JP2012049764A5 - - Google Patents
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- JP2012049764A5 JP2012049764A5 JP2010189198A JP2010189198A JP2012049764A5 JP 2012049764 A5 JP2012049764 A5 JP 2012049764A5 JP 2010189198 A JP2010189198 A JP 2010189198A JP 2010189198 A JP2010189198 A JP 2010189198A JP 2012049764 A5 JP2012049764 A5 JP 2012049764A5
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- acoustic wave
- surface acoustic
- wave filter
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本発明は上記課題の少なくとも一部を解決するためになされたものであり、以下の形態または適用例として実現することが可能である。
本発明のある実施形態に係る弾性表面波フィルタは、オイラー角(−1.5°≦φ≦1.5°,117°≦θ≦142°,41.9°≦|ψ|≦49.57°)の水晶基板と、前記水晶基板上に設けられ、複数の電極指を備えるとともに、ストップバンド上端モードの弾性表面波を励振するIDTと、平面視で、前記電極指の間に位置する前記水晶基板の部分にある電極指間溝と、を有する弾性表面波共振子を複数接続させたディスクリート型の弾性表面波フィルタであって、前記弾性表面波の波長をλ、前記電極指間溝の深さをG、前記IDTのライン占有率をηとして、以下の数式1,2を満たすことを特徴とする。
本発明のある別の実施形態に係る弾性表面波フィルタは、前記IDTの電極膜厚をHとして、以下の数式4の関係を満たすことを特徴とする。
本発明のある別の実施形態に係る弾性表面波フィルタは、前記IDTにおけるストップバンド上端モードの周波数をft2、前記IDTを弾性表面波の伝搬方向に沿って挟み込むように配置される反射器におけるストップバンド下端モードの周波数をfr1、前記反射器のストップバンド上端モードの周波数をfr2として、以下の数式8の関係を満たすことを特徴とする。
本発明のある別の実施形態に係る弾性表面波フィルタは、前記反射器は、複数の導体ストリップと、前記導体ストリップの間に位置する前記水晶基板の部分にある導体ストリップ間溝と、を有し、前記電極指間溝の深さよりも前記導体ストリップ間溝の深さの方が浅いことを特徴とする。
[適用例1]オイラー角(−1.5°≦φ≦1.5°,117°≦θ≦142°,41.9°≦|ψ|≦49.5749°)の水晶基板上に設けられ、Al又はAlを主体とした合金を用いたストップバンド上端モードの弾性表面波を励振するIDTと、前記IDTを構成する電極指間に位置する基板を窪ませた電極指間溝を有する弾性表面波共振子を複数接続させたディスクリート型の弾性表面波フィルタであって、前記弾性表面波の波長をλ、前記電極指間溝の深さをGとした場合に、
このような特徴を持つ弾性表面波フィルタによれば、周波数温度特性の向上を図ることができる。
SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.
A surface acoustic wave filter according to an embodiment of the present invention has an Euler angle (−1.5 ° ≦ φ ≦ 1.5 °, 117 ° ≦ θ ≦ 142 °, 41.9 ° ≦ | ψ | ≦ 49.57). °) a quartz substrate, an IDT provided on the quartz substrate and provided with a plurality of electrode fingers, and exciting a surface acoustic wave of a stop band upper end mode, and the electrode fingers located between the electrode fingers in plan view A discrete surface acoustic wave filter having a plurality of surface acoustic wave resonators connected to each other, each having a groove between electrode fingers in a portion of a quartz substrate, wherein the wavelength of the surface acoustic wave is λ, The following formulas 1 and 2 are satisfied, where G is the depth and η is the line occupation ratio of the IDT.
A surface acoustic wave filter according to another embodiment of the present invention is characterized in that the electrode film thickness of the IDT is H and the relationship of the following Expression 4 is satisfied.
A surface acoustic wave filter according to another embodiment of the present invention includes a stop band in a reflector arranged so that the frequency of the stop band upper end mode in the IDT is ft2, and the IDT is sandwiched along the propagation direction of the surface acoustic wave. The frequency of the band lower end mode is fr1, and the frequency of the stop band upper end mode of the reflector is fr2.
In a surface acoustic wave filter according to another embodiment of the present invention, the reflector has a plurality of conductor strips and a groove between conductor strips in a portion of the quartz substrate located between the conductor strips. In addition, the depth of the groove between the conductor strips is shallower than the depth of the groove between the electrode fingers.
Application Example 1 Provided on a quartz substrate with Euler angles (−1.5 ° ≦ φ ≦ 1.5 °, 117 ° ≦ θ ≦ 142 °, 41.9 ° ≦ | ψ | ≦ 49.5749 °). An elastic surface having an IDT that excites a surface acoustic wave of a stop band upper end mode using Al or an alloy mainly composed of Al, and a groove between electrode fingers in which a substrate located between electrode fingers constituting the IDT is recessed A discrete surface acoustic wave filter in which a plurality of wave resonators are connected, where the wavelength of the surface acoustic wave is λ and the depth of the inter-electrode finger groove is G.
According to the surface acoustic wave filter having such characteristics, it is possible to improve frequency temperature characteristics.
Claims (13)
前記水晶基板上に設けられ、複数の電極指を備えるとともに、ストップバンド上端モードの弾性表面波を励振するIDTと、
平面視で、前記電極指の間に位置する前記水晶基板の部分にある電極指間溝と、
を有する弾性表面波共振子を複数接続させたディスクリート型の弾性表面波フィルタであって、
前記弾性表面波の波長をλ、前記電極指間溝の深さをG、前記IDTのライン占有率をηとして、以下の式を満たすことを特徴とする弾性表面波フィルタ。
A quartz substrate with Euler angles (−1.5 ° ≦ φ ≦ 1.5 °, 117 ° ≦ θ ≦ 142 °, 41.9 ° ≦ | ψ | ≦ 49.57 °) ;
An IDT provided on the quartz substrate , comprising a plurality of electrode fingers, and exciting a surface acoustic wave in a stop band upper end mode;
In plan view, the inter-electrode-finger groove on the portion of the quartz substrate located between the electrode fingers,
A discrete type surface acoustic wave filter in which a plurality of surface acoustic wave resonators having a plurality of surface acoustic wave resonators are connected,
Wherein the wavelength of the surface acoustic wave lambda, the depth of the inter-electrode-finger groove G, as the line occupation rate of the IDT eta, surface acoustic wave filters that satisfy the following equation.
前記電極指間溝の深さGが、
の関係を満たすことを特徴とする弾性表面波フィルタ。 The surface acoustic wave filter according to claim 1,
The depth G of the inter-electrode finger groove is
A surface acoustic wave filter characterized by satisfying the relationship:
前記IDTの電極膜厚をHとして、
の関係を満たすことを特徴とする弾性表面波フィルタ。 The surface acoustic wave filter according to claim 1 or 2,
The IDT electrode thickness set to H,
A surface acoustic wave filter characterized by satisfying the relationship:
前記ライン占有率ηが、
の関係を満たすことを特徴とする弾性表面波フィルタ。 The surface acoustic wave filter according to claim 3,
The line occupancy η is
A surface acoustic wave filter characterized by satisfying the relationship:
前記電極指間溝の深さGと前記電極膜厚Hとの和が、
の関係を満たすことを特徴とする弾性表面波フィルタ。 The surface acoustic wave filter according to claim 3 or 4,
The sum of the inter-electrode finger groove depth G and the electrode film thickness H is:
A surface acoustic wave filter characterized by satisfying the relationship:
の関係を満たすことを特徴とする弾性表面波フィルタ。 The surface acoustic wave filter according to any one of claims 1 to 5, wherein the ψ and the θ are
A surface acoustic wave filter characterized by satisfying the relationship:
前記IDTにおけるストップバンド上端モードの周波数をft2、前記IDTを弾性表面波の伝搬方向に沿って挟み込むように配置される反射器におけるストップバンド下端モードの周波数をfr1、前記反射器のストップバンド上端モードの周波数をfr2として、
の関係を満たすことを特徴とする弾性表面波フィルタ。 The surface acoustic wave filter according to any one of claims 1 to 6,
The frequency of the stop band upper end mode in the IDT is ft2, the frequency of the stop band lower end mode in the reflector arranged so as to sandwich the IDT along the propagation direction of the surface acoustic wave is fr1, and the stop band upper end mode of the reflector the frequency of the fr2,
A surface acoustic wave filter characterized by satisfying the relationship:
前記反射器は、複数の導体ストリップと、前記導体ストリップの間に位置する前記水晶基板の部分にある導体ストリップ間溝と、を有し、
前記電極指間溝の深さよりも前記導体ストリップ間溝の深さの方が浅いことを特徴とする弾性表面波フィルタ。 The surface acoustic wave filter according to any one of claims 1 to 7,
The reflector comprises a plurality of conductor strips, and a conductive strip Mamizo in portions of the quartz substrate positioned between said conductor strips,
2. The surface acoustic wave filter according to claim 1, wherein a depth of the groove between the conductor strips is shallower than a depth of the groove between the electrode fingers.
前記弾性表面波フィルタは、前記水晶基板上に複数個の前記弾性表面波共振子を梯子状に接続したラダー型弾性表面波フィルタであることを特徴とする弾性表面波フィルタ。 The surface acoustic wave filter according to any one of claims 1 to 8,
The surface acoustic wave filter is a ladder type surface acoustic wave filter in which a plurality of the surface acoustic wave resonators are connected in a ladder shape on the quartz crystal substrate.
前記弾性表面波フィルタは、前記水晶基板上に複数個の前記弾性表面波共振子を格子状に接続したラチス型弾性表面波フィルタであることを特徴とする弾性表面波フィルタ。 The surface acoustic wave filter according to any one of claims 1 to 8,
The surface acoustic wave filter is a lattice type surface acoustic wave filter in which a plurality of surface acoustic wave resonators are connected in a lattice pattern on the quartz crystal substrate.
前記弾性表面波フィルタは、前記水晶基板の弾性表面波の伝搬方向に対して複数個の前記弾性表面波共振子を平行に近接配置した横結合型多重モードフィルタであることを特徴とする弾性表面波フィルタ。 The surface acoustic wave filter according to any one of claims 1 to 8,
The surface acoustic wave filter is a laterally coupled multimode filter in which a plurality of surface acoustic wave resonators are arranged close to each other in parallel to the propagation direction of the surface acoustic wave on the quartz substrate. Wave filter.
前記弾性表面波フィルタは、前記水晶基板の弾性表面波の伝搬方向に沿って複数個のIDTからなる前記弾性表面波共振子を配置した縦結合型多重モードフィルタであることを特徴とする弾性表面波フィルタ。 The surface acoustic wave filter according to any one of claims 1 to 8,
The surface acoustic wave filter is a longitudinally coupled multimode filter in which the surface acoustic wave resonators composed of a plurality of IDTs are arranged along the propagation direction of the surface acoustic wave of the quartz substrate. Wave filter.
Priority Applications (1)
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JP2010189198A JP5737491B2 (en) | 2010-08-26 | 2010-08-26 | Surface acoustic wave filters, electronic equipment |
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JP2010189198A JP5737491B2 (en) | 2010-08-26 | 2010-08-26 | Surface acoustic wave filters, electronic equipment |
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JP2014238238A Division JP2015073305A (en) | 2014-11-25 | 2014-11-25 | Surface acoustic wave filter, electronic apparatus |
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JP2012049764A JP2012049764A (en) | 2012-03-08 |
JP2012049764A5 true JP2012049764A5 (en) | 2013-10-17 |
JP5737491B2 JP5737491B2 (en) | 2015-06-17 |
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Cited By (1)
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JP7039371B2 (en) | 2017-11-22 | 2022-03-22 | 株式会社東芝 | Laser-excited ultrasonic generator, laser ultrasonic inspection device, and laser ultrasonic inspection method |
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JPS6192011A (en) * | 1984-10-11 | 1986-05-10 | Nec Kansai Ltd | Manufacture of surface acoustic wave element |
JP3126416B2 (en) * | 1991-06-26 | 2001-01-22 | キンセキ株式会社 | Surface acoustic wave device |
JP2000216632A (en) * | 1999-01-20 | 2000-08-04 | Kubota Corp | Surface acoustic wave oscillator |
JP3897229B2 (en) * | 2001-04-27 | 2007-03-22 | 株式会社村田製作所 | Surface wave filter |
JP2006203408A (en) * | 2005-01-19 | 2006-08-03 | Epson Toyocom Corp | Surface acoustic wave device |
JP2007288812A (en) * | 2005-09-30 | 2007-11-01 | Epson Toyocom Corp | Surface acoustic wave device, module device, oscillation circuit and method for manufacturing surface acoustic wave device |
JP2007259414A (en) * | 2006-02-24 | 2007-10-04 | Seiko Epson Corp | Method for fabricating elastic surface wave equipment, method for ajusting its temperature characteristics, and elastic surface wave equipment manufactured thereby |
JP2007267033A (en) * | 2006-03-28 | 2007-10-11 | Epson Toyocom Corp | Surface acoustic wave element and surface acoustic wave device |
JP2007300287A (en) * | 2006-04-28 | 2007-11-15 | Epson Toyocom Corp | Surface acoustic wave element, surface acoustic wave device, and electronic apparatus |
JP4591800B2 (en) * | 2008-02-20 | 2010-12-01 | エプソントヨコム株式会社 | Surface acoustic wave device and surface acoustic wave oscillator |
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JP7039371B2 (en) | 2017-11-22 | 2022-03-22 | 株式会社東芝 | Laser-excited ultrasonic generator, laser ultrasonic inspection device, and laser ultrasonic inspection method |
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