JP2012072493A - スパッタリングターゲットおよび半導体装置の作製方法 - Google Patents
スパッタリングターゲットおよび半導体装置の作製方法 Download PDFInfo
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- JP2012072493A JP2012072493A JP2011187729A JP2011187729A JP2012072493A JP 2012072493 A JP2012072493 A JP 2012072493A JP 2011187729 A JP2011187729 A JP 2011187729A JP 2011187729 A JP2011187729 A JP 2011187729A JP 2012072493 A JP2012072493 A JP 2012072493A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 115
- 238000005477 sputtering target Methods 0.000 title claims abstract description 95
- 238000004519 manufacturing process Methods 0.000 title abstract description 13
- 238000004544 sputter deposition Methods 0.000 title description 12
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 21
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 21
- 239000001257 hydrogen Substances 0.000 claims abstract description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 18
- 239000011734 sodium Substances 0.000 claims description 12
- 239000011787 zinc oxide Substances 0.000 claims description 9
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 5
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- 229910003437 indium oxide Inorganic materials 0.000 claims description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 239000011591 potassium Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 33
- 239000012535 impurity Substances 0.000 abstract description 32
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract description 10
- 150000001342 alkaline earth metals Chemical class 0.000 abstract description 10
- 238000000151 deposition Methods 0.000 abstract 3
- 230000008021 deposition Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 38
- 238000010438 heat treatment Methods 0.000 description 24
- 239000000758 substrate Substances 0.000 description 21
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 18
- 150000001875 compounds Chemical class 0.000 description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000011701 zinc Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000002585 base Substances 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 239000013077 target material Substances 0.000 description 8
- 238000010304 firing Methods 0.000 description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- -1 moisture Chemical class 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910018137 Al-Zn Inorganic materials 0.000 description 2
- 229910018573 Al—Zn Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910020868 Sn-Ga-Zn Inorganic materials 0.000 description 2
- 229910020994 Sn-Zn Inorganic materials 0.000 description 2
- 229910009069 Sn—Zn Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000006356 dehydrogenation reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- VUFNLQXQSDUXKB-DOFZRALJSA-N 2-[4-[4-[bis(2-chloroethyl)amino]phenyl]butanoyloxy]ethyl (5z,8z,11z,14z)-icosa-5,8,11,14-tetraenoate Chemical compound CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC(=O)OCCOC(=O)CCCC1=CC=C(N(CCCl)CCCl)C=C1 VUFNLQXQSDUXKB-DOFZRALJSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910020833 Sn-Al-Zn Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000003211 malignant effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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Abstract
【解決手段】成膜に用いるスパッタリングターゲットの中の不純物であるアルカリ金属、アルカリ土類金属、及び水素を排除することにより得られる新規なスパッタリングターゲットを用いれば、これらの不純物の含有量の少ない酸化物半導体膜を成膜することができる。
【選択図】図1
Description
本実施の形態では、本発明の一態様であるスパッタリングターゲットの製造方法について図1を参照して説明する。図1は、本実施の形態に係るスパッタリングターゲットの製造方法の一例を示すフローチャートである。
101 下地膜
102 ゲート絶縁層
104a ソース電極層
104b ドレイン電極層
108a 第1の結晶性酸化物半導体膜
108b 第2の結晶性酸化物半導体膜
110a 絶縁膜
110b 絶縁膜
112 ゲート電極層
150 トランジスタ
850 バッキングプレート
851 スパッタリングターゲット
851a スパッタリングターゲット
851b スパッタリングターゲット
851c スパッタリングターゲット
851d スパッタリングターゲット
852 スパッタリングターゲット
852a スパッタリングターゲット
852b スパッタリングターゲット
852c スパッタリングターゲット
852d スパッタリングターゲット
852e スパッタリングターゲット
852f スパッタリングターゲット
852g スパッタリングターゲット
852h スパッタリングターゲット
852i スパッタリングターゲット
Claims (8)
- 酸化物半導体膜を形成するスパッタリングターゲットであって、酸化亜鉛、酸化アルミニウム、酸化ガリウム、酸化インジウム、または酸化スズから選ばれた少なくとも一の酸化物の焼結体を含み、SIMSにおける前記焼結体の含有アルカリ金属濃度が5×1016cm−3以下であることを特徴とするスパッタリングターゲット。
- 酸化物半導体膜を形成するスパッタリングターゲットであって、酸化亜鉛、酸化アルミニウム、酸化ガリウム、酸化インジウム、または酸化スズから選ばれた少なくとも一の酸化物の焼結体を含み、SIMSにおける前記焼結体の含有アルカリ金属濃度が5×1016cm−3以下であり、且つ、SIMSにおける前記焼結体の含有水素濃度が1×1019cm−3以下であることを特徴とするスパッタリングターゲット。
- 請求項1または請求項2において、前記焼結体のナトリウムの濃度は、1×1016cm−3以下であることを特徴とするスパッタリングターゲット。
- 請求項1または請求項2において、前記焼結体のナトリウムの濃度は、1×1015cm−3以下であることを特徴とするスパッタリングターゲット。
- 請求項1乃至4のいずれか一において、前記焼結体のリチウムの濃度は、5×1015cm−3以下であることを特徴とするスパッタリングターゲット。
- 請求項1乃至4のいずれか一において、前記焼結体のリチウムの濃度は、1×1015cm−3以下であることを特徴とするスパッタリングターゲット。
- 請求項1乃至6のいずれか一において、前記焼結体のカリウムの濃度は、5×1015cm−3以下であることを特徴とするスパッタリングターゲット。
- 請求項1乃至6のいずれか一において、前記焼結体のカリウムの濃度は、1×1015cm−3以下であることを特徴とするスパッタリングターゲット。
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TWI570808B (zh) | 2017-02-11 |
JP2017103462A (ja) | 2017-06-08 |
KR20130099074A (ko) | 2013-09-05 |
US9410239B2 (en) | 2016-08-09 |
JP2015187312A (ja) | 2015-10-29 |
TW201230202A (en) | 2012-07-16 |
JP5789157B2 (ja) | 2015-10-07 |
US20140370653A1 (en) | 2014-12-18 |
US8835214B2 (en) | 2014-09-16 |
JP6397878B2 (ja) | 2018-09-26 |
US8980686B2 (en) | 2015-03-17 |
US20120056176A1 (en) | 2012-03-08 |
WO2012029612A1 (en) | 2012-03-08 |
US20150252465A1 (en) | 2015-09-10 |
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