JP2012136756A5 - - Google Patents
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- JP2012136756A5 JP2012136756A5 JP2010291234A JP2010291234A JP2012136756A5 JP 2012136756 A5 JP2012136756 A5 JP 2012136756A5 JP 2010291234 A JP2010291234 A JP 2010291234A JP 2010291234 A JP2010291234 A JP 2010291234A JP 2012136756 A5 JP2012136756 A5 JP 2012136756A5
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- reactive gas
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- sputtering method
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Description
上述した課題を解決するために、本発明の1つの側面は、互いに材料が異なるターゲットが取り付けられた2つのターゲットホルダーが配された真空容器内において、前記真空容器内に不活性ガス及び反応性ガスが導入された状態において、前記2つのターゲットを同時にスパッタリングすることで基板に前記2つのターゲットの材料の混合物を含有する膜を成膜する際に、前記2つのターゲットの各々への前記反応性ガスの供給量が異なることを特徴とする。
また、本発明の他の側面は、真空容器内に不活性ガス及び反応性ガスを導入し、アルミニウムターゲット及びチタンターゲットを同時にスパッタリングすることで基板にアルミニウムおよびチタンの混合物を含有する膜を成膜する際に、前記チタンターゲットへの前記反応性ガスの供給量が前記アルミニウムターゲットへの前記反応性ガスの供給量よりも多いことを特徴とする。
In order to solve the above-described problems, one aspect of the present invention is that, in a vacuum vessel in which two target holders to which targets of different materials are attached are arranged , an inert gas and a reactive property are contained in the vacuum vessel . When a film containing a mixture of materials of the two targets is formed on a substrate by simultaneously sputtering the two targets in a state where a gas is introduced, the reaction to each of the two targets It is characterized in that the supply amount of the characteristic gas is different.
In another aspect of the present invention, an inert gas and a reactive gas are introduced into a vacuum vessel, and a film containing a mixture of aluminum and titanium is formed on a substrate by simultaneously sputtering an aluminum target and a titanium target. In this case, the supply amount of the reactive gas to the titanium target is larger than the supply amount of the reactive gas to the aluminum target.
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010291234A JP5661452B2 (en) | 2010-12-27 | 2010-12-27 | Sputtering method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010291234A JP5661452B2 (en) | 2010-12-27 | 2010-12-27 | Sputtering method |
Publications (3)
Publication Number | Publication Date |
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JP2012136756A JP2012136756A (en) | 2012-07-19 |
JP2012136756A5 true JP2012136756A5 (en) | 2014-01-09 |
JP5661452B2 JP5661452B2 (en) | 2015-01-28 |
Family
ID=46674400
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010291234A Active JP5661452B2 (en) | 2010-12-27 | 2010-12-27 | Sputtering method |
Country Status (1)
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JP (1) | JP5661452B2 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5785660B2 (en) * | 2012-08-09 | 2015-09-30 | 株式会社アルバック | Film forming method and film forming apparatus |
US9929310B2 (en) | 2013-03-14 | 2018-03-27 | Applied Materials, Inc. | Oxygen controlled PVD aluminum nitride buffer for gallium nitride-based optoelectronic and electronic devices |
TWI815945B (en) * | 2018-08-10 | 2023-09-21 | 美商應用材料股份有限公司 | Multicathode deposition system |
CN113614274A (en) | 2019-03-22 | 2021-11-05 | 应用材料公司 | Method and apparatus for depositing multilayer device with superconducting film |
EP3942088A4 (en) * | 2019-03-22 | 2022-12-21 | Applied Materials, Inc. | Method and apparatus for deposition of metal nitrides |
KR20210144932A (en) * | 2019-04-22 | 2021-11-30 | 어플라이드 머티어리얼스, 인코포레이티드 | gas flow system |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3866615B2 (en) * | 2002-05-29 | 2007-01-10 | 株式会社神戸製鋼所 | Reactive sputtering method and apparatus |
JP4740575B2 (en) * | 2004-11-01 | 2011-08-03 | 株式会社ユーテック | Opposing target type sputtering apparatus and opposing target type sputtering method |
JP2006130375A (en) * | 2004-11-02 | 2006-05-25 | Bridgestone Corp | Catalyst structure for storing and generating hydrogen and storage and generation method for hydrogen using it |
JP4761031B2 (en) * | 2005-08-03 | 2011-08-31 | セイコーエプソン株式会社 | Ferroelectric capacitor, method of manufacturing the same, and ferroelectric memory device |
JP4703349B2 (en) * | 2005-10-11 | 2011-06-15 | Okiセミコンダクタ株式会社 | Amorphous film deposition method |
JP5174825B2 (en) * | 2006-10-26 | 2013-04-03 | ハウザー テクノ−コーティング ベー.フェー. | Dual magnetron sputtering power supply and magnetron sputtering equipment |
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2010
- 2010-12-27 JP JP2010291234A patent/JP5661452B2/en active Active
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