JP2012049764A5 - - Google Patents
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- JP2012049764A5 JP2012049764A5 JP2010189198A JP2010189198A JP2012049764A5 JP 2012049764 A5 JP2012049764 A5 JP 2012049764A5 JP 2010189198 A JP2010189198 A JP 2010189198A JP 2010189198 A JP2010189198 A JP 2010189198A JP 2012049764 A5 JP2012049764 A5 JP 2012049764A5
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- acoustic wave
- surface acoustic
- wave filter
- filter according
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本発明は上記課題の少なくとも一部を解決するためになされたものであり、以下の形態または適用例として実現することが可能である。
本発明のある実施形態に係る弾性表面波フィルタは、オイラー角（−１．５°≦φ≦１．５°，１１７°≦θ≦１４２°，４１．９°≦｜ψ｜≦４９．５７°）の水晶基板と、前記水晶基板上に設けられ、複数の電極指を備えるとともに、ストップバンド上端モードの弾性表面波を励振するＩＤＴと、平面視で、前記電極指の間に位置する前記水晶基板の部分にある電極指間溝と、を有する弾性表面波共振子を複数接続させたディスクリート型の弾性表面波フィルタであって、前記弾性表面波の波長をλ、前記電極指間溝の深さをＧ、前記ＩＤＴのライン占有率をηとして、以下の数式１，２を満たすことを特徴とする。
本発明のある別の実施形態に係る弾性表面波フィルタは、前記ＩＤＴの電極膜厚をＨとして、以下の数式４の関係を満たすことを特徴とする。
本発明のある別の実施形態に係る弾性表面波フィルタは、前記ＩＤＴにおけるストップバンド上端モードの周波数をｆｔ２、前記ＩＤＴを弾性表面波の伝搬方向に沿って挟み込むように配置される反射器におけるストップバンド下端モードの周波数をｆｒ１、前記反射器のストップバンド上端モードの周波数をｆｒ２として、以下の数式８の関係を満たすことを特徴とする。
本発明のある別の実施形態に係る弾性表面波フィルタは、前記反射器は、複数の導体ストリップと、前記導体ストリップの間に位置する前記水晶基板の部分にある導体ストリップ間溝と、を有し、前記電極指間溝の深さよりも前記導体ストリップ間溝の深さの方が浅いことを特徴とする。
［適用例１］オイラー角（−１．５°≦φ≦１．５°，１１７°≦θ≦１４２°，４１．９°≦｜ψ｜≦４９．５７４９°）の水晶基板上に設けられ、Ａｌ又はＡｌを主体とした合金を用いたストップバンド上端モードの弾性表面波を励振するＩＤＴと、前記ＩＤＴを構成する電極指間に位置する基板を窪ませた電極指間溝を有する弾性表面波共振子を複数接続させたディスクリート型の弾性表面波フィルタであって、前記弾性表面波の波長をλ、前記電極指間溝の深さをＧとした場合に、
このような特徴を持つ弾性表面波フィルタによれば、周波数温度特性の向上を図ることができる。
SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.
A surface acoustic wave filter according to an embodiment of the present invention has an Euler angle (−1.5 ° ≦ φ ≦ 1.5 °, 117 ° ≦ θ ≦ 142 °, 41.9 ° ≦ | ψ | ≦ 49.57). °) a quartz substrate, an IDT provided on the quartz substrate and provided with a plurality of electrode fingers, and exciting a surface acoustic wave of a stop band upper end mode, and the electrode fingers located between the electrode fingers in plan view A discrete surface acoustic wave filter having a plurality of surface acoustic wave resonators connected to each other, each having a groove between electrode fingers in a portion of a quartz substrate, wherein the wavelength of the surface acoustic wave is λ, The following formulas 1 and 2 are satisfied, where G is the depth and η is the line occupation ratio of the IDT.
A surface acoustic wave filter according to another embodiment of the present invention is characterized in that the electrode film thickness of the IDT is H and the relationship of the following Expression 4 is satisfied.
A surface acoustic wave filter according to another embodiment of the present invention includes a stop band in a reflector arranged so that the frequency of the stop band upper end mode in the IDT is ft2, and the IDT is sandwiched along the propagation direction of the surface acoustic wave. The frequency of the band lower end mode is fr1, and the frequency of the stop band upper end mode of the reflector is fr2.
In a surface acoustic wave filter according to another embodiment of the present invention, the reflector has a plurality of conductor strips and a groove between conductor strips in a portion of the quartz substrate located between the conductor strips. In addition, the depth of the groove between the conductor strips is shallower than the depth of the groove between the electrode fingers.
Application Example 1 Provided on a quartz substrate with Euler angles (−1.5 ° ≦ φ ≦ 1.5 °, 117 ° ≦ θ ≦ 142 °, 41.9 ° ≦ | ψ | ≦ 49.5749 °). An elastic surface having an IDT that excites a surface acoustic wave of a stop band upper end mode using Al or an alloy mainly composed of Al, and a groove between electrode fingers in which a substrate located between electrode fingers constituting the IDT is recessed A discrete surface acoustic wave filter in which a plurality of wave resonators are connected, where the wavelength of the surface acoustic wave is λ and the depth of the inter-electrode finger groove is G.
According to the surface acoustic wave filter having such characteristics, it is possible to improve frequency temperature characteristics.
Claims (13)
前記水晶基板上に設けられ、複数の電極指を備えるとともに、ストップバンド上端モードの弾性表面波を励振するＩＤＴと、
平面視で、前記電極指の間に位置する前記水晶基板の部分にある電極指間溝と、
を有する弾性表面波共振子を複数接続させたディスクリート型の弾性表面波フィルタであって、
前記弾性表面波の波長をλ、前記電極指間溝の深さをＧ、前記ＩＤＴのライン占有率をηとして、以下の式を満たすことを特徴とする弾性表面波フィルタ。
An IDT provided on the quartz substrate , comprising a plurality of electrode fingers, and exciting a surface acoustic wave in a stop band upper end mode;
In plan view, the inter-electrode-finger groove on the portion of the quartz substrate located between the electrode fingers,
A discrete type surface acoustic wave filter in which a plurality of surface acoustic wave resonators having a plurality of surface acoustic wave resonators are connected,
Wherein the wavelength of the surface acoustic wave lambda, the depth of the inter-electrode-finger groove G, as the line occupation rate of the IDT eta, surface acoustic wave filters that satisfy the following equation.
前記電極指間溝の深さＧが、
The depth G of the inter-electrode finger groove is
前記ＩＤＴの電極膜厚をＨとして、
The IDT electrode thickness set to H,
前記ライン占有率ηが、
The line occupancy η is
前記電極指間溝の深さＧと前記電極膜厚Ｈとの和が、
The sum of the inter-electrode finger groove depth G and the electrode film thickness H is:
前記ＩＤＴにおけるストップバンド上端モードの周波数をｆｔ２、前記ＩＤＴを弾性表面波の伝搬方向に沿って挟み込むように配置される反射器におけるストップバンド下端モードの周波数をｆｒ１、前記反射器のストップバンド上端モードの周波数をｆｒ２として、
The frequency of the stop band upper end mode in the IDT is ft2, the frequency of the stop band lower end mode in the reflector arranged so as to sandwich the IDT along the propagation direction of the surface acoustic wave is fr1, and the stop band upper end mode of the reflector the frequency of the fr2,
前記反射器は、複数の導体ストリップと、前記導体ストリップの間に位置する前記水晶基板の部分にある導体ストリップ間溝と、を有し、
前記電極指間溝の深さよりも前記導体ストリップ間溝の深さの方が浅いことを特徴とする弾性表面波フィルタ。 The surface acoustic wave filter according to any one of claims 1 to 7,
The reflector comprises a plurality of conductor strips, and a conductive strip Mamizo in portions of the quartz substrate positioned between said conductor strips,
2. The surface acoustic wave filter according to claim 1, wherein a depth of the groove between the conductor strips is shallower than a depth of the groove between the electrode fingers.
前記弾性表面波フィルタは、前記水晶基板上に複数個の前記弾性表面波共振子を梯子状に接続したラダー型弾性表面波フィルタであることを特徴とする弾性表面波フィルタ。 The surface acoustic wave filter according to any one of claims 1 to 8,
The surface acoustic wave filter is a ladder type surface acoustic wave filter in which a plurality of the surface acoustic wave resonators are connected in a ladder shape on the quartz crystal substrate.
前記弾性表面波フィルタは、前記水晶基板上に複数個の前記弾性表面波共振子を格子状に接続したラチス型弾性表面波フィルタであることを特徴とする弾性表面波フィルタ。 The surface acoustic wave filter according to any one of claims 1 to 8,
The surface acoustic wave filter is a lattice type surface acoustic wave filter in which a plurality of surface acoustic wave resonators are connected in a lattice pattern on the quartz crystal substrate.
前記弾性表面波フィルタは、前記水晶基板の弾性表面波の伝搬方向に対して複数個の前記弾性表面波共振子を平行に近接配置した横結合型多重モードフィルタであることを特徴とする弾性表面波フィルタ。 The surface acoustic wave filter according to any one of claims 1 to 8,
The surface acoustic wave filter is a laterally coupled multimode filter in which a plurality of surface acoustic wave resonators are arranged close to each other in parallel to the propagation direction of the surface acoustic wave on the quartz substrate. Wave filter.
前記弾性表面波フィルタは、前記水晶基板の弾性表面波の伝搬方向に沿って複数個のＩＤＴからなる前記弾性表面波共振子を配置した縦結合型多重モードフィルタであることを特徴とする弾性表面波フィルタ。 The surface acoustic wave filter according to any one of claims 1 to 8,
The surface acoustic wave filter is a longitudinally coupled multimode filter in which the surface acoustic wave resonators composed of a plurality of IDTs are arranged along the propagation direction of the surface acoustic wave of the quartz substrate. Wave filter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010189198A JP5737491B2 (en) | 2010-08-26 | 2010-08-26 | Surface acoustic wave filters, electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010189198A JP5737491B2 (en) | 2010-08-26 | 2010-08-26 | Surface acoustic wave filters, electronic equipment |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014238238A Division JP2015073305A (en) | 2014-11-25 | 2014-11-25 | Surface acoustic wave filter, electronic apparatus |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012049764A JP2012049764A (en) | 2012-03-08 |
| JP2012049764A5 true JP2012049764A5 (en) | 2013-10-17 |
| JP5737491B2 JP5737491B2 (en) | 2015-06-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2010189198A Expired - Fee Related JP5737491B2 (en) | 2010-08-26 | 2010-08-26 | Surface acoustic wave filters, electronic equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7039371B2 (en) | 2017-11-22 | 2022-03-22 | 株式会社東芝 | Laser-excited ultrasonic generator, laser ultrasonic inspection device, and laser ultrasonic inspection method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6192011A (en) * | 1984-10-11 | 1986-05-10 | Nec Kansai Ltd | Manufacture of surface acoustic wave element |
| JP3126416B2 (en) * | 1991-06-26 | 2001-01-22 | キンセキ株式会社 | Surface acoustic wave device |
| JP2000216632A (en) * | 1999-01-20 | 2000-08-04 | Kubota Corp | Surface acoustic wave oscillator |
| JP3897229B2 (en) * | 2001-04-27 | 2007-03-22 | 株式会社村田製作所 | Surface wave filter |
| JP2006203408A (en) * | 2005-01-19 | 2006-08-03 | Epson Toyocom Corp | Surface acoustic wave device |
| JP2007288812A (en) * | 2005-09-30 | 2007-11-01 | Epson Toyocom Corp | Surface acoustic wave device, module device, oscillation circuit and method for manufacturing surface acoustic wave device |
| JP2007259414A (en) * | 2006-02-24 | 2007-10-04 | Seiko Epson Corp | Method for fabricating elastic surface wave equipment, method for ajusting its temperature characteristics, and elastic surface wave equipment manufactured thereby |
| JP2007267033A (en) * | 2006-03-28 | 2007-10-11 | Epson Toyocom Corp | Surface acoustic wave element and surface acoustic wave device |
| JP2007300287A (en) * | 2006-04-28 | 2007-11-15 | Epson Toyocom Corp | Surface acoustic wave element, surface acoustic wave device, and electronic apparatus |
| JP4591800B2 (en) * | 2008-02-20 | 2010-12-01 | エプソントヨコム株式会社 | Surface acoustic wave device and surface acoustic wave oscillator |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7039371B2 (en) | 2017-11-22 | 2022-03-22 | 株式会社東芝 | Laser-excited ultrasonic generator, laser ultrasonic inspection device, and laser ultrasonic inspection method |
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