この電極支持部材１５３の上面に、基板側リッジ電極２１ｂが載置され、複数のスライドピン１５４によって電極支持部材１５３に保持されている。基板側リッジ電極２１ｂにはスライドピン１５４を挿通させる複数のピン孔１５５が穿設されており、これらのピン孔１５５は、１箇所の円孔状の位置決めピン孔と、位置決めピン孔から熱伸方向である放射方向に延びる長孔状に形成されており、リッジ電極２１ｂは電極支持部材１５３上に相対位置を保ちながら密着するように平面度を維持して保持された状態で、熱膨張を起こしても拘束されないので、反りや歪を生じることがない。なお、またスライドピン１５４の頭が電極面内側（プラズマ生成側）へ突出しないよう、スライドピン１５４の頭が薄く曲面を持つなどの工夫がされ、桟部１５３ｂは、スライドピン１５４を固定できる範囲で幅が狭いことが好ましい。
The substrate-side ridge electrode 21 b is placed on the upper surface of the electrode support member 153, and is held on the electrode support member 153 by a plurality of slide pins 154. A plurality of pin holes 155 through which the slide pins 154 are inserted are formed in the substrate-side ridge electrode 21b. These pin holes 155 are formed into one circular hole-shaped positioning pin hole and a hot extension from the positioning pin hole. The ridge electrode 21b is formed in the shape of a long hole extending in the radial direction, and the thermal expansion of the ridge electrode 21b is maintained while maintaining the flatness so as to be in close contact with the electrode support member 153 while maintaining the relative position. Even if it is raised, it is not restrained, so there is no warping or distortion. Note also that the head of the slide pin 154 does not protrude to the electrode surface inside (plasma generation side), the head of the slide pin 154 is a contrivance such as with thin curved crosspieces 153b can fix the slide pin 1 54 The width is preferably narrow in the range.
（第２応用例）
図１０は、第１実施形態における製膜装置１の基本構造を応用し、その放電室２における基板側リッジ電極２１ｂの支持方法が異なる製膜装置２０１を示す縦断面図である。この製膜装置２０１では、プラズマ製膜処理を施す基板Ｓが排気側リッジ電極２１ａと基板側リッジ電極２１ｂとの間に挟まれるように設置され、基板側リッジ電極２１ｂの上に載置される。これにより、プラズマと基板Ｓとの距離が短くなるので、プラズマ処理の迅速化（製膜速度の向上）および安定化を図り、高品質な製膜をより高速で施すことができる。基板側リッジ電極２１ｂは、均熱温調器１１の上面１１ａと一体となるように形成することで、剛体構造化により変形がないものとしてもよい。または、基板側リッジ電極２１ｂは、図９で示した第１応用例と同様に、スライドピン１５４と長孔状に形成された複数のピン孔１５５により、熱膨張差を許容できるように保持されても良い。
(Second application example)
FIG. 10 is a longitudinal sectional view showing a film forming apparatus 201 to which the basic structure of the film forming apparatus 1 in the first embodiment is applied and the method for supporting the substrate-side ridge electrode 21b in the discharge chamber 2 is different. In this film forming apparatus 201, the substrate S on which the plasma film forming process is to be performed is installed so as to be sandwiched between the exhaust side ridge electrode 21a and the substrate side ridge electrode 21b, and is placed on the substrate side ridge electrode 21b. . Thereby, since the distance between the plasma and the substrate S is shortened, plasma processing can be accelerated (improved film formation speed) and stabilized, and high-quality film formation can be performed at higher speed. The substrate-side ridge electrode 21b may be formed so as to be integrated with the upper surface 11a of the soaking temperature controller 11 so that the substrate-side ridge electrode 21b is not deformed by the rigid structure. Or, the substrate-side ridge electrode 21b, as in the first application example shown in FIG. 9, a plurality of pin holes 1 55 that the slide pin 1 54 is formed in a long hole shape, so that it can tolerate thermal expansion difference It may be held.
また、均熱温調器１１Ａは剛性が高く変形が少ないので、両端の上部非リッジ部導波管２２ａ’，２２ｂ’を閉動作した状態では、電気的接触安定性が向上し、上部非リッジ部導波管２２ａ’，２２ｂ’内の電位分布を低減し、プラズマの均一化に好ましい。さらに、上部非リッジ部導波管２２ａ’，２２ｂ’の、均熱温調器１１Ａの表面（上面）との接触部分は、電位均一性のため、金属ウールや薄板によるシールド材を設けてプラズマ発生時には均熱温調器１１Ａとの電気的接触特性を向上させても良い。なお、基板側リッジ電極２１ｂは、剛体構造の均熱温調器１１Ａと一体の構造としても良いし、図９に示す第１応用例と同様に、スライドピン１５４と長孔状に形成された複数のピン孔１５５により、熱膨張差を許容できるように保持させても良い。
Further, the soaking temperature controller 11A has high rigidity and little deformation. Therefore, when the upper non-ridge waveguides 22a ′ and 22b ′ at both ends are closed, the electrical contact stability is improved and the upper non-ridge is improved. The potential distribution in the partial waveguides 22a ′ and 22b ′ is reduced, which is preferable for uniforming the plasma. Further, the contact portions of the upper non-ridge waveguides 22a 'and 22b' with the surface (upper surface) of the soaking temperature controller 11A are provided with a shield material made of metal wool or a thin plate for the purpose of potential uniformity. At the time of occurrence, the electrical contact characteristics with the soaking temperature controller 11A may be improved. The substrate-side ridge electrode 21b is may be used as the structure of the soaking temperature controller 11A integral with the rigid structure, similar to the first application example shown in FIG. 9, the slide pin 1 54 is formed in a long hole shape a plurality of pin holes 1 55 may be held so that it can tolerate thermal expansion difference.