JP2012020227A - 液体試料加熱気化装置 - Google Patents
液体試料加熱気化装置 Download PDFInfo
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- JP2012020227A JP2012020227A JP2010159767A JP2010159767A JP2012020227A JP 2012020227 A JP2012020227 A JP 2012020227A JP 2010159767 A JP2010159767 A JP 2010159767A JP 2010159767 A JP2010159767 A JP 2010159767A JP 2012020227 A JP2012020227 A JP 2012020227A
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- 239000007788 liquid Substances 0.000 title claims abstract description 95
- 238000010438 heat treatment Methods 0.000 title claims abstract description 55
- 239000006200 vaporizer Substances 0.000 title abstract description 6
- 230000008016 vaporization Effects 0.000 claims abstract description 57
- 238000009834 vaporization Methods 0.000 claims abstract description 51
- 238000001514 detection method Methods 0.000 claims abstract description 37
- 238000009795 derivation Methods 0.000 claims description 5
- 230000004044 response Effects 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 238000000354 decomposition reaction Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 6
- 238000005979 thermal decomposition reaction Methods 0.000 description 6
- 230000004043 responsiveness Effects 0.000 description 5
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- SEQDDYPDSLOBDC-UHFFFAOYSA-N Temazepam Chemical compound N=1C(O)C(=O)N(C)C2=CC=C(Cl)C=C2C=1C1=CC=CC=C1 SEQDDYPDSLOBDC-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J7/00—Apparatus for generating gases
- B01J7/02—Apparatus for generating gases by wet methods
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/44—Sample treatment involving radiation, e.g. heat
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01B—BOILING; BOILING APPARATUS ; EVAPORATION; EVAPORATION APPARATUS
- B01B1/00—Boiling; Boiling apparatus for physical or chemical purposes ; Evaporation in general
- B01B1/06—Preventing bumping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D1/00—Evaporating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D1/00—Evaporating
- B01D1/0011—Heating features
- B01D1/0017—Use of electrical or wave energy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D1/00—Evaporating
- B01D1/0082—Regulation; Control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D1/00—Evaporating
- B01D1/30—Accessories for evaporators ; Constructional details thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/16—Special arrangements for conducting heat from the object to the sensitive element
- G01K1/18—Special arrangements for conducting heat from the object to the sensitive element for reducing thermal inertia
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
- Control Of Resistance Heating (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
【解決手段】液体試料を貯留する気化タンク21と、気化タンク21内に設けられ、液体試料に接触して加熱する加熱部22hを有する1又は複数のヒータ22と、ヒータ22の加熱部22hを含む外表面に接触して設けられ、当該外表面の温度を検出する温度検出部と、温度検出部からの温度検出信号を受け付けて、前記ヒータ22に供給する電力を制御する制御部25とを備える。
【選択図】図1
Description
本実施形態に係る試料ガス供給システム100は、例えば半導体製造システムや太陽電池製造システムに組み込まれるものであり、図1に示すように、液体試料を加熱して気化する液体試料加熱気化装置2と、この液体試料加熱気化装置2の導出ポートP2に接続されて、気化された液体試料(以下、試料ガスという)をチャンバ等の対象機器200に供給する供給ライン3と、当該供給ライン3に設けられて、試料ガスの流量をコントロールするマスフローコントローラ(MFC)等の流量制御機器4とを備えている。本実施形態では、液体試料として、必要な蒸気圧を確保できる温度と液体試料自体が熱分解してしまう温度(分解点)とが近い試料、例えば、ジエチル亜鉛((C2H5)2Zn、DEZ)、トリメチルアルミニウム((CH3)3Al、TMA)、トリメチルガリウム((CH3)3Ga、TMGa)、トリエチルガリウム((C2H5)3Ga)、テトラキスメチルエチルアミノハフニウム(Hf[N(CH3)(C2H5)]4)、テトラキスメチルエチルアミノジルコニウム(Zr[N(CH3)(C2H5)]4、TEMAZ)等である。また、熱分解し易い試料を用いているため、流量制御機器4に組み込まれる流量センサは、熱式流量センサではなく、差圧式流量センサを用いている。
このように構成した本実施形態のガス供給システム100によれば、ヒータ温度検出部23をヒータ22の加熱面22hを含む外表面に接触して設けることにより、従来生じていた伝熱の時間差による不具合を解消することができ、液体試料の温度制御の応答性及び精度を向上させることができる。特に、必要な蒸気圧を確保できる温度とそれが熱分解する温度(分解点)とが近い場合であっても、液体試料に接触する加熱面22hを含む外表面の温度を検出しているので、液体試料の温度を分解点未満に確実に制御できるようになり、液体試料の熱分解の問題も解消することができる。
なお、本発明は前記実施形態に限られるものではない。
2 ・・・液体試料加熱気化装置
3 ・・・流量制御機構
21 ・・・気化タンク
P1 ・・・導入ポート
P2 ・・・導出ポート
22 ・・・ヒータ
22h・・・加熱面(加熱部)
23 ・・・ヒータ温度検出部
231・・・温度センサ本体
232・・・センサ保持ブロック
25 ・・・制御部
Claims (2)
- 液体試料を導入する導入ポート及び気化した液体試料を導出する導出ポートを有し、液体試料を貯留する気化タンクと、
前記気化タンク内に設けられ、液体試料に接触して加熱する加熱部を有する1又は複数のヒータと、
前記ヒータの加熱部を含む外表面に接触して設けられ、当該外表面の温度を検出するヒータ温度検出部と、
前記ヒータ温度検出部からの温度検出信号を受け付けて、前記ヒータに供給する電力を制御する制御部とを備える液体試料加熱気化装置。 - 前記ヒータが、前記気化タンクに挿入して設けられる棒状ヒータであり、
前記ヒータ温度検出部が、前記気化タンクに挿入された棒状ヒータにおいて、当該気化タンクの外側に位置する外表面に接触して設けられている請求項1記載の液体試料加熱気化装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010159767A JP5852774B2 (ja) | 2010-07-14 | 2010-07-14 | 液体試料加熱気化装置 |
EP11173535A EP2407235A1 (en) | 2010-07-14 | 2011-07-12 | Liquid sample heating vaporizer |
CN2011101959322A CN102338715A (zh) | 2010-07-14 | 2011-07-13 | 液体试样加热汽化装置 |
CN201611241356.XA CN106959241A (zh) | 2010-07-14 | 2011-07-13 | 液体试样加热汽化装置 |
KR1020110069392A KR101822658B1 (ko) | 2010-07-14 | 2011-07-13 | 액체시료 가열기화장치 |
US13/182,401 US8661919B2 (en) | 2010-07-14 | 2011-07-13 | Liquid sample heating vaporizer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010159767A JP5852774B2 (ja) | 2010-07-14 | 2010-07-14 | 液体試料加熱気化装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012020227A true JP2012020227A (ja) | 2012-02-02 |
JP5852774B2 JP5852774B2 (ja) | 2016-02-03 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010159767A Active JP5852774B2 (ja) | 2010-07-14 | 2010-07-14 | 液体試料加熱気化装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8661919B2 (ja) |
EP (1) | EP2407235A1 (ja) |
JP (1) | JP5852774B2 (ja) |
KR (1) | KR101822658B1 (ja) |
CN (2) | CN102338715A (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013235758A (ja) * | 2012-05-10 | 2013-11-21 | Sanden Corp | 加熱装置 |
JP2014007289A (ja) * | 2012-06-25 | 2014-01-16 | Tokyo Electron Ltd | ガス供給装置及び成膜装置 |
WO2019180906A1 (ja) * | 2018-03-23 | 2019-09-26 | 株式会社Kokusai Electric | 気化器、基板処理装置及び半導体装置の製造方法 |
JP2021030216A (ja) * | 2019-08-23 | 2021-03-01 | 廣化科技股▲分▼有限公司 | 純ギ酸ガス供給装置、純ギ酸ガスが供給されるはんだ付けシステム及び純ギ酸ガス供給方法 |
JP2022046879A (ja) * | 2020-09-11 | 2022-03-24 | 株式会社Kokusai Electric | 気化装置、基板処理装置、クリーニング方法、半導体装置の製造方法、およびプログラム |
US11866822B2 (en) | 2019-09-18 | 2024-01-09 | Kokusai Electric Corporation | Vaporizer, substrate processing apparatus, and method of manufacturing semiconductor device |
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US10087896B1 (en) * | 2012-10-14 | 2018-10-02 | Alberto Martin Perez | Liquefied light hydrocarbon fuel system for hybrid vehicle and methods thereto |
US9454158B2 (en) | 2013-03-15 | 2016-09-27 | Bhushan Somani | Real time diagnostics for flow controller systems and methods |
KR101480379B1 (ko) * | 2013-11-20 | 2015-01-09 | 한국표준과학연구원 | 상변화 기반의 온습도계 점검장치 및 그 제어방법과 그 점검방법 |
CN105092716A (zh) * | 2015-08-12 | 2015-11-25 | 苏州优谱德精密仪器科技有限公司 | 一种紧凑型液化石油气成分检测装置 |
KR101895684B1 (ko) | 2016-11-18 | 2018-09-07 | 현주 | 우주 쓰레기를 처리하기 위한 방법 |
US10983537B2 (en) | 2017-02-27 | 2021-04-20 | Flow Devices And Systems Inc. | Systems and methods for flow sensor back pressure adjustment for mass flow controller |
CN109163944A (zh) * | 2018-09-26 | 2019-01-08 | 苏州曼德克光电有限公司 | 一种多级加热的取样装置 |
CN109358092B (zh) * | 2018-10-23 | 2021-11-09 | 国联汽车动力电池研究院有限责任公司 | 一种软包电池的封装效果检验方法 |
CN110963534A (zh) * | 2019-11-25 | 2020-04-07 | 怀化恒安石化有限公司 | 一种用于硝酸镍产品生产过程的深度萃取除杂装置 |
JP7033622B2 (ja) | 2020-03-19 | 2022-03-10 | 株式会社Kokusai Electric | 気化装置、基板処理装置、クリーニング方法および半導体装置の製造方法 |
DE102022212052B3 (de) | 2022-11-14 | 2023-11-30 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Vorrichtung und Verfahren zum Verdampfen einer Flüssigkeit für eine elektrische Zigarette |
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- 2011-07-13 CN CN2011101959322A patent/CN102338715A/zh active Pending
- 2011-07-13 KR KR1020110069392A patent/KR101822658B1/ko active IP Right Grant
- 2011-07-13 US US13/182,401 patent/US8661919B2/en active Active
- 2011-07-13 CN CN201611241356.XA patent/CN106959241A/zh active Pending
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2013235758A (ja) * | 2012-05-10 | 2013-11-21 | Sanden Corp | 加熱装置 |
JP2014007289A (ja) * | 2012-06-25 | 2014-01-16 | Tokyo Electron Ltd | ガス供給装置及び成膜装置 |
WO2019180906A1 (ja) * | 2018-03-23 | 2019-09-26 | 株式会社Kokusai Electric | 気化器、基板処理装置及び半導体装置の製造方法 |
JPWO2019180906A1 (ja) * | 2018-03-23 | 2020-12-17 | 株式会社Kokusai Electric | 気化器、基板処理装置及び半導体装置の製造方法 |
JP2021030216A (ja) * | 2019-08-23 | 2021-03-01 | 廣化科技股▲分▼有限公司 | 純ギ酸ガス供給装置、純ギ酸ガスが供給されるはんだ付けシステム及び純ギ酸ガス供給方法 |
US11866822B2 (en) | 2019-09-18 | 2024-01-09 | Kokusai Electric Corporation | Vaporizer, substrate processing apparatus, and method of manufacturing semiconductor device |
JP2022046879A (ja) * | 2020-09-11 | 2022-03-24 | 株式会社Kokusai Electric | 気化装置、基板処理装置、クリーニング方法、半導体装置の製造方法、およびプログラム |
JP7184857B2 (ja) | 2020-09-11 | 2022-12-06 | 株式会社Kokusai Electric | 気化装置、基板処理装置、クリーニング方法、半導体装置の製造方法、プログラム、および基板処理方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101822658B1 (ko) | 2018-01-26 |
EP2407235A1 (en) | 2012-01-18 |
CN106959241A (zh) | 2017-07-18 |
KR20120007460A (ko) | 2012-01-20 |
US20120011943A1 (en) | 2012-01-19 |
CN102338715A (zh) | 2012-02-01 |
US8661919B2 (en) | 2014-03-04 |
JP5852774B2 (ja) | 2016-02-03 |
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