JP2012134230A - Circuit board and electronic apparatus using the same - Google Patents

Circuit board and electronic apparatus using the same Download PDF

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JP2012134230A
JP2012134230A JP2010283268A JP2010283268A JP2012134230A JP 2012134230 A JP2012134230 A JP 2012134230A JP 2010283268 A JP2010283268 A JP 2010283268A JP 2010283268 A JP2010283268 A JP 2010283268A JP 2012134230 A JP2012134230 A JP 2012134230A
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metal
circuit board
metal body
electronic component
insulating substrate
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Sadakatsu Yoshida
定功 吉田
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Abstract

PROBLEM TO BE SOLVED: To provide a circuit board and an electronic apparatus which prevent cracks and breakage from occurring in an electronic component, has good heat radiation performance for heat generated from the electronic component, and has excellent long-term reliability.SOLUTION: A circuit board 10 includes: an insulated substrate 1 having a through hole; a metal plate 3 attached to a lower surface of the insulated substrate 1 so as to close the through hole; a metal circuit plate 4 attached to an upper surface of the insulted substrate 1; a metal body 5 which is at least partially placed in the through hole and is joined to the metal plate 3 at a lower end part; and a frame body 6 which has an inner surface joined to a side surface of the metal body 5 so as to enclose at least the side surface of an upper end part of the metal body 5 and has a thermal expansion coefficient smaller than the metal body 5. An electronic component 20 is mounted on an upper surface of a composite body formed by joining the metal body 5 to the frame body 6. This structure efficiently radiates heat generated from the electronic component 20 to the exterior and prevents cracks and breakage from occurring in the electronic component 20.

Description

本発明は、電子部品が搭載される回路基板およびそれを用いた電子装置に関するものである。   The present invention relates to a circuit board on which electronic components are mounted and an electronic device using the circuit board.

パワーモジュールまたはスイッチングモジュール等の例えばＩＧＢＴ（Insulated Gate
Bipolar Transistor）などの電子部品が搭載された電子装置に用いられる回路基板とし
て、絶縁基板の上下両面に例えば銅またはアルミニウム等からなる金属板および金属回路板が接合された回路基板が用いられる。電子部品は、金属板に搭載され、例えばボンディングワイヤによって金属回路板に電気的に接続される。パワーモジュールに使用される電流は非常に高電力となるため、電子部品から発生する熱も大きく、この熱によるデバイスの誤動作あるいは破壊を防止するために、発生熱をいかに系外に放出するかが大きな問題になっており、絶縁基板の一方の表面に配線回路層を設け、絶縁基板の他方の表面に放熱板を設けて、他方の表面側に、銅を主成分とする導体が充填された複数のビア導体が配設し、ビア導体と放熱板とを接合することで、電子部品から放熱板への伝熱性を向上させたものがある（例えば、特許文献１を参照。）。 Power module or switching module, eg IGBT (Insulated Gate)
As a circuit board used in an electronic device on which an electronic component such as a bipolar transistor is mounted, a circuit board in which a metal plate made of, for example, copper or aluminum and a metal circuit board are bonded to both upper and lower surfaces of an insulating substrate is used. The electronic component is mounted on a metal plate and is electrically connected to the metal circuit plate by, for example, a bonding wire. Since the current used for the power module is very high power, the heat generated from the electronic components is large, and how to release the generated heat outside the system to prevent malfunction or destruction of the device due to this heat. It is a big problem, a wiring circuit layer is provided on one surface of the insulating substrate, a heat sink is provided on the other surface of the insulating substrate, and a conductor mainly composed of copper is filled on the other surface side. There is one in which a plurality of via conductors are arranged and the heat conductivity from the electronic component to the heat sink is improved by joining the via conductor and the heat sink (see, for example, Patent Document 1).

また、絶縁基板の上下面の金属板間での導通をとるためではあるが、絶縁基板の上下両面に金属板を接合させておき、これら金属板を絶縁基板に設けた貫通孔内に配置された金属体を介して接続することで、上下の金属板を接合した回路基板があり（例えば、特許文献２を参照。）、この金属体を伝熱経路として用いることが考えられる。   Moreover, although it is for taking electrical continuity between the metal plates on the upper and lower surfaces of the insulating substrate, the metal plates are bonded to the upper and lower surfaces of the insulating substrate, and these metal plates are disposed in the through holes provided in the insulating substrate. In addition, there is a circuit board in which upper and lower metal plates are joined by connecting via a metal body (see, for example, Patent Document 2), and it is conceivable to use this metal body as a heat transfer path.

特開2001−156406号公報JP 2001-156406 A 特開2001−68808号公報Japanese Patent Laid-Open No. 2001-68808

しかしながら、従来の回路基板は、金属板の上に電子部品が搭載されるものであるため、例えば銅からなる金属板の熱膨張係数と電子部品の熱膨張係数との差が大きく、金属板の熱膨張係数と電子部品の熱膨張係数との差によって応力が発生し、電子部品にクラックや割れが発生してしまうという問題があった。   However, since a conventional circuit board has electronic components mounted on a metal plate, for example, the difference between the thermal expansion coefficient of a metal plate made of copper and the thermal expansion coefficient of an electronic component is large. There is a problem that stress is generated due to a difference between the thermal expansion coefficient and the thermal expansion coefficient of the electronic component, and the electronic component is cracked or cracked.

本発明は上記問題点に鑑みて完成されたものであり、その目的は、電子部品にクラックや割れが発生することを防止して、電子部品から発生する熱の放散が良好な長期信頼性に優れた回路基板および電子装置を提供することにある。   The present invention has been completed in view of the above problems, and its purpose is to prevent occurrence of cracks and cracks in electronic components, and to provide long-term reliability with good heat dissipation from electronic components. An object is to provide an excellent circuit board and electronic device.

本発明の回路基板は、貫通孔を有する絶縁基板と、該絶縁基板の下面に前記貫通孔を塞ぐように取着されている金属板と、少なくとも一部分が前記貫通孔内に配置され前記絶縁基板の下面に取着された前記金属板に下端部が接合されており、電子部品が搭載される上端部を有している金属体と、少なくとも前記金属体の上端部の側面を囲むように内面が前記金属体の側面に接合されており、前記金属体よりも小さい熱膨張係数を有する枠体とを備えていることを特徴とするものである。   The circuit board according to the present invention includes an insulating substrate having a through hole, a metal plate attached to a lower surface of the insulating substrate so as to close the through hole, and at least a part of the metal substrate disposed in the through hole. A metal body having a lower end joined to the metal plate attached to the lower surface of the metal plate and having an upper end on which an electronic component is mounted, and an inner surface so as to surround at least a side surface of the upper end of the metal body Is joined to the side surface of the metal body and has a frame body having a smaller thermal expansion coefficient than the metal body.

また、本発明の回路基板は、上記構成において、前記金属体は、前記電子部品の搭載領
域の直下に位置することを特徴とするものである。 The circuit board according to the present invention is characterized in that, in the above configuration, the metal body is located immediately below a mounting region of the electronic component.

また、本発明の回路基板は、上記構成において、前記金属体の上面は、前記電子部品の搭載領域よりも大きいことを特徴とするものである。   Moreover, the circuit board of the present invention is characterized in that, in the above configuration, the upper surface of the metal body is larger than a mounting area of the electronic component.

また、本発明の電子装置は、上記構成の本発明の回路基板と、該回路基板の前記金属板に搭載された電子部品とを備えていることを特徴とするものである。   An electronic device according to the present invention includes the circuit board according to the present invention configured as described above, and an electronic component mounted on the metal plate of the circuit board.

本発明の回路基板によれば、貫通孔を有する絶縁基板と、絶縁基板の下面に貫通孔を塞ぐように取着されている金属板と、絶縁基板の上面に取着されている金属回路板と、少なくとも一部分が貫通孔内に配置されて金属板に下端部が接合されている金属体と、少なくとも金属体の上端部の側面を囲むように内面が金属体の側面に接合されている、金属体よりも小さい熱膨張係数を有する枠体とを備えており、金属体と枠体とが接合されてなる複合体の上面に電子部品が搭載される搭載部を有していることから、例えば銅またはアルミニウム等の熱伝導率の高い材料を金属体に用いると、電子部品と絶縁基板の下面の金属板との間には高熱伝導率の金属体のみからなる伝熱経路が形成されるので、電子部品から発生する熱を効率よく外部に放散することが可能となる。また、金属体よりも熱膨張係数の小さい枠体を備えることによって、電子部品と金属体との熱膨張係数の差による熱応力の発生が抑制され、電子部品にクラックや割れが発生することが有効に防止され、長期信頼性に優れた回路基板を提供することが可能となる。   According to the circuit board of the present invention, an insulating substrate having a through hole, a metal plate attached to the lower surface of the insulating substrate so as to close the through hole, and a metal circuit plate attached to the upper surface of the insulating substrate A metal body having at least a portion disposed in the through hole and having the lower end joined to the metal plate, and an inner surface joined to the side of the metal body so as to surround at least the side of the upper end of the metal body. A frame body having a smaller coefficient of thermal expansion than the metal body, and since it has a mounting portion on which an electronic component is mounted on the upper surface of the composite body formed by joining the metal body and the frame body, For example, when a material having high thermal conductivity such as copper or aluminum is used for the metal body, a heat transfer path composed of only the metal body having high thermal conductivity is formed between the electronic component and the metal plate on the lower surface of the insulating substrate. Therefore, heat generated from electronic components is efficiently dissipated to the outside. Rukoto is possible. In addition, by providing a frame having a smaller thermal expansion coefficient than the metal body, the generation of thermal stress due to the difference in the thermal expansion coefficient between the electronic component and the metal body is suppressed, and cracks and cracks may occur in the electronic component. It is possible to provide a circuit board that is effectively prevented and has excellent long-term reliability.

（ａ）は、本発明の電子装置の実施の形態の一例を示す平面図であり、（ｂ）は、（ａ）のＸ−Ｘ線断面の一例を示す断面図である。(A) is a top view which shows an example of embodiment of the electronic device of this invention, (b) is sectional drawing which shows an example of the XX cross section of (a). （ａ）は図１（ｂ）のＡ部の一例を示す要部拡大断面図であり、（ｂ）は（ａ）のＸ−Ｘ線断面の一例を示す断面図である。(A) is a principal part expanded sectional view which shows an example of the A section of FIG.1 (b), (b) is sectional drawing which shows an example of the XX sectional view of (a). 本発明の電子装置の実施の形態の他の例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the other example of embodiment of the electronic device of this invention. 本発明の電子装置の実施の形態の他の例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the other example of embodiment of the electronic device of this invention. 本発明の電子装置の実施の形態の他の例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the other example of embodiment of the electronic device of this invention. 本発明の電子装置の実施の形態の他の例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the other example of embodiment of the electronic device of this invention. 本発明の電子装置の実施の形態の他の例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the other example of embodiment of the electronic device of this invention. 本発明の電子装置の実施の形態の他の例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the other example of embodiment of the electronic device of this invention. 本発明の電子装置の実施の形態の他の例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows the other example of embodiment of the electronic device of this invention. 本発明の電子装置の実施の形態の他の例を示す断面図である。It is sectional drawing which shows the other example of embodiment of the electronic device of this invention.

本発明の回路基板および電子装置について添付の図面を参照しつつ詳細に説明する。図１〜図10に示す例において、１は絶縁基板、２，２ａはろう材、３は絶縁基板１の下面に貫通孔を塞ぐように取着された金属板、４は絶縁基板１の上面に取着された金属回路板、５は金属板３に下端部が接合されている金属体、６は内面が金属体の側面に接合された枠体である。図１に示す例では、ろう材２によって複数の金属回路板４が絶縁基板１の上面に接合され、絶縁基板１の下面には金属板３が接合されている。絶縁基板１には上下に貫通する貫通孔が設けられており、枠体６の内側には金属体５が配置され、枠体６の内面と金属体５の側面とが接合されている。そして、金属体５と枠体６とからなる複合体の下面は、絶縁基板１の下面に位置する金属板３に、ろう材２を介してそれぞれ接合されて回路基板10が構成されている。この回路基板10の複合体の上面にある搭載部にダイボンド材７を介して電子部品20を搭載し、電子部品20を複数のボンディングワイヤ８によって金属回路板４に電気的に接続して電子装置を構成した例を示している。   The circuit board and electronic device of the present invention will be described in detail with reference to the accompanying drawings. 1 to 10, 1 is an insulating substrate, 2 and 2a are brazing materials, 3 is a metal plate attached to the lower surface of the insulating substrate 1 so as to block the through holes, and 4 is an upper surface of the insulating substrate 1. The metal circuit board 5 attached to the metal plate 5 is a metal body whose lower end is joined to the metal plate 3, and 6 is a frame body whose inner surface is joined to the side surface of the metal body. In the example shown in FIG. 1, a plurality of metal circuit boards 4 are bonded to the upper surface of the insulating substrate 1 by the brazing material 2, and the metal plate 3 is bonded to the lower surface of the insulating substrate 1. A through-hole penetrating vertically is provided in the insulating substrate 1, a metal body 5 is disposed inside the frame body 6, and an inner surface of the frame body 6 and a side surface of the metal body 5 are joined. Then, the lower surface of the composite composed of the metal body 5 and the frame body 6 is joined to the metal plate 3 positioned on the lower surface of the insulating substrate 1 via the brazing material 2 to constitute the circuit board 10. The electronic component 20 is mounted on the mounting portion on the upper surface of the composite of the circuit board 10 via the die bonding material 7, and the electronic component 20 is electrically connected to the metal circuit board 4 by a plurality of bonding wires 8. The example which comprised is shown.

本発明の回路基板10は、図１（ａ），（ｂ）に示す例のように、貫通孔を有する絶縁基板１と、絶縁基板１の下面に貫通孔を塞ぐように取着されている金属板３と、絶縁基板１の上面に取着されている金属回路板４と、少なくとも一部分が貫通孔内に配置されて金属板３に下端部が接合されている金属体５と、少なくとも金属体５の上端部の側面を囲むように内面が金属体５の側面に接合されている、金属体５よりも小さい熱膨張係数を有する枠体６とを備えており、金属体５と枠体６とが接合されてなる複合体の上面に電子部品20が搭載される搭載部を有していることを特徴とするものである。このような構成としたことから、例えば銅またはアルミニウム等の熱伝導率の高い材料（銅の熱伝導率：395Ｗ／
ｍ・Ｋ、アルミニウムの熱伝導率：240Ｗ／ｍ・Ｋ）を金属体５に用いると、電子部品20
と絶縁基板１の下面の金属板３との間には高熱伝導率の金属体５のみからなる伝熱経路が形成されるので、電子部品20から発生する熱を効率よく外部に放散することが可能となる。また、電子部品20から発生する熱を効率よく外部に放散できるため、この熱による電子部品20の誤動作あるいは破壊を防止することが可能となる。また、金属体５よりも熱膨張係数の小さい枠体６を備えることによって、電子部品20と金属体５との熱膨張係数の差による熱応力の発生が抑制され、電子部品20にクラックや割れが発生することが有効に防止され、長期信頼性に優れた回路基板10を提供することが可能となる。 The circuit board 10 of the present invention is attached so as to block the through hole on the lower surface of the insulating substrate 1 and the insulating substrate 1 as shown in FIGS. 1A and 1B. A metal plate 3, a metal circuit plate 4 attached to the upper surface of the insulating substrate 1, a metal body 5 having at least a portion disposed in the through hole and having a lower end joined to the metal plate 3, and at least a metal A frame body 6 having an inner surface joined to the side surface of the metal body 5 so as to surround the side surface of the upper end portion of the body 5 and having a smaller thermal expansion coefficient than the metal body 5, and the metal body 5 and the frame body 6 is provided with a mounting portion on which the electronic component 20 is mounted on the upper surface of the composite formed by joining together. Because of this configuration, for example, a material having high thermal conductivity such as copper or aluminum (thermal conductivity of copper: 395 W /
If m · K, aluminum thermal conductivity: 240 W / m · K) is used for the metal body 5, the electronic component 20
And a metal plate 3 on the lower surface of the insulating substrate 1 is formed with a heat transfer path consisting of only the metal body 5 having high thermal conductivity, so that heat generated from the electronic component 20 can be efficiently dissipated to the outside. It becomes possible. Further, since the heat generated from the electronic component 20 can be efficiently dissipated to the outside, it is possible to prevent malfunction or destruction of the electronic component 20 due to this heat. Further, by providing the frame body 6 having a smaller thermal expansion coefficient than the metal body 5, the generation of thermal stress due to the difference in the thermal expansion coefficient between the electronic component 20 and the metal body 5 is suppressed, and the electronic component 20 is cracked or cracked. It is possible to provide the circuit board 10 that is effectively prevented from occurring and has excellent long-term reliability.

なお、銅−タングステンからなる金属体はタングステン粉体を所定温度にて焼結させたタングステン焼結体に溶融銅を含浸させることによって製作されたものであり、銅とタングステンがほぼ均一に混在する構造のものであった。そのため、銅とタングステンの比率によって絶縁基板と金属柱との間の熱膨張係数の差を小さくすることはできるものの、熱伝導率は約200Ｗ／ｍ・Ｋと銅（熱伝導率：395Ｗ／ｍ・Ｋ）等と比べるとあまり大きいとは言えるものではない。   The metal body composed of copper-tungsten is manufactured by impregnating molten copper into a tungsten sintered body obtained by sintering tungsten powder at a predetermined temperature, and copper and tungsten are mixed almost uniformly. It was of structure. Therefore, although the difference in thermal expansion coefficient between the insulating substrate and the metal column can be reduced by the ratio of copper and tungsten, the thermal conductivity is about 200 W / m · K and copper (thermal conductivity: 395 W / m・ It cannot be said that it is much larger than K).

絶縁基板１は、略四角形状であり、金属板３および金属回路板４を支持する支持部材として機能する。絶縁基板１は電気絶縁材料からなり、例えば、酸化アルミニウム質セラミックス，ムライト質セラミックス，炭化ケイ素質セラミックス，窒化アルミニウム質セラミックス，または窒化ケイ素質セラミックス等のセラミックスからなる。これらセラミック材料の中では放熱性に影響する熱伝導性の点に関して、炭化ケイ素質セラミックス，窒化アルミニウム質セラミックス，または窒化ケイ素質セラミックスが好ましく、強度の点に関して、窒化ケイ素質セラミックスまたは炭化ケイ素質セラミックスが好ましい。絶縁基板１が窒化ケイ素質セラミックスのように比較的強度の高いセラミック材料からなる場合、より厚みの大きい金属板３および金属回路板４を用いたとしても絶縁基板１にクラックが入る可能性が低減されるので、小型化を図りつつより大きな電流を流すことができる回路基板10を実現することができる。   The insulating substrate 1 has a substantially rectangular shape and functions as a support member that supports the metal plate 3 and the metal circuit plate 4. The insulating substrate 1 is made of an electrically insulating material, for example, ceramic such as aluminum oxide ceramics, mullite ceramics, silicon carbide ceramics, aluminum nitride ceramics, or silicon nitride ceramics. Among these ceramic materials, silicon carbide ceramics, aluminum nitride ceramics, or silicon nitride ceramics are preferred in terms of thermal conductivity that affects heat dissipation, and silicon nitride ceramics or silicon carbide ceramics in terms of strength. Is preferred. When the insulating substrate 1 is made of a relatively strong ceramic material such as silicon nitride ceramics, the possibility of cracking in the insulating substrate 1 is reduced even when the thicker metal plate 3 and metal circuit plate 4 are used. Therefore, it is possible to realize the circuit board 10 capable of flowing a larger current while achieving downsizing.

絶縁基板１の厚みは、薄い方が熱伝導性の点ではよく、例えば約0.1ｍｍ〜１ｍｍであ
り、回路基板10の大きさや用いる材料の熱伝導率や強度に応じて選択すればよい。 The thinner insulating substrate 1 may be in terms of thermal conductivity, for example, about 0.1 mm to 1 mm, and may be selected according to the size of the circuit board 10 and the thermal conductivity and strength of the material used.

絶縁基板１は、例えば窒化ケイ素質セラミックスからなる場合であれば、窒化ケイ素，酸化アルミニウム，酸化マグネシウム，および酸化イットリウム等の原料粉末に適当な有機バインダー，可塑剤，および溶剤を添加混合して泥漿物に従来周知のドクターブレード法やカレンダーロール法を採用することによってセラミックグリーンシート（セラミック生シート）を形成し、次にこのセラミックグリーンシートに適当な打ち抜き加工を施して所定形状となすとともに、必要に応じて複数枚を積層して成形体となし、しかる後、これを窒化雰囲気等の非酸化性雰囲気にて1,600〜2,000℃の温度で焼成することによって製作される。   If the insulating substrate 1 is made of, for example, silicon nitride ceramics, an appropriate organic binder, plasticizer, and solvent are added to and mixed with raw material powders such as silicon nitride, aluminum oxide, magnesium oxide, and yttrium oxide, and then mixed with slurry. A ceramic green sheet (ceramic green sheet) is formed by adopting the doctor blade method and calendar roll method, which are well-known in the past, and then the ceramic green sheet is punched appropriately to form a predetermined shape. According to the above, a plurality of sheets are laminated to form a molded body, and thereafter, this is fired at a temperature of 1,600 to 2,000 ° C. in a non-oxidizing atmosphere such as a nitriding atmosphere.

絶縁基板１は、金属体５および枠体６が配置される貫通孔を有している。この貫通孔は、上記のセラミックグリーンシートに金型による打ち抜き加工等によってあらかじめ孔加
工しておくことで形成することができる。このとき、貫通孔の形状は、内部に配置する金属体５および枠体６の外形形状に沿った形状とすればよいが、図２（ｂ）に示す例のように、例えば四角形状である場合には、その角部を丸めた形状とするのが好ましい。このようにすることで、絶縁基板１と金属体５および枠体６との熱膨脹差に起因する応力によって角部からクラックが発生する可能性を低減することができる。 The insulating substrate 1 has a through hole in which the metal body 5 and the frame body 6 are disposed. This through hole can be formed by punching the ceramic green sheet in advance by punching with a mold or the like. At this time, the shape of the through-hole may be a shape along the outer shape of the metal body 5 and the frame body 6 disposed inside, but is, for example, a quadrangular shape as in the example shown in FIG. In some cases, it is preferable to round the corners. By doing in this way, possibility that a crack will generate | occur | produce from a corner | angular part by the stress resulting from the thermal expansion difference of the insulated substrate 1, the metal body 5, and the frame 6 can be reduced.

ろう材２は、金属板３および金属回路板４ならびに金属体５を絶縁基板１に接合する接合材としての機能を有する。   The brazing material 2 has a function as a bonding material for bonding the metal plate 3, the metal circuit plate 4, and the metal body 5 to the insulating substrate 1.

ろう材２用のろう材ペーストは、例えば金属板３および金属回路板４が銅からなる場合、銀および銅粉末，銀−銅合金粉末，またはこれらの混合粉末からなる銀ろう材（例えば、銀：72質量％−銅：28質量％）粉末に、チタン，ハフニウム，ジルコニウムまたはその水素化物等の活性金属を銀ろう材に対して２〜５質量％添加混合し、適当なバインダーと有機溶剤および溶媒とを添加混合し、混練することによって製作される。銀ろう材の接合温度は780℃〜900℃であり、接合温度またはろう材の硬度を低下させる目的でインジウム（Ｉｎ）またはスズ（Ｓｎ）を１〜10質量％程度添加しても良い。   For example, when the metal plate 3 and the metal circuit board 4 are made of copper, the brazing material paste for the brazing material 2 is a silver brazing material made of silver and copper powder, silver-copper alloy powder, or a mixed powder thereof (for example, silver : 72% by mass-copper: 28% by mass) 2-5% by mass of active metal such as titanium, hafnium, zirconium or hydride thereof is added to and mixed with the powder, and a suitable binder, organic solvent, and It is manufactured by adding and mixing a solvent and kneading. The bonding temperature of the silver brazing material is 780 ° C. to 900 ° C., and indium (In) or tin (Sn) may be added in an amount of about 1 to 10% by mass for the purpose of reducing the bonding temperature or the hardness of the brazing material.

ろう材２用のろう材ペーストは、例えば金属板３および金属回路板４がアルミニウムからなる場合は、銀ろう材に替えてアルミニウムろう材（例えば、アルミニウム：88質量％−シリコン：12質量％）を用いればよい。この場合も同様にして活性金属入りろう材ペーストを作製して、同様にして接合すればよい。アルミニウムろう材を使用した場合には、銀ろう材より低温の約600℃で接合することができる。   For example, when the metal plate 3 and the metal circuit board 4 are made of aluminum, an aluminum brazing material (for example, aluminum: 88 mass% -silicon: 12 mass%) is used instead of the silver brazing material. May be used. In this case as well, a brazing material paste containing an active metal may be produced in the same manner and bonded in the same manner. When an aluminum brazing material is used, bonding can be performed at about 600 ° C., which is lower than the silver brazing material.

金属板３は、絶縁基板１の下面に取着され、電子部品20から発生する熱を伝えるための伝熱板として機能する。金属回路板４は、絶縁基板１の上面に取着され、複数のボンディングワイヤ８によって電子部品20に電気的に接続される。   The metal plate 3 is attached to the lower surface of the insulating substrate 1 and functions as a heat transfer plate for transferring heat generated from the electronic component 20. The metal circuit board 4 is attached to the upper surface of the insulating substrate 1 and is electrically connected to the electronic component 20 by a plurality of bonding wires 8.

金属板３および金属回路板４は、銅またはアルミニウム等の金属から成り、例えば銅のインゴット（塊）に圧延加工法または打ち抜き加工法等の機械的加工、またはエッチング等の化学的加工のような金属加工法を施すことによって、例えば厚さが0.05〜１ｍｍの平板状で所定パターンに形成される。絶縁基板１の上面の金属回路板４は、絶縁基板１と同程度の大きさおよび形状の金属部材を絶縁基板１に接合した後にエッチングで所定パターン形状に加工すると、高精度で精細なパターンを形成できるようになる。絶縁基板１の下面の金属板３は、図１（ｂ）に示す例のように、絶縁基板１の下面のほぼ全面に形成され、回路基板10に搭載された電子部品20の放熱性を高めるようにするのが好ましい。   The metal plate 3 and the metal circuit board 4 are made of a metal such as copper or aluminum. For example, a mechanical process such as a rolling process or a punching process or a chemical process such as etching is performed on a copper ingot. By applying a metal processing method, for example, a flat plate having a thickness of 0.05 to 1 mm is formed into a predetermined pattern. When the metal circuit board 4 on the upper surface of the insulating substrate 1 is processed into a predetermined pattern shape by etching after joining a metal member having the same size and shape as the insulating substrate 1 to the insulating substrate 1, a highly precise and fine pattern is formed. It becomes possible to form. The metal plate 3 on the lower surface of the insulating substrate 1 is formed on almost the entire lower surface of the insulating substrate 1 as in the example shown in FIG. 1B, and improves the heat dissipation of the electronic component 20 mounted on the circuit board 10. It is preferable to do so.

金属板３および金属回路板４が銅からなる場合は、無酸素銅によって形成されていることが好ましい。無酸素銅によって形成されていると、金属板３，金属回路板４と絶縁基板１または複合体との接合を行なう際に、銅の表面が銅中に存在する酸素によって酸化されることが低減され、ろう材２との濡れ性が良好となるので、金属板３および金属回路板４と絶縁基板１または複合体との接合強度が向上される。   When the metal plate 3 and the metal circuit board 4 are made of copper, it is preferably formed of oxygen-free copper. When formed of oxygen-free copper, when the metal plate 3, the metal circuit board 4 and the insulating substrate 1 or the composite are joined, the copper surface is reduced from being oxidized by oxygen present in the copper. In addition, since the wettability with the brazing material 2 is improved, the bonding strength between the metal plate 3 and the metal circuit board 4 and the insulating substrate 1 or the composite is improved.

金属板３および金属回路板４となる金属部材と絶縁基板１との接合は、金属部材および絶縁基板１の少なくとも一方における接合面にスクリーン印刷等でろう材ペーストを例えば30〜50μｍの厚さで所定パターンに印刷塗布して、所定の構造となるように金属部材によって絶縁基板１を挟んだ後、金属部材に５〜10ｋＰａの荷重をかけながら真空中または非酸化性雰囲気中で780℃〜900℃、10〜120分間加熱し、ろう材ペーストの有機溶剤，溶
媒および分散剤を気体に変えて発散させるとともに、ろう材２を溶融させることによって行なわれる。 The metal member to be the metal plate 3 and the metal circuit board 4 and the insulating substrate 1 are bonded to the insulating surface of at least one of the metal member and the insulating substrate 1 with a brazing material paste having a thickness of, for example, 30 to 50 μm by screen printing or the like. After printing and applying to a predetermined pattern and sandwiching the insulating substrate 1 with a metal member so as to have a predetermined structure, 780 ° C. to 900 ° C. in a vacuum or in a non-oxidizing atmosphere while applying a load of 5 to 10 kPa on the metal member It is carried out by heating at 10 ° C. for 10 to 120 minutes to change the organic solvent, solvent and dispersing agent of the brazing filler metal into a gas to emit gas and to melt the brazing filler metal 2.

金属部材を絶縁基板１に接合した後に、金属部材をエッチングによって金属板３および金属回路板４の所定パターン形状に加工する場合は、例えば以下のようにする。絶縁基板１の上に接合された金属部材の表面にエッチングレジストインクをスクリーン印刷法等の技術を用いて所定パターン形状に印刷塗布してレジスト膜を形成した後、例えば金属部材が銅板である場合であれば、塩化第２鉄または塩化第２銅溶液等のエッチング液に浸漬したり、エッチング液を吹き付けたりして金属板３および金属回路板４の所定パターン以外の部分を除去し、その後にレジスト膜を除去すればよい。金属部材がアルミニウムからなる場合、エッチング液の例は、リン酸、硝酸、酢酸および水を含む混酸である。   When the metal member is bonded to the insulating substrate 1 and then processed into a predetermined pattern shape of the metal plate 3 and the metal circuit board 4 by etching, for example, the following is performed. When a resist film is formed by applying an etching resist ink to a surface of a metal member bonded onto the insulating substrate 1 in a predetermined pattern shape using a technique such as a screen printing method, and then, for example, the metal member is a copper plate If so, the part other than the predetermined pattern of the metal plate 3 and the metal circuit board 4 is removed by immersing in an etching solution such as ferric chloride or cupric chloride solution or spraying the etching solution. The resist film may be removed. When the metal member is made of aluminum, an example of the etchant is a mixed acid containing phosphoric acid, nitric acid, acetic acid, and water.

ここで、金属回路板４を所定パターン形状に加工する場合に、絶縁基板１の貫通孔内にはエッチング液が進入するが、金属板３となる金属部材の貫通孔内にあたる部分に予め銅に比べてエッチングされにくい高熱伝導材料、例えば銀ろう材を形成しておくことで、金属板３の貫通孔内の部位がエッチング液で侵食されることを防ぐことができる。   Here, when the metal circuit board 4 is processed into a predetermined pattern shape, the etching solution enters the through hole of the insulating substrate 1, but the portion corresponding to the through hole of the metal member to be the metal plate 3 is previously coated with copper. By forming a highly heat-conductive material that is harder to be etched, for example, a silver brazing material, it is possible to prevent a portion in the through hole of the metal plate 3 from being eroded by the etching solution.

金属体５は、絶縁基板１に形成された貫通孔内に配置され、絶縁基板１の下面に取着された金属板３に下端部が接合されている。金属体５は、電子部品20に大電流が流れて大量の熱が発生した際の電子部品20からの熱を外部に放熱する機能を有する。   The metal body 5 is disposed in a through-hole formed in the insulating substrate 1, and a lower end portion is bonded to the metal plate 3 attached to the lower surface of the insulating substrate 1. The metal body 5 has a function of radiating heat from the electronic component 20 to the outside when a large current flows through the electronic component 20 and a large amount of heat is generated.

金属体５の材料は、放熱性の観点から、熱伝導率の高い金属材料が用いられ、例えば銅やアルミニウム等の高熱伝導率の金属材料が好適に用いられる（銅の熱伝導率：395Ｗ／
ｍ・Ｋ、アルミニウムの熱伝導率：240Ｗ／ｍ・Ｋ）。 As the material of the metal body 5, a metal material having high thermal conductivity is used from the viewpoint of heat dissipation, and for example, a metal material having high thermal conductivity such as copper or aluminum is preferably used (thermal conductivity of copper: 395 W /
m · K, thermal conductivity of aluminum: 240 W / m · K).

金属体５の平面視の形状は、四角形等の多角形状や円形状である。金属体５は、例えば、銅からなる場合、銅のインゴット（塊）に圧延加工法や打ち抜き加工法、引き抜き加工法等、従来周知の金属加工法を施すことによって所定形状に形成される。   The shape of the metal body 5 in a plan view is a polygonal shape such as a quadrangle or a circular shape. For example, when the metal body 5 is made of copper, the metal body 5 is formed into a predetermined shape by subjecting a copper ingot (lumb) to a conventionally known metal processing method such as a rolling method, a punching method, or a drawing method.

枠体６は、少なくとも金属体５の上端部の側面を囲むように内面が金属体５の側面に接合されており金属体５よりも小さい熱膨張係数を有する。   The inner surface of the frame body 6 is joined to the side surface of the metal body 5 so as to surround at least the side surface of the upper end portion of the metal body 5, and has a smaller thermal expansion coefficient than the metal body 5.

枠体６が金属材料からなる場合であれば、例えばニッケル（Ｎｉ），鉄（Ｆｅ），モリブデン（Ｍｏ），タングステン（Ｗ），クロム（Ｃｒ），チタン（Ｔｉ）等が挙げられ、これらを含む合金であってもよい。例えば、Ｃｕ−Ｗ合金であってもよい。これら金属材料の中では熱伝導性（放熱性）の観点からはモリブデン（Ｍｏ），タングステン（Ｗ），クロム（Ｃｒ）が好ましい。枠体６が金属材料からなる場合、枠体６は、例えば枠体６の厚みの金属部材をプレスやエッチング等の従来周知の方法で加工することで作製することができる。枠体６がＣｕ−Ｗ合金からからなる場合であれば、Ｗ粉末を焼結させて粉体間の隙間に溶融したＣｕを含浸させる方法で作製することができ、所定形状への加工は、Ｃｕ−Ｗ合金を切削加工するなどしてもよいし、Ｗ粉末の焼結体を作製する際に所定形状の型を用いてもよい。   In the case where the frame 6 is made of a metal material, for example, nickel (Ni), iron (Fe), molybdenum (Mo), tungsten (W), chromium (Cr), titanium (Ti), etc. may be mentioned. An alloy may be included. For example, a Cu-W alloy may be used. Among these metal materials, molybdenum (Mo), tungsten (W), and chromium (Cr) are preferable from the viewpoint of thermal conductivity (heat dissipation). When the frame body 6 is made of a metal material, the frame body 6 can be manufactured by processing a metal member having a thickness of the frame body 6 by a conventionally known method such as pressing or etching, for example. If the frame 6 is made of a Cu-W alloy, it can be produced by a method in which W powder is sintered and impregnated with molten Cu in the gaps between the powders. A Cu—W alloy may be cut, or a mold having a predetermined shape may be used when producing a sintered body of W powder.

枠体６がセラミック材料からなる場合であれば、例えば酸化アルミニウム質セラミックス，ムライト質セラミックス，炭化ケイ素質セラミックス，窒化アルミニウム質セラミックス，窒化ケイ素質セラミックス等が挙げられる。これらセラミック材料の中では熱伝導性（放熱性）の観点からは炭化ケイ素質セラミックス，窒化アルミニウム質セラミックス，または窒化ケイ素質セラミックスが好ましく、強度の点からは窒化ケイ素質セラミックスまたは炭化ケイ素質セラミックスが好ましい。枠体６がセラミック材料からなる場合、枠体５は絶縁基板１と同様にしてグリーンシート積層体を作製したのちに所定形状に加工しておくことで作製することができる。あるいは、原料粉末と有機バインダーを加えたものを所定形状の型を用いて生成型体を作製してこれを焼成することによって作製してもよい。   When the frame 6 is made of a ceramic material, examples thereof include aluminum oxide ceramics, mullite ceramics, silicon carbide ceramics, aluminum nitride ceramics, and silicon nitride ceramics. Among these ceramic materials, silicon carbide ceramics, aluminum nitride ceramics, or silicon nitride ceramics are preferable from the viewpoint of thermal conductivity (heat dissipation), and silicon nitride ceramics or silicon carbide ceramics are preferable from the viewpoint of strength. preferable. When the frame 6 is made of a ceramic material, the frame 5 can be produced by producing a green sheet laminate in the same manner as the insulating substrate 1 and then processing it into a predetermined shape. Or you may produce by making a production | generation type | mold body using the mold | die of a predetermined shape, and baking this what added raw material powder and the organic binder.

枠体６の形状は、少なくとも金属体５の上端部の側面を囲むように内面が金属体５の側面に接合されることから、金属体５の平面視形状の穴を有する枠状のものである。   The shape of the frame 6 is a frame-like shape having a hole in the shape of a plan view of the metal body 5 because the inner surface is joined to the side surface of the metal body 5 so as to surround at least the side surface of the upper end portion of the metal body 5. is there.

本発明の回路基板10は、電子部品20が、金属体５の上面と枠体６の上面とを跨ぐように金属体５と枠体６との複合体の上面内に位置してよいが、図２に示す例のように、上記構成において、金属体５の上面が電子部品20の搭載領域よりも大きいことが好ましい。言い換えると、電子部品20が搭載される搭載部は複合体の上面のうち金属体５の上面内に位置することが好ましい。このような構成としたときには、金属体５の上面が電子部品20の搭載領域よりも大きいことで電子部品20で発生した熱は横方向へも拡散しながら金属体５へ伝わるようになるので、金属体５を介してより効率よく放熱することが可能となる。   The circuit board 10 of the present invention may be located in the upper surface of the composite body of the metal body 5 and the frame body 6 so that the electronic component 20 straddles the upper surface of the metal body 5 and the upper surface of the frame body 6. As in the example shown in FIG. 2, in the above configuration, the upper surface of the metal body 5 is preferably larger than the mounting area of the electronic component 20. In other words, the mounting portion on which the electronic component 20 is mounted is preferably located within the upper surface of the metal body 5 in the upper surface of the composite. In such a configuration, since the upper surface of the metal body 5 is larger than the mounting area of the electronic component 20, the heat generated in the electronic component 20 is transferred to the metal body 5 while diffusing in the lateral direction. It becomes possible to radiate heat more efficiently through the metal body 5.

金属体５は、金属板３に接合した後に、その表面に導電性が高くかつ耐蝕性およびろう材との濡れ性が良好な金属をめっき法により被着させておくと、金属体５に半導体素子等の電子部品20を半田等のダイボンド材７を介して強固に接着させることができる。また、金属体５とともに金属板３や金属回路板４にも同様にその表面に導電性が高くかつ耐蝕性およびろう材との濡れ性が良好な金属をめっき法により被着させておくと、金属板３や金属回路板４と外部電気回路（図示せず）との電気的接続を良好なものとすることができる。この場合は、内部に燐を８〜15質量％含有させてニッケル−燐のアモルファス合金としておくと、ニッケルからなるめっき層の表面酸化を抑制してろう材との濡れ性等を長く維持することができるので好ましい。ニッケルに対する燐の含有量が８質量％以上15質量％以下であると、ニッケル−燐のアモルファス合金を形成しやすくなってめっき層に対する半田の接着強度を向上させることができる。このニッケルからなるめっき層は、その厚みが1.5μｍ以上であると、金属板３、金属回路板４、金属体５の表面を被覆しやすく、金
属板３、金属回路板４、金属体５の酸化腐蝕を抑制することができる。また、10μｍ以下であると、特に絶縁基板の厚さが300μｍ未満の薄いものになった場合には、めっき層の
内部に内在する内在応力を低減させることができ、金属板３および金属回路板４に生じる反り、およびそれによって生じる絶縁基板１の反りまたは割れ等を抑制することができる。 After the metal body 5 is bonded to the metal plate 3, a metal having high conductivity, corrosion resistance, and good wettability with the brazing material is deposited on the surface of the metal body 5 by plating. The electronic component 20 such as an element can be firmly bonded via the die bond material 7 such as solder. In addition, the metal plate 3 and the metal circuit board 4 together with the metal body 5 are similarly coated with a metal having high conductivity, corrosion resistance, and good wettability with the brazing material by plating. The electrical connection between the metal plate 3 or the metal circuit plate 4 and an external electric circuit (not shown) can be improved. In this case, if an amorphous alloy of nickel-phosphorus is prepared by containing 8 to 15% by mass of phosphorus inside, the surface oxidation of the plating layer made of nickel is suppressed and the wettability with the brazing material is maintained for a long time. Is preferable. When the phosphorus content relative to nickel is 8% by mass or more and 15% by mass or less, it is easy to form an amorphous alloy of nickel-phosphorus, and the adhesive strength of the solder to the plating layer can be improved. When the thickness of the nickel plating layer is 1.5 μm or more, the surface of the metal plate 3, the metal circuit plate 4, and the metal body 5 is easily covered. Oxidative corrosion can be suppressed. In addition, when the thickness is 10 μm or less, particularly when the thickness of the insulating substrate is as thin as less than 300 μm, it is possible to reduce the internal stress in the plating layer, and the metal plate 3 and the metal circuit plate 4 and the warp or cracking of the insulating substrate 1 caused thereby can be suppressed.

図３に示す例では、金属体５の外形と同じ外形の枠体６が金属体５の上端部の側面に接合されるよう、金属体５の上端部の周辺を切り欠いており、枠体６が、金属体５の上端部の側面を囲むように内面が金属体５の側面に接合されている。これにより、金属体５と枠体６の複合体の上面の熱膨脹係数が電子部品20の熱膨脹係数に近いものとなって、電子部品20にクラックや割れが発生することが有効に防止される。また、金属体５の下端部の熱膨脹係数が金属板３の熱膨脹係数に近いものとなって、接続信頼性が高いものとなる。   In the example shown in FIG. 3, the periphery of the upper end portion of the metal body 5 is notched so that the frame body 6 having the same outer shape as the metal body 5 is joined to the side surface of the upper end portion of the metal body 5. 6, the inner surface is joined to the side surface of the metal body 5 so as to surround the side surface of the upper end portion of the metal body 5. Thereby, the thermal expansion coefficient of the upper surface of the composite body of the metal body 5 and the frame body 6 becomes close to the thermal expansion coefficient of the electronic component 20, and it is effectively prevented that the electronic component 20 is cracked or cracked. Moreover, the thermal expansion coefficient of the lower end part of the metal body 5 becomes close to the thermal expansion coefficient of the metal plate 3, and the connection reliability is high.

図４に示す例では、枠体６の外面が貫通孔の内壁面にろう材２を介して接合され内面が金属体５の側面に接合されている。これにより、絶縁基板１と枠体６および金属体５との接続が強固となるとともに、金属体５と枠体６との複合体の熱膨脹係数が絶縁基板１および電子部品20の熱膨脹係数に近いものとなって、絶縁基板１および電子部品20と金属体５との熱膨張係数の差による熱応力の発生が抑制され、絶縁基板１にクラックや割れが発生することが有効に防止される。   In the example shown in FIG. 4, the outer surface of the frame body 6 is joined to the inner wall surface of the through hole via the brazing material 2, and the inner surface is joined to the side surface of the metal body 5. Thereby, the connection between the insulating substrate 1 and the frame body 6 and the metal body 5 is strengthened, and the thermal expansion coefficient of the composite body of the metal body 5 and the frame body 6 is close to the thermal expansion coefficient of the insulating substrate 1 and the electronic component 20. Thus, the generation of thermal stress due to the difference in thermal expansion coefficient between the insulating substrate 1 and the electronic component 20 and the metal body 5 is suppressed, and the occurrence of cracks and cracks in the insulating substrate 1 is effectively prevented.

図５に示す例は、金属板３と金属体５との接合に金属板３と絶縁基板１との接合に用いるろう材２とは異なるろう材２ａを用いた例である。例えば、活性金属を含まないろう材２ａを用いる場合は、活性金属を含有するろう材２に比べてわずかではあるが熱伝導率が高いので、電子部品20で発生した熱の金属体５および枠体６の複合体を介しての放熱性がより向上するので好ましい。活性金属を含有するろう材２を用いると、その製造工程がより簡略化されるので好ましい。また、ろう材２ａとして、金属板３と絶縁基板１と接続し
ているろう材２より融点の低いろう材２ａを用いて金属板３と金属体５とを接続する場合には、予め接続している金属板３や金属回路板４がずれることなく後から金属体５を接続できるので工程の自由度が増え好ましい。 The example shown in FIG. 5 is an example in which a brazing material 2 a different from the brazing material 2 used for joining the metal plate 3 and the insulating substrate 1 is used for joining the metal plate 3 and the metal body 5. For example, when the brazing material 2a containing no active metal is used, the thermal conductivity is slightly higher than that of the brazing material 2 containing the active metal. Since the heat dissipation through the composite body 6 is further improved, it is preferable. Use of the brazing filler metal 2 containing an active metal is preferable because the manufacturing process is further simplified. Further, when the metal plate 3 and the metal body 5 are connected using the brazing material 2a having a melting point lower than that of the brazing material 2 connected to the metal plate 3 and the insulating substrate 1 as the brazing material 2a, the connection is made in advance. Since the metal body 5 can be connected later without the metal plate 3 and the metal circuit board 4 being displaced, the degree of freedom in the process is increased, which is preferable.

活性金属を含まないろう材２ａに用いられるろう材ペーストは、例えば金属板３および金属回路板４が銅からなる場合、銀および銅粉末，銀−銅合金粉末，またはこれらの混合粉末からなる銀ろう材（例えば、銀：72質量％−銅：28質量％）粉末に、適当なバインダーと有機溶剤および溶媒とを添加混合し、混練することによって製作される。また、例えば金属板３および金属回路板４がアルミニウムからなる場合は、銀ろう材に替えてアルミニウムろう材（例えば、アルミニウム：88質量％−シリコン：12質量％）を用いればよい。   For example, when the metal plate 3 and the metal circuit board 4 are made of copper, the brazing material paste used for the brazing material 2a containing no active metal is silver and a copper powder, a silver-copper alloy powder, or a mixed powder thereof. A brazing material (for example, silver: 72% by mass-copper: 28% by mass) is prepared by adding and mixing a suitable binder, an organic solvent and a solvent, and kneading. For example, when the metal plate 3 and the metal circuit board 4 are made of aluminum, an aluminum brazing material (for example, aluminum: 88% by mass—silicon: 12% by mass) may be used instead of the silver brazing material.

図６に示す例では、金属体５の縦断面形状は、金属体５の側面が下側に漸次広がるような台形状である。図７に示す例は、枠体６の外面も金属体５の側面に沿うように傾斜しており、図８に示す例は、金属体５の側面および枠体６の内面に、金属体５と枠体６とがかみ合うような段差部がそれぞれ設けられている。図６〜８に示す例では、金属体５の横断面積が電子部品20の搭載部から離れるに従って漸次大きくなっていることから、電子部品20で発生した熱は、金属体５内において横方向にも拡散するので、下面の放熱用の金属板３へと伝熱し、さらには外部へと効率よく放熱するが可能となる。   In the example shown in FIG. 6, the vertical cross-sectional shape of the metal body 5 is a trapezoidal shape in which the side surface of the metal body 5 gradually spreads downward. In the example shown in FIG. 7, the outer surface of the frame body 6 is also inclined so as to follow the side surface of the metal body 5, and the example shown in FIG. 8 has the metal body 5 on the side surface of the metal body 5 and the inner surface of the frame body 6. Steps are provided so that the frame 6 and the frame 6 are engaged with each other. In the examples shown in FIGS. 6 to 8, since the cross-sectional area of the metal body 5 gradually increases as the distance from the mounting portion of the electronic component 20 increases, the heat generated in the electronic component 20 is laterally increased in the metal body 5. Therefore, heat can be transferred to the metal plate 3 for heat radiation on the lower surface, and can be efficiently radiated to the outside.

図６に示す例では、上方の絶縁基板１の上面側の方が熱膨脹係数の小さい枠体６の割合が多いので、金属体５と枠体６との複合体である放熱部材は、上側の方が熱膨脹係数が小さくなる。上側の金属体５の上端部には電子部品20が搭載され、電子部品20の熱膨脹係数は小さいので、電子部品20と対向する金属体５と枠体６との複合体の熱膨脹係数は小さい方が、上方の電子部品20と金属体５との接合信頼性は高いものとなる。また、金属体５と枠体６との複合体の下側は、下側の金属板３と熱膨脹係数が近くなるので、この間の接合信頼性も高いものとなる。   In the example shown in FIG. 6, since the upper surface side of the upper insulating substrate 1 has a higher proportion of the frame body 6 having a smaller coefficient of thermal expansion, the heat dissipation member that is a composite of the metal body 5 and the frame body 6 The thermal expansion coefficient becomes smaller. An electronic component 20 is mounted on the upper end portion of the upper metal body 5, and the thermal expansion coefficient of the electronic component 20 is small. Therefore, the thermal expansion coefficient of the composite of the metal body 5 and the frame body 6 facing the electronic component 20 is smaller. However, the bonding reliability between the upper electronic component 20 and the metal body 5 is high. Further, the lower side of the composite body of the metal body 5 and the frame body 6 has a thermal expansion coefficient close to that of the lower metal plate 3, so that the joint reliability between them is also high.

図７に示す例では、枠体６の内面および外面が平行に傾斜していることにより、枠体６の横方向の厚みが均一となり、枠体６とろう材２とを接合させた際、枠体６に作用する応力が均一となり、枠体６に部分的にクラックや割れが発生することを有効に防止することが可能となる。   In the example shown in FIG. 7, since the inner surface and the outer surface of the frame body 6 are inclined in parallel, the lateral thickness of the frame body 6 becomes uniform, and when the frame body 6 and the brazing material 2 are joined, The stress acting on the frame body 6 becomes uniform, and it is possible to effectively prevent the frame body 6 from being partially cracked or broken.

図８に示す例では、金属体５の側面および枠体６の内面に形成された段差部によって、金属体５と枠体６とがかみあうことにより、金属体５と枠体６との接合の際、容易に位置決めすることができ、金属体５と枠体６とを位置ずれなく強固に接合することが可能となる。   In the example shown in FIG. 8, the metal body 5 and the frame body 6 are engaged with each other by the stepped portion formed on the side surface of the metal body 5 and the inner surface of the frame body 6, thereby joining the metal body 5 and the frame body 6. At this time, the positioning can be easily performed, and the metal body 5 and the frame body 6 can be firmly joined without being displaced.

枠体６と金属体５との接合は、例えば、図９に示す例のように、接合材９を用いて行えばよい。接合材９に用いられる接合ペーストは、活性金属を含まないろう材２ａ用のろう材ペーストと同様のものを用いることができるが、ろう材組成や添加物を適宜調整することによって、溶融温度をろう材２の溶融温度より高くすることが好ましい。これにより、絶縁基板１に金属体５および枠体６を接合する際、接合材９の再溶融による金属体５と枠体６との位置ずれを低減することが可能となる。   What is necessary is just to perform joining of the frame 6 and the metal body 5 using the joining material 9, like the example shown in FIG. The bonding paste used for the bonding material 9 can be the same as the brazing material paste for the brazing material 2a that does not contain an active metal, but the melting temperature can be adjusted by appropriately adjusting the brazing material composition and additives. It is preferable that the temperature be higher than the melting temperature of the brazing material 2. As a result, when the metal body 5 and the frame body 6 are joined to the insulating substrate 1, it is possible to reduce misalignment between the metal body 5 and the frame body 6 due to remelting of the joining material 9.

金属体５と枠体６との接合は、接合材９用の接合ペーストを金属体５の側面にディスペンサー等の塗布装置を用いて塗布して乾燥させ、内面がこの接合ペーストに接するように枠体６を配置し、加熱して接合材９が溶融させることによって接合する。枠体６の内面に接合材９用の接合ペーストを塗布してもかまわない。   The metal body 5 and the frame body 6 are joined by applying a bonding paste for the bonding material 9 to the side surface of the metal body 5 by using a coating device such as a dispenser and drying the frame, so that the inner surface is in contact with the bonding paste. The body 6 is placed and heated to melt the bonding material 9 to bond. A bonding paste for the bonding material 9 may be applied to the inner surface of the frame 6.

接合材９用の接合ペーストは、枠体６がセラミック材料からなる場合、活性金属を含むろう材２用のろう材ペーストと同様のものを用いると、枠体６の内面にメタライズ層を形成する必要が無く、工程を短縮できるので好ましい。   When the frame 6 is made of a ceramic material, the bonding paste for the bonding material 9 forms a metallized layer on the inner surface of the frame 6 when the same paste as the brazing material paste for the brazing material 2 containing active metal is used. This is preferable because it is not necessary and the process can be shortened.

また、枠体６をＣｕ−Ｗ合金とし金属体５をＣｕとする場合であれば、枠体６の形状に形成したＷ粉末を焼結させて粉体間の隙間に溶融したＣｕを含浸させるとともに、枠の内部を溶融したＣｕで充填する方法でも作製することができる。   If the frame body 6 is a Cu-W alloy and the metal body 5 is Cu, the W powder formed in the shape of the frame body 6 is sintered and impregnated with molten Cu in the gaps between the powders. At the same time, it can also be produced by filling the inside of the frame with molten Cu.

また、常温で金属体５の外径を枠体６の内径より僅かに大きく作成し、金属体５を冷却して収縮させた状態で、あるいは、枠体６を加熱して膨張させ状態で、枠体６に金属体５はめ込むことによっても作製することもできる。   Further, the outer diameter of the metal body 5 is made slightly larger than the inner diameter of the frame body 6 at room temperature, and the metal body 5 is cooled and contracted, or the frame body 6 is heated and expanded, It can also be produced by fitting the metal body 5 into the frame body 6.

金属体５と枠体６の体積比率によって金属体５と枠体６との複合体の熱膨脹係数が定まる。よって、この複合体の熱膨脹係数が電子部品20の熱膨脹係数に近いものとなるようにすることで、電子部品20にクラックや割れを発生させる可能性を低減することができる。   The thermal expansion coefficient of the composite of the metal body 5 and the frame body 6 is determined by the volume ratio of the metal body 5 and the frame body 6. Therefore, by making the thermal expansion coefficient of the composite close to the thermal expansion coefficient of the electronic component 20, the possibility of causing cracks and cracks in the electronic component 20 can be reduced.

例えば、金属体５を直径が5.9ｍｍの銅（熱膨張係数：4.5×10-6／Ｋ、熱伝導率：395
Ｗ／ｍ・Ｋ）で作成した円柱形状とし、枠体６を内径が６ｍｍ、外形が10ｍｍのタングステン（熱膨張係数：4.5×10-6／Ｋ、熱伝導率：167Ｗ／ｍ・Ｋ）で作成した円筒形状として、接合材９として銀ろうを用いて接合した場合には、複合体の熱膨張係数はほぼ6.5×10-6／Ｋとなり、アルミナ質セラミックスの熱膨張係数とほぼ同じ熱膨張係数となる。こ
のときの複合体の熱伝導率は約250Ｗ／ｍ・Ｋとなる。従来のタングステン粉末の焼結体
に溶融した銅を含浸させることによって製作した複合体でも、銅とタングステンの割合が同じであれば、同様の熱伝導率となる。しかしながら、本発明のような構成の複合体であれば、上下の金属板３間には銅のみからなる金属体５が存在し、この部分の熱伝導率は395Ｗ／ｍ・Ｋと高いものであり、電子部品20で発生した熱はこの熱伝導率の高い金属体５
内を伝導するので、より放熱性の高いものとなる。 For example, the metal body 5 is made of copper having a diameter of 5.9 mm (thermal expansion coefficient: 4.5 × 10 −6 / K, thermal conductivity: 395
W / m · K), and the frame 6 is made of tungsten having an inner diameter of 6 mm and an outer diameter of 10 mm (thermal expansion coefficient: 4.5 × 10 −6 / K, thermal conductivity: 167 W / m · K). When the produced cylindrical shape is joined using silver brazing as the joining material 9, the thermal expansion coefficient of the composite is approximately 6.5 × 10 −6 / K, which is approximately the same as the thermal expansion coefficient of the alumina ceramics. It becomes a coefficient. The thermal conductivity of the composite at this time is about 250 W / m · K. Even in a composite manufactured by impregnating molten copper into a conventional sintered body of tungsten powder, the same thermal conductivity is obtained if the ratio of copper and tungsten is the same. However, in the case of the composite structure of the present invention, there is a metal body 5 made only of copper between the upper and lower metal plates 3, and the thermal conductivity of this portion is as high as 395 W / m · K. Yes, the heat generated in the electronic component 20 is the metal body 5 having a high thermal conductivity.
Since the inside is conducted, the heat dissipation is higher.

絶縁基体１の貫通孔と予め金属部材に形成された貫通孔とが平面視で重なるように絶縁基板１の上面に金属部材をろう材２で接合するときに、同時に絶縁基体１の貫通孔内の露出した金属板３に金属体５と枠体６との複合体をろう材２で接続する。もしくは、既に金属回路板４を形成済の絶縁基板１の貫通孔内の露出した金属板３に後から金属体５および枠体６の複合体をろう材２で接合することで、本発明の回路基板となる。   When the metal member is joined to the upper surface of the insulating substrate 1 with the brazing material 2 so that the through hole of the insulating base 1 and the through hole previously formed in the metal member overlap in plan view, at the same time, the inside of the through hole of the insulating base 1 A composite of the metal body 5 and the frame body 6 is connected to the exposed metal plate 3 by the brazing material 2. Alternatively, the composite of the metal body 5 and the frame body 6 is later joined to the exposed metal plate 3 in the through hole of the insulating substrate 1 on which the metal circuit board 4 has already been formed, by the brazing material 2. It becomes a circuit board.

本発明の電子装置は、図１（ａ），（ｂ）に示す例のように、上記構成の本発明の回路基板10と、回路基板10の金属体５と枠体６とが接合されてなる複合体の上面にある搭載部に搭載された電子部品20とを備えていることを特徴とするものである。このような構成としたことから、放熱性に優れ、絶縁基板１にクラックや割れが発生することが有効に防止された、長期信頼性に優れた電子装置を提供することが可能となる。   As shown in FIGS. 1A and 1B, the electronic device according to the present invention includes the circuit board 10 according to the present invention configured as described above, and the metal body 5 and the frame body 6 of the circuit board 10 joined together. And an electronic component 20 mounted on the mounting portion on the upper surface of the composite. With such a configuration, it is possible to provide an electronic device with excellent long-term reliability that is excellent in heat dissipation and effectively prevented from generating cracks or cracks in the insulating substrate 1.

電子部品20は、絶縁基板１の上面の金属体５と枠体６とが接合されてなる複合体の上面にある搭載部にダイボンド材７を介して固定されており、複数のボンディングワイヤ８によって金属回路板４に電気的に接続されている。ダイボンド材７は、例えば、金属接合材または導電性樹脂からなる。金属接合材は、例えば、半田、金−スズ（Ａｕ−Ｓｎ）合金、またはスズ−銀−銅（Ｓｎ−Ａｇ−Ｃｕ）合金等である。電子部品20は、例えば、トランジスタ、ＣＰＵ（Central Processing Unit）用のＬＳＩ（Large Scale Integrated circuit）、ＩＧＢＴ（Insulated Gate Bipolar Transistor）、またはＭＯＳ−ＦＥＴ（Metal Oxide Semiconductor - Field Effect Transistor）等の半導体素子である。   The electronic component 20 is fixed to the mounting portion on the upper surface of the composite body in which the metal body 5 and the frame body 6 on the upper surface of the insulating substrate 1 are joined via the die bonding material 7. It is electrically connected to the metal circuit board 4. The die bond material 7 is made of, for example, a metal bonding material or a conductive resin. The metal bonding material is, for example, solder, a gold-tin (Au—Sn) alloy, or a tin-silver-copper (Sn—Ag—Cu) alloy. The electronic component 20 is, for example, a semiconductor element such as a transistor, an LSI (Large Scale Integrated circuit) for a CPU (Central Processing Unit), an IGBT (Insulated Gate Bipolar Transistor), or a MOS-FET (Metal Oxide Semiconductor-Field Effect Transistor). It is.

図10は、本発明の電子装置の実施の形態の他の例を示す断面図である。図10に示す例は
、絶縁基板１に形成されたメタライズ層11を有する電子装置であり、具体的には、絶縁基板１の両面および貫通孔の内壁面に形成された複数のメタライズ層11を備えている。メタライズ層11は、焼成によって絶縁基板１と一体的に形成されている。 FIG. 10 is a cross-sectional view showing another example of the embodiment of the electronic device of the present invention. The example shown in FIG. 10 is an electronic device having a metallized layer 11 formed on an insulating substrate 1, and more specifically, a plurality of metallized layers 11 formed on both surfaces of the insulating substrate 1 and the inner wall surface of the through hole. I have. The metallized layer 11 is formed integrally with the insulating substrate 1 by firing.

絶縁基板１の下面に形成された金属板３および絶縁基板１の上面の複数の金属回路板４は、絶縁基板１の両面に形成されたメタライズ層11にろう材２を介してそれぞれ接合されている。回路基板10がメタライズ層11を有する場合、ろう材２は前述した活性金属を含まないものを用いることができる。   The metal plate 3 formed on the lower surface of the insulating substrate 1 and the plurality of metal circuit boards 4 on the upper surface of the insulating substrate 1 are respectively joined to the metallized layers 11 formed on both surfaces of the insulating substrate 1 via the brazing material 2. Yes. When the circuit board 10 has the metallized layer 11, the brazing material 2 that does not contain the above-described active metal can be used.

１・・・・・絶縁基板
２，２ａ・・ろう材
３・・・・・金属板
４・・・・・金属回路板
５・・・・・金属体
６・・・・・枠体
７・・・・・ダイボンド材
８・・・・・ボンディングワイヤ
９・・・・・接合材
10・・・・・回路基板
11・・・・・メタライズ層
20・・・・・電子部品 DESCRIPTION OF SYMBOLS 1 ... Insulation board 2, 2a ... Brazing material 3 ... Metal plate 4 ... Metal circuit board 5 ... Metal body 6 ... Frame body 7. ··· Die bond material 8 ··· Bonding wire 9 ··· Bonding material
10 Circuit board
11 ・ ・ ・ ・ ・ Metalized layer
20 ・ ・ ・ ・ ・ Electronic components

Claims (4)

貫通孔を有する絶縁基板と、該絶縁基板の下面に前記貫通孔を塞ぐように取着されている金属板と、前記絶縁基板の上面に取着されている金属回路板と、少なくとも一部分が前記貫通孔内に配置されて前記金属板に下端部が接合されている金属体と、少なくとも前記金属体の上端部の側面を囲むように内面が前記金属体の側面に接合されている、前記金属体よりも小さい熱膨張係数を有する枠体とを備えており、前記金属体と前記枠体とが接合されてなる複合体の上面に電子部品が搭載される搭載部を有していることを特徴とする回路基板。 An insulating substrate having a through hole; a metal plate attached to the lower surface of the insulating substrate so as to close the through hole; a metal circuit plate attached to the upper surface of the insulating substrate; A metal body disposed in a through hole and having a lower end joined to the metal plate, and an inner surface joined to the side of the metal body so as to surround at least the side of the upper end of the metal body A frame body having a smaller coefficient of thermal expansion than the body, and having a mounting portion on which an electronic component is mounted on the upper surface of the composite body formed by joining the metal body and the frame body. Feature circuit board. 前記搭載部は、前記複合体の上面のうち前記金属体の上面内に位置することを特徴とする請求項１記載の回路基板。 The circuit board according to claim 1, wherein the mounting portion is located in an upper surface of the metal body among upper surfaces of the composite body. 前記金属体は、上面から下面にかけて横断面積が大きくなっていることを特徴とする請求項１または請求項２記載の回路基板。 3. The circuit board according to claim 1, wherein a cross-sectional area of the metal body increases from an upper surface to a lower surface. 請求項１乃至請求項３のいずれかに記載の回路基板と、該回路基板の前記金属板に搭載された電子部品とを備えていることを特徴とする電子装置。 An electronic apparatus comprising: the circuit board according to claim 1; and an electronic component mounted on the metal plate of the circuit board.
JP2010283268A 2010-12-20 2010-12-20 Circuit board and electronic apparatus using the same Pending JP2012134230A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021019149A (en) * 2019-07-23 2021-02-15 三菱電機株式会社 Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59214245A (en) * 1983-05-20 1984-12-04 Nec Corp Semiconductor device
JPH08335782A (en) * 1995-06-07 1996-12-17 Nippondenso Co Ltd Multilayer board
JPH11191603A (en) * 1997-12-26 1999-07-13 Sanyo Electric Co Ltd Semiconductor integrated circuit and its manufacture

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59214245A (en) * 1983-05-20 1984-12-04 Nec Corp Semiconductor device
JPH08335782A (en) * 1995-06-07 1996-12-17 Nippondenso Co Ltd Multilayer board
JPH11191603A (en) * 1997-12-26 1999-07-13 Sanyo Electric Co Ltd Semiconductor integrated circuit and its manufacture

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021019149A (en) * 2019-07-23 2021-02-15 三菱電機株式会社 Semiconductor device
JP7262334B2 (en) 2019-07-23 2023-04-21 三菱電機株式会社 semiconductor equipment

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