JP2012134251A - 高周波半導体スイッチ - Google Patents
高周波半導体スイッチ Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 230000005669 field effect Effects 0.000 claims abstract description 11
- 238000004891 communication Methods 0.000 claims abstract description 5
- 210000000746 body region Anatomy 0.000 claims description 22
- 238000013459 approach Methods 0.000 claims description 2
- 238000003780 insertion Methods 0.000 abstract description 10
- 230000037431 insertion Effects 0.000 abstract description 10
- 230000005540 biological transmission Effects 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000010410 layer Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
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- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
【解決手段】無線通信を切り替えるための高周波半導体スイッチに含まれる電界効果型トランジスタ50であって、基板に形成されたソース領域100と電気的に接続され、一の方向に延びるソース配線60と、基板に形成されたドレイン領域110と電気的に接続され、ソース配線と略平行に延びるドレイン配線70と、ソース配線60およびドレイン配線70の間において、ソース配線60およびドレイン配線70と略平行に延びる平行部分122を有するゲート120と、ゲート120に電圧を印加するためゲート配線80と、ゲート120およびゲート配線80を電気的に接続するゲートビア82と、を有し、平行部分122は、2つの端部126を有し、ゲートビア82から2つの端部126にそれぞれ電圧の印加の経路が形成される電界効果型トランジスタ。
【選択図】図3
Description
図1は、高周波半導体スイッチの概略回路構成の一例を示す図である。
図9は第2実施形態の高周波半導体スイッチに含まれるFETのゲート、ソースおよびドレイン配線を示す概略平面図、図10は配線の下部に位置するゲート、ソース領域およびドレイン領域を示す平面図、図11は、図9の11−11線に沿って切ったFETの概略断面図である。第1実施形態と同様の構成には、同じ参照番号を付し、その説明を省略している。
20a〜d シリーズスイッチ、
30 アンテナ端子、
40a〜d 端子、
50 FET、
60、260 ソース配線、
62、262 柄部分、
64、264 歯部分、
66、76、82、92、282、292、 ビア、
70、270 ドレイン配線、
72 柄部分、
74 歯部分、
80、280 ゲート配線、
90、290 ボディ配線、
100、300 ソース領域、
110、310 ドレイン領域、
120、220、320 ゲート、
122 平行部分、
124 直交部分、
126、322 端部、
130 シリコン基板、
140 絶縁膜、
150、350 ボディ領域、
160 酸化膜。
Claims (6)
- 無線通信を切り替えるための高周波半導体スイッチに含まれる電界効果型トランジスタであって、
基板に形成されたソース領域と電気的に接続され、一の方向に延びるソース配線と、
基板に形成されたドレイン領域と電気的に接続され、前記ソース配線と略平行に延びるドレイン配線と、
前記ソース配線および前記ドレイン配線の間において、前記ソース配線および前記ドレイン配線と略平行に延びる平行部分を有するゲートと、
前記ゲートに電圧を印加するためゲート配線と、
前記ゲートおよび前記ゲート配線を電気的に接続するゲートビアと、
を有し、
前記平行部分は、2つの端部を有し、前記ゲートビアから前記2つの端部にそれぞれ電圧の印加の経路が形成される電界効果型トランジスタ。 - 前記ゲートは、前記平行部分と同一層に形成され、当該平行部分に直交して延びる直交部分も有し、
前記ビアは、前記直交部分上に設けられる請求項1記載の電界効果型トランジスタ。 - 前記直交部分は、1本形成され、
前記平行部分は、前記直交部分から両側に延びる請求項1または請求項2記載の電界効果型トランジスタ。 - 前記ゲートの下部であって、前記基板に形成されたボディ領域と、
前記ボディ領域に電圧を印加するためのボディ配線と、
前記ボディ領域と前記ボディ配線とを電気的に接続するボディビアとをさらに有し、
前記ボディ配線は、前記直交部分と略平行に、前記ゲートの両側に形成される請求項3記載の電界効果型トランジスタ。 - 前記ゲート配線は、一の方向と直交する方向に2本延び、前記平行部分を挟むように形成され、
前記平行部分は2本に分割され、各ゲート配線から互い近づくように延びる請求項1記載の電界効果型トランジスタ。 - 前記ゲートの下部であって、前記基板に形成されたボディ領域と、
前記ボディ領域に電圧を印加するためのボディ配線と、
前記ボディ領域と前記ボディ配線とを電気的に接続するボディビアとをさらに有し、
前記ボディ配線は、前記ゲート配線と略平行に、分割された前記平行部分の間に形成される請求項5記載の電界効果型トランジスタ。
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JP2010283720A JP2012134251A (ja) | 2010-12-20 | 2010-12-20 | 高周波半導体スイッチ |
KR1020110087274A KR101288239B1 (ko) | 2010-12-20 | 2011-08-30 | 고주파 반도체 스위치 |
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JP2010283720A JP2012134251A (ja) | 2010-12-20 | 2010-12-20 | 高周波半導体スイッチ |
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Cited By (1)
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JP2017130625A (ja) * | 2016-01-22 | 2017-07-27 | 株式会社東芝 | 高周波スイッチ |
Citations (1)
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JP2008211215A (ja) * | 2007-02-27 | 2008-09-11 | Samsung Electronics Co Ltd | マルチフィンガートランジスタ |
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US5789791A (en) * | 1996-08-27 | 1998-08-04 | National Semiconductor Corporation | Multi-finger MOS transistor with reduced gate resistance |
US7005708B2 (en) * | 2001-06-14 | 2006-02-28 | Sarnoff Corporation | Minimum-dimension, fully-silicided MOS driver and ESD protection design for optimized inter-finger coupling |
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JP2008211215A (ja) * | 2007-02-27 | 2008-09-11 | Samsung Electronics Co Ltd | マルチフィンガートランジスタ |
Cited By (2)
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JP2017130625A (ja) * | 2016-01-22 | 2017-07-27 | 株式会社東芝 | 高周波スイッチ |
US10347655B2 (en) | 2016-01-22 | 2019-07-09 | Kabushiki Kaisha Toshiba | Semiconductor switch |
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KR20120069527A (ko) | 2012-06-28 |
KR101288239B1 (ko) | 2013-07-26 |
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