JP2011249263A - Transparent conductive film with good durability - Google Patents
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- JP2011249263A JP2011249263A JP2010123874A JP2010123874A JP2011249263A JP 2011249263 A JP2011249263 A JP 2011249263A JP 2010123874 A JP2010123874 A JP 2010123874A JP 2010123874 A JP2010123874 A JP 2010123874A JP 2011249263 A JP2011249263 A JP 2011249263A
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- 239000010409 thin film Substances 0.000 claims abstract description 146
- 239000010408 film Substances 0.000 claims abstract description 96
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 67
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 57
- 229920006255 plastic film Polymers 0.000 claims abstract description 29
- 239000002985 plastic film Substances 0.000 claims abstract description 29
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 24
- 229920005989 resin Polymers 0.000 claims description 18
- 239000011347 resin Substances 0.000 claims description 18
- 230000001133 acceleration Effects 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 265
- 229910044991 metal oxide Inorganic materials 0.000 description 10
- 150000004706 metal oxides Chemical class 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- -1 polyethylene terephthalate Polymers 0.000 description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 description 5
- 239000005020 polyethylene terephthalate Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- 238000010292 electrical insulation Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- HIZCTWCPHWUPFU-UHFFFAOYSA-N Glycerol tribenzoate Chemical compound C=1C=CC=CC=1C(=O)OCC(OC(=O)C=1C=CC=CC=1)COC(=O)C1=CC=CC=C1 HIZCTWCPHWUPFU-UHFFFAOYSA-N 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920006289 polycarbonate film Polymers 0.000 description 1
- 229920006290 polyethylene naphthalate film Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Abstract
Description
本発明は、タッチパネル、太陽電池、有機ＥＬ等に用いる低抵抗型透明電極として使用可能な透明導電フイルムに関し、特に耐久性に優れた透明導電フイルムに関する。 The present invention relates to a transparent conductive film that can be used as a low-resistance transparent electrode for use in touch panels, solar cells, organic EL, and the like, and particularly relates to a transparent conductive film excellent in durability.
従来、タッチパネル等の低抵抗型透明電極として使用可能な透明導電フイルムであって、透明性とペン摺動耐久性に優れた透明導電フイルムが知られている。
特許文献１には、透明基体（１）上に、透明導電性金属酸化物からなる抵抗膜層（２）、二酸化ケイ素よりなる薄膜層（３）、及び透明導電性金属酸化物からなる抵抗膜層（４）が順次形成された抵抗膜型透明タッチパネル用電極部材（透明導電フイルム）が記載されている。
また、上記透明導電性金属酸化物としては、酸化インジウム薄膜、酸化インジウムに酸化スズをドープした薄膜（ＩＴＯ薄膜）等が使用できる旨、抵抗膜層（２）と抵抗膜層（４）とは同種の透明導電性金属酸化物を使用するのが好ましい旨も記載されている。
2. Description of the Related Art Conventionally, a transparent conductive film that can be used as a low-resistance transparent electrode such as a touch panel and has excellent transparency and pen sliding durability is known.
Further, as the transparent conductive metal oxide, an indium oxide thin film, a thin film in which tin oxide is doped in indium oxide (ITO thin film), etc. can be used, and the resistive film layer (2) and the resistive film layer (4) It is also described that it is preferable to use the same kind of transparent conductive metal oxide.
さらに、上記抵抗膜層（２）、二酸化ケイ素（ＳｉＯ２）よりなる薄膜層（３）、及び抵抗膜層（４）が、透明基材上にこの順に形成されていることにより、透明性とペン摺動耐久性に優れたものとなる旨、抵抗膜層（２）と抵抗膜層（４）との間に、本来であれば電気絶縁性を有する二酸化ケイ素よりなる薄膜層（３）が存在するにもかかわらず、該二酸化ケイ素よりなる薄膜層（３）が導電性を発現するため、抵抗膜層（２）、二酸化ケイ素よりなる薄膜層（３）、及び抵抗膜層（４）全体が導電性を有する旨、さらに抵抗膜層（２）の厚さを厚くしておけばタッチパネルとして必要な電気抵抗は該層で得られるため、仮に抵抗膜層（４）が抵抗膜層（２）よりもかなり薄い厚さでもタッチパネルとしての機能は問題なく発現する旨が記載されている。 Further, the resistance film layer (2), the thin film layer (3) made of silicon dioxide (SiO 2 ), and the resistance film layer (4) are formed in this order on the transparent base material, so that transparency and Between the resistive film layer (2) and the resistive film layer (4), there is a thin film layer (3) made of silicon dioxide that has electrical insulation properties, so that the pen sliding durability is excellent. In spite of the presence, the thin film layer (3) made of silicon dioxide exhibits conductivity, so that the resistive film layer (2), the thin film layer (3) made of silicon dioxide, and the entire resistive film layer (4) If the resistance film layer (2) is made thicker, the electrical resistance necessary for the touch panel can be obtained from the layer. Therefore, the resistance film layer (4) is assumed to be the resistance film layer (2 ) Even if the thickness is much thinner than that, the function as a touch panel will appear without problems It has been mounting.
しかし、上記特許文献１記載の抵抗膜型透明タッチパネル用電極部材には、耐熱性や耐湿熱性などの耐久性に劣るという欠点があった。
具体的には、一般的に透明導電フイルムをタッチパネル用に使用する場合には、耐熱性試験（温度６０℃の環境下で３０００時間放置）、及び耐湿熱性試験（温度６０℃、湿度９５％の環境下で３０００時間放置）で、透明導電フイルムの表面抵抗率（Ω／□）が試験の前後でほとんど変化しない（変化率１０％以下である）ことが必要である。
しかし、上記特許文献１記載の抵抗膜型透明タッチパネル用電極部材は、上記試験をクリアできないという問題があった。
However, the electrode member for a resistive film type transparent touch panel described in
Specifically, when a transparent conductive film is generally used for a touch panel, a heat resistance test (stands for 3000 hours in an environment at a temperature of 60 ° C.) and a heat and humidity resistance test (at a temperature of 60 ° C. and a humidity of 95%). It is necessary that the surface resistivity (Ω / □) of the transparent conductive film hardly changes before and after the test (change rate is 10% or less) after standing in the environment for 3000 hours.
However, the electrode member for resistance film type transparent touch panel described in
本発明は、上記欠点を解決したものであり、耐久性に優れた透明導電フイルムを提供するものである。 This invention solves the said fault and provides the transparent conductive film excellent in durability.
尚、本発明においては、上記耐熱性試験、及び耐湿熱性試験に替えて、該試験の評価と同等の評価を得られる促進試験である、耐熱性促進試験（温度８０℃の環境下で５００時間放置）、及び耐湿熱性促進試験（温度８５℃、湿度８５％の環境下で５００時間放置）で耐久性を評価した。 In the present invention, in place of the heat resistance test and the moist heat resistance test, a heat resistance acceleration test (500 hours in an environment at a temperature of 80 ° C.) is an accelerated test that can obtain an evaluation equivalent to the evaluation of the test. And durability) were evaluated by a moist heat resistance acceleration test (left at 500 ° C. in an environment of temperature 85 ° C. and humidity 85%).
［１］本発明は、プラスチックフイルムの片面に、少なくとも、透明導電層（Ａ−１）、屈折率１．２〜１．５である低屈折率薄膜層（Ｂ）、及び透明導電層（Ａ−２）が順次形成されている透明導電フイルムにおいて、プラスチックフイルムと透明導電層（Ａ−１）との間にケイ素酸化物薄膜層（Ｃ）が形成されていることを特徴とする透明導電フイルムである。
［２］本発明は、ケイ素酸化物薄膜層（Ｃ）が、ＳｉＯｘ（ｘ＝１．０〜２．０）薄膜層である上記［１］記載の透明導電フイルムである。
［３］本発明は、ケイ素酸化物薄膜層（Ｃ）が、プラスチックフイルム側から、ＳｉＯｘ（ｘ＝１．０ 〜１．８）薄膜層（Ｃ−１）、及びＳｉＯ２薄膜層（Ｃ−２）が順次形成されたものである上記［１］、又は［２］記載の透明導電フイルムである。
［４］本発明は、低屈折率薄膜層（Ｂ）が、ＳｉＯ２薄膜層（Ｂ）である上記［１］〜［３］記載の透明導電フイルムである。
［５］本発明は、透明導電層（Ａ−２）の厚さが、透明導電層（Ａ−１）の厚さ以下である上記［１］〜［４］記載の透明導電フイルムである。
［６］本発明は、プラスチックフイルムとケイ素酸化物薄膜層（Ｃ）との間に樹脂からなるハードコート層が形成されている上記［１］〜［５］記載の透明導電フイルムである。
［７］本発明は、少なくとも、透明導電層（Ａ−１）、低屈折率薄膜層（Ｂ）、及び透明導電層（Ａ−２）が回路状に形成されている上記［１］〜［６］記載の透明導電フイルムである。
[1] The present invention provides at least a transparent conductive layer (A-1), a low refractive index thin film layer (B) having a refractive index of 1.2 to 1.5, and a transparent conductive layer (A) on one side of a plastic film. -2) is a transparent conductive film in which a silicon oxide thin film layer (C) is formed between the plastic film and the transparent conductive layer (A-1). It is.
[2] The transparent conductive film according to the above [1], wherein the silicon oxide thin film layer (C) is a SiOx (x = 1.0 to 2.0) thin film layer.
[3] The present invention is a silicon oxide thin film layer (C) is a plastic film side, SiOx (x = 1.0 ~1.8) thin film layer (C-1), and SiO 2 thin film layer (C- The transparent conductive film according to [1] or [2], wherein 2) is sequentially formed.
[4] The transparent conductive film according to the above [1] to [3], wherein the low refractive index thin film layer (B) is a SiO 2 thin film layer (B).
[5] The transparent conductive film according to the above [1] to [4], wherein the thickness of the transparent conductive layer (A-2) is not more than the thickness of the transparent conductive layer (A-1).
[6] The transparent conductive film according to the above [1] to [5], wherein the hard coat layer made of a resin is formed between the plastic film and the silicon oxide thin film layer (C).
[7] In the present invention, at least the transparent conductive layer (A-1), the low refractive index thin film layer (B), and the transparent conductive layer (A-2) are formed in a circuit shape. 6] The transparent conductive film described in [6].
本発明の透明導電フイルムは、プラスチックフイルムの片面に、透明導電層（Ａ−１）、低屈折率薄膜層（Ｂ）、及び透明導電層（Ａ−２）が順次形成されている透明導電フイルムにおいて、プラスチックフイルムと透明導電層（Ａ−１）との間にケイ素酸化物薄膜層（Ｃ）が形成されているので、耐熱性促進試験（温度８０℃の環境下で５００時間放置）、及び耐湿熱性促進試験（温度８５℃、湿度８５％の環境下で５００時間放置）の前後で、表面抵抗率（Ω／□）がほとんど変化せず（変化率１０％以下）耐久性に優れている。 The transparent conductive film of the present invention is a transparent conductive film in which a transparent conductive layer (A-1), a low refractive index thin film layer (B), and a transparent conductive layer (A-2) are sequentially formed on one side of a plastic film. , Since the silicon oxide thin film layer (C) is formed between the plastic film and the transparent conductive layer (A-1), a heat resistance acceleration test (left at 500 ° C. for 500 hours), and The surface resistivity (Ω / □) hardly changed before and after the moist heat resistance accelerated test (left for 500 hours in an environment of temperature 85 ° C. and humidity 85%) (change rate of 10% or less) and excellent durability. .
本発明の透明導電フイルムに使用するプラスチックフイルムはポリエチレンテレフタレートフイルム、ポリエチレンナフタレートフイルム、ポリプロピレンフイルム、アクリルフイルム、ポリカーボネートフイルム、フッ素フイルム等が使用できるが、中でも耐熱性等の点からポリエチレンテレフタレートフイルムが好ましい。 As the plastic film used in the transparent conductive film of the present invention, polyethylene terephthalate film, polyethylene naphthalate film, polypropylene film, acrylic film, polycarbonate film, fluorine film, and the like can be used. Among them, polyethylene terephthalate film is preferable from the viewpoint of heat resistance. .
プラスチックフイルムの厚さは、１０〜３００μｍが好ましく、５０〜２６０μｍがより好ましい。
厚さが、１０μｍより薄いと、特にタッチパネルに使用した場合に、指やペン等で入力する際にプラスチックフイルムの強度が十分ではないため、透明導電フイルムの変形が大きくなりすぎて透明導電層（Ａ−１）、及び透明導電層（Ａ−２）にクラックが生じ、その結果表面抵抗率が不安定となるので好ましくない。
また、透明導電フイルムがカールしてしまい、その結果、透明導電フイルムをタッチパネルに組み込むなどの後作業で、作業性が悪くなるので好ましくない。
厚さが、３００μｍより厚いと、特にタッチパネルに使用した場合に、指やペン等で入力する際、透明導電フイルムに荷重をかけて相対する透明導電フイルムに接触させるために必要以上に荷重をかけなければならない問題が生じたり、また透明導電フイルムのコストも上がるため好ましくない。
10-300 micrometers is preferable and, as for the thickness of a plastic film, 50-260 micrometers is more preferable.
When the thickness is less than 10 μm, especially when used for a touch panel, the strength of the plastic film is not sufficient when inputting with a finger or a pen, so the deformation of the transparent conductive film becomes too large and the transparent conductive layer ( A-1) and a transparent conductive layer (A-2) are not preferable because cracks are generated, resulting in unstable surface resistivity.
Further, the transparent conductive film is curled, and as a result, workability is deteriorated in the subsequent work such as incorporating the transparent conductive film into the touch panel, which is not preferable.
If the thickness is greater than 300 μm, especially when used with a touch panel, when inputting with a finger or a pen, a load is applied to the transparent conductive film so that it is in contact with the opposite transparent conductive film. This is not preferable because a necessary problem arises and the cost of the transparent conductive film increases.
本発明の透明導電フイルムに形成される透明導電層（Ａ−１）、及び透明導電層（Ａ−２）は何れも、透明な導電性金属酸化物の薄膜からなり、本発明の透明導電フイルムに導電性を付与する役割を果たすものである。
透明導電層（Ａ−１）、及び透明導電層（Ａ−２）に使用する透明な導電性金属酸化物薄膜としては、酸化インジウム薄膜、酸化スズ薄膜、酸化亜鉛薄膜、酸化カドミウム薄膜、酸化インジウムに酸化スズをドープした薄膜（ＩＴＯ薄膜）等、従来透明導電フイルムの透明導電層として使用されている導電性金属酸化物薄膜が使用できる。
中でも、導電性に優れたＩＴＯ薄膜が特に好ましい。
Each of the transparent conductive layer (A-1) and the transparent conductive layer (A-2) formed on the transparent conductive film of the present invention comprises a transparent conductive metal oxide thin film, and the transparent conductive film of the present invention. It plays the role which provides electroconductivity.
The transparent conductive metal oxide thin film used for the transparent conductive layer (A-1) and the transparent conductive layer (A-2) includes an indium oxide thin film, a tin oxide thin film, a zinc oxide thin film, a cadmium oxide thin film, and indium oxide. A conductive metal oxide thin film conventionally used as a transparent conductive layer of a transparent conductive film such as a thin film doped with tin oxide (ITO thin film) can be used.
Among these, an ITO thin film excellent in conductivity is particularly preferable.
透明導電層（Ａ−２）は、本発明の透明導電フイルムの最表層に形成され、また透明導電層（Ａ−１）は、後で詳述する低屈折率薄膜層（Ｂ）の透明導電層（Ａ−２）が形成されている側と反対面側に形成される。
従って、透明導電層（Ａ−１）、及び透明導電層（Ａ−２）の間に低屈折率薄膜層（Ｂ）が形成される。
低屈折率薄膜層（Ｂ）は、本来電気絶縁性を有するが、本発明においては透明導電層（Ａ−１）、及び透明導電層（Ａ−２）間の導電性を阻害せず電気絶縁性を有しないため、本発明の透明導電フイルムの表面抵抗率は、最表層の透明導電層（Ａ−２）自体が本来有する表面抵抗率とはならず、透明導電層（Ａ−１）、及び透明導電層（Ａ−２）の両層を合わせたあたかも単層の表面抵抗率となる。
例えば、本発明の透明導電フイルムが、プラスチックフイルム側から順に、厚さ４５ｎｍの透明導電層（Ａ−１）、厚さ５０ｎｍの低屈折率薄膜層（Ｂ）、及び厚さ１５ｎｍの透明導電層（Ａ−２）が形成されたものである場合、表面抵抗率は、厚さ１５ｎｍの透明導電層（Ａ−２）が有する表面抵抗率ではなく、厚さ４５ｎｍの透明導電層（Ａ−１）、及び厚さ１５ｎｍの透明導電層（Ａ−２）を合わせた、厚さ６０ｎｍのあたかも単層の透明導電層の表面抵抗率を有するものとなるのである。
The transparent conductive layer (A-2) is formed on the outermost layer of the transparent conductive film of the present invention, and the transparent conductive layer (A-1) is a transparent conductive layer of the low refractive index thin film layer (B) described in detail later. It is formed on the side opposite to the side on which the layer (A-2) is formed.
Therefore, a low refractive index thin film layer (B) is formed between the transparent conductive layer (A-1) and the transparent conductive layer (A-2).
The low refractive index thin film layer (B) originally has electrical insulation, but in the present invention, electrical insulation is not hindered by the conductivity between the transparent conductive layer (A-1) and the transparent conductive layer (A-2). Therefore, the surface resistivity of the transparent conductive film of the present invention is not the surface resistivity inherent in the outermost transparent conductive layer (A-2) itself, but the transparent conductive layer (A-1), And the surface resistivity of a single layer is obtained by combining both the transparent conductive layer (A-2).
For example, the transparent conductive film of the present invention comprises a transparent conductive layer (A-1) having a thickness of 45 nm, a low refractive index thin film layer (B) having a thickness of 50 nm, and a transparent conductive layer having a thickness of 15 nm in this order from the plastic film side. When (A-2) is formed, the surface resistivity is not the surface resistivity of the transparent conductive layer (A-2) having a thickness of 15 nm, but a transparent conductive layer (A-1 having a thickness of 45 nm). ) And the transparent conductive layer (A-2) having a thickness of 15 nm, the surface resistivity of the single transparent conductive layer having a thickness of 60 nm is obtained.
このように、透明導電層（Ａ−１）、及び透明導電層（Ａ−２）の間に形成された低屈折率薄膜層（Ｂ）が、透明導電層（Ａ−１）の導電性を阻害しない理由ははっきりしないが、低屈折率薄膜層（Ｂ）上に透明導電層（Ａ−２）を形成する際に、透明導電層（Ａ−２）の一部が、すなわち透明導電層（Ａ−２）を形成するための材料である透明な導電性金属酸化物の一部が、低屈折率薄膜層（Ｂ）の内部に拡散侵入すると推測することもできる。 Thus, the low-refractive-index thin film layer (B) formed between the transparent conductive layer (A-1) and the transparent conductive layer (A-2) improves the conductivity of the transparent conductive layer (A-1). Although the reason for not inhibiting is not clear, when forming the transparent conductive layer (A-2) on the low refractive index thin film layer (B), a part of the transparent conductive layer (A-2), that is, the transparent conductive layer ( It can also be assumed that a part of the transparent conductive metal oxide which is a material for forming A-2) diffuses and penetrates into the low refractive index thin film layer (B).
透明導電層（Ａ−１）は、本発明の透明導電フイルムが有する表面抵抗率の大部分を決定する役割を果たすものであり、その表面抵抗率は大よそ５〜１０００Ω／□が好ましい。
また、厚さは、上記表面抵抗率を有する程度の厚さであればよく、使用する金属酸化物薄膜層の種類にもよるが大よそ１０〜８００ｎｍが好ましい。
厚さが１０ｎｍより薄いと、所望の導電性を安定して得られないので好ましくない。
厚さが８００ｎｍより厚いと、透明導電層（Ａ−１）及び透明導電層（Ａ−２）にクラックが生じて導電性が悪くなる場合があるので好ましくない。
The transparent conductive layer (A-1) plays a role of determining most of the surface resistivity of the transparent conductive film of the present invention, and the surface resistivity is preferably about 5 to 1000 Ω / □.
Further, the thickness may be a thickness having the above surface resistivity, and is preferably about 10 to 800 nm although it depends on the type of the metal oxide thin film layer to be used.
If the thickness is less than 10 nm, the desired conductivity cannot be obtained stably, which is not preferable.
When the thickness is greater than 800 nm, the transparent conductive layer (A-1) and the transparent conductive layer (A-2) may be cracked and conductivity may be deteriorated.
透明導電層（Ａ−２）は、タッチパネルとして使用する際に指やペン等で軽く触れても、瞬時にかつ正確に、対向する電極（対向する本発明の透明導電フイルム）表面に電流を流す役割、すなわち電極の接点としての役割を果たすものである。
従って、上記役割を果たせる程度の導電性があれば足り、厚さは、使用する金属酸化物薄膜層の種類にもよるが大よそ５〜８００ｎｍが好ましい。
しかし、前記の通り、透明導電層（Ａ−１）は、本発明の透明導電フイルムが有する表面抵抗率の大部分を決定する役割を果たすものであること、さらには本発明の透明導電フイルムの表面抵抗率は、透明導電層（Ａ−１）、及び透明導電層（Ａ−２）の両層を合わせたあたかも単層の表面抵抗率となることから、透明導電層（Ａ−２）の厚さを必要以上に厚くする必要はなく、またコストも高くなることから、透明導電層（Ａ−２）の厚さは、透明導電層（Ａ−１）の厚さ以下であるのが好ましい。
透明導電層（Ａ−２）の厚のより好ましい範囲は５〜２０ｎｍである。
When the transparent conductive layer (A-2) is used as a touch panel, even if it is lightly touched with a finger or a pen, the current is instantaneously and accurately applied to the surface of the opposing electrode (the opposing transparent conductive film of the present invention). It serves as a role, that is, as a contact point of the electrode.
Therefore, it is sufficient if the conductivity is sufficient to fulfill the above role, and the thickness is preferably about 5 to 800 nm, although it depends on the type of the metal oxide thin film layer to be used.
However, as described above, the transparent conductive layer (A-1) plays a role of determining most of the surface resistivity of the transparent conductive film of the present invention, and further the transparent conductive film of the present invention. Since the surface resistivity is a single-layer surface resistivity of both the transparent conductive layer (A-1) and the transparent conductive layer (A-2), the surface resistivity of the transparent conductive layer (A-2) The thickness of the transparent conductive layer (A-2) is preferably equal to or less than the thickness of the transparent conductive layer (A-1) because it is not necessary to increase the thickness more than necessary and the cost is increased. .
A more preferable range of the thickness of the transparent conductive layer (A-2) is 5 to 20 nm.
透明導電層（Ａ−１）、及び透明導電層（Ａ−２）の厚さの比率は、透明導電フイルムの所望の表面抵抗率により適宜決定すればよい。 What is necessary is just to determine suitably the ratio of the thickness of a transparent conductive layer (A-1) and a transparent conductive layer (A-2) with the desired surface resistivity of a transparent conductive film.
本発明の透明導電フイルムに形成される低屈折率薄膜層（Ｂ）は、透明導電層（Ａ−１）、及び透明導電層（Ａ−２）の間に形成され、本発明の透明導電フイルムの透明性を向上する役割を果たすものである。
上記役割を果たすためには、屈折率が１．２〜１．５で、厚さが２０〜１００ｎｍであるのが好ましい。
低屈折率層（Ｂ）は、上記屈折率と厚さの範囲を満足する層であれば特に制限はなく、ＳｉＯ２薄膜層などの無機酸化物薄膜層、ＭｇＦ２薄膜層などの無機化合物薄膜層、フッ素系樹脂やシリコーン系樹脂などの樹脂からなる樹脂薄膜層等が使用できる。
特に、透明導電層（Ａ−１）、及び透明導電層（Ａ−２）間の導電性を阻害しない点や、耐熱性、耐湿熱性の点から、低屈折率層（Ｂ）をＳｉＯ２薄膜層（Ｂ）としておくのが好ましい。
尚、低屈折率層（Ｂ）は、前記の通り基本的に電気絶縁性を有するものであるが、上記屈折率を満足する範囲内であれば、ポリチオフェン系、ポリアセリレン系、ポリアニリン系、ポリピロール系等の導電性ポリマーや、樹脂にＩＴＯや酸化スズなどの透明導電性微粒子を混入した導電性樹脂薄膜層であっても構わない。
The low refractive index thin film layer (B) formed in the transparent conductive film of the present invention is formed between the transparent conductive layer (A-1) and the transparent conductive layer (A-2), and the transparent conductive film of the present invention. It plays a role of improving transparency.
In order to fulfill the above role, it is preferable that the refractive index is 1.2 to 1.5 and the thickness is 20 to 100 nm.
The low refractive index layer (B) is not particularly limited as long as it satisfies the above refractive index and thickness range, and is an inorganic oxide thin film layer such as a SiO 2 thin film layer, or an inorganic compound thin film layer such as a
In particular, the low refractive index layer (B) is made of an SiO 2 thin film from the viewpoint of not hindering the conductivity between the transparent conductive layer (A-1) and the transparent conductive layer (A-2), heat resistance and moist heat resistance. The layer (B) is preferably used.
The low refractive index layer (B) is basically electrically insulating as described above, but if within the range satisfying the above refractive index, polythiophene-based, polyacetylene-based, polyaniline-based, polypyrrole-based It may be a conductive polymer such as a conductive resin thin film layer in which transparent conductive fine particles such as ITO and tin oxide are mixed in a resin.
尚、低屈折率薄膜層（Ｂ）をＳｉＯ２薄膜層（Ｂ）とした場合、ＳｉＯ２薄膜層（Ｂ）は、必ずしもＳｉに対するＯの比率が厳密に１：２である必要はなく、上記屈折率を満足する範囲で、Ｓｉに対するＯの比率が多少大きくなったり小さくなったりしているものも、本発明のＳｉＯ２薄膜層（Ｂ）に含まれる。 When the low refractive index thin film layer (B) is an SiO 2 thin film layer (B), the SiO 2 thin film layer (B) is not necessarily required to have a ratio of O to Si of 1: 2 strictly. The SiO 2 thin film layer (B) of the present invention also includes those in which the ratio of O to Si is slightly increased or decreased within a range satisfying the refractive index.
本発明の透明導電フイルムに形成されるケイ素酸化物薄膜層（Ｃ）は、プラスチックフイルムと透明導電層（Ａ−１）との間に形成され、本発明の透明導電フイルムの耐久性を向上する役割を果たすものである。
尚、本発明の透明導電フイルムを特にタッチパネルに使用した場合に、指やペン等での入力を繰り返すと、透明導電層（Ａ−１）や透明導電層（Ａ−２）にクラックが発生するなどして導電性が不安定となるが、導電性の安定を目的として、本発明の透明導電フイルムのプラスチックフイルム上に、樹脂からなるハードコート層を形成してもよく、その場合には、ケイ素酸化物薄膜層（Ｃ）は該ハードコート層と透明導電層（Ａ−１）との間に形成される。
ハードコート層に使用する樹脂は、該ハードコート層が鉛筆硬度２Ｈ以上になるものが好ましく、メラミン系樹脂、紫外線硬化型アクリル系樹脂等の樹脂が使用でき、厚さは、１〜７μｍが好ましい。
The silicon oxide thin film layer (C) formed on the transparent conductive film of the present invention is formed between the plastic film and the transparent conductive layer (A-1), and improves the durability of the transparent conductive film of the present invention. It plays a role.
In addition, when the transparent conductive film of the present invention is used particularly for a touch panel, cracks occur in the transparent conductive layer (A-1) and the transparent conductive layer (A-2) when input with a finger or a pen is repeated. However, for the purpose of stabilizing the conductivity, a hard coat layer made of a resin may be formed on the plastic film of the transparent conductive film of the present invention. The silicon oxide thin film layer (C) is formed between the hard coat layer and the transparent conductive layer (A-1).
The resin used for the hard coat layer is preferably such that the hard coat layer has a pencil hardness of 2H or more, and a resin such as a melamine resin or an ultraviolet curable acrylic resin can be used, and the thickness is preferably 1 to 7 μm. .
ケイ素酸化物薄膜層（Ｃ）は、単層でもよく、２層としても構わない。
ケイ素酸化物薄膜層（Ｃ）を単層とする場合には、ＳｉＯｘ（ｘ＝１．０〜２．０）薄膜層とするのが好ましい。
ＳｉＯｘ（ｘ＝１．０〜２．０）薄膜層の厚さは、ＳｉＯｘ（ｘ＝１．０〜２．０）薄膜層が黄色に着色することを防止する点から、さらに本発明の透明導電フイルムの可視光透過率が下がり透明性が悪くなることを防止する点から５〜２００ｎｍが好ましい。
また、ケイ素酸化物薄膜層（Ｃ）を２層とする場合には、プラスチックフイルム側から、ＳｉＯｘ（ｘ＝１．０〜１．８）薄膜層（Ｃ−１）、及びＳｉＯ２薄膜層（Ｃ−２）が順次形成された構成とするのが好ましい。
ＳｉＯｘ（ｘ＝１．０〜１．８）薄膜層（Ｃ−１）、及びＳｉＯ２薄膜層（Ｃ−２）の厚さも、上記ＳｉＯｘ（ｘ＝１．０〜２．０）薄膜層と同様の点から、何れも５〜２００ｎｍが好ましい。
The silicon oxide thin film layer (C) may be a single layer or two layers.
When the silicon oxide thin film layer (C) is a single layer, it is preferably a SiOx (x = 1.0 to 2.0) thin film layer.
The thickness of the SiOx (x = 1.0 to 2.0) thin film layer is further reduced from the point of preventing the SiOx (x = 1.0 to 2.0) thin film layer from being colored yellow. 5 to 200 nm is preferable from the viewpoint that the visible light transmittance of the conductive film is lowered and the transparency is deteriorated.
When the silicon oxide thin film layer (C) has two layers, the SiOx (x = 1.0 to 1.8) thin film layer (C-1) and the SiO 2 thin film layer (from the plastic film side) It is preferable that C-2) is sequentially formed.
The thicknesses of the SiOx (x = 1.0 to 1.8) thin film layer (C-1) and the SiO 2 thin film layer (C-2) are also the same as those of the SiOx (x = 1.0 to 2.0) thin film layer. From the same point, 5 to 200 nm is preferable for all.
ここで、ＳｉＯｘ（ｘ＝１．０〜２．０）薄膜層や、ＳｉＯｘ（ｘ＝１．０〜１．８）薄膜層（Ｃ−１）は、ｘの値が上記範囲内でひとつの数字で表せる均一な薄膜層であってもよく、あるいはｘの値が上記範囲内にあるものの、該薄膜層の厚さ方向や面方向で異なった（例えば、厚さ方向や面方向でｘの値が除々に増加したり減少したりして変化している）不均一な薄膜層であってもよい。
また、ＳｉＯ２薄膜層（Ｃ−２）は、必ずしもＳｉに対するＯの比率が厳密に１：２である必要はなく、Ｓｉに対するＯの比率が多少大きくなったり小さくなったりしているものも、本発明のＳｉＯ２薄膜層（Ｃ−２）に含まれる。
Here, the SiOx (x = 1.0 to 2.0) thin film layer and the SiOx (x = 1.0 to 1.8) thin film layer (C-1) have a single x value within the above range. It may be a uniform thin film layer that can be expressed by a number, or although the value of x is in the above range, it differs depending on the thickness direction or the surface direction of the thin film layer (for example, x in the thickness direction or the surface direction). It may be a non-uniform thin film layer whose value gradually increases or decreases.
Further, the SiO 2 thin film layer (C-2) does not necessarily have a ratio of O to Si of strictly 1: 2, and the ratio of O to Si is slightly larger or smaller. It included in the SiO 2 thin-film layer of the present invention (C-2).
前記した通り、低屈折率薄膜層（Ｂ）は、透明導電層（Ａ−１）、及び透明導電層（Ａ−２）の間に形成され、本発明の透明導電フイルムの透明性を向上する役割を果たすものであるが、ケイ素酸化物薄膜層（Ｃ）の屈折率を特定の範囲としておけば、本発明の透明導電フイルムの透明性をより向上することができるので好ましい。
具体的には、ケイ素酸化物薄膜層（Ｃ）がＳｉＯｘ（ｘ＝１．０〜２．０）薄膜層単層である場合には、ＳｉＯｘ（ｘ＝１．０〜２．０）薄膜層の屈折率を１．２〜１．８の範囲にしておけば、また、ケイ素酸化物薄膜層（Ｃ）がＳｉＯｘ（ｘ＝１．０〜１．８）薄膜層（Ｃ−１）、及びＳｉＯ２薄膜層（Ｃ−２）の２層である場合には、ＳｉＯｘ（ｘ＝１．０〜１．８）薄膜層（Ｃ−１）の屈折率を１．６〜１．８の範囲に、ＳｉＯ２薄膜層（Ｃ−２）の屈折率を１．２〜１．５の範囲にしておけば、本発明の透明導電フイルムの透明性がより向上するものである。
As described above, the low refractive index thin film layer (B) is formed between the transparent conductive layer (A-1) and the transparent conductive layer (A-2), and improves the transparency of the transparent conductive film of the present invention. Although it plays a role, it is preferable to set the refractive index of the silicon oxide thin film layer (C) within a specific range because the transparency of the transparent conductive film of the present invention can be further improved.
Specifically, when the silicon oxide thin film layer (C) is a single layer of SiOx (x = 1.0 to 2.0), the SiOx (x = 1.0 to 2.0) thin film layer If the refractive index is in the range of 1.2 to 1.8, the silicon oxide thin film layer (C) is SiOx (x = 1.0 to 1.8) thin film layer (C-1), and In the case of two SiO 2 thin film layers (C-2), the refractive index of the SiO x (x = 1.0 to 1.8) thin film layer (C-1) is in the range of 1.6 to 1.8. If the refractive index of the SiO 2 thin film layer (C-2) is in the range of 1.2 to 1.5, the transparency of the transparent conductive film of the present invention is further improved.
透明導電層（Ａ−１）、低屈折率薄膜層（Ｂ）であるＳｉＯ２薄膜層（Ｂ）、透明導電層（Ａ−２）、ケイ素酸化物薄膜層（Ｃ）であるＳｉＯｘ（ｘ＝１．０〜２．０）薄膜層、ＳｉＯｘ（ｘ＝１．０〜１．８）薄膜層（Ｃ−１）、及びＳｉＯ２薄膜層（Ｃ−２）の形成方法は、従来公知の形成方法が使用でき、真空蒸着法、スパッタリング蒸着法、電子ビーム蒸着法、ＣＶＤ法等の蒸着法や、ゾル−ゲル法などのコーティング法等が使用できる。 The transparent conductive layer (A-1), the SiO 2 thin film layer (B) as the low refractive index thin film layer (B), the transparent conductive layer (A-2), and the SiOx thin film layer (C) as SiOx (x = 1.0 to 2.0) thin film layer, SiOx (x = 1.0 to 1.8) thin film layer (C-1), and SiO 2 thin film layer (C-2) are formed by conventionally known methods. A method such as a vacuum evaporation method, a sputtering evaporation method, an electron beam evaporation method, a CVD method, or a coating method such as a sol-gel method can be used.
また、本発明の透明導電フイルムをタッチパネルだけでなく、太陽電池や有機ＥＬ等の透明電極用に使用可能とするために、少なくとも、透明導電層（Ａ−１）、低屈折率薄膜層（Ｂ）、及び透明導電層（Ａ−２）を回路状に形成しておいても構わない。 In order to make the transparent conductive film of the present invention usable not only for touch panels but also for transparent electrodes such as solar cells and organic EL, at least a transparent conductive layer (A-1), a low refractive index thin film layer (B ) And the transparent conductive layer (A-2) may be formed in a circuit shape.
少なくとも、透明導電層（Ａ−１）、低屈折率薄膜層（Ｂ）、及び透明導電層（Ａ−２）を回路状に形成した本発明の透明導電フイルムを製造する方法として、例えば、プラスチックフイルムの片面に、ハードコート層、及びケイ素酸化物薄膜層（Ｃ）を順次全面に形成した後、該ケイ素酸化物薄膜層（Ｃ）上に回路を形成する部分以外の部分に水溶性樹脂層を形成し、その上から、透明導電層（Ａ−１）、低屈折率薄膜層（Ｂ）、及び透明導電層（Ａ−２）を順次全面に形成した後、水に浸漬するなどして、水溶性樹脂層と該水溶性樹脂層上の透明導電層（Ａ−１）、低屈折率薄膜層（Ｂ）、及び透明導電層（Ａ−２）を除去するとともに、水溶性樹脂層が形成されていない部分（回路状）の透明導電層（Ａ−１）、低屈折率薄膜層（Ｂ）、及び透明導電層（Ａ−２）を残存させることにより、プラスチックフイルムの片面に、ハードコート層、及びケイ素酸化物薄膜層（Ｃ）が順次全面に形成された上に、透明導電層（Ａ−１）、低屈折率薄膜層（Ｂ）、及び透明導電層（Ａ−２）が順次回路状に形成された透明導電フイルムを製造する方法が挙げられる。
あるいは、プラスチックフイルムの片面に、ハードコート層を全面に形成した後、ハードコート層上に回路を形成する部分以外の部分に水溶性樹脂層を形成し、その上から、ケイ素酸化物薄膜層（Ｃ）、透明導電層（Ａ−１）、低屈折率薄膜層（Ｂ）、及び透明導電層（Ａ−２）を順次全面に形成した後、水に浸漬するなどして、水溶性樹脂層と該水溶性樹脂層上のケイ素酸化物薄膜層（Ｃ）、透明導電層（Ａ−１）、低屈折率薄膜層（Ｂ）、及び透明導電層（Ａ−２）を除去するとともに、水溶性樹脂層が形成されていない部分（回路状）のケイ素酸化物薄膜層（Ｃ）、透明導電層（Ａ−１）、低屈折率薄膜層（Ｂ）、及び透明導電層（Ａ−２）を残存させることにより、プラスチックフイルムの片面に、ハードコート層が全面に形成された上に、ケイ素酸化物薄膜層（Ｃ）、透明導電層（Ａ−１）、低屈折率薄膜層（Ｂ）、及び透明導電層（Ａ−２）が順次回路状に形成された透明導電フイルムを製造する方法が挙げられる。
さらには、プラスチックフイルム上あるいはハードコート層上に、ケイ素酸化物薄膜層（Ｃ）、透明導電層（Ａ−１）、低屈折率薄膜層（Ｂ）、及び透明導電層（Ａ−２）を順次全面に形成した後、酸などの薬品やレーザーを使用して、少なくとも、透明導電層（Ａ−１）、低屈折率薄膜層（Ｂ）、及び透明導電層（Ａ−２）を回路状に除去（エッチング）する方法により、上記のように、少なくとも、透明導電層（Ａ−１）、低屈折率薄膜層（Ｂ）、及び透明導電層（Ａ−２）が回路状に形成された本発明の透明導電フイルムを製造することができる。
As a method for producing the transparent conductive film of the present invention in which at least the transparent conductive layer (A-1), the low refractive index thin film layer (B), and the transparent conductive layer (A-2) are formed in a circuit shape, for example, plastic A hard coat layer and a silicon oxide thin film layer (C) are sequentially formed on the entire surface of one side of the film, and then a water-soluble resin layer is formed on the silicon oxide thin film layer (C) except for a portion where a circuit is formed. The transparent conductive layer (A-1), the low refractive index thin film layer (B), and the transparent conductive layer (A-2) are sequentially formed on the entire surface, and then immersed in water. The water-soluble resin layer and the transparent conductive layer (A-1), the low refractive index thin film layer (B), and the transparent conductive layer (A-2) on the water-soluble resin layer are removed, and the water-soluble resin layer Unformed part (circuit-like) transparent conductive layer (A-1), low refractive index thin film layer (B) In addition, by leaving the transparent conductive layer (A-2), the hard coat layer and the silicon oxide thin film layer (C) are sequentially formed on one surface of the plastic film, and then the transparent conductive layer (A- 1), a method of producing a transparent conductive film in which a low refractive index thin film layer (B) and a transparent conductive layer (A-2) are sequentially formed in a circuit shape.
Alternatively, after a hard coat layer is formed on the entire surface of one side of the plastic film, a water-soluble resin layer is formed on the hard coat layer at a portion other than a portion where a circuit is formed, and a silicon oxide thin film layer ( C), a transparent conductive layer (A-1), a low refractive index thin film layer (B), and a transparent conductive layer (A-2) are sequentially formed on the entire surface, and then immersed in water to form a water-soluble resin layer. And the silicon oxide thin film layer (C), the transparent conductive layer (A-1), the low refractive index thin film layer (B), and the transparent conductive layer (A-2) on the water-soluble resin layer, Part (circuit-like) silicon oxide thin film layer (C), transparent conductive layer (A-1), low refractive index thin film layer (B), and transparent conductive layer (A-2) where the conductive resin layer is not formed Leaving a hard coat layer on one side of the plastic film. A transparent conductive film in which a silicon oxide thin film layer (C), a transparent conductive layer (A-1), a low refractive index thin film layer (B), and a transparent conductive layer (A-2) are sequentially formed in a circuit shape The method of manufacturing is mentioned.
Furthermore, a silicon oxide thin film layer (C), a transparent conductive layer (A-1), a low refractive index thin film layer (B), and a transparent conductive layer (A-2) are formed on a plastic film or a hard coat layer. After sequentially forming on the entire surface, at least the transparent conductive layer (A-1), the low refractive index thin film layer (B), and the transparent conductive layer (A-2) are formed into a circuit using chemicals such as acid and laser. As described above, at least the transparent conductive layer (A-1), the low refractive index thin film layer (B), and the transparent conductive layer (A-2) were formed in a circuit shape by the method of removing (etching) the film. The transparent conductive film of the present invention can be produced.
［実施例］
厚さ１００μｍのポリエチレンテレフタレートフイルムの片面に、ケイ素酸化物薄膜層（Ｃ）として厚さ５５ｎｍのＳｉＯｘ（ｘ＝１．７）薄膜層（Ｃ−１）、及び厚さ１０ｎｍのＳｉＯ２薄膜層（Ｃ−２）をスパッタリング蒸着法にて形成し、次に透明導電層（Ａ−１）として厚さ４５ｎｍのＩＴＯ薄膜層をスパッタリング蒸着法にて形成し、次に低屈折率薄膜層（Ｂ）として厚さ５０ｎｍのＳｉＯ２薄膜層（Ｂ）をスパッタリング蒸着法にて形成し、さらに透明導電層（Ａ−２）として厚さ１４ｎｍのＩＴＯ薄膜層をスパッタリング蒸着法にて形成し、本発明の透明導電フイルムを得た。
尚、ポリエチレンテレフタレートフイルム上に形成した各層は、全てポリエチレンテレフタレートフイルム上に全面に形成した。
[Example]
On one side of a 100 μm-thick polyethylene terephthalate film, a silicon oxide thin film layer (C) of 55 nm thick SiOx (x = 1.7) thin film layer (C-1), and a 10 nm thick SiO 2 thin film layer ( C-2) is formed by a sputtering vapor deposition method, then a 45 nm thick ITO thin film layer is formed by a sputtering vapor deposition method as a transparent conductive layer (A-1), and then a low refractive index thin film layer (B) SiO 2 thin film layer having a thickness of 50nm (B) was formed by a sputtering deposition method, was formed by further transparent conductive layer (a-2) sputtering deposition method ITO thin layer having a thickness of 14nm as a, of the present invention A transparent conductive film was obtained.
Each layer formed on the polyethylene terephthalate film was entirely formed on the polyethylene terephthalate film.
［比較例］
実施例のケイ素酸化物薄膜層（Ｃ）である、ＳｉＯｘ（ｘ＝１．７）薄膜層（Ｃ−１）、及びＳｉＯ２薄膜層（Ｃ−２）を形成しなかったこと以外は実施例と同様にして、透明導電フイルムを得た。
[Comparative example]
Example except that SiOx (x = 1.7) thin film layer (C-1) and SiO 2 thin film layer (C-2) which are silicon oxide thin film layers (C) of the examples were not formed. In the same manner, a transparent conductive film was obtained.
実施例の本発明の透明導電フイルム、及び比較例の透明導電フイルムについて以下に示す評価試験を行って性能を比較した。 For the transparent conductive film of the present invention of the example and the transparent conductive film of the comparative example, the evaluation tests shown below were performed to compare the performance.
＜耐熱性促進試験＞
（評価試料）実施例の本発明の透明導電フイルム、及び比較例の透明導電フイルムをそれぞれ、縦５０ｍｍ、横５０ｍｍに切り取ったものを１枚ずつ準備して試料とした。
（評価方法）上記各試料の表面抵抗率を、低抵抗率計（ロレスターＧＰ：三菱化学社製）を使用して、耐熱性促進試験（温度８０℃の環境下で５００時間放置）の前後で測定した。また、上記耐熱性促進試験の前の表面抵抗率と該試験後の表面抵抗率の変化率（％）［（（試験後の表面抵抗率−試験前の表面抵抗率）／試験前の表面抵抗率）×１００］についても計算した。
（評価結果）表１
<Heat resistance promotion test>
(Evaluation sample) Each of the transparent conductive film of the present invention of the example and the transparent conductive film of the comparative example cut into a length of 50 mm and a width of 50 mm was prepared and used as a sample.
(Evaluation method) The surface resistivity of each of the above samples was measured before and after the heat resistance acceleration test (left at 500 ° C. in an environment at a temperature of 80 ° C.) using a low resistivity meter (Lorestar GP: manufactured by Mitsubishi Chemical Corporation). It was measured. Further, the surface resistivity before the heat resistance acceleration test and the change rate (%) of the surface resistivity after the test [((surface resistivity after the test−surface resistivity before the test) / surface resistance before the test) Rate) × 100] was also calculated.
(Evaluation results) Table 1
＜耐湿熱性促進試験＞
（評価試料）実施例の本発明の透明導電フイルム、及び比較例の透明導電フイルムをそれぞれ、縦５０ｍｍ、横５０ｍｍに切り取ったものを１枚ずつ準備して試料とした。
（評価方法）上記各試料の表面抵抗率を、低抵抗率計（ロレスターＧＰ：三菱化学社製）を使用して、耐湿熱性促進試験（温度８５℃、湿度８５％の環境下で５００時間放置）の前後で測定した。また、上記耐湿熱性促進試験の前の表面抵抗率と該試験後の表面抵抗率の変化率（％）［（（試験後の表面抵抗率−試験前の表面抵抗率）／試験前の表面抵抗率）×１００］についても計算した。
（評価結果）表１
<Moisture and heat resistance acceleration test>
(Evaluation sample) Each of the transparent conductive film of the present invention of the example and the transparent conductive film of the comparative example cut into a length of 50 mm and a width of 50 mm was prepared and used as a sample.
(Evaluation method) The surface resistivity of each of the above samples was left for 500 hours in a moist heat resistance accelerated test (temperature 85 ° C., humidity 85%) using a low resistivity meter (Lorestar GP: manufactured by Mitsubishi Chemical Corporation). ) Before and after. Further, the surface resistivity before the moisture and heat resistance acceleration test and the change rate (%) of the surface resistivity after the test [((surface resistivity after the test−surface resistivity before the test) / surface resistance before the test) Rate) × 100] was also calculated.
(Evaluation results) Table 1
１ プラスチックフイルム
２ ケイ素酸化物薄膜層（Ｃ）
２−ａ ＳｉＯｘ（ｘ＝１．０ 〜１．８）薄膜層（Ｃ−１）
２−ｂ ＳｉＯ２薄膜層（Ｃ−２）
３ 透明導電層（Ａ−１）
４ 低屈折率薄膜層（Ｂ）
５ 透明導電層（Ａ−２）
６ ハードコート層
1
2-a SiOx (x = 1.0 to 1.8) thin film layer (C-1)
2-b SiO 2 thin film layer (C-2)
3 Transparent conductive layer (A-1)
4 Low refractive index thin film layer (B)
5 Transparent conductive layer (A-2)
6 Hard coat layer
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Cited By (2)
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| JP2015022503A (en) * | 2013-07-18 | 2015-02-02 | 株式会社翔栄 | Method of manufacturing touch panel |
| WO2015072321A1 (en) * | 2013-11-14 | 2015-05-21 | 旭硝子株式会社 | Transparent conductive laminate and touch panel |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11250756A (en) * | 1998-02-27 | 1999-09-17 | Gunze Ltd | Electrode member for resistance film type transparent touch panel and its manufacture |
| JP2004094798A (en) * | 2002-09-03 | 2004-03-25 | Gunze Ltd | Touch panel |
| JP2005028821A (en) * | 2003-07-10 | 2005-02-03 | Sony Corp | Transparent conductive base and touch panel |
| JP2010061942A (en) * | 2008-09-03 | 2010-03-18 | Toppan Printing Co Ltd | Transparent conductive and touch panel |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11250756A (en) * | 1998-02-27 | 1999-09-17 | Gunze Ltd | Electrode member for resistance film type transparent touch panel and its manufacture |
| JP2004094798A (en) * | 2002-09-03 | 2004-03-25 | Gunze Ltd | Touch panel |
| JP2005028821A (en) * | 2003-07-10 | 2005-02-03 | Sony Corp | Transparent conductive base and touch panel |
| JP2010061942A (en) * | 2008-09-03 | 2010-03-18 | Toppan Printing Co Ltd | Transparent conductive and touch panel |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015022503A (en) * | 2013-07-18 | 2015-02-02 | 株式会社翔栄 | Method of manufacturing touch panel |
| WO2015072321A1 (en) * | 2013-11-14 | 2015-05-21 | 旭硝子株式会社 | Transparent conductive laminate and touch panel |
| CN105723473A (en) * | 2013-11-14 | 2016-06-29 | 旭硝子株式会社 | Transparent conductive laminate and touch panel |
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