JP2012243958A5 - - Google Patents
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- JP2012243958A5 JP2012243958A5 JP2011112764A JP2011112764A JP2012243958A5 JP 2012243958 A5 JP2012243958 A5 JP 2012243958A5 JP 2011112764 A JP2011112764 A JP 2011112764A JP 2011112764 A JP2011112764 A JP 2011112764A JP 2012243958 A5 JP2012243958 A5 JP 2012243958A5
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- processing method
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Description
被処理基板１０２にＳｉ膜の露出面積率を０％、２５％、５０％、９５％とＳｉの露出面積率を大きくしたＴｉＮウエハを用い、これを試料台１０３に載置し、ＴｉＮ膜のエッチングレート確認を行ったところ、表３に示すようにＳｉ面積率０％の場合、リファレンス条件２では１２．０ｎｍ／ｍｉｎの除去速度、一方、本発明では３２．５ｎｍ／ｍｉｎの除去速度、Ｓｉ面積率２５％の場合、リファレンス条件２では１７．０ｎｍ／ｍｉｎの除去速度、一方、本発明では１２５．０ｎｍ／ｍｉｎの除去速度、Ｓｉ面積率５０％の場合、リファレンス条件２では２１．０ｎｍ／ｍｉｎの除去速度、一方、本発明では１９６．９ｎｍ／ｍｉｎの除去速度、Ｓｉ面積率９５％の場合、リファレンス条件２では３０．０ｎｍ／ｍｉｎの除去速度、一方、本発明では２７０．０ｎｍ／ｍｉｎの除去速度であり、リファレンス条件２に比べ除去速度に極めて顕著な効果を奏することができる。 A TiN wafer having a Si exposed area ratio of 0%, 25%, 50%, and 95% and a large Si exposed area ratio was used as the substrate 102 to be processed, and this was placed on the sample stage 103, and the TiN film When the etching rate was confirmed, as shown in Table 3, when the Si area ratio was 0%, the removal rate of 12.0 nm / min in the reference condition 2 whereas the removal rate of 32.5 nm / min in the present invention, When the Si area ratio is 25%, the removal rate of 17.0 nm / min is obtained under the reference condition 2, while the removal speed is 125.0 nm / min according to the present invention and when the Si area ratio is 50%, the removal condition is 21.0 nm under the reference condition 2. / Min, the removal rate of 196.9 nm / min in the present invention, and when the Si area ratio is 95%, the reference condition 2 is 30.0 nm / min. On the other hand, in the present invention, the removal rate is 270.0 nm / min, and the removal rate can be significantly improved as compared with the reference condition 2.
Claims (5)
前記チタンを含有する膜をフッ素を含有するガスを用いてエッチングし、
Ｃｌ２ガスとＣＨＦ３ガスの混合ガスを用いて前記エッチング処理室内をプラズマクリーニングすることを特徴とするプラズマ処理方法。 The substrate to be processed film you containing titanium is disposed at d etching processing chamber in a plasma processing method for processing using a plasma,
Etching the titanium-containing film with a fluorine-containing gas ,
Plasma processing method characterized by flop plasma cleaning pre Symbol etching chamber using a mixed gas of Cl 2 gas and CHF 3 gas.
前記Ｃｌ２ガスとＣＨＦ３ガスの混合ガスにさらにシリコン含有ガスを混合することを特徴とするプラズマ処理方法。 The plasma processing method according to claim 1 ,
Before Symbol C l 2 gas and CHF 3 plasma processing method characterized that you mixed gas further silicon-containing gas to a mixed gas of.
前記プラズマクリーニングは、被処理基板が載置される試料台にシリコンウエハを載置して行われることを特徴とするプラズマ処理方法。 The plasma processing method according to claim 1,
The plasma cleaning method is performed by placing a silicon wafer on a sample stage on which a substrate to be treated is placed .
前記プラズマクリーニングは、被処理基板が載置される試料台に高周波電力を供給しながら行われることを特徴とするプラズマ処理方法。 In the plasma processing method according to any one of claims 1 to 3 ,
The plasma processing method is characterized in that the plasma cleaning is performed while supplying high frequency power to a sample stage on which a substrate to be processed is placed .
前記プラズマクリーニングは、前記チタンを含有する膜が配置された被処理基板の任意の枚数のプラズマ処理毎に行われることを特徴とするプラズマ処理方法。The plasma processing method is characterized in that the plasma cleaning is performed for every arbitrary number of plasma processing of a substrate to be processed on which the titanium-containing film is arranged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011112764A JP2012243958A (en) | 2011-05-19 | 2011-05-19 | Plasma processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011112764A JP2012243958A (en) | 2011-05-19 | 2011-05-19 | Plasma processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012243958A JP2012243958A (en) | 2012-12-10 |
| JP2012243958A5 true JP2012243958A5 (en) | 2014-05-08 |
Family
ID=47465331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011112764A Pending JP2012243958A (en) | 2011-05-19 | 2011-05-19 | Plasma processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2012243958A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6049527B2 (en) * | 2013-04-05 | 2016-12-21 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing apparatus |
| JP6177601B2 (en) * | 2013-06-25 | 2017-08-09 | 東京エレクトロン株式会社 | Cleaning method and substrate processing apparatus |
| JP6284786B2 (en) * | 2014-02-27 | 2018-02-28 | 東京エレクトロン株式会社 | Cleaning method for plasma processing apparatus |
| WO2021260869A1 (en) | 2020-06-25 | 2021-12-30 | 株式会社日立ハイテク | Vacuum process method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5756400A (en) * | 1995-12-08 | 1998-05-26 | Applied Materials, Inc. | Method and apparatus for cleaning by-products from plasma chamber surfaces |
| JP4224374B2 (en) * | 2002-12-18 | 2009-02-12 | 株式会社日立ハイテクノロジーズ | Plasma processing apparatus processing method and plasma processing method |
| JP4764028B2 (en) * | 2005-02-28 | 2011-08-31 | 株式会社日立ハイテクノロジーズ | Plasma processing method |
-
2011
- 2011-05-19 JP JP2011112764A patent/JP2012243958A/en active Pending
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