JP2012195552A - Light-emitting device and manufacturing method therefor - Google Patents
Light-emitting device and manufacturing method therefor Download PDFInfo
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- JP2012195552A JP2012195552A JP2011142413A JP2011142413A JP2012195552A JP 2012195552 A JP2012195552 A JP 2012195552A JP 2011142413 A JP2011142413 A JP 2011142413A JP 2011142413 A JP2011142413 A JP 2011142413A JP 2012195552 A JP2012195552 A JP 2012195552A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Abstract
Description
本発明は発光装置に関し、特に、光源から発せられた光により励起される蛍光体を用いた発光装置に好適なものである。 The present invention relates to a light emitting device, and is particularly suitable for a light emitting device using a phosphor excited by light emitted from a light source.
近年、発光ダイオード（以下、ＬＥＤ）を用いた発光装置として、液晶ディスプレイのＬＥＤバックライトやＬＥＤ電球に注目が集まっている。ＬＥＤバックライトやＬＥＤ電球の発光部は、ＬＥＤの光の一部を蛍光体が波長変換した光と、前記ＬＥＤの前記蛍光体に波長変換されなかった光を混合して放出することにより、本来のＬＥＤの光とは異なる光を発光する構成となっている。 In recent years, attention has been focused on LED backlights and LED bulbs of liquid crystal displays as light emitting devices using light emitting diodes (hereinafter referred to as LEDs). The light emitting part of the LED backlight or the LED light bulb originally emits a mixture of light obtained by wavelength-converting part of the LED light and light not wavelength-converted by the phosphor of the LED. The LED is configured to emit light different from that of the LED.
図８は、特許文献１に示された発光装置の概略図である。該特許文献に示された発光装置９０は、一次光を発する発光素子９１と、一次光の一部を吸収してその一次光の波長以上の波長を有する二次光を発する波長変換部９２とを含み、その波長変換部９２は互いに異なる光吸収帯域を有する複数種の蛍光体９３、９４、９５を含み、これら複数種の蛍光体の少なくとも１種は他の少なくとも１種で発せられた二次光を吸収しうる吸収帯域を有している。このような構造により、発光色の設定が容易となり、輝度の高い発光装置を実現することができる。 FIG. 8 is a schematic diagram of the light emitting device disclosed in Patent Document 1. In FIG. The light emitting device 90 disclosed in the patent document includes a light emitting element 91 that emits primary light, a wavelength conversion unit 92 that absorbs part of the primary light and emits secondary light having a wavelength equal to or greater than the wavelength of the primary light, and The wavelength converter 92 includes a plurality of types of phosphors 93, 94, and 95 having different light absorption bands, and at least one of the plurality of types of phosphors is emitted by at least one other type. It has an absorption band that can absorb the next light. With such a structure, the emission color can be easily set, and a light emitting device with high luminance can be realized.
しかしながら、上記特許文献１における発光装置９０を実際に発光させた場合、発光素子９１からの光が蛍光体の各層を通過する際に、上部の層において光が一部吸収されたり、あるいは光散乱が起こることにより、特に最下層９３からの赤色光の取り出し効率が低くなってしまう。このため、各色の発光強度のバランスが崩れ、理想的な色再現性及び明るさを得ることは困難である。また、発光素子から放射される熱が十分に発光装置内から放出されず、電気エネルギーが光エネルギーに変換できず、発光装置の発光効率の低下あるいは発光装置の劣化を進行させることがある。 However, when the light emitting device 90 in Patent Document 1 is actually caused to emit light, when the light from the light emitting element 91 passes through each layer of the phosphor, the light is partially absorbed or scattered by the upper layer. As a result, red light extraction efficiency particularly from the lowermost layer 93 is lowered. For this reason, the balance of the emission intensity of each color is lost, and it is difficult to obtain ideal color reproducibility and brightness. In addition, heat radiated from the light emitting element is not sufficiently emitted from the light emitting device, and electric energy cannot be converted into light energy, which may cause a decrease in light emission efficiency of the light emitting device or deterioration of the light emitting device.
本発明は、上記の問題点に鑑みてなされたものであり、その目的は、簡単な方法で発光色の調整、設定が可能で、光散乱の影響を緩和し、明るく、色再現性が良く、発光素子の放熱効果を上げて、発光装置の発光効率の低下あるいは発光装置の劣化の進行を防ぐ発光装置を提供することにある。 The present invention has been made in view of the above problems, and its purpose is to adjust and set the emission color by a simple method, to reduce the influence of light scattering, to be bright and to have good color reproducibility. An object of the present invention is to provide a light-emitting device that increases the heat dissipation effect of the light-emitting element and prevents the light emission efficiency of the light-emitting device from decreasing or the light-emitting device from deteriorating.
本発明に係る発光装置は、一次光を発光する発光素子と、前記一次光の一部を吸収して二次光を発光する波長変換部を備えた発光装置において、前記波長変換部は少なくとも蛍光体を含む樹脂層からなる、第１の波長変換部と第２の波長変換部とを含む複数の樹脂層からなり、前記複数の樹脂層は互いに異なる発光帯域を有し、前記第１の波長変換部は、前記第２の波長変換部より、前記発光素子に近い側に配置され、前記波長変換部は、前記一次光の光路方向の厚みが均一でないことを特徴とする。 A light-emitting device according to the present invention includes a light-emitting element that emits primary light and a wavelength conversion unit that absorbs a part of the primary light and emits secondary light, and the wavelength conversion unit is at least fluorescent. A plurality of resin layers including a first wavelength converter and a second wavelength converter, the resin layers having different emission bands, and the first wavelength. The conversion unit is disposed closer to the light emitting element than the second wavelength conversion unit, and the wavelength conversion unit is not uniform in thickness in the optical path direction of the primary light.
また、前記複数の樹脂層は、相対的に長い波長の二次光を発する順序で前記発光素子に近い側から配置されていることを特徴としてもよい。 The plurality of resin layers may be arranged from the side closer to the light emitting element in the order of emitting secondary light having a relatively long wavelength.
また、前記第１の波長変換部は、ナノ結晶である蛍光体を含む樹脂層から構成され、前記第２の波長変換部は、希土類付活蛍光体もしくは遷移金属元素付活蛍光体を含む樹脂層から構成されていることを特徴としてもよい。 In addition, the first wavelength conversion unit is composed of a resin layer containing a phosphor that is a nanocrystal, and the second wavelength conversion unit is a resin containing a rare earth activated phosphor or a transition metal element activated phosphor. It may be characterized by being composed of layers.
また、前記ナノ結晶蛍光体は、ＩＩＩ―Ｖ族化合物半導体または、ＩＩ―ＶＩ化合物半導体よりなることを特徴としてもよい。 The nanocrystalline phosphor may be made of a III-V compound semiconductor or an II-VI compound semiconductor.
また、前記ナノ結晶蛍光体は、ＩｎＰまたはＣｄＳｅのうち、少なくとも一つを含むことを特徴とする。また、前記希土類付活蛍光体は、付活剤としてＣｅもしくはＥｕを含むことを特徴としてもよい。 The nanocrystalline phosphor includes at least one of InP and CdSe. The rare earth activated phosphor may contain Ce or Eu as an activator.
また、前記希土類付活蛍光体は、窒化物系蛍光体であることを特徴としてもよい。 The rare earth activated phosphor may be a nitride phosphor.
また、前記窒化物系蛍光体は、サイアロン蛍光体であることを特徴としてもよい。 The nitride-based phosphor may be a sialon phosphor.
また、前記第２の波長変換部は、前記一次光の波長の光路方向の厚みが均一でないことを特徴としてもよい。また、前記第１の波長変換部と、前記第２の波長変換部が接する面において、前記第２の波長変換部側の面積が、前記第１の波長変換部側の面積より小さいことを特徴としてもよい。 In addition, the second wavelength conversion unit may be characterized in that the thickness of the wavelength of the primary light in the optical path direction is not uniform. Further, in the surface where the first wavelength conversion unit and the second wavelength conversion unit are in contact with each other, the area on the second wavelength conversion unit side is smaller than the area on the first wavelength conversion unit side. It is good.
また、前記発光素子の近傍に放熱板を備えることを特徴としてもよい。 In addition, a heat radiating plate may be provided in the vicinity of the light emitting element.
本発明に係る発光装置の製造方法は、パッケージの底面上に発光素子を搭載する工程と、前記発光素子を覆うように第１の蛍光体が混練された液状樹脂を注入して硬化させることにより、第１の波長変換部を形成する工程と、前記第１の波長変換部の上に、第２の蛍光体が混練された液状樹脂を注入して硬化させることにより、第２の波長変換部を形成する工程と、前記第２の波長変換部の一部を除去する工程を含むことを特徴とする。 The method for manufacturing a light-emitting device according to the present invention includes a step of mounting a light-emitting element on a bottom surface of a package, and injecting and curing a liquid resin in which a first phosphor is kneaded so as to cover the light-emitting element. The step of forming the first wavelength conversion unit and the second wavelength conversion unit by injecting and curing a liquid resin kneaded with the second phosphor on the first wavelength conversion unit And a step of removing a part of the second wavelength conversion unit.
本発明の発光装置によれば、簡単な方法で発光色の調整や設定が可能で、光散乱の影響を緩和し、明るく、色再現性が良く、また、発光装置の発光効率の低下あるいは発光装置の劣化の進行を防ぐ発光装置を実現することができる。 According to the light emitting device of the present invention, the emission color can be adjusted and set by a simple method, the influence of light scattering is reduced, the light is bright and the color reproducibility is good, and the light emission efficiency of the light emitting device is reduced or light emission A light-emitting device that prevents the deterioration of the device from progressing can be realized.
以下、本発明の一つの実施形態について図１〜図７を用いて以下に説明する。なお、図面において、同一の参照符号は、同一部分または相当部分を表わすものとする。本願において、「ナノ結晶」とは結晶サイズを励起子ボーア半径程度まで小さくし、量子サイズ効果による励起子の閉じ込めやバンドギャップの増大が観測される結晶を指すものとする。 Hereinafter, one embodiment of the present invention will be described below with reference to FIGS. In the drawings, the same reference numerals represent the same or corresponding parts. In the present application, “nanocrystal” refers to a crystal in which the crystal size is reduced to about the exciton Bohr radius, and exciton confinement or band gap increase due to the quantum size effect is observed.
＜実施形態１＞
図１は、第１の実施形態に係る発光装置１０の断面図である。発光装置１０は、電極１が形成された基板２と、電極１上に設けられたパッケージ３及び発光素子４と、発光素子４と電極１を接続するワイヤ５、発光素子４の光路順に半導体ナノ粒子を含有する第１の波長変換部６とＥｕ付活β型サイアロン蛍光体を含有する第２の波長変換部７が積層されたものとで構成される。
<Embodiment 1>
FIG. 1 is a cross-sectional view of a light emitting device 10 according to the first embodiment. The light emitting device 10 includes a substrate 2 on which an electrode 1 is formed, a package 3 and a light emitting element 4 provided on the electrode 1, a wire 5 that connects the light emitting element 4 and the electrode 1, and an optical path of the light emitting element 4. The first wavelength conversion unit 6 containing particles and the second wavelength conversion unit 7 containing Eu-activated β-sialon phosphor are stacked.
電極１を形成する導体は、発光素子４を電気的に接続するための電導路としての機能を有し、ワイヤ５にて発光素子４と電気的に接続されている。導体としては、たとえばＷ、Ｍｏ、Ｃｕ、またはＡｇ等の金属粉末を含むメタライズ層を用いることができる。基板２は、熱伝導性が高く、かつ全反射率の大きいことが求められるため、たとえばアルミナ、窒化アルミニウム等のセラミック材料のほかに、金属酸化物微粒子を分散させた高分子樹脂が好適に用いられる。 The conductor forming the electrode 1 has a function as a conductive path for electrically connecting the light emitting element 4, and is electrically connected to the light emitting element 4 by a wire 5. As the conductor, for example, a metallized layer containing metal powder such as W, Mo, Cu, or Ag can be used. Since the substrate 2 is required to have a high thermal conductivity and a high total reflectance, a polymer resin in which metal oxide fine particles are dispersed is preferably used in addition to a ceramic material such as alumina or aluminum nitride. It is done.
パッケージ３は、高い反射率を持ちつつ、封止樹脂との密着性が良いポリフタルアミドなどにより構成される。発光素子４は、光源として用いられ、たとえば４５０ｎｍにピーク波長を有するＧａＮ系発光ダイオード、ＺｎＯ系発光ダイオード、ダイヤモンド系発光ダイオード等を用いることができる。 The package 3 is made of polyphthalamide or the like having high reflectance and good adhesion to the sealing resin. The light emitting element 4 is used as a light source, and for example, a GaN light emitting diode having a peak wavelength at 450 nm, a ZnO light emitting diode, a diamond light emitting diode, or the like can be used.
第１の波長変換部６は、蛍光体を含む樹脂層から構成され、例えば、ＩｎＰ系のナノ結晶を用いることができる。ＩｎＰは粒径を小さく（ナノ結晶化）していくと、量子効果によってバンドギャップを青色から赤色の範囲で制御することができる。例えば、赤色発光する粒径を有する、ＩｎＰ系ナノ結晶をシリコーン樹脂中に混合し硬化させたものが用いられる。 The first wavelength conversion unit 6 is composed of a resin layer containing a phosphor, and for example, InP-based nanocrystals can be used. When the particle size of InP is reduced (nanocrystallization), the band gap can be controlled in the range from blue to red by the quantum effect. For example, an InP nanocrystal having a particle size that emits red light and mixed and cured in a silicone resin is used.
このほか、波長変換部６として、ＩｎＰ以外のＩＩＩ―Ｖ族化合物半導体やＩＩ―ＶＩ化合物半導体よりなるナノ結晶である赤色蛍光体を用いてもよい。たとえば、ＩＩ―ＶＩ族化合物半導体やＩＩＩ―Ｖ族化合物半導体よりなるナノ結晶の化合物半導体としては、二元系では、ＩＩ−ＶＩ族化合物半導体として、ＣｄＳ、ＣｄＳｅ、ＣｄＴｅ、ＺｎＳ、ＺｎＳｅ、ＺｎＴｅ、ＨｇＳ、ＨｇＳｅ、ＨｇＴｅ、ＰｂＳｅ、ＰｂＳ等が挙げられる。ＩＩＩ−Ｖ族化合物半導体としては、ＧａＮ、ＧａＰ、ＧａＡｓ、ＡｌＮ、ＡｌＰ、ＡｌＡｓ、ＩｎＮ、ＩｎＰ、ＩｎＡｓ等が挙げられる。 In addition, a red phosphor that is a nanocrystal made of a III-V group compound semiconductor or II-VI compound semiconductor other than InP may be used as the wavelength conversion unit 6. For example, as a nanocrystalline compound semiconductor composed of a II-VI group compound semiconductor or a III-V group compound semiconductor, in a binary system, as a II-VI group compound semiconductor, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, PbSe, PbS etc. are mentioned. Examples of the III-V group compound semiconductor include GaN, GaP, GaAs, AlN, AlP, AlAs, InN, InP, InAs, and the like.
また、三元系や四元系では、ＣｄＳｅＳ、ＣｄＳｅＴｅ、ＣｄＳＴｅ、ＺｎＳｅＳ、ＺｎＳｅＴｅ、ＺｎＳＴｅ、ＨｇＳｅＳ、ＨｇＳｅＴｅ、ＨｇＳＴｅ、ＣｄＺｎＳ、ＣｄＺｎＳｅ、ＣｄＺｎＴｅ、ＣｄＨｇＳ、ＣｄＨｇＳｅ、ＣｄＨｇＴｅ、ＨｇＺｎＳ、ＨｇＺｎＳｅ、ＨｇＺｎＴｅ、ＣｄＺｎＳｅＳ、ＣｄＺｎＳｅＴｅ、ＣｄＺｎＳＴｅ、ＣｄＨｇＳｅＳ、ＣｄＨｇＳｅＴｅ、ＣｄＨｇＳＴｅ、ＨｇＺｎＳｅＳ、ＨｇＺｎＳｅＴｅ、ＨｇＺｎＳＴｅ、ＧａＮＰ、ＧａＮＡｓ、ＧａＰＡｓ、ＡｌＮＰ、ＡｌＮＡｓ、ＡｌＰＡｓ、ＩｎＮＰ、ＩｎＮＡｓ、ＩｎＰＡｓ、ＩｎＧａＮ、ＧａＡｌＮＰ、ＧａＡｌＮＡｓ、ＧａＡｌＰＡｓ、ＧａＩｎＮＰ、ＧａＩｎＮＡｓ、ＧａＩｎＰＡｓ、ＩｎＡｌＮＰ、ＩｎＡｌＮＡｓ、ＩｎＡｌＰＡｓ等が挙げられる。 In ternary and quaternary systems, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgSe, CdHgSe, CdHgSe, CdHgSe, CdHgSe, CdHgSe, CdHgSe, CdHgSe, CdHgSe , CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTTe, HgZnSeS, HgZnSeTe, HgZnSTe, GaNP, GaNAs, GaPAs, AlNP, AlNAs, AlPAs, InNP, InNAs, InPAs, InGaN, GaAlNP , InAlPAs etc. It is.
そして、第１の波長変換部６としては、ＩｎおよびＰを含むナノ結晶、または、ＣｄおよびＳｅを含むナノ結晶を用いることが好ましい。その理由は、ＩｎおよびＰを含むナノ結晶、または、ＣｄおよびＳｅを含むナノ結晶は、可視光域（３８０ｎｍ〜７８０ｎｍ）で発光する粒径のナノ結晶を作製し易いためである。 And as the 1st wavelength conversion part 6, it is preferable to use the nanocrystal containing In and P or the nanocrystal containing Cd and Se. This is because a nanocrystal containing In and P or a nanocrystal containing Cd and Se can easily produce a nanocrystal having a particle size that emits light in the visible light region (380 nm to 780 nm).
その中でも特に、ＩｎＰ、またはＣｄＳｅを用いることが好ましい。理由としては、ＩｎＰとＣｄＳｅは、構成する材料が少ないため作製がし易い上、高い量子収率を示す材料であり、ＬＥＤの光を照射した際、高い発光効率を示すからである。ここでの量子収率とは、吸収した光子数に対する蛍光として発光した光子数の割合のことである。さらに言えば、第１の波長変換部６として、強い毒性を示すＣｄを含まないＩｎＰを用いることが好ましい。 Among them, it is particularly preferable to use InP or CdSe. The reason for this is that InP and CdSe are easy to manufacture because of the small amount of constituent materials, and also show high quantum yield, and show high luminous efficiency when irradiated with LED light. The quantum yield here is the ratio of the number of photons emitted as fluorescence to the number of absorbed photons. Furthermore, it is preferable to use InP which does not contain Cd which shows strong toxicity as the first wavelength conversion unit 6.
第２の波長変換部は、例えば、図１に示すように中央部にくぼみが設けられ、発光素子４の光路方向の厚みが一定ではない。また、第２の波長変換部７は、上記第１の波長変換部と異なる発光帯域を有する蛍光体を含む樹脂層から構成され、例えば、希土類付活蛍光体もしくは遷移金属元素付活蛍光体を用いることが出来る。これらの蛍光体は、酸素や水分の影響で蛍光体の発光効率が低下しにくい蛍光体であり、たとえば、蛍光体母体がイットリウム・アルミニウム・ガーネット（ＹＡＧ）に付活剤としてセリウム（Ｃｅ）を導入したＹＡＧ：Ｃｅなどが挙げられる。 For example, as shown in FIG. 1, the second wavelength conversion unit is provided with a recess in the center, and the thickness of the light emitting element 4 in the optical path direction is not constant. The second wavelength conversion unit 7 is composed of a resin layer containing a phosphor having a light emission band different from that of the first wavelength conversion unit. For example, a rare earth activated phosphor or a transition metal element activated phosphor is used. Can be used. These phosphors are phosphors in which the luminous efficiency of the phosphor is unlikely to decrease due to the influence of oxygen and moisture. Examples include YAG: Ce introduced.
さらに、これらの蛍光体は希土類や遷移金属元素を付活された窒化物系蛍光体であることが望ましい。窒化物系蛍光体は、高温下でも発光効率の低下が起きにくい特徴を持つ。窒化物系蛍光体としては、たとえば、サイアロン蛍光体が考えられ、β型サイアロン（ＳｉＡｌＯＮ）に希土類元素や遷移金属元素を付活した蛍光体が知られている。Ｔｂ、Ｙｂ、Ａｇを付活したβ型サイアロンは５２５ｎｍから５４５ｎｍの緑色を発光する蛍光体となる。さらに、β型サイアロンにＥｕ２＋を付活した緑色の蛍光体が知られている。Ｅｕ付活β型サイアロン蛍光体は、従来の公知の方法にて製造することが出来る。具体的には、たとえばＥｕ２Ｏ３、ＥｕＮ等の光学活性元素Ｅｕを含有する金属化合物と窒化アルミニウム（ＡｌＮ）粉末と窒化珪素粉末（Ｓｉ３Ｎ４）とを均一に混合し、１８００〜２０００℃程度の温度で焼成することで得られる。これら原料粉末の混合比は、焼成後の蛍光体の組成比を考慮して適宜選択される。 Further, these phosphors are desirably nitride phosphors activated with rare earth elements or transition metal elements. Nitride-based phosphors have a feature that light emission efficiency is not easily lowered even at high temperatures. As the nitride-based phosphor, for example, a sialon phosphor can be considered, and a phosphor obtained by activating a rare earth element or a transition metal element in β-type sialon (SiAlON) is known. Β-sialon activated Tb, Yb, Ag becomes a phosphor emitting green light of 525 nm to 545 nm. Furthermore, a green phosphor in which Eu 2+ is activated on β-type sialon is known. The Eu-activated β-sialon phosphor can be produced by a conventionally known method. Specifically, for example, a metal compound containing an optically active element Eu such as Eu 2 O 3 or EuN, an aluminum nitride (AlN) powder, and a silicon nitride powder (Si 3 N 4 ) are uniformly mixed, and 1800 to 2000 are mixed. It can be obtained by firing at a temperature of about ℃. The mixing ratio of these raw material powders is appropriately selected in consideration of the composition ratio of the phosphor after firing.
次に、発光装置１０の製造方法を以下に説明する。本実施形態では、樹脂層が２層の場合について説明するが、樹脂層は互いに異なる発光帯域を有しておればよく、層の数が増えても発光装置の製造は同様にして行うことが可能である。 Next, a method for manufacturing the light emitting device 10 will be described below. In this embodiment, the case where there are two resin layers will be described. However, the resin layers only need to have different emission bands, and the light emitting device can be manufactured in the same manner even if the number of layers increases. Is possible.
図２及び図３は、発光装置１０の製造工程を説明する図である。まず、図２に示されるように電極１、基板２、パッケージ３、発光素子４、そしてワイヤ５が備わったＬＥＤパッケージを用意する。 2 and 3 are diagrams illustrating a manufacturing process of the light emitting device 10. First, as shown in FIG. 2, an LED package including an electrode 1, a substrate 2, a package 3, a light emitting element 4, and a wire 5 is prepared.
次に、重量比で樹脂：ナノ結晶である赤色蛍光体＝１０００：４．６２の比になるよう樹脂とナノ結晶である赤色蛍光体を含有するトルエン溶液を混合する。ナノ結晶である赤色蛍光体には、ＩｎＰ結晶からなるものを使用した。また、シリコーン樹脂は、信越化学工業株式会社製ＳＣＲ１０１１を使用した。ＳＣＲ１０１１以外でも、ナノ結晶である赤色蛍光体が均一に分散される樹脂であって、透明であり、熱や光に強い樹脂であれば使用することが出来る。 Next, the toluene solution containing the resin and the nanocrystalline red phosphor is mixed so that the weight ratio of resin: nanocrystalline red phosphor = 1000: 4.62. As the red phosphor that is a nanocrystal, an InP crystal was used. As the silicone resin, SCR 1011 manufactured by Shin-Etsu Chemical Co., Ltd. was used. In addition to SCR 1011, any resin can be used as long as it is a resin in which the red phosphor that is a nanocrystal is uniformly dispersed and is transparent and resistant to heat and light.
次に、図３に示すように、上記ＬＥＤパッケージにナノ結晶である赤色蛍光体を含有した液状樹脂を滴下し、所定の時間で硬化させることで第１の波長変換部６を作製した。次に、重量比で樹脂：Ｅｕ付活β型サイアロン蛍光体＝１０００：２００の比で混合する。シリコーン樹脂は、信越化学工業株式会社製ＳＣＲ１０１１（硬化前粘度３５０ｍＰａ・ｓ）を使用した。ＳＣＲ１０１１以外でも、Ｅｕ付活β型サイアロン蛍光体が均一に分散される樹脂であって、透明であり、熱や光に強い樹脂であれば使用することが出来る。 Next, as shown in FIG. 3, the liquid crystal resin containing the red fluorescent substance which is a nanocrystal was dripped at the said LED package, and the 1st wavelength conversion part 6 was produced by making it harden | cure in predetermined time. Next, the resin: Eu-activated β-sialon phosphor is mixed at a weight ratio of 1000: 200. As the silicone resin, SCR 1011 (viscosity before curing 350 mPa · s) manufactured by Shin-Etsu Chemical Co., Ltd. was used. Other than SCR 1011, any resin can be used as long as it is a resin in which the Eu-activated β-sialon phosphor is uniformly dispersed and is transparent and resistant to heat and light.
その後、第１の波長変換部６が形成されているＬＥＤパッケージにＥｕ付活β型サイアロン蛍光体を含有する液状樹脂を滴下し、所定の時間で硬化させることで第２の波長変換部７を作製した。今回は、第１の波長変換部６と第２の波長変換部７の一次光の光路方向の厚みは、同じになるよう調整したが、求められる発光装置の仕様にしたがって、厚みを設定すればよい。その後、イオンビームで第２の波長変換部７を削り取る。上記のようにして、図１に示すような発光装置１０が作製される。 Thereafter, a liquid resin containing Eu-activated β-sialon phosphor is dropped on the LED package in which the first wavelength conversion unit 6 is formed, and the second wavelength conversion unit 7 is cured by curing for a predetermined time. Produced. This time, the thickness in the optical path direction of the primary light of the first wavelength conversion unit 6 and the second wavelength conversion unit 7 was adjusted to be the same, but if the thickness is set according to the required specifications of the light emitting device Good. Thereafter, the second wavelength converter 7 is scraped off with an ion beam. As described above, the light emitting device 10 as shown in FIG. 1 is manufactured.
図４（ａ）〜（ｄ）は、本実施形態における発光装置１０ａ〜１０ｄの断面図である。図４（ａ）に示す発光装置１０ａにおいては、第２の波長変換部７２には、その表面に波型のくぼみが複数設けられている。図４（ｂ）に示す発光装置１０ｂにおいては、第２の波長変換部７３は、中央付近において断面略Ｕ字状のくぼみが設けられている。図４（ｃ）に示す発光装置１０ｃにおいては、第２の波長変換部７４は、中央付近において断面略Ｖ字状のくぼみが設けられている。図４（ｄ）に示す発光装置１０ｄにおいては、第２の波長変換部７５は、断面が凹凸状となっている。これらの作製方法については、上記で説明した作製方法と同様である。 4A to 4D are cross-sectional views of the light emitting devices 10a to 10d in the present embodiment. In the light emitting device 10a shown in FIG. 4A, the second wavelength conversion unit 72 is provided with a plurality of corrugated depressions on the surface thereof. In the light emitting device 10b shown in FIG. 4B, the second wavelength conversion unit 73 is provided with a recess having a substantially U-shaped cross section near the center. In the light emitting device 10c shown in FIG. 4C, the second wavelength conversion unit 74 is provided with a recess having a substantially V-shaped cross section near the center. In the light emitting device 10d illustrated in FIG. 4D, the second wavelength conversion unit 75 has an uneven cross section. These manufacturing methods are similar to the manufacturing methods described above.
本実施形態によれば、第２の波長変換部において、一次光波長の光路方向に対する厚みが厚い部分と、一次光波長の光路方向に対する厚みが薄い部分が存在する。発光素子４及び第１の波長変換部６からの発光は、厚みが厚い部分より、厚みが薄い部分において、よく通過する。理由は、第２の波長変換部を構成する樹脂層の厚みの薄い部分では、樹脂層の厚みが厚い部分に比べ、樹脂層を構成する樹脂及び蛍光体の絶対量が少ないため、当然、発光素子４及び第１の波長変換部６からの発光を吸収する量も減り、前記発光が取り出しやすくなるためである。さらに、樹脂層の厚みが薄い部分に含まれる蛍光体の総数は、樹脂層の厚みが厚い部分に比べ少ないので、発光素子４及び第１の波長変換部６からの発光が、第２の波長変換部に含まれる蛍光体によって散乱を起こす可能性が低くなるからである。このように第２の波長変換部の厚みを部分的に異ならせることで、第１の波長変換部からの光を効率よく取り出すことができる。 According to this embodiment, in the second wavelength conversion unit, there are a portion where the thickness of the primary light wavelength in the optical path direction is thick and a portion where the thickness of the primary light wavelength in the optical path direction is thin. The light emitted from the light emitting element 4 and the first wavelength conversion unit 6 passes through the portion where the thickness is thinner than the portion where the thickness is thick. The reason is that, in the portion where the thickness of the resin layer constituting the second wavelength conversion portion is thin, the absolute amount of the resin and the phosphor constituting the resin layer is small compared to the portion where the thickness of the resin layer is thick. This is because the amount of light emitted from the element 4 and the first wavelength converter 6 is also reduced, and the light emission can be easily extracted. Furthermore, since the total number of phosphors contained in the portion where the thickness of the resin layer is thin is smaller than that in the portion where the thickness of the resin layer is thick, the light emitted from the light emitting element 4 and the first wavelength conversion unit 6 is the second wavelength. This is because the possibility of scattering due to the phosphor contained in the conversion unit is reduced. Thus, by making the thickness of the second wavelength conversion part partially different, the light from the first wavelength conversion part can be extracted efficiently.
また、第２の波長変換部７は、厚みが薄い部分が存在すること、または、第２の波長変換部７が部分的に削り取られていることで、空気と接する表面積が大きくなっている。そのため、発光素子４から放射される熱が発光装置１０内から上部に放出されやすく、熱による発光効率の低下を抑えることができる。また、熱による発光装置１０の劣化を防ぐことができる。なお、本実施形態のように、第１の波長変換部６に熱に弱いという特性を持つナノ結晶である蛍光体を用いた場合には、前記放熱効果により、ナノ結晶である蛍光体の劣化を抑えることもできるので、特に有効である。さらに、図５に示すように、発光素子４の下部に放熱板１１を配しても良い。放熱板１１の材料としてはアルミニウムや銅などが用いられる。放熱板１１を配することにより、発光装置１０の下部からも放熱が可能となり、発光装置１０の上下から放熱されるので、さらに温度上昇を抑える効果が期待できる。なお、本実施形態では、第２の波長変換部の形状として４つの例を挙げて説明したが、これに限られるものではなく、発光装置１０に求められる光の色味や光量に応じて、形状や厚みを適宜調整すればよい。 In addition, the second wavelength conversion unit 7 has a small surface area, or the second wavelength conversion unit 7 is partially cut away, so that the surface area in contact with air is increased. Therefore, the heat radiated from the light emitting element 4 is easily released from the inside of the light emitting device 10 to the upper portion, and a decrease in light emission efficiency due to heat can be suppressed. Moreover, deterioration of the light emitting device 10 due to heat can be prevented. In addition, when the fluorescent substance which is a nanocrystal with the characteristic that it is weak to heat is used for the 1st wavelength conversion part 6 like this embodiment, degradation of the fluorescent substance which is a nanocrystal by the said heat dissipation effect This is particularly effective. Furthermore, as shown in FIG. 5, a heat radiating plate 11 may be disposed below the light emitting element 4. Aluminum, copper, or the like is used as the material of the heat sink 11. By disposing the heat radiating plate 11, it is possible to radiate heat from the lower part of the light emitting device 10, and heat is radiated from above and below the light emitting device 10, so that an effect of further suppressing the temperature rise can be expected. In the present embodiment, four examples are described as the shape of the second wavelength conversion unit, but the shape is not limited to this, and depending on the color and light amount of light required for the light emitting device 10, What is necessary is just to adjust a shape and thickness suitably.
＜実施形態２＞
次に、図６を参照して第２の実施形態について説明する。本実施形態では、第１の波長変換部６と第２の波長変換部７が接する面において、第２の波長変換部７側の面積が、第１の波長変換部６側の面積より小さいという点で、前記実施形態１の構成とは異なっている。
<Embodiment 2>
Next, a second embodiment will be described with reference to FIG. In the present embodiment, the area on the second wavelength conversion unit 7 side is smaller than the area on the first wavelength conversion unit 6 side on the surface where the first wavelength conversion unit 6 and the second wavelength conversion unit 7 are in contact with each other. This is different from the configuration of the first embodiment.
図６は、本実施形態における発光装置２０の断面図である。第１の波長変換部６と、前記第２の波長変換部７６が接する面において、第２の波長変換部７６側の面積：第１の波長変換部６側の面積＝１：２になるように作製している。作製方法としては、実施形態１で説明した製造方法で発光装置１０を作製した後、イオンビームで第２の波長変換部７６側の面積：第１の波長変換部６側の面積＝１：２になるように第２の波長変換部７６を削り取り、第１の波長変換部６を露出させる。 FIG. 6 is a cross-sectional view of the light emitting device 20 in the present embodiment. On the surface where the first wavelength converter 6 and the second wavelength converter 76 are in contact, the area on the second wavelength converter 76 side: the area on the first wavelength converter 6 side = 1: 2. It is made in. As a manufacturing method, after the light-emitting device 10 is manufactured by the manufacturing method described in Embodiment 1, the area on the second wavelength conversion unit 76 side with the ion beam: the area on the first wavelength conversion unit 6 side = 1: 2. The second wavelength conversion unit 76 is scraped off so that the first wavelength conversion unit 6 is exposed.
本実施形態によれば、第１の波長変換部６からの光は、第２の波長変換部７６を通過して発光する部分と、第２の波長変換部７６を通過せず、直接発光する部分が存在し、第１の波長変換部６からの光を効率よく取り出すことができる。本実施形態では、例として、第１の波長変換部６と、前記第２の波長変換部７６が接する面において、第２の波長変換部７６側の面積：第１の波長変換部６側の面積＝１：２になるように作製したが、この比率は、発光装置２０に求められる光の色味や光量に応じて適宜調整すればよい。 According to the present embodiment, the light from the first wavelength conversion unit 6 directly emits light without passing through the second wavelength conversion unit 76 and the portion that emits light through the second wavelength conversion unit 76. There is a portion, and the light from the first wavelength converter 6 can be extracted efficiently. In the present embodiment, as an example, on the surface where the first wavelength conversion unit 6 and the second wavelength conversion unit 76 are in contact, the area on the second wavelength conversion unit 76 side: the first wavelength conversion unit 6 side Although it was fabricated so that the area was 1: 2, this ratio may be appropriately adjusted according to the color and light amount of light required for the light emitting device 20.
このような構成をとることで、第１の波長変換部６からの発光の一部については、第２の波長変換部７を通過しないでそのまま取り出されるため、第２の波長変換部７に光が一部吸収されたり、光散乱の影響を受けることがなく、上述のようにそれぞれの波長変換部の接する面における面積比を調整することで、第１の波長変換部６から所望の赤色発光量を得ることができる。また、第１の波長変換部６の上部の第２の波長変換部７が無い部分においては、発光素子４から放射される熱が発光装置１０内から上部に放出されやすく、熱による発光効率の低下を抑えることができる。さらに、熱による発光装置１０の劣化を防ぐことができる。なお、本実施形態のように、第１の波長変換部６に熱に弱いという特性を持つナノ結晶である蛍光体を用いた場合には、前記放熱効果により、ナノ結晶である蛍光体の劣化を抑えることもできるので、特に有効である。 By adopting such a configuration, a part of the light emitted from the first wavelength conversion unit 6 is extracted as it is without passing through the second wavelength conversion unit 7, so that light is transmitted to the second wavelength conversion unit 7. Is absorbed in part or is not affected by light scattering, and the desired red light emission from the first wavelength conversion unit 6 is achieved by adjusting the area ratio on the surface in contact with each wavelength conversion unit as described above. The quantity can be obtained. Further, in a portion where the second wavelength conversion unit 7 above the first wavelength conversion unit 6 is not provided, the heat radiated from the light emitting element 4 is easily released from the inside of the light emitting device 10 to the upper part, and the luminous efficiency due to heat is increased. The decrease can be suppressed. Furthermore, deterioration of the light emitting device 10 due to heat can be prevented. In addition, when the fluorescent substance which is a nanocrystal with the characteristic that it is weak to heat is used for the 1st wavelength conversion part 6 like this embodiment, degradation of the fluorescent substance which is a nanocrystal by the said heat dissipation effect This is particularly effective.
＜実施形態３＞
次に、図７を用いて、第３の実施形態について説明する。本実施形態では、波長変換部が３層の樹脂層にて形成されている。それぞれの樹脂層には蛍光体が含まれており、互いに異なる発光帯域を持つ。樹脂層の積層順としては、相対的に長い波長の二次光を発する順序で前記発光素子に近い側から配置されていることが所望の色バランスを得やすくなるという点からも望ましい。その理由としては、例えば青色蛍光体のように、短い波長の（励起エネルギーの大きい）蛍光体で発光した二次光は、例えば赤色蛍光体のように、長い波長の（励起エネルギーの小さい）蛍光体に吸収されてしまい、所望の色バランスを得るのが難しくなるからである。上記実施形態１、２においても同様のことが言える。
<Embodiment 3>
Next, a third embodiment will be described with reference to FIG. In this embodiment, the wavelength conversion part is formed of three resin layers. Each resin layer contains a phosphor and has different emission bands. As the order of lamination of the resin layers, it is desirable that the resin layers are arranged from the side closer to the light emitting element in the order of emitting secondary light having a relatively long wavelength from the viewpoint of easily obtaining a desired color balance. The reason is that secondary light emitted from a phosphor having a short wavelength (high excitation energy), such as a blue phosphor, is emitted from a long wavelength (low excitation energy), such as a red phosphor. This is because it is absorbed by the body and it becomes difficult to obtain a desired color balance. The same can be said for the first and second embodiments.
図７（ａ）〜（ｄ）は、本実施形態における発光装置３０ａ〜３０ｄの断面図である。図７（ａ）に示す発光装置３０ａにおいては、樹脂層８１には、中央付近において断面略四角形の形状のくぼみが設けられている。図７（ｂ）に示す発光装置３０ｂにおいては、樹脂層８１および樹脂層８２にまたがり、中央付近において断面略Ｕ字状のくぼみが設けられている。図７（ｃ）に示す発光装置３０ｃにおいては、樹脂層８１には、中央付近において断面略Ｖ字状のくぼみが設けられている。図７（ｄ）に示す発光装置３０ｄにおいては、樹脂層８１、樹脂層８２、樹脂層８３にまたがり、断面略Ｖ字状のくぼみが設けられている。このように波長変換部の厚みを異ならせることで、発光素子４に近い側の樹脂層に含まれた蛍光体からの光を取り出しやすくすることができる。また、樹脂層の薄い部分においては、発光素子４から放射される熱が発光装置１０内から上部に放出されやすく、熱による発光効率の低下を抑えることができる。さらに、熱による発光装置１０の劣化を防ぐことができる。なお、本実施形態のように、第１の波長変換部６に熱に弱いという特性を持つナノ結晶である蛍光体を用いた場合には、前記放熱効果により、ナノ結晶である蛍光体の劣化を抑えることもできるので、特に有効である。樹脂層の数、くぼみの形状、及び大きさ、深さについては、本実施形態で示した例に限られるものではなく、求められる発光装置の仕様により適宜決定すればよい。 7A to 7D are cross-sectional views of the light emitting devices 30a to 30d in the present embodiment. In the light emitting device 30a shown in FIG. 7A, the resin layer 81 is provided with a recess having a substantially square cross section near the center. In the light emitting device 30b shown in FIG. 7B, a recess having a substantially U-shaped cross section is provided in the vicinity of the center across the resin layer 81 and the resin layer 82. In the light emitting device 30c shown in FIG. 7C, the resin layer 81 is provided with a recess having a substantially V-shaped cross section near the center. In the light emitting device 30d shown in FIG. 7D, a recess having a substantially V-shaped cross section is provided across the resin layer 81, the resin layer 82, and the resin layer 83. Thus, by making the thickness of the wavelength conversion part different, it is possible to easily extract light from the phosphor contained in the resin layer on the side close to the light emitting element 4. Moreover, in the thin part of the resin layer, the heat radiated from the light emitting element 4 is easily released from the inside of the light emitting device 10 to the upper portion, and the decrease in the luminous efficiency due to the heat can be suppressed. Furthermore, deterioration of the light emitting device 10 due to heat can be prevented. In addition, when the fluorescent substance which is a nanocrystal with the characteristic that it is weak to heat is used for the 1st wavelength conversion part 6 like this embodiment, degradation of the fluorescent substance which is a nanocrystal by the said heat dissipation effect This is particularly effective. The number of resin layers, the shape, size, and depth of the recess are not limited to the examples shown in this embodiment, and may be determined as appropriate according to the required specifications of the light emitting device.
以上のように、波長変換部の厚みを異ならせることにより、発光色の調整や設定が可能となり、光散乱の影響を緩和し、明るく、色再現性のよい発光装置を実現することが可能となった。 As described above, by changing the thickness of the wavelength conversion unit, it is possible to adjust and set the emission color, to reduce the influence of light scattering, and to realize a bright light-emitting device with good color reproducibility. became.
１ 電極
２ 基板
３ パッケージ
４ 発光素子
５ ワイヤ
６ 第１の波長変換部
７、７２、７３、７４，７５ 第２の波長変換部
１０、１０ａ、１０ｂ、１０ｃ、１０ｄ、２０、３０ａ、３０ｂ、３０ｃ、３０ｄ 発光装置
１１ 放熱板
８１、８２、８３ 樹脂層
DESCRIPTION OF SYMBOLS 1 Electrode 2 Board | substrate 3 Package 4 Light emitting element 5 Wire 6 1st wavelength conversion part 7, 72, 73, 74,75 2nd wavelength conversion part 10, 10a, 10b, 10c, 10d, 20, 30a, 30b, 30c , 30d Light-emitting device 11 Heat sink 81, 82, 83 Resin layer
本発明に係る発光装置は、一次光を発光する発光素子と、前記一次光の一部を吸収して二次光を発光する波長変換部を備えた発光装置において、前記波長変換部は、少なくともナノ結晶である蛍光体を含む樹脂層からなる第１の波長変換部と希土類付活蛍光体もしくは遷移金属元素付活蛍光体を含む樹脂層からなる第２の波長変換部とを含む複数の樹脂層からなり、前記複数の樹脂層は互いに異なる発光帯域を有し、前記第１の波長変換部は、前記第２の波長変換部より、前記発光素子に近い側に配置され、前記波長変換部は、前記一次光の光路方向の厚みが均一でないことを特徴とする。 The light emitting device according to the present invention is a light emitting device including a light emitting element that emits primary light, a wavelength converting part for emitting the secondary light by absorbing a portion of the primary light, the wavelength converting part is at least A plurality of resins including a first wavelength conversion unit made of a resin layer containing a phosphor that is a nanocrystal and a second wavelength conversion unit made of a resin layer containing a rare earth activated phosphor or a transition metal element activated phosphor The plurality of resin layers have different emission bands, and the first wavelength conversion unit is disposed closer to the light emitting element than the second wavelength conversion unit, and the wavelength conversion unit Is characterized in that the thickness of the primary light in the optical path direction is not uniform.
また、前記ナノ結晶蛍光体は、ＩＩＩ−Ｖ族化合物半導体または、ＩＩ−ＶＩ族化合物半導体よりなることを特徴としてもよい。 The nanocrystalline phosphor may be made of a group III-V compound semiconductor or a group II-VI compound semiconductor.
本発明に係る発光装置の製造方法は、パッケージの底面上に発光素子を搭載する工程と、前記発光素子を覆うようにナノ結晶である蛍光体が混練された液状樹脂を注入して硬化させることにより、第１の波長変換部を形成する工程と、前記第１の波長変換部の上に、希土類付活蛍光体もしくは遷移金属元素付活蛍光体が混練された液状樹脂を注入して硬化させることにより、第２の波長変換部を形成する工程と、前記第２の波長変換部の一部を除去する工程を含むことを特徴とする。 The method of manufacturing a light emitting device according to the present invention includes a step of mounting a light emitting element on a bottom surface of a package, and injecting and curing a liquid resin in which a phosphor that is a nanocrystal is kneaded so as to cover the light emitting element. The step of forming the first wavelength conversion part and the liquid resin in which the rare earth activated phosphor or transition metal element activated phosphor is kneaded are injected and cured on the first wavelength conversion part. Thus, the method includes a step of forming a second wavelength conversion unit and a step of removing a part of the second wavelength conversion unit.
このほか、第１の波長変換部６として、ＩｎＰ以外のＩＩＩ−Ｖ族化合物半導体やＩＩ−ＶＩ族化合物半導体よりなるナノ結晶である赤色蛍光体を用いてもよい。たとえば、ＩＩ−ＶＩ族化合物半導体やＩＩＩ−Ｖ族化合物半導体よりなるナノ結晶の化合物半導体としては、二元系では、ＩＩ−ＶＩ族化合物半導体として、ＣｄＳ、ＣｄＳｅ、ＣｄＴｅ、ＺｎＳ、ＺｎＳｅ、ＺｎＴｅ、ＨｇＳ、ＨｇＳｅ、ＨｇＴｅ、ＰｂＳｅ、ＰｂＳ等が挙げられる。ＩＩＩ−Ｖ族化合物半導体としては、ＧａＮ、ＧａＰ、ＧａＡｓ、ＡｌＮ、ＡｌＰ、ＡｌＡｓ、ＩｎＮ、ＩｎＰ、ＩｎＡｓ等が挙げられる。 In addition, a red phosphor that is a nanocrystal made of a III-V group compound semiconductor or II-VI group compound semiconductor other than InP may be used as the first wavelength conversion unit 6. For example, as a nanocrystalline compound semiconductor composed of a II-VI group compound semiconductor or a III-V group compound semiconductor, in a binary system, as a II-VI group compound semiconductor, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, PbSe, PbS etc. are mentioned. Examples of the III-V group compound semiconductor include GaN, GaP, GaAs, AlN, AlP, AlAs, InN, InP, InAs, and the like.
Claims (12)
前記一次光の一部を吸収して二次光を発光する波長変換部を備えた発光装置において、
前記波長変換部は少なくとも蛍光体を含む樹脂層からなる、第１の波長変換部と第２の波長変換部とを含む複数の樹脂層からなり、
前記複数の樹脂層は互いに異なる発光帯域を有し、
前記第１の波長変換部は、前記第２の波長変換部より、前記発光素子に近い側に配置され、
前記波長変換部は、前記一次光の光路方向の厚みが均一でないことを特徴とする発光装置。 A light emitting element that emits primary light;
In a light emitting device including a wavelength conversion unit that absorbs part of the primary light and emits secondary light,
The wavelength conversion unit is composed of a resin layer including at least a phosphor, and includes a plurality of resin layers including a first wavelength conversion unit and a second wavelength conversion unit,
The plurality of resin layers have different emission bands,
The first wavelength conversion unit is disposed closer to the light emitting element than the second wavelength conversion unit,
The light emitting device according to claim 1, wherein the wavelength converter has a non-uniform thickness in the optical path direction of the primary light.
前記第２の波長変換部側の面積が、前記第１の波長変換部側の面積より小さいことを特徴とする請求項１から請求項９のいずれか１項に記載の発光装置。 In the surface where the first wavelength conversion unit and the second wavelength conversion unit are in contact,
10. The light emitting device according to claim 1, wherein an area on the second wavelength conversion unit side is smaller than an area on the first wavelength conversion unit side.
前記発光素子を覆うように第１の蛍光体が混練された液状樹脂を注入して硬化させることにより、第１の波長変換部を形成する工程と、
前記第１の波長変換部の上に、第２の蛍光体が混練された液状樹脂を注入して硬化させることにより、第２の波長変換部を形成する工程と、
前記第２の波長変換部の一部を除去する工程を含む発光装置の製造方法。 Mounting a light emitting element on the bottom surface of the package;
A step of forming a first wavelength conversion unit by injecting and curing a liquid resin in which a first phosphor is kneaded so as to cover the light emitting element;
A step of forming a second wavelength conversion unit by injecting and curing a liquid resin kneaded with a second phosphor on the first wavelength conversion unit;
A method for manufacturing a light emitting device, comprising a step of removing a part of the second wavelength conversion unit.
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