サファイヤ、ガラス等からなるウエハや他の基板であることができる。基板１２が円板状の形状を有する場合、基板１２の直径は、例えば約５０ｍｍ〜約５００ｍｍであることができる。基板１２がウエハである場合、第１面１２ａは、所要の回路パターンが形成された回路面である。ウエハの厚みは、例えば約０．５ｍｍ〜約１ｍｍ程度であり、直径と共に標準化されている。また、裏面研削後の半導体チップの厚みは、例えば約５０μｍ〜約１００μｍである。なお、基板１２の素材、形状、寸法等は特に限定されない。   The substrate 12 can be, for example, a wafer made of silicon, gallium arsenide, crystal, sapphire, glass, or another substrate. When the substrate 12 has a disk shape, the diameter of the substrate 12 may be about 50 mm to about 500 mm, for example. When the substrate 12 is a wafer, the first surface 12a is a circuit surface on which a required circuit pattern is formed. The thickness of the wafer is, for example, about 0.5 mm to about 1 mm, and is standardized with the diameter. Moreover, the thickness of the semiconductor chip after back grinding is, for example, about 50 μm to about 100 μm. The material, shape, dimensions, etc. of the substrate 12 are not particularly limited.

支持体（支持フィルム）１４は、柔軟な膜状要素であり、例えば、樹脂等から全体に一様な厚みに作製される。支持体（支持フィルム）１４は、基板（ウエハ）１２のダイシングに際して、所望の接着剤により基板（ウエハ）１２の第２面（裏面）１２ｂに固着されることで第２面１２ｂを保護及び支持することができる。この接着剤として放射線硬化型の接着剤を使用する場合には、支持体（支持フィルム）１４は十分な放射線透過性を有することが望ましく、例えば、ポリエチレンテレフタレート等のポリエステル、ポリプロピレン等のポリオレフィン樹脂、ポリ塩化ビニル樹脂、ポリビ塩化ビニリデン樹脂、ポリアミド樹脂等からなるポリマーフィルムであることができる。また、一態様として支持体（支持フィルム）１４は、基板（ウエハ）１２の第２面（裏面）１２ｂを、ダイシングの間、汚損しないように保護し得る物性を有することが望ましい。この場合、支持体（支持フィルム）１４の厚みは、例えば約５μｍ〜約２００μｍである。なお、図示の支持体（支持フィルム）１４は、基板１２の円板形状に相似する円形の形状（基板軸線１２ｃを共有する）を備えているが、基板１２の第２面１２ｂよりも大きな表面１４ａを有する点を除いて、支持体１４の素材、形状、寸法等は特に限定されない。   The support body (support film) 14 is a flexible film-like element, and is made of a resin or the like with a uniform thickness as a whole. When the substrate (wafer) 12 is diced, the support (support film) 14 is fixed to the second surface (back surface) 12b of the substrate (wafer) 12 with a desired adhesive to protect and support the second surface 12b. can do. When a radiation curable adhesive is used as the adhesive, it is desirable that the support (support film) 14 has sufficient radiation transparency. For example, polyester such as polyethylene terephthalate, polyolefin resin such as polypropylene, It can be a polymer film made of polyvinyl chloride resin, polyvinylidene chloride resin, polyamide resin or the like. Moreover, as one aspect, it is desirable that the support (support film) 14 has physical properties capable of protecting the second surface (back surface) 12b of the substrate (wafer) 12 so as not to be contaminated during dicing. In this case, the thickness of the support (support film) 14 is, for example, about 5 μm to about 200 μm. The illustrated support body (support film) 14 has a circular shape similar to the disk shape of the substrate 12 (which shares the substrate axis 12c), but has a larger surface than the second surface 12b of the substrate 12. Except for the point having 14a, the material, shape, dimensions, etc. of the support 14 are not particularly limited.

基板（ウエハ）１２の第２面（裏面）１２ｂに支持体（支持フィルム）１４を貼付するために用いられる接着剤は、硬化又は固化することで基板１２の第２面１２ｂに支持体１４の表面１４ａを強固に固定した状態に保持する接着力を発揮できるものであって、例えば、硬化性接着剤、溶剤系接着剤、ホットメルト型接着剤を含む熱可塑性樹脂、水分散型接着剤等であることができる。ここで、硬化性接着剤は、熱や紫外線等のエネルギー線によって硬化される液状接着剤であり、溶剤系接着剤は、溶剤の蒸発により固化する液状接着剤であり、ホットメルト型接着剤は、加熱により溶融し、冷却により固化される接着剤である。また、水分散型接着剤は水中に接着剤成分が分散したものであって、水の蒸発により、固化する接着剤である。硬化性接着剤としては、エポキシ、ウレタンをベースとする一液熱硬化型接着剤、エポキシ、ウレタン、アクリルをベースとする二液混合反応型接着剤、アクリル、エポキシをベースとする紫外線硬化型、電子線硬化型接着剤が挙げられる。また、溶剤系接着剤としては、ゴム、エラストマー等を溶剤に溶解したゴム系接着剤が挙げられる。なお本願では、狭義の硬化及び固化を「固化」と総称する。   The adhesive used to attach the support (support film) 14 to the second surface (back surface) 12b of the substrate (wafer) 12 is hardened or solidified to cure the support 14 on the second surface 12b of the substrate 12. Adhesive force that holds the surface 14a firmly fixed can be exhibited. For example, a curable adhesive, a solvent-based adhesive, a thermoplastic resin including a hot-melt adhesive, a water-dispersed adhesive, etc. Can be. Here, the curable adhesive is a liquid adhesive that is cured by energy rays such as heat and ultraviolet rays, the solvent-based adhesive is a liquid adhesive that is solidified by evaporation of the solvent, and the hot-melt adhesive is An adhesive that melts by heating and solidifies by cooling. The water-dispersed adhesive is an adhesive in which an adhesive component is dispersed in water and is solidified by evaporation of water. As curable adhesive, one-component thermosetting adhesive based on epoxy, urethane, two-component mixed reaction adhesive based on epoxy, urethane, acrylic, UV curable type based on acrylic, epoxy, An electron beam curable adhesive is mentioned. Examples of the solvent-based adhesive include a rubber-based adhesive in which rubber, elastomer or the like is dissolved in a solvent. In the present application, curing and solidification in a narrow sense are collectively referred to as “solidification”.

基板１２がウエハである場合、上記した接着剤は、ウエハの裏面研削工程に際して回路面（第１面１２ａ）に保護及び支持用の支持板を貼付するために用いられる接着剤と同様のものであることができる。ダイシングに際しては、薄肉化したウエハの裏面に保護及び支持用の支持フィルム（支持体１４）を貼付する一方、ウエハの回路面から支持板を剥離して、露出した回路面を切削する。ここで、支持板を剥離したウエハの回路面に、支持板を貼付するために用いられていた接着剤が残留する場合があるので、ダイシングを実施する前に、必要に応じて回路面を洗浄する。この回路面の洗浄工程に、本発明の実施形態による基板洗浄装置１０及び基板洗浄方法を適用することができる。   When the substrate 12 is a wafer, the above-described adhesive is the same as the adhesive used for attaching a protective and supporting support plate to the circuit surface (first surface 12a) in the wafer back grinding process. Can be. When dicing, a protective film (support 14) for protection and support is attached to the back surface of the thinned wafer, while the support plate is peeled off from the circuit surface of the wafer to cut the exposed circuit surface. Here, the adhesive used to attach the support plate may remain on the circuit surface of the wafer from which the support plate has been peeled off, so the circuit surface is cleaned as necessary before dicing. To do. The substrate cleaning apparatus 10 and the substrate cleaning method according to the embodiment of the present invention can be applied to this circuit surface cleaning process.

フレーム部材５８は、例えば、金属、樹脂等から全体に一様な厚みに作製される。フレーム部材５８は、支持体１４の外周縁に沿って表面１４ａに固定されることで、フレーム部材５８の内側に位置する支持体１４の中央領域を伸展した状態に維持できるに十分な剛性を有する。フレーム部材５８の剛性は、素材、寸法、形状等によって設定できるが、例えば支持体１４に何らかの張力が加わったときにもフレーム部材５８自体に顕著な撓みや変形が生じない程度の剛性であればよい。例えば、フレーム部材５８がステンレス鋼製の円環状のものである場合、厚みが約１ｍｍ〜約２ｍｍ程度、内径が約３５０ｍｍ程度、外径が約４００ｍｍ程度の寸法を有することが、特に直径３０ｍｍのシリコンウエハ用として適当である。なお、図示のフレーム部材５８は、基板１２の円板形状に相似する円環状の形状（基板軸線１２ｃを共有する）を備えているが、支持体１４の外周縁に沿って配置可能な形状及び寸法を有する点、及び支持体１４よりも高い剛性を有する点を除いて、フレーム部材５８の素材、形状、寸法等は特に限定されない。フレーム部材５８は、支持体１４と同一の素材から形成されてもよい。   The frame member 58 is made, for example, from metal, resin, etc., with a uniform thickness throughout. Since the frame member 58 is fixed to the surface 14a along the outer peripheral edge of the support member 14, the frame member 58 has sufficient rigidity to maintain the central region of the support member 14 located inside the frame member 58 in an extended state. . The rigidity of the frame member 58 can be set depending on the material, size, shape, etc. For example, as long as the frame member 58 is not rigidly deformed or deformed even when some tension is applied to the support 14, for example. Good. For example, when the frame member 58 is an annular ring made of stainless steel, the thickness is about 1 mm to about 2 mm, the inner diameter is about 350 mm, and the outer diameter is about 400 mm. Suitable for silicon wafers. Although the illustrated frame member 58 has an annular shape similar to the disk shape of the substrate 12 (which shares the substrate axis 12c), a shape that can be arranged along the outer peripheral edge of the support 14 and The material, shape, dimensions, and the like of the frame member 58 are not particularly limited, except for having a dimension and having a higher rigidity than the support 14. The frame member 58 may be formed from the same material as the support 14.

上記した一例としての基板１２の第１面１２ａを洗浄するのに用いられる基板洗浄装置１０の具体的態様の構成を、図１〜図６を参照してさらに詳細に説明する。
基板支持部１６のテーブル１８は、基板１２及び支持体１４の円板形状に相似する略平坦な円形の表面１８ａを有して、支持体１４の全体を表面１８ａに支持することができる。固定機構２０は、真空作用によりテーブル１８の表面１８ａに基板１２及び支持体１４を解除可能に固定する前述した真空装置から構成できる。支持体１４の外周縁に沿って固定したフレーム部材５８が金属製の場合は、固定機構２０を磁石装置から構成することもできる。 The configuration of a specific mode of the substrate cleaning apparatus 10 used for cleaning the first surface 12a of the substrate 12 as an example will be described in more detail with reference to FIGS.
The table 18 of the substrate support unit 16 has a substantially flat circular surface 18a similar to the disk shape of the substrate 12 and the support 14, and the entire support 14 can be supported by the surface 18a. The fixing mechanism 20 can be composed of the above-described vacuum apparatus that releasably fixes the substrate 12 and the support 14 to the surface 18a of the table 18 by a vacuum action. When the frame member 58 fixed along the outer peripheral edge of the support 14 is made of metal, the fixing mechanism 20 can also be configured from a magnet device.

洗浄板２４の液体支持面２２は、洗浄板軸線２４ａを中心とする円形面であることができる（図２）。この場合、液体支持面２２の直径は、基板１２の第１面１２ａの直径以下かつ半径以上に設定される。液体支持面２２の直径が第１面１２ａの直径よりも小さい場合、作業位置は、基板軸線１２ｃと洗浄板軸線２４ａとが互いに略平行にずれて配置される位置である（図４）。   The liquid support surface 22 of the cleaning plate 24 can be a circular surface centered on the cleaning plate axis 24a (FIG. 2). In this case, the diameter of the liquid support surface 22 is set to be equal to or smaller than the diameter of the first surface 12 a of the substrate 12 and larger than the radius. When the diameter of the liquid support surface 22 is smaller than the diameter of the first surface 12a, the working position is a position where the substrate axis 12c and the cleaning plate axis 24a are arranged so as to be substantially parallel to each other (FIG. 4).

洗浄板２４の液体支持面２２は、略平坦な凹面部分６０と、凹面部分６０に隣接する凸面部分６２とを有することができる（図１、図２）。凸面部分６２は、全体として略平坦であり、凹面部分６０から洗浄板軸線２４ａに沿った方向へ突出して位置する。凹面部分６０を基準とする凸面部分６２の突出高さは、例えば約１ｍｍ〜約２ｍｍである。この構成では、作業位置において基板支持部１６に支持された基板１２の第１面１２ａと洗浄板２４の液体支持面２２との間に形成される隙間Ｇは、基板１２の第１面１２ａと液体支持面２２の凸面部分６２との間に形成されることになる。隙間Ｇは、例えば約０．１ｍｍ〜約０．５ｍｍである。そして洗浄板２４は、洗浄板駆動部２８の駆動により洗浄板軸線２４ａを中心に回転する間に、隙間Ｇを安定して維持しながら、凹面部分６０を流動する洗浄液Ｌを基板１２の第１面１２ａに接触させることなく、凸面部分６２を流動する洗浄液Ｌを基板１２の第１面１２ａに接触させることができる（図５）。   The liquid support surface 22 of the cleaning plate 24 can have a substantially flat concave portion 60 and a convex portion 62 adjacent to the concave portion 60 (FIGS. 1 and 2). The convex portion 62 is substantially flat as a whole, and is located so as to protrude from the concave portion 60 in the direction along the cleaning plate axis 24a. The protruding height of the convex surface portion 62 with respect to the concave surface portion 60 is, for example, about 1 mm to about 2 mm. In this configuration, the gap G formed between the first surface 12a of the substrate 12 supported by the substrate support 16 at the work position and the liquid support surface 22 of the cleaning plate 24 is separated from the first surface 12a of the substrate 12. It is formed between the convex portion 62 of the liquid support surface 22. The gap G is, for example, about 0.1 mm to about 0.5 mm. Then, while the cleaning plate 24 rotates around the cleaning plate axis 24 a by driving the cleaning plate driving unit 28, the cleaning liquid L flowing in the concave portion 60 is supplied to the first of the substrate 12 while the gap G is stably maintained. The cleaning liquid L flowing through the convex portion 62 can be brought into contact with the first surface 12a of the substrate 12 without being brought into contact with the surface 12a (FIG. 5).

洗浄板２４の液体支持面２２の凸面部分６２は、洗浄板軸線２４ａを中心とし、かつ直径が基板１２の第１面１２ａの半径に略等しい仮想円周Ｐの、少なくとも一部分を含む領域に形成される（図６）。図示構成では、凸面部分６２は、仮想円周Ｐの全体を含む領域に形成される円環状部分であり、円形の液体支持面２２の外周縁に沿って配置されて、凹面部分６０の全体を囲繞する（図２）。この場合、作業位置は、基板軸線１２ｃと洗浄板軸線２４ａとが、基板１２の第１面１２ａの半径の略半分の距離だけ互いに略平行にずれて配置される位置になる（図４、図６）。   The convex portion 62 of the liquid support surface 22 of the cleaning plate 24 is formed in a region including at least a part of a virtual circumference P that is centered on the cleaning plate axis 24a and whose diameter is substantially equal to the radius of the first surface 12a of the substrate 12. (FIG. 6). In the illustrated configuration, the convex surface portion 62 is an annular portion formed in a region including the entire virtual circumference P, and is disposed along the outer peripheral edge of the circular liquid support surface 22 so that the entire concave surface portion 60 is formed. Go (Figure 2). In this case, the working position is a position where the substrate axis 12c and the cleaning plate axis 24a are arranged so as to be substantially parallel to each other by a distance that is approximately half the radius of the first surface 12a of the substrate 12 (FIGS. 4 and 4). 6).

洗浄板２４の軸部３２は、中空円筒形状を有し、液体支持面２２の中央領域２２ａに設けられる肩面４６は、軸部３２の円筒状内周面と液体支持面２２との間に円滑に延びる円錐台形状を有することができる（図１、図２）。この場合、洗浄液供給部２６のノズル４２は、その洗浄液放出口が洗浄板２４の肩面４６に対向する位置に配置される。   The shaft portion 32 of the cleaning plate 24 has a hollow cylindrical shape, and the shoulder surface 46 provided in the central region 22 a of the liquid support surface 22 is between the cylindrical inner peripheral surface of the shaft portion 32 and the liquid support surface 22. It can have a truncated cone shape that extends smoothly (FIGS. 1 and 2). In this case, the nozzle 42 of the cleaning liquid supply unit 26 is disposed at a position where the cleaning liquid discharge port faces the shoulder surface 46 of the cleaning plate 24.

洗浄板ユニット５２のハウジング３６は、内部に洗浄室３８を画定する円筒状の外壁６４を備えることができる（図１、図２）。また、洗浄室３８が開口する外壁６４の軸線方向上端には、洗浄室３８に収容した洗浄板２４の主部３０に向かって内方へ張り出す環状フランジ部分６６を形成できる。外壁６４及び環状フランジ部分６６は、洗浄板軸線２４ａを中心に回転する洗浄板２４の液体支持面２２に沿って流動して洗浄板２４の外方へ飛散する洗浄液Ｌを、洗浄板２４の外側で回収する洗浄液回収部として機能する（図５）。この構成では、ハウジング３６に、外壁６４及び環状フランジ部分６６によって回収された洗浄液Ｌを図示しない洗浄液貯留部に向けて排出する排出口６８を設けることができる（図１）。   The housing 36 of the cleaning plate unit 52 can include a cylindrical outer wall 64 that defines a cleaning chamber 38 therein (FIGS. 1 and 2). Further, an annular flange portion 66 projecting inward toward the main portion 30 of the cleaning plate 24 accommodated in the cleaning chamber 38 can be formed at the upper end in the axial direction of the outer wall 64 where the cleaning chamber 38 opens. The outer wall 64 and the annular flange portion 66 flow the cleaning liquid L that flows along the liquid support surface 22 of the cleaning plate 24 rotating about the cleaning plate axis 24 a and scatters outward of the cleaning plate 24. It functions as a cleaning liquid recovery unit that recovers at (FIG. 5). In this configuration, the housing 36 can be provided with a discharge port 68 for discharging the cleaning liquid L collected by the outer wall 64 and the annular flange portion 66 toward a cleaning liquid storage unit (not shown) (FIG. 1).

洗浄板ユニット５２は、洗浄室３８を陰圧にする排気部７０を備えることができる（図１）。排気部７０は、洗浄板２４の液体支持面２２に供給された洗浄液Ｌの蒸気を洗浄室３８から吸引して、例えば図示しない濾過装置に向けて排気するように構成できる。排気部７０を備えることにより、洗浄工程中に洗浄液Ｌの蒸気がハウジング３６の外部に流出して拡散することを防止できる。   The cleaning plate unit 52 may include an exhaust unit 70 that makes the cleaning chamber 38 have a negative pressure (FIG. 1). The exhaust unit 70 can be configured to suck the vapor of the cleaning liquid L supplied to the liquid support surface 22 of the cleaning plate 24 from the cleaning chamber 38 and exhaust it toward, for example, a filtration device (not shown). By providing the exhaust part 70, it is possible to prevent the vapor of the cleaning liquid L from flowing out of the housing 36 and diffusing during the cleaning process.

洗浄板ユニット５２は、洗浄板２４の周囲空間に窒素を供給する窒素供給装置や、洗浄板２４の周囲空間に温風を供給する温風供給装置等の、所要の機能を有する付属装置７２をさらに備えることができる（図１）。付属装置７２として窒素供給装置を備えることにより、引火性の洗浄液Ｌを用いた場合であっても、洗浄工程中に洗浄板２４の周囲空間に窒素を継続して供給することで、雰囲気の酸素濃度を下げて洗浄液Ｌの発火を未然に防止することができる。また、付属装置７２として温風供給装置を備えることにより、洗浄工程終了後に洗浄板２４の周囲空間に温風を継続して供給することで、洗浄後の基板１２の第１面１２ａを迅速に乾燥させることができる。これらの窒素や温風は、洗浄板２４の軸部３２を通して洗浄板２４の周囲空間に供給することができる。   The cleaning plate unit 52 includes an accessory device 72 having a required function, such as a nitrogen supply device that supplies nitrogen to the surrounding space of the cleaning plate 24 and a hot air supply device that supplies hot air to the surrounding space of the cleaning plate 24. Further, it can be provided (FIG. 1). By providing a nitrogen supply device as the attachment device 72, even if the flammable cleaning liquid L is used, the oxygen in the atmosphere can be supplied by continuously supplying nitrogen to the space around the cleaning plate 24 during the cleaning process. The ignition of the cleaning liquid L can be prevented beforehand by reducing the concentration. Further, by providing a warm air supply device as the attachment device 72, the first surface 12a of the substrate 12 after cleaning can be quickly supplied by continuously supplying warm air to the space around the cleaning plate 24 after the cleaning process is completed. Can be dried. These nitrogen and warm air can be supplied to the surrounding space of the cleaning plate 24 through the shaft portion 32 of the cleaning plate 24.

洗浄工程に際しては、組成の異なる複数種類の洗浄液Ｌを用意することができる。この場合、洗浄液供給部２６は、複数種類の洗浄液Ｌを予め定めた順序で、洗浄板２４の液体支持面２２の中央領域２２ａに供給することができる。それにより、洗浄工程では、複数種類の洗浄液Ｌを予め定めた順序で基板１２の第１面１２ａに接触させることができる。例えば、洗浄力に富む一方でアセトン等の乾燥し難い溶剤を含有する第１の洗浄液Ｌを最初に用いて、基板１２の第１面１２ａを洗浄した後、イソプロピルアルコール等の第２の洗浄液Ｌで基板１２の第１面１２ａを洗浄して第１の洗浄液Ｌを除去することで、基板１２の第１面１２ａを乾燥し易くすることができる。   In the cleaning process, a plurality of types of cleaning liquids L having different compositions can be prepared. In this case, the cleaning liquid supply unit 26 can supply a plurality of types of cleaning liquids L to the central region 22a of the liquid support surface 22 of the cleaning plate 24 in a predetermined order. Thereby, in the cleaning process, a plurality of types of cleaning liquids L can be brought into contact with the first surface 12a of the substrate 12 in a predetermined order. For example, the first cleaning liquid L that is rich in cleaning power but contains a solvent that is difficult to dry such as acetone is first used to clean the first surface 12a of the substrate 12, and then the second cleaning liquid L such as isopropyl alcohol. By cleaning the first surface 12a of the substrate 12 and removing the first cleaning liquid L, the first surface 12a of the substrate 12 can be easily dried.

図示構成を有する基板洗浄装置１０による、図３に示す基板１２に対する基板洗浄方法は、以下の手順で実施される。
基板１２の第２面１２ｂに、外周縁に沿ってフレーム部材５８を固定した支持体１４を貼付する。基板洗浄装置１０は、洗浄板ユニット５２の洗浄板２４が予め作業位置に設置される一方、基板支持部１６のテーブル１８が待機位置に置かれる。第２面１２ｂに支持体１４を貼付した基板１２を、第１面１２ａの全体が露出する姿勢で、待機位置に置かれたテーブル１８の表面１８ａに固定機構２０により固定し、位置決め駆動部５６により、テーブル１８を待機位置から作業位置に移動して、基板１２の第１面１２ａが洗浄板２４の液体支持面２２に対し略一様な隙間Ｇを介して略平行に対向する作業位置に位置決めする。作業位置では、基板１２の基板軸線１２ｃと洗浄板２４の洗浄板軸線２４ａとが、基板１２の第１面１２ａの半径の略半分の距離だけ互いに略平行にずれて配置され、洗浄板２４の液体支持面２２の凸面部分６２が、洗浄板軸線２４ａを中心とし、かつ直径が基板１２の第１面１２ａの半径に略等しい仮想円周Ｐの全体を含む領域に配置される（図４、図６）。 The substrate cleaning method for the substrate 12 shown in FIG. 3 by the substrate cleaning apparatus 10 having the illustrated configuration is performed in the following procedure.
A support 14 having a frame member 58 fixed thereto is attached to the second surface 12b of the substrate 12 along the outer peripheral edge. In the substrate cleaning apparatus 10, the cleaning plate 24 of the cleaning plate unit 52 is installed in the working position in advance, and the table 18 of the substrate support unit 16 is placed in the standby position. The substrate 12 having the support 14 attached to the second surface 12b is fixed to the surface 18a of the table 18 placed at the standby position by the fixing mechanism 20 in a posture in which the entire first surface 12a is exposed, and the positioning drive unit 56 Accordingly, the table 18 is moved from the standby position to the work position, and the first surface 12a of the substrate 12 is moved to the work position facing the liquid support surface 22 of the cleaning plate 24 substantially in parallel with a substantially uniform gap G. Position. In the working position, the substrate axis 12c of the substrate 12 and the cleaning plate axis 24a of the cleaning plate 24 are arranged so as to be substantially parallel to each other by a distance that is approximately half the radius of the first surface 12a of the substrate 12. The convex portion 62 of the liquid support surface 22 is disposed in a region including the entire virtual circumference P with the diameter about the cleaning plate axis 24a and substantially the same as the radius of the first surface 12a of the substrate 12 (FIG. 4, FIG. FIG. 6).

作業位置において、基板１２を支持したテーブル１８を回転駆動部５４により基板軸線１２ｃを中心に回転させるとともに、洗浄板２４を洗浄板駆動部２８により洗浄板軸線２４ａを中心に回転させる。基板１２の回転方向と洗浄板２４の回転方向とは、同一であっても反対であっても良い。基板１２（すなわちテーブル１８）の回転速度は、例えば約２ｒｐｍ〜約２０ｒｐｍであり、洗浄板２４の回転速度は、例えば約１００ｒｐｍ〜約２０００ｒｐｍである。基板１２及び洗浄板２４は、隙間Ｇを安定して維持しながら、それぞれに回転する。   At the working position, the table 18 supporting the substrate 12 is rotated about the substrate axis 12c by the rotation driving unit 54, and the cleaning plate 24 is rotated about the cleaning plate axis 24a by the cleaning plate driving unit 28. The rotation direction of the substrate 12 and the rotation direction of the cleaning plate 24 may be the same or opposite. The rotation speed of the substrate 12 (that is, the table 18) is, for example, about 2 rpm to about 20 rpm, and the rotation speed of the cleaning plate 24 is, for example, about 100 rpm to about 2000 rpm. The substrate 12 and the cleaning plate 24 rotate while maintaining the gap G stably.

洗浄板軸線２４ａを中心に洗浄板２４を回転させながら、洗浄液供給部２６により洗浄液Ｌを、洗浄板２４の液体支持面２２の中央領域２２ａに連続的又は断続的に供給する。このとき、ノズル４２から放出される洗浄液Ｌは、液体支持面２２の中央領域２２ａに設けた肩面４６に一時的に受け止められた後、洗浄板２４の回転に伴って生じる遠心力により液体支持面２２の凹面部分６０に乗り上げて外方へ流動する（図５）。洗浄液Ｌを肩面４６で一時的に受け止めることにより、洗浄液Ｌが液体支持面２２の凹面部分６０上で広範囲に広がって流れるようになる。なお、肩面４６は、図示の円錐台形状に限定されず、階段状等の他の形状を採用できるが、洗浄液Ｌが肩面４６に残留しないような形状であることが望ましい。   The cleaning liquid L is continuously or intermittently supplied to the central region 22a of the liquid support surface 22 of the cleaning plate 24 by the cleaning liquid supply unit 26 while rotating the cleaning plate 24 around the cleaning plate axis 24a. At this time, the cleaning liquid L discharged from the nozzle 42 is temporarily received by the shoulder surface 46 provided in the central region 22 a of the liquid support surface 22, and then supported by the centrifugal force generated by the rotation of the cleaning plate 24. It rides on the concave portion 60 of the surface 22 and flows outward (FIG. 5). By temporarily receiving the cleaning liquid L on the shoulder surface 46, the cleaning liquid L flows over a wide area on the concave portion 60 of the liquid support surface 22. The shoulder surface 46 is not limited to the illustrated truncated cone shape, and other shapes such as a stepped shape can be adopted, but it is desirable that the cleaning liquid L has a shape that does not remain on the shoulder surface 46.

洗浄液Ｌは、洗浄板２４の回転に伴って生じる遠心力により、基板１２の第１面１２ａに接触することなく液体支持面２２の中央領域２２ａから凹面部分６０を外方へ流れ、凸面部分６２に乗り上げたときに、回転する液体支持面２２に追従して回転方向へ移動しながら基板１２の第１面１２ａに接触する（図５）。洗浄板軸線２４ａを中心に回転する洗浄板２４に対し、基板１２が基板軸線１２ｃを中心に回転することで、凸面部分６２と第１面１２ａとの前述した位置及び寸法関係（図６）により、基板１２の第１面１２ａの全体に洗浄液Ｌが満遍無く接触する。その結果、洗浄液Ｌは、基板第１面１２ａに接触する部分を継続して迅速に更新しながら、基板１２の第１面１２ａを確実かつ効率的に洗浄する。   The cleaning liquid L flows outwardly from the central region 22a of the liquid support surface 22 through the concave portion 60 without contacting the first surface 12a of the substrate 12 due to the centrifugal force generated by the rotation of the cleaning plate 24, and the convex portion 62. 5, it contacts the first surface 12 a of the substrate 12 while moving in the rotational direction following the rotating liquid support surface 22 (FIG. 5). With respect to the cleaning plate 24 that rotates about the cleaning plate axis 24a, the substrate 12 rotates about the substrate axis 12c, so that the convex portion 62 and the first surface 12a have the above-described position and dimensional relationship (FIG. 6). The cleaning liquid L contacts the entire first surface 12a of the substrate 12 evenly. As a result, the cleaning liquid L reliably and efficiently cleans the first surface 12a of the substrate 12 while continuously and rapidly updating the portion in contact with the substrate first surface 12a.

凸面部分６２は、液体支持面２２の外周縁に沿って形成されているから、凸面部分６２の周速度を容易に増加させることができる。したがって、凸面部分６２に追従して回転方向へ移動する洗浄液Ｌの移動速度を容易に増加させることができ、以て、洗浄液Ｌによる基板第１面１２ａの洗浄能力を容易に向上させることができる。   Since the convex surface portion 62 is formed along the outer peripheral edge of the liquid support surface 22, the peripheral speed of the convex surface portion 62 can be easily increased. Therefore, it is possible to easily increase the moving speed of the cleaning liquid L that moves in the rotation direction following the convex surface portion 62, and thus the cleaning ability of the substrate first surface 12a by the cleaning liquid L can be easily improved. .

基板１２の第１面１２ａを洗浄した洗浄液Ｌは、洗浄板２４の回転に伴って生じる遠心力により、液体支持面２２の凸面部分６２から洗浄板２４の外方へ飛散する。飛散した洗浄液Ｌは、洗浄板ユニット５２のハウジング３６の外壁６４及び環状フランジ部分６６に受け止められて、外壁６４の内面に沿って流下し、排出口６８から排出されて回収される（図４、図５）。このようにして、基板１２の第２面１２ｂに貼付した支持体１４に洗浄液Ｌを接触させることなく、洗浄液Ｌにより確実かつ効率的に基板１２の第１面１２ａを洗浄できる。したがって、支持体１４を基板１２の第２面１２ｂに貼付するために用いられる接着剤が、洗浄液Ｌにより洗浄されて溶解することを、未然に防止できる。   The cleaning liquid L that has cleaned the first surface 12 a of the substrate 12 scatters out of the cleaning plate 24 from the convex portion 62 of the liquid support surface 22 due to the centrifugal force generated as the cleaning plate 24 rotates. The scattered cleaning liquid L is received by the outer wall 64 and the annular flange portion 66 of the housing 36 of the cleaning plate unit 52, flows down along the inner surface of the outer wall 64, and is discharged from the outlet 68 and collected (FIG. 4, FIG. FIG. 5). In this manner, the first surface 12a of the substrate 12 can be reliably and efficiently cleaned with the cleaning liquid L without bringing the cleaning liquid L into contact with the support 14 attached to the second surface 12b of the substrate 12. Therefore, it is possible to prevent the adhesive used for attaching the support 14 to the second surface 12b of the substrate 12 from being cleaned and dissolved by the cleaning liquid L.

上記した洗浄工程の間、必要に応じて、排気部７０（図１）により洗浄室３８を陰圧にして、洗浄液Ｌの蒸気がハウジング３６の外部に流出して拡散することを防止したり、付属装置７２（図１）としての窒素供給装置により洗浄板２４の周囲空間に窒素を供給して、引火性の洗浄液Ｌの発火を未然に防止したり、洗浄液供給部２６（図１）から複数種類の洗浄液Ｌを予め定めた順序で洗浄板２４の液体支持面２２の中央領域２２ａに供給したりすることができる。また、必要に応じて洗浄工程終了後に、付属装置７２（図１）としての温風供給装置により洗浄板２４の周囲空間に温風を供給して、洗浄後の基板１２の第１面１２ａを迅速に乾燥させることができる。   During the above-described cleaning process, if necessary, the exhaust chamber 70 (FIG. 1) creates a negative pressure in the cleaning chamber 38 to prevent the vapor of the cleaning liquid L from flowing out of the housing 36 and diffusing, Nitrogen is supplied to the surrounding space of the cleaning plate 24 by a nitrogen supply device as the attached device 72 (FIG. 1) to prevent ignition of the flammable cleaning liquid L, or a plurality of cleaning liquid supply units 26 (FIG. 1) Various types of cleaning liquid L can be supplied to the central region 22a of the liquid support surface 22 of the cleaning plate 24 in a predetermined order. Further, after the cleaning process is completed, if necessary, hot air is supplied to the space around the cleaning plate 24 by the hot air supply device as the attachment device 72 (FIG. 1), and the first surface 12a of the substrate 12 after cleaning is removed. It can be dried quickly.

図７は、基板洗浄装置１０で使用可能な種々の洗浄板２４の液体支持面２２の構成を模式図的に示す。液体支持面２２の構成は、（ａ）の、上記した１つの円環状の凸面部分６２を含む構成に限定されず、例えば、（ｂ）同心円状に配置される大小２個の円環状の凸面部分６２を含む構成、（ｃ）周方向へ分割された複数の弓型の凸面部分６２を含む構成、（ｄ）洗浄板２４の直径に沿って直線状に配置される凸面部分６２を含む構成、（ｅ）放射状に配置される複数の凸面部分６２を含む構成等を採用できる。いずれの構成でも、少なくとも１つの凸面部分６２は、前述した仮想円周Ｐ（図６）の少なくとも一部分を含む領域に形成される。また、（ｆ）及び（ｇ）に示すように、液体支持面２２の中央領域２２ａに、軸部３２の開口（図１）や肩面４６を設けない構成とすることもできる。この場合には、ノズル４２を液体支持面２２の上方の遊休空間に設置することができる。   FIG. 7 schematically shows the configuration of the liquid support surface 22 of various cleaning plates 24 that can be used in the substrate cleaning apparatus 10. The configuration of the liquid support surface 22 is not limited to the configuration of (a) including the one annular convex surface portion 62 described above. For example, (b) two large and small annular convex surfaces arranged concentrically. A configuration including a portion 62; (c) a configuration including a plurality of arcuate convex surface portions 62 divided in the circumferential direction; and (d) a configuration including a convex surface portion 62 arranged linearly along the diameter of the cleaning plate 24. (E) A configuration including a plurality of convex surface portions 62 arranged radially can be employed. In any configuration, at least one convex surface portion 62 is formed in a region including at least a part of the aforementioned virtual circumference P (FIG. 6). Further, as shown in (f) and (g), the central region 22a of the liquid support surface 22 may be configured such that the opening (FIG. 1) of the shaft portion 32 and the shoulder surface 46 are not provided. In this case, the nozzle 42 can be installed in an idle space above the liquid support surface 22.

図８及び図９を参照して、本発明の第２の実施形態による基板洗浄装置８０、及び基板洗浄装置８０を用いた本発明の第２の実施形態による基板洗浄方法を説明する。第２の実施形態による基板洗浄装置８０及び基板洗浄方法は、洗浄板２４の構成が異なる点を除いて、図１〜図７を参照して説明した基板洗浄装置１０及び基板洗浄方法と同様の構成を有する。したがって、対応する構成要素には同一の参照符号を付して、その説明を適宜省略する。   The substrate cleaning apparatus 80 according to the second embodiment of the present invention and the substrate cleaning method according to the second embodiment of the present invention using the substrate cleaning apparatus 80 will be described with reference to FIGS. The substrate cleaning apparatus 80 and the substrate cleaning method according to the second embodiment are the same as the substrate cleaning apparatus 10 and the substrate cleaning method described with reference to FIGS. 1 to 7 except that the configuration of the cleaning plate 24 is different. It has a configuration. Accordingly, corresponding components are denoted by the same reference numerals, and description thereof is omitted as appropriate.

基板洗浄装置８０は、全体に一様な平面からなる液体支持面８２を有する洗浄板２４を備えている。液体支持面８２は、洗浄板軸線２４ａを中心とする円形面であることができる。この場合、液体支持面８２の直径は、基板１２の第１面１２ａの直径以下かつ半径以上に設定される。液体支持面８２の直径が第１面１２ａの直径よりも小さい場合、作業位置は、基板軸線１２ｃと洗浄板軸線２４ａとが互いに略平行にずれて配置される位置である（図８）。液体支持面８２の直径が第１面１２ａの直径に等しい場合には、作業位置は、基板軸線１２ｃと洗浄板軸線２４ａとが互いに一致する位置である。   The substrate cleaning apparatus 80 includes a cleaning plate 24 having a liquid support surface 82 having a uniform flat surface as a whole. The liquid support surface 82 may be a circular surface centered on the cleaning plate axis 24a. In this case, the diameter of the liquid support surface 82 is set to be equal to or smaller than the diameter of the first surface 12 a of the substrate 12 and larger than the radius. When the diameter of the liquid support surface 82 is smaller than the diameter of the first surface 12a, the working position is a position where the substrate axis 12c and the cleaning plate axis 24a are arranged to be shifted substantially parallel to each other (FIG. 8). When the diameter of the liquid support surface 82 is equal to the diameter of the first surface 12a, the working position is a position where the substrate axis 12c and the cleaning plate axis 24a coincide with each other.

基板洗浄装置８０は、洗浄板軸線２４ａを中心に洗浄板２４を回転させる洗浄板駆動部２８と、洗浄板２４と基板支持部１６に支持された基板１２とを基板軸線１２ｃを中心に相対的に回転させる回転駆動部５４を備えている。洗浄板２４の液体支持面８２の直径が基板１２の第１面１２ａの直径に等しい場合には、洗浄工程において、基板１２を洗浄板２４と同一の方向へ同一の速度で回転させる態様を除いて、基板１２を適宜回転させたり回転させなかったりすることができる。   The substrate cleaning apparatus 80 has a cleaning plate driving unit 28 that rotates the cleaning plate 24 about the cleaning plate axis 24a, and the substrate 12 supported by the cleaning plate 24 and the substrate support unit 16 relative to each other about the substrate axis 12c. A rotation drive unit 54 is provided for rotation. When the diameter of the liquid support surface 82 of the cleaning plate 24 is equal to the diameter of the first surface 12a of the substrate 12, the mode in which the substrate 12 is rotated in the same direction as the cleaning plate 24 at the same speed in the cleaning step is excluded. Thus, the substrate 12 can be appropriately rotated or not rotated.

図示構成を有する基板洗浄装置８０による、図３に示す基板１２に対する基板洗浄方法は、基板洗浄装置１０による前述した基板洗浄方法と同様の手順で実施される。
洗浄工程では、作業位置において、基板１２を支持したテーブル１８を回転駆動部５４により基板軸線１２ｃ（図１）を中心に回転させるとともに、洗浄板２４を洗浄板駆動部２８により洗浄板軸線２４ａを中心に回転させる。洗浄板軸線２４ａを中心に洗浄板２４を回転させながら、洗浄液供給部２６により洗浄液Ｌを、洗浄板２４の液体支持面８２の中央領域８２ａに連続的又は断続的に供給する。洗浄液Ｌは、洗浄板２４の回転に伴って生じる遠心力により、基板１２の第１面１２ａに接触しながら液体支持面８２の中央領域８２ａから外方へ流れ、同時に、回転する液体支持面８２に追従して回転方向へ移動しながら基板１２の第１面１２ａに接触する（図９）。洗浄板軸線２４ａを中心に回転する洗浄板２４に対し、基板１２が基板軸線１２ｃを中心に回転することで、基板１２の第１面１２ａの全体に洗浄液Ｌが満遍無く接触する（液体支持面８２の直径が第１面１２ａの直径に等しい場合には、基板１２を回転させなくても良い）。その結果、洗浄液Ｌは、基板第１面１２ａに接触する部分を継続して迅速に更新しながら、基板１２の第１面１２ａを確実かつ効率的に洗浄する。 The substrate cleaning method for the substrate 12 shown in FIG. 3 by the substrate cleaning apparatus 80 having the illustrated configuration is performed in the same procedure as the substrate cleaning method described above by the substrate cleaning apparatus 10.
In the cleaning process, at the work position, the table 18 supporting the substrate 12 is rotated about the substrate axis 12c (FIG. 1) by the rotation driving unit 54, and the cleaning plate 24 is moved to the cleaning plate axis 24a by the cleaning plate driving unit 28. Rotate to center. The cleaning liquid L is continuously or intermittently supplied to the central region 82 a of the liquid support surface 82 of the cleaning plate 24 by the cleaning liquid supply unit 26 while rotating the cleaning plate 24 around the cleaning plate axis 24 a. The cleaning liquid L flows outward from the central region 82a of the liquid support surface 82 while being in contact with the first surface 12a of the substrate 12 due to the centrifugal force generated as the cleaning plate 24 rotates, and at the same time, the liquid support surface 82 that rotates. The first surface 12a of the substrate 12 is brought into contact with the first surface 12a while moving in the rotational direction following the movement (FIG. 9). When the substrate 12 rotates about the substrate axis 12c with respect to the cleaning plate 24 that rotates about the cleaning plate axis 24a, the cleaning liquid L uniformly contacts the entire first surface 12a of the substrate 12 (liquid support). If the diameter of the surface 82 is equal to the diameter of the first surface 12a, the substrate 12 may not be rotated). As a result, the cleaning liquid L reliably and efficiently cleans the first surface 12a of the substrate 12 while continuously and rapidly updating the portion in contact with the substrate first surface 12a.

基板１２の第１面１２ａを洗浄した洗浄液Ｌは、洗浄板２４の回転に伴って生じる遠心力により、液体支持面８２から洗浄板２４の外方へ飛散する。飛散した洗浄液Ｌは、洗浄板ユニット５２のハウジング３６の外壁６４及び環状フランジ部分６６に受け止められて、外壁６４の内面に沿って流下し、排出口６８から排出されて回収される（図８、図９）。このようにして、基板１２の第２面１２ｂに貼付した支持体１４に洗浄液Ｌを接触させることなく、洗浄液Ｌにより確実かつ効率的に基板１２の第１面１２ａを洗浄できる。したがって、支持体１４を基板１２の第２面１２ｂに貼付するために用いられる接着剤が、洗浄液Ｌにより洗浄されて溶解することを、未然に防止できる。   The cleaning liquid L that has cleaned the first surface 12 a of the substrate 12 scatters from the liquid support surface 82 to the outside of the cleaning plate 24 due to the centrifugal force generated as the cleaning plate 24 rotates. The scattered cleaning liquid L is received by the outer wall 64 and the annular flange portion 66 of the housing 36 of the cleaning plate unit 52, flows down along the inner surface of the outer wall 64, and is discharged from the outlet 68 and collected (FIG. 8, FIG. 9). In this manner, the first surface 12a of the substrate 12 can be reliably and efficiently cleaned with the cleaning liquid L without bringing the cleaning liquid L into contact with the support 14 attached to the second surface 12b of the substrate 12. Therefore, it is possible to prevent the adhesive used for attaching the support 14 to the second surface 12b of the substrate 12 from being cleaned and dissolved by the cleaning liquid L.

１０、８０ 基板洗浄装置
１２ 基板
１２ａ 第１面
１２ｂ 第２面
１２ｃ 基板軸線
１４ 支持体
１６ 基板支持部
１８ テーブル
２０ 固定機構
２２、８２ 液体支持面
２４ 洗浄板
２４ａ 洗浄板軸線
２６ 洗浄液供給部
２８ 洗浄板駆動部
３２ 軸部
３８ 洗浄室
４２ ノズル
４６ 肩面
５２ 洗浄板ユニット
５４ 回転駆動部
６０ 凹面部分
６２ 凸面部分
６４ 外壁
７０ 排気部
７２ 付属装置 DESCRIPTION OF SYMBOLS 10, 80 Substrate cleaning apparatus 12 Substrate 12a First surface 12b Second surface 12c Substrate axis 14 Support body 16 Substrate support portion 18 Table 20 Fixing mechanism 22, 82 Liquid support surface 24 Cleaning plate 24a Cleaning plate axis 26 Cleaning liquid supply portion 28 Cleaning Plate drive unit 32 Shaft unit 38 Cleaning chamber 42 Nozzle 46 Shoulder surface 52 Cleaning plate unit 54 Rotation drive unit 60 Concave surface part 62 Convex surface part 64 Outer wall 70 Exhaust part 72 Attached device

Claims (5)

基板洗浄方法であって、
第１面及び該第１面の反対側の第２面を有する基板と、液体支持面を有する洗浄板とを用意するステップと、
前記基板を、前記第１面が下方を向く下向き姿勢にするステップと、
前記洗浄板を、前記液体支持面が上方を向く上向き姿勢にするステップと、
前記下向き姿勢の前記基板と前記上向き姿勢の前記洗浄板とを、前記第１面と前記液体支持面とが予め定めた寸法の隙間を介して対向する作業位置に配置するステップと、
前記上向き姿勢の前記洗浄板の前記液体支持面の中央領域に洗浄液を供給するステップと、
前記上向き姿勢の前記洗浄板を、前記中央領域にて前記液体支持面に略直交する軸線として前記洗浄板に定められる洗浄板軸線を中心に回転させるステップと、
前記洗浄板の前記液体支持面に沿って流動する前記洗浄液を前記基板の前記第１面に接触させて、前記基板の前記第１面を洗浄するステップと、
を含む基板洗浄方法。 A substrate cleaning method,
Providing a substrate having a first surface and a second surface opposite to the first surface, and a cleaning plate having a liquid support surface;
Placing the substrate in a downward posture with the first surface facing downward;
Placing the cleaning plate in an upward posture with the liquid support surface facing upward;
Disposing the substrate in the downward posture and the cleaning plate in the upward posture at a working position where the first surface and the liquid support surface face each other with a predetermined size gap therebetween;
Supplying a cleaning liquid to a central region of the liquid support surface of the cleaning plate in the upward posture;
Rotating the cleaning plate in the upward posture around a cleaning plate axis defined on the cleaning plate as an axis substantially orthogonal to the liquid support surface in the central region;
Cleaning the first surface of the substrate by bringing the cleaning liquid flowing along the liquid support surface of the cleaning plate into contact with the first surface of the substrate;
A substrate cleaning method comprising: 前記基板の前記第１面を洗浄するステップは、前記第１面に略直交する軸線として前記基板に定められる基板軸線を中心に、前記基板と前記洗浄板とを相対的に回転させるステップを含む、請求項１に記載の基板洗浄方法。   The step of cleaning the first surface of the substrate includes a step of relatively rotating the substrate and the cleaning plate around a substrate axis defined on the substrate as an axis substantially orthogonal to the first surface. The substrate cleaning method according to claim 1. 第１面及び該第１面の反対側の第２面を有する基板の、該第１面を洗浄する基板洗浄装置において、
前記基板を、前記第１面が下方を向く下向き姿勢で支持できる基板支持部と、
液体支持面を有する洗浄板であって、前記基板支持部に支持された前記基板の前記第１面に該液体支持面が予め定めた寸法の隙間を介して対向できる作業位置に、該液体支持面が上方を向く上向き姿勢で配置される洗浄板と、
前記洗浄板の前記液体支持面の中央領域に洗浄液を供給する洗浄液供給部と、
前記洗浄板を、前記中央領域にて前記液体支持面に略直交する軸線として前記洗浄板に定められる洗浄板軸線を中心に回転させる洗浄板駆動部とを具備し、
前記洗浄液を前記基板の前記第１面に接触させて、前記基板の前記第１面を洗浄することができる、
基板洗浄装置。 In a substrate cleaning apparatus for cleaning a first surface of a substrate having a first surface and a second surface opposite to the first surface,
A substrate support unit capable of supporting the substrate in a downward posture with the first surface facing downward;
A cleaning plate having a liquid support surface, wherein the liquid support surface is disposed at a work position where the liquid support surface can face the first surface of the substrate supported by the substrate support portion via a gap having a predetermined size. A cleaning plate arranged in an upward posture with the surface facing upward;
A cleaning liquid supply unit for supplying a cleaning liquid to a central region of the liquid support surface of the cleaning plate;
A cleaning plate driving section that rotates the cleaning plate around a cleaning plate axis defined by the cleaning plate as an axis substantially orthogonal to the liquid support surface in the central region;
The cleaning liquid can be brought into contact with the first surface of the substrate to clean the first surface of the substrate.
Substrate cleaning device. 前記洗浄板と前記基板支持部に支持された前記基板とを、前記第１面に略直交する軸線として前記基板に定められる基板軸線を中心に、相対的に回転させる回転駆動部をさらに具備する、請求項３に記載の基板洗浄装置。   A rotation driving unit is further provided for rotating the cleaning plate and the substrate supported by the substrate supporting unit relative to each other about a substrate axis defined on the substrate as an axis substantially orthogonal to the first surface. The substrate cleaning apparatus according to claim 3. 前記基板の前記第１面は前記基板軸線を中心とする円形面であり、前記洗浄板の前記液体支持面は前記洗浄板軸線を中心とする円形面であり、前記液体支持面の直径が前記第１面の直径以下である、請求項４に記載の基板洗浄装置。   The first surface of the substrate is a circular surface centered on the substrate axis, the liquid support surface of the cleaning plate is a circular surface centered on the cleaning plate axis, and the diameter of the liquid support surface is The substrate cleaning apparatus according to claim 4, wherein the substrate cleaning apparatus has a diameter equal to or smaller than a diameter of the first surface.
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